CN1685524A - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN1685524A CN1685524A CN03823026.7A CN03823026A CN1685524A CN 1685524 A CN1685524 A CN 1685524A CN 03823026 A CN03823026 A CN 03823026A CN 1685524 A CN1685524 A CN 1685524A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000007667 floating Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 70
- 229910052710 silicon Inorganic materials 0.000 claims description 70
- 239000010703 silicon Substances 0.000 claims description 70
- 238000005530 etching Methods 0.000 claims description 43
- 210000003323 beak Anatomy 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 22
- 238000000465 moulding Methods 0.000 claims description 16
- 238000003475 lamination Methods 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 5
- 230000005669 field effect Effects 0.000 abstract description 6
- 241000293849 Cordylanthus Species 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 78
- 230000003647 oxidation Effects 0.000 description 29
- 238000007254 oxidation reaction Methods 0.000 description 29
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- -1 phosphonium ion Chemical class 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells
- H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
- H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/003382 WO2004084314A1 (ja) | 2003-03-19 | 2003-03-19 | 半導体装置とその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1685524A true CN1685524A (zh) | 2005-10-19 |
CN100429790C CN100429790C (zh) | 2008-10-29 |
Family
ID=33018162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038230267A Expired - Fee Related CN100429790C (zh) | 2003-03-19 | 2003-03-19 | 半导体器件及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (3) | US20050224864A1 (zh) |
JP (1) | JP4721710B2 (zh) |
CN (1) | CN100429790C (zh) |
TW (1) | TWI223898B (zh) |
WO (1) | WO2004084314A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105448842A (zh) * | 2014-08-29 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN107978606A (zh) * | 2017-11-20 | 2018-05-01 | 上海华力微电子有限公司 | 一种嵌入式闪存工艺集成方法 |
CN108461395A (zh) * | 2013-01-25 | 2018-08-28 | 瑞萨电子株式会社 | 制造半导体器件的方法 |
CN110634735A (zh) * | 2019-09-26 | 2019-12-31 | 上海华力集成电路制造有限公司 | 双重栅极氧化层生长方法及半导体器件的制造方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100575333B1 (ko) * | 2003-12-15 | 2006-05-02 | 에스티마이크로일렉트로닉스 엔.브이. | 플래쉬 메모리소자의 제조방법 |
KR100673206B1 (ko) * | 2004-12-28 | 2007-01-22 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 제조 방법 |
KR100632640B1 (ko) * | 2005-03-10 | 2006-10-12 | 주식회사 하이닉스반도체 | 플래쉬 메모리 소자의 제조방법 |
JP4975622B2 (ja) * | 2005-04-15 | 2012-07-11 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
US7238569B2 (en) * | 2005-04-25 | 2007-07-03 | Spansion Llc | Formation method of an array source line in NAND flash memory |
JP4316540B2 (ja) | 2005-06-24 | 2009-08-19 | 株式会社東芝 | 不揮発性半導体記憶装置及び不揮発性半導体記憶装置の製造方法 |
JP5013050B2 (ja) * | 2006-06-14 | 2012-08-29 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7898016B2 (en) | 2006-11-30 | 2011-03-01 | Seiko Epson Corporation | CMOS semiconductor non-volatile memory device |
EP2340561B1 (en) * | 2008-10-23 | 2012-12-12 | Nxp B.V. | Multi-transistor memory cell |
JP2013211448A (ja) * | 2012-03-30 | 2013-10-10 | Asahi Kasei Electronics Co Ltd | 半導体装置及びその製造方法 |
US9111863B2 (en) * | 2012-12-03 | 2015-08-18 | Institute of Microelectronics, Chinese Academy of Sciences | Method for manufacturing dummy gate in gate-last process and dummy gate in gate-last process |
CN103854984B (zh) * | 2012-12-03 | 2017-03-01 | 中国科学院微电子研究所 | 一种后栅工艺假栅的制造方法和后栅工艺假栅 |
US9966477B2 (en) * | 2012-12-14 | 2018-05-08 | Cypress Semiconductor Corporation | Charge trapping split gate device and method of fabricating same |
JP2014204041A (ja) * | 2013-04-08 | 2014-10-27 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
CN104425366B (zh) * | 2013-08-20 | 2017-12-29 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构的形成方法 |
JP2015118972A (ja) * | 2013-12-17 | 2015-06-25 | シナプティクス・ディスプレイ・デバイス合同会社 | 半導体装置の製造方法 |
TWI538024B (zh) * | 2014-01-09 | 2016-06-11 | 旺宏電子股份有限公司 | 半導體元件及其製造方法 |
US9966382B2 (en) * | 2016-08-16 | 2018-05-08 | United Microelectronics Corp. | Semiconductor structure and method for fabricating the same |
US10115625B2 (en) * | 2016-12-30 | 2018-10-30 | Globalfoundries Singapore Pte. Ltd. | Methods for removal of hard mask |
DE102017125541B4 (de) * | 2017-06-30 | 2020-02-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung mit Speicherzellenbereich und Schaltungsbereichen sowie Verfahren zu deren Herstellung |
Family Cites Families (27)
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JPS56120166A (en) * | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
US4635347A (en) * | 1985-03-29 | 1987-01-13 | Advanced Micro Devices, Inc. | Method of fabricating titanium silicide gate electrodes and interconnections |
US4775642A (en) * | 1987-02-02 | 1988-10-04 | Motorola, Inc. | Modified source/drain implants in a double-poly non-volatile memory process |
JPH03214777A (ja) * | 1990-01-19 | 1991-09-19 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
JP3397804B2 (ja) * | 1992-06-09 | 2003-04-21 | シチズン時計株式会社 | 不揮発性メモリの製造方法 |
KR0161402B1 (ko) * | 1995-03-22 | 1998-12-01 | 김광호 | 불휘발성 메모리 제조방법 |
US5789776A (en) | 1995-09-22 | 1998-08-04 | Nvx Corporation | Single poly memory cell and array |
JPH10154802A (ja) * | 1996-11-22 | 1998-06-09 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
JPH10223782A (ja) | 1997-02-06 | 1998-08-21 | Toshiba Corp | 不揮発性半導体記憶装置およびその製造方法 |
KR100234414B1 (ko) * | 1997-03-05 | 1999-12-15 | 윤종용 | 불휘발성 메모리장치 및 그 제조방법 |
JPH1154637A (ja) * | 1997-08-06 | 1999-02-26 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
JP4326606B2 (ja) * | 1998-03-26 | 2009-09-09 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
JP2002520807A (ja) * | 1998-05-04 | 2002-07-09 | サイプレス セミコンダクター コーポレイション | 単一ポリメモリーセルとアレー |
JP3895069B2 (ja) * | 1999-02-22 | 2007-03-22 | 株式会社東芝 | 半導体装置とその製造方法 |
JP4212178B2 (ja) * | 1999-03-12 | 2009-01-21 | 株式会社東芝 | 半導体集積回路の製造方法 |
EP1039533A3 (en) * | 1999-03-22 | 2001-04-04 | Infineon Technologies North America Corp. | High performance dram and method of manufacture |
JP2000340773A (ja) * | 1999-05-26 | 2000-12-08 | Denso Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP4181284B2 (ja) * | 1999-10-14 | 2008-11-12 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6294430B1 (en) * | 2000-01-31 | 2001-09-25 | Advanced Micro Devices, Inc. | Nitridization of the pre-ddi screen oxide |
JP2002064157A (ja) * | 2000-06-09 | 2002-02-28 | Toshiba Corp | 半導体メモリ集積回路及びその製造方法 |
TW461093B (en) * | 2000-07-07 | 2001-10-21 | United Microelectronics Corp | Fabrication method for a high voltage electrical erasable programmable read only memory device |
JP4346228B2 (ja) * | 2000-09-21 | 2009-10-21 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
TW466755B (en) * | 2000-12-08 | 2001-12-01 | Macronix Int Co Ltd | Manufacturing method of flash memory |
JP3916419B2 (ja) * | 2001-07-02 | 2007-05-16 | 松下電器産業株式会社 | 半導体記憶装置の製造方法 |
JP2003023114A (ja) * | 2001-07-05 | 2003-01-24 | Fujitsu Ltd | 半導体集積回路装置およびその製造方法 |
JP2003031705A (ja) * | 2001-07-19 | 2003-01-31 | Toshiba Corp | 半導体装置、半導体装置の製造方法 |
JP2003068889A (ja) * | 2001-08-23 | 2003-03-07 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置の製造方法 |
-
2003
- 2003-03-19 WO PCT/JP2003/003382 patent/WO2004084314A1/ja active Application Filing
- 2003-03-19 JP JP2004569583A patent/JP4721710B2/ja not_active Expired - Lifetime
- 2003-03-19 CN CNB038230267A patent/CN100429790C/zh not_active Expired - Fee Related
- 2003-04-17 TW TW092108946A patent/TWI223898B/zh not_active IP Right Cessation
-
2005
- 2005-06-06 US US11/145,214 patent/US20050224864A1/en not_active Abandoned
-
2009
- 2009-12-17 US US12/640,067 patent/US20100096684A1/en not_active Abandoned
-
2011
- 2011-02-14 US US13/026,736 patent/US8304310B2/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108461395A (zh) * | 2013-01-25 | 2018-08-28 | 瑞萨电子株式会社 | 制造半导体器件的方法 |
CN105448842A (zh) * | 2014-08-29 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN105448842B (zh) * | 2014-08-29 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
CN107978606A (zh) * | 2017-11-20 | 2018-05-01 | 上海华力微电子有限公司 | 一种嵌入式闪存工艺集成方法 |
CN110634735A (zh) * | 2019-09-26 | 2019-12-31 | 上海华力集成电路制造有限公司 | 双重栅极氧化层生长方法及半导体器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2004084314A1 (ja) | 2006-06-29 |
WO2004084314A1 (ja) | 2004-09-30 |
US20110136312A1 (en) | 2011-06-09 |
JP4721710B2 (ja) | 2011-07-13 |
US8304310B2 (en) | 2012-11-06 |
US20050224864A1 (en) | 2005-10-13 |
CN100429790C (zh) | 2008-10-29 |
TW200419813A (en) | 2004-10-01 |
TWI223898B (en) | 2004-11-11 |
US20100096684A1 (en) | 2010-04-22 |
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