DE10110150A1 - Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray - Google Patents
Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und SpeicherzellenarrayInfo
- Publication number
- DE10110150A1 DE10110150A1 DE10110150A DE10110150A DE10110150A1 DE 10110150 A1 DE10110150 A1 DE 10110150A1 DE 10110150 A DE10110150 A DE 10110150A DE 10110150 A DE10110150 A DE 10110150A DE 10110150 A1 DE10110150 A1 DE 10110150A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- memory cell
- gate
- cell array
- bit lines
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000003491 array Methods 0.000 title description 8
- 238000002513 implantation Methods 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 125000006850 spacer group Chemical group 0.000 claims abstract description 17
- 238000003860 storage Methods 0.000 claims abstract description 15
- 238000001465 metallisation Methods 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 59
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 230000008569 process Effects 0.000 claims description 19
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000011049 filling Methods 0.000 claims description 8
- 239000007943 implant Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 64
- 150000004767 nitrides Chemical class 0.000 description 24
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010405 reoxidation reaction Methods 0.000 description 3
- 210000000352 storage cell Anatomy 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005496 tempering Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000010327 methods by industry Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10110150A DE10110150A1 (de) | 2001-03-02 | 2001-03-02 | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
| US09/917,867 US6686242B2 (en) | 2001-03-02 | 2001-07-26 | Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array |
| KR1020037011519A KR100608407B1 (ko) | 2001-03-02 | 2002-02-13 | 비트 라인 생성 방법 및 메모리 셀 어레이 생성 방법 및메모리 셀 어레이 |
| JP2002578576A JP2004530296A (ja) | 2001-03-02 | 2002-02-13 | メモリセルアレイの金属性ビット線の製造方法、メモリセルアレイの製造方法、およびメモリセルアレイ |
| EP02757712A EP1364409A2 (de) | 2001-03-02 | 2002-02-13 | Verfahren zum herstellen von metallischen bitleitungen für speicherzellenarrays, verfahren zum herstellen von speicherzellenarrays und speicherzellenarray |
| PCT/EP2002/001508 WO2002080275A2 (de) | 2001-03-02 | 2002-02-13 | Speicherzellenarrays und deren herstellungssverfahren |
| AU2002338242A AU2002338242A1 (en) | 2001-03-02 | 2002-02-13 | Memory cell arrays and method for the production thereof |
| CNB028058798A CN100336227C (zh) | 2001-03-02 | 2002-02-13 | 存储单元阵列位线的制法、存储单元阵列及其制造方法 |
| TW091103791A TW540141B (en) | 2001-03-02 | 2002-03-01 | Method for producing metallic bit lines for memory cell arrays, method for producing memory cell arrays and memory cell array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10110150A DE10110150A1 (de) | 2001-03-02 | 2001-03-02 | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE10110150A1 true DE10110150A1 (de) | 2002-09-19 |
Family
ID=7676114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE10110150A Withdrawn DE10110150A1 (de) | 2001-03-02 | 2001-03-02 | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6686242B2 (enExample) |
| EP (1) | EP1364409A2 (enExample) |
| JP (1) | JP2004530296A (enExample) |
| KR (1) | KR100608407B1 (enExample) |
| CN (1) | CN100336227C (enExample) |
| AU (1) | AU2002338242A1 (enExample) |
| DE (1) | DE10110150A1 (enExample) |
| TW (1) | TW540141B (enExample) |
| WO (1) | WO2002080275A2 (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003030253A3 (en) * | 2001-10-01 | 2003-08-28 | Advanced Micro Devices Inc | Salicided gate for virtual ground arrays |
| DE102005038939A1 (de) * | 2005-08-17 | 2007-03-01 | Infineon Technologies Ag | Halbleiterspeicherbauelement und Herstellungsverfahren |
| DE102005048197B3 (de) * | 2005-09-30 | 2007-04-26 | Infineon Technologies Ag | Halbleiterspeicherbauelement mit vergrabenen Bitleitungen und selbstjustierenden Bitleitungskontakten und dessen Herstellungsverfahren |
| WO2007047265A1 (en) * | 2005-10-21 | 2007-04-26 | Spansion Llc | Bit line implant |
| US7285499B1 (en) | 2005-05-12 | 2007-10-23 | Advanced Micro Devices, Inc. | Polymer spacers for creating sub-lithographic spaces |
| DE102006032958A1 (de) * | 2006-06-30 | 2008-01-17 | Qimonda Ag | Vergrabene Bitleitung mit reduziertem Widerstand |
| DE10392392B4 (de) * | 2002-03-14 | 2008-02-21 | Spansion LLC (n.d.Ges.d. Staates Delaware), Sunnyvale | Verfahren zur Herstellung einer integrierten Schaltung mit nichtflüchtigem Speicherbauelement ohne Bitleitungskurzschlüsse |
| US7341956B1 (en) | 2005-04-07 | 2008-03-11 | Spansion Llc | Disposable hard mask for forming bit lines |
| US7368350B2 (en) | 2005-12-20 | 2008-05-06 | Infineon Technologies Ag | Memory cell arrays and methods for producing memory cell arrays |
| DE10326771B4 (de) * | 2002-06-14 | 2010-08-19 | Qimonda Flash Gmbh | Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung |
| DE112006000208B4 (de) * | 2005-01-12 | 2014-04-03 | Spansion Llc | Speicherbauelement mit trapezförmigen Bitleitungen und Verfahren zur Herstellung desselben, und Array von Speicherelementen |
| DE102006048392B4 (de) * | 2006-09-29 | 2014-05-22 | Qimonda Ag | Verfahren zur Herstellung eines Halbleiterspeicherbauelementes |
Families Citing this family (73)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
| US6584017B2 (en) | 2001-04-05 | 2003-06-24 | Saifun Semiconductors Ltd. | Method for programming a reference cell |
| US7098107B2 (en) * | 2001-11-19 | 2006-08-29 | Saifun Semiconductor Ltd. | Protective layer in memory device and method therefor |
| US6700818B2 (en) * | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
| US20030181053A1 (en) * | 2002-03-20 | 2003-09-25 | U-Way Tseng | Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereof |
| TWI291748B (en) * | 2002-03-20 | 2007-12-21 | Macronix Int Co Ltd | Method and structure for improving reliability of non-volatile memory cell |
| US8080453B1 (en) | 2002-06-28 | 2011-12-20 | Cypress Semiconductor Corporation | Gate stack having nitride layer |
| US7256083B1 (en) * | 2002-06-28 | 2007-08-14 | Cypress Semiconductor Corporation | Nitride layer on a gate stack |
| US6917544B2 (en) * | 2002-07-10 | 2005-07-12 | Saifun Semiconductors Ltd. | Multiple use memory chip |
| KR100452037B1 (ko) * | 2002-07-18 | 2004-10-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 및 그 소자 |
| DE10239491A1 (de) * | 2002-08-28 | 2004-03-18 | Infineon Technologies Ag | Verfahren zur Herstellung vergrabener Bitleitungen in einem Halbleiterspeicher |
| US6773988B1 (en) * | 2002-09-13 | 2004-08-10 | Advanced Micro Devices, Inc. | Memory wordline spacer |
| US6815274B1 (en) * | 2002-09-13 | 2004-11-09 | Taiwan Semiconductor Manufacturing Co. | Resist protect oxide structure of sub-micron salicide process |
| US7049188B2 (en) * | 2002-11-26 | 2006-05-23 | Advanced Micro Devices, Inc. | Lateral doped channel |
| DE10258194B4 (de) * | 2002-12-12 | 2005-11-03 | Infineon Technologies Ag | Halbleiterspeicher mit Charge-trapping-Speicherzellen und Herstellungsverfahren |
| DE10258420B4 (de) * | 2002-12-13 | 2007-03-01 | Infineon Technologies Ag | Verfahren zur Herstellung einer Halbleiterspeichereinrichtung mit Charge-trapping-Speicherzellen und vergrabenen Bitleitungen |
| DE10259783A1 (de) * | 2002-12-19 | 2004-07-15 | Infineon Technologies Ag | Verfahren zur Verbesserung der Prozessschrittfolge bei der Herstellung von Halbleiterspeichern |
| US7178004B2 (en) * | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
| US7142464B2 (en) | 2003-04-29 | 2006-11-28 | Saifun Semiconductors Ltd. | Apparatus and methods for multi-level sensing in a memory array |
| DE10324052B4 (de) * | 2003-05-27 | 2007-06-28 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterspeichers mit Charge-Trapping-Speicherzellen |
| JP4818578B2 (ja) * | 2003-08-06 | 2011-11-16 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
| US7123532B2 (en) * | 2003-09-16 | 2006-10-17 | Saifun Semiconductors Ltd. | Operating array cells with matched reference cells |
| US7371637B2 (en) * | 2003-09-26 | 2008-05-13 | Cypress Semiconductor Corporation | Oxide-nitride stack gate dielectric |
| US7041545B2 (en) * | 2004-03-08 | 2006-05-09 | Infineon Technologies Ag | Method for producing semiconductor memory devices and integrated memory device |
| US6989320B2 (en) * | 2004-05-11 | 2006-01-24 | Advanced Micro Devices, Inc. | Bitline implant utilizing dual poly |
| US7317633B2 (en) | 2004-07-06 | 2008-01-08 | Saifun Semiconductors Ltd | Protection of NROM devices from charge damage |
| US7095655B2 (en) * | 2004-08-12 | 2006-08-22 | Saifun Semiconductors Ltd. | Dynamic matching of signal path and reference path for sensing |
| US20060084219A1 (en) * | 2004-10-14 | 2006-04-20 | Saifun Semiconductors, Ltd. | Advanced NROM structure and method of fabrication |
| US7638850B2 (en) * | 2004-10-14 | 2009-12-29 | Saifun Semiconductors Ltd. | Non-volatile memory structure and method of fabrication |
| US20060146624A1 (en) * | 2004-12-02 | 2006-07-06 | Saifun Semiconductors, Ltd. | Current folding sense amplifier |
| CN1838328A (zh) * | 2005-01-19 | 2006-09-27 | 赛芬半导体有限公司 | 擦除存储器阵列上存储单元的方法 |
| US7186607B2 (en) * | 2005-02-18 | 2007-03-06 | Infineon Technologies Ag | Charge-trapping memory device and method for production |
| JP4275086B2 (ja) * | 2005-02-22 | 2009-06-10 | Ｎｅｃエレクトロニクス株式会社 | 不揮発性半導体記憶装置の製造方法 |
| US7405441B2 (en) * | 2005-03-11 | 2008-07-29 | Infineon Technology Ag | Semiconductor memory |
| US8053812B2 (en) | 2005-03-17 | 2011-11-08 | Spansion Israel Ltd | Contact in planar NROM technology |
| US20060223267A1 (en) * | 2005-03-31 | 2006-10-05 | Stefan Machill | Method of production of charge-trapping memory devices |
| US7341909B2 (en) * | 2005-04-06 | 2008-03-11 | Micron Technology, Inc. | Methods of forming semiconductor constructions |
| US7208373B2 (en) * | 2005-05-27 | 2007-04-24 | Infineon Technologies Ag | Method of forming a memory cell array and a memory cell array |
| US20060281255A1 (en) * | 2005-06-14 | 2006-12-14 | Chun-Jen Chiu | Method for forming a sealed storage non-volative multiple-bit memory cell |
| EP1746645A3 (en) * | 2005-07-18 | 2009-01-21 | Saifun Semiconductors Ltd. | Memory array with sub-minimum feature size word line spacing and method of fabrication |
| US7668017B2 (en) | 2005-08-17 | 2010-02-23 | Saifun Semiconductors Ltd. | Method of erasing non-volatile memory cells |
| US20070096199A1 (en) * | 2005-09-08 | 2007-05-03 | Eli Lusky | Method of manufacturing symmetric arrays |
| US20080025084A1 (en) * | 2005-09-08 | 2008-01-31 | Rustom Irani | High aspect ration bitline oxides |
| US7221138B2 (en) | 2005-09-27 | 2007-05-22 | Saifun Semiconductors Ltd | Method and apparatus for measuring charge pump output current |
| US20070082446A1 (en) * | 2005-10-07 | 2007-04-12 | Dominik Olligs | Methods for fabricating non-volatile memory cell array |
| US20070120180A1 (en) * | 2005-11-25 | 2007-05-31 | Boaz Eitan | Transition areas for dense memory arrays |
| US7538384B2 (en) * | 2005-12-05 | 2009-05-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Non-volatile memory array structure |
| US7352627B2 (en) * | 2006-01-03 | 2008-04-01 | Saifon Semiconductors Ltd. | Method, system, and circuit for operating a non-volatile memory array |
| US7808818B2 (en) * | 2006-01-12 | 2010-10-05 | Saifun Semiconductors Ltd. | Secondary injection for NROM |
| US20070173017A1 (en) * | 2006-01-20 | 2007-07-26 | Saifun Semiconductors, Ltd. | Advanced non-volatile memory array and method of fabrication thereof |
| US7692961B2 (en) * | 2006-02-21 | 2010-04-06 | Saifun Semiconductors Ltd. | Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection |
| US8253452B2 (en) * | 2006-02-21 | 2012-08-28 | Spansion Israel Ltd | Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same |
| US7760554B2 (en) * | 2006-02-21 | 2010-07-20 | Saifun Semiconductors Ltd. | NROM non-volatile memory and mode of operation |
| US7638835B2 (en) | 2006-02-28 | 2009-12-29 | Saifun Semiconductors Ltd. | Double density NROM with nitride strips (DDNS) |
| US7811935B2 (en) * | 2006-03-07 | 2010-10-12 | Micron Technology, Inc. | Isolation regions and their formation |
| US7408222B2 (en) * | 2006-03-27 | 2008-08-05 | Infineon Technologies Ag | Charge trapping device and method of producing the charge trapping device |
| US7531867B2 (en) * | 2006-03-27 | 2009-05-12 | Infineon Technologies Ag | Method for forming an integrated memory device and memory device |
| US7701779B2 (en) * | 2006-04-27 | 2010-04-20 | Sajfun Semiconductors Ltd. | Method for programming a reference cell |
| US7790516B2 (en) * | 2006-07-10 | 2010-09-07 | Qimonda Ag | Method of manufacturing at least one semiconductor component and memory cells |
| US7608504B2 (en) * | 2006-08-30 | 2009-10-27 | Macronix International Co., Ltd. | Memory and manufacturing method thereof |
| US7605579B2 (en) * | 2006-09-18 | 2009-10-20 | Saifun Semiconductors Ltd. | Measuring and controlling current consumption and output current of charge pumps |
| US20080111182A1 (en) * | 2006-11-02 | 2008-05-15 | Rustom Irani | Forming buried contact etch stop layer (CESL) in semiconductor devices self-aligned to diffusion |
| US8252640B1 (en) | 2006-11-02 | 2012-08-28 | Kapre Ravindra M | Polycrystalline silicon activation RTA |
| US20080150011A1 (en) * | 2006-12-21 | 2008-06-26 | Spansion Llc | Integrated circuit system with memory system |
| US8536640B2 (en) | 2007-07-20 | 2013-09-17 | Cypress Semiconductor Corporation | Deuterated film encapsulation of nonvolatile charge trap memory device |
| US9018693B2 (en) | 2007-07-20 | 2015-04-28 | Cypress Semiconductor Corporation | Deuterated film encapsulation of nonvolatile charge trap memory device |
| US7691751B2 (en) * | 2007-10-26 | 2010-04-06 | Spansion Llc | Selective silicide formation using resist etchback |
| CN101587863B (zh) * | 2008-05-23 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 用于基于sonos的快闪存储的多晶硅栅极蚀刻方法和器件 |
| JP5390822B2 (ja) * | 2008-10-02 | 2014-01-15 | スパンション エルエルシー | 半導体装置及び半導体装置の製造方法 |
| KR101194872B1 (ko) * | 2010-04-19 | 2012-10-25 | 에스케이하이닉스 주식회사 | 반도체 기억 장치 |
| US8441063B2 (en) * | 2010-12-30 | 2013-05-14 | Spansion Llc | Memory with extended charge trapping layer |
| US8546226B2 (en) * | 2011-07-25 | 2013-10-01 | United Microelectronics Corp. | SONOS non-volatile memory cell and fabricating method thereof |
| US9006827B2 (en) * | 2011-11-09 | 2015-04-14 | International Business Machines Corporation | Radiation hardened memory cell and design structures |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233210A (en) * | 1990-08-15 | 1993-08-03 | Nec Corporation | Non-volatile memory and method for fabricating same |
| EP0573168A1 (en) * | 1992-06-02 | 1993-12-08 | National Semiconductor Corporation | Fast access AMG EPROM |
| US5401992A (en) * | 1992-11-25 | 1995-03-28 | Oki Electric Industry Co., Ltd. | High-density nonvolatile semiconductor memory |
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| EP1017097A1 (en) * | 1998-12-29 | 2000-07-05 | STMicroelectronics S.r.l. | Manufacturing method of salicide contacts for non-volatile memory |
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- 2001-03-02 DE DE10110150A patent/DE10110150A1/de not_active Withdrawn
- 2001-07-26 US US09/917,867 patent/US6686242B2/en not_active Expired - Lifetime
-
2002
- 2002-02-13 EP EP02757712A patent/EP1364409A2/de not_active Withdrawn
- 2002-02-13 JP JP2002578576A patent/JP2004530296A/ja active Pending
- 2002-02-13 KR KR1020037011519A patent/KR100608407B1/ko not_active Expired - Fee Related
- 2002-02-13 AU AU2002338242A patent/AU2002338242A1/en not_active Abandoned
- 2002-02-13 WO PCT/EP2002/001508 patent/WO2002080275A2/de not_active Ceased
- 2002-02-13 CN CNB028058798A patent/CN100336227C/zh not_active Expired - Fee Related
- 2002-03-01 TW TW091103791A patent/TW540141B/zh not_active IP Right Cessation
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| US5401992A (en) * | 1992-11-25 | 1995-03-28 | Oki Electric Industry Co., Ltd. | High-density nonvolatile semiconductor memory |
| US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| EP1073121A2 (en) * | 1999-07-29 | 2001-01-31 | Fujitsu Limited | Semiconductor memory device and method for manufacturing the same |
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003030253A3 (en) * | 2001-10-01 | 2003-08-28 | Advanced Micro Devices Inc | Salicided gate for virtual ground arrays |
| DE10392392B4 (de) * | 2002-03-14 | 2008-02-21 | Spansion LLC (n.d.Ges.d. Staates Delaware), Sunnyvale | Verfahren zur Herstellung einer integrierten Schaltung mit nichtflüchtigem Speicherbauelement ohne Bitleitungskurzschlüsse |
| DE10326771B4 (de) * | 2002-06-14 | 2010-08-19 | Qimonda Flash Gmbh | Integrierte Speicherschaltung und Verfahren zum Bilden einer integrierten Speicherschaltung |
| DE112006000208B4 (de) * | 2005-01-12 | 2014-04-03 | Spansion Llc | Speicherbauelement mit trapezförmigen Bitleitungen und Verfahren zur Herstellung desselben, und Array von Speicherelementen |
| US7341956B1 (en) | 2005-04-07 | 2008-03-11 | Spansion Llc | Disposable hard mask for forming bit lines |
| US7285499B1 (en) | 2005-05-12 | 2007-10-23 | Advanced Micro Devices, Inc. | Polymer spacers for creating sub-lithographic spaces |
| DE102005038939A1 (de) * | 2005-08-17 | 2007-03-01 | Infineon Technologies Ag | Halbleiterspeicherbauelement und Herstellungsverfahren |
| DE102005038939B4 (de) * | 2005-08-17 | 2015-01-08 | Qimonda Ag | Halbleiterspeicherbauelement mit oberseitig selbstjustiert angeordneten Wortleitungen und Verfahren zur Herstellung von Halbleiterspeicherbauelementen |
| DE102005048197B3 (de) * | 2005-09-30 | 2007-04-26 | Infineon Technologies Ag | Halbleiterspeicherbauelement mit vergrabenen Bitleitungen und selbstjustierenden Bitleitungskontakten und dessen Herstellungsverfahren |
| US7642158B2 (en) | 2005-09-30 | 2010-01-05 | Infineon Technologies Ag | Semiconductor memory device and method of production |
| WO2007047265A1 (en) * | 2005-10-21 | 2007-04-26 | Spansion Llc | Bit line implant |
| US7432178B2 (en) | 2005-10-21 | 2008-10-07 | Advanced Micro Devices, Inc. | Bit line implant |
| US7368350B2 (en) | 2005-12-20 | 2008-05-06 | Infineon Technologies Ag | Memory cell arrays and methods for producing memory cell arrays |
| DE102006032958B4 (de) * | 2006-06-30 | 2013-04-11 | Qimonda Ag | Speicherzellenarray mit vergrabener Bitleitung mit reduziertem Widerstand und Herstellungsverfahren hierfür |
| DE102006032958A1 (de) * | 2006-06-30 | 2008-01-17 | Qimonda Ag | Vergrabene Bitleitung mit reduziertem Widerstand |
| DE102006048392B4 (de) * | 2006-09-29 | 2014-05-22 | Qimonda Ag | Verfahren zur Herstellung eines Halbleiterspeicherbauelementes |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004530296A (ja) | 2004-09-30 |
| US20020132430A1 (en) | 2002-09-19 |
| WO2002080275A3 (de) | 2003-01-30 |
| AU2002338242A1 (en) | 2002-10-15 |
| KR100608407B1 (ko) | 2006-08-03 |
| CN1502134A (zh) | 2004-06-02 |
| US6686242B2 (en) | 2004-02-03 |
| TW540141B (en) | 2003-07-01 |
| KR20030088444A (ko) | 2003-11-19 |
| EP1364409A2 (de) | 2003-11-26 |
| CN100336227C (zh) | 2007-09-05 |
| WO2002080275A2 (de) | 2002-10-10 |
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