JP6708266B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6708266B2 JP6708266B2 JP2018563316A JP2018563316A JP6708266B2 JP 6708266 B2 JP6708266 B2 JP 6708266B2 JP 2018563316 A JP2018563316 A JP 2018563316A JP 2018563316 A JP2018563316 A JP 2018563316A JP 6708266 B2 JP6708266 B2 JP 6708266B2
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- 229910052739 hydrogen Inorganic materials 0.000 description 36
- 239000001257 hydrogen Substances 0.000 description 35
- -1 hydrogen ions Chemical class 0.000 description 29
- 230000001133 acceleration Effects 0.000 description 24
- 238000000034 method Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 6
- 239000001307 helium Substances 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- 238000002513 implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
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Description
特許文献1 米国特許出願公開第2016/0172438号明細書
特許文献2 米国特許出願公開第2008/0001257号明細書
y=−0.0047x4+0.0528x3−0.2211x2+0.9923x+5.0474 ・・・(1)
y=−0.00135x6+0.01761x5−0.07529x4+0.08228x3+0.21880x2+0.41061x−0.98152 ・・・(2)
nc=εs・Ec/q
ここで、εsは半導体の誘電率であり、qは電荷素量であり、Ecは半導体の絶縁破壊電界強度である。例えばシリコンの場合、Ecが1.8E5〜2.5E5(V/cm)であるので、ncは1.2E12〜1.6E12(/cm2)である。
Claims (16)
- 第1導電型の半導体基板と、
前記半導体基板に設けられた前記第1導電型のドリフト層と、
前記ドリフト層に設けられ、前記第1導電型であるドーピング濃度の複数のピークを有するバッファ領域と、
を備え、
前記バッファ領域は、
予め定められたドーピング濃度を有し、前記複数のピークのうち前記半導体基板の最も裏面側に設けられた第1ピークと、
前記第1ピークのドーピング濃度よりも高濃度のドーピング濃度を有し、前記第1ピークよりも前記半導体基板の上面側に設けられた高濃度ピークと、
前記高濃度ピークのドーピング濃度よりも低濃度のドーピング濃度を有し、前記高濃度ピークよりも前記半導体基板の上面側に設けられた低濃度ピークと
を有し、
前記高濃度ピークは、前記複数のピークのうち前記半導体基板の裏面側から前記第1ピークの次に設けられた第2ピークであり、
前記第1ピークと前記第2ピークの間のドーピング濃度の谷のドーピング濃度NV12と、前記第1ピークのドーピング濃度N1との比(N1/NV12)が、
前記第2ピークのドーピング濃度N2と前記第1ピークのドーピング濃度N1との比(N2/N1)よりも高く、
トランジスタ部およびダイオード部を有し、
前記ダイオード部は、前記第1ピークよりも前記半導体基板の裏面側に前記第1導電型と異なる第2導電型のフローティング層を有する、
半導体装置。 - 前記第2ピークは、前記複数のピークのうち最も高濃度のピークである
請求項1に記載の半導体装置。 - 前記第2ピークは、前記半導体基板の裏面から1μm以上、12μm以下の位置に設けられる
請求項1又は2に記載の半導体装置。 - 前記第1ピークと前記第2ピークの間のドーピング濃度の谷のドーピング濃度が、前記半導体基板の基板濃度の10倍以上である
請求項1から3のいずれか一項に記載の半導体装置。 - 前記第1ピークのドーピング濃度N1と前記第2ピークのドーピング濃度N2のドーピング濃度比率N2/N1が、1より大きく、且つ、100以下である
請求項1から4のいずれか一項に記載の半導体装置。 - 前記第1ピークは、前記複数のピークのうち前記第2ピークの次に高濃度のピークである
請求項1から5のいずれか一項に記載の半導体装置。 - 前記半導体基板は、前記複数のピークのピーク同士の間に複数の谷を有し、前記複数の谷のドーピング濃度が前記裏面側から前記上面側に向けて順次下がるドーピング濃度分布を有する
請求項1から6のいずれか一項に記載の半導体装置。 - 前記トランジスタ部の裏面に第2導電型のコレクタ領域を有し、
該コレクタ領域から前記第2ピークまでの積分濃度が、前記半導体基板の臨界積分濃度の半分より高い
請求項1から7のいずれか一項に記載の半導体装置。 - 前記バッファ領域は、前記複数のピークのうち前記半導体基板の裏面側から前記第2ピークの次に設けられた第3ピークを更に備え、
前記第3ピークのドーピング濃度N3は、前記第1ピークと前記第2ピークの間のドーピング濃度の谷のドーピング濃度NV12よりも小さい
請求項1から8のいずれか一項に記載の半導体装置。 - 前記第2ピークと前記第1ピークとの深さ方向の距離X2−X1は、前記第1ピークの前記半導体基板の裏面からの深さX1よりも小さい
請求項1から9のいずれか一項に記載の半導体装置。 - 前記第1ピークおよび前記コレクタ領域の境界位置の、前記半導体基板の裏面からの深さX0は、前記第1ピークと、前記第1ピークおよび前記コレクタ領域の境界位置との深さ方向の距離X1−X0よりも小さい
請求項8に記載の半導体装置。 - 前記第1ピークおよび前記コレクタ領域の境界位置の、前記半導体基板の裏面からの深さX0は、前記第1ピークと、前記第1ピークおよび前記コレクタ領域の境界位置との深さ方向の距離X1−X0よりも大きい
請求項8に記載の半導体装置。 - 前記第1ピークと前記フローティング層の境界位置の前記半導体基板の裏面からの距離Xbが、前記第1ピークと、前記第1ピークおよび前記フローティング層の境界位置との距離X1−Xbよりも小さい
請求項1から12のいずれか一項に記載の半導体装置。 - 第1導電型の半導体基板と、
前記半導体基板に設けられた前記第1導電型のドリフト層と、
前記ドリフト層に設けられ、前記第1導電型であるドーピング濃度の複数のピークを有するバッファ領域と
を備え、
前記複数のピークは、n個のドーピング濃度分布のピークPn(nは5以上の整数)を有し、前記ピークPnのうち、前記半導体基板の裏面側からi番目のピークPiのドーピング濃度をドーピング濃度NPiとし、前記i番目のピークPiよりも前記半導体基板の裏面側の谷Biのドーピング濃度をそれぞれドーピング濃度NBiとした場合、NPi/NBi+1≦10となる前記ピークと前記谷のペアを5つ以上有する
半導体装置。 - 前記谷のドーピング濃度NBiの全てを結ぶ包絡線は、谷B1から谷Bn+1に向かって、指数関数的、若しくは、指数関数よりも緩やかに減衰する
請求項14に記載の半導体装置。 - 前記谷のドーピング濃度NBiの全てを結ぶ包絡線は、ドーピング濃度が小さい側に凸状に減衰する
請求項14に記載の半導体装置。
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