CN1655340A - 半导体存储器件及其制造方法 - Google Patents
半导体存储器件及其制造方法 Download PDFInfo
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- CN1655340A CN1655340A CNA2004101014826A CN200410101482A CN1655340A CN 1655340 A CN1655340 A CN 1655340A CN A2004101014826 A CNA2004101014826 A CN A2004101014826A CN 200410101482 A CN200410101482 A CN 200410101482A CN 1655340 A CN1655340 A CN 1655340A
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004033297A JP4521597B2 (ja) | 2004-02-10 | 2004-02-10 | 半導体記憶装置およびその製造方法 |
JP033297/2004 | 2004-02-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1655340A true CN1655340A (zh) | 2005-08-17 |
CN100472758C CN100472758C (zh) | 2009-03-25 |
Family
ID=34824252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004101014826A Expired - Fee Related CN100472758C (zh) | 2004-02-10 | 2004-12-16 | 半导体存储器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7268042B2 (zh) |
JP (1) | JP4521597B2 (zh) |
KR (1) | KR101117857B1 (zh) |
CN (1) | CN100472758C (zh) |
TW (1) | TWI370522B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102544094A (zh) * | 2010-12-15 | 2012-07-04 | 北京大学 | 分裂栅结构的纳米线场效应晶体管 |
CN106373964A (zh) * | 2015-07-23 | 2017-02-01 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN107667431A (zh) * | 2015-06-08 | 2018-02-06 | 硅存储技术公司 | 利用5伏逻辑器件形成分离栅存储器单元的方法 |
Families Citing this family (30)
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KR100471188B1 (ko) * | 2003-01-24 | 2005-03-10 | 삼성전자주식회사 | 듀얼 게이트를 갖는 비휘발성 기억 소자 및 그 형성방법 |
JP4601316B2 (ja) * | 2004-03-31 | 2010-12-22 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
US7276433B2 (en) * | 2004-12-03 | 2007-10-02 | Micron Technology, Inc. | Methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors |
KR100646085B1 (ko) * | 2005-03-08 | 2006-11-14 | 매그나칩 반도체 유한회사 | 비휘발성 메모리 소자, 그 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
TWI282150B (en) * | 2005-08-09 | 2007-06-01 | Powerchip Semiconductor Corp | Method of fabricating a non-volatile memory |
JP4906329B2 (ja) * | 2005-12-02 | 2012-03-28 | ラピスセミコンダクタ株式会社 | 不揮発性半導体記憶装置及びその製造方法 |
US7341914B2 (en) * | 2006-03-15 | 2008-03-11 | Freescale Semiconductor, Inc. | Method for forming a non-volatile memory and a peripheral device on a semiconductor substrate |
US7700439B2 (en) * | 2006-03-15 | 2010-04-20 | Freescale Semiconductor, Inc. | Silicided nonvolatile memory and method of making same |
JP5086558B2 (ja) * | 2006-04-04 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US7524719B2 (en) | 2006-08-31 | 2009-04-28 | Freescale Semiconductor, Inc. | Method of making self-aligned split gate memory cell |
US7416945B1 (en) * | 2007-02-19 | 2008-08-26 | Freescale Semiconductor, Inc. | Method for forming a split gate memory device |
JP5357401B2 (ja) * | 2007-03-22 | 2013-12-04 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2009010281A (ja) * | 2007-06-29 | 2009-01-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7838363B2 (en) * | 2007-10-31 | 2010-11-23 | Freescale Semiconductor, Inc. | Method of forming a split gate non-volatile memory cell |
JP2010087046A (ja) * | 2008-09-29 | 2010-04-15 | Nec Electronics Corp | 不揮発性半導体装置及び不揮発性半導体装置の製造方法 |
US8470670B2 (en) * | 2009-09-23 | 2013-06-25 | Infineon Technologies Ag | Method for making semiconductor device |
KR101147523B1 (ko) * | 2010-06-15 | 2012-05-21 | 서울대학교산학협력단 | 스플릿게이트 구조를 갖는 1t 디램 소자 및 이를 이용한 디램 어레이 |
FR2985593B1 (fr) * | 2012-01-09 | 2014-02-21 | Commissariat Energie Atomique | Procede de fabrication d'une cellule memoire non volatile a double grille |
US8822289B2 (en) * | 2012-12-14 | 2014-09-02 | Spansion Llc | High voltage gate formation |
US9966477B2 (en) | 2012-12-14 | 2018-05-08 | Cypress Semiconductor Corporation | Charge trapping split gate device and method of fabricating same |
JP6026914B2 (ja) * | 2013-02-12 | 2016-11-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR102008738B1 (ko) * | 2013-03-15 | 2019-08-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9590058B2 (en) * | 2013-06-28 | 2017-03-07 | Nxp Usa, Inc. | Methods and structures for a split gate memory cell structure |
US8895397B1 (en) * | 2013-10-15 | 2014-11-25 | Globalfoundries Singapore Pte. Ltd. | Methods for forming thin film storage memory cells |
CN105206611B (zh) * | 2014-06-16 | 2018-09-07 | 中芯国际集成电路制造(上海)有限公司 | 一种Flash器件及其制备方法 |
US9397176B2 (en) * | 2014-07-30 | 2016-07-19 | Freescale Semiconductor, Inc. | Method of forming split gate memory with improved reliability |
JP2016051745A (ja) * | 2014-08-29 | 2016-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN107660112B (zh) * | 2016-07-25 | 2019-12-27 | 鹏鼎控股(深圳)股份有限公司 | 电磁屏蔽罩及其制造方法 |
US10204917B2 (en) * | 2016-12-08 | 2019-02-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for manufacturing embedded non-volatile memory |
KR20210086342A (ko) | 2019-12-31 | 2021-07-08 | 엘지디스플레이 주식회사 | 산화물 반도체 패턴을 포함하는 디스플레이 장치 |
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US5879999A (en) * | 1996-09-30 | 1999-03-09 | Motorola, Inc. | Method of manufacturing an insulated gate semiconductor device having a spacer extension |
US5969383A (en) * | 1997-06-16 | 1999-10-19 | Motorola, Inc. | Split-gate memory device and method for accessing the same |
FR2776830B1 (fr) * | 1998-03-26 | 2001-11-23 | Sgs Thomson Microelectronics | Cellule memoire electriquement programmable |
US6194272B1 (en) * | 1998-05-19 | 2001-02-27 | Mosel Vitelic, Inc. | Split gate flash cell with extremely small cell size |
US6284596B1 (en) * | 1998-12-17 | 2001-09-04 | Taiwan Semiconductor Manufacturing Company | Method of forming split-gate flash cell for salicide and self-align contact |
JP2000252462A (ja) * | 1999-03-01 | 2000-09-14 | Toshiba Corp | Mis型半導体装置及びその製造方法 |
JP3973819B2 (ja) * | 1999-03-08 | 2007-09-12 | 株式会社東芝 | 半導体記憶装置およびその製造方法 |
US6228695B1 (en) * | 1999-05-27 | 2001-05-08 | Taiwan Semiconductor Manufacturing Company | Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gate |
JP2001085544A (ja) * | 1999-09-14 | 2001-03-30 | Sanyo Electric Co Ltd | スプリットゲート型メモリセル |
US6248633B1 (en) * | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
US6479351B1 (en) * | 2000-11-30 | 2002-11-12 | Atmel Corporation | Method of fabricating a self-aligned non-volatile memory cell |
JP2002231829A (ja) | 2001-01-22 | 2002-08-16 | Halo Lsi Design & Device Technol Inc | 不揮発性半導体メモリおよびその製造方法 |
JP3452056B2 (ja) * | 2001-09-14 | 2003-09-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3840994B2 (ja) * | 2002-03-18 | 2006-11-01 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
JP4647175B2 (ja) * | 2002-04-18 | 2011-03-09 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置 |
US6599831B1 (en) * | 2002-04-30 | 2003-07-29 | Advanced Micro Devices, Inc. | Metal gate electrode using silicidation and method of formation thereof |
JP2004186452A (ja) * | 2002-12-04 | 2004-07-02 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
US7015126B2 (en) * | 2004-06-03 | 2006-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming silicided gate structure |
-
2004
- 2004-02-10 JP JP2004033297A patent/JP4521597B2/ja not_active Expired - Fee Related
- 2004-10-27 TW TW093132589A patent/TWI370522B/zh not_active IP Right Cessation
- 2004-12-07 US US11/005,015 patent/US7268042B2/en not_active Expired - Fee Related
- 2004-12-16 CN CNB2004101014826A patent/CN100472758C/zh not_active Expired - Fee Related
- 2004-12-17 KR KR1020040107830A patent/KR101117857B1/ko not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102544094A (zh) * | 2010-12-15 | 2012-07-04 | 北京大学 | 分裂栅结构的纳米线场效应晶体管 |
CN102544094B (zh) * | 2010-12-15 | 2015-06-17 | 北京大学 | 分裂栅结构的纳米线场效应晶体管 |
CN107667431A (zh) * | 2015-06-08 | 2018-02-06 | 硅存储技术公司 | 利用5伏逻辑器件形成分离栅存储器单元的方法 |
CN107667431B (zh) * | 2015-06-08 | 2019-05-28 | 硅存储技术公司 | 利用5伏逻辑器件形成分离栅存储器单元的方法 |
CN106373964A (zh) * | 2015-07-23 | 2017-02-01 | 株式会社东芝 | 半导体存储装置及其制造方法 |
CN106373964B (zh) * | 2015-07-23 | 2019-07-05 | 东芝存储器株式会社 | 半导体存储装置及其制造方法 |
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KR20050080728A (ko) | 2005-08-17 |
JP4521597B2 (ja) | 2010-08-11 |
KR101117857B1 (ko) | 2012-03-21 |
TW200527611A (en) | 2005-08-16 |
TWI370522B (en) | 2012-08-11 |
JP2005228786A (ja) | 2005-08-25 |
CN100472758C (zh) | 2009-03-25 |
US20050176202A1 (en) | 2005-08-11 |
US7268042B2 (en) | 2007-09-11 |
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