TW494450B - Communicating device - Google Patents
Communicating device Download PDFInfo
- Publication number
- TW494450B TW494450B TW090102845A TW90102845A TW494450B TW 494450 B TW494450 B TW 494450B TW 090102845 A TW090102845 A TW 090102845A TW 90102845 A TW90102845 A TW 90102845A TW 494450 B TW494450 B TW 494450B
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- Taiwan
- Prior art keywords
- layer
- composition
- semiconductor
- single crystal
- buffer layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 claims abstract description 201
- 239000000463 material Substances 0.000 claims abstract description 122
- 239000000872 buffer Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000004891 communication Methods 0.000 claims abstract description 25
- 239000013078 crystal Substances 0.000 claims description 181
- 239000000203 mixture Substances 0.000 claims description 121
- 238000011049 filling Methods 0.000 claims description 31
- 238000012545 processing Methods 0.000 claims description 18
- 230000002079 cooperative effect Effects 0.000 claims description 12
- 241000219112 Cucumis Species 0.000 claims 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 claims 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 43
- 229910052710 silicon Inorganic materials 0.000 abstract description 43
- 239000010703 silicon Substances 0.000 abstract description 43
- 235000012431 wafers Nutrition 0.000 abstract description 36
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 9
- 150000001875 compounds Chemical class 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 328
- 238000000034 method Methods 0.000 description 42
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 21
- 238000002955 isolation Methods 0.000 description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 18
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 18
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 15
- 210000002816 gill Anatomy 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 229910052732 germanium Inorganic materials 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 14
- 229910052788 barium Inorganic materials 0.000 description 13
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 150000001342 alkaline earth metals Chemical class 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- -1 etc.) Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 9
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000000875 corresponding effect Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 4
- 239000012536 storage buffer Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- 229910021523 barium zirconate Inorganic materials 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000002178 crystalline material Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 2
- 229910003452 thorium oxide Inorganic materials 0.000 description 2
- PEUPCBAALXHYHP-UHFFFAOYSA-L zinc;selenite Chemical compound [Zn+2].[O-][Se]([O-])=O PEUPCBAALXHYHP-UHFFFAOYSA-L 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MBMLMWLHJBBADN-UHFFFAOYSA-N Ferrous sulfide Chemical compound [Fe]=S MBMLMWLHJBBADN-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 102000005298 Iron-Sulfur Proteins Human genes 0.000 description 1
- 108010081409 Iron-Sulfur Proteins Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- NADDYNUVLPNTIE-UHFFFAOYSA-N [As].[Ti] Chemical compound [As].[Ti] NADDYNUVLPNTIE-UHFFFAOYSA-N 0.000 description 1
- RKOQXLNCVUMHFI-UHFFFAOYSA-N [Hf].[Ba] Chemical compound [Hf].[Ba] RKOQXLNCVUMHFI-UHFFFAOYSA-N 0.000 description 1
- KEQFKZKZXRNGKY-UHFFFAOYSA-N [O].[P].[Ba] Chemical compound [O].[P].[Ba] KEQFKZKZXRNGKY-UHFFFAOYSA-N 0.000 description 1
- BZIYOLBNTLVDKJ-UHFFFAOYSA-N [Os+4].[O-2].[La+3] Chemical compound [Os+4].[O-2].[La+3] BZIYOLBNTLVDKJ-UHFFFAOYSA-N 0.000 description 1
- LUAOBKLTCDRDOQ-UHFFFAOYSA-L [Se](=S)([O-])[O-].[Zn+2] Chemical compound [Se](=S)([O-])[O-].[Zn+2] LUAOBKLTCDRDOQ-UHFFFAOYSA-L 0.000 description 1
- IPCGGVKCDVFDQU-UHFFFAOYSA-N [Zn].[Se]=S Chemical compound [Zn].[Se]=S IPCGGVKCDVFDQU-UHFFFAOYSA-N 0.000 description 1
- SFDZPIDEIFZWQV-UHFFFAOYSA-N acetic acid;barium Chemical compound [Ba].CC(O)=O SFDZPIDEIFZWQV-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- FIJMPJIZAQHCBA-UHFFFAOYSA-N arsanylidynezirconium Chemical group [Zr]#[As] FIJMPJIZAQHCBA-UHFFFAOYSA-N 0.000 description 1
- 239000005441 aurora Substances 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- BOGASOWHESMEKT-UHFFFAOYSA-N barium;oxotin Chemical compound [Ba].[Sn]=O BOGASOWHESMEKT-UHFFFAOYSA-N 0.000 description 1
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- ZPPUVHMHXRANPA-UHFFFAOYSA-N germanium titanium Chemical compound [Ti].[Ge] ZPPUVHMHXRANPA-UHFFFAOYSA-N 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000003362 semiconductor superlattice Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02469—Group 12/16 materials
- H01L21/02472—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02513—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
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- Bipolar Transistors (AREA)
Description
494450 經濟部智慧財產局員工消費合作社印製 A7 B7_五、發明說明(1 ) 發明範噃 本發明通常與包含半導體結構的通信裝置有關,尤其, 本發明與組合物半導體結構及半導體結構之製造暨使用有 關,其中該半導體結構包含一單晶組合物半導體材料。 發明背景 絕大部分的半導體離散裝置及積體電路都是以矽爲材料 所製造而成,至少在某種程度上是因爲低成本、高品質單 晶矽基材的可用性所致。諸如所謂的組合物半導體材料之 類的其他半導體材料具有物理屬性包括比碎更寬的帶隙及 /或更高的遷移率,或是使這些材料非常適用於特定半導體 裝置的直接帶隙。可惜,組合物半導體材料的成本通常高 於矽,並且在大型晶圓中,不如矽那樣容易取得。晶圓中 可取得的神化鎵(Gallium arsenide ; GaAs)(最容易取得的組 合物半導體材料)的直徑最大只有大約150微米(mm)。相反 地,可取得的矽晶圓具有最大大約3 00毫米(mm)的直徑,並 且最廣泛使用的是200 mm。150 mm GaAs晶圓的成本高於 對應的矽晶圓許多倍。其他的組合物半導體材料晶圓更不 容易取得,並且成本比GaAs更高。 因爲希望有組合物半導體材料的特性,並且因爲通常目 前其成本高及較無法取得大容積形式,所以許多年來已嘗 試在異質基材上生長組合物半導體材料薄膜。然而,爲了 實現最佳的組合物半導體材料特性,需要高結晶品質的單 晶膜。例如,已嘗試在鍺、矽及各種隔離體上生長單晶組 合物半導體材料層。這些嘗試尚未成功,因爲主晶與生長 -4- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 — — — — — — — — — > 經濟部智慧財產局員工消費合作社印製 494450 A7 __B7 五、發明說明(2 ) 晶間的晶格不匹配,導致所產生的組合物半導體材料薄膜 的結晶品質不佳。 如果以低成本取得大面積高品質單晶組合物半導體材料 .薄膜,則有助於以低成本在該薄膜上製造各種半導體裝置 ,其成本低於在組合物半導體材料的大容積晶圓上製造此 類裝置的成本,或是低於在組合物半導體材料之大容積晶 圓上此類材料的系晶膜中製造此類裝置的成本。此外,如 果能夠在諸如矽晶圓的大容積晶圓上體現高品質單晶組合 物半導體材料的薄膜,則可利用矽及組合物半導體材料的 特性來實現積體裝置結構。 因此,需要有一種使用一半導體結構的通信裝置存在, 其中該半導體結構能夠提供優於另一種單晶材料的高品質 單晶組合物半導體膜。 圖式簡單説明 本發明將藉由範例及附圖來進行解説,但本發明未限定 在這些範例及附圖内,其中相似的參照代表相似的元件, 並且其中: 圖1、2、4、5顯示根據本發明各種具體實施例之裝置結 構的斷面圖; 圖3以圖表顯示可獲得的最大膜厚度與主晶和生長結晶 覆蓋層間晶格不匹配間的關係; 圖6顯示通信裝置一部分的方塊圖; 圖7到11顯示包括組合物半導體部分、雙極性部分及MOS 部分之積體電路一部分的斷面圖;以及 -5- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) --------訂—------- > 經濟部智慧財產局員工消費合作社印製 494450 A7 __B7_____ 五、發明說明(3 ) 圖12到18顯示包括半導體雷射及MOS電晶體之另一積體 電路·一部分的斷面圖。 熟知技藝人士應明白,圖中的元件是簡化的圖解,並且 不需要按比例繪製。例如,相對於其他元件,圖中部分元 件的尺寸可能過度放大,以利於更容易瞭解本發明的具體 實施例。 圖式詳細説明 圖1顯示根據本發明一項具體實施例之半導體結構20之 一部分的斷面圖。半導體結構20包括單晶基材22、包含單 晶材料的容納緩衝層2 4以及單晶組合物半導體材料層2 6。 在此上下文中,術語「單晶」應具有半導體產業内常用的 意義。術語「單晶」應代表屬於單晶或實質上屬於單晶的 材料,並且應包含具有相當少量缺陷(諸如矽或矽化鍺或混 合物之基材中常發現的位錯等等)的材料,以及半導體產業 中常發現之此類材料的磊晶層。 根據本發明一項具體實施例,結構20還包括位於基材22 與容納緩衝層24之間的非結晶中間層28。結構20還可包括 位於容納緩衝層與組合物半導體層26之間的模板層30。如 下文中詳細的説明,模板層有助於在容納緩衝層上開始生 長組合物半導體層。非結晶中間層有助於減緩容納緩衝層 應變,並藉此協助生長高結晶品質容納緩衝層。 根據本發明一項具體實施例,基材22是單晶矽晶圓,最 好是大尺寸單晶矽晶圓。晶圓可能屬於周期表第IV族材料 ,並且最好是第IVA族材料。第IV族半導體材料的範例包 -6- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 -----訂-------- 494450 A7 ___B7 _ 五、發明說明(4 ) (請先閱讀背面之注意事項再填寫本頁) 括矽、鍺、混合矽與鍺、混合矽與碳、混合矽、鍺與碳等 等。基材22最好是包含矽或鍺的晶圓,並且最好是如半導 體業產中使用的高品質單晶矽晶圓。容納缓衝層24最好是 基礎基材上磊晶生長的單晶氧化物或氮化物材料。根據本 發明一項具體實施例,非結晶中間層28係在基材22上生長 ,並位於基材22與生長的容納緩衝層之間,其方式是在生 長容納緩衝層24期間氧化基材22。非結晶中間層係用來減 緩由於基材與緩衝層間晶格常數差異而導致容納緩衝層可 能會發生的應變。在本文中,晶格常數代表在表面平面上 所測量之細胞原子間的距離。如果非結晶中間層未減缓此 類的應變,則應變會導致容納緩衝層中結晶結構中的缺陷 。接著,容納緩衝層中結晶結構中的缺陷將導致難以實現 单晶組合物半導體層2 6中的南品質結晶結構。 經濟部智慧財產局員工消費合作社印製 容納緩衝層24最好是選用與基礎基材結晶相容及與覆蓋 組合物半導體材料結晶相容的單晶氧化物或氮化物材料。 例如,此類的材料可能是具有與基材匹配且與後續供應的 半導體材料匹配之晶格結構的氧化物或氮化物。容納緩衝 層所適用的材料包括氧化金屬,諸如鹼土金屬鈦酸鹽、鹼 土金屬錘酸鹽、鹼土金屬給酸鹽、鹼土金屬妲酸鹽、鹼土 金屬釕酸鹽、鹼土金屬鈮酸鹽、鹼土金屬飢酸鹽、鹼土金 屬錫基 #5 鈥礦(alkaline earth metal tin_based perovskites) 、鑭鋁酸鹽、氧化鑭銃及氧化釓。另外,容納緩衝層也可 使用諸如氮化鎵、氮化鋁及氮化硼之類的氮化物。這些材 •料大部分是隔離體,雖然(例如)鳃、釕是導體。一般而言 -7- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 經濟部智慧財產局員工消費合作社印製 494450 A7 ___B7 _ 五、發明說明(5 ) ,這些材料是氧化金屬或氮化金屬,尤其,這些氧化金屬 •或氮化金屬包括至少兩個不同的金屬元素。在某些特定應 用中,氧化金屬或氮化金屬包括至少三個或三個以上不同 的金屬元素。 非結晶中間層28最好是藉由將基材22表面氧化所形成的 氧化物,尤其是由氧化矽所組成。非結晶中間層28的厚度 足以減缓因基材22與容納緩衝層24的晶格常數間不匹配所 導致的應變。通常,非結晶中間層2 8的厚度大約是0.5到5 毫微米(nm)。 可按照特定半導體結構的需求,從第ΠΙΑ與VA族元素 (III-V半導體組合物)、混合III-V組合物、第ΙΙ(Α與Β)與VIA 族元素(II-VI半導體組合物),以及混合II-VI組合物中選用 單晶組合物半導體層26的組合物半導體材料。範例包括砷 化鎵(GaAs)、砷化鎵銦(GalnAs)、砷化鎵鋁(GaAlAs)、磷 化銦(InP)、硫化鎘(CdS)、碲化鎘汞(CdHgTe)、硒化鋅(ZnSe) 、硒化鋅硫(ZnSSe)等等。適合的模板材料以化學方式键合 在容納緩衝層24表面上的選取部位,並提供後續組合物半 導體層26磊晶生長集結(nucleation)的部位。下文中將説明 適用於模板層30的材料。 圖2顯示根據本發明另一項具體實施例之半導體結構40 之一部分的斷面圖。結構40類似於前文説明的半導體結構 20,除了介於容納緩衝層24與單結構組合物半導體材料層 2 6間的額外緩衝層3 2以外。具體而言,額外缓衝層位於模 板層30與覆蓋組合物半導體材料層之間。當容納緩衝層無 -8- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------·
五、發明說明(6 法適當匹配覆蓋單晶組合物半導體材料層時,半導體或組 合物丰導體材料所形成的額外緩衝層係用來提供晶格補償 〇 下列非限制性、作例證的範例說明根據本發明各種替代 具體實施例之結構20與結構40中可用的各種材料組合。這 些完全是用來説明,並且本發明不限定於這些作例證的範 例〇 範例1 根據本發明一項具體實施例,單晶基材22係以(1〇〇)方向 爲目的之碎基材。矽基材可能是(例如)用來製造直徑大約 爲200到3 00 mm之互補金屬氧化物半導體(CM〇s)積體電路 中常用的矽基材。根據本發明的此項具體實施例,容納緩 衝層24是SrzBa^TiO3單晶層,其中z介於0到1範圍内,而 非結晶中間層是在介於矽基材與容納緩衝層間之界面上形 成的氧化石夕(SiOx)層。所選用的z値是爲了獲得緊密匹配對 應之後績形成層26之晶格常數的一個或一個以上晶格常數 。例如’容納緩衝層的厚度大約在2 nm到100 nm的範圍内 ,並且最好是大約10 nm的厚度。一般而言,希望容納緩衝 層的厚度足以隔離組合物半導體層與基材,以獲得所希望 的電子及光學特性。厚度低於100 nm的層通常提供較少的 額外優點,並增加不必要的成本;然而,若需要,可製造 較厚的層。氧化矽非結晶中間層厚度大約在〇·5 nm到5 nm 的範圍内’並且最好是大約1 5 nm到2.5 nm的厚度。 根據本發明的此項具體實施例,組合物半導體材料層26 -9- 本紙張尺度適用中國國家標準(CNS)A4規格(21〇 X 297公爱) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------. 經濟部智慧財產局員工消費合作社印製 494450 經濟部智慧財產局員工消費合作社印製 A7 _______B7____ 五、發明說明(7 ) .是砷化鎵(GaAs)或砷化鋁鎵(AiGaAs)層,其厚度大約是丄 nm到大約1〇〇微米(μπι),並且最好是大約〇.5 μηι到1〇 ^的 厚度。厚度通常視所準備之層的應用而定。爲了促進在單 晶氧化物上磊晶生長砷化鎵或砷化鋁鎵,將藉由覆蓋氧化 層來形成模板層。模板層最好是Ti-As、Sr-O-As、Sr-Ga-0 或Sr-A1 -Ο的1到10層單分子層(m〇n〇iayer)。藉由較佳範例 ,已證實Ti-As或Sr-Ga-Ο的1到2層單分子層可成功生長 GaAs 層0 範例2 根據本發明進一步具體實施例,單晶基材22是如上文所 述的梦基材。容納缓衝層24是立體或斜方晶相之鳃或鋇锆 酸鹽或铪的單晶氧化物,而非結晶中間層是在介於矽基材 與容納缓衝層間之界面上形成的氧化矽層。容納緩衝層的 厚度大約在2 nm到100 nm的範圍内,並且最好是至少5 nm 的厚度,以確保足夠的結晶及表面品質,並且是由單晶
SrZi:03、BaZr03 ' Si:Hf03、BaSn03 或 BaHf03所組成。例如 ,可在大約700度C的溫度下生長BaZr〇3單晶氧化層。所產 生心結晶氧化物的晶格結構呈現相對於基材矽晶格結構的 45度旋轉。 由這些鋇锆酸鹽或給材料所形成的容納缓衝層適合在磷 化銦(InP)系統中生長組合物半導體材料。組合物半導體材 料可旎疋(例如)厚度大約是1.〇 ηη^ 1〇 的磷化銦(Inp) 或砷化銦鎵(InGaAs)。適用於此結構的模板層是锆-砷 (Zi*-As)、锆-轉(Zr-Ρ)、铪·绅(Hf_As)、铪·、鐵一氧 _ -10- 本紙張尺度適用中國國家標準(CNS)A4規格⑵G x 297公爱) Μ--------IT--------- (請先閱讀背面之注意事項再填寫本頁) 494450 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(8 ) -石申(Sr-0-As)、銘-氧-轉(Sr-O-P)、鎖-氧-神(Ba-Q-As)、铜_ 鳃-氧(Ιη-Sr-O)或鋇-氧-磷(Ba-Ο-Ρ)的1到1〇層單分子層 (monolayer),並且最好是這些材料其中一個的1到2層單分 子層。藉由範例,就鋇錘酸鹽容納緩衝層而言,表面係以 結的1到2層單分子層終止,之後接著沈積碎的1到2層單分 子層,以形成Zr-As模板。然後,在模板層上生長以轉化銦 系統爲材料的組合物半導體材料的單晶層。所產生之組合 物半導體材料的晶格結構呈現相對於容納緩衝層晶格結構 的45度旋轉,並且不匹配(100) InP的晶格小於2 5%,並且 最好小於大約1.0%。 範例3 根據本發明進一步具體實施例,假設結構適合生長π_νι 材料磊晶膜,以覆蓋;?夕基材。如上文所述,基材最好是石夕 晶圓。適合的容納緩衝層材料是SrxBai xTi〇3,其中χ介於〇 到1範圍内’厚度大約在2 nm到100 nm的範園内,並且最好 是大約5 nm到15 nm的厚度。Π-VI組合物半導體材料可能是 (例如)鋅亞硒酸鹽(znSe)或鋅硫亞硒酸鹽(ZnSSe)。適用於 此材料系統的模板層包括鋅-氧(Zn-O)的1到1 〇層單分子層 ’心後接著過量的鋅的1到2層單分子層,之後接著位於表 面上的鋅亞涵酸鹽。或者,模板層可能是(例如)鐵_硫(Sr_s) ,之後接著ZnSeS。 範例4 ’發明的此項具體實施例是圖2所示之結構4 〇的範例。基 材22、單晶氧化層24及單晶組合物半導體材料層%可能類 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------
494450 A7 B7 經濟部智慧財產局員工消費合作社印制π 五、發明說明(9 似於範例1中所説明對應項。此外,額外緩衝層3 2係用來減 缓應變’其中應變是由於容納緩衝層晶格與單晶半導體材 料間不匹配所致。緩衝層32可能是砷磷化鎵(GaASxPix)或 磷化銦鎵(InyGai_yP)應變補償超晶格。在砷磷化鎵超晶格中 ,X値介於0到1範圍内,而在磷化銦鎵超晶格中,y値介於q 到1範圍内。藉由看情況來改變χ値或y値,晶格常數會隨之 橫跨超晶格從下到上變改,以產生基礎氧化物與覆蓋組合 物半導體材料之晶格常數間的匹配。超晶格的厚度大約在 50 nm到500 !^的範圍内,並且最好是大约2〇〇 1^到1〇〇 nm 的厚度。此結構的模板可能與範例1中説明的模板相同。或 者’緩衝層可能是厚度爲1 nm到5 〇 nm的的單晶錯,並且最 好是大約2 nm到20 nm的厚度。在使用鍺緩衝層的過程中, 可使用厚度大約一個單分子層的鍺·鳃(Ge_Sr)或鍺鈦 (Ge-Ti)的模板層。形成氧化層的方式是覆蓋單分子層翅或 單分子層鈥,以作爲後續沈積單晶鍺的集結部位。單分子 層銘或單分子層鈦提供第一單分子層鍺可鍵合的集結部位 〇 範例5 此範例還説明圖2所示之結構40中使用的材料。基材材料 22、容納緩衝層24及單晶組合物半導體材料層26及模板層 30可能與範例2中所説明對應項相同。此外,會在容納緩二 層與覆蓋單晶組合物半導體材料層之間插入緩衝層32。缓 衝層(進一步的單晶半導體材料)可能是(例如)砷化銦鎵 (InGaAs)的粒級層(graded layer),其中銦成份大約從〇到 (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------. -12- 494450
47%間變化。緩衝層的厚度最好大約是10到30 nm。將緩衝 層成份從GaAs變化成InGaAs,以提供基礎單晶氧化材料與 單晶組合物半導體材料覆蓋層間的晶格匹配。如果容納緩 衝層24與早晶組合物半導體材料層%間晶格不匹配,則此 類的緩衝層特別有利。 請重新參考圖1及2,基材22是諸如單晶矽基材之類的單 晶基材。單晶基材結晶結構的特徵在於晶格常數及晶格方 向。在類似的方法中,容納緩衝層24也是單晶材料,並且 單晶材料晶格的特徵在於晶格常數及晶體方向。容納緩衝 層與早晶基材的必須緊密匹配,或者,必須某一晶體方向 係對著另一晶體方向旋轉,才能達成實質上晶格常數匹配 。在此上下文中,「實質上等於」及「實質上匹配」表示 晶格常數間有充足的相似點,而能夠在基礎層上生長高品 質結晶層。 % 圖3顯示可達成之高結晶品質生長晶體層厚度的關係,作 爲主晶與生長晶的晶格常數之間不匹配的函數。曲線4)古 結晶品質財料的界限。曲線42右方的區域代表愈來貪晶格 匹配的多晶體,因此能夠在主晶上生長無限厚度、高品^ 蟲晶層。由於晶格常數不匹配遞增,所以可達成、高。^ 結晶層的厚度迅速遞減。例如,作爲參考點,如果主#與 生長層間的晶格常數不匹配超過大約2%,則無法達成#、尚 大約20 nm的單晶磊晶層。 根據本發明一項具體實施例,基材22是以(1〇〇)或(lii 爲方向的單晶矽晶圓,而容納緩衝層24是鳃鋇欽酸骑層 -13- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) f請先閱讀背面之注意事項再填寫本頁) 裝 ----訂------ 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 494450 A7 ___B7 _ 五、發明說明(11) 達成這兩種材料之晶格常數實質上匹配的方式爲,將鈥酸 鹽材料晶體方向往相對於矽基材晶圓晶體方向45°旋轉。在 此範例中,非結晶中間層24結構中所包含的氧化矽層係用 來降低鈦酸鹽單晶層應變,因爲鈦酸鹽單晶層應變會導致 主矽晶圓與生長鈦酸鹽層的晶格常數不匹配。結果,根據 本發明一項具體實施例,可達成高品質、更厚的單晶層鈦 酸鹽層。 請重新參考圖1及2,層26是磊晶生長單晶組合物半導體 •材料層,並且該結晶材料的特徵在於晶格常數及晶體方向 。爲了達成高結晶品質的磊晶生長層,容納緩衝層必須具 有高結晶品質。此外,爲了達成高結晶品質的層26,希望 主晶(在此情況下,主晶是單晶容納緩衝層)與生長晶體的 晶格常數之間實質上匹配。配合正確選用的材料,由於生 長晶體的晶體方向會相對於主晶方向旋轉,所以可達成晶 格常數實質上匹配。如果生長晶體是砷化鎵、砷化鋁鎵、 鋅亞硒酸鹽或鋅硫亞硒酸鹽,而容納緩衝層是單晶 SrxBa^TiOs,則可達成這兩種材料的晶格常數實質上匹配 ,其中會將生長層的晶體方向往相對於主單晶氧化物方向 旋轉45。。同樣地,如果主晶材料是鳃或鋇錘酸鹽或鳃或鋇 铪或鋇錫氧化物,而組合物半導體層是磷化銦或砷化鎵銦 或砷化鋁銦,則可達成晶格常數實質上匹配,其方式是將 生長晶體層的方向往相對於主氧化物晶體方向旋轉45%在 某些情況中,主晶氧化物與生長組合物半導體層之間的結 晶半導體緩衝層可用來降低生長單晶組合物半導體層的應 -14- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝 訂--------- 經濟部智慧財產局員工消費合作社印製 494450 A7 B7 _ 五、發明說明(12) 變,因爲應變會導致晶格常數的微幅差異。藉此可達成最 佳的生長單晶組合物半導體層結晶品質。 下文説明根據本發明一項具體實施例之製造諸如圖1與2 所示之結構之半導體結構的方法。方法的開始步驟是提供 一種包括矽或鍺的單晶半導體基材。根據本發明較佳具體 實施例,半導體晶基材是具有(100)方向的矽晶圓。基材最 好是以軸線爲方向,最多偏離軸線大約0.5°。半導體基材 的至少一部分具有裸面,然而基材的其他部分可能圍繞著 其他結構,如下文所述。在此上下文中,術語「裸」表示 已清除基材的部分表面,以去除氧化物、致污物或其他異 質材料。眾所皆知,裸矽具有高度反應性,並且很容易形 成天然氧化物。術語「裸」包含此類的天然氧化物。還可 能故意在半導體基材上生長薄型氧化矽,然而此類的生長 氧化物不是根據本發明之方法的必要項。爲了磊晶生長單 晶氧化層以覆蓋單晶基材,必須先去除天然氧化層,以暴 露基礎基材的結晶結構。下列的方法最好是藉由分子束磊 晶生長(molecular beam epitaxy ; MBE)方法來實現。藉由 先在MBE裝置中熱沈積薄型鳃層,以去除天然氧化物。然 .後,將基材加熱到大約750°C,使鳃與天然矽氧化層產生化 學反應。鳃係用來分解氧化矽,而留下無氧化矽表面。所 產生的表面包括總、氧及碎,並呈現整齊的2x 1結構。整齊 的2 X 1結構形成模板,用以有序生長單晶氧化物的覆蓋層。 模板提供必要的化學及物理特性,以集結結晶生長的覆蓋 層。 -15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------. A7
(請先閱讀背面之注意事項再填寫本頁) 裝--------訂----
-n ϋ I I i. A7
494450 五、發明說明(14) 覆盖單晶總鈥故鹽,以促進後續生長所希望的組合物半導 體材料磊晶層。就後續生長砷化鎵層而言,覆蓋MBE生長 的鳃鈦酸鹽單晶層的方式爲,以1到2層單分子層鈦、1到2 層單分子層鈦-氧或1到2層單分子層锶-氧來終止生長。在 形成此覆蓋層後’接著沈積砷,以形成Ti_As键合、Ti_0_As 鍵合或Sr-O-As。這些的任一種都可形成適合沈積及形成砷 化鎵單晶層的模板。在形成模板後,接著導入鎵,以與坤 產生化學反應,並形成砷化鎵。或者,可在覆蓋層上沈積 鎵,以形成Sr-0-Ga鍵合,並且導入與鎵反應的砷,以形成 GaAs 〇 藉由如上文所述的方法並加上額外緩衝層沈積步驟,即 可形成如圖2所示的結構。在沈積單晶組合物半導體層之前 ’會先形成覆蓋模板層的緩衝層。如果緩衝層是組合物半 導體超晶格,則可在如上文所述的模板上藉由(例如)MBE 來沈積此類的超晶格。如果用鍺層來取代緩衝層,則會修 改上述的方法,以最後的鳃層或鈦層來覆蓋鳃鈦酸鹽單晶 •層,然後藉由沈積鍺,以利於與鳃或鈦產生化學反應。然 後,可在此模板上直接沈積鍺緩衝層。 如上文所述的方法説明一種藉由分子束磊晶生長方法來 形成半導體結構的方法,其中該半導體結構包含一矽基材 、一單晶锶鈦酸鹽容納緩衝層及一單晶坤化鍺組合物半導 體層。然而,還可能藉由化學蒸汽化澱積(chemical vapor deposition ; CVD)、金屬有機化學蒸汽澱積(metal 〇rganic chemical vapor deposition ; MOCVD)、遷移率增強型磊晶 -17- 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公爱) -----------41^^--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制衣 494450 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(15) 生長(migration enhanced epitaxy ; MEE)、原子層羞晶生長 (atomic layer epitaxy ; ALE)等等來實現此項方法。另外, 藉由類似的方法,還可生長其他的單晶容納緩衝層,諸如 ,驗土金屬鈦酸鹽、鹼土金屬锆酸鹽、鹼土金屬給酸鹽、 鹼土金屬鈒酸鹽、鹼土金屬釩酸鹽、鹼土金屬釕酸鹽、鹼 土金屬說酸鹽、鹼土金屬錫基鈣鈦礦&1]^111^ earth metal tin-based perovskites)、鑭鋁酸鹽、氧化鑭銳及氧化釓。另 外’藉由諸如MBE的類似方法,還可沈積其他的第Η〗 —乂及 II-VI族單晶組合物半導體層,以覆蓋單晶氧化物容納緩衝 層0 組合物半導體材料與單晶氧化物容納緩衝層的每種變化 都是使用適當的模板層,以利於開始生長組合物半導體層 。例如,如果容納缓衝層是鹼土金屬锆酸鹽,則可藉由薄 型锆層來覆蓋氧化物。沈積錘之後,接著沈積要與锆產生 化學反應的坤或磷,作爲分別沈積神化錮鎵、绅化銦鋁或 磷化銦的前導。同樣地,如果單晶氧化物容納緩衝層是鹼 土金屬铪酸鹽’則可藉由薄型給層來覆蓋氧化層。沈積铪 之後,接著沈積要與給產生化學反應的砷或磷,作爲分別 生長砷化銦鎵、砷化銦鋁或磷化銦層的前導。在類似的方 法中,可用锶或鳃暨氧層來覆蓋锶鈦酸鹽,並且用鋇或鋇 暨氧層來覆蓋鋇鈦酸鹽。沈積前述各項之後,接著沈積要 與覆蓋材料產生化學反應的砷或磷,以形成用來沈積組合 物半導體材料層的模板,其中組合物半導體材料層包括绅 化銦鎵、砷化銦鋁或磷化銦層。 Μ,--------IT--------- (請先閱讀背面之注意事項再填寫本頁) -18- 494450 A7
經濟部智慧財產局員工消費合作社印製 示根據本發明進-步具體實施例之裝置結構50的 斷面圖。裝置結構50包括單晶半導體基材52,其最好是單 晶梦晶圓。單晶半導體基材52包括53及54兩個區域。虛線 56所指示的電子半導體組件通常是在區域53中形成。電子 組件56可能是電阻器、電容器、諸如二極體或電晶體之類 的王動式半導體組件,或者諸如互補金屬氧化物半導體 (CMOS)積體電路之類的積體電路。例如,電子半導體組件 56可能是CMOS積體電路,用來執行數位信號處理,或用來 執行相當適合矽積體電路的另一種功能。可藉由眾所皆知 且半導體產業中廣泛實施的傳統半導體處理來形成區域53 中的電子半導體組件。諸如二氧化矽層之類的隔離材料層 58可覆蓋電子半導體組件56。 區域54的表面上會移除半導體組件56處理期間在區域53 中形成或沈積的隔離材料58或任何其他層,以便在區域54 中提供裸矽表面。眾所皆知,裸矽表面具有高度反應性, 並且裸表面上可迅速形成天然氧化矽層。會在區域54表面 上的天然氧化物層上沈積鋇或鋇暨氧層,並且與氧化表面 產生化學反應,以形成第一模板層(圖中未顯示)。根據本 發明一項具體實施例,會藉由分子束磊晶生長方法來形成 單晶氧化物層60,以覆蓋模板層。在模板層上沈積包括鋇 、鈦暨氧的反應物,以形成單晶氧化物層。首先,於沈積 期間,將部分壓力之氧氣維持在接近與鋇及鈥完全反應所 須的最小限度,以形成早晶鎖敌酸鹽層60。然後,遞增部 分壓力之氧氣以提供氧氣過壓,並允許氧氣通常生長中的 -19- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) Μ.--------IT--------- (請先閱讀背面之注意事項再填寫本頁) 494450 A7 ---~--~__ 五、發明說明(17) 單晶氧化物層擴散。通過锶鈦酸鹽層擴散的氧氣會與位於 區域54表面上的矽產生化學反應,用以在第二區域上形成 氧化梦非結晶層62,非結晶層62位於矽基材與單晶氧化物 .之間的界面。 根據本發明一項具體實施例,終止沈積單晶氧化物層60 的方式是沈積第二模板層64,該第二模板層64可能是1到10 層單分子層鈦、鋇、鋇暨氧或鈦暨氧。然後,藉由分子束 慕晶生長方法來沈積單晶組合物半導體材料層66,以覆蓋 第二模板層。沈積層66的第一步驟是在模板層上沈積砷層 。第一步驟之後,接著沈積鎵及砷,以形成單晶砷化鎵。 或者,在上面的範例中,可用鳃來取代鋇。 根據本發明進一步具體實施例,通常會在組合物半導體 層66上形成虛線68所指示的半導體組件。可藉由製造砷化 鎵或其他第III-V族組合物半導體材料裝置中使用的傳統處 •理步驟來形成半導體組件68。半導體組件68可能是任何的 主動型或被動型組件,並且最好是利用組合物半導體材料 物理特性的半導體雷射、發光二極體、光檢測器、異質結 雙極性電晶體(heterojunction bipolar transistor ; HBT)、高 頻MESFET或其他的組件。可形成線條70所指示的金屬導體 ,以利於電子耦合裝置68及裝置56,以此方式建置積體電 路,該積體電路包括至少矽基材中形成的一個組件及單晶 組合物半導體材料層中形成的一個裝置。雖然已説明之作 爲例證的結構50是在矽基材52上形成的結構,並且具有鋇( 或鳃)鈦酸鹽層60及砷化鎵層66,但是可使用本發表中他處 -20- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝—— 訂---------AW. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 494450 A7 B7 _ 五、發明說明(13) 所説明的其他基材、單晶氧化層及其他組合物半導體層來 製造類似的裝置。 圖5顯示根據本發明另一項具體實施例之半導體結構72 的圖式。結構72包括單晶半導體基材74,諸如包含區域75 及區域76的單晶矽晶圓。將使用半導體產業中常用的傳統 矽裝置處理技術,在區域75中形成虛線78所指示的電子組 件。使用類似於如上文所述的方法步驟,來形成單晶氧化 層80及中間非結晶氧化矽層82,以覆蓋基材74的區域76。 接著形成模板層84及其後的單晶半導體層86,以覆蓋單晶 氧化物層80。根據本發明進一步具體實施例,藉由類似於 形成層80的方法步驟來形成額外單晶氧化物層88,以覆蓋 層8 6,並且,藉由類似於形成層8 6的方法步骤來形成額外 單晶半導體層90,以覆蓋單晶氧化物層88。根據本發明一 項具體實施例,會從組合物半導體材料來形成層86及90的 至少其中一層。 通常會在單晶半導體層86的至少一部分上形成虛線92所 指示的半導體部分。根據本發明一項具體實施例,半導體 組件92可包含場效電晶體,在某種程度上,該場效電晶體 的閘電介質係由單晶氧化物層88所形。此外,可使用單晶 半導體層92來建置該場效電晶體的閘電極。根據本發明一 項具體實施例,會從第III-V族組合物來形成單晶半導體層 86,並且半導體組件92是利用第III-V族組合物材料物理特 性的射頻(RF)放大器。根據本發明更進一步具體實施例, 線條94所指示的電子交接以電子方式交接組件78及組件92 -21- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------^裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494450 A7 B7 五、發明說明(19) 。以此方式,結構72集成利用兩種單晶半導體材料唯一特 {生的組件。 藉由更多的特定範例,圖6到18顯示其他的積體電路及系 統。圖6顯示用以説明通信裝置100之一部分的簡化方塊圖 ,該通信裝置100具有信號收發裝置101、積體電路102、輸 出單元103及輸入單元104。信號收發裝置的範例包括天線 、數據機或任何其他的裝置,這些裝置可用來將資訊或資 料傳送至或自外部裝置。在本文中,收發功能係用來表示 可能只能夠傳輸、只能夠接收或可接收暨傳輸信號至通信 裝置或來自於通信裝置之信號的信號收發裝置。輸出單元 103可包括顯示器、監視器、揚聲器等等。輸入單元104可 包括麥克風、键盤等等。請注意,在替代具體實施例中, 可用諸如記憶體等等的單一單元來取代輸出單元103及輸 _入單元104。記憶體可包括隨機存取記憶體或非揮發性記憶 體,諸如硬碟、快閃記憶卡或模組等等。 積體電路通常是連續基材上或内不能分離組合的至少兩 個電路元件(例如,電晶體、二極體、電阻器、電容器等等 )的組合。積體電路102包括組合物半導體部分1022、雙極 性部分1024及金屬氧化物半導體(1^08)部分1〇26。組合物 半導體部分1022包括組合物半導體材料内至少部分形成的 電子組件。組合物半導體部分10 2 2内的電晶體及其他電子 組件能夠處理至少大約0.8 GHz的射頻信號。在其他具體實 施例,信號可能是較低或較高的頻率。例如,在諸如砷化 銦鎵之類的某些材料能夠處理大約27 GHz的射頻信號。 -22- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------· 經濟部智慧財產局員工消費合作社印製 494450 A7 B7 _ 五、發明說明(20) 組合物半導體部分1022進一步包括雙工器10222、射頻轉 •基頻帶轉換器10224 (解調變裝置或解調變電路)、基頻帶轉 射頻轉換器10226 (調變裝置或調變電路)、功率放大器 10228及隔離體10229。雙極性部分1024及MOS部分1026通 常係以IV族半導體材料所形成。雙極性部分1024包括接收 放大器10242、類比到數位轉換器10244、數位到類比轉換 器10246及傳輸放大器10248。MOS部分1026包括數位信號 處理裝置10262。此類裝置的範例包括市場上通常可購買到 的 DSP核心,諸如 Motorola DSP 566xx (Motorola,Incorporated of Schaumburg,Illinois銷售)及 Texas Instruments TMS 320C54x (Texas Instruments of Dallas,Texas销售)系列數位信號處理 器。數位信號處理裝置10262通常包括互補金屬氧化物半導 •體(CMOS)電晶體及類比到數位暨數位到類比轉換器。顯然 地,積體電路102中會出現其他的電子組件。 在某一操作模式中,通信裝置100自天線接收信號,其中 天線屬於信號收發裝置10 1的一部分。信號通過雙工器 10227傳送到射頻轉基頻帶轉換器10224。類比資料或其他 資訊經過接收放大器10224放大後,即傳輸到數位信號處理 裝置10262。數位信號處理裝置10262處理資訊或其他資料 後,將經過處理的資訊或其他資料傳輸到輸出單元1〇3。如 果通信裝置是傳呼機,則輸出單元可能是顯示器。如果通 信裝置是行動電話,則輸出單元103可包含揚聲器、顯示器 或兩項皆有。 通信裝置100可將資料或其他資訊進相反方向傳送。資料 -23- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------裝--------訂—-------- (請先閱讀背面之注意事項再填寫本頁)
494450 五、發明說明(21) 或其他資訊將通過輸入單元104。在行動電話中,輸入單元 104可包括麥克風或键盤。然後,會使用數位信號處理裝置 10262來處理資訊或其他資料。經過處理後,然後使用數位 到類比轉換器1〇246來轉換信號。傳輸放大器1〇248負責放 大已轉換的信號。已放大的信號經過基頻帶轉射頻轉換器 10226調變後,由功率放大器10228負責進一步放大。已放 大的射頻信號通過隔離體1〇229及雙工器ι〇222傳送到天線 〇 通k裝置100的先前技藝具體實施例將具有至少兩個分 開的積體電路:其中-個是組合物半導體部分則,而另 -個是MOS部分1〇26。雙極性部分1〇24可能位於與M〇s部 分1〇26相同的積體電路上,或可能位於另-個積體電路上 。現在,運用本發明具體實施例,可在單一積體電路内形 成這三個部分。因爲所有的電晶體都可駐存於單一積體電 路上所以可大幅小型化通信裝置,纟且更方便攜信 裝置。 現在,將况明如圖7到工丄所示之一種用以形成示範性積體 電路102部分的方法。於圖7中,所提供的p型摻雜式單晶石夕 基材i 1 〇具有,组合物半導體部分i 〇 2 2、冑極性部分i 〇 2 4及 则邵分1G26。在雙極性部分内掺雜單晶碎基材,以形成 N埋置區域1102。然後’在埋置區域ιι〇2與基材η。上面形 成輕微p型摻雜式羞晶單晶⑦層i 1G4。然後,實行摻雜步驟 ,以便在N+埋置區域11〇2上產生輕微n型摻雜式漂移區⑴7 。接雜步縣雙極性區域觀部分内的輕微pM晶層的接 (請先閱讀背面之注意事項再填寫本頁) 裝 — — — — — — — — — . 經濟部智慧財產局員工消費合作社印製 -24- ^4450
經濟部智慧財產局員工消費合作社印製 4物類型轉換成輕微η型單晶矽區域。然後,在雙極性部分 1024與MOS部分1026間形成場隔離區域i 1〇6。在M〇s部分 i〇26内的磊晶層11〇4部分上形成閘電介質層i丨1〇,然後, 在閘電介質層liio上形成閘電極i〗12。沿著閘電極1112與 閘電介質層1 1 1 0的垂直面形成側壁間隔丨丨丨5。 將p型掺雜物導入漂移區域丨丨i 7,以形成活性或本質基極 區域1114。然後,在雙極性部分1〇24内形成11型、深層集電 極區域1108,以允許電子連接到埋置區域11〇2。實行可有 選擇性η型摻雜,以形成矿摻雜區域1116及發射極區域ιΐ2〇 。Ν +摻雜區域1116係在沿著閘電極1112鄰接側的層11〇4内 形成,並且是MOS電晶體的源極、汲極或源/汲極區域。Ν + 摻雜區域1116及發射極區域1120的摻雜濃度爲每立方公分 至少1Ε19個原子,以允許形成歐姆接觸點。形成ρ型摻雜區 域,以建亙Ρ +摻雜區域的非活性或非本質基極區域〗丨丨8 ( 掺雜濃度爲每立方公分至少1E19個原子)。 在所説明的具體實施例中,已實行數項處理步驟,但是 有一些步躁無圖解或進一步説明,諸如形成井區域、門限 調整植入、通道穿通阻植入、場穿通阻植入及各種遮罩層 。到目前爲止,方法中使用傳統步驟來形成裝置。如上文 所述,MOS區域1026内已形成標準N通道MOS電晶體,並 且雙極性部分1024内已形成垂直式NPN雙極性電晶體。到 目前爲止,組合物半導體部分1022内尚未形成任何電路元 件。 現在,從組合物半導體部分1022的表面移除於積體電路 -25- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 裝--------訂---------%· (請先閱讀背面之注音?事項再填寫本頁) 494450 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(23 ) <雙極性及MOS部分方法期間已形成的所有層。以此方式 提供裸矽表面,以利於進行部分的後續處理,例如,用: 上文所述的方法。 然後,在基材1 1 〇上形成容納緩衝層i 24,如圖8所示。所 形成的客納緩衝層將作爲部分i022中適當準備之裸矽表面 上的單晶層。然而,在部分1024及1026上形成的層124部分 可能是多晶體或非結晶,這是因爲這是在非單晶材料上形 成’因此’不會集結單晶生長所致。容納緩衝層1 24通常是 單晶氧化金屬或氮化金屬層,並且其厚度大約在2 nm到1〇〇 毫微米(nm)的範圍内。在一項特定具體實施例中,容納缓 衝層厚度大約是5到15 nm。於形成容納緩衝層期間,會沿 著積體電路102最上面的矽表面上形成非結晶中間層122。 非結晶中間層122通常包括氧化矽,並且其厚度大約是丨到5 nm。在一項特定具體實施例中,非結晶中間層厚度大約是 2 nm。在形成容納缓衝層124及非結晶中間層122後,然後 形成模板層126,模板層的厚度大約在材料的1到丨〇層單分 子層範圍内。在一項特定具體實施例中,材料包括鈦-砷、 銳-氧-坤,或是如上文參考圖1到5所述的其他類似材料。 然後,磊晶生長單晶組合物半導體材料層13 2,以覆蓋容 納緩衝層124的單晶部分,如圖9所示。在非單晶層124部分 上生長的層13 2部分可能是多晶體或非結晶。可藉由數種方 式來形成早晶組合物半導體層,並且通常包括諸如珅化嫁 、砷化銦鋁、磷化銦或如上文所述的其他組合物半導體材 料。層的厚度大約在1 nm到5,000 nm的範圍内,益且最好 •26- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 494450 A7 _________B7 —__ 五、發明說明(24) "~^ ~ 是大、100 nm到500 nm的厚度。在此項特定具體實施例中 ,模板層内的每個元件也會出現在容納緩衝層124、單晶组 合物半導體材料132,或兩者中。因此,於處理期間,模板 2 126與其兩層緊鄰層之間輪廓消失。因此,當拍攝透射式 電子顯微鏡(transmission electr〇n micr〇sc〇py; TEM)照片 時,可能看到介於容納緩衝層124與單晶組合物半導體材料 層13 2間的界面。 此時,將移除位於覆蓋雙極性部分1〇24與%〇3部分1〇26 之部分的組合物半導體層132及容納緩衝層124的區段,如 •圖10所示。移除此區段後,接著在基材110上形成隔離層142 二隔離層142可包含一些材料,諸如,氧化物、氮化物、氮 氧化物、低k電介質等等。在本文中,低]^是具有低於大约 J.5電介質常數的材料。沈積隔離層142後,接著拋光、移 除覆蓋單晶组合物半導體層132的隔離層142部分。 然後,在單晶組合物半導體部分1〇22内形成電晶體144 。然後,在單晶組合物半導體層132内形成閘電極148。然 後,在單晶組合物半導體層132内形成摻雜區域146。在此 項具體實施例中,電晶體144,是金屬半導體場效電晶體 (meial_semiconductor field_effect transist〇r ; mesfet)。如 果MESFET是η型MESFET,則摻雜區域146及單晶組合物半 .導體層132也是η型摻雜式。如果要形成p型MESFET,則摻 4區域146及單晶組合物半導體層132是相反的掺雜型。重 接4 (N )區域14 6允终製作單晶組合物半導體層部分13 2的 歐姆接觸點。此類,已形成積體電路内的主動裝置。此項 •27- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) .裝--------訂--------- 經濟部智慧財產局員工消費合作社印剩衣 經濟部智慧財產局員工消費合作社印製 494450 A7 __B7 _ 五、發明說明(25) 特定具體實施例包括η型MESFET、垂直式NPN雙極性電晶 體及平面Ν通道MOS電晶體。可使用許多其他類型的電晶 體,包括Ρ通道MOS電晶體、ρ型垂直式雙極性電晶體、ρ 型MESFET及垂直式暨平面電晶體的組合。再次,一個或一 個以上的部分1022、1024及1026中可形成其他的電子組件 ,諸如電阻器、電容器、二極體等等。 繼續處理,以形成實質上完整的積體電路102,如圖11 所示。在基材110上形成隔離層152。隔離層152可包括蝕刻 終止或拋光終止區域,圖11中未顯示。然後,在第一隔離 層152上形成第二隔離層154。移除層154、152、142、124 及122部分,以確定接觸點開孔的界限,用以交接裝置。在 隔離層154内形成交接溝槽,以提供接觸點間的橫向連接。 如圖11所示,交接1562將部分1022内的η型MESFET源極或 汲極區域連接到雙極性部分1024内之NPN電晶體的深層集 電極區域1108。將NPN電晶體的發射極區域1120連接到 MOS部分1026内之N通道MOS電晶體之摻雜區域1116的其 中一區。將其他的摻雜區域1116電子連接到圖中未顯示之 積體電路的其他部分。 在交接1562、1564暨1566及隔離層154上形成鈍化層156 •。製作如圖所示之電晶體的其他連接,並製作積體電路1〇2 内其他的電氣或電子組件,但圖中未顯示。另外,若需要 ,可形成額外隔離層及交接,以形成積體電路内各種組 件間的適當交接。
從前面的具體實施例可得知,可將組合物半導體及第IV '\ -28- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) -----------^--------^--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 494450 A7 B7 ___ 五、發明說明(26 ) 半導體材料的主動裝置集成到單一積體電路中。因爲在同 一積體電路内併入雙極性電晶體及MOS電晶體存在一些困 難,所以可將雙極性部分内的某些組件移到組合物半導體 部分1022或MOS部分1024中。具體而言,請重新參考圖6 所示的具體實施例,可將放大器10248及10242移到組合物 半導體部分1022中,而將轉換器10244及10246移到MOS部 分1026中。因此,需要特殊的製造步驟,以排除雙極性電 晶體。因此,積體電路内只有組合物半導體部分及MOS部 分。 在還有另一項具體實施例中,可形成一種積體電路,該 積體電路包含位於組合物半導體部分中的光雷射,以及光 交接(波導),以連接到同一積體電路之第IV族半導體區域 内的MOS部分。圖12到18顯示一項具體實施例的圖式。 圖12顯示包括單晶矽晶圓161之積體電路160—部分的斷 面圖。晶圓161上已形成非結晶中間層162及容納緩衝層164 ,類似於上文所述。在此項特定具體實施例中,會先形成 要形成光雷射所需的層,之後形成要形成MOS電晶體所需 的層。在圖12中,上半部鏡射層166包含組合物半導體材料 •的間隔層。例如,光雷射内的第一、第三及第五膜可包含 諸如砷化鎵之類的材料,而下半部鏡射層166内的第二、第 四及第六膜可包含砷化鋁鎵,反之亦然。層168包含用來產 生光子的活性區域。形成上半部鏡射層17〇的方法類似於形 成下半部鏡射層166的方法,並且包含組合物半導體材料的 間隔膜。在一項特定具體實施例中,上半部鏡射層170可能 -29- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- 494450 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明(27) 是P型掺雜組合物半導體材料,而下半部鏡射層166可能是n 型摻雜組合物半導體材料。 在上半部鏡射層170上形成另—層容納缓衝層172,其類 似於容納緩衝層164。在一項替代具體實施例中,容納缓衝 層164及172可能包含不同的材料。然而,容納緩衝層164 及1 72的功能實質上相同,因爲都是用來製作組合物半導體 層與單晶第iv族半導體層間的轉換。在容納緩衝層172上形 成單晶第IV族半導體層174。在一項特定具體實施例中,單 晶第IV族半導體層i74包含鍺、矽鍺、碳化矽鍺等等。 在圖13中,將處理MOS部分,以形成位於此上半部單晶 第IV族半導體層174内的電子組件。如圖13所示,從層174 的部分形成場隔離區域171。層174上形成閘電介質層173 ,在閘電介質層173上形閘電極175。摻雜區域177是電晶體 181的源極、汲極或源/汲極區域,如圖所示。在鄰接閘電 極175的垂直面形成側壁間隔179。可在層174的至少一部分 内製作其他的組件。這些其他的組件包括其他的電晶體0 通道或p通道)、電容器、電晶體、二極體等等。 在摻雜區域177的其中一區上磊晶生長單晶第IV族半導 體1。上半部分184是P +摻雜,而下半部分182實質上維持 本質(未摻雜),如圖13所示。可使用選擇性磊晶方法式形 成咸層。在一項具體實施例中,在電晶體i 8丨及場隔離區域 17 1上形成隔離層(圖中未顯示)。製作隔離層的圖樣,以確 疋用來暴露摻雜區域177之其中一區的開孔界限。至少一開 士口先形成不含摻雜物的選擇性系晶層。整個選擇性系晶
ffl t @ s ^ (2i〇;^TST (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- A7
請 先 閱 讀 背 面 之 注 意 事 項 再 填 寫 本 頁 訂
494450 A7 -—~_____ 五、發明說明(29) —' 材,202上形成硬遮罩層咖。移除覆蓋開孔到接近圖η倒 邊範圍之部分上的硬遮罩層204部分及較高折射率材料2〇2 〇 /几成作爲光交接之光波導形成的平衡,如圖17所示。執 仃沈積私序(可能是沈積·蝕刻方法),以有效建立側壁區段 .212。在此項具體實施例,製成側壁區段212所使用的材料 與材料202相同。然後,移除硬遮罩層2〇4,並在較高折射 率材料212及202上形成較低折射率材料214㈠目對於材料 202及層2 12的低折射率),並暴露隔離層19〇的部分。圖η 中的虛線描繪出較高折射率材料2 12及2〇2間的邊界。此項 命名疋用來識別以相同材料所製成,但在不同時間形成。 繼續處理,以形成實質上完整的積體電路,如圖18所示 。然後,在光雷射180及MOSFET電晶體181上形成鈍化層 220。雖然圖中未顯示,但是可在積體電路内製作其他的電 子或光學連接,而圖18中未顯示。這些連接可包括其他的 光波導或可包括金屬交接。 在其他具體實施例中,可形成其他類型的雷射。例如, 另一種雷射類型可放射水平光(光子),而不是放射垂直光 。如果放射水平光,則可在基材161内形成MOSFET電晶體 ’並將重新配置光波導,使雷射能夠適當耦合(光連接)到 電晶體。在一項特定具體實施例中,光波導可包括容納緩 衝層的至少一部分。可能使用其他的組態配置。 顯然地,這些具有組合物半導體部分及第IV族半導體部 分的積體電路具體實施例都是用來解説本發明具體實施例 -32- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公爱) ----- (請先閱讀背面之注意事項再填寫本頁) -丨裝
----^ ------II 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明(3〇) ’而不是用來限制本發明。尚有其他組合的多樣性及本發 :的其他具體實施例。例如,組合物半導體部分可包括發 一極光榀測斋、二極體等等,而第IV族半導體可包 括數位邏輯、《憶體陣列以及可在傳統積體電路上形 士的大4刀、、’σ構。ϋ由運用本發明的具體實施例,現在更 谷易口併適合用組合物半導體材料運作的裝置與適合用第 IV狹半導體材料運作的其他組件。如此可縮小裝置、降低 製造成本並增加良率及可靠度。 雖;、、:未説明,但疋在晶圓上只形成組合物半導體電子詛 件的過程巾,可使用單晶第IV族晶圓。在此方法中,晶圓 實質上是在i造用I覆蓋晶圓之單晶组合物半導體層内的 組合物半導體電子組件的期間所使用的「處理」晶圓。因 此,可在直徑至少約200毫米且可能是至少約3〇〇毫米之晶 圓上的第III-V或II-VI族半導體材料内形成電子組件。 藉由使用此類型基材,相當低價的「處理」晶圓克服组 合物半導體晶圓的易碎性質,其方式是將此類晶圓放置在 相對更耐用且容易製造的基礎材料上。因此,可形成一種 積體電路,以便能夠在組合物半導體材料内形成所有的電 子组件,尤其是所有的主動式電子组件,即使基材本可包 括第IV族半導體材料。與相對小型且更易碎、傳統的組合 物半導體晶圓相比,因爲能夠以更經濟且更容易的方式來 處理大型基材,所以可降低組合物半導體裝置的製造成本 0 於前面的説明書中,已參考特定具體實施例來説明本發 -33- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂-----— 經濟部智慧財產局員工消費合作社印製 494450 A7 --—-*- 五、發明說明(31) '" =。然而,熟知技藝人士應明白本發明的各種修改並且容 易修改,而+會脱離如下文中申料利範例所提供之本發 明的範田壽與精神。因此,説明書暨附圖應視爲解説,而^ 應視爲限制,並且所有此類的修改皆屬本發明範疇内。 已說明關於特定具體實施例的優勢、其他優點及問題解 決万案。但是,可導致任何優勢、優點及解決方案發生或 更顯著的優勢、優點、問題解決方案及任何元件不應被理 解爲任何或所有申請專利範例的關鍵、必要項或基本功能 或元件。本文中所使用的術語「包括」、「包含」或其任 何其他的變化都是用來涵蓋非專有内含項,使得包括元件 清單的方法、方法、物品或裝置不僅包括這些元件,而且 還包括未明確列出或此類方法、方法、物品或裝置原有的 其他元件。 f請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -34- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 、申請專利範 經濟部智慧財產局員工消費合作社印製 :種包含-積體電路的通信裝置,其中該積體電路包括 一容納緩衝層; 全、且a物半導體部分,以覆蓋該容納緩衝層,其中該 =合物半導體部分包括—選自由—放大器、-調變電路 解調變電路所組成之群組的特徵;以及 一第IV族半導體部分,其包含一耦合該特徵的數位邏 科°卩分。 2 申明專利範圍第1項之通信裝置,其中該組合物半導 體部分之晶體方向係相對於該容納緩衝層之晶體方向 旋轉45。。 3 •如申請專利範圍第2項之通信裝置,其中: 該積體電路進一步包括一單晶第IV族基材,該單晶第 1乂族基材位於該組合物半導體部分下;以及 該容納緩衝層之晶體方向係相對於該單晶第IV族基 材之晶體方向旋轉4 5。。 4·如申請專利範圍第3項之通信裝置,其中該容納緩衝層 及"亥組合物半導體部分之間的晶格不匹配不會大於約 2·〇% ’並且該組合物半導體部分的厚度至少約2〇 ^瓜。 5·如申請專利範圍第1項之通信裝置,其中該積體電路具 有一選自由下列所組成之群組的特徵: 該容納緩衝層之晶體方向係相對於該組合物半導體 部分之晶體方向旋轉45。;以及 该容納緩衝層殳該組合物半導體部分之間的晶格不 _ -35- 本紙張尺度適用中國國家標準(αίϋΓ規格(210 χ 297公爱 ·裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) ^4450 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 ‘申請專利範圍 匹配不會大於約2.0%,並且該組合物半導體部分的厚产 至少約20 nm。 又 6.如申請專利範圍第1項之通信裝置,其中該積體電路進 一步包括一單晶第IV族基材,該單晶第IV族基材位於該 單晶組合物半導體部分下,其中·· 該容納緩衝層之晶體方向係相對於該單晶第IV族基 材之晶體方向旋轉45。;以及 土 該容納緩衝層及該組合物半導體部分之間的晶格不 匹配不會大於約2·0%,並且該組合物半導體部分的厚度 至少約20 nm。 7·如申請專利範圍第i項之通信裝置,其中該容納緩衝層 及該組合物半導體部分之間的晶格不匹配不會大於約 2.0% ’並且該組合物半導體部分的厚度至少約2〇 。 8· —種通信裝置,包括·· 一信號收發裝置; 一積體電路,包括: 一組合物半導體部分,其具有一耦合到該信號收發裝 置的放大器; 一第IV族半導體部分,其具有一耦合到該放大器的數 位信號處理裝置;以及 一耦合到該積體電路的單元。 9.如申叫專利範圍第8項之通信裝置,其中該通信裝置包 括一行動電話。 10·如申印專利範圍第8項之通信裝置,其中該通信裝置為 ---------------------訂---------線 (請先閱讀背面之注意事項再填寫本頁}297公釐) §88
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