WO2020191889A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2020191889A1
WO2020191889A1 PCT/CN2019/086947 CN2019086947W WO2020191889A1 WO 2020191889 A1 WO2020191889 A1 WO 2020191889A1 CN 2019086947 W CN2019086947 W CN 2019086947W WO 2020191889 A1 WO2020191889 A1 WO 2020191889A1
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Prior art keywords
layer
display panel
oled display
light
pixel
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PCT/CN2019/086947
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English (en)
French (fr)
Inventor
王坤
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武汉华星光电半导体显示技术有限公司
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Priority to US16/494,319 priority Critical patent/US11005073B2/en
Publication of WO2020191889A1 publication Critical patent/WO2020191889A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks

Definitions

  • a pixel definition layer is disposed on the substrate, the pixel definition layer defines a plurality of sub-pixel areas, the sub-pixel areas are provided with organic light-emitting materials, and the pixels between two adjacent sub-pixel areas Define the layer as a non-pixel area;
  • the film packaging layer is arranged on the cathode.
  • the filling height of the high-permeability material is kept flush with the top of the retaining wall.
  • the cross-sectional shape of the light-transmitting hole is a rhombus.
  • the refractive index of the first inorganic layer is greater than the refractive index of the first organic layer.
  • the embodiment of the present disclosure provides a manufacturing method of an OLED display panel, including the following steps:
  • S50 Filling an organic light-emitting material in the sub-pixel area
  • the high-transmittance material is filled in the light-transmitting hole by inkjet printing technology.
  • FIG. 1 is a schematic diagram of a cross-sectional structure of a first OLED display panel provided in the first embodiment of the disclosure
  • 2B is a schematic front view of the structure of the second OLED display panel provided in the first embodiment of the disclosure
  • 4A-4G are schematic diagrams of a manufacturing method of an OLED display panel provided in the second embodiment of the disclosure.
  • the present disclosure is directed to the technical problem that the under-screen camera opening used in the existing OLED display panel of the prior art will damage the integrity and aesthetics of the display panel and affect the display effect. This embodiment can solve this defect.
  • the OLED display panel 10 includes: a substrate 100; a pixel definition layer 200 is disposed on the substrate 100, and the pixel definition layer 200 defines a plurality of sub-pixel regions 300, so An organic light-emitting material is arranged in the sub-pixel area 300, wherein the organic light-emitting material can display at least three different colors, and the pixel definition layer 200 between two adjacent sub-pixel areas 300 is a non-pixel area 400
  • the light-transmitting hole 500 is opened in the pixel defining layer 200, and the light-transmitting hole 500 penetrates the pixel defining layer 200;
  • the retaining wall 600 is arranged in a plurality of the sub-pixel regions 300 separated from the camera opening In the non-pixel area 400; a cathode 700, covering the barrier wall 600 and the pixel defining layer 200; and a thin film encapsulation layer 900, disposed on the cathode 700, the sub-inside the barrier wall 600
  • the light emitted from the a pixel definition layer 200 is
  • the OLED display panel 10 also includes a thin film transistor array layer (not shown in the figure), a planarization layer (not shown in the figure), and an anode (not shown in the figure) disposed between the substrate 100 and the pixel definition layer 200 Not shown), the thin film transistor array layer is disposed on the substrate 100, the planarization layer is disposed on the thin film transistor array layer, and the anode is disposed on the planarization layer and is located In the sub-pixel area 300.
  • the light-transmitting hole 500 actually penetrates the flat layer, the anode, and the pixel defining layer 200, and the substrate 100 actually includes the thin film transistor array layer.
  • the direction from the substrate 100 to the pixel definition layer 200 is taken as the upward direction, and the opposite direction is taken as the downward direction. It is a description of the prescription position, which can refer to direct contact or indirect contact, and does not limit the specific structure.
  • the material selected for the retaining wall 600 is polystyrene (PS). Since the PS material has certain plasticity, the specific shape of the retaining wall 600 is not particularly limited.
  • the retaining wall 600 The height of the wall 600 is 1-10um, and the retaining wall 600 is a ring-shaped inverted trapezoid structure. Specifically, the end of the retaining wall 600 with a smaller cross-sectional area is set on the non-pixel area 400, and the retaining wall The end of the larger cross-sectional area of 600 is arranged on the side close to the thin film encapsulation layer 900.
  • the structure of the “wider top and narrower bottom” of the retaining wall 600 can make the light emitted from the sub-pixel area 300 reach the The inner side of the retaining wall 600 is reflected and then shot into the transparent hole 500.
  • the number of the sub-pixel regions 300 located inside the barrier wall 600 and located on both sides of the light-transmitting hole 500 is kept equal, so that the light entering the light-transmitting hole 500 remains uniform.
  • the material of the cathode 700 covers the upper surface of the barrier wall 600 and the pixel defining layer 200, and at the same time, the material of the cathode is also coated on the inner side of the barrier wall 600 to form a luminescent coating, making it reflective Sex.
  • the light-transmitting hole 500, the cathode 700, and the retaining wall 600 enclose the one sealed structure, and the light-transmitting hole 500 is filled with a high-permeability material 800.
  • the filling height of the high-permeability material 800 is Keep flush with the top of the retaining wall 600.
  • the purpose of this is to keep the cathode 700 located above the light-transmitting hole 500 level and located in the sub-pixel area 300 of the light-transmitting hole 500 Part of the emitted light can be emitted vertically above the light-transmitting hole 500 to ensure that the OLED display panel 10 normally displays images.
  • the thin film encapsulation layer 900 includes a first inorganic layer 910, a first organic layer 920, and a second inorganic layer 930 that are sequentially disposed on the cathode 700, wherein the first organic layer 920 makes the OLED display
  • the surface of the panel 10 is kept flat, and the refractive index of the first inorganic layer 910 is greater than the refractive index of the first organic layer 920, which can ensure that it is located inside the retaining wall 600, that is, located around the light-transmitting hole 500
  • the light emitted from the sub-pixel area 300 is totally reflected at the interface between the first inorganic layer 910 and the first organic layer 920, and enters the light-transmitting hole 500 to form a bright spot, so that the There is also a picture display in the light-transmitting hole 500, and because the display picture in the light-transmitting hole 500 is formed by reflection of the light emitted by the sub-pixel area 300 located around the light-transmitting hole 500,
  • FIG. 2A is a schematic front view of the structure of the OLED display panel 10 provided by an embodiment of the present disclosure.
  • the cross-sectional shape of the light-transmitting hole 500 is a rhombus
  • the cross-sectional shape of the retaining wall 600 is also a rhombus.
  • the cross-sectional shape of the light-transmitting hole 500 and the retaining wall 600 can also be designed into other shapes, such as a circle, a polygon, an ellipse, and the like.
  • the cross-sectional shapes of the light-transmitting hole 500 and the retaining wall 600 are both circular; for another example, as shown in FIG. 2C, the light-transmitting hole 500 and the retaining wall 600
  • the shapes are all polygons.
  • the manufacturing method of the OLED display panel 10 described in the first embodiment provided by the embodiments of the present disclosure includes the following steps:
  • the substrate 100 may be a glass substrate or a flexible substrate.
  • S20 forming a pixel definition layer 200 on the substrate 100, the pixel definition layer 200 defines a plurality of sub-pixel regions 300, and the pixel definition layer 200 between two adjacent sub-pixel regions 300 forms a non-pixel Area 400;
  • the pixel definition layer 200 and the film layer located under the pixel definition layer 200 are normally fabricated on the substrate 100, that is, in the embodiment of the present disclosure, the OLED display panel 10
  • the production method also includes:
  • S203 An anode is formed on the flat layer, and the anode is located in the sub-pixel area 300.
  • part of the flat layer, the anode, and the pixel definition layer 200 are etched away according to the camera opening requirements to form the light transmission hole 500, so the light transmission hole 500 penetrates the pixel definition layer 200.
  • the light-transmitting hole 500 penetrates the flat layer, the anode, and the pixel defining layer 200, and the shape of the light-transmitting hole 500 can be designed in different shapes according to actual needs, such as a rhombus or a circle. , Polygon, oval and other shapes.
  • the number of the separated sub-pixel regions 300 can be determined according to the size of the light-transmitting hole 500. Generally, it is located in the retaining wall 600 and located on both sides of the light-transmitting hole. The number of the sub-pixel regions 300 is kept equal, so that the light entering the light-transmitting hole 500 is kept uniform.
  • the retaining wall 600 is a ring-shaped inverted trapezoid structure. Similarly, the cross-sectional shape of the retaining wall 600 can be diamond, circle, polygon, oval, etc., and the retaining wall 600 is made of PS.
  • S50 Fill the sub-pixel area 300 with an organic light-emitting material
  • the organic light-emitting material can be filled in each of the sub-pixel regions 300 by an evaporation method.
  • the organic light-emitting material can display at least three different colors, generally red and green. Three primary colors of, blue.
  • the surface of the barrier wall 600 and the pixel defining layer 200 can be coated with a cathode material by evaporation method, and the cathode material is also coated on the inner side of the barrier wall 600 to form Luminous coating to make it reflective.
  • the filling height of the high permeability material 800 is kept flush with the top end of the retaining wall 600, so that the top end of the retaining wall 600 and the top end of the high permeability material 800 are on the same horizontal line , Good light transmission performance.
  • the high-transmittance material 800 is filled in the light-transmitting hole 500 by inkjet printing technology.
  • the thin film encapsulation layer 900 includes a first inorganic layer 910, a first organic layer 920, and a second inorganic layer 930 that are sequentially formed on the cathode 700, specifically including the following steps:
  • the first inorganic layer 910 is formed by a deposition method.
  • the specific method is not limited to plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), and pulsed laser deposition. Method (Pulsed Laser Deposition, PLD) and sputtering deposition methods; the material of the first inorganic layer 910 is not limited to materials such as SiNx, SiOxNy, SiOx, SiCxNy, ZnO, AlOx, etc.;
  • the refractive index of the first inorganic layer 910 is greater than the refractive index of the first organic layer 920 , So that the light emitted from the sub-pixel area 300 inside the barrier wall 600 will partially pass through the reflective surface inside the barrier wall 600, and then reflect to the first inorganic layer 910 and the first organic layer Total reflection occurs at the interface of 920, forming bright spots, so that images can also be displayed in the light-transmitting holes 500 of the OLED display panel 10, and since the display images in the light-transmitting holes 500 are formed by the light-transmitting holes 500
  • the surrounding sub-pixel area 300 is formed by reflection of the light emitted, so the display image in the light transmission hole 500 is integrated with the display image around the light transmission hole 500, which fully reduces the light transmission hole 500. Impact on the aesthetics and integrity of the OLED display panel 10.
  • the second inorganic layer 930 is formed by a deposition method, and the specific method is not limited to PECVD, ALD, PLD, sputtering deposition methods, etc.; the material of the second inorganic layer 930 is not limited to SiNx, SiOxNy, SiOx, SiCxNy , ZnO, AlOx and other materials.

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Abstract

本揭示提供一种OLED显示面板及其制作方法，通过在OLED显示面板上设置透光孔以及在透光孔周围若干子像素区外设置有挡墙及薄膜封装层，位于所述挡墙内侧的子像素区发出的部分光线在薄膜封装层界面处发生全反射，形成亮点，使得透光孔处也可显示画面，降低了屏下摄像头开口区域对OLED显示面板完整性及美观性的影响。

Description

OLED显示面板及其制作方法 技术领域
本揭示涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
 背景技术
有机发光二极管（Organic Light-Emitting Diode, OLED）器件具有结构简单、响应速度快、主动发光、低功耗等优点，在手机、平板、电视等显示领域已经有了广泛的应用。随着便携式产品差异化的发展，更高的屏占比已经成为一种趋势。为了实现更极致的全面屏，手机厂商采用了各种各样不同的设计，刘海屏、美人尖、弹出式摄像头，滑盖屏等等都能一定程度上提高手机的屏占比，但是却影响了手机的美观，阻碍了手机一体化的进程，限制了手机的三防性能。
由于手机厂商都在追求极致的全面屏设计，而前置摄像头等一系列传感器占用了显示面板的空间，限制了屏占比的进一步提升，想要将前置摄像头安置于显示面板的屏幕下方，很多手机厂商采用了在显示面板上进行开口的方式，但是当显示面板正常显示时，摄像头开口会破坏显示面板完整性和美观性，影响显示效果。
因此，需要提供一种新的OLED显示面板及其制作方法，来解决上述技术问题。
 技术问题
本揭示提供一种OLED显示面板及其制作方法，解决了现有的OLED显示面板采用的屏下摄像头开口，会破坏显示面板完整性和美观性，影响显示效果的技术问题。
 技术解决方案
为解决上述问题，本揭示提供的技术方案如下：
本揭示实施例提供一种OLED显示面板，包括：
基板；
像素定义层，设置于所述基板上，所述像素定义层限定出多个子像素区，所述子像素区内设置有有机发光材料，相邻两个所述子像素区之间的所述像素定义层为非像素区；
透光孔，开设于所述像素定义层内，所述透光孔贯穿所述像素定义层；
挡墙，设置于与所述透光孔相隔多个所述子像素区的所述非像素区内，所述挡墙选用的材料为聚苯乙烯；
阴极，覆盖所述挡墙及所述像素定义层；以及
薄膜封装层，设置于所述阴极上。
在本揭示实施例提供的OLED显示面板中，所述挡墙为环形的倒梯形结构。
在本揭示实施例提供的OLED显示面板中，所述挡墙的高度为1-10um。
在本揭示实施例提供的OLED显示面板中，所述透光孔内填充有高透材料。
在本揭示实施例提供的OLED显示面板中，所述高透材料的填充高度与所述挡墙顶端保持齐平。
在本揭示实施例提供的OLED显示面板中，所述透光孔的截面形状为菱形。
在本揭示实施例提供的OLED显示面板中，所述薄膜封装层包括依次设置于所述阴极上的第一无机层、第一有机层及第二无机层。
在本揭示实施例提供的OLED显示面板中，所述第一无机层的折射率大于所述第一有机层的折射率。
本揭示实施例提供一种OLED显示面板，包括：
基板；
像素定义层，设置于所述基板上，所述像素定义层限定出多个子像素区，所述子像素区内设置有有机发光材料，相邻两个所述子像素区之间的所述像素定义层为非像素区；
透光孔，开设于所述像素定义层内，所述透光孔贯穿所述像素定义层；
挡墙，设置于与所述透光孔相隔多个所述子像素区的所述非像素区内；
阴极，覆盖所述挡墙及所述像素定义层；以及
薄膜封装层，设置于所述阴极上。
在本揭示实施例提供的OLED显示面板中，所述挡墙为环形的倒梯形结构。
在本揭示实施例提供的OLED显示面板中，所述挡墙的高度为1-10um。
在本揭示实施例提供的OLED显示面板中，在所述挡墙的内侧涂有所述阴极材料。
在本揭示实施例提供的OLED显示面板中，所述透光孔内填充有高透材料。
在本揭示实施例提供的OLED显示面板中，所述高透材料的填充高度与所述挡墙顶端保持齐平。
在本揭示实施例提供的OLED显示面板中，所述透光孔的截面形状为菱形。
在本揭示实施例提供的OLED显示面板中，所述薄膜封装层包括依次设置于所述阴极上的第一无机层、第一有机层及第二无机层。
在本揭示实施例提供的OLED显示面板中，所述第一无机层的折射率大于所述第一有机层的折射率。
本揭示实施例提供一种OLED显示面板的制作方法，包括以下步骤：
S10：提供一基板；
S20：在所述基板上形成像素定义层，所述像素定义层限定出多个子像素区，相邻两个所述子像素区之间的所述像素定义层形成非像素区；
S30：在所述像素定义层内形成透光孔，所述透光孔贯穿所述像素定义层；
S40：在与所述透光孔相隔多个所述子像素区的所述非像素区内形成挡墙；
S50：在所述子像素区内填充有机发光材料；
S60：在所述挡墙及所述像素定义层上形成阴极；
S70：在所述透光孔内填充高透材料；以及
S80：在所述阴极上制备薄膜封装层。
在本揭示实施例提供的OLED显示面板的制作方法中，所述薄膜封装层包括依次形成于所述阴极上的第一无机层、第一有机层、第二无机层，其中所述第一无机层的折射率大于所述第一有机层的折射率。
在本揭示实施例提供的OLED显示面板的制作方法中，所述高透材料通过喷墨打印技术填充于所述透光孔内。
 有益效果
本揭示的有益效果为：本揭示提供的OLED显示面板及其制作方法，通过在所述OLED显示面板上设置透光孔以及在所述透光孔周围若干子像素区外设置有挡墙，并在所述挡墙上设置有薄膜封装层，位于所述挡墙内侧的子像素区发出的光线会有部分经过所述挡墙内侧发光面反射到达所述薄膜封装层，并在所述薄膜封装层界面处发生全反射，形成亮点，使得所述OLED显示面板的所述透光孔内也可显示画面，且显示画面与周围图像可融为一体，充分降低了所述屏下摄像头开口区域对所述OLED显示面板完整性及美观性的影响，并提高了显示效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是揭示的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本揭示实施例一提供的第一种OLED显示面板的截面结构示意图；
图2A为本揭示实施例一提供的第一种OLED显示面板的正视结构示意图；
图2B为本揭示实施例一提供的第二种OLED显示面板的正视结构示意图；
图2C为本揭示实施例一提供的第二种OLED显示面板的正视结构示意图；
图3为本揭示实施例二提供的一种OLED显示面板的制作方法的流程图；
图4A-4G为本揭示实施例二提供的一种OLED显示面板的制作方法的示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本揭示可用以实施的特定实施例。本揭示所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本揭示，而非用以限制本揭示。在图中，结构相似的单元是用以相同标号表示。
本揭示针对现有技术的现有的OLED显示面板采用的屏下摄像头开口，会破坏显示面板完整性和美观性，影响显示效果的技术问题，本实施例能够解决该缺陷。
实施例一
如图1所示，本揭示实施例提供的OLED显示面板10，包括：基板100；像素定义层200，设置于所述基板100上，所述像素定义层200限定出多个子像素区300，所述子像素区300内设置有有机发光材料，其中所述有机发光材料能够显示至少三种不同颜色，相邻两个所述子像素区300之间的所述像素定义层200为非像素区400；透光孔500，开设于所述像素定义层200内，所述透光孔500贯穿所述像素定义层200；挡墙600，设置于与所述摄像头开口相隔多个所述子像素区300的所述非像素区400内；阴极700，覆盖所述挡墙600及所述像素定义层200；以及薄膜封装层900，设置于所述阴极700上，所述挡墙600内的所述子像素区300发出的光在所述薄膜封装层900处发生全反射。
所述OLED显示面板10还包括设置于所述基板100与所述像素定义层200之间的薄膜晶体管阵列层（图中未视出）、平坦化层（图中未视出）以及阳极（图中未视出），所述薄膜晶体管阵列层设置于所述基板100上，所述平坦化层设置于所述薄膜晶体管阵列层上，所述阳极设置于设置于所述平坦化层上且位于所述子像素区300内。也就是说，所述透光孔500实际上贯穿所述平坦层、所述阳极以及所述像素定义层200，所述基板100实际上还包括所述薄膜晶体管阵列层。同时需要说明的是，在本揭示实施例中，均以从所述基板100到所述像素定义层200的方向作为朝上的方向，相反的方向则作为朝下的方向，其中上方或者下方仅仅是对所处方位的描述，可以是指直接接触，也可以是指间接接触，对具体结构不构成限定。
所述挡墙600选用的材料为聚苯乙烯（Polystyrene，PS），由于所述PS材料具有一定的可塑性，因此，所述挡墙600的具体形状不受特别限制，可选地，所述挡墙600的高度为1-10um，所述挡墙600为环形的倒梯形结构，具体地，所述挡墙600的截面面积较小的一端设置于所述非像素区400上，所述挡墙600的截面面积较大的一端设置于靠近所述薄膜封装层900的一侧，所述挡墙600的“上宽下窄”的结构能够使得从所述子像素区300发出的光线在所述挡墙600的内侧发生反射后进而射入所述透光孔500内。一般地，位于所述挡墙600内侧，且位于所述透光孔500两侧的所述子像素区300的数量保持相等，以使得射入所述透光孔500内的光线保持均匀。
所述阴极700的材料覆盖所述挡墙600及所述像素定义层200的上表面，同时在所述挡墙600的内侧也涂有所述阴极的材料以形成发光涂层，使其具有反射性。同时所述透光孔500、所述阴极700、所述挡墙600围成所述一密封结构，并在所述透光孔500内填充高透材料800，所述高透材料800的填充高度与所述挡墙600的顶端保持平齐，这样做的目的是为了使得位于所述透光孔500上方的所述阴极700保持水平，位于所述透光孔500的所述子像素区300内发出的部分光线能够垂直射出所述透光孔500上方，保证所述OLED显示面板10正常地显示画面。
进一步地，所述薄膜封装层900包括依次设置于所述阴极700上的第一无机层910、第一有机层920及第二无机层930，其中所述第一有机层920使得所述OLED显示面板10的表面保持平整，并且所述第一无机层910的折射率大于所述第一有机层920的折射率，能够保证位于所述挡墙600内侧，也就是位于所述透光孔500周围的所述子像素区300发出的光线在所述第一无机层910与所述第一有机层920的界面处发生全反射，并射入所述透光孔500内形成亮点，从而使得所述透光孔500内也有画面显示，且由于所述透光孔500内的显示画面是由位于所述透光孔500周围的所述子像素区300发出的光反射形成的，因此所述透光孔500内的显示画面与所述透光孔500周围的显示画面融为一体，充分降低了所述透光孔500对所述OLED显示面板10美观性、整体性的影响。
进一步地，如图2A所示为本揭示实施例提供的OLED显示面板10的正视结构示意图，所述透光孔500的截面形状为菱形，所述挡墙600的截面形状也为菱形，当然根据不同的子像素设计，所述透光孔500与所述挡墙600的截面形状也可设计成其他形状，如圆形、多边形、椭圆形等形状。例如，如图2B所示，所述透光孔500与所述挡墙600的截面形状均为圆形；再如，如图2C所示，所述透光孔500与所述挡墙600的形状均为多边形。
实施例二
如图3所示，本揭示实施例提供的实施例一中所述OLED显示面板10的制作方法，包括以下步骤：
S10：提供一基板100；
所述基板100可为玻璃基板或柔性基板。
S20：在所述基板100上形成像素定义层200，所述像素定义层200限定出多个子像素区300，相邻两个所述子像素区300之间的所述像素定义层200形成非像素区400；
如图4A所示，在所述基板100上正常制作所述像素定义层200及位于所述像素定义层200下方的膜层，也就是说在本揭示实施例中，所述OLED显示面板10的制作方法还包括：
S201：在所述基板100上形成薄膜晶体管层；
S202：在所述薄膜晶体管层上形成平坦层；
S203：在所述平坦层上形成阳极，所述阳极位于所述子像素区300内。
S30：在所述像素定义层200内形成透光孔500，所述透光孔500贯穿所述像素定义层200；
如图4B所示，根据摄像头开口要求将部分所述平坦层、所述阳极及所述像素定义层200刻蚀掉以形成所述透光孔500，因此所述透光孔500贯穿像素定义层200，实际上所述透光孔500贯穿所述平坦层、所述阳极以及所述像素定义层200，所述透光孔500的形状根据实际需求可设计为不同的形状，例如菱形、圆形、多边形、椭圆形等形状。
S40：在与所述透光孔500相隔多个所述子像素区300的所述非像素区400内形成挡墙600；
如图4C所示，相隔的所述子像素区300的数量可依据所述透光孔500的大小而定，一般地，位于所述挡墙600内，且位于所述透光孔两侧的所述子像素区300内的数量保持相等，以使得射入所述透光孔500内的光线保持均匀。所述挡墙600为环形的倒梯形结构，同样地，所述挡墙600的截面形状可为菱形、圆形、多边形、椭圆形等形状，所述挡墙600的材料为PS。
S50：在所述子像素区300内填充有机发光材料；
如图4D所示，可采用蒸镀的方法将所述有机发光材料填充于各个所述子像素区300内，所述有机发光材料为能够显示至少三种不同颜色，一般来说为红、绿、蓝三种基色。
S60：在所述挡墙600及所述像素定义层200上形成阴极700；
如图4E所示，可采用蒸镀的方法在所述挡墙600及所述像素定义层200的表面涂有阴极材料，同时在所述挡墙600的内侧也涂有所述阴极材料以形成发光涂层，使其具有反射性。
S70：在所述透光孔500内填充高透材料800；
如图4F所示，使所述高透材料800的填充高度与所述挡墙600的顶端保持齐平，进而使得所述挡墙600的顶端与所述高透材料800的顶端位于同一水平线上，透光性能较好。所述高透材料800通过喷墨打印技术填充于所述透光孔500内。
S80：在所述阴极700上制备薄膜封装层900。
如图4G所示，所述薄膜封装层900包括依次形成与所述阴极700上的第一无机层910、第一有机层920、第二无机层930，具体包括以下步骤：
S801：在所述阴极700上形成所述第一无机层910；
采用沉积的方法形成所述第一无机层910，具体方法不限于等离子体增强化学的气相沉积法(Plasma Enhanced Chemical Vapor Deposition ，PECVD)、原子层沉积法（Atomic layer deposition ，ALD）、脉冲激光沉积法（Pulsed Laser Deposition，PLD）以及溅射沉积方法等；所述第一无机层910的材料不限于SiNx、SiOxNy、SiOx、SiCxNy、ZnO、AlOx等材料；
S802：在所述第一无机层910上形成所述第一有机层920；
需保证所述第一有机层920能够使得制成的所述OLED显示面板10的表面保持平整，同时，所述所述第一无机层910的折射率大于所述第一有机层920的折射率，使得从所述挡墙600内侧的所述子像素区300发出的光线会有部分经过所述挡墙600内侧的反光面，继而反射到达所述第一无机层910与所述第一有机层920的界面处发生全反射，形成亮点，使得所述OLED显示面板10的透光孔500内也可显示画面，且由于所述透光孔500内的显示画面是由位于所述透光孔500周围的所述子像素区300发出的光反射形成的，因此所述透光孔500内的显示画面与所述透光孔500周围的显示画面融为一体，充分降低了所述透光孔500对所述OLED显示面板10美观性、整体性的影响。
S803：在所述第一有机层920上形成所述第二无机层930；
同样地，采用沉积的方法形成所述第二无机层930，具体方法不限于PECVD、ALD、PLD以及溅射沉积方法等；所述第二无机层930的材料不限于SiNx、SiOxNy、SiOx、SiCxNy、ZnO、AlOx等材料。
有益效果为：本揭示提供的OLED显示面板及其制作方法，通过在所述OLED显示面板上设置透光孔以及在所述透光孔周围若干子像素区外设置有挡墙，并在所述挡墙上设置有薄膜封装层，位于所述挡墙内侧的子像素区发出的光线会有部分经过所述挡墙内侧发光面反射到达所述薄膜封装层，并在所述薄膜封装层界面处发生全反射，形成亮点，使得所述OLED显示面板的所述透光孔内也可显示画面，且显示画面与周围图像可融为一体，充分降低了所述屏下摄像头开口区域对所述OLED显示面板完整性及美观性的影响，并提高了显示效果。
综上所述，虽然本揭示实施例已以优选实施例揭露如上，但上述优选实施例并非用以限制本揭示，本领域的普通技术人员，在不脱离本揭示的精神和范围内，均可作各种更动与润饰，因此本揭示的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，包括：
    基板；
    像素定义层，设置于所述基板上，所述像素定义层限定出多个子像素区，所述子像素区内设置有有机发光材料，相邻两个所述子像素区之间的所述像素定义层为非像素区；
    透光孔，开设于所述像素定义层内，所述透光孔贯穿所述像素定义层；
    挡墙，设置于与所述透光孔相隔多个所述子像素区的所述非像素区内，所述挡墙选用的材料为聚苯乙烯；
    阴极，覆盖所述挡墙及所述像素定义层；以及
    薄膜封装层，设置于所述阴极上。
  2. 根据权利要求1所述的OLED显示面板，其中所述挡墙为环形的倒梯形结构。
  3. 根据权利要求2所述的OLED显示面板，其中所述挡墙的高度为1-10um。
  4. 根据权利要求1所述的OLED显示面板，其中所述透光孔内填充有高透材料。
  5. 根据权利要求4所述的OLED显示面板，其中所述高透材料的填充高度与所述挡墙顶端保持齐平。
  6. 根据权利要求4所述的OLED显示面板，其中所述透光孔的截面形状为菱形。
  7. 根据权利要求1所述的OLED显示面板，其中所述薄膜封装层包括依次设置于所述阴极上的第一无机层、第一有机层及第二无机层。
  8. 根据权利要求7所述的OLED显示面板，其中所述第一无机层的折射率大于所述第一有机层的折射率。
  9. 一种OLED显示面板，包括：
    基板；
    像素定义层，设置于所述基板上，所述像素定义层限定出多个子像素区，所述子像素区内设置有有机发光材料，相邻两个所述子像素区之间的所述像素定义层为非像素区；
    透光孔，开设于所述像素定义层内，所述透光孔贯穿所述像素定义层；
    挡墙，设置于与所述透光孔相隔多个所述子像素区的所述非像素区内；
    阴极，覆盖所述挡墙及所述像素定义层；以及
    薄膜封装层，设置于所述阴极上。
  10. 根据权利要求9所述的OLED显示面板，其中所述挡墙为环形的倒梯形结构。
  11. 根据权利要求10所述的OLED显示面板，其中所述挡墙的高度为1-10um。
  12. 根据权利要求9所述的OLED显示面板，其中在所述挡墙的内侧涂有所述阴极材料。
  13. 根据权利要求9所述的OLED显示面板，其中所述透光孔内填充有高透材料。
  14. 根据权利要求13所述的OLED显示面板，其中所述高透材料的填充高度与所述挡墙顶端保持齐平。
  15. 根据权利要求13所述的OLED显示面板，其中所述透光孔的截面形状为菱形。
  16. 根据权利要求9所述的OLED显示面板，其中所述薄膜封装层包括依次设置于所述阴极上的第一无机层、第一有机层及第二无机层。
  17. 根据权利要求16所述的OLED显示面板，其中所述第一无机层的折射率大于所述第一有机层的折射率。
  18. 一种OLED显示面板的制作方法，包括以下步骤：
    S10：提供一基板；
    S20：在所述基板上形成像素定义层，所述像素定义层限定出多个子像素区，相邻两个所述子像素区之间的所述像素定义层形成非像素区；
    S30：在所述像素定义层内形成透光孔，所述透光孔贯穿所述像素定义层；
    S40：在与所述透光孔相隔多个所述子像素区的所述非像素区内形成挡墙；
    S50：在所述子像素区内填充有机发光材料；
    S60：在所述挡墙及所述像素定义层上形成阴极；
    S70：在所述透光孔内填充高透材料；以及
    S80：在所述阴极上制备薄膜封装层。
  19. 根据权利要求18所述的OLED显示面板的制作方法，其中所述薄膜封装层包括依次形成于所述阴极上的第一无机层、第一有机层、第二无机层，其中所述第一无机层的折射率大于所述第一有机层的折射率。
  20. 根据权利要求18所述的OLED显示面板的制作方法，其中所述高透材料通过喷墨打印技术填充于所述透光孔内。
PCT/CN2019/086947 2019-03-28 2019-05-15 Oled显示面板及其制作方法 WO2020191889A1 (zh)

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US11581487B2 (en) 2017-04-26 2023-02-14 Oti Lumionics Inc. Patterned conductive coating for surface of an opto-electronic device
US11700747B2 (en) 2019-06-26 2023-07-11 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US11730012B2 (en) 2019-03-07 2023-08-15 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
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CN111276516B (zh) 2020-02-07 2021-06-01 武汉华星光电半导体显示技术有限公司 显示面板及显示面板制备方法
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US11706969B2 (en) 2015-10-26 2023-07-18 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11088327B2 (en) 2015-10-26 2021-08-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11158803B2 (en) 2015-10-26 2021-10-26 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
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US11335855B2 (en) 2015-10-26 2022-05-17 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11785831B2 (en) 2015-10-26 2023-10-10 Oti Lumionics Inc. Method for patterning a coating on a surface and device including a patterned coating
US11581487B2 (en) 2017-04-26 2023-02-14 Oti Lumionics Inc. Patterned conductive coating for surface of an opto-electronic device
US11730048B2 (en) 2017-05-17 2023-08-15 OTI Lumionic Inc. Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating
US11043636B2 (en) 2017-05-17 2021-06-22 Oti Lumionics Inc. Method for selectively depositing a conductive coating over a patterning coating and device including a conductive coating
US11751415B2 (en) 2018-02-02 2023-09-05 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11730012B2 (en) 2019-03-07 2023-08-15 Oti Lumionics Inc. Materials for forming a nucleation-inhibiting coating and devices incorporating same
US11700747B2 (en) 2019-06-26 2023-07-11 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US11832473B2 (en) 2019-06-26 2023-11-28 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics
US12004383B2 (en) 2019-06-26 2024-06-04 Oti Lumionics Inc. Optoelectronic device including light transmissive regions, with light diffraction characteristics

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