WO2020077714A1 - 显示面板及其制作方法、显示模组 - Google Patents

显示面板及其制作方法、显示模组 Download PDF

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Publication number
WO2020077714A1
WO2020077714A1 PCT/CN2018/115536 CN2018115536W WO2020077714A1 WO 2020077714 A1 WO2020077714 A1 WO 2020077714A1 CN 2018115536 W CN2018115536 W CN 2018115536W WO 2020077714 A1 WO2020077714 A1 WO 2020077714A1
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WIPO (PCT)
Prior art keywords
layer
inorganic
inorganic layer
display panel
encapsulation
Prior art date
Application number
PCT/CN2018/115536
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English (en)
French (fr)
Inventor
郭天福
徐湘伦
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/498,007 priority Critical patent/US20210384463A1/en
Publication of WO2020077714A1 publication Critical patent/WO2020077714A1/zh

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8428Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Definitions

  • the present application relates to the display field, in particular to a display panel, a manufacturing method thereof, and a display module.
  • OLED Organic Light-Emitting Diode
  • the presence of the thin-film encapsulation layer effectively prevents the invasion of water and oxygen; the thin-film encapsulation layer generally includes a uniformly dense inorganic film layer as a barrier layer to achieve the purpose of preventing the invasion of water and oxygen.
  • the internal stress of the inorganic film layer is large, it is brittle, and the weak point of bending resistance seriously limits its play in the field of TFE technology.
  • the present application provides a display panel, a manufacturing method thereof, and a display module, to solve the technical problem that the inorganic film layer in the film encapsulation layer of the existing display panel has a large stress.
  • This application provides a display panel, which includes:
  • a pixel definition layer on the array substrate including a first opening
  • a light emitting device layer on the array substrate including a display unit disposed in the first opening;
  • a packaging layer located on the light emitting device layer including a plurality of packaging units distributed in an array, and a partition wall is arranged between two adjacent packaging units;
  • At least one inorganic layer and at least one organic layer are included between two adjacent barrier walls, and at least one display unit is corresponding between two adjacent barrier walls.
  • the orthographic projection of the barrier wall on the pixel definition layer is located on the pixel definition layer between two adjacent first openings.
  • the encapsulation layer includes a first inorganic layer on the light emitting device layer, a first organic layer on the first inorganic layer, and a Second inorganic layer;
  • the first inorganic layer and the first organic layer are included between two adjacent barrier walls.
  • the second inorganic layer includes at least two second inorganic layer units distributed in an array, and horizontally and vertically staggered grooves separating the second inorganic layer units;
  • the orthographic projection of the groove on the partition wall is located in the partition wall.
  • the encapsulation layer further includes a third inorganic layer between the barrier wall and the second inorganic layer, and the third inorganic layer is the same as the first inorganic layer Formed during the process;
  • the thickness of the barrier wall and the third inorganic layer is not greater than the thickness of the first inorganic layer and the first organic layer.
  • the partition wall is one of an inverted trapezoid and an inverted triangle.
  • the display panel further includes a first protective layer between the barrier wall and the light emitting device layer.
  • the encapsulation layer further includes a second protective layer formed on the surface of the partition wall;
  • the second protective layer includes one of an inorganic film layer or a metal thin film.
  • This application also proposes a method for manufacturing a display panel, which includes:
  • the pixel definition layer includes a first opening
  • the light emitting device layer includes a display unit disposed in the first opening;
  • the encapsulation layer includes a plurality of encapsulation units distributed in an array, a partition wall is disposed between two adjacent encapsulation units, and at least one inorganic layer and at least one organic layer are included between two adjacent partition walls. At least one display unit corresponds between two adjacent partition walls.
  • the step of forming an encapsulation layer on the light-emitting device layer includes:
  • An orthographic projection of the barrier wall on the pixel definition layer is located on the pixel definition layer between two adjacent first openings;
  • the first inorganic layer is located on the light-emitting device layer between two adjacent barrier walls, and the third inorganic layer is located on the barrier wall;
  • the thickness of the partition wall and the third inorganic layer is not greater than the thickness of the first inorganic layer and the first organic layer;
  • the second inorganic layer includes at least two second inorganic layer units distributed in an array, and horizontally and vertically staggered grooves separating the second inorganic layer units, the grooves are located on the partition wall
  • the projection is located in the partition wall.
  • the display panel further includes a first protective layer between the barrier wall and the light emitting device layer.
  • the encapsulation layer further includes a second protective layer formed on the surface of the partition wall;
  • the second protective layer includes one of an inorganic film layer or a metal thin film.
  • the present application also proposes a display module, including a display panel, and a touch layer, a polarizing layer and a cover layer on the display panel, wherein the display panel includes:
  • a pixel definition layer on the array substrate including a first opening
  • a light emitting device layer on the array substrate including a display unit disposed in the first opening;
  • An encapsulation layer on the light-emitting device layer including at least two encapsulation units, and a partition wall is provided between two adjacent encapsulation units;
  • At least one inorganic layer and at least one organic layer are included between two adjacent barrier walls, and at least one display unit is corresponding between two adjacent barrier walls.
  • the orthographic projection of the barrier wall on the pixel definition layer is located on the pixel definition layer between two adjacent first openings.
  • the encapsulation layer includes a first inorganic layer on the light emitting device layer, a first organic layer on the first inorganic layer, and a first organic layer The second inorganic layer;
  • the first inorganic layer and the first organic layer are included between two adjacent barrier walls.
  • the second inorganic layer includes at least two second inorganic layer units distributed in an array, and horizontally and vertically staggered grooves separating the second inorganic layer units;
  • the orthographic projection of the groove on the partition wall is located in the partition wall.
  • the encapsulation layer further includes a third inorganic layer between the barrier wall and the second inorganic layer, the third inorganic layer and the first inorganic layer are between Formed in the same process;
  • the thickness of the barrier wall and the third inorganic layer is not greater than the thickness of the first inorganic layer and the first organic layer.
  • the partition wall is one of an inverted trapezoid and an inverted triangle.
  • the display panel further includes a first protective layer between the barrier wall and the light emitting device layer.
  • the encapsulation layer further includes a second protective layer formed on the surface of the partition wall;
  • the second protective layer includes one of an inorganic film layer or a metal thin film.
  • FIG. 1 is a film structure diagram of a display panel according to Example 1 of the present application.
  • FIG. 2 is a top view of a display panel packaging layer according to Example 1 of the present application.
  • Example 3 is a structural diagram of a film layer of a display panel according to Example 2 of the present application.
  • FIG. 4 is a film structure diagram of a display panel partition wall area according to Embodiment 3 of the present application.
  • Example 5 is a structural diagram of a film layer of a display panel according to Example 4 of the present application.
  • FIG. 6 is a diagram of the first step of the method for manufacturing a display panel of the present application.
  • FIG. 8 is a second step diagram of the display panel manufacturing method of the present application.
  • FIG. 1 is a structural diagram of a film layer of a display panel according to Embodiment 1 of the present application.
  • the display panel includes an array substrate 10, a pixel definition layer 20, a light emitting device layer 30, and an encapsulation layer 40.
  • the array substrate 10 includes a substrate 101 and a thin film transistor layer 102 on the substrate 101.
  • the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the thin film transistor layer 102 includes an etch barrier layer type, a back channel etch type, or a top gate thin film transistor type structure, which is not particularly limited.
  • the thin film transistor layer of the top gate thin film transistor type may include: a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source and drain, and a flat layer.
  • the pixel definition layer 20 is formed on the array substrate 10 for separating the adjacent display units 304 in the display panel to prevent color crosstalk.
  • the pixel definition layer 20 includes a plurality of first openings 201, and the first openings 201 correspond to the display unit 304 in one-to-one correspondence.
  • the light emitting device layer 30 is formed on the array substrate 10.
  • the light emitting device layer 30 includes an anode layer 301 on the array substrate 10, a light emitting layer 302 on the anode layer 301, and a cathode layer 303 on the light emitting layer 302.
  • the anode layer 301 includes a plurality of anodes 3011 distributed in an array, the anodes 3011 correspond to the first openings 201 in one-to-one correspondence;
  • the light-emitting layer 302 includes a plurality of light-emitting units 3021, and the light-emitting units 3021 and the The anodes 3011 correspond to each other.
  • the light emitting device layer 30 includes a plurality of display units 304 composed of the anode 3011, the light emitting unit 3021 and the cathode layer 303.
  • the display unit 304 is one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the colors of sub-pixels of two adjacent display units 304 are different.
  • the encapsulation layer 40 is formed on the cathode layer 303.
  • the encapsulation layer 40 is used to block water and oxygen in the atmosphere from entering the display panel and protect the non-film structure inside the display panel.
  • FIG. 2 is a top view of a display panel packaging layer according to an embodiment of the present application.
  • the packaging layer 40 includes a plurality of packaging units 401 distributed in an array.
  • Each of the encapsulation units 401 includes a structure in which at least one organic layer and at least one inorganic layer are alternately stacked to ensure the water and oxygen barrier properties of the encapsulation layer 40 and improve the flexibility of the encapsulation layer 40.
  • the organic layer is located in the middle of the encapsulation layer 40, the inorganic layer is located on both sides of the encapsulation layer 40, and the organic layer is wrapped in the middle.
  • Each of the packaging units 401 corresponds to at least one of the display units 304.
  • the packaging unit 401 includes a first inorganic layer 402, a first organic layer 403, and a second inorganic layer 404.
  • the first organic layer 403 is located between the first inorganic layer 402 and the second Between the inorganic layers 404.
  • a partition wall 405 is further provided between the two adjacent packaging units 401, and at least one organic layer and at least one inorganic layer are provided between the two adjacent partition walls.
  • At least one display unit 304 corresponds to two adjacent partition walls 405.
  • FIG. 1 there is a display unit 304 between two adjacent partition walls 405.
  • FIG. 3 there are three display units 304 between two adjacent partition walls 405.
  • the barrier wall is formed on the cathode layer 303, and in the display panel of the present application, the orthographic projection of the barrier wall 405 on the pixel defining layer 20 is located at two adjacent first openings The pixel between 201 defines the layer 20.
  • the barrier wall 405 is formed in the non-light emitting area of the display panel, and the barrier wall does not affect the aperture ratio of the display panel.
  • the encapsulation layer 40 further includes a third inorganic layer 406 formed on the barrier wall 405.
  • the third inorganic layer 406 is located between the barrier wall 405 and the second inorganic layer 404.
  • the third inorganic layer 406 and the first inorganic layer 402 are formed in the same process.
  • an inorganic film layer is deposited on the barrier wall 405 and the cathode layer 303 in the light emitting device layer 30 while forming adjacent barrier walls The first inorganic layer 402 between 405 and the third inorganic layer 406 on the barrier wall 405.
  • the material of the first inorganic layer 402 and the third inorganic layer 406 may be at least one of water-resistant oxygen-resistant inorganic films such as silicon nitride, silicon oxynitride, aluminum oxide, and titanium dioxide.
  • water-resistant oxygen-resistant inorganic films such as silicon nitride, silicon oxynitride, aluminum oxide, and titanium dioxide.
  • the thickness of the partition wall 405 is not greater than the thickness of the first organic layer 403.
  • the thickness of the barrier wall 405 is the same as the thickness of the first organic layer 403.
  • the material of the second inorganic layer 404 is the same as the material of the first inorganic layer 402 or the third inorganic layer 406.
  • the second inorganic layer 404 includes at least two second inorganic layer units 4041 distributed in an array, and horizontally and vertically staggered grooves 4042 separating the second inorganic layer units 4041, the grooves
  • the orthographic projection of 4042 on the partition wall 405 is located in the partition wall 405.
  • the partition wall is one of inverted trapezoid and inverted triangle.
  • the partition wall is inverted trapezoid.
  • the thickness of the partition wall is 1-20 microns.
  • the partition wall includes an inorganic material.
  • FIG. 4 is a film structure diagram of a display panel partition wall region according to Embodiment 3 of the present application.
  • the display panel further includes a second protective layer 408 formed on the surface of the barrier wall 405.
  • the material of the second protective layer 408 and the material of the inorganic layer in the encapsulation layer 40 may be the same.
  • FIG. 5 is a film structure diagram of a display panel according to Embodiment 4 of the present application.
  • the display panel further includes a first protective layer 407 between the barrier wall 405 and the light emitting device layer 30.
  • the material of the first protective layer 407 includes one of an inorganic film layer or a metal thin film.
  • a stacking structure between more than two inorganic layers and organic layers may be provided between two adjacent barrier walls, which will not be repeated in this application.
  • FIG. 6 is a step diagram of a method for manufacturing a display panel of the present application.
  • FIGS. 7A ⁇ 7J are process flow charts of the display panel manufacturing method of the present application.
  • the manufacturing method of the display panel includes:
  • a substrate 101 is provided, and a thin film transistor layer 102 is formed on the substrate 101;
  • the substrate 101 may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the thin film transistor layer 102 includes an etch barrier layer type, a back channel etch type, or a top gate thin film transistor type structure, which is not specifically limited.
  • the thin-film transistor layer of the top-gate thin-film transistor type may include a buffer layer, an active layer, a gate insulating layer, a gate layer, an inter-insulating layer, a source and drain, and a flat layer.
  • the pixel definition layer 20 is formed on the array substrate 10, and a plurality of first openings 201 are formed on the pixel definition layer 20 using a photolithography process.
  • the display units 304 correspond to each other.
  • the step of forming the pixel definition layer 20 further includes forming an anode layer 301 on the array substrate 10.
  • the anode layer 301 includes a plurality of anodes 3011, and the anodes 3011 correspond to the first openings 201 in one-to-one correspondence.
  • a light-emitting layer 302 is formed in the first opening 201, and the light-emitting layer 302 includes a plurality of light-emitting units 3021, and the light-emitting units 3021 correspond to the anode 3011 one by one;
  • a cathode layer 303 is formed on the layer 302 and the pixel definition layer 20.
  • the formed light emitting device layer 30 includes a plurality of display units 304 disposed in the first opening 201.
  • the display unit 304 includes an anode 3011 formed on the array substrate 10, a light emitting unit 3021 formed on the anode layer 301, and a cathode layer 303 formed on the light emitting unit 3021.
  • the display unit 304 is one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel, and the colors of sub-pixels of two adjacent display units 304 are different.
  • the display panel in order to prevent the photolithography process in the packaging layer process from damaging the organic layer in the light emitting device layer 30, the display panel further includes a first protective layer 407 formed on the surface of the barrier wall 405.
  • the material of the first protective layer 407 and the material of the inorganic layer in the encapsulation layer may be the same.
  • the encapsulation layer includes a plurality of encapsulation units 401 distributed in an array, a partition wall is provided between two adjacent encapsulation units 401, and at least one inorganic layer and at least one There is an organic layer, and there is at least one display unit 304 between two adjacent barrier walls 405.
  • FIG. 8 is a second step diagram of the manufacturing method of the display panel of the present application.
  • Step S40 specifically includes:
  • a partition wall 405 is further provided between the two adjacent packaging units 401, and at least one organic layer and at least one inorganic layer are provided between the two adjacent partition walls.
  • At least one display unit 304 corresponds to two adjacent partition walls 405.
  • FIG. 7E there is a display unit 304 between two adjacent partition walls 405;
  • FIG. 7F there are three display units 304 between two adjacent partition walls 405.
  • the partition wall is formed on the cathode layer 303.
  • the orthographic projection of the barrier wall 405 on the pixel definition layer 20 is located on the pixel definition layer 20 between two adjacent first openings 201.
  • the barrier wall is formed in a non-light emitting area of the display panel, and the barrier wall does not affect the aperture ratio of the display panel.
  • the partition wall is one of inverted trapezoid and inverted triangle.
  • the partition wall has an inverted trapezoid shape.
  • the thickness of the partition wall is 1-20 microns.
  • the partition wall includes an inorganic material.
  • the display panel further includes a second protective layer 408 between the barrier wall 405 and the light emitting device layer 30.
  • the material of the second protective layer 408 includes one of an inorganic film layer or a metal thin film.
  • S402. Deposit an inorganic film layer on the barrier wall and the light-emitting device layer 30 to form a first inorganic layer 402 and a second inorganic layer 404;
  • the second inorganic layer 404 and the first inorganic layer 402 are formed in the same process.
  • the material of the first inorganic layer 402 and the third inorganic layer 406 may be at least one of water-resistant oxygen-resistant inorganic films such as silicon nitride, silicon oxynitride, aluminum oxide, and titanium dioxide.
  • water-resistant oxygen-resistant inorganic films such as silicon nitride, silicon oxynitride, aluminum oxide, and titanium dioxide.
  • the height of the first organic layer 403 formed does not exceed the third inorganic layer 406.
  • the thickness of the barrier wall 405 and the third inorganic layer 406 is not greater than the thickness of the first inorganic layer 402 and the first organic layer 403.
  • the thickness of the barrier wall 405 is the same as the thickness of the first organic layer 403.
  • the second inorganic layer 404 covers the third inorganic layer 406 and the first organic layer 403, and the second inorganic layer 404 is divided into a plurality of second arrays distributed in an array by a photolithography process Inorganic layer unit 4041.
  • the adjacent two second inorganic layer units 4041 include horizontally and vertically staggered grooves 4042.
  • the orthographic projection of the grooves 4042 on the partition wall 405 is located in the partition wall 405.
  • the material of the second inorganic layer 404 is the same as the material of the first inorganic layer 402 or the third inorganic layer 406.
  • a display module includes the display panel, and further includes a touch layer, a polarizing layer, and a cover layer disposed on the display panel in sequence.
  • the encapsulation layer is bonded to the touch layer through the first optical adhesive layer
  • the polarizing layer is bonded to the cover plate layer through the second optical adhesive layer.
  • an electronic device includes the display module; the electronic device includes but is not limited to a mobile phone, a tablet computer, a computer monitor, a game console, a television, Display screens, wearable devices, and other household appliances or household appliances with display functions.
  • the working principle of the display module, the working principle of the electronic device is similar to the working principle of the display panel, the working principle of the display module and the working principle of the electronic device can be specifically referred to the display panel The working principle is not repeated here.
  • the present application proposes a display panel, a manufacturing method thereof, and a display module.
  • the display panel includes an array substrate; a pixel definition layer on the array substrate includes a first opening; and a light emitting device on the array substrate Layer, including a display unit disposed in the first opening; an encapsulation layer on the light-emitting device layer, including a partition wall, wherein between two adjacent partition walls includes at least one inorganic layer and at least There is an organic layer, and at least one display unit corresponds between two adjacent partition walls.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本申请提出了一种显示面板及其制作方法、显示模组,所述显示面板包括封装层,所述封装层包括多个呈阵列分布的封装单元,相邻两所述封装单元之间设置有隔挡墙;其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。

Description

显示面板及其制作方法、显示模组 技术领域
本申请涉及显示领域,特别涉及一种显示面板及其制作方法、显示模组。
背景技术
在平板显示技术中,有机发光二极管(Organic Light-Emitting Diode,OLED)显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点,逐渐成为继液晶显示器后的第三代显示技术。
在现有OLED器件中,薄膜封装层的存在有效防止水氧入侵;薄膜封装层一般包括一致密的无机膜层做阻挡层,以达到阻止水氧入侵的目的。但是,无机膜层内应力大,易脆,不耐弯折的弱点严重限制了其在TFE技术领域中的发挥。
因此,目前亟需一种显示面板以解决上述问题。
技术问题
本申请提供一种显示面板及其制作方法、显示模组,以解决现有显示面板薄膜封装层中无机膜层应力较大的技术问题。
技术解决方案
本申请提供一种显示面板,其中,包括:
阵列基板;
位于所述阵列基板上的像素定义层,包括第一开口;
位于所述阵列基板上的发光器件层,包括设置于所述第一开口内的显示单元;
位于所述发光器件层上的封装层,包括多个呈阵列分布的封装单元,相邻两所述封装单元之间设置有隔挡墙;
其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
在本申请的显示面板中,所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上。
在本申请的显示面板中,所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的第一有机层、及位于所述第一有机层上的第二无机层;
相邻两所述隔挡墙之间包括所述第一无机层及所述第一有机层。
在本申请的显示面板中,所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽;
所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
在本申请的显示面板中,所述封装层还包括位于所述隔挡墙与所述第二无机层之间的第三无机层,所述第三无机层与所述第一无机层在同一道工艺中形成;
其中,所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度。
在本申请的显示面板中,所述隔挡墙为倒梯形、倒三角形中一种。
在本申请的显示面板中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
在本申请的显示面板中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
所述第二保护层包括无机膜层或金属薄膜中的一种。
本申请还提出了一种显示面板的制作方法,其包括:
提供一阵列基板;
在所述阵列基板上形成像素定义层,
所述像素定义层包括包括第一开口;
在所述阵列基板上形成发光器件层,
所述发光器件层包括设置于所述第一开口内的显示单元;
在所述发光器件层上形成封装层,
所述封装层包括多个呈阵列分布的封装单元,相邻两所述封装单元之间设置有隔挡墙,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
在本申请的制作方法中,在所述发光器件层上形成封装层的步骤包括:
在所述发光器件层上形成至少两所述隔挡墙,
所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上;
在所述隔挡墙及所述发光器件层上沉积一无机膜层,以形成第一无机层和第三无机层,
所述第一无机层位于相邻两所述隔挡墙之间的所述发光器件层上,所述第三无机层位于所述隔挡墙上;
在相邻两所述隔挡墙之间形成第一有机层,
所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度;
在所述第一有机层及所述第三无机层上形成第二无机层;
所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽,所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
在本申请的制作方法中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
在本申请的制作方法中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
所述第二保护层包括无机膜层或金属薄膜中的一种。
本申请还提出了一种显示模组,包括显示面板、及位于所述显示面板上的触控层、偏光层和盖板层,其中,所述显示面板包括:
阵列基板;
位于所述阵列基板上的像素定义层,包括第一开口;
位于所述阵列基板上的发光器件层,包括设置于所述第一开口内的显示单元;
位于所述发光器件层上的封装层,包括至少两封装单元,相邻两所述封装单元之间设置有隔挡墙;
其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
在本申请的显示模组中,所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上。
在本申请的显示模组中,所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的第一有机层、及位于所述第一有机层上的第二无机层;
相邻两所述隔挡墙之间包括所述第一无机层及所述第一有机层。
在本申请的显示模组中,所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽;
所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
在本申请的显示模组中,所述封装层还包括位于所述隔挡墙与所述第二无机层之间的第三无机层,所述第三无机层与所述第一无机层在同一道工艺中形成;
其中,所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度。
在本申请的显示模组中,所述隔挡墙为倒梯形、倒三角形中一种。
在本申请的显示模组中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
在本申请的显示模组中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
所述第二保护层包括无机膜层或金属薄膜中的一种。
有益效果
本申请通过在所述封装上设置一隔挡墙,相邻两所述隔挡墙之间设置有交替叠加的无机层和有机层,使得所述封装层分区域进行封装,减小了所述封装层的内应力,增加了封装层的柔性。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例一显示面板的膜层结构图;
图2为本申请实施例一显示面板封装层的俯视图;
图3为本申请实施例二显示面板的膜层结构图;
图4为本申请实施例三显示面板隔挡墙区域的膜层结构图;
图5为本申请实施例四显示面板的膜层结构图;
图6为本申请显示面板制作方法的第一种步骤图;
图7A~7J为本申请显示面板制作方法的工艺流程图;
图8为本申请显示面板制作方法的第二种步骤图。
本发明的实施方式
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
请参阅图1,图1为本申请实施例一显示面板的膜层结构图。
所述显示面板包括阵列基板10、像素定义层20、发光器件层30及封装层40。
所述阵列基板10包括基板101及位于所述基板101上的薄膜晶体管层102。
在一种实施例中,所述基板101可以为玻璃基板、石英基板、树脂基板等中的一种。
在一种实施例中,所述薄膜晶体管层102包括蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型结构,具体没有限制。例如,顶栅薄膜晶体管型的薄膜晶体管层可以包括:缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极及平坦层。
所述像素定义层20形成于所述阵列基板10上,用于将所述显示面板中相邻的所述显示单元304分离,防止颜色的串扰。所述像素定义层20包括多个第一开口201,所述第一开口201与所述显示单元304一一对应。
所述发光器件层30形成于所述阵列基板10上。所述发光器件层30包括位于所述阵列基板10上的阳极层301,位于所述阳极层301上的发光层302及位于所述发光层302上的阴极层303。
所述阳极层301包括多个呈阵列分布的阳极3011,所述阳极3011与所述第一开口201一一对应;所述发光层302包括多个发光单元3021,所述发光单元3021与所述阳极3011一一对应。
所述发光器件层30包括多个由所述阳极3011、发光单元3021及阴极层303组成的显示单元304。所述显示单元304为红色子像素、绿色子像素、蓝色子像素中的一种,相邻两所述显示单元304的子像素颜色不相同。
所述封装层40形成于所述阴极层303上,所述封装层40用于阻隔大气中的水氧进入显示面板内,保护显示面板内部非膜层结构。
请参阅图2,图2为本申请实施例一显示面板封装层的俯视图。
所述封装层40包括多个呈阵列分布的封装单元401。每一所述封装单元401包括至少一有机层与至少一无机层交错层叠的结构,以保证封装层40的阻水氧性能,又提高了封装层40的柔性。
在一种实施例中,有机层位于所述封装层40的中间,无机层位于所述封装层40的两侧,将有机层包裹在中间。
每一所述封装单元401对应至少一所述显示单元304。
请参阅图1,所述封装单元401包括第一无机层402、第一有机层403及第二无机层404,所述有第一有机层403位于所述第一无机层402和所述第二无机层404之间。
相邻两所述封装单元401之间还设置有隔挡墙405,相邻两所述隔挡墙之间设置有至少一有机层与至少一无机层。
相邻两所述隔挡墙405之间对应至少一所述显示单元304。
请参阅图1,相邻两所述隔挡墙405之间对应一所述显示单元304。
请参阅图3,相邻两所述隔挡墙405之间对应三个所述显示单元304。
所述隔挡墙形成于所述阴极层303上,且在本申请的显示面板中,所述隔挡墙405在所述像素定义层20上的正投影,位于相邻两所述第一开口201之间的所述像素定义层20上。
所述隔挡墙405形成于所述显示面板的非发光区,所述隔挡墙不影响所述显示面板的开口率。
所述封装层40还包括形成于隔挡墙405上的第三无机层406。
在一种实施例中,所述第三无机层406位于是隔挡墙405与所述第二无机层404之间。
在一种实施例中,所述第三无机层406与所述第一无机层402在同一道工艺中形成。在完成发光器件层30上的隔挡墙405后,在所述隔挡墙405及所述发光器件层30中的阴极层303上沉积一无机膜层,同时形成位于相邻所述隔挡墙405之间的所述第一无机层402及位于所述隔挡墙405上的第三无机层406。
在一种实施例中,所述第一无机层402及所述第三无机层406的材料可以为氮化硅、氮氧化硅、三氧化二铝、二氧化钛等阻水氧的无机膜中的至少一种。
所述隔挡墙405的厚度不大于所述第一有机层403的厚度。
在一种实施例中,所述隔挡墙405的厚度与所述第一有机层403的厚度相同。所述第二无机层404的材料与所述第一无机层402或所述第三无机层406的材料相同。
请参阅图2,所述第二无机层404包括至少两个呈阵列分布的第二无机层单元4041、及分离所述第二无机层单元4041的横纵交错的凹槽4042,所述凹槽4042在所述隔挡墙405上的正投影位于所述隔挡墙405内。
所述隔挡墙为倒梯形、倒三角形中一种。
请参阅图1或图3,在一种实施例中,所述隔挡墙为倒梯形。
在一种实施例中,所述隔挡墙的厚度为1~20微米。
在一种实施例中,所述隔挡墙包括无机材料。
请参阅图4,图4为本申请实施例三显示面板隔挡墙区域的膜层结构图。
为了避免封装层40工艺中的光刻工艺破坏发光器件层30中有机层,所述显示面板还包括形成于所述隔挡墙405表面的第二保护层408。
在一种实施例中,所述第二保护层408的材料与所述封装层40中的无机层的材料可以相同。
请参阅图5,图5为本申请实施例四显示面板的膜层结构图。
为了进一步增加封装层40的阻水氧性能,所述显示面板还包括位于所述隔挡墙405与所述发光器件层30之间的第一保护层407。
在一种实施例中,所述第一保护层407的材料包括无机膜层或金属薄膜中的一种。
为了进一步保证封装层40的阻水氧性能,相邻两所述隔挡墙之间还可以设置超过2层的无机层与有机层之间的层叠结构,本申请不再一一赘述。
本申请通过在所述封装上设置一隔挡墙405,相邻两所述隔挡墙之间设置有交替叠加的无机层和有机层,使得所述封装层分区域进行封装,减小了所述封装层的内应力,增加了封装层的柔性。
请参阅图6,图6为本申请一种显示面板的制作方法的步骤图。
请参阅图7A~7J,图7A~7J为本申请显示面板制作方法的工艺流程图。
所述显示面板的制作方法包括:
S10、提供一阵列基板10;
请参阅图7A,在本步骤中,提供一基板101,并在所述基板101上形成薄膜晶体管层102;
在一种实施例中,所述基板101可以为玻璃基板、石英基板、树脂基板等中的一种。
所述薄膜晶体管层102包括蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型结构,具体没有限制。例如顶栅薄膜晶体管型的所述薄膜晶体管层可以包括:缓冲层、有源层、栅绝缘层、栅极层、间绝缘层、源漏极及平坦层。
S20、在所述阵列基板10上形成像素定义层20;
请参阅图7B,在所述阵列基板10上形成所述像素定义层20,并利用光刻工艺在所述像素定义层20上形成多个第一开口201,所述第一开口201与所述显示单元304一一对应。
另外,在形成所述像素定义层20之间还包括步骤,即在所述阵列基板10上形成阳极层301。所述阳极层301包括多个阳极3011,所述阳极3011与所述第一开口201一一对应。
S30、在所述阵列基板10上形成发光器件层30;
请参阅图7C,在所述第一开口201内形成发光层302,所述发光层302包括多个发光单元3021,所述发光单元3021与所述阳极3011一一对应;最后,在所述发光层302及所述像素定义层20上形成阴极层303。
形成的所述发光器件层30包括多个设置于所述第一开口201内的显示单元304。所述显示单元304包括形成于所述阵列基板10上的阳极3011、形成于所述阳极层301上的发光单元3021及形成于所述发光单元3021上的阴极层303。
所述显示单元304为红色子像素、绿色子像素、蓝色子像素中的一种,相邻两所述显示单元304的子像素颜色不相同。
请参阅图7D,为了避免封装层工艺中的光刻工艺破坏发光器件层30中有机层,所述显示面板还包括形成于所述隔挡墙405表面的第一保护层407。
在一种实施例中,所述第一保护层407的材料与所述封装层中的无机层的材料可以相同。
S40、在所述发光器件层30上形成封装层;
所述封装层包括多个呈阵列分布的封装单元401,相邻两所述封装单元401之间设置有隔挡墙,相邻两所述隔挡墙405之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙405之间对应至少一所述显示单元304。
请参阅图8,图8为本申请显示面板制作方法的第二种步骤图。
步骤S40具体包括:
S401、在所述发光器件层30上形成至少两所述隔挡墙;
相邻两所述封装单元401之间还设置有隔挡墙405,相邻两所述隔挡墙之间设置有至少一有机层与至少一无机层。
相邻两所述隔挡墙405之间对应至少一所述显示单元304。
在一种实施例中,请参阅图7E,相邻两所述隔挡墙405之间对应一所述显示单元304;
在一种实施例中,请参阅图7F,相邻两所述隔挡墙405之间对应三个所述显示单元304。
所述隔挡墙形成于所述阴极层303上。
在一种实施例中,所述隔挡墙405在所述像素定义层20上的正投影位于相邻两所述第一开口201之间所述像素定义层20上。
在一种实施例中,所述隔挡墙形成于所述显示面板的非发光区,所述隔挡墙不影响所述显示面板的开口率。
所述隔挡墙为倒梯形、倒三角形中一种。
在一种实施例中,所述隔挡墙为倒梯形。
在一种实施例中,所述隔挡墙的厚度为1~20微米。
在一种实施例中,所述隔挡墙包括无机材料。
请参阅图7G,为了进一步增加封装层的阻水氧性能,所述显示面板还包括位于所述隔挡墙405与所述发光器件层30之间的第二保护层408。
在一种实施例中,所述第二保护层408的材料包括无机膜层或金属薄膜中的一种。
S402、在所述隔挡墙及所述发光器件层30上沉积一无机膜层,以形成第一无机层402和第二无机层404;
请参阅图7H,所述第二无机层404与所述第一无机层402在同一道工艺中形成。
在一种实施例中,所述第一无机层402及所述第三无机层406的材料可以为氮化硅、氮氧化硅、三氧化二铝、二氧化钛等阻水氧的无机膜中的至少一种。
S403、在相邻两所述隔挡墙之间形成第一有机层403;
请参阅图7I,形成的所述第一有机层403的高度不超过所述第三无机层406。所述隔挡墙405与所述第三无机层406的厚度不大于所述第一无机层402与所述第一有机层403的厚度。
在一种实施例中,所述隔挡墙405的厚度与所述第一有机层403的厚度相同。
S404、在所述第一有机层403及所述第三无机层406上形成第二无机层404;
请参阅图7J,所述第二无机层404覆盖所述第三无机层406及第一有机层403,并利用光刻工艺将所述第二无机层404分割成多个呈阵列分布的第二无机层单元4041。
相邻两所述第二无机层单元4041之间包括横纵交错的凹槽4042,所述凹槽4042在所述隔挡墙405上的正投影位于所述隔挡墙405内。
在一种实施例中,所述第二无机层404的材料与所述第一无机层402或所述第三无机层406的材料相同。
根据本申请的另一个方面,还提供了一种显示模组,所述显示模组包括所述显示面板,还包括在所述显示面板上依次设置的触控层、偏光层和盖板层,其中,所述封装层通过第一光学胶层与所述触控层粘接,所述偏光层通过第二光学胶层与所述盖板层粘接。
根据本申请的又一个方面,还提供了一种电子装置,所述电子装置包括所述显示模组;所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。
所述显示模组的工作原理、所述电子装置的工作原理与所述显示面板的工作原理相似,所述显示模组的工作原理以及所述电子装置的工作原理具体可以参考所述显示面板的工作原理,这里不做赘述。
本申请提出了一种显示面板及其制作方法、显示模组,所述显示面板包括阵列基板;位于所述阵列基板上的像素定义层,包括第一开口;位于所述阵列基板上的发光器件层,包括设置于所述第一开口内的显示单元;位于所述发光器件层上的封装层,包括隔挡墙,其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。本申请通过在所述封装上设置一隔挡墙,相邻两所述隔挡墙之间设置有交替叠加的无机层和有机层,使得所述封装层分区域进行封装,减小了所述封装层的内应力,增加了封装层的柔性。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板,其中,包括:
    阵列基板;
    位于所述阵列基板上的像素定义层,包括第一开口;
    位于所述阵列基板上的发光器件层,包括设置于所述第一开口内的显示单元;
    位于所述发光器件层上的封装层,包括至少两封装单元,相邻两所述封装单元之间设置有隔挡墙;
    其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
  2. 根据权利要求1所述显示面板,其中,所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上。
  3. 根据权利要求1所述显示面板,其中,所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的第一有机层、及位于所述第一有机层上的第二无机层;
    相邻两所述隔挡墙之间包括所述第一无机层及所述第一有机层。
  4. 根据权利要求3所述显示面板,其中,所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽;
    所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
  5. 根据权利要求3所述显示面板,其中,所述封装层还包括位于所述隔挡墙与所述第二无机层之间的第三无机层,所述第三无机层与所述第一无机层在同一道工艺中形成;
    其中,所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度。
  6. 根据权利要求1所述显示面板,其中,所述隔挡墙为倒梯形、倒三角形中一种。
  7. 根据权利要求1所述显示面板,其中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
  8. 根据权利要求1所述显示面板,其中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
    所述第二保护层包括无机膜层或金属薄膜中的一种。
  9. 一种显示面板的制作方法,其中,包括:
    提供一阵列基板;
    在所述阵列基板上形成像素定义层,
    所述像素定义层包括包括第一开口;
    在所述阵列基板上形成发光器件层,
    所述发光器件层包括设置于所述第一开口内的显示单元;
    在所述发光器件层上形成封装层,
    所述封装层包括至少两封装单元,相邻两所述封装单元之间设置有隔挡墙,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
  10. 根据权利要求9所述的制作方法,其中,在所述发光器件层上形成封装层的步骤包括:
    在所述发光器件层上形成至少两所述隔挡墙,
    所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上;
    在所述隔挡墙及所述发光器件层上沉积一无机膜层,以形成第一无机层和第三无机层,
    所述第一无机层位于相邻两所述隔挡墙之间的所述发光器件层上,所述第三无机层位于所述隔挡墙上;
    在相邻两所述隔挡墙之间形成第一有机层,
    所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度;
    在所述第一有机层及所述第三无机层上形成第二无机层,
    所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽,所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
  11. 根据权利要求9所述的制作方法,其中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
  12. 根据权利要求9所述的制作方法,其中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
    所述第二保护层包括无机膜层或金属薄膜中的一种。
  13. 一种显示模组,包括显示面板、及位于所述显示面板上的触控层、偏光层和盖板层,其中,所述显示面板包括:
    阵列基板;
    位于所述阵列基板上的像素定义层,包括第一开口;
    位于所述阵列基板上的发光器件层,包括设置于所述第一开口内的显示单元;
    位于所述发光器件层上的封装层,包括至少两封装单元,相邻两所述封装单元之间设置有隔挡墙;
    其中,相邻两所述隔挡墙之间包括至少一无机层和至少一有机层,且相邻两所述隔挡墙之间对应至少一所述显示单元。
  14. 根据权利要求13所述显示模组,其中,所述隔挡墙在所述像素定义层上的正投影,位于相邻两所述第一开口之间的所述像素定义层上。
  15. 根据权利要求13所述显示模组,其中,所述封装层包括位于所述发光器件层上的第一无机层、位于所述第一无机层上的第一有机层、及位于所述第一有机层上的第二无机层;
    相邻两所述隔挡墙之间包括所述第一无机层及所述第一有机层。
  16. 根据权利要求15所述显示模组,其中,所述第二无机层包括至少两个呈阵列分布的第二无机层单元、及分离所述第二无机层单元的横纵交错的凹槽;
    所述凹槽在所述隔挡墙上的正投影位于所述隔挡墙内。
  17. 根据权利要求15所述显示模组,其中,所述封装层还包括位于所述隔挡墙与所述第二无机层之间的第三无机层,所述第三无机层与所述第一无机层在同一道工艺中形成;
    其中,所述隔挡墙与所述第三无机层的厚度不大于所述第一无机层与所述第一有机层的厚度。
  18. 根据权利要求13所述显示模组,其中,所述隔挡墙为倒梯形、倒三角形中一种。
  19. 根据权利要求13所述显示模组,其中,所述显示面板还包括位于所述隔挡墙与所述发光器件层之间的第一保护层。
  20. 根据权利要求13所述显示模组,其中,所述封装层还包括形成于所述隔挡墙表面的第二保护层;
    所述第二保护层包括无机膜层或金属薄膜中的一种。
PCT/CN2018/115536 2018-10-15 2018-11-15 显示面板及其制作方法、显示模组 WO2020077714A1 (zh)

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