CN1976045A - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
- Publication number
- CN1976045A CN1976045A CNA2006101444804A CN200610144480A CN1976045A CN 1976045 A CN1976045 A CN 1976045A CN A2006101444804 A CNA2006101444804 A CN A2006101444804A CN 200610144480 A CN200610144480 A CN 200610144480A CN 1976045 A CN1976045 A CN 1976045A
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- vertical trench
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- memory cell
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Element Separation (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/164,513 | 2005-11-28 | ||
US11/164,513 US7514323B2 (en) | 2005-11-28 | 2005-11-28 | Vertical SOI trench SONOS cell |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1976045A true CN1976045A (zh) | 2007-06-06 |
CN100517732C CN100517732C (zh) | 2009-07-22 |
Family
ID=38088053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101444804A Expired - Fee Related CN100517732C (zh) | 2005-11-28 | 2006-11-08 | 半导体结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7514323B2 (zh) |
JP (1) | JP5116294B2 (zh) |
CN (1) | CN100517732C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102130135A (zh) * | 2009-12-25 | 2011-07-20 | 三洋电机株式会社 | 非易失性半导体存储装置及其制造方法 |
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JP2007149721A (ja) * | 2005-11-24 | 2007-06-14 | Nec Electronics Corp | 不揮発性半導体記憶装置及びその製造方法 |
US7859026B2 (en) * | 2006-03-16 | 2010-12-28 | Spansion Llc | Vertical semiconductor device |
US8828855B2 (en) * | 2007-04-30 | 2014-09-09 | Texas Instruments Incorporated | Transistor performance using a two-step damage anneal |
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US8643124B2 (en) | 2007-05-25 | 2014-02-04 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8614124B2 (en) * | 2007-05-25 | 2013-12-24 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US8093128B2 (en) * | 2007-05-25 | 2012-01-10 | Cypress Semiconductor Corporation | Integration of non-volatile charge trap memory devices and logic CMOS devices |
US8871595B2 (en) | 2007-05-25 | 2014-10-28 | Cypress Semiconductor Corporation | Integration of non-volatile charge trap memory devices and logic CMOS devices |
US9299568B2 (en) | 2007-05-25 | 2016-03-29 | Cypress Semiconductor Corporation | SONOS ONO stack scaling |
KR100880228B1 (ko) | 2007-10-17 | 2009-01-28 | 주식회사 동부하이텍 | Sonos 반도체 소자의 제조방법 |
US9431549B2 (en) | 2007-12-12 | 2016-08-30 | Cypress Semiconductor Corporation | Nonvolatile charge trap memory device having a high dielectric constant blocking region |
US7919387B2 (en) * | 2008-03-17 | 2011-04-05 | International Business Machines Corporation | Structure and method for manufacturing memory |
US9102522B2 (en) | 2009-04-24 | 2015-08-11 | Cypress Semiconductor Corporation | Method of ONO integration into logic CMOS flow |
US8071453B1 (en) | 2009-04-24 | 2011-12-06 | Cypress Semiconductor Corporation | Method of ONO integration into MOS flow |
JP5663278B2 (ja) * | 2010-11-19 | 2015-02-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2012174982A (ja) * | 2011-02-23 | 2012-09-10 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
CN102810631B (zh) * | 2011-05-31 | 2014-09-24 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的制造方法 |
KR101837771B1 (ko) | 2011-06-30 | 2018-03-13 | 에스케이하이닉스 주식회사 | 게이트 올 어라운드 방식의 2중 채널 형성 방법 |
JP2013055213A (ja) * | 2011-09-05 | 2013-03-21 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8685813B2 (en) | 2012-02-15 | 2014-04-01 | Cypress Semiconductor Corporation | Method of integrating a charge-trapping gate stack into a CMOS flow |
WO2013148393A1 (en) * | 2012-03-31 | 2013-10-03 | Cypress Semiconductor Corporation | Integration of non-volatile charge trap memory devices and logic cmos devices |
US8796098B1 (en) | 2013-02-26 | 2014-08-05 | Cypress Semiconductor Corporation | Embedded SONOS based memory cells |
JP2014179465A (ja) * | 2013-03-14 | 2014-09-25 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
US9018064B2 (en) * | 2013-07-10 | 2015-04-28 | Varian Semiconductor Equipment Associates, Inc. | Method of doping a polycrystalline transistor channel for vertical NAND devices |
KR102152272B1 (ko) | 2013-11-29 | 2020-09-04 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조방법 |
US8916432B1 (en) | 2014-01-21 | 2014-12-23 | Cypress Semiconductor Corporation | Methods to integrate SONOS into CMOS flow |
TWI555120B (zh) * | 2014-10-14 | 2016-10-21 | 力晶科技股份有限公司 | 半導體元件及其製作方法 |
US10113249B2 (en) * | 2014-10-23 | 2018-10-30 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate and method for manufacturing the same |
US10727244B2 (en) | 2017-06-12 | 2020-07-28 | Samsung Electronics Co., Ltd. | Semiconductor memory devices and methods of fabricating the same |
US10403634B2 (en) * | 2017-06-12 | 2019-09-03 | Samsung Electronics Co., Ltd | Semiconductor memory device and method of manufacturing the same |
JP2019102520A (ja) * | 2017-11-29 | 2019-06-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN107993976B (zh) * | 2017-12-07 | 2020-07-14 | 德淮半导体有限公司 | 半导体装置及其制造方法 |
US10177163B1 (en) | 2018-02-13 | 2019-01-08 | Globalfoundries Inc. | SOI-based floating gate memory cell |
US11049968B2 (en) * | 2018-03-07 | 2021-06-29 | X-Fab Semiconductor Foundries Gmbh | Semiconductor device and method of manufacturing a semiconductor device |
US11049932B2 (en) * | 2018-12-20 | 2021-06-29 | Globalfoundries U.S. Inc. | Semiconductor isolation structures comprising shallow trench and deep trench isolation |
CN112447582B (zh) * | 2019-08-29 | 2022-06-10 | 长鑫存储技术有限公司 | 在衬底中形成沟槽隔离结构的方法 |
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US5387534A (en) * | 1994-05-05 | 1995-02-07 | Micron Semiconductor, Inc. | Method of forming an array of non-volatile sonos memory cells and array of non-violatile sonos memory cells |
US6121661A (en) * | 1996-12-11 | 2000-09-19 | International Business Machines Corporation | Silicon-on-insulator structure for electrostatic discharge protection and improved heat dissipation |
EP0899790A3 (de) * | 1997-08-27 | 2006-02-08 | Infineon Technologies AG | DRAM-Zellanordnung und Verfahren zu deren Herstellung |
DE10041749A1 (de) * | 2000-08-27 | 2002-03-14 | Infineon Technologies Ag | Vertikale nichtflüchtige Halbleiter-Speicherzelle sowie Verfahren zu deren Herstellung |
US6777737B2 (en) * | 2001-10-30 | 2004-08-17 | International Business Machines Corporation | Vertical DRAM punchthrough stop self-aligned to storage trench |
JP2003332469A (ja) * | 2002-05-10 | 2003-11-21 | Fujitsu Ltd | 不揮発性半導体記憶装置及びその製造方法 |
US6787419B2 (en) * | 2003-01-14 | 2004-09-07 | Ememory Technology Inc. | Method of forming an embedded memory including forming three silicon or polysilicon layers |
US7009237B2 (en) * | 2004-05-06 | 2006-03-07 | International Business Machines Corporation | Out of the box vertical transistor for eDRAM on SOI |
US7816728B2 (en) * | 2005-04-12 | 2010-10-19 | International Business Machines Corporation | Structure and method of fabricating high-density trench-based non-volatile random access SONOS memory cells for SOC applications |
US20070045697A1 (en) * | 2005-08-31 | 2007-03-01 | International Business Machines Corporation | Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures |
US7294543B2 (en) * | 2006-03-22 | 2007-11-13 | International Business Machines Corporation | DRAM (Dynamic Random Access Memory) cells |
-
2005
- 2005-11-28 US US11/164,513 patent/US7514323B2/en active Active
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2006
- 2006-11-08 CN CNB2006101444804A patent/CN100517732C/zh not_active Expired - Fee Related
- 2006-11-24 JP JP2006317746A patent/JP5116294B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-25 US US12/410,935 patent/US8008713B2/en not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130135A (zh) * | 2009-12-25 | 2011-07-20 | 三洋电机株式会社 | 非易失性半导体存储装置及其制造方法 |
CN102130135B (zh) * | 2009-12-25 | 2013-08-07 | 三洋电机株式会社 | 非易失性半导体存储装置及其制造方法 |
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JP5116294B2 (ja) | 2013-01-09 |
US20070122971A1 (en) | 2007-05-31 |
CN100517732C (zh) | 2009-07-22 |
US20090224308A1 (en) | 2009-09-10 |
US8008713B2 (en) | 2011-08-30 |
US7514323B2 (en) | 2009-04-07 |
JP2007150317A (ja) | 2007-06-14 |
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