JP7272454B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP7272454B2 JP7272454B2 JP2021552349A JP2021552349A JP7272454B2 JP 7272454 B2 JP7272454 B2 JP 7272454B2 JP 2021552349 A JP2021552349 A JP 2021552349A JP 2021552349 A JP2021552349 A JP 2021552349A JP 7272454 B2 JP7272454 B2 JP 7272454B2
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Description
特許文献1 国際公開第2011-052787号
特許文献2 米国特許出願公開第2015/0214347号明細書
Ec(εrε0/q)=nc
である。シリコンの比誘電率は、11.9である。臨界積分濃度ncは、8.0×1011(/cm2)以上であってよい。また、臨界積分濃度ncは2.0×1012(/cm2)以下であってよい。本例では、臨界積分濃度ncは1.2×1012(/cm2)である。
Claims (22)
- バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
前記半導体基板の上面および前記下面の間に定格電流の1/10の電流を流した場合の基準キャリア濃度よりも、前記最浅濃度ピークのドーピング濃度が低い
半導体装置。 - バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
トランジスタ部およびダイオード部を備え、
前記ダイオード部は、
前記第1バッファ領域と、
前記第1バッファ領域と前記半導体基板の前記下面との間に設けられた第1導電型のカソード領域と
を有し、
前記トランジスタ部は、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第2バッファ領域と、
前記第2バッファ領域と前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域と
を有し、
前記第2バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い前記ドーピング濃度ピークのドーピング濃度が、前記第1バッファ領域の前記最浅濃度ピークのドーピング濃度よりも高い
半導体装置。 - バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
トランジスタ部およびダイオード部を備え、
前記ダイオード部は、
前記第1バッファ領域と、
前記第1バッファ領域と前記半導体基板の前記下面との間に設けられた第1導電型のカソード領域と
を有し、
前記トランジスタ部は、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第2バッファ領域と、
前記第2バッファ領域と前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域と
を有し、
前記最浅濃度ピークと前記カソード領域との間のドナー濃度の谷部の極小値は、前記第2バッファ領域の最浅濃度ピークと前記コレクタ領域との境界のドナー濃度よりも小さい
半導体装置。 - バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記最浅濃度ピークのドーピング濃度が、前記半導体基板の前記下面から最も遠い前記ドーピング濃度ピークよりも小さい
半導体装置。 - 前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記最浅濃度ピークのドーピング濃度が、他の前記ドーピング濃度ピークのいずれよりも小さい
請求項4に記載の半導体装置。 - バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記バルク・ドナー濃度の10倍以下である
半導体装置。 - バルク・ドナーを含む半導体基板と、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第1バッファ領域と、
トランジスタ部およびダイオード部を備え、
前記第1バッファ領域の前記ドーピング濃度ピークのうち、前記半導体基板の前記下面に最も近い最浅濃度ピークのドーピング濃度が、前記半導体基板のバルク・ドナー濃度の50倍以下であり、
前記ダイオード部は、
前記第1バッファ領域と、
前記第1バッファ領域と前記半導体基板の前記下面との間に設けられた第1導電型のカソード領域と
を有し、
前記トランジスタ部は、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第2バッファ領域と、
前記第2バッファ領域と前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域と
を有し、
前記トランジスタ部の前記最浅濃度ピークと前記コレクタ領域との境界におけるドナー濃度が、前記ダイオード部の前記最浅濃度ピークに隣り合う第2濃度ピークより大きい
半導体装置。 - 前記第1バッファ領域の全ての前記ドーピング濃度ピークのドーピング濃度が、前記バルク・ドナー濃度の50倍以下である
請求項1から7のいずれか一項に記載の半導体装置。 - 前記第1バッファ領域は、2つ以上の前記ドーピング濃度ピークを有し、少なくとも一つの前記ドーピング濃度ピークのドーピング濃度が、前記バルク・ドナー濃度の50倍より高い
請求項1から7のいずれか一項に記載の半導体装置。 - 前記第1バッファ領域は、2つ以上の前記ドーピング濃度ピークを有し、少なくとも一つの前記ドーピング濃度ピークのドーピング濃度が、前記最浅濃度ピークのドーピング濃度より高い
請求項1から8のいずれか一項に記載の半導体装置。 - 前記最浅濃度ピークのドーピング濃度は、前記最浅濃度ピークに最も近い前記ドーピング濃度ピークのドーピング濃度よりも低い
請求項10に記載の半導体装置。 - 前記半導体基板の上面に配置されたトレンチ部を更に備え、
前記トレンチ部の下端から前記半導体基板の前記下面に向かって前記半導体基板のドーピング濃度を積分した濃度を積分濃度とし、前記積分濃度が前記半導体基板の臨界積分濃度に達する位置を臨界位置とした場合に、
前記臨界位置は、前記最浅濃度ピークと重なるか、または、前記最浅濃度ピークよりも前記トレンチ部側に配置されている
請求項1から11のいずれか一項に記載の半導体装置。 - 前記最浅濃度ピークと前記半導体基板の前記下面との間に設けられ、ドーピング濃度のピーク値が前記最浅濃度ピークよりも高い第1導電型のカソード領域を更に備える
請求項1または4から6のいずれか一項に記載の半導体装置。 - 前記最浅濃度ピークと前記半導体基板の前記下面との間に設けられた第2導電型の下面側領域を更に備える
請求項13に記載の半導体装置。 - 前記最浅濃度ピークと前記カソード領域との間のドナー濃度の谷部の極小値は、前記最浅濃度ピークよりも前記半導体基板の上面側において、前記最浅濃度ピークに隣り合う第2濃度ピークより小さい
請求項13に記載の半導体装置。 - 前記最浅濃度ピークと前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域を備える
請求項1または4から6のいずれか一項に記載の半導体装置。 - トランジスタ部およびダイオード部を備え、
前記ダイオード部は、
前記第1バッファ領域と、
前記第1バッファ領域と前記半導体基板の前記下面との間に設けられた第1導電型のカソード領域と
を有し、
前記トランジスタ部は、
前記半導体基板の下面側に設けられ、前記半導体基板の深さ方向において、1つ以上のドーピング濃度ピークと、1つ以上の水素濃度ピークとを有する第1導電型の第2バッファ領域と、
前記第2バッファ領域と前記半導体基板の前記下面との間に設けられた第2導電型のコレクタ領域と
を有する請求項1または4から6のいずれか一項に記載の半導体装置。 - 前記第2バッファ領域におけるそれぞれの前記ドーピング濃度ピークのドーピング濃度は、前記第1バッファ領域において同一の深さ位置に設けられた前記ドーピング濃度ピークのドーピング濃度と同一である
請求項17に記載の半導体装置。 - トランジスタ部およびダイオード部を備える半導体装置の製造方法であって、
前記トランジスタ部のエミッタ領域および前記ダイオード部のアノード領域を、バルク・ドナーを含む半導体基板の上面に形成する活性領域形成工程と、
前記半導体基板の下面から、前記トランジスタ部および前記ダイオード部に第1導電型の第1ドーパントをイオン注入し、且つ、前記半導体基板の下面から、前記トランジスタ部に第1導電型の第2ドーパントをイオン注入するイオン注入工程を備え、
前記第1ドーパントを注入する深さ位置と、前記第2ドーパントを注入する深さ位置とが同一である
半導体装置の製造方法。 - トランジスタ部およびダイオード部を備える半導体装置の製造方法であって、
前記トランジスタ部のエミッタ領域および前記ダイオード部のアノード領域を、バルク・ドナーを含む半導体基板の上面に形成する活性領域形成工程と、
前記半導体基板の下面から、前記トランジスタ部および前記ダイオード部に第1導電型の第1ドーパントをイオン注入し、且つ、前記半導体基板の下面から、前記トランジスタ部に第1導電型の第2ドーパントをイオン注入し、前記ダイオード部にはイオン注入しないイオン注入工程を備える
半導体装置の製造方法。 - 前記第1ドーパントは水素である
請求項19または20に記載の半導体装置の製造方法。 - 前記第2ドーパントは水素、リン、砒素のいずれかである
請求項19から21のいずれか一項に記載の半導体装置の製造方法。
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