AU2002220818B2 - Field effect transistors and materials and methods for their manufacture - Google Patents

Field effect transistors and materials and methods for their manufacture Download PDF

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Publication number
AU2002220818B2
AU2002220818B2 AU2002220818A AU2002220818A AU2002220818B2 AU 2002220818 B2 AU2002220818 B2 AU 2002220818B2 AU 2002220818 A AU2002220818 A AU 2002220818A AU 2002220818 A AU2002220818 A AU 2002220818A AU 2002220818 B2 AU2002220818 B2 AU 2002220818B2
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AU
Australia
Prior art keywords
binder
field effect
organic
semiconductor
effect transistor
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Ceased
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AU2002220818A
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English (en)
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AU2002220818A1 (en
Inventor
Beverley Anne Brown
Domenico Carlo Cupertino
Stephen William Leeming
John David Schofield
Janos Veres
Stephen George Yeates
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Merck Patent GmbH
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Merck Patent GmbH
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Publication of AU2002220818B2 publication Critical patent/AU2002220818B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
AU2002220818A 2000-11-28 2001-11-21 Field effect transistors and materials and methods for their manufacture Ceased AU2002220818B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0028867.0 2000-11-28
GBGB0028867.0A GB0028867D0 (en) 2000-11-28 2000-11-28 Field effect translators,methods for the manufacture thereof and materials therefor
PCT/GB2001/005145 WO2002045184A1 (en) 2000-11-28 2001-11-21 Field effect transistors and materials and methods for their manufacture

Publications (2)

Publication Number Publication Date
AU2002220818A1 AU2002220818A1 (en) 2002-08-15
AU2002220818B2 true AU2002220818B2 (en) 2006-09-28

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AU2081802A Pending AU2081802A (en) 2000-11-28 2001-11-21 Field effect transistors and materials and methods for their manufacture
AU2002220818A Ceased AU2002220818B2 (en) 2000-11-28 2001-11-21 Field effect transistors and materials and methods for their manufacture

Family Applications Before (1)

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AU2081802A Pending AU2081802A (en) 2000-11-28 2001-11-21 Field effect transistors and materials and methods for their manufacture

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EP (1) EP1340270B1 (US07095044-20060822-C00010.png)
JP (2) JP4429603B2 (US07095044-20060822-C00010.png)
KR (1) KR100824026B1 (US07095044-20060822-C00010.png)
CN (1) CN100416882C (US07095044-20060822-C00010.png)
AT (1) ATE350769T1 (US07095044-20060822-C00010.png)
AU (2) AU2081802A (US07095044-20060822-C00010.png)
CA (1) CA2427222C (US07095044-20060822-C00010.png)
DE (1) DE60125819T2 (US07095044-20060822-C00010.png)
GB (1) GB0028867D0 (US07095044-20060822-C00010.png)
WO (1) WO2002045184A1 (US07095044-20060822-C00010.png)

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CA2427222C (en) 2014-08-12
JP4429603B2 (ja) 2010-03-10
JP2004525501A (ja) 2004-08-19
DE60125819D1 (de) 2007-02-15
CN1478309A (zh) 2004-02-25
US20040038459A1 (en) 2004-02-26
CA2427222A1 (en) 2002-06-06
CN100416882C (zh) 2008-09-03
JP2010028123A (ja) 2010-02-04
GB0028867D0 (en) 2001-01-10
AU2081802A (en) 2002-06-11
DE60125819T2 (de) 2007-10-11
KR20030055318A (ko) 2003-07-02
EP1340270A1 (en) 2003-09-03
US7095044B2 (en) 2006-08-22
EP1340270B1 (en) 2007-01-03
ATE350769T1 (de) 2007-01-15
WO2002045184A1 (en) 2002-06-06

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