BR112014007671A2 - igbt e método de fabricar o mesmo - Google Patents
igbt e método de fabricar o mesmoInfo
- Publication number
- BR112014007671A2 BR112014007671A2 BR112014007671A BR112014007671A BR112014007671A2 BR 112014007671 A2 BR112014007671 A2 BR 112014007671A2 BR 112014007671 A BR112014007671 A BR 112014007671A BR 112014007671 A BR112014007671 A BR 112014007671A BR 112014007671 A2 BR112014007671 A2 BR 112014007671A2
- Authority
- BR
- Brazil
- Prior art keywords
- region
- upper body
- igbt
- body region
- ditch
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 210000000746 body region Anatomy 0.000 abstract 5
- 238000005188 flotation Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/6634—Vertical insulated gate bipolar transistors with a recess formed by etching in the source/emitter contact region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thyristors (AREA)
Abstract
resumo patente de invenção: "igbt e método de fabricar o mesmo". a presente invenção refere-se a um igbt tem uma região emissora, uma região de corpo superior formada abaixo da região emissora, uma região de flutuação formada abaixo da região de corpo superior, uma região de corpo inferior formada abaixo da região de flutuação, um fosso, uma película isolante de porta que cobre a superfície interna do fosso e um eletrodo de porta disposto dentro do fosso. ao olhar ao longo da direção de espessura do substrato semicondutor na distribuição de concentrações de impurezas tipo p dentro da região de corpo superior e dentro da região de flutuação, as quais ficam localizadas abaixo da região emissora, a concentração de impureza tipo p diminui em uma direção para baixo a partir da borda superior da região de corpo superior posicionada abaixo da região emissora, e um valor mínimo é alcançado em uma profundidade prescrevida dentro da região de flutuação.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2011/072274 WO2013046378A1 (ja) | 2011-09-28 | 2011-09-28 | Igbtとその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
BR112014007671A2 true BR112014007671A2 (pt) | 2017-04-18 |
BR112014007671B1 BR112014007671B1 (pt) | 2021-01-26 |
Family
ID=47994487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112014007671-5A BR112014007671B1 (pt) | 2011-09-28 | 2011-09-28 | igbt e método de fabricar o mesmo |
Country Status (10)
Country | Link |
---|---|
US (2) | US9190503B2 (pt) |
EP (1) | EP2763178B1 (pt) |
JP (1) | JP5679068B2 (pt) |
KR (1) | KR101642618B1 (pt) |
CN (1) | CN103843142B (pt) |
AU (1) | AU2011377785B2 (pt) |
BR (1) | BR112014007671B1 (pt) |
MX (1) | MX2014003783A (pt) |
RU (1) | RU2571175C2 (pt) |
WO (1) | WO2013046378A1 (pt) |
Families Citing this family (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5787853B2 (ja) * | 2012-09-12 | 2015-09-30 | 株式会社東芝 | 電力用半導体装置 |
JP2014075483A (ja) * | 2012-10-04 | 2014-04-24 | Sanken Electric Co Ltd | 半導体装置及び半導体装置の製造方法 |
JP6265594B2 (ja) * | 2012-12-21 | 2018-01-24 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、及び半導体装置 |
US9293559B2 (en) | 2013-07-31 | 2016-03-22 | Alpha And Omega Semiconductor Incorporated | Dual trench-gate IGBT structure |
JP6215647B2 (ja) * | 2013-10-22 | 2017-10-18 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US9123770B2 (en) * | 2013-11-18 | 2015-09-01 | Alpha And Omega Semiconductor Incorporated | Charge reservoir IGBT top structure |
JP5989689B2 (ja) * | 2014-01-27 | 2016-09-07 | トヨタ自動車株式会社 | 半導体装置 |
JP6385755B2 (ja) * | 2014-08-08 | 2018-09-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6063915B2 (ja) * | 2014-12-12 | 2017-01-18 | 株式会社豊田中央研究所 | 逆導通igbt |
JP6293688B2 (ja) * | 2015-03-02 | 2018-03-14 | 株式会社豊田中央研究所 | ダイオード及びそのダイオードを内蔵する逆導通igbt |
JP6588363B2 (ja) * | 2016-03-09 | 2019-10-09 | トヨタ自動車株式会社 | スイッチング素子 |
JP6681238B2 (ja) | 2016-03-28 | 2020-04-15 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
KR101870808B1 (ko) * | 2016-06-03 | 2018-06-27 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
KR101870807B1 (ko) | 2016-06-21 | 2018-06-27 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
KR101870809B1 (ko) | 2016-06-21 | 2018-08-02 | 현대오트론 주식회사 | 전력 반도체 소자 |
KR101907460B1 (ko) * | 2016-12-12 | 2018-10-12 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
JP6708266B2 (ja) * | 2017-01-17 | 2020-06-10 | 富士電機株式会社 | 半導体装置 |
DE102017107174B4 (de) * | 2017-04-04 | 2020-10-08 | Infineon Technologies Ag | IGBT mit dV/dt-Steuerbarkeit und Verfahren zum Verarbeiten eines IGBT |
WO2018215727A1 (en) * | 2017-05-25 | 2018-11-29 | Dynex Semiconductor Limited | A semiconductor device |
JP6958093B2 (ja) * | 2017-08-09 | 2021-11-02 | 富士電機株式会社 | 半導体装置 |
JP6825520B2 (ja) * | 2017-09-14 | 2021-02-03 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法、電力変換装置 |
DE102017124872B4 (de) | 2017-10-24 | 2021-02-18 | Infineon Technologies Ag | Verfahren zur Herstellung eines IGBT mit dV/dt-Steuerbarkeit |
DE102017124871B4 (de) | 2017-10-24 | 2021-06-17 | Infineon Technologies Ag | Leistungshalbleiter-Vorrichtung und Verfahren zum Herstellen einer Leistungshalbleiter-Vorrichtung |
KR101977957B1 (ko) | 2017-10-30 | 2019-05-13 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
CN108122990B (zh) * | 2017-12-26 | 2020-07-17 | 中国科学院微电子研究所 | 一种增强抗单粒子能力加固的槽型栅功率器件 |
JP6973510B2 (ja) * | 2018-01-17 | 2021-12-01 | 富士電機株式会社 | 半導体装置 |
KR102042832B1 (ko) | 2018-06-21 | 2019-11-08 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
JP7271659B2 (ja) | 2018-10-18 | 2023-05-11 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | 絶縁ゲートパワー半導体装置、およびそのような装置を製造するための方法 |
KR102119483B1 (ko) | 2018-12-06 | 2020-06-05 | 현대오트론 주식회사 | 전력 반도체 소자 및 그 제조방법 |
KR102110249B1 (ko) | 2018-12-07 | 2020-05-13 | 현대오트론 주식회사 | 전력 반도체 칩 |
WO2020162175A1 (ja) * | 2019-02-04 | 2020-08-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
KR102176701B1 (ko) | 2019-05-08 | 2020-11-10 | 현대오트론 주식회사 | 전력 반도체 소자 |
KR102176702B1 (ko) | 2019-05-08 | 2020-11-10 | 현대오트론 주식회사 | 전력 반도체 소자 |
KR102153550B1 (ko) | 2019-05-08 | 2020-09-08 | 현대오트론 주식회사 | 전력 반도체 소자 |
GB2587645B (en) * | 2019-10-03 | 2022-08-03 | Mqsemi Ag | Semiconductor device having a gate electrode formed in a trench structure |
KR20210056147A (ko) | 2019-11-08 | 2021-05-18 | 현대모비스 주식회사 | 전력 반도체 소자 |
KR20210065759A (ko) | 2019-11-27 | 2021-06-04 | 현대모비스 주식회사 | 전력 반도체 소자 |
KR102321272B1 (ko) | 2019-11-27 | 2021-11-03 | 현대모비스 주식회사 | 전력 반도체 소자 및 그 제조방법 |
KR102251759B1 (ko) | 2019-12-03 | 2021-05-14 | 현대모비스 주식회사 | 전력 반도체 소자 |
KR102187903B1 (ko) | 2019-12-03 | 2020-12-07 | 현대오트론 주식회사 | 전력 반도체 소자 |
KR102251760B1 (ko) | 2019-12-03 | 2021-05-14 | 현대모비스 주식회사 | 전력 반도체 소자 |
KR102141845B1 (ko) * | 2019-12-10 | 2020-08-07 | 주식회사 넥스젠파워 | 고전력 스위칭용 반도체 소자 및 그 제조방법 |
KR102315054B1 (ko) | 2020-05-15 | 2021-10-21 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR102300623B1 (ko) | 2020-05-15 | 2021-09-10 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR102399959B1 (ko) * | 2020-07-23 | 2022-05-19 | (주)쎄미하우 | 절연 게이트 양극성 트랜지스터 |
KR20220079262A (ko) | 2020-12-04 | 2022-06-13 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20220082656A (ko) | 2020-12-10 | 2022-06-17 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20220083264A (ko) | 2020-12-11 | 2022-06-20 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR102437047B1 (ko) | 2020-12-11 | 2022-08-26 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20220083265A (ko) | 2020-12-11 | 2022-06-20 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 소자의 제조방법 |
KR102437048B1 (ko) | 2020-12-11 | 2022-08-26 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR102460422B1 (ko) | 2020-12-11 | 2022-10-31 | 현대모비스 주식회사 | 전력 반도체 칩 및 전력 반도체 시스템 |
KR20230128846A (ko) | 2022-02-28 | 2023-09-05 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20230128845A (ko) | 2022-02-28 | 2023-09-05 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20230128847A (ko) | 2022-02-28 | 2023-09-05 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20230129764A (ko) | 2022-03-02 | 2023-09-11 | 현대모비스 주식회사 | 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법 |
KR20230150663A (ko) | 2022-04-22 | 2023-10-31 | 현대모비스 주식회사 | 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법 |
KR20230151275A (ko) | 2022-04-25 | 2023-11-01 | 현대모비스 주식회사 | 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법 |
KR20230151276A (ko) | 2022-04-25 | 2023-11-01 | 현대모비스 주식회사 | 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법 |
KR20230155856A (ko) | 2022-05-04 | 2023-11-13 | 현대모비스 주식회사 | 전력 반도체 소자 및 전력 반도체 칩 |
KR20240011517A (ko) | 2022-07-19 | 2024-01-26 | 현대모비스 주식회사 | 전력 반도체 소자, 이를 포함하는 전력 반도체 칩 및 이의 제조 방법 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2065642C1 (ru) * | 1992-12-23 | 1996-08-20 | Борис Михайлович Бубукин | Биполярный транзистор с изолированным диэлектриком затвором |
US5751024A (en) * | 1995-03-14 | 1998-05-12 | Mitsubishi Denki Kabushiki Kaisha | Insulated gate semiconductor device |
JP3288218B2 (ja) | 1995-03-14 | 2002-06-04 | 三菱電機株式会社 | 絶縁ゲート型半導体装置およびその製造方法 |
US6172398B1 (en) | 1997-08-11 | 2001-01-09 | Magepower Semiconductor Corp. | Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltage |
JP3409244B2 (ja) | 1998-02-26 | 2003-05-26 | 株式会社豊田中央研究所 | 半導体装置 |
JP4761011B2 (ja) | 1999-05-26 | 2011-08-31 | 株式会社豊田中央研究所 | サイリスタを有する半導体装置及びその製造方法 |
RU2230394C1 (ru) * | 2002-10-11 | 2004-06-10 | ОАО "ОКБ "Искра" | Биполярно-полевой транзистор с комбинированным затвором |
JP4723816B2 (ja) * | 2003-12-24 | 2011-07-13 | 株式会社豊田中央研究所 | 半導体装置 |
US7423316B2 (en) * | 2004-05-12 | 2008-09-09 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Semiconductor devices |
WO2007060716A1 (ja) * | 2005-11-22 | 2007-05-31 | Shindengen Electric Manufacturing Co., Ltd. | トレンチゲートパワー半導体装置 |
JP5036234B2 (ja) * | 2006-07-07 | 2012-09-26 | 三菱電機株式会社 | 半導体装置 |
JP2008177297A (ja) * | 2007-01-17 | 2008-07-31 | Toyota Central R&D Labs Inc | 半導体装置 |
JP5089191B2 (ja) | 2007-02-16 | 2012-12-05 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5443670B2 (ja) * | 2007-02-20 | 2014-03-19 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
US8089134B2 (en) * | 2008-02-06 | 2012-01-03 | Fuji Electric Sytems Co., Ltd. | Semiconductor device |
DE112008003787B4 (de) * | 2008-03-31 | 2015-01-22 | Mitsubishi Electric Corp. | Halbleitervorrichtung |
JP4544360B2 (ja) * | 2008-10-24 | 2010-09-15 | トヨタ自動車株式会社 | Igbtの製造方法 |
JP5261137B2 (ja) * | 2008-11-04 | 2013-08-14 | 株式会社豊田中央研究所 | バイポーラ型半導体装置 |
JP2010165978A (ja) * | 2009-01-19 | 2010-07-29 | Panasonic Corp | 半導体装置およびその製造方法 |
JP4957840B2 (ja) * | 2010-02-05 | 2012-06-20 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JP5594276B2 (ja) * | 2010-12-08 | 2014-09-24 | 株式会社デンソー | 絶縁ゲート型半導体装置 |
JP5817686B2 (ja) * | 2011-11-30 | 2015-11-18 | 株式会社デンソー | 半導体装置 |
-
2011
- 2011-09-28 RU RU2014111414/28A patent/RU2571175C2/ru active
- 2011-09-28 MX MX2014003783A patent/MX2014003783A/es active IP Right Grant
- 2011-09-28 BR BR112014007671-5A patent/BR112014007671B1/pt active IP Right Grant
- 2011-09-28 US US14/347,897 patent/US9190503B2/en active Active
- 2011-09-28 JP JP2013535727A patent/JP5679068B2/ja active Active
- 2011-09-28 KR KR1020147008129A patent/KR101642618B1/ko active IP Right Grant
- 2011-09-28 WO PCT/JP2011/072274 patent/WO2013046378A1/ja active Application Filing
- 2011-09-28 EP EP11873183.5A patent/EP2763178B1/en active Active
- 2011-09-28 CN CN201180073862.1A patent/CN103843142B/zh active Active
- 2011-09-28 AU AU2011377785A patent/AU2011377785B2/en active Active
-
2015
- 2015-10-15 US US14/884,203 patent/US9601592B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN103843142A (zh) | 2014-06-04 |
KR20140057630A (ko) | 2014-05-13 |
JPWO2013046378A1 (ja) | 2015-03-26 |
AU2011377785B2 (en) | 2014-11-06 |
EP2763178A1 (en) | 2014-08-06 |
RU2014111414A (ru) | 2015-11-10 |
US20160035859A1 (en) | 2016-02-04 |
JP5679068B2 (ja) | 2015-03-04 |
EP2763178A4 (en) | 2015-03-18 |
KR101642618B1 (ko) | 2016-07-25 |
BR112014007671B1 (pt) | 2021-01-26 |
RU2571175C2 (ru) | 2015-12-20 |
WO2013046378A1 (ja) | 2013-04-04 |
US9190503B2 (en) | 2015-11-17 |
AU2011377785A1 (en) | 2014-04-17 |
US20140231866A1 (en) | 2014-08-21 |
US9601592B2 (en) | 2017-03-21 |
EP2763178B1 (en) | 2021-03-24 |
CN103843142B (zh) | 2016-07-13 |
MX2014003783A (es) | 2014-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BR112014007671A2 (pt) | igbt e método de fabricar o mesmo | |
MX2013012149A (es) | Dispositivo semiconductor y metodo de fabricacion del mismo. | |
BR112014002246A2 (pt) | dispositivo semicondutor | |
BR112014002348A2 (pt) | método de controle da taxa de corrosão em artigo de fundo de poço e artigo de fundo de poço que controla a taxa de corrosão | |
BR112016002017A2 (pt) | transistor de efeito de campo e método para produzir transistor de efeito de campo | |
EP2620983A4 (en) | SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING THE SAME | |
BR112017010750A2 (pt) | estrutura envolvente de contato | |
BR112014012981A2 (pt) | degradação eletrolítica controlada de ferramentas de fundo de poço | |
BR112014031949A2 (pt) | células solares | |
EP3540782A3 (en) | Semiconductor devices having a recessed electrode structure | |
EP4220743A3 (en) | Light emitting diode | |
BR112015021591A2 (pt) | artigo metálico independente para semicondutores | |
TW201613098A (en) | Semiconductor device | |
WO2013023094A3 (en) | Vertical gate ldmos device | |
BR112013004655A2 (pt) | Método de fabricação de um objeto tridimensional flexível | |
SG159451A1 (en) | Reliable interconnects | |
MY179504A (en) | Optoelectronic component | |
BR112015029612A2 (pt) | dispositivo de emissão de luz de semicondutor | |
EP2688104A4 (en) | SEMICONDUCTOR DEVICE | |
BR112015020205A2 (pt) | montagem de spoiler de elevação rebaixado para aerofólios | |
GB201304474D0 (en) | Transistor having replacement metal gate and process for fabricating the same | |
BR112015024888A2 (pt) | igbt com uso de eletrodo de porta de trincheira | |
BR112015012736A2 (pt) | dispositivo semicondutor | |
BR112019016822A2 (pt) | dispositivo semicondutor e método de fabricação do mesmo | |
WO2011123650A3 (en) | Vertical structure led current spreading by implanted regions |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B06F | Objections, documents and/or translations needed after an examination request according art. 34 industrial property law | ||
B06U | Preliminary requirement: requests with searches performed by other patent offices: suspension of the patent application procedure | ||
B09A | Decision: intention to grant | ||
B16A | Patent or certificate of addition of invention granted |
Free format text: PRAZO DE VALIDADE: 20 (VINTE) ANOS CONTADOS A PARTIR DE 28/09/2011, OBSERVADAS AS CONDICOES LEGAIS. |