AU2001236820A1 - Semiconductor structure - Google Patents
Semiconductor structureInfo
- Publication number
- AU2001236820A1 AU2001236820A1 AU2001236820A AU3682001A AU2001236820A1 AU 2001236820 A1 AU2001236820 A1 AU 2001236820A1 AU 2001236820 A AU2001236820 A AU 2001236820A AU 3682001 A AU3682001 A AU 3682001A AU 2001236820 A1 AU2001236820 A1 AU 2001236820A1
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor structure
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01S5/00—Semiconductor lasers
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- H01S5/021—Silicon based substrates
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Recrystallisation Techniques (AREA)
- Semiconductor Memories (AREA)
- Bipolar Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09502023 | 2000-02-10 | ||
US09/502,023 US6392257B1 (en) | 2000-02-10 | 2000-02-10 | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
PCT/US2001/004209 WO2001059820A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001236820A1 true AU2001236820A1 (en) | 2001-08-20 |
Family
ID=23995993
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001234999A Abandoned AU2001234999A1 (en) | 2000-02-10 | 2001-02-08 | A process for forming a semiconductor structure |
AU2001236820A Abandoned AU2001236820A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor structure |
AU2001234972A Abandoned AU2001234972A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor structure |
AU2001238137A Abandoned AU2001238137A1 (en) | 2000-02-10 | 2001-02-08 | Communicating device |
AU2001236895A Abandoned AU2001236895A1 (en) | 2000-02-10 | 2001-02-08 | Integrated circuit |
AU2001234973A Abandoned AU2001234973A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor devices |
AU2001234993A Abandoned AU2001234993A1 (en) | 2000-02-10 | 2001-02-08 | A process for forming a semiconductor structure |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001234999A Abandoned AU2001234999A1 (en) | 2000-02-10 | 2001-02-08 | A process for forming a semiconductor structure |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001234972A Abandoned AU2001234972A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor structure |
AU2001238137A Abandoned AU2001238137A1 (en) | 2000-02-10 | 2001-02-08 | Communicating device |
AU2001236895A Abandoned AU2001236895A1 (en) | 2000-02-10 | 2001-02-08 | Integrated circuit |
AU2001234973A Abandoned AU2001234973A1 (en) | 2000-02-10 | 2001-02-08 | Semiconductor devices |
AU2001234993A Abandoned AU2001234993A1 (en) | 2000-02-10 | 2001-02-08 | A process for forming a semiconductor structure |
Country Status (9)
Country | Link |
---|---|
US (9) | US6392257B1 (zh) |
EP (5) | EP1258038A1 (zh) |
JP (5) | JP2003523078A (zh) |
KR (5) | KR100695662B1 (zh) |
CN (5) | CN1398423A (zh) |
AU (7) | AU2001234999A1 (zh) |
CA (2) | CA2399394A1 (zh) |
TW (6) | TWI301292B (zh) |
WO (7) | WO2001059820A1 (zh) |
Families Citing this family (141)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19942692B4 (de) * | 1999-09-07 | 2007-04-12 | Infineon Technologies Ag | Optoelektronische Mikroelektronikanordnung |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US20020030246A1 (en) * | 2000-06-28 | 2002-03-14 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate |
WO2002003437A1 (en) * | 2000-06-30 | 2002-01-10 | Motorola, Inc., A Corporation Of The State Of Delaware | Hybrid semiconductor structure and device |
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