WO2020062410A1 - 有机发光二极管显示器及其制作方法 - Google Patents

有机发光二极管显示器及其制作方法 Download PDF

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Publication number
WO2020062410A1
WO2020062410A1 PCT/CN2018/113256 CN2018113256W WO2020062410A1 WO 2020062410 A1 WO2020062410 A1 WO 2020062410A1 CN 2018113256 W CN2018113256 W CN 2018113256W WO 2020062410 A1 WO2020062410 A1 WO 2020062410A1
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Prior art keywords
layer
light emitting
organic light
emitting diode
inorganic
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PCT/CN2018/113256
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English (en)
French (fr)
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唐岳军
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武汉华星光电技术有限公司
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Priority to US16/311,680 priority Critical patent/US10797122B2/en
Publication of WO2020062410A1 publication Critical patent/WO2020062410A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80516—Anodes combined with auxiliary electrodes, e.g. ITO layer combined with metal lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to the technical field of displays, and in particular, to an organic light emitting diode (OLED) display and a manufacturing method thereof.
  • OLED organic light emitting diode
  • OLED Organic light emitting diode
  • the structure of an OLED display mainly includes an OLED light-emitting element.
  • the OLED light-emitting element is composed of an anode, a cathode, and an organic light-emitting material provided at an intermediate layer between the anode and the cathode.
  • a packaging step is required for the OLED light-emitting element to prevent water vapor / oxygen from entering the OLED light-emitting element and damage the life of the display.
  • the packaging methods generally include two methods of cover plate packaging and thin film packaging.
  • the prior art thin film encapsulation method still cannot achieve a good technical effect of blocking water vapor / oxygen from entering the OLED light emitting element.
  • An object of the present invention is to provide an organic light emitting diode display and a manufacturing method thereof, so as to solve the technical problem of poor effect of blocking water vapor / oxygen from entering the OLED light emitting element in the prior art.
  • an organic light emitting diode display including:
  • a thin film transistor element disposed on the substrate, wherein a gate, a source electrode and a drain electrode of the thin film transistor element are separated by an inorganic insulating layer;
  • a pixel-defining layer disposed on the flat layer, the pixel-defining layer defining a plurality of pixels, each pixel having a plurality of sub-pixels;
  • An organic light emitting diode element disposed on the flat layer and the pixel defining layer;
  • one or more inorganic materials in the inorganic insulating layer, the flat layer, the pixel defining layer and the encapsulation layer, and a cathode of the organic light emitting diode element surround each sub-pixel of the organic light emitting diode display. , Per pixel, or multiple pixels.
  • the inorganic material is silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide.
  • the pixel defining layer is formed of an inorganic material, the pixel defining layer has a first plug, and the first plug is connected to the inorganic insulating layer through a via in the flat layer;
  • the organic light emitting diode display further includes a first connection structure, the first connection structure is connected to the inorganic insulating layer through a via in the flat layer, and the first connection structure is connected to the organic light emitting diode element.
  • Anodes are of the same material;
  • the pixel defining layer is formed of an organic material;
  • the organic light emitting diode display further includes a first connection structure, and the first connection structure is connected to the inorganic insulating layer through a via in the flat layer, and the first The connection structure is the same material as the anode of the organic light emitting diode element;
  • the cathode of the organic light emitting diode element has a second connection structure, and the second connection structure is connected to the first through a via in the pixel defining layer.
  • the pixel defining layer is formed of an organic material; the flat layer is composed of an organic sub-layer and an inorganic sub-layer, and the inorganic sub-layer of the flat layer is disposed on the organic sub-layer of the flat layer; the organic light-emitting
  • the cathode of the diode element has a third connection structure that is connected to the inorganic sub-layer of the flat layer through a via in the pixel-defining layer; or
  • the pixel defining layer is composed of an organic sublayer and an inorganic sublayer, and the organic sublayer of the pixel defining layer is disposed on the inorganic sublayer of the pixel defining layer; the inorganic sublayer of the pixel defining layer does not have Or having a second plug connected to the inorganic insulating layer through a via in the flat layer; an anode of the organic light emitting diode element is disposed on the flat layer; the organic light emitting
  • the cathode of the diode element has a fourth connection structure, and the fourth connection structure is connected to the inorganic sub-layer of the pixel-defining layer through a via in the pixel-defining layer.
  • the organic material is an acrylic organic compound, polyamide, or polyimide.
  • the inorganic insulating layer includes:
  • a buffer layer disposed on the substrate
  • a gate insulating layer disposed on the buffer layer
  • An interlayer insulating layer disposed on the gate insulating layer
  • the encapsulation layer has a stacked structure composed of a plurality of inorganic sub-layers and a plurality of organic sub-layers.
  • the invention also provides a method for manufacturing an organic light emitting diode display, which includes the following steps:
  • the pixel defining layer defining a plurality of pixels, each pixel having a plurality of sub-pixels
  • one or more inorganic materials in the inorganic insulating layer, the flat layer, the pixel defining layer and the encapsulation layer, and a cathode of the organic light emitting diode element surround each sub-pixel of the organic light emitting diode display. , Per pixel, or multiple pixels.
  • the inorganic material is silicon oxide, silicon nitride, silicon oxynitride, or aluminum oxide.
  • the method further includes:
  • the pixel defining layer Forming the pixel defining layer with an inorganic material, the pixel defining layer having a first plug, the first plug being connected to the inorganic insulating layer through a via in the flat layer;
  • a first connection structure is formed, the first connection structure is connected to the inorganic insulating layer through a via in the flat layer, and the first connection structure and the anode of the organic light emitting diode element are of the same material and are formed simultaneously ;
  • Forming the pixel defining layer with an organic material Forming the pixel defining layer with an organic material; forming a first connection structure, the first connection structure being connected to the inorganic insulation layer through a via in the flat layer, the first connection structure and the organic light emitting
  • the anodes of the diode elements have the same material and are formed simultaneously; and the cathode of the organic light emitting diode element is formed so that the cathode of the organic light emitting diode element has a second connection structure, and the second connection structure passes through the pixel defining layer. Connected to the upper surface of the first connection structure through a via;
  • Forming the pixel defining layer with an organic material; forming the flat layer includes forming an organic sub-layer and an inorganic sub-layer, and the inorganic sub-layer of the flat layer is formed on the organic sub-layer of the flat layer;
  • Forming the pixel defining layer includes forming an organic sublayer and an inorganic sublayer, and the organic sublayer of the pixel defining layer is formed on the inorganic sublayer of the pixel defining layer; the inorganic sublayer of the pixel defining layer Without or having a second plug, the second plug is connected to the inorganic insulating layer through a via in the flat layer; forming an anode of the organic light emitting diode element, so that the An anode is formed on the flat layer; and a cathode of the organic light emitting diode element is formed so that the cathode of the organic light emitting diode element has a fourth connection structure, and the fourth connection structure passes through the pixel defining layer. Hole and connected to the inorganic sub-layer of the pixel defining layer.
  • the organic material is an acrylic organic compound, polyamide, or polyimide.
  • the inorganic insulating layer includes:
  • Forming the encapsulation layer includes forming a stacked structure composed of a plurality of inorganic sub-layers and a plurality of organic sub-layers.
  • the present invention provides an organic light emitting diode display and a manufacturing method thereof. Surrounding each sub-pixel, each pixel, or multiple pixels of the organic light emitting diode display by using one or more inorganic materials, plugs and connection structures in an inorganic insulating layer, a flat layer, a pixel-defining layer and a packaging layer.
  • the present invention can achieve a significant technical effect of blocking water vapor / oxygen from entering the OLED light-emitting element.
  • FIG. 1A, 1B and 1C are schematic top views of an organic light emitting diode display manufactured according to the present invention.
  • FIG. 2 is a schematic cross-sectional structure diagram of an organic light emitting diode display manufactured according to the first embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional structure diagram of an organic light emitting diode display manufactured according to the second embodiment of the present invention.
  • FIG. 4 is a schematic cross-sectional structure diagram of an organic light emitting diode display manufactured according to the third embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional structure diagram of an organic light emitting diode display manufactured according to the fourth embodiment of the present invention.
  • 6A and 6B are schematic cross-sectional structures of an organic light emitting diode display manufactured according to the fifth embodiment of the present invention.
  • FIGS. 1, 1B, and 1C are schematic top views of an organic light emitting diode display manufactured according to the present invention
  • FIGS. 2, 3, 4, 5, and 6A to 6B are respectively the first to the fifth embodiments according to the present invention.
  • the organic light emitting diode display of the present invention is manufactured by first fabricating an array layer and a light emitting layer 62 on the substrate 10. Encapsulation is performed on the light emitting layer 62.
  • Each film layer in FIG. 2, FIG. 3, FIG. 4, FIG. 5, FIG. 6A to FIG. 6B is the substrate 10, the buffer layer 81, the semiconductor active layer 23, the gate insulating layer 82, the gate 21, and the layer from bottom to top.
  • a thin film transistor (TFT) element 20 in the figure uses a commonly used LTPS top-gate TFT structure as an example, but the semiconductor active layer and the thin film transistor element structure are not limited thereto.
  • the invention provides an organic light emitting diode display.
  • the organic light emitting diode display includes:
  • a thin film transistor element 20 is disposed on the substrate 10, wherein a gate 21, a source 24, and a drain 22 of the thin film transistor element 20 are covered by an inorganic insulating layer 80 (including a buffer layer 81, a gate insulating layer 82, Interlayer insulation layer 83) isolation;
  • a flat layer 40 is disposed on the thin film transistor element 20 and the inorganic insulating layer 80;
  • a pixel-defining layer 50 is disposed on the flat layer 40.
  • the pixel-defining layer 50 defines a plurality of pixels 300, and each pixel 300 has a plurality of sub-pixels (i.e., R, G, B);
  • An organic light emitting diode element (including an anode 61, a light emitting layer 62, and a cathode 63) disposed on the flat layer 40 and the pixel defining layer 50; and
  • An encapsulation layer 70 (including an inorganic sub-layer 71, an organic sub-layer 72, and an inorganic sub-layer 73) is disposed on the organic light emitting diode element.
  • the invention also proposes a method for manufacturing an organic light emitting diode display, the method includes the following steps:
  • a thin film transistor element 20 is formed on the substrate 10, wherein the gate electrode 21, the source electrode 24, and the drain electrode 22 of the thin film transistor element 20 are covered by an inorganic insulating layer 80 (including a buffer layer 81, a gate insulating layer 82, and a layer). Between insulating layers 83) isolation;
  • a pixel-defining layer 50 is formed on the flat layer 40.
  • the pixel-defining layer 50 defines a plurality of pixels 300, and each pixel 300 has a plurality of sub-pixels (that is, R, G, and B shown in FIGS. 1A, 1B, and 1C). );
  • an organic light emitting diode element including an anode 61, a light emitting layer 62, and a cathode 63 on the flat layer 40 and the pixel defining layer 50;
  • An encapsulation layer 70 (including an inorganic sublayer 71, an organic sublayer 72, and an inorganic sublayer 73) is formed on the organic light emitting diode device.
  • one of the inorganic sub-layers 71 and 73 of the inorganic insulating layer 80 (including the buffer layer 81, the gate insulating layer 82, and the interlayer insulating layer 83), the flat layer 40, the pixel defining layer 50, and the encapsulation layer 70
  • the cathode 63 of one or more inorganic materials and organic light emitting diode elements surrounds each sub-pixel (as shown in FIG. 1A), each pixel 300 (as shown in FIG. 1B) of the organic light-emitting diode display, or a plurality of pixels 300 ( (As shown in FIG. 1C) to prevent water vapor / oxygen from entering the OLED light-emitting element.
  • the inorganic material is silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride, or aluminum oxide (Al2O3), but is not limited to these materials.
  • the encapsulation layer 70 may have a stacked structure composed of a plurality of inorganic sublayers and a plurality of organic sublayers, and is not limited to a stacked structure composed of two inorganic sublayers 71 and 73 and one organic sublayer 72 shown in the figure.
  • the present invention has five implementation modes, as described in detail in Examples 1-5 below.
  • the pixel defining layer 50 is formed of an inorganic material.
  • the inorganic material may be silicon oxide (SiO2), silicon nitride (SiNx), silicon oxynitride, or aluminum oxide (Al2O3). ), But not limited to those materials.
  • the pixel defining layer 50 has a first plug 51, and the first plug 51 is connected to the interlayer insulating layer 83 through a via in the flat layer 40.
  • the inorganic insulating layer 80, the first plug 51, the pixel defining layer 50, and the inorganic sub-layers 71 and 73 of the encapsulation layer 70 in the thin film transistor (TFT) array are made of inorganic materials.
  • the inorganic material and the cathode 63 of the organic light emitting diode element surround the OLED light emitting element to prevent water vapor / oxygen from entering the OLED light emitting element.
  • the pixel defining layer is formed of an inorganic material, the pixel defining layer has a first plug, and the first plug is connected to the inorganic insulating layer through a via in the flat layer.
  • the organic light emitting diode display further includes a first connection structure 611, and the first connection structure 611 is connected to the interlayer insulation layer through a via in the flat layer 40. 83.
  • the first connection structure 611 and the anode 61 of the organic light emitting diode element are of the same material and can be formed simultaneously.
  • the first connection structure 611 is insulated from the anode 61 and is not conductive.
  • the inorganic insulating layer 80, the pixel defining layer 50, and the inorganic sublayers 71 and 73 in the thin film transistor (TFT) array are all formed of inorganic materials.
  • the first connection structure 611 and the cathode 63 of the organic light emitting diode element surround the OLED light emitting element to prevent water vapor / oxygen from entering the OLED light emitting element.
  • a first connection structure 611 is formed, the first connection structure 611 is connected to the interlayer insulating layer 83 through a via in the flat layer 40, and the first connection structure 611 and an anode of the organic light emitting diode element 61 has the same material and is formed synchronously.
  • the first connection structure 611 is insulated from the anode 61 and is not conductive.
  • the pixel defining layer 50 is formed of an organic material; the organic light emitting diode display further includes a first connection structure 611, and the first connection structure 611 passes through the flat layer 40.
  • the first connection structure 611 and the anode 61 of the organic light emitting diode element are formed in the same material and can be formed in synchronization, the first connection structure 611 and the anode 61 Insulation does not conduct;
  • the cathode 63 of the organic light emitting diode element has a second connection structure 631, and the second connection structure 631 is connected to the first connection structure 611 through a via in the pixel defining layer 50.
  • the second connection structure 631 is insulated from the anode 61 and is not conductive.
  • the inorganic insulating layer 80 and the inorganic sub-layers 71 and 73 of the encapsulation layer 70 in the thin film transistor (TFT) array are formed of inorganic materials.
  • the inorganic material, the first connection structure 611, and The second connection structure 631 and the cathode 63 of the organic light emitting diode element surround the OLED light emitting element to prevent water vapor / oxygen from entering the OLED light emitting element.
  • a first connection structure 611 is formed, the first connection structure 611 is connected to the interlayer insulating layer 83 through a via in the flat layer 40, and the first connection structure 611 and an anode of the organic light emitting diode element 61 has the same material and is formed simultaneously, and the first connection structure 611 is insulated from the anode 61 and is not conductive; and
  • the cathode 63 of the organic light emitting diode element Forming the cathode 63 of the organic light emitting diode element, so that the cathode 63 of the organic light emitting diode element has a second connection structure 631, and the second connection structure 631 is connected to the pixel via a via in the pixel defining layer 50 On the upper surface of the first connection structure 611, the second connection structure 631 is insulated from the anode 61 and is not conductive.
  • Embodiment 4 is a diagrammatic representation of Embodiment 4:
  • the pixel defining layer 50 is formed of an organic material;
  • the flat layer 40 is composed of an organic sub-layer 42 and an inorganic sub-layer 41, and the inorganic sub-layer 41 of the flat layer It is disposed on the organic sub-layer 42 of the flat layer;
  • the cathode 63 of the organic light emitting diode element has a third connection structure 632, and the third connection structure 632 is connected to all the vias in the pixel defining layer 50 through vias.
  • the inorganic sub-layer 41 of the flat layer, and the third connection structure 632 is insulated from the anode 61 but not conductive.
  • the inorganic insulating layer 80, the flat inorganic sub-layer 41, and the inorganic sub-layers 71 and 73 of the encapsulation layer 70 in the thin film transistor (TFT) array are all formed of inorganic materials.
  • the third connection structure 632 and the cathode 63 of the organic light emitting diode element surround the OLED light emitting element to prevent water vapor / oxygen from entering the OLED light emitting element.
  • Forming the flat layer 40 includes forming an organic sub-layer 42 and an inorganic sub-layer 41.
  • the inorganic sub-layer 41 of the flat layer is formed on the organic sub-layer 42 of the flat layer.
  • the cathode 63 of the organic light emitting diode element Forming the cathode 63 of the organic light emitting diode element such that the cathode 63 of the organic light emitting diode element has a third connection structure 632 that is connected to the pixel via a via in the pixel defining layer 50
  • the inorganic sub-layer 41 of the flat layer, and the third connection structure 632 is insulated from the anode 61 and is not conductive.
  • Embodiment 5 is a diagrammatic representation of Embodiment 5:
  • the pixel defining layer 50 is composed of an organic sub-layer 51 and an inorganic sub-layer 52.
  • the organic sub-layer 51 of the pixel defining layer is disposed on the pixel defining layer.
  • Layer of the inorganic sublayer 52; the inorganic sublayer 52 of the pixel defining layer 50 may not have (as shown in FIG. 6A) or have (as shown in FIG.
  • a second plug 521 a second plug 521, the second plug 521 is connected to the interlayer insulating layer 83 through a via in the flat layer 40; an anode 61 of the organic light emitting diode element is disposed on the flat layer 40; a cathode 63 of the organic light emitting diode element has a first Four connection structures 634, the fourth connection structure 634 is connected to the inorganic sub-layer 52 of the pixel definition layer through vias in the pixel definition layer 50, the fourth connection structure 634 is insulated from the anode 61, and Not conducting.
  • the inorganic insulating layer 80, the second plug 521, the inorganic sub-layer 52 of the pixel defining layer, and the inorganic sub-layers 71 and 73 of the encapsulation layer 70 in the thin film transistor (TFT) array are all It is formed of an inorganic material.
  • the inorganic material, the fourth connection structure 634 and the cathode 63 of the organic light emitting diode element surround the OLED light emitting element to prevent water vapor / oxygen from entering the OLED light emitting element.
  • Forming the pixel defining layer includes forming an organic sub-layer 51 and an inorganic sub-layer 52, and the organic sub-layer 51 of the pixel defining layer is formed on the inorganic sub-layer 52 of the pixel defining layer;
  • the inorganic sub-layer 52 of the pixel-defining layer does not have or has a second plug 521, and the second plug 521 is connected to the interlayer insulating layer 83 through a via in the flat layer 40;
  • the cathode 63 of the organic light emitting diode element Forming the cathode 63 of the organic light emitting diode element such that the cathode 63 of the organic light emitting diode element has a fourth connection structure 634 that is connected to the pixel via a via hole in the pixel defining layer 50
  • the fourth connection structure 634 is insulated from the anode 61 and is not conductive.
  • the present invention provides an organic light emitting diode display and a manufacturing method thereof. Surrounding each sub-pixel, each pixel, or multiple pixels of the organic light emitting diode display by using one or more inorganic materials, plugs and connection structures in an inorganic insulating layer, a flat layer, a pixel-defining layer and a packaging layer.
  • the present invention can achieve a significant technical effect of blocking water vapor / oxygen from entering the OLED light-emitting element.

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Abstract

本发明提出一种有机发光二极管显示器，所述有机发光二极管显示器包括：一基板；一薄膜晶体管元件，设置在所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；一平坦层，设置在所述薄膜晶体管元件与所述无机绝缘层上；一像素限定层，设置在所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；一有机发光二极管元件，设置在所述平坦层与所述像素限定层上；及一封装层，设置在所述有机发光二极管元件上；其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层的无机子层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素。

Description

有机发光二极管显示器及其制作方法 技术领域
本发明涉及显示器的技术领域，特别涉及一种有机发光二极管(organic light emitting diode，OLED)显示器及其制作方法。
 背景技术
有机发光二极管(organic light emitting diode，OLED)显示器具有宽视角、高对比度和快速响应的优点，因此OLED显示器的研究与发展广受到关注。
OLED显示器的结构主要包括OLED发光元件，OLED发光元件是由阳极、阴极以及设置在阳极和阴极之间的中间层的有机发光材料所构成。在OLED显示器的制造过程中，需要对OLED发光元件进行一封装步骤，以阻挡水汽/氧气进入OLED发光元件内而损坏显示器寿命。
根据现有技术，封装方式大致上包括盖板封装和薄膜封装两种方式。然而，现有技术的薄膜封装方式仍无法达到良好的阻挡水汽/氧气侵入OLED发光元件的技术效果。
因此，有必要提供一种有机发光二极管显示器及其制作方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种有机发光二极管显示器及其制作方法，以解决现有技术中阻挡水汽/氧气侵入OLED发光元件的效果不佳的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种有机发光二极管显示器，包括：
一基板；
一薄膜晶体管元件，设置在所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；
一平坦层，设置在所述薄膜晶体管元件与所述无机绝缘层上；
一像素限定层，设置在所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；
一有机发光二极管元件，设置在所述平坦层与所述像素限定层上；及
一封装层，设置在所述有机发光二极管元件上；
其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素。
根据本发明一优选实施例，所述无机材料是氧化硅、氮化硅、氮氧化硅、或氧化铝。
根据本发明一优选实施例，
所述像素限定层由无机材料形成，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层；
所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；
所述像素限定层由有机材料形成；所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；所述有机发光二极管元件的阴极具有第二连接结构，所述第二连接结构通过所述像素限定层中过孔而连接至所述第一连接结构的上表面；
所述像素限定层由有机材料形成；所述平坦层由一有机子层与一无机子层构成，所述平坦层的无机子层设置在所述平坦层的有机子层上；所述有机发光二极管元件的阴极具有第三连接结构，所述第三连接结构通过所述像素限定层中过孔而连接至所述平坦层的无机子层；或
所述像素限定层由一有机子层与一无机子层构成，所述像素限定层的有机子层设置在所述像素限定层的无机子层上；所述像素限定层的无机子层不具有或具有第二插塞，所述第二插塞通过所述平坦层中过孔而连接至所述无机绝缘层；所述有机发光二极管元件的阳极设置在所述平坦层上；所述有机发光二极管元件的阴极具有第四连接结构，所述第四连接结构通过所述像素限定层中过孔而连接至所述像素限定层的无机子层。
根据本发明一优选实施例，所述有机材料是丙烯酸有机化合物、聚酰胺、或聚酰亚胺。
根据本发明一优选实施例，所述无机绝缘层包括：
一缓冲层，设置在所述基板上；
一栅极绝缘层，设置在所述缓冲层上；及
一层间绝缘层，设置在所述栅极绝缘层上；及
所述封装层具有由多个无机子层与多个有机子层构成的堆叠结构。
本发明还提供一种制作有机发光二极管显示器的方法，包括以下步骤：
提供一基板；
形成一薄膜晶体管元件于所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；
形成一平坦层于所述薄膜晶体管元件与所述无机绝缘层上；
形成一像素限定层于所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；
形成一有机发光二极管元件于所述平坦层与所述像素限定层上；及
形成一封装层于所述有机发光二极管元件上；
其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素。
根据本发明一优选实施例，所述无机材料是氧化硅、氮化硅、氮氧化硅、或氧化铝。
根据本发明一优选实施例，所述方法还包括：
以无机材料形成所述像素限定层，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层；
形成第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质且同步形成；
以有机材料形成所述像素限定层；形成第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质且同步形成；及形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第二连接结构，所述第二连接结构通过所述像素限定层中过孔而连接至所述第一连接结构的上表面；
以有机材料形成所述像素限定层；形成所述平坦层包括形成一有机子层与一无机子层，所述平坦层的无机子层被形成在所述平坦层的有机子层上；形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第三连接结构，所述第三连接结构通过所述像素限定层中过孔而连接至所述平坦层的无机子层；或
形成所述像素限定层包括形成一有机子层与一无机子层，所述像素限定层的有机子层被形成在所述像素限定层的无机子层上；所述像素限定层的无机子层不具有或具有第二插塞，所述第二插塞通过所述平坦层中过孔而连接至所述无机绝缘层；形成所述有机发光二极管元件的阳极，使得所述有机发光二极管元件的阳极被形成在所述平坦层上；及形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第四连接结构，所述第四连接结构通过所述像素限定层中过孔而连接至所述像素限定层的无机子层。
根据本发明一优选实施例，所述有机材料是丙烯酸有机化合物、聚酰胺、或聚酰亚胺。
根据本发明一优选实施例，所述无机绝缘层包括：
一缓冲层，形成在所述基板上；
一栅极绝缘层，形成在所述缓冲层上；及
一层间绝缘层，形成在所述栅极绝缘层上；及
形成所述封装层包括形成由多个无机子层与多个有机子层构成的堆叠结构。
 有益效果
相较于现有技术，本发明提出一种有机发光二极管显示器及其制作方法。通过将无机绝缘层、平坦层、像素限定层与封装层中的一或多种无机材料及插塞与连接结构来包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素，本发明可以达到显着的阻挡水汽/氧气侵入OLED发光元件的技术效果。
 附图说明
图1A、1B和1C为根据本发明所制作的一种有机发光二极管显示器的俯视示意图。
图2为根据本发明的实施例一所制作的一种有机发光二极管显示器的剖面结构示意图。
图3为根据本发明的实施例二所制作的一种有机发光二极管显示器的剖面结构示意图。
图4为根据本发明的实施例三所制作的一种有机发光二极管显示器的剖面结构示意图。
图5为根据本发明的实施例四所制作的一种有机发光二极管显示器的剖面结构示意图。
图6A和6B为根据本发明的实施例五所制作的一种有机发光二极管显示器的剖面结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照说明书附图。图1A、1B和1C为根据本发明所制作的一种有机发光二极管显示器的俯视示意图；图2、图3、图4、图5、图6A至图6B分别为根据本发明的实施例一至五所制作的一种有机发光二极管显示器的剖面结构示意图。
如图2、图3、图4、图5、图6A至图6B所示，本发明的有机发光二极管显示器的制作是先在基板10上制作阵列层、发光层62，制作完发光层62后在发光层62上进行封装。图2、图3、图4、图5、图6A至图6B中的各膜层从下至上依次为基板10，缓冲层81、半导体活性层23、栅极绝缘层82、栅极21、层间绝缘层83、源极24和漏极22、平坦层40、阳极61、像素限定层50、发光层62、阴极63、封装层70(包括无机子层71、有机子层72、无机子层73)，图中薄膜晶体管(thin film transistor，TFT)元件20以常用LTPS顶栅型TFT结构作为示例，但半导体活性层以及薄膜晶体管元件结构并不限于此。
本发明提出一种有机发光二极管显示器，所述有机发光二极管显示器包括：
一基板10；
一薄膜晶体管元件20，设置在所述基板10上，其中所述薄膜晶体管元件20的栅极21与源极24和漏极22被无机绝缘层80(包括缓冲层81、栅极绝缘层82、层间绝缘层83)隔离；
一平坦层40，设置在所述薄膜晶体管元件20与所述无机绝缘层80上；
一像素限定层50，设置在所述平坦层40上，所述像素限定层50定义多个像素300，每个像素300具有多个子像素(即图1A、1B和1C所示的R、G、B)；
一有机发光二极管元件(包括阳极61、发光层62、阴极63)，设置在所述平坦层40与所述像素限定层50上；及
一封装层70(包括无机子层71、有机子层72、无机子层73)，设置在所述有机发光二极管元件上。
本发明还提出一种制作有机发光二极管显示器的方法，所述方法包括以下步骤：
提供一基板10；
形成一薄膜晶体管元件20于所述基板10上，其中所述薄膜晶体管元件20的栅极21与源极24和漏极22被无机绝缘层80(包括缓冲层81、栅极绝缘层82、层间绝缘层83)隔离；
形成一平坦层40于所述薄膜晶体管元件20与所述无机绝缘层80上；
形成一像素限定层50于所述平坦层40上，所述像素限定层50定义多个像素300，每个像素300具有多个子像素(即图1A、1B和1C所示的R、G、B)；
形成一有机发光二极管元件(包括阳极61、发光层62、阴极63)于所述平坦层40与所述像素限定层50上；及
形成一封装层70(包括无机子层71、有机子层72、无机子层73)于所述有机发光二极管元件上。
本发明是通过使无机绝缘层80(包括缓冲层81、栅极绝缘层82、层间绝缘层83)、平坦层40、像素限定层50与封装层70的无机子层71、73中的一或多种无机材料及有机发光二极管元件的阴极63包围所述有机发光二极管显示器的每个子像素(如图1A所示)、每个像素300(如图1B所示)、或多个像素300(如图1C所示)，以阻挡水汽/氧气侵入OLED发光元件。
所述无机材料是氧化硅(SiO2)、氮化硅(SiNx)、氮氧化硅或氧化铝(Al2O3)，但不限于该些材料。
封装层70可以是具有由多个无机子层与多个有机子层构成的堆叠结构，不限于图中所示的两个无机子层71、73与一个有机子层72构成的堆叠结构。
本发明具有五种实施方式，如以下实施例一至五所详细叙述。
实施例一：
请参照图2，在此实施例中，所述像素限定层50是由无机材料形成，无机材料示例的可以是氧化硅(SiO2)、氮化硅(SiNx)、氮氧化硅或氧化铝(Al2O3)，但不限于该些材料。又，所述像素限定层50具有第一插塞51，所述第一插塞51通过所述平坦层40中过孔而连接至所述层间绝缘层83。
因此，所述薄膜晶体管(TFT)阵列中的无机绝缘层80、所述第一插塞51、所述像素限定层50、与所述封装层70的无机子层71、73均是由无机材料形成，所述无机材料及所述有机发光二极管元件的阴极63包围OLED发光元件，以阻挡水汽/氧气侵入OLED发光元件。
实施例一的结构是以至少下述步骤来形成：
以无机材料形成所述像素限定层，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层。
实施例二：
请参照图3，在此实施例中，所述有机发光二极管显示器更包括第一连接结构611，所述第一连接结构611通过所述平坦层40中过孔而连接至所述层间绝缘层83，所述第一连接结构611与所述有机发光二极管元件的阳极61具有相同材质且可以同步形成，所述第一连接结构611与所述阳极61绝缘而不导通。
因此，所述薄膜晶体管(TFT)阵列中的无机绝缘层80、所述像素限定层50、与所述封装层70的无机子层71、73均是由无机材料形成，所述无机材料、所述第一连接结构611及所述有机发光二极管元件的阴极63包围OLED发光元件，以阻挡水汽/氧气侵入OLED发光元件。
实施例二的结构是以至少下述步骤来形成：
形成第一连接结构611，所述第一连接结构611通过所述平坦层40中过孔而连接至所述层间绝缘层83，所述第一连接结构611与所述有机发光二极管元件的阳极61具有相同材质且同步形成，所述第一连接结构611与所述阳极61绝缘而不导通。
实施例三：
请参照图4，在此实施例中，所述像素限定层50由有机材料形成；所述有机发光二极管显示器更包括第一连接结构611，所述第一连接结构611通过所述平坦层40中过孔而连接至所述层间绝缘层83，所述第一连接结构611与所述有机发光二极管元件的阳极61具有相同材质且可以同步形成，所述第一连接结构611与所述阳极61绝缘而不导通；所述有机发光二极管元件的阴极63具有第二连接结构631，所述第二连接结构631通过所述像素限定层50中过孔而连接至所述第一连接结构611的上表面，所述第二连接结构631与所述阳极61绝缘而不导通。
因此，所述薄膜晶体管(TFT)阵列中的无机绝缘层80与所述封装层70的无机子层71、73均是由无机材料形成，所述无机材料、所述第一连接结构611、所述第二连接结构631及所述有机发光二极管元件的阴极63包围OLED发光元件，以阻挡水汽/氧气侵入OLED发光元件。
实施例三的结构是以至少下述步骤来形成：
以有机材料形成所述像素限定层50；
形成第一连接结构611，所述第一连接结构611通过所述平坦层40中过孔而连接至所述层间绝缘层83，所述第一连接结构611与所述有机发光二极管元件的阳极61具有相同材质且同步形成，所述第一连接结构611与所述阳极61绝缘而不导通；及
形成所述有机发光二极管元件的阴极63，使得所述有机发光二极管元件的阴极63具有第二连接结构631，所述第二连接结构631通过所述像素限定层50中过孔而连接至所述第一连接结构611的上表面，所述第二连接结构631与所述阳极61绝缘而不导通。
实施例四：
请参照图5，在此实施例中，所述像素限定层50由有机材料形成；所述平坦层40由一有机子层42与一无机子层41构成，所述平坦层的无机子层41设置在所述平坦层的有机子层42上；所述有机发光二极管元件的阴极63具有第三连接结构632，所述第三连接结构632通过所述像素限定层50中过孔而连接至所述平坦层的无机子层41，所述第三连接结构632与所述阳极61绝缘而不导通。
因此，所述薄膜晶体管(TFT)阵列中的无机绝缘层80、所述平坦层的无机子层41与所述封装层70的无机子层71、73均是由无机材料形成，所述无机材料、所述第三连接结构632及所述有机发光二极管元件的阴极63包围OLED发光元件，以阻挡水汽/氧气侵入OLED发光元件。
实施例四的结构是以至少下述步骤来形成：
以有机材料形成所述像素限定层50；
形成所述平坦层40包括形成一有机子层42与一无机子层41，所述平坦层的无机子层41被形成在所述平坦层的有机子层42上；
形成所述有机发光二极管元件的阴极63，使得所述有机发光二极管元件的阴极63具有第三连接结构632，所述第三连接结构632通过所述像素限定层50中过孔而连接至所述平坦层的无机子层41，所述第三连接结构632与所述阳极61绝缘而不导通。
实施例五：
请参照图6A和图6B，在此实施例中，所述像素限定层50由一有机子层51与一无机子层52构成，所述像素限定层的有机子层51设置在所述像素限定层的无机子层52上；所述像素限定层50的无机子层52可以不具有(如图6A所示)或具有(如图6B所示)第二插塞521，所述第二插塞521通过所述平坦层40中过孔而连接至所述层间绝缘层83；所述有机发光二极管元件的阳极61设置在所述平坦层40上；所述有机发光二极管元件的阴极63具有第四连接结构634，所述第四连接结构634通过所述像素限定层50中过孔而连接至所述像素限定层的无机子层52，所述第四连接结构634与所述阳极61绝缘而不导通。
因此，所述薄膜晶体管(TFT)阵列中的无机绝缘层80、所述第二插塞521、所述像素限定层的无机子层52与所述封装层70的无机子层71、73均是由无机材料形成，所述无机材料、所述第四连接结构634及所述有机发光二极管元件的阴极63包围OLED发光元件，以阻挡水汽/氧气侵入OLED发光元件。
实施例五的结构是以至少下述步骤来形成：
形成所述像素限定层包括形成一有机子层51与一无机子层52，所述像素限定层的有机子层51被形成在所述像素限定层的无机子层52上；
所述像素限定层的无机子层52不具有或具有第二插塞521，所述第二插塞521通过所述平坦层40中过孔而连接至所述层间绝缘层83；
形成所述有机发光二极管元件的阳极61，使得所述有机发光二极管元件的阳极61被形成在所述平坦层40上；及
形成所述有机发光二极管元件的阴极63，使得所述有机发光二极管元件的阴极63具有第四连接结构634，所述第四连接结构634通过所述像素限定层50中过孔而连接至所述像素限定层的无机子层52，所述第四连接结构634与所述阳极61绝缘而不导通。
相较于现有技术，本发明提出一种有机发光二极管显示器及其制作方法。通过将无机绝缘层、平坦层、像素限定层与封装层中的一或多种无机材料及插塞与连接结构来包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素，本发明可以达到显着的阻挡水汽/氧气侵入OLED发光元件的技术效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (14)

  1. 一种有机发光二极管显示器，包括：
    一基板；
    一薄膜晶体管元件，设置在所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；
    一平坦层，设置在所述薄膜晶体管元件与所述无机绝缘层上；
    一像素限定层，设置在所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；
    一有机发光二极管元件，设置在所述平坦层与所述像素限定层上；及
    一封装层，设置在所述有机发光二极管元件上；
    其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素；
    其中所述有机材料是丙烯酸有机化合物、聚酰胺、或聚酰亚胺。
  2. 根据权利要求1所述的有机发光二极管显示器，其中，所述无机材料是氧化硅、氮化硅、氮氧化硅、或氧化铝。
  3. 根据权利要求1所述的有机发光二极管显示器，其中，
    所述像素限定层由无机材料形成，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层；
    所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；
    所述像素限定层由有机材料形成；所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；所述有机发光二极管元件的阴极具有第二连接结构，所述第二连接结构通过所述像素限定层中过孔而连接至所述第一连接结构的上表面；
    所述像素限定层由有机材料形成；所述平坦层由一有机子层与一无机子层构成，所述平坦层的无机子层设置在所述平坦层的有机子层上；所述有机发光二极管元件的阴极具有第三连接结构，所述第三连接结构通过所述像素限定层中过孔而连接至所述平坦层的无机子层；或
    所述像素限定层由一有机子层与一无机子层构成，所述像素限定层的有机子层设置在所述像素限定层的无机子层上；所述像素限定层的无机子层不具有或具有第二插塞，所述第二插塞通过所述平坦层中过孔而连接至所述无机绝缘层；所述有机发光二极管元件的阳极设置在所述平坦层上；所述有机发光二极管元件的阴极具有第四连接结构，所述第四连接结构通过所述像素限定层中过孔而连接至所述像素限定层的无机子层。
  4. 根据权利要求1所述的有机发光二极管显示器，其中，
    所述无机绝缘层包括：
    一缓冲层，设置在所述基板上；
    一栅极绝缘层，设置在所述缓冲层上；及
    一层间绝缘层，设置在所述栅极绝缘层上；及
    所述封装层具有由多个无机子层与多个有机子层构成的堆叠结构。
  5. 一种有机发光二极管显示器，包括：
    一基板；
    一薄膜晶体管元件，设置在所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；
    一平坦层，设置在所述薄膜晶体管元件与所述无机绝缘层上；
    一像素限定层，设置在所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；
    一有机发光二极管元件，设置在所述平坦层与所述像素限定层上；及
    一封装层，设置在所述有机发光二极管元件上；
    其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素。
  6. 根据权利要求5所述的有机发光二极管显示器，其中，所述无机材料是氧化硅、氮化硅、氮氧化硅、或氧化铝。
  7. 根据权利要求5所述的有机发光二极管显示器，其中，
    所述像素限定层由无机材料形成，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层；
    所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；
    所述像素限定层由有机材料形成；所述有机发光二极管显示器更包括第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质；所述有机发光二极管元件的阴极具有第二连接结构，所述第二连接结构通过所述像素限定层中过孔而连接至所述第一连接结构的上表面；
    所述像素限定层由有机材料形成；所述平坦层由一有机子层与一无机子层构成，所述平坦层的无机子层设置在所述平坦层的有机子层上；所述有机发光二极管元件的阴极具有第三连接结构，所述第三连接结构通过所述像素限定层中过孔而连接至所述平坦层的无机子层；或
    所述像素限定层由一有机子层与一无机子层构成，所述像素限定层的有机子层设置在所述像素限定层的无机子层上；所述像素限定层的无机子层不具有或具有第二插塞，所述第二插塞通过所述平坦层中过孔而连接至所述无机绝缘层；所述有机发光二极管元件的阳极设置在所述平坦层上；所述有机发光二极管元件的阴极具有第四连接结构，所述第四连接结构通过所述像素限定层中过孔而连接至所述像素限定层的无机子层。
  8. 根据权利要求7所述的有机发光二极管显示器，其中，所述有机材料是丙烯酸有机化合物、聚酰胺、或聚酰亚胺。
  9. 根据权利要求5所述的有机发光二极管显示器，其中，
    所述无机绝缘层包括：
    一缓冲层，设置在所述基板上；
    一栅极绝缘层，设置在所述缓冲层上；及
    一层间绝缘层，设置在所述栅极绝缘层上；及
    所述封装层具有由多个无机子层与多个有机子层构成的堆叠结构。
  10. 一种制作有机发光二极管显示器的方法，包括以下步骤：
    提供一基板；
    形成一薄膜晶体管元件于所述基板上，其中所述薄膜晶体管元件的栅极与源极和漏极被无机绝缘层隔离；
    形成一平坦层于所述薄膜晶体管元件与所述无机绝缘层上；
    形成一像素限定层于所述平坦层上，所述像素限定层定义多个像素，每个像素具有多个子像素；
    形成一有机发光二极管元件于所述平坦层与所述像素限定层上；及
    形成一封装层于所述有机发光二极管元件上；
    其中所述无机绝缘层、所述平坦层、所述像素限定层与所述封装层中的一或多种无机材料及所述有机发光二极管元件的阴极包围所述有机发光二极管显示器的每个子像素、每个像素、或多个像素。
  11. 根据权利要求10所述的制作有机发光二极管显示器的方法，其中，所述无机材料是氧化硅、氮化硅、氮氧化硅、或氧化铝。
  12. 根据权利要求10所述的制作有机发光二极管显示器的方法，其中，所述方法还包括：
    以无机材料形成所述像素限定层，所述像素限定层具有第一插塞，所述第一插塞通过所述平坦层中过孔而连接至所述无机绝缘层；
    形成第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质且同步形成；
    以有机材料形成所述像素限定层；形成第一连接结构，所述第一连接结构通过所述平坦层中过孔而连接至所述无机绝缘层，所述第一连接结构与所述有机发光二极管元件的阳极具有相同材质且同步形成；及形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第二连接结构，所述第二连接结构通过所述像素限定层中过孔而连接至所述第一连接结构的上表面；
    以有机材料形成所述像素限定层；形成所述平坦层包括形成一有机子层与一无机子层，所述平坦层的无机子层被形成在所述平坦层的有机子层上；形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第三连接结构，所述第三连接结构通过所述像素限定层中过孔而连接至所述平坦层的无机子层；或
    形成所述像素限定层包括形成一有机子层与一无机子层，所述像素限定层的有机子层被形成在所述像素限定层的无机子层上；所述像素限定层的无机子层不具有或具有第二插塞，所述第二插塞通过所述平坦层中过孔而连接至所述无机绝缘层；形成所述有机发光二极管元件的阳极，使得所述有机发光二极管元件的阳极被形成在所述平坦层上；及形成所述有机发光二极管元件的阴极，使得所述有机发光二极管元件的阴极具有第四连接结构，所述第四连接结构通过所述像素限定层中过孔而连接至所述像素限定层的无机子层。
  13. 根据权利要求12所述的制作有机发光二极管显示器的方法，其中，所述有机材料是丙烯酸有机化合物、聚酰胺、或聚酰亚胺。
  14. 根据权利要求10所述的制作有机发光二极管显示器的方法，其中，
    所述无机绝缘层包括：
    一缓冲层，形成在所述基板上；
    一栅极绝缘层，形成在所述缓冲层上；及
    一层间绝缘层，形成在所述栅极绝缘层上；及
    形成所述封装层包括形成由多个无机子层与多个有机子层构成的堆叠结构。
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