CN1182583C - 具有增大栅耦合电容的集成电路 - Google Patents
具有增大栅耦合电容的集成电路 Download PDFInfo
- Publication number
- CN1182583C CN1182583C CNB008122016A CN00812201A CN1182583C CN 1182583 C CN1182583 C CN 1182583C CN B008122016 A CNB008122016 A CN B008122016A CN 00812201 A CN00812201 A CN 00812201A CN 1182583 C CN1182583 C CN 1182583C
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- CN
- China
- Prior art keywords
- raceway groove
- packing material
- integrated circuit
- conductive layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008878 coupling Effects 0.000 title claims abstract description 19
- 238000010168 coupling process Methods 0.000 title claims abstract description 19
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000012856 packing Methods 0.000 claims description 70
- 238000005516 engineering process Methods 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 230000003647 oxidation Effects 0.000 claims description 27
- 238000007254 oxidation reaction Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 16
- 239000011810 insulating material Substances 0.000 claims description 9
- 238000006396 nitration reaction Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 99
- 230000004888 barrier function Effects 0.000 description 51
- 210000004027 cell Anatomy 0.000 description 13
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 10
- 238000009413 insulation Methods 0.000 description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 210000003168 insulating cell Anatomy 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101150064138 MAP1 gene Proteins 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- XZWYZXLIPXDOLR-UHFFFAOYSA-N metformin Chemical compound CN(C)C(=N)NC(N)=N XZWYZXLIPXDOLR-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15145899P | 1999-08-30 | 1999-08-30 | |
US60/151,458 | 1999-08-30 | ||
US09/504,087 US6682978B1 (en) | 1999-08-30 | 2000-02-15 | Integrated circuit having increased gate coupling capacitance |
US09/504,087 | 2000-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1371530A CN1371530A (zh) | 2002-09-25 |
CN1182583C true CN1182583C (zh) | 2004-12-29 |
Family
ID=26848650
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB008122016A Expired - Fee Related CN1182583C (zh) | 1999-08-30 | 2000-07-17 | 具有增大栅耦合电容的集成电路 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6682978B1 (zh) |
EP (1) | EP1218941B1 (zh) |
JP (1) | JP4955880B2 (zh) |
KR (1) | KR100724154B1 (zh) |
CN (1) | CN1182583C (zh) |
TW (1) | TW466671B (zh) |
WO (1) | WO2001017023A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7153755B2 (en) * | 2005-01-26 | 2006-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Process to improve programming of memory cells |
KR100700282B1 (ko) * | 2005-12-27 | 2007-03-26 | 동부일렉트로닉스 주식회사 | 반도체 소자의 제조 방법 |
US8642441B1 (en) | 2006-12-15 | 2014-02-04 | Spansion Llc | Self-aligned STI with single poly for manufacturing a flash memory device |
US8551858B2 (en) * | 2010-02-03 | 2013-10-08 | Spansion Llc | Self-aligned SI rich nitride charge trap layer isolation for charge trap flash memory |
CN102386084B (zh) * | 2010-09-01 | 2014-01-08 | 中芯国际集成电路制造(上海)有限公司 | 平坦化晶圆表面的方法 |
CN104347473A (zh) * | 2013-08-05 | 2015-02-11 | 中芯国际集成电路制造(北京)有限公司 | 浅沟槽隔离结构及其形成方法 |
Family Cites Families (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5369586A (en) * | 1976-12-03 | 1978-06-21 | Toshiba Corp | Manufacture for mos type transistor |
JPS6148197A (ja) * | 1984-08-13 | 1986-03-08 | Fujitsu Ltd | チヤ−ジアツプ回路 |
JPS63157444A (ja) * | 1986-12-22 | 1988-06-30 | Nec Corp | 選択酸化膜の製造方法 |
FR2634318B1 (fr) | 1988-07-13 | 1992-02-21 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire integree |
JP3001588B2 (ja) * | 1989-03-30 | 2000-01-24 | 株式会社東芝 | 半導体装置およびその製造方法 |
JPH03101147A (ja) * | 1989-09-13 | 1991-04-25 | Toshiba Corp | 半導体装置の製造方法 |
US5053839A (en) | 1990-01-23 | 1991-10-01 | Texas Instruments Incorporated | Floating gate memory cell and device |
JPH03283467A (ja) * | 1990-03-30 | 1991-12-13 | Toshiba Corp | 不揮発性半導体記憶装置 |
JPH04150052A (ja) * | 1990-10-15 | 1992-05-22 | Seiko Epson Corp | 半導体装置 |
JP2964635B2 (ja) | 1990-11-30 | 1999-10-18 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
JPH0567791A (ja) | 1991-06-20 | 1993-03-19 | Mitsubishi Electric Corp | 電気的に書込および消去可能な半導体記憶装置およびその製造方法 |
JPH05226324A (ja) * | 1992-02-12 | 1993-09-03 | Seiko Epson Corp | 半導体装置の製造方法 |
JPH07106411A (ja) * | 1993-10-05 | 1995-04-21 | Toshiba Corp | 半導体装置の製造方法 |
US5589412A (en) | 1993-12-16 | 1996-12-31 | National Semiconductor Corporation | Method of making increased-density flash EPROM that utilizes a series of planarized, self-aligned, intermediate strips of conductive material to contact the drain regions |
JP2757784B2 (ja) * | 1994-08-29 | 1998-05-25 | 日本電気株式会社 | 半導体装置の製造方法 |
EP0728367B1 (en) | 1994-09-13 | 2003-05-07 | Macronix International Co., Ltd. | A flash eprom transistor array and method for manufacturing the same |
JPH0888285A (ja) | 1994-09-17 | 1996-04-02 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP3308727B2 (ja) * | 1994-09-22 | 2002-07-29 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0897306A (ja) | 1994-09-29 | 1996-04-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US5753951A (en) | 1995-07-25 | 1998-05-19 | International Business Machines Corporation | EEPROM cell with channel hot electron programming and method for forming the same |
JP2687948B2 (ja) * | 1995-10-05 | 1997-12-08 | 日本電気株式会社 | 半導体装置の製造方法 |
US5753525A (en) * | 1995-12-19 | 1998-05-19 | International Business Machines Corporation | Method of making EEPROM cell with improved coupling ratio |
KR100210857B1 (ko) * | 1996-01-03 | 1999-07-15 | 구본준 | 비휘발성 메모리소자 및 그 제조방법 |
JPH09213783A (ja) | 1996-01-31 | 1997-08-15 | Sony Corp | 半導体装置の製造方法 |
JPH09275196A (ja) | 1996-04-03 | 1997-10-21 | Sony Corp | 半導体装置及びその製造方法 |
KR100195208B1 (ko) | 1996-04-15 | 1999-06-15 | 윤종용 | 반도체 장치의 소자분리막 형성 방법 |
KR19980022101A (ko) * | 1996-09-20 | 1998-06-25 | 후 훙츄 | 폴리스페이서 플로팅 게이트를 구비한 이이피롬 셀 디바이스 |
EP0841693A1 (en) | 1996-10-29 | 1998-05-13 | Texas Instruments Incorporated | An erasable programmable read only memory and method of manufacture thereof |
JPH10229137A (ja) * | 1997-02-14 | 1998-08-25 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
US5866465A (en) * | 1997-04-03 | 1999-02-02 | Micron Technology, Inc. | Semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass |
US6258669B1 (en) | 1997-12-18 | 2001-07-10 | Advanced Micro Devices, Inc. | Methods and arrangements for improved formation of control and floating gates in non-volatile memory semiconductor devices |
US6171962B1 (en) * | 1997-12-18 | 2001-01-09 | Advanced Micro Devices, Inc. | Shallow trench isolation formation without planarization mask |
JPH11214499A (ja) * | 1998-01-27 | 1999-08-06 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US5914523A (en) * | 1998-02-17 | 1999-06-22 | National Semiconductor Corp. | Semiconductor device trench isolation structure with polysilicon bias voltage contact |
US6146970A (en) * | 1998-05-26 | 2000-11-14 | Motorola Inc. | Capped shallow trench isolation and method of formation |
US6281555B1 (en) * | 1998-11-06 | 2001-08-28 | Advanced Micro Devices, Inc. | Integrated circuit having isolation structures |
-
2000
- 2000-02-15 US US09/504,087 patent/US6682978B1/en not_active Expired - Lifetime
- 2000-07-17 EP EP00948751.3A patent/EP1218941B1/en not_active Expired - Lifetime
- 2000-07-17 WO PCT/US2000/019572 patent/WO2001017023A1/en active Application Filing
- 2000-07-17 CN CNB008122016A patent/CN1182583C/zh not_active Expired - Fee Related
- 2000-07-17 JP JP2001520470A patent/JP4955880B2/ja not_active Expired - Lifetime
- 2000-07-17 KR KR1020027002796A patent/KR100724154B1/ko not_active IP Right Cessation
- 2000-08-30 TW TW089117592A patent/TW466671B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP1218941B1 (en) | 2014-04-02 |
WO2001017023A1 (en) | 2001-03-08 |
JP2003508916A (ja) | 2003-03-04 |
KR100724154B1 (ko) | 2007-06-04 |
US6682978B1 (en) | 2004-01-27 |
KR20020029771A (ko) | 2002-04-19 |
JP4955880B2 (ja) | 2012-06-20 |
TW466671B (en) | 2001-12-01 |
EP1218941A1 (en) | 2002-07-03 |
CN1371530A (zh) | 2002-09-25 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070413 Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070413 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20070413 Address after: California, USA Patentee after: SPANSION LLC Address before: California, USA Patentee before: Spanson Co. Effective date of registration: 20070413 Address after: California, USA Patentee after: Spanson Co. Address before: California, USA Patentee before: ADVANCED MICRO DEVICES, Inc. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20041229 Termination date: 20150717 |
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EXPY | Termination of patent right or utility model |