WO2021168977A1 - 一种显示面板及其制作方法以及电子装置 - Google Patents

一种显示面板及其制作方法以及电子装置 Download PDF

Info

Publication number
WO2021168977A1
WO2021168977A1 PCT/CN2020/081706 CN2020081706W WO2021168977A1 WO 2021168977 A1 WO2021168977 A1 WO 2021168977A1 CN 2020081706 W CN2020081706 W CN 2020081706W WO 2021168977 A1 WO2021168977 A1 WO 2021168977A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
layer
display panel
light
sub
Prior art date
Application number
PCT/CN2020/081706
Other languages
English (en)
French (fr)
Inventor
陈黎暄
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/756,186 priority Critical patent/US11557699B2/en
Publication of WO2021168977A1 publication Critical patent/WO2021168977A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the present invention relates to the field of display technology, and in particular to a display panel, a manufacturing method thereof, and an electronic device.
  • the existing display panel usually includes a plurality of light-emitting units, and each light-emitting unit includes a red pixel, a green pixel, and a blue pixel.
  • each color pixel includes a first electrode, a light emitting diode, and a second electrode.
  • the light-emitting diodes of the green pixels are the same as the light-emitting diodes of the blue pixels, a color conversion layer needs to be fabricated on the green pixels, resulting in different heights between the green pixels and the blue pixels, which makes the thickness of the display panel inconsistent, thereby reducing the display effect .
  • the purpose of the present invention is to provide a display panel, a manufacturing method thereof, and an electronic device, which can make the thickness of the display panel more uniform, thereby improving the display effect.
  • the present invention provides a display panel, including:
  • the main body which includes:
  • a plurality of light-emitting units includes a plurality of pixels, the pixels are arranged in the opening area; wherein the heights of at least two pixels in the light-emitting unit are different;
  • the cover plate is arranged opposite to the driving substrate
  • a transparent spacer layer is further provided between the main body and the cover plate, and the transparent spacer layer is used to keep the distance between the driving substrate and the cover plate consistent.
  • the present invention also provides an electronic device, which includes the above-mentioned display panel.
  • the present invention also provides a manufacturing method of a display panel, which includes:
  • a transparent spacer layer is made between the substrate and the cover plate.
  • the display panel, the manufacturing method thereof, and the electronic device of the present invention include a driving substrate; a main body including a pixel definition layer, which is provided on the driving substrate, and includes a plurality of opening regions; a plurality of light-emitting units, the light-emitting unit Comprising a plurality of pixels, the pixels are arranged in the opening area; wherein the heights of at least two pixels in the light-emitting unit are different; a cover plate is arranged opposite to the driving substrate; the main body and the cover plate There is also a transparent spacer layer between them, and the transparent spacer layer is used to keep the distance between the drive substrate and the cover plate consistent; due to the addition of the transparent spacer layer, the gap between the drive substrate and the cover plate is maintained Consistent, thereby making the thickness of the display panel more uniform, and improving the display effect.
  • FIG. 1 is a schematic diagram of the structure of a display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of a display panel according to another embodiment of the invention.
  • FIG. 3 is a schematic structural diagram of a display panel according to another embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of the first and second steps of the manufacturer of the display panel according to an embodiment of the present invention.
  • FIG. 5 is a schematic diagram of the third step of the structure of the manufacturer of the display panel according to an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the fourth and fifth steps of the manufacturer of the display panel according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
  • the display panel 100 of this embodiment includes: a driving substrate 10, a main body 40, and a cover 20.
  • the driving substrate 10 includes a base substrate and a switch array layer provided on the base substrate, and the switch array layer includes a plurality of thin film transistors.
  • the main body part 40 includes a pixel definition layer 11 and a light emitting unit 13.
  • the pixel defining layer 11 is disposed on the driving substrate 10, and the pixel defining layer 11 includes a plurality of opening regions (not shown in the figure). Wherein, a reflective layer may also be provided above the pixel defining layer 11, so as to further increase the light output rate.
  • the light emitting unit 13 includes a plurality of pixels 131 to 133, and the pixels are arranged in the opening area; that is, each pixel corresponds to an opening area.
  • the light emitting unit 13 includes, for example, red pixels 131, green pixels 132, and blue pixels 133.
  • the heights of at least two pixels in the light-emitting unit 13 are different.
  • the height of the red pixel 131 and the green pixel 132 are different, and the height of the red pixel 131 is equal to the height of the blue pixel 133, and the pixel includes two main pixels 131, 133.
  • the primary pixel 132 the height of the main pixels 131, 133 is smaller than the height of the sub-pixel 132.
  • the main pixels include red pixels and blue pixels
  • the sub pixels include green pixels.
  • the height of each pixel in the light-emitting unit is not limited to this.
  • the cross-sectional structure of the main pixels 131 and 133 and the cross-sectional structure of the sub-pixel 132 both include a first electrode 31 and a light-emitting diode 32 or 32' and a second electrode 33 sequentially arranged on the first electrode 31;
  • the cross-sectional structure of the sub-pixel 132 further includes a color conversion layer 34, and the color conversion layer 34 is disposed on the second electrode 33.
  • the color conversion layer may include quantum dot thin films and functional films of corresponding colors.
  • the light emitting diode 32 is a blue light emitting diode
  • the light emitting diode 32' is a red light emitting diode
  • the color conversion layer 34 is a green color conversion layer.
  • the color of the main pixel and the sub-pixel is not limited to this
  • the color of the light emitting diode is not limited to this
  • the color of the color conversion layer is not limited to this.
  • the light-emitting diode 32' is also a blue light-emitting diode
  • a color conversion layer is provided above the second electrode of the light-emitting diode 32'.
  • the color conversion layer may include a quantum dot film of a corresponding color and a function. membrane.
  • the quantum dot film includes light-emitting quantum dots and a light-scattering agent.
  • the light-scattering agent can increase the propagation path of the excitation light and control the distance between the light-emitting quantum dots.
  • the functional film includes a plurality of film layers arranged in a stack, and the refractive index of each film layer may be the same or different, and the thickness of each film layer may be the same or different, but the refractive indexes of two adjacent film layers are different.
  • the material of the functional film may be an inorganic material or an organic material. It is understandable that the light-emitting unit 13 may also include other pixels, such as white pixels or yellow pixels, and the number of the light-emitting units 13 is not limited thereto.
  • the main body portion 40 may further include an insulating layer 12, the insulating layer 12 is filled in the opening area, and the insulating layer 12 surrounds the periphery of the pixel 13 .
  • the insulating layer 13 may be doped with nanoparticles.
  • a reflective layer (not shown in the figure) is provided on the upper surface of the insulating layer 13.
  • a transparent spacer layer 14 is also provided on the main body portion 40, wherein the transparent spacer layer 14 covers the main body portion 40, that is, covers the pixel defining layer 11, the insulating layer 12, and the light-emitting unit 13, that is, the transparent spacer layer 14 is provided between the main body 40 and the cover plate 20, and the transparent spacer layer 14 is used to keep the distance between the drive substrate 10 and the cover plate 20 consistent, or to keep the distance between the drive substrate 10 and the cover plate 20 consistent.
  • the upper surface of the drive substrate 10 is kept flat.
  • the transparent spacer layer 14 in this embodiment has a whole-layer structure.
  • the material of the transparent spacer layer 14 is an elastic material, such as one or more of transparent silicone, rubber, latex, and plastic.
  • the material of the transparent spacer layer 14 may include at least one of a siloxane-based material and an acrylic-based material.
  • the cover plate 20 is arranged opposite to the driving substrate 10.
  • the material of the cover plate 20 can be a plastic with a certain hardness such as polyethylene terephthalate (PET) or polycarbonate (PC), or it can be glass.
  • the present invention also provides a method for manufacturing the above-mentioned display panel.
  • the method specifically includes the following steps:
  • a pixel definition layer 11 is fabricated on the driving substrate 10, and the pixel definition layer 11 is patterned to form a plurality of opening regions 102.
  • the first electrode 31 and the light emitting diode 32 or 32' are sequentially fabricated in the opening area 102.
  • a second electrode 33 is formed on the light emitting diode 32 or 32'.
  • the color conversion layer 34 is formed on the light emitting diode 32 corresponding to the green pixel 132. At this time, the color conversion layer 34 is not required to be formed on the light emitting diode 32 corresponding to the blue pixel 133.
  • the light emitting diode 32 ′ corresponding to the pixel 131 does not require a color conversion layer to form the substrate 50.
  • the color conversion layer is not limited to being fabricated on the light emitting diode 32 corresponding to the green pixel.
  • a transparent spacer layer 14 is formed on the color conversion layer 34, the second electrode 33, the insulating layer 12 and the pixel definition layer 11. That is, the transparent spacer layer 14 is fabricated on the substrate 50 at this time.
  • the base 50 includes the driving substrate 10 and the main body 40. The specific structure and material of the transparent spacer layer 14 are described above.
  • the cover plate 20 is attached to the transparent spacer layer 14.
  • the above method may further include:
  • an insulating material is deposited in the opening area 102 not covered by the first electrode 31 and the light emitting diode 32 or 32', on the light emitting diode 32 or 32', and on the pixel definition layer 11.
  • An insulating layer is formed; then the insulating layer on the light-emitting diode 32 or 32' and the pixel defining layer 11 is removed, so that the insulating layer 12 is only located on the periphery of the first electrode 31 and the light-emitting diode 32 or 32'.
  • FIG. 2 is a schematic structural diagram of a display panel according to another embodiment of the present invention.
  • the transparent spacer layer 14 of this embodiment is a patterned structure, that is, the transparent spacer layer 14 is provided on the light-emitting unit 13.
  • the transparent spacer layer 14 of this embodiment includes a plurality of spacers 101, and the spacers 101 correspond to the positions of the light-emitting units 13.
  • the spacer 101 includes a main spacer 141 and a sub spacer 142, the main spacer 141 corresponds to the position of the main pixel 131 or 133; the sub spacer 142 and the sub pixel The position of 132 corresponds; wherein the height of the main spacer 141 is greater than the height of the sub spacer 142.
  • the second difference is equal to the first difference.
  • the transparent spacer layer is made on the main body, the upper surface of the driving substrate is made flatter, and the gap between the driving substrate and the cover plate is kept consistent, even if the thickness of the display panel is more uniform, thereby improving the display effect.
  • the difference between the manufacturing method of the display panel of this embodiment and the previous embodiment is that: between steps S105 and S106, the method further includes:
  • S201 Perform a patterning process on the transparent spacer layer 14 to form a spacer 101.
  • FIG. 3 is a schematic structural diagram of a display panel according to another embodiment of the present invention.
  • the transparent spacer layer 14 of this embodiment is provided on the side of the cover plate 20 close to the main body 40. In one embodiment, the transparent spacer layer 14 is provided under the cover plate 20.
  • the present invention also provides a manufacturing method of a display panel.
  • the manufacturing method of the display panel of this embodiment differs from the previous embodiment in that the methods of the fifth and sixth steps are different.
  • the fifth and sixth steps of this embodiment are different from each other. The steps are as follows:
  • a transparent spacer layer 14 is formed under the cover plate 20.
  • the transparent spacer layer 14 is patterned to form spacers 101. The specific structure and material of the transparent spacer layer 14 are described above.
  • the cover plate 20 is attached to the above-mentioned base 50.
  • the transparent spacer layer is made under the cover plate, the upper surface of the entire display panel is made flatter, that is, the gap between the drive substrate and the cover plate is kept consistent, even if the thickness of the display panel is more uniform, thereby improving the display effect .
  • the present invention also provides an electronic device, which includes any of the above-mentioned display panels 100.
  • the display panel, the manufacturing method thereof, and the electronic device of the present invention include a driving substrate; a main body including a pixel definition layer, which is provided on the driving substrate, and includes a plurality of opening regions; and a plurality of light-emitting units including a plurality of The pixel is arranged in the opening area; wherein the heights of at least two pixels in the light-emitting unit are different; the cover plate is arranged opposite to the driving substrate; A transparent spacer layer is provided, and the transparent spacer layer is used to keep the distance between the driving substrate and the cover plate consistent; due to the addition of the transparent spacer layer, the gap between the driving substrate and the cover plate is kept consistent, As a result, the thickness of the display panel is more uniform, and the display effect is improved.

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种显示面板及其制作方法以及电子装置，该显示面板包括：像素定义层设于驱动基板上，其包括多个开口区域；发光单元包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；盖板，与所述驱动基板相对设置；所述主体部与所述盖板之间还设置有透明间隔层。

Description

一种显示面板及其制作方法以及电子装置 技术领域
本发明涉及显示技术领域，特别是涉及一种显示面板及其制作方法以及电子装置。
背景技术
现有的显示面板通常包括多个发光单元，每个发光单元包括红色像素、绿色像素、蓝色像素，然而每种颜色的像素均包括第一电极、发光二极管以及第二电极。
发明概述
技术问题
由于绿色像素的发光二极管与蓝色像素的发光二极管相同，因此需要在绿色像素上制作色彩转换层，导致绿色像素与蓝色像素的高度不同，从而使得显示面板的厚度不一致，进而降低了显示效果。
因此，有必要提供一种显示面板及其制作方法以及电子装置，以解决现有技术所存在的问题。技术解决方案
本发明的目的在于提供一种显示面板及其制作方法以及电子装置，能够使显示面板的厚度更加均匀，进而提高了显示效果。
为解决上述技术问题，本发明提供一种显示面板，包括：
驱动基板；
主体部，其包括：
像素定义层，设于所述驱动基板上，所述像素定义层包括多个开口区域；
多个发光单元，所述发光单元包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；
盖板，与所述驱动基板相对设置；
所述主体部与所述盖板之间还设置有透明间隔层，所述透明间隔层用于使所述驱动基板与所述盖板之间的间距保持一致。
本发明还提供一种电子装置，其包括上述显示面板。
本发明还提供一种显示面板的制作方法，其包括：
在驱动基板上制作像素定义层，对所述像素定义层进行图案化处理，以形成多个开口区域；
在所述开口区域内依次制作第一电极和发光二极管；
在位于所述第一电极和所述发光二极管周缘的开口区域内形成绝缘层；
在所述发光二极管上制作第二电极；
在部分所述第二电极上制作色彩转换层，得到基底；
在所述基底和盖板之间制作透明间隔层。
问题的解决方案
发明的有益效果
有益效果
本发明的显示面板及其制作方法以及电子装置，包括驱动基板；主体部，其包括像素定义层，设于所述驱动基板上，其包括多个开口区域；多个发光单元，所述发光单元包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；盖板，与所述驱动基板相对设置；所述主体部与所述盖板之间还设置有透明间隔层，所述透明间隔层用于使所述驱动基板与所述盖板之间的间距保持一致；由于增加透明间隔层，使得驱动基板和盖板之间的间隙保持一致，进而使显示面板的厚度更加均匀，提高了显示效果。
对附图的简要说明
附图说明
图1为本发明一实施例的显示面板的结构示意图；
图2为本发明另一实施例的显示面板的结构示意图；
图3为本发明又一实施例的显示面板的结构示意图；
图4为本发明一实施方式的显示面板的制作方的第一步和第二步结构示意图；
图5为本发明一实施方式的显示面板的制作方的第三步结构示意图；
图6为本发明一实施方式的显示面板的制作方的第四步和第五步的结构示意图 。
发明实施例
本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
本申请的说明书和权利要求书及上述附图中的术语“第一”、“第二”等是用于区别不同对象，而不是用于描述特定顺序。此外，术语“包括”和“具有”以及它们任何变形，意图在于覆盖不排他的包含。
请参照图1，图1为本发明一实施例的显示面板的结构示意图。
本实施例的显示面板100包括：驱动基板10、主体部40、盖板20。
在一实施方式中，驱动基板10包括衬底基板以及设于衬底基板上的开关阵列层，开关阵列层包括多个薄膜晶体管。
主体部40包括像素定义层11和发光单元13。
像素定义层11设于所述驱动基板10上，像素定义层11包括多个开口区域(图中未标出)。其中所述像素定义层11的上方也可设置有反射层，从而进一步提高出光率。
发光单元13包括多个像素131至133，所述像素设于所述开口区域内；也即每个像素对应一开口区域。在一实施方式中，发光单元13比如包括红色像素131、绿色像素132以及蓝色像素133。其中所述发光单元13中至少两个像素的高度不同。比如在一实施方式中，以红色像素131与绿色像素132的高度不同，且红色像素131的高度与蓝色像素133的高度相等为例进行说明，其中所述像素包括两个主像素131、133和一次像素132，所述主像素131、133的高度小于所述次像素132的高度。其中所述主像素131的高度和次像素132的高度之间具有第一差值。也即主像素包括红色像素和蓝色像素，次像素包括绿色像素。当然，发光单元中各像素的高度不限于此。
所述主像素131、133的截面结构和所述次像素132的截面结构均包括第一电极31以及依次设于所述第一电极31上的发光二极管32或者32′和第二电极33；所述次像素132的截面结构还包括色彩转换层34，所述色彩转换层34设于所述第二电极33上。该色彩转换层可包括对应颜色的量子点薄膜和功能膜。
在一实施方式中，发光二极管32为蓝色发光二极管，发光二极管32′为红色发光二极管，色彩转换层34为绿色色彩转换层。当然，可以理解的，主像素和子像素的颜色不限于此，发光二极管的颜色不限于此，色彩转换层的颜色也不限于此。比如在其他实施方式中，该发光二极管32′也为蓝色发光二极管，在发光二极管32′的第二电极的上方设置有色彩转换层，该色彩转换层可包括对应颜色的量子点薄膜和功能膜。量子点薄膜包括发光量子点和散光剂，散光剂可以增大激发光的传播路径、控制发光量子点之间的间距。功能膜包括层叠设置的多个膜层，每个膜层的折射率可以相同也可以不同，每个膜层的厚度可以相同也可以不同，但相邻两膜层的折射率不同。另外，功能膜的材料可以为无机材料也可以为有机材料。可以理解的，发光单元13也可包括其他像素，比如白色像素或者黄色像素，发光单元13的数量不限于此。
在一实施方式中，为了防止上下电极发生短路，所述主体部40还可包括绝缘层12，绝缘层12填充在所述开口区域内，且所述绝缘层12环绕在所述像素13的周缘。为了进一步提高出光率，所述绝缘层13中可掺杂有纳米颗粒。在一实施方式中，为了进一步提高出光率，绝缘层13的上表面设置有反射层(图中未示出)。
在所述主体部40上还设置有透明间隔层14，其中所述透明间隔层14覆盖所述主体部40，也即覆盖像素定义层11、绝缘层12以及发光单元13，也即透明间隔层14设置在所述主体部40与所述盖板20之间，所述透明间隔层14用于使所述驱动基板10与所述盖板20之间的间距保持一致，或者说用于使所述驱动基板10的上表面保持平整。本实施例中的透明间隔层14为整层结构。在一实施方式中，为了防止损坏发光单元，所述透明间隔层14的材料为弹性材料，比如包括透明硅胶、橡胶、乳胶和塑胶中的一种或多种。其中所述透明间隔层14的材料可包括硅氧烷系材料和亚克力系材料中的至少一种。
盖板20与所述驱动基板10相对设置。所述盖板20的材料可为聚对苯二甲酸乙二醇醋(PET)或聚碳酸醋(PC)等有一定硬度的塑料，也可以是玻璃。
本发明还提供一种上述显示面板的制作方法，该方法具体包括以下步骤：
S101、在驱动基板上制作像素定义层，对所述像素定义层进行图案化处理，以形成多个开口区域；
例如，如图4所示，在驱动基板10上制作像素定义层11，对所述像素定义层11进行图案化处理，以形成多个开口区域102。
S102、在所述开口区域内依次制作第一电极和发光二极管；
例如，如图4所示，在所述开口区域102内依次制作第一电极31和发光二极管32或者32′。
S103、在所述发光二极管上制作第二电极；
例如，如图6所示，在所述发光二极管32或者32′上制作第二电极33。
S104、在部分所述第二电极上制作色彩转换层；
例如，如图6所示，在一实施方式中，在绿色像素132对应的发光二极管32上制作色彩转换层34，此时蓝色像素133对应的发光二极管32上不需要制作色彩转换层，红色像素131对应的发光二极管32′上不需要制作色彩转换层，进而形成基底50。当然，色彩转换层不限于制作在绿色像素对应的发光二极管32上。
S105、在所述色彩转换层、所述第二电极、所述绝缘层以及所述像素定义层上制作透明间隔层；
返回图1，在所述色彩转换层34、所述第二电极33、所述绝缘层12以及所述像素定义层11上制作透明间隔层14。也即此时透明间隔层14制作在所述基底50上。其中基底50包括驱动基板10和主体部40。透明间隔层14的具体结构和材料具体参见上文。
S106、在所述透明间隔层上制作盖板。
返回图1，在一实施方式中，将盖板20贴合在所述透明间隔层14上。
在另一实施方式中，为了避免第一电极和第二电极发生短路，上述方法还可包括：
S107、在位于所述第一电极和所述发光二极管周缘的开口区域内形成绝缘层；
例如，如图5所示，在未被第一电极31和所述发光二极管32或者32′覆盖的开口区域102内、所述发光二极管32或者32′上以及像素定义层11上沉积绝缘材料，形成绝缘层；之后将发光二极管32或者32′和像素定义层11上绝缘层去除，使得绝缘层12仅位于第一电极31和发光二极管32或者32′的周缘。
请参照图2，图2为本发明另一实施例的显示面板的结构示意图。
本实施例的显示面板与上一实施例的区别在于，本实施例的透明间隔层14为图案化的结构，也即所述透明间隔层14设于所述发光单元13上。
其中本实施例的透明间隔层14包括多个间隔部101，所述间隔部101与所述发光单元13的位置对应。在一实施方式中，所述间隔部101包括主间隔部141和子间隔部142，所述主间隔部141与所述主像素131或者133的位置对应；所述子间隔部142与所述次像素132的位置对应；其中所述主间隔部141的高度大于所述子间隔部142的高度。
为了进一步提高显示面板的均匀性，所述主间隔部141的高度与所述子间隔部142的高度之间具有第二差值；所述第二差值等于所述第一差值。
由于在本体部上制作透明间隔层，因此使得驱动基板的上表面更加平整，使得驱动基板和盖板之间的间隙保持一致，也即使显示面板的厚度更加均匀，进而提高了显示效果。
本实施例的显示面板的制作方法与上一实施例的区别在于：在步骤S105和S106之间还包括：
S201、对透明间隔层14进行图案化处理，形成间隔部101。
请参照图3，图3为本发明又一实施例的显示面板的结构示意图。
本实施例的显示面板与上一实施例的区别在于，本实施例的透明间隔层14设于所述盖板20中靠近所述主体部40的一侧。在一实施方式中，透明间隔层14设于所述盖板20的下方。
本发明还提供一种显示面板的制作方法，本实施例的显示面板的制作方法与上一实施例的区别在于第五步和第六步的方法不同，本实施例的第五步和第六步具体如下：
S105’、在盖板的靠近所述主体部的一侧制作透明间隔层；
在一实施方式中，返回图3，在盖板20的下方制作透明间隔层14。对所述透明间隔层14进行图案化处理，形成间隔部101。透明间隔层14的具体结构和材料具体参见上文。
S106’、将所述盖板与基底贴合。
结合图3和图6，在一实施方式中，将盖板20与上述基底50贴合。
由于在盖板下方制作透明间隔层，因此使得整个显示面板的上表面更加平整，也即使得驱动基板和盖板之间的间隙保持一致，也即使显示面板的厚度更加均匀，进而提高了显示效果。
本发明还提供一种电子装置，其包括上述任意一种显示面板100。
本发明的显示面板及其制作方法以及电子装置，包括驱动基板；主体部，其包括像素定义层，设于所述驱动基板上，其包括多个开口区域；多个发光单元，其包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；盖板，与所述驱动基板相对设置；所述主体部与所述盖板之间还设置有透明间隔层，所述透明间隔层用于使所述驱动基板与所述盖板之间的间距保持一致；由于增加透明间隔层，因此使得驱动基板和盖板之间的间隙保持一致，从而使显示面板的厚度更加均匀，进而提高了显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种显示面板，其包括：
    驱动基板；
    主体部，其包括：
    像素定义层，设于所述驱动基板上，所述像素定义层包括多个开口区域；
    多个发光单元，所述发光单元包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；以及
    盖板，与所述驱动基板相对设置；
    所述主体部与所述盖板之间还设置有透明间隔层，所述透明间隔层用于使所述驱动基板与所述盖板之间的间距保持一致。
  2. 根据权利要求1所述的显示面板，其中所述主体部还包括绝缘层，所述绝缘层填充在所述开口区域内，且所述绝缘层环绕在所述像素的周缘。
  3. 根据权利要求1所述的显示面板，其中所述透明间隔层覆盖所述主体部。
  4. 根据权利要求1所述的显示面板，其中所述透明间隔层包括多个间隔部，所述间隔部与所述发光单元的位置对应。
  5. 根据权利要求4所述的显示面板，其中所述像素包括至少一主像素和至少一次像素，所述主像素的高度小于所述次像素的高度；
    所述间隔部包括主间隔部和子间隔部，所述主间隔部与所述主像素的位置对应；所述子间隔部与所述次像素的位置对应；其中所述主间隔部的高度大于所述子间隔部的高度。
  6. 根据权利要求5所述的显示面板，其中所述主像素的高度和所述次像素的高度之间具有第一差值；所述主间隔部的高度与所述子间隔部的高度之间具有第二差值；所述第二差值等于所述第一差值。
  7. 根据权利要求6所述的显示面板，其中所述主像素的截面结构和所述次像素的截面结构均包括第一电极以及依次设于所述第一电极上的发光二极管和第二电极；所述次像素的截面结构还包括色彩转换层，所述色彩转换层设于所述第二电极上。
  8. 根据权利要求4所述的显示面板，其中
    所述透明间隔层设于所述盖板中靠近所述主体部的一侧。
  9. 根据权利要求1所述的显示面板，其中
    所述透明间隔层设于所述主体部上。
  10. 根据权利要求1所述的显示面板，其中
    所述透明间隔层的材料为弹性材料。
  11. 一种电子装置，其包括显示面板，其包括：
    驱动基板；
    主体部，其包括：
    像素定义层，设于所述驱动基板上，所述像素定义层包括多个开口区域；
    多个发光单元，所述发光单元包括多个像素，所述像素设于所述开口区域内；其中所述发光单元中至少两个像素的高度不同；以及
    盖板，与所述驱动基板相对设置；
    所述主体部与所述盖板之间还设置有透明间隔层，所述透明间隔层用于使所述驱动基板与所述盖板之间的间距保持一致。
  12. 根据权利要求11所述的电子装置，其中
    所述主体部还包括绝缘层，所述绝缘层填充在所述开口区域内，
    且所述绝缘层环绕在所述像素的周缘。
  13. 根据权利要求11所述的电子装置，其中
    所述透明间隔层覆盖所述主体部。
  14. 根据权利要求11所述的电子装置，其中
    所述透明间隔层包括多个间隔部，所述间隔部与所述发光单元的 位置对应。
  15. 根据权利要求14所述的电子装置，其中
    所述像素包括至少一主像素和至少一次像素，所述主像素的高度小于所述次像素的高度；
    所述间隔部包括主间隔部和子间隔部，所述主间隔部与所述主像素的位置对应；所述子间隔部与所述次像素的位置对应；其中所述主间隔部的高度大于所述子间隔部的高度。
  16. 根据权利要求15所述的电子装置，其中
    所述主像素的高度和所述次像素的高度之间具有第一差值；所述主间隔部的高度与所述子间隔部的高度之间具有第二差值；所述第二差值等于所述第一差值。
  17. 根据权利要求14所述的电子装置，其中
    所述透明间隔层设于所述盖板中靠近所述主体部的一侧。
  18. 根据权利要求11所述的电子装置，其中
    所述透明间隔层的材料为弹性材料。
  19. 一种显示面板的制作方法，其中包括：
    在驱动基板上制作像素定义层，对所述像素定义层进行图案化处理，以形成多个开口区域；
    在所述开口区域内依次制作第一电极和发光二极管；
    在所述发光二极管上制作第二电极；
    在部分所述第二电极上制作色彩转换层，得到基底；以及
    在所述基底和盖板之间制作透明间隔层。
  20. 根据权利要求19所述的显示面板的制作方法，其中在所述开口区域内依次制作第一电极和发光二极管的步骤之后，以及在所述发光二极管上制作第二电极的步骤之前，其还包括：
    在位于所述第一电极和所述发光二极管周缘的开口区域内形成绝缘层。
PCT/CN2020/081706 2020-02-26 2020-03-27 一种显示面板及其制作方法以及电子装置 WO2021168977A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/756,186 US11557699B2 (en) 2020-02-26 2020-03-27 Display panel, manufacturing method thereof, and electronic device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202010120666.6 2020-02-26
CN202010120666.6A CN111312727A (zh) 2020-02-26 2020-02-26 一种显示面板及其制作方法以及电子装置

Publications (1)

Publication Number Publication Date
WO2021168977A1 true WO2021168977A1 (zh) 2021-09-02

Family

ID=71148111

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/081706 WO2021168977A1 (zh) 2020-02-26 2020-03-27 一种显示面板及其制作方法以及电子装置

Country Status (3)

Country Link
US (1) US11557699B2 (zh)
CN (1) CN111312727A (zh)
WO (1) WO2021168977A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101000922A (zh) * 2006-01-11 2007-07-18 精工爱普生株式会社 发光装置和电子机器
CN101262724A (zh) * 2007-03-07 2008-09-10 精工爱普生株式会社 发光装置及其制造方法以及电子设备
CN103943662A (zh) * 2014-04-21 2014-07-23 上海和辉光电有限公司 全彩有机发光二极管结构及其制作方法
CN105633115A (zh) * 2014-11-27 2016-06-01 昆山国显光电有限公司 Oled器件及其制造方法、显示装置
CN106571431A (zh) * 2015-10-09 2017-04-19 株式会社日本显示器 显示装置
CN109004006A (zh) * 2018-07-27 2018-12-14 京东方科技集团股份有限公司 有机发光显示基板及其制作方法、显示装置
KR20190054354A (ko) * 2017-11-13 2019-05-22 엘지디스플레이 주식회사 플렉서블 디스플레이 장치
US10325894B1 (en) * 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102304400B1 (ko) * 2017-03-20 2021-09-24 제이드 버드 디스플레이(상하이) 리미티드 마이크로 led 층을 적층하여 반도체 장치를 제조
CN107068707A (zh) * 2017-06-13 2017-08-18 深圳市华星光电技术有限公司 Micro LED彩色显示器件
CN109449189B (zh) * 2018-11-13 2022-04-29 京东方科技集团股份有限公司 一种显示基板及其制备方法和显示面板
CN109616500B (zh) * 2018-12-06 2020-10-02 合肥鑫晟光电科技有限公司 有机发光二极管面板及其制备方法、显示装置
US11832469B2 (en) * 2019-06-24 2023-11-28 Boe Technology Group Co., Ltd. Display substrate, method for manufacturing display substrate, and display apparatus

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101000922A (zh) * 2006-01-11 2007-07-18 精工爱普生株式会社 发光装置和电子机器
CN101262724A (zh) * 2007-03-07 2008-09-10 精工爱普生株式会社 发光装置及其制造方法以及电子设备
CN103943662A (zh) * 2014-04-21 2014-07-23 上海和辉光电有限公司 全彩有机发光二极管结构及其制作方法
CN105633115A (zh) * 2014-11-27 2016-06-01 昆山国显光电有限公司 Oled器件及其制造方法、显示装置
CN106571431A (zh) * 2015-10-09 2017-04-19 株式会社日本显示器 显示装置
KR20190054354A (ko) * 2017-11-13 2019-05-22 엘지디스플레이 주식회사 플렉서블 디스플레이 장치
US10325894B1 (en) * 2018-04-17 2019-06-18 Shaoher Pan Integrated multi-color light-emitting pixel arrays based devices by bonding
CN109004006A (zh) * 2018-07-27 2018-12-14 京东方科技集团股份有限公司 有机发光显示基板及其制作方法、显示装置

Also Published As

Publication number Publication date
CN111312727A (zh) 2020-06-19
US20220320382A1 (en) 2022-10-06
US11557699B2 (en) 2023-01-17

Similar Documents

Publication Publication Date Title
JP5601025B2 (ja) 電気光学装置及び電気光学装置の製造方法、並びに電子機器
WO2020191889A1 (zh) Oled显示面板及其制作方法
WO2021238621A1 (zh) 显示面板及其制备方法、显示装置
WO2021196995A1 (zh) 显示装置、显示装置的盖板的制作方法
EP3156841A1 (en) Display base plate, display panel and display device
WO2016165264A1 (zh) 像素单元及其制备方法、阵列基板和显示装置
US11758787B2 (en) Display panel and display device with balanced brightness difference between edge and center of display area
US9559154B2 (en) Display device keeping a distance between a light emitting layer and a counter substrate uniformly
CN110277508B (zh) 有机发光二极管显示面板及其制造方法
JP2008009373A (ja) 液晶表示装置用カラーフィルター基板及びその製造方法
WO2013139192A1 (zh) 触摸液晶显示装置、液晶显示面板及上部基板
TW201814880A (zh) 頂部發光型微發光二極體顯示器與底部發光型微發光二極體顯示器及其形成方法
CN111785760B (zh) 一种显示基板及其制备方法、显示装置
WO2021068337A1 (zh) 显示面板及显示装置
WO2021196362A1 (zh) 低温多晶硅显示面板及其制作方法、液晶显示装置
WO2022017027A1 (zh) 可拉伸显示面板及其制作方法
WO2020147519A1 (zh) 一种显示基板及其制备方法、显示面板
WO2022247180A1 (zh) 显示面板及显示装置
WO2020215562A1 (zh) 一种显示面板及显示装置
WO2020177176A1 (zh) Oled 显示面板
WO2024017343A1 (zh) 显示面板及其制作方法、显示装置
TW201838171A (zh) 頂部發光型微發光二極體顯示器與底部發光型微發光二極體顯示器及其形成方法
WO2021168977A1 (zh) 一种显示面板及其制作方法以及电子装置
US11067845B2 (en) Liquid crystal panel and method of manufacturing same
KR101826363B1 (ko) 유기발광다이오드 표시장치 및 그 제조 방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20922244

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20922244

Country of ref document: EP

Kind code of ref document: A1