WO2021164617A1 - 显示面板和显示装置 - Google Patents

显示面板和显示装置 Download PDF

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Publication number
WO2021164617A1
WO2021164617A1 PCT/CN2021/076045 CN2021076045W WO2021164617A1 WO 2021164617 A1 WO2021164617 A1 WO 2021164617A1 CN 2021076045 W CN2021076045 W CN 2021076045W WO 2021164617 A1 WO2021164617 A1 WO 2021164617A1
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WIPO (PCT)
Prior art keywords
layer
opening
organic flat
inorganic passivation
display panel
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PCT/CN2021/076045
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English (en)
French (fr)
Inventor
贾立
高涛
吕祖彬
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US17/440,934 priority Critical patent/US11997886B2/en
Publication of WO2021164617A1 publication Critical patent/WO2021164617A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel and a display device.
  • the curved display screen needs to be stretched at the bends of its four corners to prevent the display screen from wrinkling and affecting the display quality of the display screen here.
  • the stretchability of the display screen is relatively poor.
  • water vapor will easily spread from the sidewall of the hole to the OLED (Organic Light-Emitting Diode) device, causing the OLED to fail and then damaging the OLED device.
  • OLED Organic Light-Emitting Diode
  • a display panel having at least one opening, the display panel comprising: a substrate; a thin film transistor structure layer on the substrate; a first inorganic passivation Layer, an inorganic passivation layer is located on the side of the thin film transistor structure layer away from the substrate; an organic flat layer, the organic flat layer is located on the first inorganic passivation layer away from the thin film transistor structure layer One side; a second inorganic passivation layer, the second inorganic passivation layer is located on the side of the organic flat layer away from the first inorganic passivation layer, wherein the at least one opening at least penetrates the The first inorganic passivation layer, the organic flat layer, and the second inorganic passivation layer, and the second inorganic passivation layer faces all along the side of the organic flat layer close to the at least one opening.
  • the first inorganic passivation layer extends and covers the exposed part of the organic flat layer close to the at least one opening.
  • the first inorganic passivation layer has a first side wall close to the at least one opening
  • the organic flat layer has a second side wall close to the at least one opening
  • the first The two side walls are far away from the center axis of the at least one opening in a direction perpendicular to the substrate relative to the first side wall.
  • the distance between the second side wall and the central axis is greater than the distance between the first side wall and the central axis by 1.5 to 2.0 micrometers.
  • the organic flattening layer includes a first organic flattening sublayer and a second organic flattening sublayer, wherein the first organic flattening sublayer is located on the first inorganic passivation layer away from the thin film.
  • the second organic flat sublayer is located on the side of the first organic flat sublayer away from the first inorganic passivation layer, and the first organic flat sublayer has a side close to the first inorganic passivation layer.
  • At least one first sub-side wall with an opening, and the second organic flat sub-layer has a second sub-side wall close to the at least one opening.
  • the distance between the first side wall and the central axis is not equal to the distance between the second side wall and the central axis.
  • the second sub-side wall is away from a central axis of the at least one opening in a direction perpendicular to the substrate relative to the first sub-side wall.
  • the distance between the second side wall and the central axis is greater than the distance between the first side wall and the central axis by 3.0 to 4.0 micrometers.
  • the distance between the first side wall and the central axis is greater than the distance between the first side wall and the central axis by 1.5 to 2.0 micrometers.
  • the display panel further includes a groove surrounding the at least one opening, and the groove penetrates the second inorganic passivation layer and at least part of the second inorganic passivation layer in a direction perpendicular to the substrate. Two organic flat sublayers.
  • the display panel further includes a groove surrounding the at least one opening, and the groove penetrates the second inorganic passivation layer and the second organic passivation layer in a direction perpendicular to the substrate.
  • the display panel further includes: a first conductive structure, the first conductive structure is located on a side of the first organic flat sublayer away from the substrate, and extends through the first conductive structure.
  • An organic flat sub-layer and a through hole of the first inorganic passivation layer are electrically connected to the source of the thin film transistor in the thin film transistor structure layer;
  • a second conductive structure, the second conductive structure is located in the first The side of the organic flat sub-layer away from the substrate, and through the through holes extending through the first organic flat sub-layer and the first inorganic passivation layer and the thin film transistor structure layer of the thin film transistor
  • the drain is electrically connected;
  • a pixel defining layer, the pixel defining layer is located on a side of the second inorganic passivation layer away from the second organic flat sublayer, and has at least one opening exposing the second inorganic passivation layer
  • a light-emitting element includes a first electrode, a light-emitting layer and
  • the substrate includes a first flexible substrate, a first barrier layer, a second flexible substrate, and a second barrier layer that are sequentially arranged, and the thin film transistor structure layer is located on the side of the second barrier layer.
  • the display panel includes at least one bending area, wherein the at least one opening is located in the bendable area.
  • the at least one bending area is located at a corner of the display panel.
  • a display device including the above-mentioned display panel and a driving circuit for driving the display panel.
  • FIG. 1 is a plan view of a display panel in an embodiment of the present disclosure
  • Figure 2 is an enlarged view of the bending area in Figure 1;
  • Fig. 3 is a cross-sectional view along AA' in Fig. 2 in an embodiment of the present disclosure
  • Fig. 4 is a cross-sectional view along AA' in Fig. 2 in an embodiment of the present disclosure
  • FIG. 5 is a schematic diagram of the structure of a display panel in an example of the present disclosure.
  • FIG. 6 is a schematic diagram of the structure of a display panel in an example of the present disclosure.
  • FIG. 7 is a schematic structural diagram of a display panel in an example of the present disclosure.
  • FIG. 8 is a schematic structural diagram of a display panel in an example of the present disclosure.
  • FIG. 9 is a schematic diagram of the structure of a display panel in an example of the present disclosure.
  • the present disclosure provides a display panel.
  • FIG. 1 is an expanded schematic view of the display panel 100
  • FIG. 2 is an enlarged view of a certain bending area 110 in FIG. 1
  • the display panel 100 has at least one
  • the bending area 110 has at least one opening 111 in the bending area 110.
  • FIG. 3 is a cross-sectional view along AA' in FIG.
  • the display panel 100 includes: a substrate 10; a thin film transistor structure layer disposed on the substrate 10; a first inorganic passivation Layer (PVX) 30, the first inorganic passivation layer 30 is arranged on the side of the thin film transistor structure layer away from the substrate 10; the organic flat layer (PLN) 20, the organic flat layer 20 is arranged on the side away from the first inorganic passivation layer 30 One side of the substrate 10; a second inorganic passivation layer 50, the second inorganic passivation layer 50 is disposed on the side of the organic flat layer 20 away from the substrate 10. As shown in FIG.
  • the at least one opening 111 penetrates at least the first inorganic passivation layer 30, the organic flat layer 20 and the second inorganic passivation layer 50.
  • the second inorganic passivation layer 50 extends along the side of the organic flat layer 20 close to the at least one opening 111 toward the first inorganic passivation layer 30 and covers the organic flat layer The exposed part of the side of 20 close to the at least one opening.
  • the organic flat layer 20 is covered by the dense second inorganic passivation layer 50 to prevent the spread of water vapor and oxygen to the OLED device, thereby preventing water vapor and oxygen from damaging the OLED device, and improving the life and life of the display panel. Display quality.
  • the display panel further includes a recess as a recess blocking structure surrounding at least one opening (a side of the recess close to the opening 111 may form a spacer, as shown in FIGS. 6-9) .
  • the groove provided around the at least one opening will prevent water vapor and oxygen from passing through a part of the OLED exposed to the opening 111 (such as the cathode. Open setting) and enter the organic light-emitting material layer in the OLED device, thereby damaging the OLED device.
  • the groove blocks the cathode connection failure, that is, when the cathode of the OLED device is connected in the groove, the cathode of the OLED device will be in contact with the underlying organic material layer (for example, the organic flat layer), thereby making Water vapor and oxygen enter the cathode of the OLED device through the organic flat layer, and then reach the light-emitting layer of the OLED device, which affects the light emission of the OLED device and damages the OLED device.
  • the underlying organic material layer for example, the organic flat layer
  • the second inorganic passivation layer 50 by arranging the second inorganic passivation layer 50 to extend along the side of the organic flat layer 20 close to the at least one opening 11 toward the first inorganic passivation layer 30, and Cover the exposed part of the organic flat layer 20 on the side close to the at least one opening 11, that is, the second inorganic passivation layer 50 and the first inorganic passivation layer 30 cover the organic flat layer 20 without Exposure to at least one opening 11 can prevent moisture and oxygen from entering the organic flat layer 20 through the dense second inorganic passivation layer 50 and the first inorganic passivation layer 30.
  • the first inorganic passivation layer 30 has a first sidewall 31 close to the at least one opening 11
  • the organic flat layer 20 has a first sidewall 31 close to the at least one opening.
  • the second side wall 21 of the opening 11 is far away from the first side wall 31 of the central axis XX′ of the at least one opening 11 along the direction perpendicular to the substrate 10. That is, in the present disclosure, the distance d1 between the second sidewall 21 of the organic flat layer 20 close to the opening 111 and the central axis XX' is greater than the first inorganic passivation layer 30 close to the opening 111.
  • the distance between the second side wall 21 and the central axis XX' is greater than the distance between the first side wall 31 and the central axis XX' 1.5 to 2.0 microns in size. That is, the "step" has a width of 1.5 to 2.0 microns in the direction away from the central axis XX'.
  • the width can be 1.6 micrometers, 1.7 micrometers, 1.8 micrometers, or 1.9 micrometers, or other desired width values.
  • the organic flat layer 20 includes a first organic flat sub-layer 60 and a second organic flat sub-layer 40.
  • the first organic flat sublayer 60 is located on a side of the first inorganic passivation layer 30 away from the thin film transistor structure layer
  • the second organic flat sublayer 40 is located on the first organic flat sublayer 60 The side away from the first inorganic passivation layer 30.
  • the first organic flat sub-layer 60 has a first sub-side wall 61 close to the at least one opening 111
  • the second organic flat sub-layer 40 has a second sub-side wall close to the at least one opening 111 41.
  • the distance between the first sub-side wall 61 and the central axis XX' is not equal to the distance between the second sub-side wall 41 and the central axis XX'.
  • the second sub-side wall 41 may be far away from the central axis XX' of the at least one opening 111 in the direction perpendicular to the substrate 10 relative to the first sub-side wall 61.
  • the distance D1 between the first sub-sidewall 61 of the first organic flat sublayer 60 close to the opening 111 and the central axis XX' is greater than the first inorganic passivation layer 30 close to the opening.
  • the distance D3 between the sidewall 31 and the central axis XX', and the distance D2 between the second sub-sidewall 41 of the second organic flat sublayer 40 close to the opening 111 and the central axis of the opening 111 is greater than that of the first organic flat sublayer.
  • the distance D1 between the first sub-sidewall 61 of the sublayer 60 close to the opening and the central axis that is, relative to the first sidewall 31 of the first inorganic passivation layer, so that the first organic flat sublayer 60 and the second organic flat
  • the sub-layer 40 shrinks in sequence and the second inorganic passivation layer 50 covers the second sub-sidewall 41 of the second organic flat sublayer 40 and the first sub-sidewall 61 of the first organic flat sublayer 60.
  • the first organic flat sublayer 60 and the first inorganic passivation layer 30 form a "step” structure
  • the second organic flat sublayer 40 and the first organic flat sublayer 60 form another "step” structure.
  • the second inorganic passivation layer 50 extends along the above two “steps” to cover the first organic flat sublayer 60 and the second organic flat sublayer 40. In this way, water vapor and oxygen can be prevented from contacting the second sub-sidewall 41 of the second organic flat sublayer 40 and the first sub-sidewall 61 of the first organic flat sublayer 60, thereby effectively preventing water vapor from flowing from the side of the opening 11
  • the wall spreads to the OLED device.
  • the second sub-sidewall 41 of the second organic flat sublayer and the first sub-sidewall 61 of the first organic flat sublayer have different widths in the direction away from the central axis XX', resulting in "steps" appearing, reducing the second
  • the inorganic passivation layer 50 covers the step difference between the first sub-sidewall 61 of the first organic flat sub-layer 60 close to the opening and the second sub-side wall 41 of the second organic flat sub-layer 40 close to the opening, so as to avoid covering the first sub-sidewall.
  • An organic flat sub-layer 60 is close to the first sub-sidewall 61 of the opening and a part of the second organic flat sub-layer 40 close to the second sub-sidewall 41 of the opening.
  • the second inorganic passivation layer 50 is broken, otherwise it will be greatly weakened.
  • the second inorganic passivation layer 50 has the effect of preventing oxygen.
  • the display panel has at least one bending area 110, and the bending area 110 is usually located at four corners of the display panel 100.
  • the stretching performance of the bending area 110 needs to be better, and the stretching performance of the display screen at the corners can be enhanced when the curved screen is made (for example, at least one opening 111 is provided in the bending area 110), thereby avoiding display The screen is wrinkled.
  • the specific shape and size of the opening 111 have no special requirements, and it can be a rectangular parallelepiped (refer to FIG. 2), a cylindrical shape, or the like.
  • the number of openings in the bending zone 110 at each corner there is no special requirement for the number of openings in the bending zone 110 at each corner, and those skilled in the art can flexibly choose according to actual conditions such as requirements for stretchability of the bending zone, and there is no restriction here.
  • the number, shape, and size of the openings in different bending regions 110 may be the same or different.
  • the present disclosure does not have special requirements on the specific structure of the thin film transistor structure layer. Those skilled in the art can flexibly design according to actual conditions.
  • the thin film transistor in the thin film transistor structure layer may be a top gate structure or a bottom gate structure. In some embodiments, referring to FIG. 4 (in FIG.
  • the thin film transistor structure layer includes a buffer layer 21, which is disposed on the surface of the substrate 10; and the active layer 22 has The source layer 22 is arranged on the side of the buffer layer 21 away from the substrate 10; the first gate insulating layer 23 is arranged on the side of the buffer layer 21 away from the substrate and covers the active layer 22; the gate 24, The gate 24 is arranged on the side of the first gate insulating layer 23 away from the substrate; the second gate insulating layer 25 and the second gate insulating layer 25 are arranged on the side of the gate 24 away from the substrate, and cover the gate 24 and the exposed
  • the first gate insulating layer 23; the interlayer dielectric layer 26, which is arranged on the side of the second gate insulating layer 25 away from the substrate; the source 27 and the drain 28, the source 27 and the drain 28 are arranged on the layer
  • the intermediate dielectric layer 26 is away from the side of the substrate, and is electrically connected to the active layer 22 through via holes, respectively.
  • the aforementioned thin film transistor structure layer can also be penetrated by the opening 111, and the portion penetrated by the opening 111 is the non-thin film transistor (including the active layer, the gate, the source, and the thin film transistor) in the thin film transistor structure layer.
  • the location where the structure such as the drain is located, that is, the penetrating structure includes insulating layers such as the buffer layer 21, the first gate insulating layer 23, the second gate insulating layer 25, and the interlayer dielectric layer 26. In this way, the setting of the opening 111 will not affect the normal display of the bending area.
  • the opening 111 is arranged in the non-pixel area, that is, the opening 111 is arranged in the non-pixel area between the pixel units 113, and the arrangement of the opening 111 does not affect the layout design of the signal line area 112.
  • the OLED device is formed on the side of the second inorganic passivation layer 50 away from the second organic flat sublayer 40, so the OLED device may be formed before forming the OLED device.
  • the above-mentioned structure of the display panel can further prevent the penetration of water vapor and oxygen from the sidewall of the organic flat layer.
  • a high temperature (about 200°C) vapor deposition process can be used to fabricate the second inorganic passivation layer 50 to improve the second inorganic passivation layer 50.
  • the compactness of the passivation layer 50 in turn makes the second inorganic passivation layer 50 more effective in preventing oxygen.
  • the display panel 100 may further include: a conductive structure 70, which is disposed on a side of the first organic flat sub-layer 60 away from the substrate 10, and passes through a through hole and a thin film transistor structure layer.
  • the source or drain of the thin film transistor in is electrically connected; the pixel defining layer; and the light-emitting element, which is located on the side of the second inorganic passivation layer 50 away from the second organic flat sublayer 40.
  • the conductive structure 70 includes: a first conductive structure 71, which is located on a side of the first organic flat sublayer 60 away from the substrate 10 and extends through the first The through holes of the organic flat sublayer 60 and the first inorganic passivation layer 30 are electrically connected to the source of the thin film transistor in the thin film transistor structure layer; the second conductive structure 72 is located in the first organic flat sublayer The side of the layer 60 away from the substrate 10 and through the through holes extending through the first organic flat sublayer 60 and the first inorganic passivation layer 30 and the thin film transistor in the thin film transistor structure layer The drain is electrically connected.
  • the first conductive structure 71 may be an auxiliary power line, which is connected to a power line provided on the same layer as the source and drain of the thin film transistor to provide a working voltage to the source of the thin film transistor, which can further reduce the circuit impedance.
  • the distance between the second sub-side wall 41 and the central axis XX' is greater than the distance between the first side wall 31 and the central axis XX'
  • the distance between the first sub-side wall 61 and the The distance between the central axis XX' is greater than the distance between the first side wall 31 and the central axis XX' by 1.5 to 2.0 micrometers, for example, it can be greater than 1.6 micrometers, 1.7 micrometers, 1.8 micrometers or 1.9 micrometers.
  • the distance D2 between the second sub-sidewall 41 of the second organic flat sublayer 40 close to the opening and the central axis XX' of the opening 111 is greater than that of the first inorganic passivation layer.
  • the distance D3 between the first sidewall 31 close to the opening and the central axis XX' is greater than 3.0-4.0 micrometers (that is, the difference between D2 and D3 is 3.0-4.0 micrometers), and the first organic flat sublayer 60 is close to the opening
  • the distance D1 between the first sub-side wall 61 and the central axis XX' is 1.5 to 2.0 microns ( That is, the difference between D1 and D3 is 1.5 to 2.0 microns).
  • the recess blocking structure 42 is a groove that penetrates the second inorganic passivation layer 50 and at least part of the second organic flat sublayer 40 in a direction perpendicular to the substrate 10 .
  • the groove is arranged around the opening 111, and the second inorganic passivation layer 50 and part of the second organic flat sub-layer 40 on the side close to the opening 111 and higher than the bottom of the groove in the direction perpendicular to the substrate 10 form isolation pillars.
  • the cathode material of the integrated structure of each OLED in the normal light-emitting area and the cathode material around the opening 111 can be effectively blocked at the groove, thereby preventing water vapor and oxygen from passing through the opening.
  • the cathode material around 111 spreads to the light-emitting material of the OLED in the normal light-emitting area, which can further effectively ensure that the light-emitting material in the OLED device will not fail due to the erosion of water and oxygen.
  • the groove of the recess blocking structure 42 may not penetrate the second organic flat sublayer 40 (that is, the depth of the groove of the recess blocking structure 42 is less than the thickness of the second organic flat sublayer 40 and the thickness of the second inorganic passivation layer 50 Sum). In other examples, the grooves of the recessed blocking structure 42 may just penetrate the second organic flat sublayer 40 (that is, the depth of the grooves of the recessed blocking structure 42 is equal to the thickness of the second organic flat sublayer 40 and the second inorganic flat sublayer 40). The sum of the thickness of the passivation layer 50). Those skilled in the art can design flexibly according to actual needs.
  • the groove of the recess blocking structure 42 may penetrate the second organic flat sublayer 40 and extend to the first organic flat sublayer 60. Therefore, increasing the depth of the recess blocking structure can further ensure that the cathode material of the integrated structure of each OLED in the normal light-emitting area and the cathode material around the opening 111 are blocked at the groove.
  • the recess blocking structure 42 when fabricating the recess blocking structure 42, after forming the second inorganic passivation layer 50, the recess blocking structure 42 can be fabricated through an etching patterning process. In this way, the recess blocking structure will not be filled with the material of the second inorganic passivation layer, and the step of removing the material of the second inorganic passivation layer in the recess blocking structure 42 can also be avoided. In this way, the smaller-sized recess blocking structure 42 can block the cathode material well, thereby reducing the manufacturing cost of the recess blocking structure.
  • the inner diameter of the recessed blocking structure can be the same or inconsistent (as shown in Figures 6 and 7, the recessed blocking structure 42 is composed of the first and second segments with unequal inner diameters and connected), as long as the OLED device can be integrated into the OLED device. The luminescent material can be blocked.
  • the specific materials of the second organic flat sub-layer and the first organic flat sub-layer are not subject to special restrictions, and those skilled in the art can flexibly select conventional manufacturing materials according to actual needs.
  • the specific materials of the first inorganic passivation layer and the second inorganic passivation layer also have no special requirements, and those skilled in the art can flexibly choose according to actual conditions, such as silicon nitride, silicon oxide, or silicon oxynitride.
  • the substrate 10 may include: a rigid substrate 11 (after the display panel is subsequently produced, the rigid substrate 11 needs to be peeled and removed), and a rigid substrate 11 is disposed on the rigid substrate 11 close to the thin film transistor structure layer.
  • the first flexible substrate 12 on the side, the first barrier layer 13 provided on the side of the first flexible substrate 12 away from the rigid substrate 11, and the second barrier layer 13 provided on the side of the first barrier layer 13 away from the rigid substrate 11 The flexible substrate 14 and the second barrier layer 15 provided on the side of the second flexible substrate 14 away from the rigid substrate 11. In this way, it can be used to make a flexible display panel.
  • the opening 111 may only penetrate the second barrier layer 15. In other examples, the opening 111 may only penetrate the second barrier layer 15 and the second flexible substrate 14. In still other examples, the opening 111 may also penetrate the second barrier layer 15, the second flexible substrate 14 and the first barrier layer 13. In still other examples, the opening 111 may also penetrate the second barrier layer 15, the second flexible substrate 14, the first barrier layer 13, and the first flexible substrate 12 (refer to FIG. 8). Therefore, those skilled in the art can flexibly design the layer structure through which the opening 111 needs to penetrate according to the requirements on the stretchability of the bending zone 110.
  • the specific materials for forming the first flexible substrate and the second flexible substrate include but are not limited to polyimide (PI), and the materials for forming the first barrier layer and the second barrier layer include, but are not limited to, silicon nitride, silicon oxide, Materials such as silicon oxynitride or metal can be selected by those skilled in the art according to actual needs.
  • PI polyimide
  • the materials for forming the first barrier layer and the second barrier layer include, but are not limited to, silicon nitride, silicon oxide, Materials such as silicon oxynitride or metal can be selected by those skilled in the art according to actual needs.
  • the display panel 100 further includes a pixel defining layer 80 disposed on the side of the second inorganic passivation layer 50 away from the second organic flat sublayer 40.
  • the pixel defining layer 80 has a plurality of openings, and an anode 91 (electrically connected to the drain via a through hole), a luminescent material layer 92 and a cathode 93 are arranged in the openings in a stack. It can be seen from FIG.
  • the recess blocking structure 42 can effectively block the cathode material layer in the normal light-emitting area from the cathode material layer in the peripheral area of the opening, thereby preventing water samples from penetrating into the light-emitting material in the normal light-emitting area.
  • the size of the openings here can be larger than that of other layers on the side of the first organic flat sub-layer 60 close to the substrate 10 (for example, the first organic flat sub-layer 60).
  • the opening sizes of an inorganic passivation layer 30, the second barrier layer 15, the second flexible substrate 14, the first barrier layer 13, and the first flexible substrate 12) are as shown in FIG. 9.
  • the opening size here can be made larger than the opening size of the first organic flat sub-layer 60, as shown in FIG. 9.
  • a second inorganic passivation layer 50 is formed on the second organic flat sub-layer 40, so that the second inorganic passivation layer 50 can be along the first sub-sidewall 61 and the second organic flat sub-layer 60 of the first organic flat sub-layer.
  • the second sub-sidewall 41 of the layer 40 extends to the first inorganic passivation layer 30, thereby covering the first organic flat sub-layer 60 and the second organic flat sub-layer 40 to prevent water and oxygen from entering the first organic flat sub-layer.
  • the layer 60 and the second organic flat sublayer 40 then enter the OLED device.
  • the manufacturing method of the related structure of the display panel is the same as that of the related technology, and will not be repeated here.
  • the present disclosure provides a display device.
  • the display device includes the aforementioned display panel and a driving circuit for driving the display panel. Therefore, the OLED in the display device is not easily corroded by water vapor and oxygen, thereby improving the quality and quality of the display device.
  • the display device has all the features and advantages of the aforementioned display panel, and will not be described in detail here.
  • the display device includes the aforementioned display panel, but those skilled in the art will know that when the substrate in the display panel includes a rigid substrate, after the display panel is manufactured into a display panel, the rigid substrate needs to be removed Yes, so the display device does not include a rigid substrate.
  • the specific type of the display device has no special requirements, and those skilled in the art can flexibly choose according to actual needs.
  • the display device can be a mobile phone, a TV, a notebook, an iPad, a game console, a kindle, etc. Display function equipment and devices.
  • the display device also includes the necessary structures or components of a conventional display panel.
  • the display panel in addition to the display panel, it also includes an encapsulation layer, a glass cover, and audio Modules, camera modules, touch modules and other structures.
  • the encapsulation layer can also encapsulate the cathode of the OLED exposed from the opening, thereby further avoiding Water vapor and oxygen enter the cathode of the OLED.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined with “first” and “second” may explicitly or implicitly include one or more of these features.
  • “plurality” means two or more than two, unless otherwise specifically defined.

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Abstract

本公开提供了显示面板和显示装置。该显示面板包括至少一个开孔，并且还包括：基板；薄膜晶体管结构层；第一无机钝化层；有机平坦层，其设置在第一无机钝化层的远离薄膜晶体管结构层的一侧；第二无机钝化层，其设置在有机平坦层的远离第一无机钝化层的一侧。第二无机钝化层沿有机平坦层的靠近至少一个开孔的一侧朝向第一无机钝化层延伸、并包覆有机平坦层的靠近至少一个开孔的一侧的暴露部分。

Description

显示面板和显示装置
相关申请的交叉引用
本申请要求于2020年2月17日在中国知识产权局提交的No.202010097539.9的中国专利申请的优先权，该中国专利申请的全部内容通过引用合并于此。
技术领域
本公开涉及显示技术领域，具体的，涉及一种显示面板和显示装置。
背景技术
曲面显示屏在其四个角落的弯曲处需要进行拉伸，以防此处的显示屏发生褶皱，影响此处显示屏的显示质量。但是，显示屏的拉伸性较差，为了提高显示屏的可拉伸性，需要对四个角落处的弯曲部位的显示屏进行打孔，以提高四角处显示屏的拉伸性。然而，打孔后，水汽就会很容易的从孔的侧壁蔓延至OLED(Organic Light-Emitting Diode)器件，导致OLED失效，进而损坏OLED器件。
因此，关于显示屏中显示面板的研究有待深入。
发明内容
根据本公开的一个方面，提供了一种显示面板，具有至少一个开孔，所述显示面板包括：基板；薄膜晶体管结构层，所述薄膜晶体管结构层位于所述基板上；第一无机钝化层，一无机钝化层位于所述薄膜晶体管结构层的远离所述基板的一侧；有机平坦层，所述有机平坦层位于所述第一无机钝化层的远离所述薄膜晶体管结构层的一侧；第二无机钝化层，所述第二无机钝化层位于所述有机平坦层的远离所述第一无机钝化层的一侧，其中，所述至少一个开孔至少贯通所述第一无机钝化层、所述有机平坦层和所述第二无机钝化层，并且所述第二无机钝化层沿所述有机平坦层的靠近所述至少一个开孔的一侧朝向所述第一无机钝化层延伸、并包覆所述有机平坦层的靠近所述至少一个开孔的一侧的暴露部分。
在一些实施例中，所述第一无机钝化层具有靠近所述至少一个开孔的第一侧壁，所述有机平坦层具有靠近所述至少一个开孔的第二侧壁，所述第二侧壁相对于所述第一侧壁远离所述至少一个开孔的沿垂直于所述基板方向的中心轴。
在一些实施例中，所述第二侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大1.5～2.0微米。
在一些实施例中，所述有机平坦层包括第一有机平坦子层和第二有机平坦子层，其中，所述第一有机平坦子层位于所述第一无机钝化层的远离所述薄膜晶体管结构层的一侧，所 述第二有机平坦子层位于所述第一有机平坦子层的远离所述第一无机钝化层的一侧，所述第一有机平坦子层具有靠近所述至少一个开孔的第一子侧壁，所述第二有机平坦子层具有靠近所述至少一个开孔的第二子侧壁。
在一些实施例中，所述第一子侧壁与所述中心轴之间的距离不等于所述第二子侧壁与所述中心轴之间的距离。
在一些实施例中，所述第二子侧壁相对于所述第一子侧壁远离所述至少一个开孔的沿垂直于所述基板方向的中心轴。
在一些实施例中，所述第二子侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大3.0～4.0微米。
在一些实施例中，所述第一子侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大1.5～2.0微米。
在一些实施例中，所述显示面板还包括围绕所述至少一个开孔的凹槽，所述凹槽沿垂直于所述基板的方向贯穿所述第二无机钝化层以及至少部分所述第二有机平坦子层。
在一些实施例中，所述显示面板还包括围绕所述至少一个开孔的凹槽，所述凹槽沿垂直于所述基板的方向贯穿所述第二无机钝化层、所述第二有机平坦子层以及至少部分所述第一有机平坦子层。
在一些实施例中，所述显示面板还包括：第一导电结构，所述第一导电结构位于所述第一有机平坦子层的远离所述基板的一侧，且通过延伸穿过所述第一有机平坦子层和所述第一无机钝化层的通孔与所述薄膜晶体管结构层中的薄膜晶体管的源极电连接；第二导电结构，所述第二导电结构位于所述第一有机平坦子层的远离所述基板的一侧，且通过延伸穿过所述第一有机平坦子层和所述第一无机钝化层的通孔与所述薄膜晶体管结构层中的薄膜晶体管的漏极电连接；像素界定层，所述像素界定层位于所述第二无机钝化层远离所述第二有机平坦子层的一侧，具有暴露所述第二无机钝化层的至少一个开口；以及发光元件，所述发光元件包括第一极、发光层以及第二极，所述第一极和所述发光层位于所述至少一个开口中，所述第二极覆盖所述发光层以及暴露的像素界定层，并且所述第一极通过延伸穿过所述第二无机钝化层和所述第二有机平坦子层的通孔与所述第二导电结构电连接。
在一些实施例中，所述基板包括依次设置的第一柔性衬底、第一阻隔层、第二柔性衬底和第二阻隔层，并且所述薄膜晶体管结构层位于所述第二阻隔层的远离所述第二柔性衬底的一侧，其中，所述至少一个开孔还满足以下条件的任意一种：所述至少一个开孔还贯穿所述第二阻隔层，或所述至少一个开孔还贯穿所述第二阻隔层和所述第二柔性衬底；或所述至少一个开孔还贯穿所述第二阻隔层、所述第二柔性衬底以及所述第一阻隔层；或所述至少一个开孔还贯穿所述第二阻隔层、所述第二柔性衬底、所述第一阻隔层以及所述 第一柔性衬底。
在一些实施例中，所述显示面板包括至少一个弯折区，其中，所述至少一个开孔位于所述可弯折区中。
在一些实施例中，所述至少一个弯折区位于所述显示面板的角落位置。
根据本公开的一个方面，提供了一种显示装置，该显示装置包括以上所述的显示面板以及驱动所述显示面板的驱动电路。
附图说明
图1是本公开一个实施例中显示面板的平面图；
图2是图1中弯折区的放大图；
图3是本公开一个实施例中图2中沿AA’的截面图；
图4是本公开一个实施例中图2中沿AA’的截面图；
图5是本公开一个是实例中显示面板的结构示意图；
图6是本公开一个是实例中显示面板的结构示意图；
图7是本公开一个是实例中显示面板的结构示意图；
图8是本公开一个是实例中显示面板的结构示意图；以及
图9是本公开一个是实例中显示面板的结构示意图。
具体实施方式
下面详细描述本公开的实施例。下面描述的实施例是示例性的，仅用于解释本公开，而不能理解为对本公开的限制。实施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。
在一个方面，本公开提供了一种显示面板。根据本公开的实施例，参照图1(图1为显示面板100的展开示意图)和图2(图2为图1中某一弯折区110的放大图)，所述显示面板100具有至少一个弯折区110，在所述弯折区110中具有至少一个开孔111。参照图3(图3为图2中沿AA’的截面图)，所述显示面板100包括：基板10；薄膜晶体管结构层，薄膜晶体管结构层设置在所述基板10上；第一无机钝化层(PVX)30，第一无机钝化层30设置在薄膜晶体管结构层的远离基板10的一侧；有机平坦层(PLN)20，有机平坦层20设置在第一无机钝化层30的远离所述基板10的一侧；第二无机钝化层50，第二无机钝化层50设置在有机平坦层20的远离基板10的一侧。如图3所示，所述至少一个开孔111至少贯通所述第一无机钝化层30、所述有机平坦层20和所述第二无机钝化层50。并且，所述第二无机钝化层50沿所述有机平坦层20的靠近所述至少一个开孔111的一侧朝向所述第 一无机钝化层30延伸、并包覆所述有机平坦层20的靠近所述至少一个开孔的一侧的暴露部分。
由于水汽和氧比较容易渗入到有机材料中，会导致水汽和氧通过有机平坦层的暴露于开孔111的部分进入有机平坦层，进而通过有机平坦层蔓延至OLED器件中(由于第二无机钝化层是图案化的结构，无法阻止水汽和氧向OLED器件的蔓延)。因此，在本公开中通过致密的第二无机钝化层50将有机平坦层20包覆起来可以阻止水汽和氧向OLED器件的蔓延，从而避免水汽和氧损坏OLED器件，提高显示面板的寿命和显示质量。
根据本公开的实施例，显示面板还包括围绕至少一个开孔的作为凹陷阻断结构的凹槽(凹槽的靠近开孔111的一侧可形成隔离柱，如图6-图9所示)。通常，围绕所述至少一个开孔设置的凹槽会阻止水汽和氧通过暴露于开孔111的OLED的一部分(例如阴极，显示面板的各个OLED的阴极通常为一体结构，并且在凹槽处断开设置)而进入OLED器件中的有机发光材料层，进而损坏OLED器件。在该凹槽阻断阴极连接失效的情况下，即OLED器件的阴极在该凹槽中连接的情况下，会使得OLED器件的阴极与其下的有机材料层(例如有机平坦层)接触，进而使得水汽和氧通过有机平坦层进入OLED器件的阴极，进而到达OLED器件的发光层，影响OLED器件发光，损坏OLED器件。在本公开中，通过将所述第二无机钝化层50设置为沿所述有机平坦层20的靠近所述至少一个开孔11的一侧朝向所述第一无机钝化层30延伸、并包覆所述有机平坦层20的靠近所述至少一个开孔11的一侧的暴露部分，即第二无机钝化层50和第一无机钝化层30将有机平坦层20包覆起来而不暴露于至少一个开孔11，可以使得水汽和氧不能通过致密的第二无机钝化层50和第一无机钝化层30进入有机平坦层20中。这样，即使凹槽阻断阴极连接失效，水汽和氧也不能通过致密的第二无机钝化层50和第一无机钝化层30进入有机平坦层20以及进而达到OLED器件，从而保护OLED器件，提高显示面板的寿命和显示质量。
根据本公开的实施例，如图3所示，所述第一无机钝化层30具有靠近所述至少一个开孔11的第一侧壁31，所述有机平坦层20具有靠近所述至少一个开孔11的第二侧壁21，所述第二侧壁相对于所述第一侧壁31远离所述至少一个开孔11的沿垂直于所述基板10方向的中心轴XX’。也就是说，在本公开中，通过使有机平坦层20靠近开孔111的第二侧壁21与中心轴XX’之间的距离d1大于第一无机钝化层30靠近开孔111的第一侧壁31与中心轴XX’之间的距离d3，即有机平坦层20与第一无机钝化层30在靠近开孔的一侧形成类似“台阶”结构，使得第二无机钝化层50沿有机平坦层20的靠近至少一个开孔111的一侧延伸到达该“台阶”，从而将有机平坦层20包覆起来。通过设计该“台阶”，有利于使得第二无机钝化层50落在该“台阶”而将有机平坦层20包覆起来。
根据本公开的实施例，如图3所示，所述第二侧壁21与所述中心轴XX’之间的距离比 所述第一侧壁31与所述中心轴XX’之间的距离大1.5～2.0微米。也就是说，该“台阶”沿远离中心轴XX’方向具有1.5～2.0微米的宽度。可选地，该宽度可以为1.6微米、1.7微米、1.8微米或1.9微米，也可以为其它所需的宽度值。
根据本公开的实施例，如图4所示，所述有机平坦层20包括第一有机平坦子层60和第二有机平坦子层40。所述第一有机平坦子层60位于所述第一无机钝化层30的远离所述薄膜晶体管结构层的一侧，所述第二有机平坦子层40位于所述第一有机平坦子层60的远离所述第一无机钝化层30的一侧。所述第一有机平坦子层60具有靠近所述至少一个开孔111的第一子侧壁61，所述第二有机平坦子层40具有靠近所述至少一个开孔111的第二子侧壁41。第一子侧壁61与中心轴XX’之间的距离不等于第二子侧壁41与中心轴XX’之间的距离。具体地，第二子侧壁41相对于第一子侧壁61可以远离至少一个开孔111的沿垂直于基板10方向的中心轴XX’。
如图4所示，通过使第一有机平坦子层60靠近开孔111的第一子侧壁61与中心轴XX’之间的距离D1大于第一无机钝化层30靠近开孔的第一侧壁31与中心轴XX’之间的距离D3，且第二有机平坦子层40靠近开孔111的第二子侧壁41与开孔111的中心轴之间的距离D2大于第一有机平坦子层60靠近开孔的第一子侧壁61与中心轴之间的距离D1(即相对第一无机钝化层的第一侧壁31，使得第一有机平坦子层60和第二有机平坦子层40依次内缩)，并使第二无机钝化层50覆盖第二有机平坦子层40的第二子侧壁41和第一有机平坦子层60的第一子侧壁61。
也就是说，第一有机平坦子层60与第一无机钝化层30形成一“台阶”结构，第二有机平坦子层40与第一有机平坦子层60形成另一“台阶”结构。第二无机钝化层50沿着上述两个“台阶”延伸而将第一有机平坦子层60和第二有机平坦子层40包覆起来。如此，可以防止水汽和氧接触到第二有机平坦子层40的第二子侧壁41和第一有机平坦子层60的第一子侧壁61，进而有效地防止水汽从开孔11的侧壁蔓延至OLED器件。而且，第二有机平坦子层的第二子侧壁41和第一有机平坦子层的第一子侧壁61沿远离中心轴XX’方向的宽度不同导致出现“台阶”，减小了第二无机钝化层50在覆盖第一有机平坦子层60靠近开孔的第一子侧壁61和第二有机平坦子层40靠近开孔的第二子侧壁41时的段差，以避免覆盖第一有机平坦子层60靠近开孔的第一子侧壁61和第二有机平坦子层40靠近开孔的第二子侧壁41的部分第二无机钝化层50发生断裂，否则会大大减弱第二无机钝化层50的防水氧的效果。
根据本公开的实施例，参照图1，该显示面板具有至少一个弯折区110，弯折区110通常位于显示面板100的四个角落处。如此，需要弯折区110的拉伸性能较佳，在制作曲面屏时可以增强角落处的显示屏的拉伸性能(例如在弯折区110中设置至少一个开孔111)， 从而可以避免显示屏发生褶皱。开孔111的具体形状和尺寸没有特殊要求，其可以为长方体(参照图2)、圆柱形等形状。另外，每个角落处的弯折区110中的开孔的数量也没有特殊要求，本领域技术人员可以根据对弯折区拉伸性的要求等实际情况灵活选择，在此不做限制要求。而且，不同的弯折区110中开孔的数量、形状以及尺寸可以相同，也可以不同。
根据本公开的实施例，本公开对薄膜晶体管结构层的具体结构没有特殊要求，本领域技术人员可以根据实际情况灵活设计，薄膜晶体管结构层中的薄膜晶体管可以为顶栅结构或底栅结构。在一些实施例中，参照图4(图4中以顶栅结构的薄膜晶体管为例)，薄膜晶体管结构层包括缓冲层21，缓冲层21设置在基板10的表面上；有源层22，有源层22设置在缓冲层21远离基板10的一侧；第一栅绝缘层23，第一栅绝缘层23设置在缓冲层21远离基板的一侧，且覆盖有源层22；栅极24，栅极24设置在第一栅绝缘层23远离基板的一侧；第二栅绝缘层25，第二栅绝缘层25设置在栅极24远离基板的一侧，且覆盖栅极24和暴露出的第一栅绝缘层23；层间介质层26，层间介质层26设置在第二栅绝缘层25远离基板的一侧；源极27和漏极28，源极27和漏极28设置在层间介质层26远离基板的一侧，且分别通过通孔与有源层22电连接。
需要说明的是，前面所述的薄膜晶体管结构层也可以被开孔111贯穿，而被开孔111贯穿的部位为薄膜晶体管结构层中非薄膜晶体管(包括有源层、栅极、源极和漏极等结构)所处的位置，即贯穿的结构包括缓冲层21、第一栅绝缘层23、第二栅绝缘层25以及层间介质层26等绝缘层。如此，开孔111的设置不会影响弯折区的正常显示。如图2所示，开孔111设置在非像素区域，即开孔111设置在像素单元113之间的非像素区域，而且开孔111的设置不会影响信号线区域112的布局设计。
根据本公开的实施例，在形成第二无机钝化层50之后，在第二无机钝化层50的远离第二有机平坦子层40的一侧形成OLED器件，所以可以在形成OLED器件之前形成上述显示面板的结构，进而可以预防水汽和氧从有机平坦层的侧壁渗入。而且，正是由于第二无机钝化层50是在形成OLED器件之前形成的，所以可以采用高温(约200℃左右)气相沉积工艺来制作第二无机钝化层50，以此提高第二无机钝化层50的致密性，进而使得第二无机钝化层50的防水氧的效果更佳。
根据本公开的实施例，参照图5，显示面板100还可以包括：导电结构70，导电结构70设置在第一有机平坦子层60远离基板10的一侧，且通过通孔与薄膜晶体管结构层中的薄膜晶体管的源极或漏极电连接；像素限定层；以及发光元件，其位于第二无机钝化层50远离第二有机平坦子层40的一侧。具体地，如图8所示，导电结构70包括：第一导电结构71，其位于所述第一有机平坦子层60的远离所述基板10的一侧，且通过延伸穿过所述第一有机平坦子层60和所述第一无机钝化层30的通孔与所述薄膜晶体管结构层中的薄膜 晶体管的源极电连接；第二导电结构72，其位于所述第一有机平坦子层60的远离所述基板10的一侧，且通过延伸穿过所述第一有机平坦子层60和所述第一无机钝化层30的通孔与所述薄膜晶体管结构层中的薄膜晶体管的漏极电连接。第一导电结构71可以为辅助电源线，其与薄膜晶体管的源漏极同层设置的电源线连接，向薄膜晶体管的源极提供工作电压，如此可以进一步降低电路阻抗。
根据本公开的实施例，参照图4和图5，所述第二子侧壁41与所述中心轴XX’之间的距离比所述第一侧壁31与所述中心轴XX’之间的距离大3.0～4.0微米，例如，可以大3.1微米、3.2微米、3.3微米、3.4微米、3.5微米、3.6微米、3.7微米、3.8微米或3.9微米；所述第一子侧壁61与所述中心轴XX’之间的距离比所述第一侧壁31与所述中心轴XX’之间的距离大1.5～2.0微米，例如可以大1.6微米、1.7微米、1.8微米或1.9微米。具体地，如图4和图5所示，第二有机平坦子层40靠近开孔的第二子侧壁41与开孔111的中心轴XX’之间的距离D2比第一无机钝化层30靠近开孔的第一侧壁31与中心轴XX’之间的距离D3大3.0～4.0微米(即D2与D3的差值为3.0～4.0微米)，第一有机平坦子层60靠近开孔的第一子侧壁61与中心轴XX’之间的距离D1比第一无机钝化层30靠近开孔的第一侧壁31与中心轴XX’之间的距离D3大1.5～2.0微米(即D1与D3的差值为1.5～2.0微米)。由此，不仅可以很好的保证第二有机平坦子层40的第二子侧壁41和第一有机平坦子层60的第一子侧壁61沿远离中心轴XX’方向具有不同的宽度以形成“台阶”，且不会使得开孔111的尺寸过大。
根据本公开的实施例，参照图6和图7，凹陷阻断结构42为凹槽，该凹槽沿垂直基板10的方向贯穿第二无机钝化层50以及至少部分第二有机平坦子层40。该凹槽围绕开孔111设置，并且靠近开孔111一侧的沿垂直于基板10方向高于凹槽底部的第二无机钝化层50以及部分第二有机平坦子层40形成隔离柱。由此，在后续制作OLED器件时，可以有效地将正常发光区域的各个OLED的一体结构的阴极与开孔111周边的阴极材料在该凹槽处阻断开，从而避免水汽和氧由开孔111周边的阴极材料蔓延至正常发光区域的OLED的发光材料中，进而可以进一步的有效保证OLED器件中发光材料不会因水氧的侵蚀而失效。
凹陷阻断结构42的凹槽可以不贯穿第二有机平坦子层40(即凹陷阻断结构42的凹槽的深度小于第二有机平坦子层40的厚度和第二无机钝化层50的厚度之和)。在另一些实例中，凹陷阻断结构42的凹槽可以恰好贯穿第二有机平坦子层40(即凹陷阻断结构42的凹槽的深度等于第二有机平坦子层40的厚度和第二无机钝化层50的厚度之和)。本领域技术人员根据实际需求灵活设计即可。
根据本公开的实施例，参照图7，凹陷阻断结构42的凹槽可以贯穿第二有机平坦子层40，并延伸至第一有机平坦子层60。由此，加大凹陷阻断结构的深度，可以更进一步的确 保将正常发光区域的各个OLED的一体结构的阴极与开孔111周边的阴极材料在该凹槽处阻断开。
参照图6和图7，在制作凹陷阻断结构42时，可以在形成第二无机钝化层50之后，通过刻蚀图案化工艺制作凹陷阻断结构42。如此，凹陷阻断结构中不会填充有第二无机钝化层的材料，也可以避免将凹陷阻断结构42中的第二无机钝化层的材料去除的步骤。如此，较小尺寸的凹陷阻断结构42就可以很好的将阴极材料阻断，进而降低凹陷阻断结构的制作成本。
进一步的，凹陷阻断结构的具体形状没有特殊要求，本领域技术人员可以根据实际情况灵活选择。凹陷阻断结构的内径可以一致，也可以不一致(如图6和图7所示，凹陷阻断结构42由内径不等且联通的第一段和第二段构成)，只要可以将OLED器件中的发光材料阻断开即可。
根据本公开的实施例，第二有机平坦子层和第一有机平坦子层的具体材料也没有特殊限制要求，本领域技术人员根据实际需求灵活选择常规的制作材料即可。第一无机钝化层和第二无机钝化层的具体材料也没有特殊要求，本领域技术人员可以根据实际情况灵活选择，比如可以为氮化硅、氧化硅或氮氧化硅等材料。
根据本公开的实施例，基板10的具体结构没有特殊要求，本领域技术人员可以根据对基板性能的要求，灵活设置包含有柔性衬底、阻隔层等结构的基板。在一些实施例中，参照图8，基板10可包括：刚性衬底11(在后续制作显示面板后，该刚性衬底11需要剥离去除)，设置在刚性衬底11靠近薄膜晶体管结构层的一侧的第一柔性衬底12，设置在第一柔性衬底12远离刚性衬底11的一侧的第一阻隔层13，设置在第一阻隔层13远离刚性衬底11的一侧的第二柔性衬底14，以及设置在第二柔性衬底14远离刚性衬底11的一侧的第二阻隔层15。由此，可以实现可以用于制作柔性显示面板。
在一些实例中，开孔111还可以仅贯穿第二阻隔层15。在另一些实例中，开孔111也可以只贯穿第二阻隔层15和第二柔性衬底14。在又一些实例中，开孔111还可以贯穿第二阻隔层15、第二柔性衬底14以及第一阻隔层13。在又一些实例中，开孔111还可以贯穿第二阻隔层15、第二柔性衬底14、第一阻隔层13以及第一柔性衬底12(参照图8)。由此，本领域技术人员可以根据对弯折区110的拉伸性的要求，灵活设计开孔111所需贯穿的层结构。
形成第一柔性衬底和第二柔性衬底的具体材料包括但不限于聚酰亚胺(PI)，形成第一阻隔层和第二阻隔层的材料包括但不限于氮化硅、氧化硅、氮氧化硅或金属等材料，本领域技术人员根据实际需求进行选择即可。
本领域技术人员可以理解，参照图9，该显示面板100还包括设置在第二无机钝化层 50的远离第二有机平坦子层40一侧的像素界定层80。像素界定层80具有多个开口，在开口中设置有依次层叠设置的阳极91(通过通孔与漏极电连接)、发光材料层92和阴极93。由图9可见，凹陷阻断结构42可以有效地将正常发光区的阴极材料层与开孔周边区域的阴极材料层阻断开来，进而防止水样渗入到正常发光区域的发光材料中。
在制作上述显示面板时，在第一有机平坦子层60上开孔时，可以使得此处的开孔尺寸大于该第一有机平坦子层60的靠近基板10一侧的其它层(例如，第一无机钝化层30、第二阻隔层15、第二柔性衬底14、第一阻隔层13以及第一柔性衬底12)的开孔尺寸，如图9所示。在第二有机平坦子层40上开孔时，可以使得此处的开孔尺寸大于该第一有机平坦子层60的开孔尺寸，如图9所示。然后，在第二有机平坦子层40上形成第二无机钝化层50，使得第二无机钝化层50可沿第一有机平坦子层60的第一子侧壁61和第二有机平坦子层40的第二子侧壁41延伸到达第一无机钝化层30，从而将第一有机平坦子层60和第二有机平坦子层40包覆起来，以防止水氧进入第一有机平坦子层60和第二有机平坦子层40进而进入OLED器件。该显示面板的相关结构的制作方法与相关技术相同，此处不再赘述。
在又一方面，本公开提供了一种显示装置。根据本公开的实施例，该显示装置包括前面所述的显示面板以及用于驱动所述显示面板的驱动电路。由此，该显示装置中的OLED不易被水汽和氧侵蚀，进而提高显示装置的质量和品质。本领域技术人员可以理解，该显示装置具有前面所述的显示面板的所有特征和优点，在此不再详细赘述。
需要说明的是，显示装置包括前面所述的显示面板，但是本领域技术人员可知，当该显示面板中的基板包括刚性衬底时，在显示面板制作成显示面板之后，刚性衬底是需要去除的，所以该显示装置中并不包括刚性衬底。
根据本公开的实施例，该显示装置的具体种类没有特殊要求，本领域技术人员可以根据实际需求灵活选择，比如，该显示装置可以为手机、电视、笔记本、iPad、游戏机、kindle等一切具有显示功能的设备和装置。
本领域技术人员可以理解，该显示装置除了前面所述的显示面板，还包括常规显示面板所必备的结构或部件，以手机为例，除了显示面板，还包括封装层、玻璃盖板、音频模组、摄像模组、触控模组等结构。在该凹陷阻断结构阻断阴极连接失效的情况下，即OLED器件的阴极在该凹陷阻断结构中连接的情况下，封装层还可以封装从开孔暴露出的OLED的阴极，从而进一步避免水汽和氧进入OLED的阴极。
在本公开的描述中，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本公开的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本公开的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本公开的限制，本领域的普通技术人员在本公开的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (15)

  1. 一种显示面板，具有至少一个开孔，所述显示面板包括：
    基板；
    薄膜晶体管结构层，所述薄膜晶体管结构层位于所述基板上；
    第一无机钝化层，所述第一无机钝化层位于所述薄膜晶体管结构层的远离所述基板的一侧；
    有机平坦层，所述有机平坦层位于所述第一无机钝化层的远离所述薄膜晶体管结构层的一侧；
    第二无机钝化层，所述第二无机钝化层位于所述有机平坦层的远离所述第一无机钝化层的一侧，
    其中，所述至少一个开孔至少贯通所述第一无机钝化层、所述有机平坦层和所述第二无机钝化层，并且所述第二无机钝化层沿所述有机平坦层的靠近所述至少一个开孔的一侧朝向所述第一无机钝化层延伸、并包覆所述有机平坦层的靠近所述至少一个开孔的一侧的暴露部分。
  2. 根据权利要求1所述的显示面板，其中，所述第一无机钝化层具有靠近所述至少一个开孔的第一侧壁，所述有机平坦层具有靠近所述至少一个开孔的第二侧壁，所述第二侧壁相对于所述第一侧壁远离所述至少一个开孔的沿垂直于所述基板方向的中心轴。
  3. 根据权利要求2所述的显示面板，其中，所述第二侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大1.5～2.0微米。
  4. 根据权利要求2所述的显示面板，其中，所述有机平坦层包括第一有机平坦子层和第二有机平坦子层，其中，所述第一有机平坦子层位于所述第一无机钝化层的远离所述薄膜晶体管结构层的一侧，所述第二有机平坦子层位于所述第一有机平坦子层的远离所述第一无机钝化层的一侧，所述第一有机平坦子层具有靠近所述至少一个开孔的第一子侧壁，所述第二有机平坦子层具有靠近所述至少一个开孔的第二子侧壁。
  5. 根据权利要求4所述的显示面板，其中，所述第一子侧壁与所述中心轴之间的距离不等于所述第二子侧壁与所述中心轴之间的距离。
  6. 根据权利要求5所述的显示面板，其中，所述第二子侧壁相对于所述第一子侧壁远离所述至少一个开孔的沿垂直于所述基板方向的中心轴。
  7. 根据权利要求6所述的显示面板，其中，所述第二子侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大3.0～4.0微米。
  8. 根据权利要求7所述的显示面板，其中，所述第一子侧壁与所述中心轴之间的距离比所述第一侧壁与所述中心轴之间的距离大1.5～2.0微米。
  9. 根据权利要求4所述的显示面板，还包括围绕所述至少一个开孔的凹槽，所述凹槽沿垂直于所述基板的方向贯穿所述第二无机钝化层以及至少部分所述第二有机平坦子层。
  10. 根据权利要求4所述的显示面板，还包括围绕所述至少一个开孔的凹槽，所述凹槽沿垂直于所述基板的方向贯穿所述第二无机钝化层、所述第二有机平坦子层以及至少部分所述第一有机平坦子层。
  11. 根据权利要求4所述的显示面板，还包括：
    第一导电结构，所述第一导电结构位于所述第一有机平坦子层的远离所述基板的一侧，且通过延伸穿过所述第一有机平坦子层和所述第一无机钝化层的通孔与所述薄膜晶体管结构层中的薄膜晶体管的源极电连接；
    第二导电结构，所述第二导电结构位于所述第一有机平坦子层的远离所述基板的一侧，且通过延伸穿过所述第一有机平坦子层和所述第一无机钝化层的通孔与所述薄膜晶体管结构层中的薄膜晶体管的漏极电连接；
    像素界定层，所述像素界定层位于所述第二无机钝化层远离所述第二有机平坦子层的一侧，具有暴露所述第二无机钝化层的至少一个开口；以及
    发光元件，所述发光元件包括第一极、发光层以及第二极，所述第一极和所述发光层位于所述至少一个开口中，所述第二极覆盖所述发光层以及暴露的像素界定层，并且所述第一极通过延伸穿过所述第二无机钝化层和所述第二有机平坦子层的通孔与所述第二导电结构电连接。
  12. 根据权利要求1所述的显示面板，其中，所述基板包括依次设置的第一柔性衬底、第一阻隔层、第二柔性衬底和第二阻隔层，并且所述薄膜晶体管结构层位于所述第二阻隔 层的远离所述第二柔性衬底的一侧，
    其中，所述至少一个开孔还满足以下条件的任意一种：
    所述至少一个开孔还贯穿所述第二阻隔层，或
    所述至少一个开孔还贯穿所述第二阻隔层和所述第二柔性衬底；或
    所述至少一个开孔还贯穿所述第二阻隔层、所述第二柔性衬底以及所述第一阻隔层；或
    所述至少一个开孔还贯穿所述第二阻隔层、所述第二柔性衬底、所述第一阻隔层以及所述第一柔性衬底。
  13. 根据权利要求1所述的显示面板，包括至少一个弯折区，其中，所述至少一个开孔位于所述可弯折区中。
  14. 根据权利要求13所述的显示面板，其中，所述至少一个弯折区位于所述显示面板的角落位置。
  15. 一种显示装置，包括权利要求1～14中任一项所述的显示面板以及驱动所述显示面板的驱动电路。
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CN111653595B (zh) * 2020-06-15 2023-01-24 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示面板
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CN113838398B (zh) * 2020-06-24 2023-07-18 京东方科技集团股份有限公司 显示面板、显示装置
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