CN1741273A - 双浅沟绝缘半导体装置及其制造方法 - Google Patents
双浅沟绝缘半导体装置及其制造方法 Download PDFInfo
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- CN1741273A CN1741273A CN 200510091477 CN200510091477A CN1741273A CN 1741273 A CN1741273 A CN 1741273A CN 200510091477 CN200510091477 CN 200510091477 CN 200510091477 A CN200510091477 A CN 200510091477A CN 1741273 A CN1741273 A CN 1741273A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 238000002955 isolation Methods 0.000 claims abstract description 212
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 108
- 239000010703 silicon Substances 0.000 claims abstract description 108
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 55
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 55
- 238000000034 method Methods 0.000 claims description 52
- 238000005530 etching Methods 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- 230000000873 masking effect Effects 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 99
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 99
- 230000002093 peripheral effect Effects 0.000 abstract description 87
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 65
- 229920005591 polysilicon Polymers 0.000 description 65
- 229910021332 silicide Inorganic materials 0.000 description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 25
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- 229910052721 tungsten Inorganic materials 0.000 description 19
- 239000010937 tungsten Substances 0.000 description 19
- 238000005755 formation reaction Methods 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 14
- 230000003647 oxidation Effects 0.000 description 14
- 238000007254 oxidation reaction Methods 0.000 description 14
- 239000012535 impurity Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 9
- 238000000227 grinding Methods 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000033228 biological regulation Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000293849 Cordylanthus Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 108091081062 Repeated sequence (DNA) Proteins 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229960002050 hydrofluoric acid Drugs 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
Description
Claims (11)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004235434 | 2004-08-12 | ||
JP235434/04 | 2004-08-12 | ||
JP214776/05 | 2005-07-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1741273A true CN1741273A (zh) | 2006-03-01 |
CN100573870C CN100573870C (zh) | 2009-12-23 |
Family
ID=36093562
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100914776A Expired - Fee Related CN100573870C (zh) | 2004-08-12 | 2005-08-12 | 双浅沟绝缘半导体装置及其制造方法 |
Country Status (2)
Country | Link |
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JP (1) | JP2012028805A (zh) |
CN (1) | CN100573870C (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237358A (zh) * | 2010-04-21 | 2011-11-09 | 美格纳半导体有限公司 | 半导体器件及其制造方法 |
CN104201154A (zh) * | 2014-09-19 | 2014-12-10 | 上海华力微电子有限公司 | 一种改善Flash产品隔离区域的过刻蚀缺陷的方法 |
CN105355586A (zh) * | 2014-08-21 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | 隔离结构的制作方法及半导体器件 |
CN105719997A (zh) * | 2016-02-04 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN107743650A (zh) * | 2015-08-20 | 2018-02-27 | 桑迪士克科技有限责任公司 | Nand存储器的浅沟槽隔离沟槽及方法 |
CN109192699A (zh) * | 2018-09-07 | 2019-01-11 | 德淮半导体有限公司 | 用于制造半导体装置的方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6362373B2 (ja) * | 2014-03-20 | 2018-07-25 | キヤノン株式会社 | 光電変換装置の製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001210809A (ja) * | 2000-01-28 | 2001-08-03 | Toshiba Microelectronics Corp | 半導体装置の製造方法 |
JP3773425B2 (ja) * | 2000-08-10 | 2006-05-10 | 松下電器産業株式会社 | 半導体記憶装置の製造方法 |
JP4537618B2 (ja) * | 2001-06-07 | 2010-09-01 | 株式会社東芝 | 半導体装置及びその製造方法 |
KR100390918B1 (ko) * | 2001-08-30 | 2003-07-12 | 주식회사 하이닉스반도체 | 반도체 메모리 소자의 제조방법 |
JP2005026589A (ja) * | 2003-07-04 | 2005-01-27 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
-
2005
- 2005-08-12 CN CNB2005100914776A patent/CN100573870C/zh not_active Expired - Fee Related
-
2011
- 2011-09-26 JP JP2011208906A patent/JP2012028805A/ja active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237358A (zh) * | 2010-04-21 | 2011-11-09 | 美格纳半导体有限公司 | 半导体器件及其制造方法 |
US8482094B2 (en) | 2010-04-21 | 2013-07-09 | Magnachip Semiconductor, Ltd. | Semiconductor device and method for fabricating the same |
CN102237358B (zh) * | 2010-04-21 | 2014-01-08 | 美格纳半导体有限公司 | 半导体器件及其制造方法 |
US8987112B2 (en) | 2010-04-21 | 2015-03-24 | Magnachip Semiconductor, Ltd. | Semiconductor device and method for fabricating the same |
CN105355586A (zh) * | 2014-08-21 | 2016-02-24 | 中芯国际集成电路制造(上海)有限公司 | 隔离结构的制作方法及半导体器件 |
CN105355586B (zh) * | 2014-08-21 | 2018-07-03 | 中芯国际集成电路制造(上海)有限公司 | 隔离结构的制作方法及半导体器件 |
CN104201154A (zh) * | 2014-09-19 | 2014-12-10 | 上海华力微电子有限公司 | 一种改善Flash产品隔离区域的过刻蚀缺陷的方法 |
CN107743650A (zh) * | 2015-08-20 | 2018-02-27 | 桑迪士克科技有限责任公司 | Nand存储器的浅沟槽隔离沟槽及方法 |
CN107743650B (zh) * | 2015-08-20 | 2021-07-16 | 桑迪士克科技有限责任公司 | Nand存储器的浅沟槽隔离沟槽及方法 |
CN105719997A (zh) * | 2016-02-04 | 2016-06-29 | 上海华虹宏力半导体制造有限公司 | 半导体结构的形成方法 |
CN109192699A (zh) * | 2018-09-07 | 2019-01-11 | 德淮半导体有限公司 | 用于制造半导体装置的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100573870C (zh) | 2009-12-23 |
JP2012028805A (ja) | 2012-02-09 |
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