CN100336227C - 存储单元阵列位线的制法、存储单元阵列及其制造方法 - Google Patents

存储单元阵列位线的制法、存储单元阵列及其制造方法 Download PDF

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Publication number
CN100336227C
CN100336227C CNB028058798A CN02805879A CN100336227C CN 100336227 C CN100336227 C CN 100336227C CN B028058798 A CNB028058798 A CN B028058798A CN 02805879 A CN02805879 A CN 02805879A CN 100336227 C CN100336227 C CN 100336227C
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layer
memory cell
gate
gate region
bit line
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Expired - Fee Related
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CNB028058798A
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Chinese (zh)
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CN1502134A (zh
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R·卡科斯奇科
J·威勒
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
CNB028058798A 2001-03-02 2002-02-13 存储单元阵列位线的制法、存储单元阵列及其制造方法 Expired - Fee Related CN100336227C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10110150.3 2001-03-02
DE10110150A DE10110150A1 (de) 2001-03-02 2001-03-02 Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray

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CN1502134A CN1502134A (zh) 2004-06-02
CN100336227C true CN100336227C (zh) 2007-09-05

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US (1) US6686242B2 (enExample)
EP (1) EP1364409A2 (enExample)
JP (1) JP2004530296A (enExample)
KR (1) KR100608407B1 (enExample)
CN (1) CN100336227C (enExample)
AU (1) AU2002338242A1 (enExample)
DE (1) DE10110150A1 (enExample)
TW (1) TW540141B (enExample)
WO (1) WO2002080275A2 (enExample)

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Also Published As

Publication number Publication date
JP2004530296A (ja) 2004-09-30
US20020132430A1 (en) 2002-09-19
WO2002080275A3 (de) 2003-01-30
AU2002338242A1 (en) 2002-10-15
KR100608407B1 (ko) 2006-08-03
CN1502134A (zh) 2004-06-02
US6686242B2 (en) 2004-02-03
TW540141B (en) 2003-07-01
DE10110150A1 (de) 2002-09-19
KR20030088444A (ko) 2003-11-19
EP1364409A2 (de) 2003-11-26
WO2002080275A2 (de) 2002-10-10

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