CN113053917B - 显示屏、阵列基板及其制造方法 - Google Patents

显示屏、阵列基板及其制造方法 Download PDF

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CN113053917B
CN113053917B CN202110261417.3A CN202110261417A CN113053917B CN 113053917 B CN113053917 B CN 113053917B CN 202110261417 A CN202110261417 A CN 202110261417A CN 113053917 B CN113053917 B CN 113053917B
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CN113053917A (zh
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曹志浩
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本申请实施例提供显示屏、阵列基板及其制造方法。阵列基板的制造方法包括：提供一第一基板，所述第一基板包括依次层叠设置的衬底基板、缓冲层、无机膜层、平坦层和金属层，所述金属层包括第一金属层和第二金属层，所述第一金属层为阳极，所述阳极和所述第二金属层采用同一种材料在同一工艺中形成，所述第二金属层具有多个开口，所述平坦层填充有机光阻；在所有所述开口处蚀刻所述有机光阻以在所述平坦层形成内凹陷结构。本申请实施例的第二金属层和作为阳极的第一金属层采用同一种材料在同一工艺中形成，阵列基板在成型内凹陷结构过程中第二金属层可以起到光罩的作用，可节约额外铺设光罩的工艺，其中，内凹陷结构可达到隔绝水汽的效果。

Description

显示屏、阵列基板及其制造方法
技术领域
本申请涉及显示技术领域，特别涉及显示屏、阵列基板及其制造方法。
背景技术
当前，在OLED(Organic Light-Emitting Diode,有机发光二极管)屏幕领域，为了实现前置摄像头的方案，一般会在屏幕中预留一个通孔为整机摄像头方案使用。对于OLED屏幕，使用通孔设计方案，会影响到封装。
当前的通孔设计方案是增加一道光罩制程，配合灰化等制程，形成一个内凹陷结构，使得发光层蒸镀时，因为内凹陷结构的设计，发光层有机膜层得以在此断裂，从而达到隔绝水汽的效果，此设计能隔绝水汽，但是需要增加一道光罩制程。
发明内容
本申请实施例提供显示屏、阵列基板及其制造方法，用于解决现有技术中OLED屏幕为了隔绝水汽而增加光罩制程的问题。
本申请实施例提供一种阵列基板的制造方法，包括如下步骤：
提供一第一基板，所述第一基板包括依次层叠设置的衬底基板、缓冲层、无机膜层、平坦层和金属层，所述金属层包括第一金属层和第二金属层，第一金属层为阳极，所述阳极和所述第二金属层采用同一种材料在同一工艺中形成，所述第二金属层具有多个开口，所述平坦层填充有机光阻；
在所有所述开口处蚀刻所述有机光阻以在所述平坦层形成内凹陷结构。
进一步地，提供一衬底基板；
在所述衬底基板的上方形成沿平行于所述衬底基板方向的缓冲层；
在所述缓冲层上形成无机膜层；
在所述无机膜层上形成平坦层；
在所述平坦层上形成所述阳极和所述第二金属层。
进一步地，在所述无机膜层上形成第一平坦层；
在所述第一平坦层上形成第二平坦层；
所述内凹陷结构贯穿所述第一平坦层和所述第二平坦层。
进一步地，所述内凹陷结构呈弧形，且所述内凹陷结构在靠近所述第二金属层一侧形成的宽度大于靠近所述衬底基板一侧形成的宽度。
本申请实施例还提供一种阵列基板，包括：
衬底基板；
缓冲层，所述缓冲层位于所述衬底基板上；
无机膜层，所述无机膜层位于所述缓冲层上；
平坦层，所述平坦层位于所述无机膜层上；以及
金属层，所述金属层位于所述平坦层上；
所述金属层包括在同一步骤中形成的第一金属层和第二金属层，所述第一金属层为阳极，所述第二金属层具有多个开口。
进一步地，所述平坦层上有与所述开口连通的内凹陷结构。
进一步地，所述平坦层包括第一平坦层和第二平坦层，所述第一平坦层位于所述无机膜层上，所述第二平坦层位于所述第一平坦层上，所述内凹陷结构贯穿所述第一平坦层和所述第二平坦层。
进一步地，所述内凹陷结构的底部为弧形，所述内凹陷结构靠近所述第二金属层一侧的宽度大于靠近所述衬底基板一侧的宽度。
进一步地，所述平坦层采用有机光阻。
进一步地，所述无机膜层包括第一无机膜层和第二无机膜层，所述第一无机膜层位于所述缓冲层上，所述第二无机膜层位于所述第一无机膜层上。
本申请实施例还提供一种显示屏，包括如上所述的阵列基板。
本申请实施例，第二金属层和作为阳极的第一金属层采用同一种材料在同一工艺中形成，阵列基板在成型内凹陷结构过程中,第二金属层可以起到光罩的作用，相比现有技术额外再铺设一层光罩来形成内凹陷结构，本申请实施例可以节约额外铺设光罩的工艺，其中内凹陷结构可以达到隔绝水汽的效果。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的阵列基板的制造方法的第一流程框图。
图2为本申请实施例提供的阵列基板的制造方法的第二流程框图。
图3为本申请实施例提供的阵列基板的第一结构示意图。
图4为本申请实施例提供的阵列基板的第二结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1至图4，图1为本申请实施例提供的阵列基板的制造方法的流程框图，图2为本申请实施例提供的阵列基板的制造方法的第二流程框图，图3为本申请实施例提供的阵列基板的第一结构示意图，图4为本申请实施例提供的阵列基板的第二结构示意图。本申请实施例中，阵列基板100的制造方法包括如下步骤：
10，提供一第一基板，所述第一基板包括衬底基板110、缓冲层120、无机膜层130、平坦层140和金属层150，所述金属层150包括第一金属层和第二金属层150a，第一金属层为阳极，所述阳极和所述第二金属层150a采用同一种材料在同一工艺中形成，所述第二金属层150a具有多个开口1501a，所述平坦层140填充有机光阻。
20，在所有所述开口处1501a蚀刻所述有机光阻以在所述平坦层140形成内凹陷结构140a。
具体地，阵列基板100在成型内凹陷结构140a过程中,第二金属层150a可以起到光罩的作用，对平坦层140进行曝光处理，被曝光的有机光阻被灰化去除，接着，蚀刻未被第二平坦层1402覆盖的第一平坦层1401形成内凹陷结构140a。
具体地，形成第一基板包括如下步骤：
11，提供一衬底基板110。
12，在所述衬底基板110的上方形成沿平行于所述衬底基板110方向的缓冲层120。
13，在所述缓冲层120上形成无机膜层130。
14，在所述无机膜层130上形成平坦层140。
15，在所述平坦层140上形成所述阳极和所述第二金属层150a。
其中，在所述无机膜层130上形成第一平坦层1401，在所述第一平坦层1401上形成第二平坦层1402，所述内凹陷结构140a贯穿所述第一平坦层1401和所述第二平坦层1402。
具体地，所述内凹陷结构140a呈弧形，且所述内凹陷结构140a在靠近所述第二金属层150a一侧形成的宽度大于靠近所述衬底基板110一侧形成的宽度。
本申请实施例还提供一种阵列基板100，如图3和图4所示，包括：衬底基板110、缓冲层120、无机膜层130、平坦层140及金属层150。
具体地，衬底基板110可以为玻璃基体、塑料基体或可挠式基体，而对于制造柔性显示屏的阵列基板的场景，该衬底基板110也可以为柔性基板，例如选用PI(Polyimide,聚酰亚胺)基板。
其中，所述缓冲层120位于所述衬底基板110上。
其中，所述无机膜层130位于所述缓冲层120上，所述无机膜层的材料为无机材料。具体地，所述无机膜层130包括第一无机膜层1301和第二无机膜层1302，所述第一无机膜层1301位于所述缓冲层120上，所述第二无机膜层1302位于所述第一无机膜层1301上，所述第一无机膜层1301的材料和所述第二无机膜层1302的材料可以相同也可以不相同。
其中，所述平坦层140位于所述无机膜层130上，所述平坦层140可以采用有机光阻。具体地，所述平坦层140上有与所述开口1501a连通的内凹陷结构140a。具体地，所述平坦层140包括第一平坦层1401和第二平坦层1402，所述第一平坦层1401位于所述无机膜层130上，所述第二平坦层1402位于所述第一平坦层1401上，所述内凹陷结构140a贯穿所述第一平坦层1401和所述第二平坦层1402。
具体地，所述内凹陷结构140a的底部为弧形，所述内凹陷结构140a靠近所述第二金属层150a一侧的宽度大于靠近所述衬底基板110一侧的宽度。
其中，所述金属层150位于所述平坦层140上。所述金属层150包括在同一步骤中形成的第一金属层和第二金属层150a，所述第二金属层150a具有多个开口1501a。
本申请实施例还提供一种显示屏，包括如上所述的阵列基板100，显示屏可以是LCD、OLED显示屏，其可以应用于电子设备诸如手机、pad等中。
以上对本申请实施例提供的显示屏、阵列基板及其制造方法进行了详细介绍。本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请。同时，对于本领域的技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。

Claims (10)

1.一种阵列基板的制造方法，其特征在于，包括：
提供一第一基板，所述第一基板包括依次层叠设置的衬底基板、缓冲层、无机膜层、平坦层和金属层，所述金属层包括第一金属层和第二金属层，所述第一金属层为阳极，所述阳极和所述第二金属层采用同一种材料在同一工艺中形成，所述第二金属层具有多个开口，所述平坦层填充有机光阻；
在所有所述开口处蚀刻所述有机光阻以在所述平坦层形成内凹陷结构。
2.根据权利要求1所述的阵列基板的制造方法，其特征在于，所述第一基板采用如下步骤成型：
提供一衬底基板；
在所述衬底基板的上方形成沿平行于所述衬底基板方向的缓冲层；
在所述缓冲层上形成无机膜层；
在所述无机膜层上形成平坦层；
在所述平坦层上形成所述阳极和所述第二金属层。
3.根据权利要求2所述的阵列基板的制造方法，其特征在于，在所述无机膜层上形成所述平坦层，包括：
在所述无机膜层上形成第一平坦层；
在所述第一平坦层上形成第二平坦层；
所述内凹陷结构贯穿所述第一平坦层和所述第二平坦层。
4.根据权利要求1至3所述的任一项阵列基板的制造方法，所述内凹陷结构呈弧形，且所述内凹陷结构在靠近所述第二金属层一侧形成的宽度大于靠近所述衬底基板一侧形成的宽度。
5.一种阵列基板，其特征在于，包括：
衬底基板；
缓冲层，所述缓冲层位于所述衬底基板上；
无机膜层，所述无机膜层位于所述缓冲层上；
平坦层，所述平坦层位于所述无机膜层上；以及
金属层，所述金属层位于所述平坦层上；
所述金属层包括在同一步骤中形成的第一金属层和第二金属层，所述第一金属层为阳极，所述第二金属层具有多个开口；
所述平坦层上有与所述开口连通的内凹陷结构。
6.根据权利要求5所述的阵列基板，其特征在于，所述平坦层包括第一平坦层和第二平坦层，所述第一平坦层位于所述无机膜层上，所述第二平坦层位于所述第一平坦层上，所述内凹陷结构贯穿所述第一平坦层和所述第二平坦层。
7.根据权利要求6所述的阵列基板，其特征在于，所述内凹陷结构的底部为弧形，所述内凹陷结构靠近所述第二金属层一侧的宽度大于靠近所述衬底基板一侧的宽度。
8.根据权利要求5所述的阵列基板，其特征在于，所述平坦层采用有机光阻。
9.根据权利要求5所述的阵列基板，其特征在于，所述无机膜层包括第一无机膜层和第二无机膜层，所述第一无机膜层位于所述缓冲层上，所述第二无机膜层位于所述第一无机膜层上。
10.一种显示屏，包括如权利要求5至9任一项所述的阵列基板。
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