WO2021017501A1 - 一种显示面板及其制备方法和显示装置 - Google Patents
一种显示面板及其制备方法和显示装置 Download PDFInfo
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- WO2021017501A1 WO2021017501A1 PCT/CN2020/081524 CN2020081524W WO2021017501A1 WO 2021017501 A1 WO2021017501 A1 WO 2021017501A1 CN 2020081524 W CN2020081524 W CN 2020081524W WO 2021017501 A1 WO2021017501 A1 WO 2021017501A1
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- layer
- partition
- groove
- partition groove
- display panel
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- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000005192 partition Methods 0.000 claims abstract description 259
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000011368 organic material Substances 0.000 claims abstract description 56
- 238000005538 encapsulation Methods 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 376
- 239000000758 substrate Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 49
- 238000002955 isolation Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 239000012044 organic layer Substances 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 abstract description 15
- 239000001301 oxygen Substances 0.000 abstract description 15
- 238000004806 packaging method and process Methods 0.000 description 23
- 239000010408 film Substances 0.000 description 19
- 239000003990 capacitor Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 229910010272 inorganic material Inorganic materials 0.000 description 5
- 239000011147 inorganic material Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
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- 239000004332 silver Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
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- 231100000719 pollutant Toxicity 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 229910052749 magnesium Inorganic materials 0.000 description 1
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- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
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- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
Definitions
- This application belongs to the technical field of display devices, and specifically relates to a display panel, a manufacturing method thereof, and a display device.
- mounting holes are generally set in the display area of the display device (such as mobile phones), and functional components such as cameras, sensors, or earpieces are placed in the mounting holes, but the mounting holes are set in the display area, which causes packaging failure The risk, which in turn affects the display effect of the display panel.
- the technical problem to be solved by the present application is to provide mounting holes in the display area of the display panel, and there is a risk of package failure, which further affects the display effect of the display panel, and further provides a display panel, a manufacturing method thereof, and a display device .
- a display panel of the present application includes: a substrate including a display area, an opening area located in the display area, and a partition area surrounding the opening area; the partition area is at least provided There is a partition ring arranged around the opening area, and at least one side of the partition ring is provided with a partition groove,
- the partition groove includes a third partition groove, a first partition groove, and a second partition groove that are located on a side away from the substrate, and the third partition groove, the first partition groove, and the second partition groove communicate with each other ,
- the first partition groove is used to partition the organic material layer on the sidewall of the second partition groove and the third partition groove.
- a display device includes the above-mentioned display panel.
- a method for manufacturing a display panel includes the following steps:
- the substrate including a display area, an opening area located in the display area, and a partition area surrounding the opening area;
- An array structure layer is formed on the substrate, and at least two metal sacrificial layers spaced apart in a direction parallel to the substrate are preset in the partition area, and are formed between adjacent metal sacrificial layers The second partition hole, so that the metal sacrificial layer is exposed on the sidewall of the second partition hole;
- An organic material layer is formed on the array structure layer and in the isolation groove, and the organic material layer is disconnected at the removed metal sacrificial layer.
- the display panel includes a substrate, the substrate includes a display area, an opening area located in the display area, and a partition area surrounding the opening area; the partition area is provided with at least one partition ring, A partition groove is provided on at least one side of the partition ring.
- the partition groove includes a first partition groove close to the substrate and a second partition groove far away from the substrate.
- the first partition groove is used to partition the organic material layer; the bottom of the first partition groove
- the material of is the same material as the material of the encapsulation layer covering the partition groove and contacting the bottom of the groove.
- the organic material layer is separated by providing a partition groove, and the material at the bottom of the first partition groove and the material of the encapsulation layer covering the partition groove and contacting the bottom of the groove are of the same type. Separate the organic material layer to improve the encapsulation effect. On the other hand, it improves the adhesion of the film layer, so that the inorganic film layer in the encapsulation layer and the inorganic film layer of the array structure layer are tightly combined to further enhance the encapsulation effect and avoid external water and oxygen from the open area Enter into the organic material layer in the display area to improve the packaging effect, service life and display effect of the display panel.
- Figure 1 is a schematic diagram of the structure of the display panel in this application.
- FIG. 2 is a schematic structural diagram of a display panel without openings in this application;
- FIG. 3 is a schematic diagram of the structure of the display panel with holes in FIG. 2;
- FIG. 4 is a schematic diagram of a structure of a display panel without openings in this application.
- FIG. 5 is a schematic diagram of a structure of the display panel with holes in FIG. 4;
- FIG. 6 is a schematic diagram of a structure of a display panel with holes in this application.
- FIG. 7 is a schematic diagram of a structure of a display panel with holes in this application.
- FIG. 8 is a flowchart of a method for manufacturing a display panel in this application.
- 9a-9e are structural schematic diagrams of the manufacturing process of the display panel in this application.
- mounting holes are generally set in the display area of the display device (such as mobile phones), and functional components such as cameras, sensors, or earpieces are placed in the mounting holes, but the mounting holes are set in the display area, which causes packaging failure The risk, which in turn affects the display effect of the display panel.
- the main reason is that after installing the mounting hole in the display area, the organic material layer on the side wall of the mounting hole is exposed, and the exposed part of the organic material layer is more likely to be invaded by water and oxygen.
- planarization layer, insulating layer, hole injection layer, hole transport layer, organic light emitting layer, electron transport layer, electron injection layer or cathode layer and other organic material layers form a channel for water and oxygen to enter the display area, causing the packaging of the display area to fail , Affecting the display effect of the display panel.
- the present application provides a display panel, a manufacturing method thereof, and a display device.
- the inventors cut off the passage of water and oxygen intrusion by separating the organic material layer around the mounting hole, and can solve the above technical problems. Prevent the packaging failure of the display area and ensure the display effect of the display panel.
- the display panel 100 provided by the present application includes: a display area 101, an opening area 102 located in the display area 101, and a partition area 103 surrounding the opening area 102, wherein the opening area 102 is A mounting hole is provided, and the mounting hole is used to install functional elements such as a camera, a sensor or an earpiece, so as to increase the screen-to-body ratio and improve the visual enjoyment of the viewer.
- the display panel 100 includes a substrate 1.
- the display panel includes a display area 101, an opening area 102 located in the display area 101, and a partition area 103 surrounding the opening area 102.
- the partition area 103 is provided with at least one partition ring 113, and at least one side of the partition ring 113 is provided with a partition groove 123, the partition groove includes a third partition groove 1233, a first interconnecting groove located on the side away from the substrate surface.
- the partition grooves 1231 and the second partition grooves 1232 as shown in FIG.
- the third partition grooves 1233, the first partition grooves 1231 and the second partition grooves 1232 are arranged in sequence along a surface away from the substrate, and the third partition The groove 1233 is located close to the substrate, the first partition groove 1231 is located on the side of the third partition groove 1233 away from the substrate, and the second partition groove 1232 is located at the first partition groove 1231 away from the substrate.
- the third partition groove 1233 is provided on one side and at the uppermost position.
- the first partition groove 1231 is used to partition the organic material layer on the side walls of the second partition groove 1232 and the third partition groove 1233 10;
- the material at the bottom of the first partition groove 1231 and the material covering the partition groove 123, and the material of the encapsulation layer 11 contacting the bottom of the third partition groove are the same type of material;
- the pixel defining layer will be filled at the bottom of the first partition groove 1231.
- the shape of the partition ring 113 can be "gourd-shaped", and the upper layer of the partition ring 113 is a pixel defining layer, which prevents the first partition groove 1231 from being filled with organic film layers such as the pixel defining layer, which can effectively isolate the organic material layer and improve packaging effect.
- crack dams can be omitted, the frame of the opening area is reduced, and the screen-to-body ratio is further increased.
- the substrate 1 includes a first flexible layer, a first barrier layer, and a second flexible layer that are stacked, an array structure layer is formed on the side of the second flexible layer away from the first barrier layer, and the first flexible layer and The first barrier layer arranged between the second flexible layers can improve the water and oxygen barrier ability of the flexible substrate.
- the material of the first flexible layer and the second flexible layer includes polyimide (PI) material
- the thickness of the first flexible layer is 8-12 ⁇ m, preferably 10 ⁇ m
- the thickness of the second flexible layer is 8-12 ⁇ m, preferably 10 ⁇ m
- the first barrier layer is an inorganic layer
- the material of the inorganic layer includes materials such as silicon oxide (SiOx) or silicon nitride (SiNx)
- the thickness of the first barrier layer is 0.8-1.2 ⁇ m, preferably 1 ⁇ m.
- the setting of the thickness of the first barrier layer can not only optimize the effect of blocking external water vapor, but also reduce the thickness of the display panel to achieve lightness and thinness.
- a partition groove 123 or a partition ring 113 is provided to partition the organic material layer 10, by making the material at the bottom of the first partition groove 1231 and the material covering the partition groove 123, and the encapsulation layer in contact with the bottom of the groove
- the material of 11 is the same type of material.
- the adhesion of the film layer is improved, so that the inorganic film layer in the encapsulation layer 11 and the bottom of the partition groove 123
- the close combination of the inorganic film layers can further enhance the packaging effect, so as to prevent external water and oxygen from entering the organic material layer in the display area 101 from the opening area 102, and improve the packaging effect, service life and display effect of the display panel.
- the edges of the third partition groove 1233, the first partition groove 1231, and the second partition groove 1232 form a certain angle with the display panel (such as 75°, 80°, 90°, etc.) ) Stacking directions are set in sequence.
- the third partition groove 1233, the first partition groove 1231, and the second partition groove 1232 are arranged along the stacking direction perpendicular to the display panel as an example for description. But it is not used to limit the present invention.
- the dimension W2 of the notch on the side of the first partition groove 1231 away from the substrate 1 is greater than the dimension W1 of the notch on the side of the second partition groove 1232 close to the substrate 1, so
- the size of the notch on the side of the first partition groove 1231 close to the substrate is larger than the size of the notch on the side far from the substrate of the third partition groove 1233; so that the organic material layer 10 is in the first partition
- the slot is partitioned at 1231.
- the cross-sectional shape of the first partition groove 1231 is an inverted trapezoid or a hexagon; the first partition groove 1231, the second partition groove 1232, and the The angle between the side wall of each of the third partition grooves 1233 and the corresponding bottom plane is >90°.
- the partition groove is cut along the axis of the partition groove 123. In the cut section, the side wall of the section is The angle between the bottom walls of the section is >90°.
- This arrangement is beneficial to form a tightly adhered film layer on the sidewall of the partition groove 123 when the inorganic layer of the packaging layer 11 is formed through a chemical vapor deposition (CVD) process, thereby improving the packaging effect.
- CVD chemical vapor deposition
- the partition groove 123 is an annular groove.
- the annular partition groove is arranged around the aperture area 102 to isolate the organic material layer between the aperture area 102 and the display area 101, thereby isolating the passage of water and oxygen into the display area, and improving the service life and display effect of the display panel.
- the opening area 102 is provided with a mounting hole penetrating the display panel 100 for installing functional elements, a partition groove 123 is provided around the mounting hole, and a partition ring 113 is provided between the partition groove 123 and the mounting hole.
- the functional element may be a camera, a sensor, a microphone, an earpiece, or a physical button.
- partition rings 113 are arranged around the mounting hole.
- the partition ring 113 is a ring-shaped partition ring arranged around the mounting hole to partition the organic material layer 10.
- the organic material layer 10 can be better and more thoroughly separated.
- the material layer 10 improves the packaging effect of the display panel.
- the display panel 100 further includes an array structure layer disposed on the substrate 1, and at least part of the partition grooves 123 are disposed in the array structure layer;
- a buffer layer is provided between the substrate 1 and the array structure layer, at least a part of the isolation groove 123 penetrates the buffer layer, and the material of the encapsulation layer and the material of the buffer layer contacting the bottom of the isolation groove 123 are the same type of material; that is, The material of the buffer layer exposed at the bottom of the partition groove 123 is the same material as the material of the encapsulation layer on the side of the encapsulation layer 11 close to the substrate 1.
- both are inorganic materials, and the inorganic materials may include silicon nitride or silicon oxide.
- This configuration can not only cut off the organic material layer, but also improve the adhesion of the film layer, so that the inorganic film layer in the encapsulation layer 11 and the inorganic film layer of the buffer layer are closely combined, which can enhance the encapsulation effect and prevent external water and oxygen from entering the open area.
- 102 enters the organic material layer 10 in the display area 101, which improves the packaging effect, service life and display effect of the display panel.
- the buffer layer includes a first inorganic layer 2 close to the substrate 1 and a second inorganic layer 3 far away from the substrate 1.
- the isolation groove 123 penetrates the second inorganic layer 3, and the groove of the isolation groove 123
- the material of the bottom contact encapsulation layer 11 and the material of the first inorganic layer 2 are of the same type; specifically, the material of the first inorganic layer 2 includes silicon nitride (SiNx), and the material of the second inorganic layer 3 includes silicon oxide ( SiOx), by providing two inorganic buffer layers, it can not only improve the packaging effect, but also play a role in heat insulation.
- the pollutants from the glass substrate especially sodium ions
- the leakage current caused by the pollutants can be avoided; It can prevent heat conduction loss during the excimer laser annealing (ELA) process, which is beneficial to the formation of large crystal grains and reduces the interface defects of polysilicon.
- ELA excimer laser annealing
- the encapsulation layer 11 is a thin-film encapsulation layer.
- the thin-film encapsulation layer includes a third inorganic layer, an organic layer, and a fourth inorganic layer stacked in sequence.
- the fourth inorganic layer is close to the organic material layer 10 and covers the organic material layer 10
- the fourth inorganic layer and the material at the bottom of the partition groove 123 are of the same type; the thickness of the third inorganic layer is 0.8-1.2 ⁇ m, for example, 1 ⁇ m, and the thickness of the organic layer is 8-12 ⁇ m, for example, 10 ⁇ m.
- the thickness of the inorganic layer is 0.8-1.2 ⁇ m, for example, 1 ⁇ m.
- the materials of the first inorganic layer, the second inorganic layer, the third inorganic layer and the fourth inorganic layer are all silicon oxide or silicon nitride.
- the inorganic layer can improve the encapsulation effect while improving the adhesion of the film layer.
- the organic material layer 10 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer that are stacked, and the hole injection layer is disposed on the array structure layer.
- the array structure layer includes a pixel circuit layer, a planarization layer, and a pixel defining layer.
- the pixel circuit layer forms each film layer of a thin film transistor, such as a semiconductor layer formed on the second inorganic layer 3 of the buffer layer.
- Layer (P-Si) the gate insulating layer 4 formed on the semiconductor layer, the capacitor insulating layer 5 above the gate insulating layer 4, the interlayer dielectric layer 6 above the capacitor insulating layer 5, the interlayer dielectric layer
- the pixel circuit layer includes the source (S), drain (D) and gate (M1) in the Thin Film Transistor (TFT).
- the gate (M1) is located on the gate insulating layer 4 and the capacitor insulating layer Between 5, the source (S) and drain (D) are in contact with the semiconductor layer (P-Si).
- the capacitor of the pixel circuit layer includes a first plate (M1) and a second plate (M2).
- the first plate (M1) is located between the capacitor insulating layer 5 and the interlayer dielectric layer 6, and the second plate (M2) Located between the gate insulating layer 4 and the capacitor insulating layer 5.
- the display panel further includes a first electrode and a second electrode.
- the first electrode is an anode.
- the material of the first electrode includes silver-doped indium tin oxide, or silver-doped indium zinc oxide, or indium zinc oxide or indium tin oxide.
- the first electrode uses silver-doped indium tin oxide or silver-doped indium zinc oxide to reduce the resistance of the first electrode.
- the first electrode is a composite film layer of indium tin oxide and silver.
- the first electrode includes a three-layer composite film layer of indium tin oxide, silver and indium tin oxide, and the middle layer is set as a silver layer, which can increase the conductivity of the first electrode.
- the second electrode is a cathode, and the material of the second electrode is magnesium or silver.
- the application also provides a display device, including any of the above-mentioned display panels.
- the display device may be a mobile phone, a TV, a tablet, a computer, or a camera.
- This application also provides a method for manufacturing a display panel, as shown in FIGS. 9a-9e, including the following steps:
- S10 provides a substrate, and the substrate includes a display area, an opening area located in the display area, and a partition area surrounding the opening area;
- S20 forms an array structure layer on the substrate
- S40 forms an organic material layer on the array structure layer and in the partition groove, and the organic material layer is disconnected at the partition groove;
- S50 forms an encapsulation layer on the side of the organic material layer away from the substrate, the encapsulation layer covers the inner wall of the partition groove, the material at the bottom of the partition groove and the material covering the partition groove, and the material of the encapsulation layer in contact with the bottom of the groove is The same type of material.
- the display panel prepared by the above preparation method can form a partition groove and a partition ring between the aperture area and the display area, and realize the isolation of the organic light-emitting layer between the aperture area and the display area, thereby isolating water and oxygen.
- the intrusion channel improves the packaging effect; on the other hand, the material at the bottom of the partition groove and the material covering the partition groove, and the material of the encapsulation layer contacting the bottom of the groove is the same type of material, such as the bottom of the partition groove
- the material is an inorganic material
- the material of the encapsulation layer covering the partition groove and contacting the bottom of the groove is also an inorganic material, and the materials of both are similar materials, both silicon nitride (SiNx) or silicon oxide (SiOx), It can improve the adhesion of the film layer, make the bottom of the groove and the encapsulation layer more tightly combined, and further improve the encapsulation effect.
- the inorganic material can effectively block water and oxygen, and ensure the service life and display effect of the display panel.
- the inventor found that when preparing the mounting holes in the display area, the reason why the effective disconnection of the organic material layer in the perforated area cannot be achieved is mainly because the organic material layer such as the pixel defining layer will be filled in during the preparation process. In the first partition groove, it is difficult to remove through the exposure process. During subsequent evaporation of the organic material layer, the organic material layer cannot be partitioned, which affects the actual packaging effect and display effect of the display panel. To this end, the inventors first stacked an array structure layer on the substrate, and then formed a partition groove penetrating the array structure layer.
- the partition groove includes a third partition located on the side away from the surface of the substrate.
- the groove 1233, the first partition groove 1231 and the second partition groove 1232, and the third partition groove 1233, the first partition groove 1231 and the second partition groove 1232 are in communication with each other.
- the third partition groove 1233, the first partition groove 1231, and the second partition groove 1232 are arranged in sequence along a surface away from the substrate.
- the third partition groove 1233 is arranged close to the substrate.
- the partition groove 1231 is located on the side of the third partition groove 1233 away from the substrate, and the second partition groove 1232 is located on the side of the first partition groove 1231 away from the third partition groove 1233, and is provided at The top position.
- the size of the notch on the side of the first partition groove 1231 away from the substrate is larger than the size of the notch on the side of the second partition groove close to the substrate, that is, the groove wall of the first partition groove 1231 is recessed inward to make organic
- the material layer is partitioned at the first partition groove 1231; optionally, the first partition groove 1231 in this application is formed after the pixel defining layer is formed, which can prevent the pixel defining layer from entering the first partition groove 1231, thereby effectively When the mounting hole is prepared, the organic material layer in the opening area is disconnected, which can prevent water and oxygen from entering the display area from the opening area, and improve the packaging effect, service life and display effect of the display panel.
- the step of forming at least one partition groove at least partially in the array structure layer in the partition area includes:
- a hole is punched in the array structure layer located in the partition area to form at least one first partition hole, and the first partition hole is filled with a metal material to form a metal sacrificial layer 13; a planarization layer 8 is formed on the array structure layer; FIG. 9a As shown in and 9b, the planarization layer 8 and part of the metal sacrificial layer 13 are etched to expose part of the metal sacrificial layer 13 to form a second isolation hole; further, as shown in FIG. 9c, in the second isolation hole, The remaining material of the metal sacrificial layer 13 is removed to form a separation groove 123 for separating the organic material layer 10 so that the organic material layer 10 is disconnected at the removed metal sacrificial layer 13.
- the preparation of the partition groove 123 is achieved through the above process, which can simplify the process and reduce the impact on the display panel.
- removing the remaining metal sacrificial layer 13 material to form the partition groove 123 can be achieved by a wet side etching process. While removing the remaining metal sacrificial layer, it will not affect other film layers, ensuring the display The reliability of the panel.
- the partition groove 123 includes a first partition groove 1231 close to the substrate 1 and a second partition groove 1232 away from the substrate 1.
- the first partition groove 1231 is away from the substrate 1
- the dimension W2 of the notch on one side is greater than the dimension W1 of the notch on the side of the second partition groove 1232 close to the substrate 1, that is, a step is formed between the first partition groove 1231 and the second partition groove 1232 to make organic
- the material layer is partitioned at the first partition groove 1231.
- the cross-sectional shape of the first partition groove 1231 is an inverted trapezoid.
- the angle between the sidewall of the first partition groove 1231 and the bottom of the partition groove can be greater than 90°, so that the encapsulation layer can be in close contact with the groove wall of the partition groove, which improves the adhesion of the film layer and the packaging effect.
- the method before forming the second partition hole, the method further includes:
- a pixel defining layer 9 is formed on the planarization layer 8 located in the partition area; the pixel defining layer 9 and the planarization layer 8 and a part of the metal sacrificial layer 13 are etched to expose a part of the metal sacrificial layer 13 to form a second partition hole . It prevents the organic material layer from being effectively separated due to the material of the pixel defining layer being deposited in the partition groove.
- a partition ring 113 is formed between adjacent partition grooves 123 to partition the organic material layer 10.
- the material of the metal sacrificial layer includes titanium and/or aluminum.
- the metal sacrificial layer can be formed by a separate process, or can be formed in the same process step as the metal layer in the array structure layer.
- the metal layer in the array structure layer can include the electrode layer (capacitive The first electrode or the second electrode, or the gate electrode, etc.) or the wiring layer (data line or scan line).
- the step of forming at least one partition groove at least partially in the array structure layer in the partition area includes:
- a hole is punched in the array structure layer located in the partition area to form at least one first partition hole, and the first partition hole is filled with a metal material to form a metal sacrificial layer 13; a planarization layer 8 is formed on the array structure layer; The metal sacrificial layer 8 and a part of the metal sacrificial layer 13 are exposed to expose a part of the metal sacrificial layer 13 to form a second isolation hole; a part of the metal sacrificial layer 13 is removed to form a partition groove 123 for isolating the organic material layer.
- the isolation groove can also be formed to realize the isolation of the organic material layer and improve the packaging effect.
- the partition groove 123 includes a first partition groove 1231 near the substrate 1 and a partition groove 1231 far away from the substrate 1
- the second partition groove 1232 of the bottom 1 the maximum size of the first partition groove 1231 is larger than the size of the slot on the side of the second partition groove 1232 close to the substrate 1, so that the organic material layer 10 is partitioned at the first partition groove 1231
- the cross-sectional shape of the first partition groove 1231 is a hexagon, and the side wall of the partition groove 123 connected to the bottom of the partition groove 123 and the bottom of the partition groove 123
- the included angle of the plane>90°; at this time, the metal sacrificial layer includes a three-layer structure.
- the material of the three-layer structure is titanium/aluminum/titanium (Ti/Al/Ti).
- the etching rate of the metal layer is greater than the etching rate of the titanium metal layer, so that the cross-sectional shape of the first partition groove 1231 is hexagonal, and the sidewall of the partition groove 123 connected to the bottom of the partition groove 123 and the bottom plane of the partition groove 123
- the included angle>90° can effectively improve the packaging effect and prevent water and oxygen from invading.
- the method before forming the second partition hole, the method further includes:
- a pixel defining layer 9 is formed on the planarization layer 8 located in the partition area; the pixel defining layer 9 and the planarization layer 8 and a part of the metal sacrificial layer 13 are etched to expose a part of the metal sacrificial layer 13 to form a second partition hole . It prevents the organic material layer from being effectively separated due to the material of the pixel defining layer being deposited in the partition groove.
- a blocking ring 113 is formed between adjacent blocking grooves 123 to block the organic material layer 10, which can also have the effect of blocking cracks.
- the material of the metal sacrificial layer 13 includes titanium and/or aluminum.
- the first partition groove is filled with titanium, aluminum and titanium in sequence to form a metal sacrificial layer with a three-layer structure of titanium layer, aluminum layer and titanium layer.
- the metal sacrificial layer and the metal lead layer of the array structure layer are formed in the same process step.
- the metal leads include scan lines and data lines.
- the preparation method further includes:
- a buffer layer is formed on the substrate, and at least part of the isolation groove 123 penetrates the buffer layer.
- the buffer layer includes a first inorganic layer 2 close to the substrate 1 and a second inorganic layer 3 far away from the substrate 1.
- the partition groove 123 penetrates the second inorganic layer 3; that is, the bottom of the partition groove exposes the first inorganic layer 2 and encapsulates
- the layer 11 is in direct contact with the first inorganic layer 2, which can improve the adhesion of the film.
- the manufacturing method of the display panel 100 further includes: as shown in FIG. 9e, after the packaging layer 11 is prepared, a mounting hole penetrating the display panel is opened in the opening area 102 of the display panel 100 for mounting functional elements, such as a camera. Or earpiece etc.
- the array structure layer includes a stacked semiconductor layer (P-Si) on the second inorganic layer 3 of the buffer layer, a gate insulating layer 4 on the semiconductor layer, and a gate insulating layer 4 on the gate insulating layer 4.
- the pixel circuit layer includes the source (S), drain (D) and gate (M1) in the Thin Film Transistor (TFT).
- the gate (M1) is located on the gate insulating layer 4 and the capacitor insulating layer Between 5, the source (S) and drain (D) are in contact with the semiconductor layer (P-Si) layer.
- the capacitor of the pixel circuit layer includes a first plate (M1) and a second plate (M2).
- the first plate (M1) is located between the capacitor insulating layer 5 and the interlayer dielectric layer 6, and the second plate (M2) Located between the gate insulating layer 4 and the capacitor insulating layer 5.
- the material of the semiconductor layer is P-Si or ⁇ -Si, the thickness of the semiconductor layer is 45-55nm; the thickness of the gate insulating layer 4 is 95-105nm, and the material is silicon oxide or zirconium oxide; the thickness of the gate (M1) It is 245-255 nm, and the thickness of the capacitor insulating layer 5 is 95-105 nm.
- the pixel circuit is used to drive the organic light emitting device to emit light.
- An anode 12 is formed on the planarization layer 8
- a pixel defining layer 9 is formed on the planarizing layer 8 and the anode 12 located in the display area, and the pixel defining layer 9 is etched to expose at least part of the anode 12 to form a pixel opening, which is prepared in the pixel opening
- the organic material layer forms a cathode on the organic material layer.
- a pixel defining layer 9 may be formed on the planarization layer located in the partition area, or no pixel defining layer may be formed; the display panel further includes spacers (spacer, abbreviated as SPC) arranged on the pixel defining layer 9
- the height of the isolation column is 1400-1600 nm, preferably 1500 nm, and is used to support the mask when the organic light-emitting material is evaporated.
- the display panel and the preparation method thereof and the display device provided in the present application has a mounting hole for installing functional elements such as a camera, a partition ring and a partition groove are arranged around the mounting hole, and the opening area and display are realized by the partition ring and the partition groove
- the separation of the organic material layer between the regions prevents water and oxygen from entering the display region of the display panel, and improves the service life and display effect of the display panel.
- the arrangement of the partition groove can also play a role in preventing cracks.
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Abstract
Description
Claims (20)
- 一种显示面板,包括:衬底,所述衬底包括:显示区;位于所述显示区内的开孔区;以及围绕所述开孔区的隔断区,所述隔断区至少设置有一个围绕所述开孔区设置的隔断环,所述隔断环的至少一侧设置有隔断槽,其中,所述隔断槽包括位于远离所述衬底一侧设置的第三隔断槽、第一隔断槽和第二隔断槽,所述第三隔断槽、第一隔断槽和第二隔断槽互相连通,所述第一隔断槽用于隔断所述第二隔断槽和所述第三隔断槽侧壁上的有机材料层。
- 根据权利要求1所述的显示面板,其中,在垂直于所述显示面板层叠方向上,所述第三隔断槽、所述第一隔断槽和第二隔断槽沿远离所述衬底表面的一侧设置,所述第一隔断槽远离所述衬底的一侧的槽口的尺寸大于所述第二隔断槽的靠近所述衬底的一侧的槽口的尺寸,所述第一隔断槽靠近所述衬底一侧的槽口的尺寸大于所述第三隔断槽的远离所述衬底一侧的槽口的尺寸。
- 根据权利要求1所述的显示面板,其中,在垂直于所述显示面板层叠方向上,所述第一隔断槽的截面形状为倒梯形或六边形;所述第一隔断槽、第二隔断槽和第三隔断槽中的每个隔断槽的侧壁与其各自底部所处的平面的夹角>90°。
- 根据权利要求1所述的显示面板,其中,所述开孔区内设置贯穿所 述显示面板的安装孔,所述安装孔用于安装功能元件,所述隔断槽围绕所述安装孔设置,所述隔断环设置于所述隔断槽与所述安装孔之间,以隔断有机材料层。
- 根据权利要求4所述的显示面板,其中,围绕所述安装孔设置有至少两个所述隔断环,以隔断有机材料层。
- 根据权利要求1-5任一项所述的显示面板,其中,所述显示面板还包括设置于所述衬底上的阵列结构层,所述隔断槽至少部分设置于所述阵列结构层内。
- 根据权利要求6所述的显示面板,其中,在所述衬底与所述阵列结构层之间设置缓冲层,所述隔断槽至少部分贯穿所述缓冲层,与所述隔断槽的槽底部接触的封装层材料与所述缓冲层的材料为同一类材料。
- 根据权利要求7所述的显示面板,其中,所述缓冲层包括靠近所述衬底的第一无机层和远离所述衬底的第二无机层,所述隔断槽贯穿所述第二无机层,与所述隔断槽的槽底部接触的封装层材料与所述第一无机层的材料为同一类材料。
- 根据权利要求8所述的显示面板,其中,所述封装层为薄膜封装层,所述薄膜封装层包括依次层叠设置的第三无机层、有机层和第四无机层,所述第四无机层靠近所述有机材料层并覆盖在所述有机材料层上,所述第四无机层与所述隔断槽的槽底部的材料为同一类材料。
- 一种显示装置,包括权利要求1-9中任一项所述的显示面板。
- 一种显示面板的制备方法,其中,包括如下步骤:提供衬底,所述衬底包括显示区、位于所述显示区内的开孔区、以及 围绕所述开孔区的隔断区;在所述衬底上形成阵列结构层,在所述隔断区内预设有至少两个沿平行于所述衬底方向间隔设置的金属牺牲层,在相邻的所述金属牺牲层之间形成第二隔断孔,使金属牺牲层裸露于所述第二隔断孔的侧壁;去除所述金属牺牲层,形成至少部分位于所述阵列结构层内的至少一个隔断槽;在所述阵列结构层上及所述隔断槽内形成有机材料层,所述有机材料层在已去除的所述金属牺牲层处断开。
- 根据权利要求11所述的制备方法,其中,形成金属牺牲层的步骤包括:在位于所述隔断区内的阵列结构层中打孔,以形成至少一个第一隔断孔,所述第一隔断孔内填充金属材料以形成金属牺牲层。
- 根据权利要求12所述的制备方法,其中,使金属牺牲层裸露的步骤包括:在所述阵列结构层上形成平坦化层;刻蚀所述平坦化层以及部分所述金属牺牲层材料,以暴露部分所述金属牺牲层,以形成第二隔断孔。
- 根据权利要求13所述的制备方法,其中,在形成所述第二隔断孔之前还包括:在位于所述隔断区内的所述平坦化层上形成像素限定层;刻蚀所述像素限定层和所述平坦化层以及部分所述金属牺牲层材料,以暴露部分所述金属牺牲层,以形成第二隔断孔。
- 根据权利要求11所述的制备方法,其中,相邻隔断槽之间形成隔断环。
- 根据权利要求11所述的制备方法,其中,所述金属牺牲层的材料包括钛和/或铝。
- 根据权利要求12所述的制备方法,其中,所述金属牺牲层与所述阵列结构层的金属引线层在同一工艺步骤中形成。
- 根据权利要求11-18任一项所述的制备方法,其中,所述制备方法还包括:在所述衬底上形成缓冲层,至少部分所述隔断槽贯穿所述缓冲层。
- 根据权利要求18所述的制备方法,其中,所述缓冲层包括靠近所述衬底的第一无机层和远离所述衬底的第二无机层,所述隔断槽贯穿所述第二无机层。
- 根据权利要求18所述的制备方法,其中,所述显示面板的制备方法还包括:在制备封装层后,在所述显示面板的开孔区开设贯穿所述显示面板的安装孔,用于安装功能元件。
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JP2021552633A JP7194291B2 (ja) | 2019-07-31 | 2020-03-27 | 表示パネルとその製造方法 |
KR1020217028635A KR20210123389A (ko) | 2019-07-31 | 2020-03-27 | 디스플레이 패널, 그 제조 방법 및 디스플레이 장치 |
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JP7194291B2 (ja) | 2022-12-21 |
US20210376293A1 (en) | 2021-12-02 |
JP2022523978A (ja) | 2022-04-27 |
CN110828519B (zh) | 2023-02-07 |
EP3923337A1 (en) | 2021-12-15 |
EP3923337A4 (en) | 2022-06-08 |
TWI722856B (zh) | 2021-03-21 |
CN110828519A (zh) | 2020-02-21 |
CN110429118A (zh) | 2019-11-08 |
EP3923337B1 (en) | 2023-07-12 |
KR20210123389A (ko) | 2021-10-13 |
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