WO2022111076A1 - 显示基板及其制造方法和显示装置 - Google Patents

显示基板及其制造方法和显示装置 Download PDF

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Publication number
WO2022111076A1
WO2022111076A1 PCT/CN2021/123068 CN2021123068W WO2022111076A1 WO 2022111076 A1 WO2022111076 A1 WO 2022111076A1 CN 2021123068 W CN2021123068 W CN 2021123068W WO 2022111076 A1 WO2022111076 A1 WO 2022111076A1
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layer
light
light guide
base substrate
substrate
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PCT/CN2021/123068
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English (en)
French (fr)
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孙力
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京东方科技集团股份有限公司
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Priority to US17/800,790 priority Critical patent/US20230105154A1/en
Publication of WO2022111076A1 publication Critical patent/WO2022111076A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display substrate, a manufacturing method thereof, and a display device.
  • OLED display devices have the advantages of thinness, active light emission, wide viewing angle, fast response, low energy consumption, and flexible display. OLED display devices also provide more vivid colors and a larger color gamut than conventional liquid crystal display (LCD) devices.
  • the light-emitting material layer of the organic light-emitting device (OLED) in the organic light-emitting display device is usually made of a metal material with relatively active chemical properties. The metal material is easy to react with water and oxygen, which changes the optoelectronic properties of the material and causes the OLED device to fail.
  • a display substrate comprising:
  • the base substrate includes a display area and an encapsulation area surrounding the display area, the encapsulation area is used for setting a sealant;
  • partition structure disposed on the base substrate, the partition structure being located in the package area, the partition structure having opposing first and second sides, the first side and the second side one of the first side and the second side is near the display area, the other of the first side and the second side is away from the display area, and;
  • the light guide structure disposed on the base substrate, the light guide structure is located in the packaging area and is disposed close to the partition structure,
  • At least one of the light guide structures is located on the first side of the partition structure for guiding light to irradiate on a portion of the side surface of the partition structure located on the first side opposite to the light guide structure;
  • the partition structure has a first inclined side surface, the first inclined side surface is located on the first side, and in a direction from approaching the base substrate to a direction away from the base substrate, the first inclined side faces away from the base substrate
  • the direction of the second side is inclined, and there is a first space between the first inclined side surface and the base substrate.
  • the light guide structure includes: a first light-reflecting layer disposed on the base substrate; a first light-guiding layer disposed on a side of the first light-reflecting layer away from the base substrate layer; and a second light-reflecting layer disposed on the side of the first light-guiding layer away from the base substrate.
  • the light guide structure further includes: a second light guide layer disposed between the first light reflective layer and the first light guide layer; and a second light guide layer disposed between the first light guide layer a third light-guiding layer between the layer and the second light-reflecting layer, wherein the refractive index of the material of the first light-guiding layer is greater than the refractive index of the material of the second light-guiding layer, and the first The refractive index of the material of the light guide layer is greater than the refractive index of the material of the third light guide layer.
  • the light guide structure further includes a light absorption layer, and the light absorption layer is disposed on a side of the second light reflection layer away from the base substrate.
  • each of the light absorption layer, the second light reflection layer and the third light guide layer has an opening, the light absorption layer, the second light reflection layer and the third light guide layer The openings of each of the three light guide layers communicate with each other to expose at least a portion of the first light guide layer.
  • the first light guide layer has a spacer groove, the spacer groove divides the first light guide layer into a first light guide layer and a second light guide layer, and the spacer groove is in the The orthographic projection on the base substrate falls within the orthographic projection of the opening of each of the light-absorbing layer, the second light-reflecting layer, and the third light-guiding layer on the base substrate.
  • the isolation structure includes a top surface remote from the base substrate, the base substrate includes a first surface facing the isolation structure, and the first sloped side surface is located away from the substrate The vertical distance from one end of the substrate to the first surface is less than or equal to the vertical distance from the top surface to the first surface.
  • the partition structure further includes a second inclined side surface, the second inclined side surface is located on the second side and is in a direction from approaching the base substrate to being away from the base substrate , the second inclined side is inclined in a direction away from the first side, and there is a second space between the second inclined side and the base substrate.
  • a vertical distance from an end of the second inclined side surface away from the base substrate to the first surface is less than or equal to a vertical distance from the top surface to the first surface.
  • the first light guide layer includes a top surface away from the base substrate, and a vertical distance from the top surface of the first light guide layer to the first surface is smaller than that of the first light guide layer. The vertical distance from an end of each of the inclined side surface and the second inclined side surface away from the base substrate to the first surface.
  • the display substrate further includes a plurality of pixel units, the plurality of pixel units are disposed in the display area of the base substrate, each of the pixel units includes a pixel driving circuit and a A light-emitting device electrically connected to the pixel driving circuit, the light-emitting device comprising a first electrode, a second electrode and a light-emitting layer disposed between the first electrode and the second electrode, the pixel driving circuit including a light-emitting layer disposed between the first electrode and the second electrode
  • one of the light-shielding layer and the first conductive layer is located at the same layer as the first light-reflecting layer; and/or, the first insulating layer and the second light-guiding layer layer is located on the same layer; and/or, the third insulating layer and the third light guide layer are located on the same layer; and/or, one of the second conductive layer and the third conductive layer is located on the same layer as the third conductive layer
  • the second reflective layer is located on the same layer.
  • the display substrate includes at least two of the partition structures, and at least one of the light guide structures is located between the two partition structures.
  • the display substrate includes at least two of the light guide structures, at least one light guide structure is located on a first side of the partition structure, and at least one light guide structure is located on a second side of the partition structure side.
  • the display substrate further includes a pixel definition layer, the pixel definition layer is located on a side of the first electrode away from the base substrate; and the partition structure and the pixel definition layer on the same floor.
  • the blocking structure includes a positive photoresist material.
  • the display substrate further includes a frame sealing glue, the frame sealing glue is located in the packaging area, and an orthographic projection of the frame sealing glue on the base substrate covers the partition structure and the an orthographic projection of each of the light guide structures on the base substrate.
  • each of the second electrode and the light emitting layer of the light emitting device is disconnected at least at the first inclined side surface.
  • a display device comprising: the above-mentioned display substrate; and a second substrate disposed opposite to the display substrate, wherein a sealing glue is provided in the packaging area, and the sealing frame The glue is in contact with the display substrate and the second substrate, respectively.
  • a manufacturing method of a display substrate includes:
  • the base tomb board includes a display area and an encapsulation area surrounding the display area;
  • a light guide structure is formed on the base substrate, the light guide structure is located in the encapsulation area, the light guide structure has opposite first side and second side, the first side and the second side one of the sides is close to the display area, and the other of the first side and the second side is away from the display area;
  • the isolation structure is formed in the package area through a patterning process
  • forming the isolation structure in the package area through a patterning process includes:
  • Light is irradiated on a part of the positive photoresist material through the opening of the mask, and on the light guide structure;
  • part of the light is emitted from the first side and the second side of the light guide structure, and irradiates the positive photoresist material opposite to the first side and the second side. in part;
  • a developing process is performed on the exposed positive photoresist material, and a partition structure is formed in the package area, so that: the partition structure has opposite first and second sides, and the partition structure has a first inclination a side surface, the first inclined side surface is located on the first side, and in a direction from approaching the base substrate to a direction away from the base substrate, the first inclined side is inclined toward a direction away from the second side , there is a first space between the first inclined side surface and the base substrate, wherein one of the first side and the second side is close to the display area, the first side and the The other of the second sides is remote from the display area.
  • forming the light guide structure on the base substrate includes: forming a first light-reflecting layer on the base substrate; forming a side of the first light-reflecting layer away from the base substrate a first light guide layer; and a second light reflection layer is formed on the side of the first light guide layer away from the base substrate.
  • forming the light guide structure on the base substrate further includes: forming a second light guide layer between the first light reflection layer and the first light guide layer; A third light guide layer is formed between the first light guide layer and the second light reflection layer, wherein the refractive index of the material of the first light guide layer is greater than the refractive index of the material of the second light guide layer, And the refractive index of the material of the first light guide layer is greater than the refractive index of the material of the third light guide layer.
  • forming the light guide structure on the base substrate further includes: forming a light absorption layer on a side of the second light reflection layer away from the base substrate.
  • forming the light guide structure on the base substrate further includes: forming an opening in each of the light absorption layer, the second light reflection layer and the third light guide layer , so that the openings of each of the light-absorbing layer, the second light-reflecting layer, and the third light-guiding layer are communicated with each other to expose at least a part of the first light-guiding layer; and light passes through the opening of the mask plate.
  • the irradiating of the holes onto the light guide structure includes: irradiating light onto the first light guide layer through the openings and the connected openings of the mask plate, so as to introduce light into the first light guide layer.
  • forming the light guide structure on the base substrate further includes: forming a spacing groove in the first light guide layer, so that the spacing groove divides the first light guide layer into A first photoconductive layer and a second photoconductive layer, the first photoconductive layer has a first sidewall facing the second photoconductive layer, and the second photoconductive layer has a first sidewall facing the first photoconductive layer. the second sidewall of the photonic layer; and irradiating light on the light guide structure through the opening of the mask plate includes: the light is irradiated on the first light guide layer through the opening of the mask plate and the connected opening, and the light is irradiated on the first light guide layer. into the first photoconductive layer through the first sidewall and into the second photoconductive layer through the second sidewall.
  • a pixel defining layer is also formed in the display area.
  • the manufacturing method further includes: forming a light-emitting functional layer on a side of the pixel defining layer away from the base substrate by an evaporation process, wherein the light-emitting functional layer is at least on the side of the pixel defining layer.
  • the first inclined side is broken.
  • the manufacturing method further includes: forming a sealant in an encapsulation area of the base substrate, and an orthographic projection of the sealant on the base substrate covers the partition structure and an orthographic projection of each of the light guide structures on the base substrate.
  • FIG. 1 is a plan view of a display panel according to some exemplary embodiments of the present disclosure.
  • FIG. 2 is a cross-sectional view of a display panel taken along line AA' in FIG. 1 according to some exemplary embodiments of the present disclosure
  • FIG. 3 is a partial enlarged view of part I of FIG. 2 , which schematically shows a cross-sectional structure of a display substrate at an encapsulation area according to an embodiment of the present disclosure
  • FIGS. 4A and 4B respectively schematically illustrate cross-sectional views of a partition structure of a display substrate according to an embodiment of the present disclosure
  • 5A and 5B respectively schematically illustrate cross-sectional views of a light guide structure included in a display substrate according to an embodiment of the present disclosure
  • FIG. 6 schematically shows a cross-sectional view of a display substrate in a display area according to an embodiment of the present disclosure
  • FIG. 7 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure.
  • FIG. 13 is a schematic diagram of a display device according to some exemplary embodiments of the present disclosure.
  • the X axis, the Y axis and the Z axis are not limited to the three axes of the rectangular coordinate system, and may be interpreted in a broader sense.
  • the X, Y, and Z axes may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.
  • "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z” may be interpreted as X only, Y only, Z only, or Any combination of two or more of X, Y and Z such as XYZ, XYY, YZ and ZZ.
  • the term "and/or" includes any and all combinations of one or more of the associated listed items.
  • first the terms “first”, “second”, etc. may be used herein to describe various components, components, elements, regions, layers and/or sections, these components, components, elements, regions, layers and/or parts shall not be limited by these terms. Rather, these terms are used to distinguish one element, member, element, region, layer and/or section from another. Thus, for example, a first part, first member, first element, first region, first layer and/or first section discussed below could be termed a second part, second member, second element, second region , the second layer and/or the second portion without departing from the teachings of the present disclosure.
  • spatially relational terms eg, "upper,” “lower,” “left,” “right,” etc. may be used herein to describe one element or feature relative to another element or feature as shown in the figures relation. It should be understood that the spatially relational terms are intended to encompass other different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as “below” or “beneath” other elements or features would then be oriented “above” or “above” the other elements or features.
  • the expression “height” or “thickness” refers to the dimension along the surface of each film layer arranged perpendicular to the display panel, that is, along the light exit direction of the display panel size, or the size along the normal direction of the display device.
  • patterning process includes at least the steps of photoresist coating, exposure, development, and the like.
  • one-shot patterning process means a process of forming patterned layers, features, members, etc. using one mask.
  • the expressions “same layer”, “same layer arrangement” or similar expressions refer to the use of the same film formation process to form a film layer for forming a specific pattern, and then to use the same mask to pass a patterning process to the film.
  • Layer structure formed by layer patterning may include multiple exposure, development or etching processes, and the specific pattern in the formed layer structure may be continuous or discontinuous.
  • These particular graphics may also be at different heights or have different thicknesses. That is, elements or layers on the same layer generally contain the same material and are formed by the same patterning process.
  • the expression “electrically connected” may mean that two parts or elements are directly electrically connected, eg, part or element A is in direct contact with part or element B, and electrical signals may be transmitted between the two; also can mean that two parts or elements are electrically connected through a conductive medium such as a conductive wire, for example, part or element A is electrically connected to part or element B through a conductive wire to transmit electrical signals between the two parts or elements; it can also mean that Two components or elements are electrically connected by at least one electronic component, eg, component or component A is electrically connected with component or component B through at least one thin film transistor to transmit electrical signals between the two components or components.
  • Embodiments of the present disclosure at least provide a display substrate, including: a base substrate, the base substrate includes a display area and an encapsulation area surrounding the display area, the encapsulation area is used for setting a frame sealant;
  • the partition structure on the base substrate, the partition structure is located in the package area, the partition structure has opposite first side and second side, one of the first side and the second side is close to the display area, the other one of the first side and the second side is away from the display area, and; a light guide structure disposed on the base substrate, the light guide structure being located in the package In the area and close to the partition structure, at least one of the light guide structures is located on the first side of the partition structure, and is used to guide light to irradiate to the side surface of the partition structure located on the first side and the light guide structure.
  • the partition structure has a first inclined side surface, the first inclined side surface is located on the first side, and in a direction from approaching the base substrate to away from the base substrate, so The first inclined side is inclined in a direction away from the second side, and there is a first space between the first inclined side and the base substrate.
  • the OLED display panel may include a first substrate 1 and a second substrate 2 arranged oppositely.
  • the first substrate 1 may be an array substrate
  • the second substrate 2 may be a cover plate formed of, for example, glass, organic material, or the like.
  • the OLED display panel may further include a sealant 3 disposed between the first substrate 1 and the second substrate 2, and the sealant 3 is annularly disposed in the peripheral region of the first substrate 1, that is, A ring of sealant 3 is arranged in the peripheral area of the first substrate 1 .
  • the frame sealant 3 can prevent the intrusion of water vapor and oxygen, maintain the cell thickness of the peripheral area of the display panel, and bond the first substrate and the second substrate.
  • the gap between the first substrate and the second substrate may also be filled with a filler, and the filler may be a resin material.
  • the packaging structure of Dam+Filler is realized. It should be noted that the embodiments of the present disclosure are not limited to the packaging structure, and other types of packaging structures may be used in the embodiments of the present disclosure if there is no conflict.
  • the display substrate may include: a substrate tomb board 10 , for example, the base substrate 10 may be formed of materials such as glass, plastic, polyimide, and the like.
  • the base substrate 10 includes a display area AA and a peripheral area (or a non-display area) NA located on at least one side of the display area AA (for convenience of description, the side is referred to as the first side).
  • the peripheral area NA may include the encapsulation area ENA and other peripheral areas.
  • the expression “encapsulation area” refers to the area covered by the sealant 3 .
  • the first substrate 1 may include a plurality of pixel units P (schematically shown in a dotted frame in FIG. 1 ) disposed in the display area AA, and the plurality of pixel units P may be along the first direction X and the first The two directions Y are arranged in an array on the base substrate 10 .
  • Each pixel unit P may further include a plurality of sub-pixels, such as red sub-pixels, green sub-pixels, and blue sub-pixels. In FIG. 1, one sub-pixel SP is schematically shown.
  • pixel units and sub-pixels are schematically shown in rectangular shapes, but this does not constitute a limitation on the shapes of the pixel units and sub-pixels included in the display panel provided by the embodiments of the present disclosure.
  • the first substrate 1 may also include a light-emitting device, such as an OLED device 4.
  • the OLED device 4 includes a first electrode 41, a second electrode 43 disposed opposite to the first electrode 41, and a The light emitting layer 42 between the second electrodes 43 .
  • first electrode 41 and the second electrode 43 is an anode, and the other is a cathode.
  • the first electrode 41 may be a transparent cathode, eg, it may be formed of a transparent conductive material, and the transparent conductive material may include indium tin oxide (ITO), indium zinc oxide (IZO), and the like.
  • the second electrode 43 may be a reflective anode, for example, it may be formed of a metal material, and the metal material may include alloys such as magnesium aluminum alloy (MgAl), lithium aluminum alloy (LiAl), or single metals such as magnesium, aluminum, and lithium.
  • the light emitting layer 42 may be a multilayer structure, for example, it may include a multilayer structure formed by a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and an electron injection layer.
  • the OLED device 4 can be driven by active or passive.
  • the passively driven OLED array substrate is composed of a cathode and an anode, the intersection of the anode and the cathode can emit light, and the driving circuit can be externally mounted by connection methods such as a tape carrier package or a glass carrier chip.
  • the active driving OLED array substrate can be equipped with a pixel driving circuit for each pixel, and the pixel driving circuit can include a thin film transistor with switching function (ie switching transistor), a thin film transistor with driving function (ie driving transistor) and a charge storage capacitor ,
  • the pixel driving circuit may further include other types of thin film transistors with compensation functions. It should be understood that, in the embodiments of the present disclosure, the display panel may be equipped with various types of known pixel driving circuits, which will not be repeated here.
  • the first substrate 1 includes a driving circuit layer 9 , and the above-mentioned pixel driving circuit may be provided in the driving circuit layer 9 .
  • an insulating layer 91 may be provided, and the insulating layer 91 may be a single insulating film layer or a stack composed of a plurality of insulating film layers.
  • the first substrate 1 may further include various signal lines disposed on the base substrate 10, the various signal lines including scan lines, data lines, ELVDD power lines, ELVSS power lines, etc., so as to provide the pixel in each sub-pixel
  • the drive circuit provides various signals such as control signals, data signals, and power supply voltages.
  • scan lines GL and data lines DL are schematically shown.
  • the scan line GL and the data line DL may be electrically connected to the respective subpixels.
  • FIG. 3 is a partial enlarged view of part I of FIG. 2 , which schematically shows a cross-sectional structure of a display substrate at an encapsulation area according to an embodiment of the present disclosure.
  • the first substrate 1 may include a partition structure 5 and a pixel defining layer 44 .
  • the partition structure 5 is located in the encapsulation area ENA, and the orthographic projection of the sealant 3 on the base substrate 10 covers the orthographic projection of the partition structure 5 on the base substrate 10 .
  • the pixel defining layer 44 is located in the display area AA.
  • the pixel defining layer 44 includes a plurality of openings 441 , and the plurality of openings 441 respectively correspond to a plurality of sub-pixels, that is, at least a part of the OLED devices 4 of the plurality of sub-pixels are respectively located in the plurality of openings 441 .
  • partition structures 5 are schematically shown, which does not constitute a limitation on the number of partition structures 5 included in the display substrate provided by the embodiment of the present disclosure.
  • a smaller number (eg, 1) or a larger number (eg, 3, 4, 5 or more) of the partition structures 5 may be provided in the display substrate.
  • the second electrode 43 and the light-emitting functional layer 40 are schematically shown.
  • the light-emitting functional layer 40 may include at least the light-emitting layer 42 , or the light-emitting functional layer 40 may also include the light-emitting layer 42 and the second electrode 41 .
  • each partition structure 5 is in the shape of an inverted trapezoid. Specifically, each partition structure 5 has opposite first side FS and second side SS, one of the first side FS and the second side SS is close to the display area AA, and the other is far away from the display area AA.
  • first side FS is taken as an example to be close to the display area AA for description.
  • second side SS may also be close to the display area AA, and the first side FS may be far away from the display area AA.
  • the partition structure 5 has a first inclined side surface 51, the first inclined side surface 51 is located on the first side FS, and in a direction from approaching the base substrate 10 to a direction away from the base substrate 10 (ie, the direction from bottom to top in FIG. 3), the An inclined side surface 51 is inclined in a direction away from the second side SS, and there is a first space SP1 between the first inclined side surface 51 and the base substrate 10 .
  • the partition structure 5 has a second inclined side surface 52, the second inclined side surface 52 is located on the second side SS, and from the direction close to the base substrate 10 to the direction away from the base substrate 10, the second inclined side surface 52 is away from the first side FS.
  • the direction is inclined, and there is a second space SP2 between the second inclined side surface 52 and the base substrate 10 .
  • both the first inclined side surface 51 and the second inclined side surface 52 are inclined planes, that is, in a section perpendicular to the base substrate 10 , the first inclined side surface 51 and the second inclined side surface 52 are respectively It is the sloping side of the inverted trapezoid.
  • the embodiments of the present disclosure are not limited thereto, and the shapes of the first inclined side surface 51 and the second inclined side surface 52 are not limited to planes, but may be curved surfaces, which will be further described below with reference to the accompanying drawings.
  • the partition structure 5 has an inverted trapezoidal cross-sectional shape, when the light emitting functional layer 40 is formed through an evaporation process, the light emitting functional layer 40 can be broken at each inclined side surface of the partition structure 5 .
  • the light-emitting functional layer 40 is disconnected by two partition structures 5 , thereby including a plurality of parts disconnected from each other, such as the first part 401 , the second part 402 , the third part 403 , the Fourth part 404 and fifth part 405 .
  • the first part 401 and the second part 402 are disconnected at the first inclined side 51 of the partition structure 5 on the right, and the second part 402 and the third part 403 are disconnected at the second inclined side 52 of the partition structure 5 on the right , the third part 403 and the fourth part 404 are disconnected at the first inclined side 51 of the partition structure 5 on the left, and the fourth part 404 and the fifth part 405 are at the second inclined side 52 of the partition structure 5 on the left disconnect.
  • the light-emitting functional layer 40 includes a plurality of disconnected portions, water and oxygen cannot intrude along the light-emitting functional layer 40 into the light-emitting device located in the space surrounded by the sealant 3 , that is, the light-emitting functional layer 40 is not formed such that water and oxygen intrude path. In this way, the packaging reliability of the display substrate can be improved.
  • the inclined side surfaces are formed on both sides of the two partition structures 5 , that is, four inclined side surfaces are formed.
  • Embodiments of the present disclosure are not limited thereto.
  • at least one side surface of the at least one partition structure can be formed with the above-mentioned inclined side surface, so that the light-emitting functional layer 40 is disconnected at least at one place, thereby blocking the intrusion path of water and oxygen.
  • an inclined side surface may be formed, the side surface of the first side or the side surface of the second side of the partition structure 5 on the right side may be formed as the above-mentioned inclined side surface, or the side surface of the first side or the side surface of the partition structure 5 on the left side may be formed as the above-mentioned inclined side surface.
  • the side surface of the second side is formed as the above-described inclined side surface.
  • two inclined side surfaces may be formed, and the side surface of the second side of the partition structure 5 on the right side and the side surface of the first side of the partition structure 5 on the left side may be formed as the above-mentioned inclined side surfaces.
  • the overall section of the partition structure 5 is an inverted trapezoid.
  • the partition structure 5 includes a top surface 5P (ie, the upper surface in FIG. 3 ) away from the base substrate 10 .
  • the substrate 10 includes a first surface 10P (ie, the upper surface in FIG. 3 ) facing the isolation structure 5 .
  • the vertical distance D1 from one end 51E of the first inclined side surface 51 away from the base substrate 10 to the first surface 10P is equal to the vertical distance D3 from the top surface 5P to the first surface 10P.
  • the vertical distance D2 from one end 52E of the second inclined side surface 52 away from the base substrate 10 to the first surface 10P is equal to the vertical distance D3 from the top surface 5P to the first surface 10P.
  • Embodiments of the present disclosure are also not limited thereto.
  • a part of the cross section of the partition structure 5 may present an inverted trapezoid.
  • the partition structure 5 includes a first inclined side surface 51 located on the first side FS and a second inclined side surface 52 located on the second side SS.
  • the partition structure 5 further includes a third inclined side surface 53 located on the first side FS and a fourth inclined side surface 54 located on the second side SS. From approaching the base substrate 10 to the direction away from the base substrate 10 , the third inclined side surface 53 is inclined toward the second side SS, and the third inclined side surface 53 intersects the first inclined side surface 51 .
  • the fourth inclined side surface 54 is inclined toward the direction close to the first side FS in the direction from approaching the base substrate 10 to the direction away from the base substrate 10 , and the fourth inclined side surface 54 intersects the second inclined side surface 52 .
  • the vertical distance D1 from one end 51E of the first inclined side surface 51 away from the base substrate 10 to the first surface 10P is smaller than the vertical distance D3 from the top surface 5P to the first surface 10P.
  • the vertical distance D2 from the end 52E of the second inclined side surface 52 away from the base substrate 10 to the first surface 10P is smaller than the vertical distance D3 from the top surface 5P to the first surface 10P.
  • the lower part of the partition structure 5 forms an inverted trapezoid structure, when the light-emitting functional layer 40 is formed by an evaporation process, the light-emitting functional layer 40 can still be disconnected at each inclined side surface of the partition structure 5 .
  • the angle between the acute angles ⁇ 1 and ⁇ 2 formed by the first inclined side surface 51 and the second inclined side surface 52 and the base substrate 10 may range from 30° to 80°.
  • first inclined side surface 51 and the second inclined side surface 52 may also be curved surfaces or arc surfaces, for example, may include convex surfaces and concave surfaces. As shown in FIG. 4B , the first inclined side surface 51 and the second inclined side surface 52 are concave.
  • the cross-section of the pixel defining layer 44 may be in the shape of a regular trapezoid.
  • the partition structure 5 and the pixel defining layer 44 may contain the same material and be formed by the same patterning process.
  • the display substrate further includes a light guide structure 6 disposed on the base substrate 10 , and the light guide structure 6 is located in the encapsulation area ENA and disposed close to the partition structure 5 .
  • At least one of the light guide structures 6 is located on at least one side of the partition structure 5 , for example, on the first side and/or the second side of the at least one partition structure 5 .
  • one light guide structure 6 is provided, and the light guide structure 6 is located between the two partition structures 5 , that is, the light guide structure 6 is located on the right partition structure 5
  • the second side and the left side of the partition structure 5 are on the first side.
  • the light guide structure 6 is used for guiding light to irradiate on the portion of the side surface of the partition structure 5 opposite to the light guide structure 6 , so as to form an inverted trapezoidal or partially inverted trapezoidal partition structure 5 .
  • the light guide structure 6 may be formed on the base substrate 10 first.
  • the light guide structure 6 may include: a first light-reflecting layer 64 disposed on the base substrate; the first light-reflecting layer 64 is disposed away from the base substrate 10 and a second light-reflecting layer 65 disposed on the side of the first light-guiding layer 61 away from the base substrate 10 .
  • the light guide structure 6 may further include: a second light guide layer 62 disposed between the first light reflection layer 64 and the first light guide layer 61 ; and a second light guide layer 62 disposed between the first light guide layer 64 and the first light guide layer 61 ; The third light guide layer 63 between the light guide layer 61 and the second light reflection layer 65 .
  • the refractive index of the material of the first light guide layer 61 is greater than the refractive index of the material of the second light guide layer 62, and the refractive index of the material of the first light guide layer 61 is greater than that of the third light guide layer 63 index of refraction of the material.
  • the material of the first light guide layer 6 may include a dielectric layer material with high transmittance and refractive index, such as silicon nitride, silicon oxide, acrylic resin, and the like.
  • the light guide structure 6 may further include a light absorption layer 66 , and the light absorption layer 66 is disposed on a side of the second light reflection layer 65 away from the base substrate 10 .
  • each of the light absorption layer 66 , the second light reflection layer 65 and the third light guide layer 63 has an opening VH
  • each of the light absorption layer 66 , the second light reflection layer 65 and the third light guide layer 63 has an opening VH.
  • the openings VH of one are communicated with each other to expose at least a portion of the first light guide layer 61 .
  • each of the light absorption layer 66 and the second light reflection layer 65 has an opening VH, and the openings VH of each of the light absorption layer 66 and the second light reflection layer 65 communicate with each other to expose the first light guide layer At least part of 61.
  • the first light guide layer 61 has a spacer groove 61H, the spacer groove 61H divides the first light guide layer 61 into a first light guide layer 611 and a second light guide layer 612, and the spacer groove 61H is in the base substrate.
  • the orthographic projection on 10 falls within the orthographic projection of the opening VH of each of the light absorbing layer 66 and the second light reflecting layer 65 on the base substrate 10 .
  • the first light guide layer 61 includes a top surface 61P away from the base substrate 10, and the vertical distance from the top surface 61P of the first light guide layer to the first surface 10P is smaller than the first inclined side surface The vertical distance from one end 51E, 52E of each of the second inclined side surfaces 51 and the second inclined side surface 52 away from the base substrate 10 to the first surface 10P.
  • FIG. 6 schematically shows a cross-sectional view of a display substrate in a display area AA according to an embodiment of the present disclosure.
  • the display substrate may include: an active layer 20 disposed on the base substrate 10 , a first insulating layer (eg, a gate insulating layer) disposed on the side of the active layer 20 away from the base substrate 10 ) 30, the gate G1 disposed on the side of the first insulating layer 30 away from the base substrate 10, the second insulating layer (eg, interlayer insulating layer) 60 disposed on the side of the gate G1 away from the base substrate 10,
  • the second insulating layer 60 covers the source electrode S1 and the drain electrode TD1 on the side away from the base substrate 10 , and covers the third insulating layer (eg, a passivation layer) 70 on the source electrode S1 and the drain electrode TD1 .
  • the source electrode S1 and the drain electrode TD1 are respectively connected to the active layer 20 through via holes.
  • the display substrate may further include: a fourth insulating layer (eg, a planarization layer) 80 disposed on the side of the third insulating layer 70 away from the base substrate 10 .
  • the second electrode 43 is electrically connected to the drain electrode TD1 through the via hole 431 formed in the third insulating layer 70 and the fourth insulating layer 80 .
  • the thickness of the fourth insulating layer 80 is greater than the thickness of the third insulating layer 70 .
  • the thickness of the third insulating layer 70 may be (Angstroms)
  • the thickness of the fourth insulating layer 80 may be between (Amy).
  • the third insulating layer 70 and the fourth insulating layer 80 may include inorganic insulating materials, organic insulating materials, or any combination thereof.
  • the organic insulating material may include polyimide, polyamide, acrylic resin, phenol resin, benzocyclobutene, and the like.
  • the display substrate may further include a pixel defining layer 44 disposed on the side of the second electrode 43 away from the base substrate 10 .
  • the pixel defining layer 44 may include openings 441 in each subpixel.
  • the opening 441 exposes a portion of the second electrode 43 .
  • a portion of the light emitting layer 42 is filled in the opening 441 to be in contact with the exposed portion of the second electrode 43 .
  • the first electrode 41 is located on the side of the light emitting layer 42 away from the base substrate 10 .
  • the layer where the gate electrode G1 is located may be referred to as the first conductive layer
  • the layer where the source electrode S1 and the drain electrode TD1 are located may be referred to as the second conductive layer
  • the second conductive layer The layer where the electrode 43 is located may be referred to as the third conductive layer
  • the layer where the first electrode 41 is located may be referred to as the fourth conductive layer.
  • the first conductive layer may be a conductive layer composed of a gate material
  • the second conductive layer may be a conductive layer composed of a source and drain material
  • the third conductive layer may be composed of an anode material
  • the fourth conductive layer may be a conductive layer composed of a cathode material.
  • the gate material may include metal materials, such as Mo, Al, Cu and other metals and alloys thereof.
  • the source and drain materials may include metal materials, such as Mo, Al, Cu and other metals and their alloys.
  • the anode material may include metal conductive materials, such as magnesium, aluminum, lithium and other metals and alloys thereof.
  • the cathode material may include a transparent conductive material, such as indium tin oxide (ITO), indium zinc oxide (IZO), and the like.
  • the display substrate may further include a light shielding layer 21 .
  • the light shielding layer 21 is disposed on the side of the active layer 20 close to the base substrate 10 .
  • the orthographic projection of the light shielding layer 21 on the base substrate 10 covers the orthographic projection of the active layer 20 on the base substrate 10 , so that the influence of external light on the active layer 20 can be avoided.
  • the display substrate may further include a buffer layer 22 disposed between the light shielding layer 21 and the active layer 20 .
  • the film layer of the light guide structure 6 located in the encapsulation area ENA may be located at the same layer as the film layer of the pixel unit located in the display area AA, so that the same patterning process can be used to simultaneously form the film layer located in the display area.
  • the film layer of the pixel unit in AA and the film layer of the light guide structure 6 in the encapsulation area ENA are located at the same layer as the film layer of the pixel unit located in the display area AA, so that the same patterning process can be used to simultaneously form the film layer located in the display area.
  • the film layer of the pixel unit in AA and the film layer of the light guide structure 6 in the encapsulation area ENA that is to say, there is no need to add an additional patterning process to form the light guide structure 6, thereby facilitating the simplification of the manufacturing process of the display substrate.
  • the second insulating layer 60 may be located on the same layer as the first light guide layer 61 .
  • the first light guide layer 61 may include an interlayer insulating layer material, so as to facilitate the formation of the first light guide layer 61 by using a material with a high refractive index.
  • one of the light-shielding layer 21 and the first conductive layer is located on the same layer as the first light-reflecting layer 64 , that is, the first light-reflecting layer 64 includes a light-shielding layer metal or a gate metal material.
  • the first insulating layer 30 and the second light guide layer 62 are located at the same layer, that is, the second light guide layer 62 includes a gate insulating layer material.
  • the third insulating layer 70 and the third light guide layer 63 are located at the same layer, that is, the third light guide layer 63 includes a passivation layer material or a resin material.
  • one of the second conductive layer and the third conductive layer is located on the same layer as the second light-reflecting layer 65 , that is, the second light-reflecting layer 65 includes a source-drain metal material or an anode material.
  • FIG. 7 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure
  • FIGS. 8 to 12 respectively schematically illustrate some process steps of the method for manufacturing a display substrate according to an embodiment of the present disclosure.
  • the manufacturing method of the display substrate may include the following steps.
  • a base substrate 10 is provided, and the base substrate 10 includes a display area NA and an encapsulation area ENA surrounding the display area.
  • step S72 a light guide structure 6 is formed on the base substrate 10, and the light guide structure 6 is located in the encapsulation area ENA.
  • the light guide structure 6 has opposite first side 6S1 and second side 6S2, one of the first side 6S1 and the second side 6S2 is close to the display area AA, and the first side 6S1 and the second side 6S2 are close to the display area AA.
  • the other of the two side surfaces 6S2 is away from the display area AA.
  • step S72 may include: forming a first light-reflecting layer 64 on the base substrate 10 ; forming a second light-guiding layer on the side of the first light-reflecting layer 64 away from the base substrate 10 62; a first light guide layer 61 is formed on the side of the second light guide layer 62 away from the base substrate 10; a third guide layer 61 is formed on the side of the first light guide layer 61 away from the base substrate 10 a light layer 63 ; and a second light reflection layer 65 is formed on the side of the third light guide layer 63 away from the base substrate 10 .
  • the refractive index of the material of the first light guide layer 61 is greater than the refractive index of the material of the second light guide layer 62, and the refractive index of the material of the first light guide layer 61 is greater than that of the third light guide layer
  • the refractive index of the material is 63.
  • step S72 may include: forming a first light-reflecting layer 64 on the base substrate 10 ; and placing the first light-reflecting layer 64 away from the base substrate 10 A first light guide layer 61 is formed on one side; and a second light reflection layer 65 is formed on the side of the first light guide layer 61 away from the base substrate 10 .
  • step S72 may further include: forming a light absorption layer 66 on a side of the second light reflection layer 65 away from the base substrate 10 .
  • first light-reflecting layer 64 , the second light-guiding layer 62 , the first light-guiding layer 61 , the third light-guiding layer 63 , the second light-reflecting layer 65 and the light-absorbing layer 66 of the light guide structure 6 can Some film layers in the area AA are formed by the same patterning process or film-forming process, that is, no additional patterning process is required to form the light guide structure 6, which is beneficial to simplify the manufacturing process of the display substrate.
  • step S72 may further include: forming openings VH in each of the light absorption layer 66 , the second light reflection layer 65 and the third light guide layer 63 , the light absorption layer 66 , the second light reflection layer 65 and the third light guide layer 63 .
  • the openings VH of each of the three light guide layers 63 communicate with each other to expose at least a portion of the first light guide layer 61 .
  • the orthographic projection of the opening VH of each of the light absorbing layer 66 , the second light reflecting layer 65 and the third light guiding layer 63 on the first light guiding layer 61 may be located along the first light guiding layer 61 as shown in FIG. 8 The approximate middle position in the horizontal direction.
  • step S72 may further include: forming an opening VH in each of the light absorbing layer 66 and the second light reflecting layer 65, the openings VH of each of the light absorbing layer 66 and the second light reflecting layer 65 being communicated with each other , to expose at least a part of the first light guide layer 61 .
  • the orthographic projection of the opening VH of each of the light-absorbing layer 66 and the second light-reflecting layer 65 on the first light-guiding layer 61 may be located at approximately the middle position of the first light-guiding layer 61 in the horizontal direction shown in FIG. 8 .
  • Step S72 may further include: forming a spacing groove 61H in the first light guide layer 61, and the spacing groove 61H divides the first light guide layer 61 into a first light guide layer 611 and a second light guide layer 612, so
  • the first photoconducting layer 611 has a first sidewall 611S facing the second photoconducting layer 612
  • the second photoconducting layer 612 has a second sidewall 612S facing the first photoconducting layer 611 .
  • the first side wall 611S and the second side wall 612S are spaced apart from each other by a certain distance.
  • step S73 as shown in FIG. 9, a positive photoresist material 5L is coated on the base substrate 10, and the positive photoresist material 5L covers the display area AA and the encapsulation area ENA . As shown in FIG. 9 , the positive photoresist material 5L covers the light guide structure 6 .
  • step S74 the isolation structure 5 is formed in the encapsulation area ENA through a patterning process.
  • the step S74 may be performed based on the following steps.
  • the partition structure 5 is formed by a patterning process using a mask 7 .
  • light eg, ultraviolet light
  • LR is irradiated onto a part of the positive photoresist material 5L through the opening 7H of the mask plate 7 , and irradiated onto the light guide structure 6 .
  • part of the light is emitted from the first side 6S1 and the second side 6S2 of the light guide structure 6, and irradiates the positive photoresist material 5L and the first side 6S1 and all the on the opposite part of the second side surface 6S2.
  • the light LR is irradiated to the first guide through the openings 7H of the mask and the openings VH of each of the light absorption layer 66 , the second light reflection layer 65 and the third light guide layer 63 . on the light layer 61 to introduce light into the first light guide layer 61 .
  • the refractive index of the material of the first light guide layer 61 is greater than the refractive index of the material of each of the second light guide layer 62 and the third light guide layer 63 , during the propagation of light in the first light guide layer 61 , total reflection can be formed on the interface between the first light guide layer 61 and the second light guide layer 62 and the interface between the first light guide layer 61 and the third light guide layer 63 . Further, for parts of the light without total reflection, they can be reflected back into the first light guide layer 61 by the first light reflection layer 64 and the second light reflection layer 65 , so that the light keeps propagating in the first light guide layer 61 . In this way, in the embodiment shown in FIG.
  • the light propagating in the first light guide layer 61 can be respectively emitted from the first side 6S1 and the second side 6S2 of the light guide structure 6 and irradiated to the positive side respectively.
  • the photoresist material 5L is on the portion opposite to the first side 6S1 and the second side 6S2.
  • the light LR is irradiated onto the first light guide layer 61 through the opening 7H of the mask and the opening VH of each of the light absorbing layer 66 and the second light reflecting layer 65 , to introduce light into the first light guide layer 61 .
  • the spacer grooves 61H are provided, a part of the light can enter the first light guide layer 61 from the side through the first sidewall 611S and the second sidewall 612S.
  • the downward propagating light and the upward propagating light may be reflected back into the first light guiding layer 61 by the first light reflecting layer 64 and the second light reflecting layer 65, respectively, so that the Light remains propagating in the first light guide layer 61 .
  • the light propagating in the first light guide layer 61 can be respectively emitted from the first side 6S1 and the second side 6S2 of the light guide structure 6 and irradiated to the positive side respectively.
  • the photoresist material 5L is on the portion opposite to the first side 6S1 and the second side 6S2.
  • a small part of the light that is neither totally reflected nor reflected by the light-reflecting layer can be absorbed by the light-absorbing layer 66 in the process of exiting upward, so that the positive photoresist material 5L and the The luminous flux of the light received by the portion of the first side 6S1 and the second side 6S2 opposite to the light received by the portion of the positive photoresist material 5L not opposite to the first side 6S1 and the second side 6S2
  • the luminous flux is large, so that the partition structure 5 with an inverted trapezoid or a partial inverted trapezoid can be ensured.
  • a development process is performed on the exposed positive photoresist material 5L, and a partition structure 5 is formed in the encapsulation area ENA.
  • the exposed portion of the positive photoresist material 5L is removed in the development process.
  • the luminous flux of the light received by the portion of the positive photoresist material 5L opposite to the first side 6S1 and the second side 6S2 is higher than that of the positive photoresist material 5L that is not connected to the first side 6S1 and the second side 6S2.
  • the luminous flux of the light received by the portion opposite to the second side 6S2 is large, that is, the exposed width of the portion of the positive photoresist material 5L opposite to the first side 6S1 and the second side 6S2 is greater than that of the exposed portion.
  • the width of the material to be removed from the part opposite to the second side 6S2 is large, and the width of the material to be removed from the part of the positive photoresist material 5L that is not opposite to the first side 6S1 and the second side 6S2 Small. In this way, a partition structure 5 having an inverted trapezoid or a partial inverted trapezoid is formed, as shown in FIG. 12 .
  • each partition structure 5 has opposing first and second sides FS and SS. 3 and 12
  • the partition structure 5 on the right side has a first inclined side surface 51
  • the first inclined side surface 51 is located on the first side FS of the spacer structure 5 and is close to the base substrate 10
  • the first inclined side surface 51 is inclined in the direction away from the second side SS, and there is a first inclined surface between the first inclined side surface 51 and the base substrate 10 .
  • Space SP1 The partition structure 5 on the left side has a second inclined side surface 52
  • the second inclined side surface 52 is located on the second side SS of the spacer structure 5 , and moves from close to the base substrate 10 to away from the base substrate 10 .
  • the second inclined side surface 52 is inclined in a direction away from the first side FS, and there is a second space SP2 between the second inclined side surface 52 and the base substrate 10 .
  • the first inclined side surface 51 of the partition structure 5 located on the right side and the second inclined side surface 52 of the partition structure 5 located on the left side can be formed as shown in FIG. 4A or FIG. 4B , Alternatively, the structure shown in FIG. 3 is formed.
  • a pixel defining layer 44 is also formed in the display area AA. That is, the pixel defining layer 44 and the partition structure 5 are formed through the same patterning process. That is to say, in the embodiment of the present disclosure, by arranging the light guide structure 6, a normal trapezoidal pixel defining layer 44 and an inverted trapezoidal or partially inverted trapezoidal partition structure can be formed in the display area AA through the same patterning process. 5.
  • the light-emitting functional layer 40 may be formed on the side of the pixel defining layer 44 away from the base substrate 10 by an evaporation process.
  • the light-emitting functional layer 40 may at least include the light-emitting layer 42, or,
  • the light-emitting functional layer 40 may also include a light-emitting layer 42 and a second electrode 41 . Since some side surfaces of the partition structure 5 are inclined surfaces that are wide at the top and narrow at the bottom, such as the above-mentioned first inclined surface 51 and second inclined surface 52, the light-emitting functional layer 40 is disconnected at least at these inclined sides, as shown in FIG. 12 . Show.
  • step S76 a sealant 3 is formed in the encapsulation area ENA of the base substrate 10 , and the orthographic projection of the sealant 3 on the base substrate 10 covers the partition structure 5 and the guide Orthographic projection of each of the optical structures 6 on the base substrate 10 .
  • steps in the above manufacturing method may be performed individually or in combination, and may be performed in parallel or sequentially, and are not limited to the specific operation sequence shown in FIG. 7 .
  • FIG. 13 is a schematic diagram of a display device according to some exemplary embodiments of the present disclosure.
  • the display device 100 includes the above-mentioned display panel. For example, it includes a display area AA and a peripheral area NA, and the structure of the film layers in the display area AA and the peripheral area NA can be referred to the descriptions of the above embodiments, which will not be repeated here.
  • the display device may include any device or product having a display function.
  • the display device may be a smartphone, mobile phone, e-book reader, desktop computer (PC), laptop PC, netbook PC, personal digital assistant (PDA), portable multimedia player (PMP), digital audio Players, mobile medical devices, cameras, wearable devices (such as head-mounted devices, electronic clothing, electronic wristbands, electronic necklaces, electronic accessories, electronic tattoos, or smart watches), TV sets, etc.
  • the display device has all the features and advantages of the above-mentioned display substrate and display panel, and details can be referred to the above description.

Abstract

提供一种显示基板及其制造方法和显示装置。显示基板包括：衬底基板，包括显示区域和封装区域，封装区域用于设置封框胶；设置在衬底基板上的隔断结构，隔断结构位于封装区域中，隔断结构具有相对的第一侧和第二侧，以及设置在衬底基板上的导光结构，导光结构位于封装区域中且靠近隔断结构设置。至少一个导光结构位于隔断结构的第一侧，用于引导光照射至隔断结构位于第一侧的侧面与导光结构相对的部分上；隔断结构具有第一倾斜侧面，第一倾斜侧面位于第一侧，且从靠近衬底基板向远离衬底基板的方向上，第一倾斜侧朝向远离第二侧的方向倾斜，第一倾斜侧面与衬底基板之间具有第一空间。

Description

显示基板及其制造方法和显示装置
相关申请的交叉引用
本申请要求于2020年11月30日递交中国专利局的、申请号为202011374352.5以及发明名称为“显示基板及其制造方法、显示装置”的中国专利申请的权益，该申请的全部公开内容以引用方式并入本文。
技术领域
本公开涉及显示技术领域，并且具体地涉及一种显示基板及其制造方法和显示装置。
背景技术
有机发光二极管(OLED)显示装置具有轻薄、主动发光、宽视角、快速响应、能耗低以及可实现柔性显示等优点。与传统的液晶显示器(LCD)装置相比，OLED显示装置还提供更鲜艳的颜色和更大的色域。有机发光显示装置中的有机发光器件(OLED)的发光材料层通常采用化学性质较为活泼的金属材质，上述金属材质容易与水氧发生反应，使得材料的光电特性改变，导致OLED器件失效。
在本部分中公开的以上信息仅用于对本公开的技术构思的背景的理解，因此，以上信息可包含不构成现有技术的信息。
发明内容
在一个方面，提供一种显示基板，所述显示基板包括：
衬底基板，所述衬底基板包括显示区域和包围所述显示区域的封装区域，所述封装区域用于设置封框胶；
设置在所述衬底基板上的隔断结构，所述隔断结构位于所述封装区域中，所述隔断结构具有相对的第一侧和第二侧，所述第一侧和所述第二侧中的一个靠近所述显示区域，所述第一侧和所述第二侧中的另一个远离所述显示区域，以及；
设置在所述衬底基板上的导光结构，所述导光结构位于所述封装区域中且靠近所述隔断结构设置，
其中，至少一个所述导光结构位于所述隔断结构的第一侧，用于引导光照射至所述隔断结构位于第一侧的侧面与所述导光结构相对的部分上；以及
所述隔断结构具有第一倾斜侧面，所述第一倾斜侧面位于所述第一侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第一倾斜侧朝向远离所述第二侧的方向倾斜，所述第一倾斜侧面与所述衬底基板之间具有第一空间。
根据一些示例性的实施例，所述导光结构包括：设置在所述衬底基板上的第一反光层；设置在所述第一反光层远离所述衬底基板一侧的第一导光层；和设置在所述第一导光层远离所述衬底基板一侧的第二反光层。
根据一些示例性的实施例，所述导光结构还包括：设置在所述第一反光层与所述第一导光层之间的第二导光层；和设置在所述第一导光层与所述第二反光层之间的第三导光层，其中，所述第一导光层的材料的折射率大于所述第二导光层的材料的折射率，以及所述第一导光层的材料的折射率大于所述第三导光层的材料的折射率。
根据一些示例性的实施例，所述导光结构还包括吸光层，所述吸光层设置在所述第二反光层远离所述衬底基板的一侧。
根据一些示例性的实施例，所述吸光层、所述第二反光层和所述第三导光层中的每一个都具有开口，所述吸光层、所述第二反光层和所述第三导光层中的每一个的开口彼此连通，以暴露所述第一导光层的至少一部分。
根据一些示例性的实施例，所述第一导光层具有间隔槽，所述间隔槽将所述第一导光层划分为第一导光子层和第二导光子层，所述间隔槽在所述衬底基板上的正投影落入所述吸光层、所述第二反光层和所述第三导光层中的每一个的开口在所述衬底基板上的正投影内。
根据一些示例性的实施例，所述隔断结构包括远离所述衬底基板的顶面，所述衬底基板包括面向所述隔离结构的第一表面，所述第一倾斜侧面远离所述衬底基板的一端到所述第一表面的垂直距离小于或等于所述顶面到所述第一表面的垂直距离。
根据一些示例性的实施例，所述隔断结构还包括第二倾斜侧面，所述第二倾斜侧面位于所述第二侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第二 倾斜侧朝向远离所述第一侧的方向倾斜，所述第二倾斜侧面与所述衬底基板之间具有第二空间。
根据一些示例性的实施例，所述第二倾斜侧面远离所述衬底基板的一端到所述第一表面的垂直距离小于或等于所述顶面到所述第一表面的垂直距离。
根据一些示例性的实施例，所述第一导光层包括远离所述衬底基板的顶面，所述第一导光层的顶面到所述第一表面的垂直距离小于所述第一倾斜侧面和所述第二倾斜侧面中的每一个远离所述衬底基板的一端到所述第一表面的垂直距离。
根据一些示例性的实施例，所述显示基板还包括多个像素单元，所述多个像素单元设置在所述衬底基板的显示区域中，每一个所述像素单元包括像素驱动电路和与所述像素驱动电路电连接的发光器件，所述发光器件包括第一电极、第二电极以及设置在所述第一电极与所述第二电极之间的发光层，所述像素驱动电路包括设置在所述衬底基板上的至少一个薄膜晶体管，所述薄膜晶体管包括有源层、栅极、源极和漏极；其中，所述显示基板还包括：设置于所述有源层靠近所述衬底基板一侧的遮光层；设置于所述有源层远离所述衬底基板一侧的第一导电层，所述栅极位于所述第一导电层；设置于所述第一导电层远离所述衬底基板一侧的第二导电层，所述源极和漏极位于所述第二导电层；设置于所述第二导电层远离所述衬底基板一侧的第三导电层，所述第二电极位于所述第三导电层；设置在所述有源层与所述第一导电层之间的第一绝缘层；设置在所述第一导电层与所述第二导电层之间的第二绝缘层；设置在所述第二导电层与所述第三导电层之间的第三绝缘层；以及其中，所述第二绝缘层与所述第一导光层位于同一层。
根据一些示例性的实施例，所述遮光层和所述第一导电层中的一个与所述第一反光层位于同一层；和/或，所述第一绝缘层与所述第二导光层位于同一层；和/或，所述第三绝缘层与所述第三导光层位于同一层；和/或，所述第二导电层和所述第三导电层中的一个与所述第二反光层位于同一层。
根据一些示例性的实施例，所述显示基板包括至少两个所述隔断结构，至少一个所述导光结构位于两个隔断结构之间。
根据一些示例性的实施例，所述显示基板包括至少两个所述导光结构，至少一个导光结构位于所述隔断结构的第一侧，至少一个导光结构位于所述隔断结构的第二侧。
根据一些示例性的实施例，所述显示基板还包括像素界定层，所述像素界定层位于所述第一电极远离所述衬底基板的一侧；以及所述隔断结构和所述像素界定层位于同一层。
根据一些示例性的实施例，所述隔断结构包含正性光刻胶材料。
根据一些示例性的实施例，所述显示基板还包括封框胶，所述封框胶位于所述封装区域，所述封框胶在所述衬底基板上的正投影覆盖所述隔断结构和所述导光结构中每一个在所述衬底基板上的正投影。
根据一些示例性的实施例，所述发光器件的第二电极和发光层中的每一个至少在所述第一倾斜侧面处断开。
在另一方面，提供一种显示装置，包括：如上所述的显示基板；和与所述显示基板相对设置的第二基板，其中，所述封装区域中设置有封框胶，所述封框胶分别与所述显示基板和所述第二基板接触。
在又一方面，提供一种显示基板的制造方法，其中，所述制造方法包括：
提供衬底基板，所述衬底墓板包括显示区域和包围所述显示区域的封装区域；
在所述衬底基板上形成导光结构，所述导光结构位于所述封装区域中，所述导光结构具有相对的第一侧面和第二侧面，所述第一侧面和所述第二侧面中的一个靠近所述显示区域，所述第一侧面和所述第二侧面中的另一个远离所述显示区域；
在所述衬底基板上涂覆正性光刻胶材料，所述正性光刻胶材料覆盖所述显示区域和所述封装区域；以及
通过构图工艺在所述封装区域中形成隔断结构，
其中，通过构图工艺在所述封装区域中形成隔断结构包括：
光经过掩模板的开孔照射到所述正性光刻胶材料的一部分上，并且照射到所述导光结构上；
在导光结构的引导下，部分光从所述导光结构的第一侧面和第二侧面射出，照射至所述正性光刻胶材料与所述第一侧面和所述第二侧面相对的部分上；以及
对经曝光的所述正性光刻胶材料执行显影工艺，在所述封装区域形成隔断结构，使得：所述隔断结构具有相对的第一侧和第二侧，所述隔断结构具有第一倾斜侧面，所述第一倾斜侧面位于所述第一侧，且从靠近所述衬底基板向远离所述衬底基板的方 向上，所述第一倾斜侧朝向远离所述第二侧的方向倾斜，所述第一倾斜侧面与所述衬底基板之间具有第一空间，其中，所述第一侧和所述第二侧中的一个靠近所述显示区域，所述第一侧和所述第二侧中的另一个远离所述显示区域。
根据一些示例性的实施例，在所述衬底基板上形成导光结构包括：在所述衬底基板上形成第一反光层；在所述第一反光层远离所述衬底基板一侧形成第一导光层；和在所述第一导光层远离所述衬底基板一侧形成第二反光层。
根据一些示例性的实施例，在所述衬底基板上形成导光结构还包括：在所述第一反光层与所述第一导光层之间形成第二导光层；和设置在所述第一导光层与所述第二反光层之间形成第三导光层，其中，所述第一导光层的材料的折射率大于所述第二导光层的材料的折射率，以及所述第一导光层的材料的折射率大于所述第三导光层的材料的折射率。
根据一些示例性的实施例，在所述衬底基板上形成导光结构还包括：在所述第二反光层远离所述衬底基板的一侧形成吸光层。
根据一些示例性的实施例，在所述衬底基板上形成导光结构还包括：在所述吸光层、所述第二反光层和所述第三导光层中的每一个中都形成开口，使得所述吸光层、所述第二反光层和所述第三导光层中的每一个的开口彼此连通，以暴露所述第一导光层的至少一部分；以及光经过掩模板的开孔照射到所述导光结构上包括：光经过掩模板的开孔以及连通的开口照射到所述第一导光层上，以将光引入所述第一导光层中。
根据一些示例性的实施例，在所述衬底基板上形成导光结构还包括：在所述第一导光层中形成间隔槽，使得所述间隔槽将所述第一导光层划分为第一导光子层和第二导光子层，所述第一导光子层具有面对所述第二导光子层的第一侧壁，所述第二导光子层具有面对所述第一导光子层的第二侧壁；以及光经过掩模板的开孔照射到所述导光结构上包括：光经过掩模板的开孔以及连通的开口照射到所述第一导光层上，并且光通过所述第一侧壁进入所述第一导光子层中以及通过所述第二侧壁进入所述第二导光子层中。
根据一些示例性的实施例，在所述构图工艺中，还在所述显示区域中形成像素界定层。
根据一些示例性的实施例，所述制造方法还包括：通过蒸镀工艺在所述像素界定 层远离所述衬底基板的一侧形成发光功能层，其中，所述发光功能层至少在所述第一倾斜侧面处断开。
根据一些示例性的实施例，所述制造方法还包括：在所述衬底基板的封装区域中形成封框胶，所述封框胶在所述衬底基板上的正投影覆盖所述隔断结构和所述导光结构中每一个在所述衬底基板上的正投影。
附图说明
通过参照附图详细描述本公开的示例性实施例，本公开的特征及优点将变得更加明显。
图1是根据本公开的一些示例性实施例的显示面板的平面图；
图2是根据本公开的一些示例性实施例的显示面板沿图1中的线AA’截取的截面图；
图3是图2的部分I的局部放大图，其示意性示出了根据本公开实施例的显示基板在封装区域处的截面结构；
图4A和图4B分别示意性示出了根据本公开实施例的显示基板的隔断结构的截面图；
图5A和图5B分别示意性示出了根据本公开实施例的显示基板包括的导光结构的截面图；
图6示意性示出了根据本公开实施例的显示基板在显示区域中的截面图；
图7是根据本公开实施例的显示基板的制造方法的流程图；
图8至图12分别示意性示出了根据本公开实施例的显示基板的制造方法的一些工艺步骤；以及
图13是根据本公开的一些示例性实施例的显示装置的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部 分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开的保护范围。
需要说明的是，在附图中，为了清楚和/或描述的目的，可以放大元件的尺寸和相对尺寸。如此，各个元件的尺寸和相对尺寸不必限于图中所示的尺寸和相对尺寸。在说明书和附图中，相同或相似的附图标号指示相同或相似的部件。
当元件被描述为“在”另一元件“上”、“连接到”另一元件或“结合到”另一元件时，所述元件可以直接在所述另一元件上、直接连接到所述另一元件或直接结合到所述另一元件，或者可以存在中间元件。然而，当元件被描述为“直接在”另一元件“上”、“直接连接到”另一元件或“直接结合到”另一元件时，不存在中间元件。用于描述元件之间的关系的其他术语和/或表述应当以类似的方式解释，例如，“在......之间”对“直接在......之间”、“相邻”对“直接相邻”或“在......上”对“直接在......上”等。此外，术语“连接”可指的是物理连接、电连接、通信连接和/或流体连接。此外，X轴、Y轴和Z轴不限于直角坐标系的三个轴，并且可以以更广泛的含义解释。例如，X轴、Y轴和Z轴可彼此垂直，或者可代表彼此不垂直的不同方向。出于本公开的目的，“X、Y和Z中的至少一个”和“从由X、Y和Z构成的组中选择的至少一个”可以被解释为仅X、仅Y、仅Z、或者诸如XYZ、XYY、YZ和ZZ的X、Y和Z中的两个或更多个的任何组合。如文中所使用的，术语“和/或”包括所列相关项中的一个或多个的任何组合和所有组合。
需要说明的是，虽然术语“第一”、“第二”等可以在此用于描述各种部件、构件、元件、区域、层和/或部分，但是这些部件、构件、元件、区域、层和/或部分不应受到这些术语限制。而是，这些术语用于将一个部件、构件、元件、区域、层和/或部分与另一个相区分。因而，例如，下面讨论的第一部件、第一构件、第一元件、第一区域、第一层和/或第一部分可以被称为第二部件、第二构件、第二元件、第二区域、第二层和/或第二部分，而不背离本公开的教导。
为了便于描述，空间关系术语，例如，“上”、“下”、“左”、“右”等可以在此被使用，来描述一个元件或特征与另一元件或特征如图中所示的关系。应理解，空间关系术语意在涵盖除了图中描述的取向外，装置在使用或操作中的其它不同取向。例如，如果图中的装置被颠倒，则被描述为“在”其它元件或特征“之下”或“下面”的元件将取向为“在”其它元件或特征“之上”或“上面”。
本领域技术人员应该理解，在本文中，除非另有说明，表述“高度”或“厚度”指的是沿垂直于显示面板设置的各个膜层的表面的尺寸，即沿显示面板的出光方向的尺寸，或称为沿显示装置的法线方向的尺寸。
在本文中，除非另有说明，表述“构图工艺”至少包括光刻胶的涂布、曝光、显影等步骤。表述“一次构图工艺”意指使用一块掩模板形成图案化的层、部件、构件等的工艺。
需要说明的是，表述“同一层”，“同层设置”或类似表述，指的是采用同一成膜工艺形成用于形成特定图形的膜层，然后利用同一掩模板通过一次构图工艺对该膜层图案化所形成的层结构。根据特定图形的不同，一次构图工艺可能包括多次曝光、显影或刻蚀工艺，而形成的层结构中的特定图形可以是连续的也可以是不连续的。这些特定图形还可能处于不同的高度或者具有不同的厚度。也就是说，位于同一层的元件或膜层通常包含相同的材料且通过同一构图工艺形成。
在本文中，除非另有说明，表述“电连接”可以表示两个部件或元件直接电连接，例如，部件或元件A与部件或元件B直接接触，并且二者之间可以传递电信号；也可以表示两个部件或元件通过例如导电线的导电媒介电连接，例如，部件或元件A通过导电线与部件或元件B电连接，以在两个部件或元件之间传递电信号；还可以表示两个部件或元件通过至少一个电子元器件电连接，例如，部件或元件A通过至少一个薄膜晶体管与部件或元件B电连接，以在两个部件或元件之间传递电信号。
本公开的实施例至少提供一种显示基板，包括：衬底基板，所述衬底基板包括显示区域和包围所述显示区域的封装区域，所述封装区域用于设置封框胶；设置在所述衬底基板上的隔断结构，所述隔断结构位于所述封装区域中，所述隔断结构具有相对的第一侧和第二侧，所述第一侧和所述第二侧中的一个靠近所述显示区域，所述第一侧和所述第二侧中的另一个远离所述显示区域，以及；设置在所述衬底基板上的导光结构，所述导光结构位于所述封装区域中且靠近所述隔断结构设置，其中，至少一个所述导光结构位于所述隔断结构的第一侧，用于引导光照射至所述隔断结构位于第一侧的侧面与所述导光结构相对的部分上；以及所述隔断结构具有第一倾斜侧面，所述第一倾斜侧面位于所述第一侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第一倾斜侧朝向远离所述第二侧的方向倾斜，所述第一倾斜侧面与所述衬底基板 之间具有第一空间。通过这样的结构，可以提高显示基板的封装信赖性。
图1是根据本公开的一些示例性实施例的显示面板的平面图，图2是根据本公开的一些示例性实施例的显示面板沿图1中的线AA’截取的截面图。结合参照图1和图2，所述OLED显示面板可以包括相对设置的第一基板1和第二基板2。例如，第一基板1可以是阵列基板，第二基板2可以是由诸如玻璃、有机材料等形成的盖板。
例如，所述OLED显示面板还可以包括设置在第一基板1和第二基板2之间的封框胶3，封框胶3成环状地设置在第一基板1的周边区域中，即，在第一基板1的周边区域中布置有一圈封框胶3。这样，封框胶3可以起到防止水汽和氧气侵入，维持显示面板周边区域的盒厚，以及粘结第一基板与第二基板的作用。例如，在第一基板和第二基板之间的间隙中，还可以填充有填充胶，填充胶可以采用树脂类材料。通过设置填充胶和封框胶3，实现了Dam+Filler的封装结构。需要说明的是，本公开的实施例不局限于该封装结构，在不冲突的情况下，其他类型的封装结构均可以用于本公开的实施例中。
参照图1，显示基板(例如第一墓板1)可以包括：衬底墓板10，例如，所述衬底基板10可以由玻璃、塑料、聚酰亚胺等材料形成。该衬底基板10包括显示区域AA和位于显示区域AA的至少一侧(为了方便描述，将该侧称为第一侧)的周边区域(或称为非显示区域)NA。周边区域NA可以包括封装区域ENA和其他周边区域。
需要说明的是，除非另有特别说明，在本文中，表述“封装区域”表示被封框胶3覆盖的区域。
继续参照图1，第一基板1可以包括设置在显示区域AA中的多个像素单元P(在图1中以虚线框示意性示出)，多个像素单元P可以沿第一方向X和第二方向Y成阵列地排布在衬底基板10上。每一个像素单元P可以进一步包括多个子像素，例如红色子像素、绿色子像素、蓝色子像素。在图1中，示意性地示出了一个子像素SP。
需要说明的是，在附图中，以矩形形状示意性示出像素单元和子像素，但是，这并不构成对本公开的实施例提供的显示面板包括的像素单元和子像素的形状的限制。
第一基板1还可以包括发光器件，例如OLED器件4，如图2所示，OLED器件4包括第一电极41、与第一电极41相对设置的第二电极43以及设置在第一电极41与第二电极43之间的发光层42。
第一电极41和第二电极43中的一个为阳极，另一个为阴极。例如，第一电极41可以是透明阴极，例如它可由透明导电材料形成，所述透明导电材料可以包括氧化铟锡(ITO)、氧化铟锌(IZO)等。第二电极43可以是反射阳极，例如它可由金属材料形成，所述金属材料可以包括镁铝合金(MgAl)、锂铝合金(LiAl)等合金或者镁、铝、锂等单金属。发光层42可以为多层结构，例如它可以包括空穴注入层、空穴传输层、有机发光层、电子传输层和电子注入层形成的多层结构。
需要说明的是，OLED器件4可以采用有源驱动或无源驱动。无源驱动OLED阵列基板由阴极和阳极构成，阳极和阴极的交叉部分可以发光，驱动电路可由带载封装或玻璃载芯片等连接方式进行外装。有源驱动OLED阵列基板对每个像素可配备像素驱动电路，该像素驱动电路可以包括具有开关功能的薄膜晶体管(即开关晶体管)、具有驱动功能的薄膜晶体管(即驱动晶体管)和一个电荷存储电容，另外，所述像素驱动电路还可以包括具有补偿功能的其他类型的薄膜晶体管。应该理解，在本公开的实施例中，所述显示面板可以配备已知的各种类型的像素驱动电路，在此不再赘述。
例如，如图2所示，第一基板1包括驱动电路层9，上述像素驱动电路可以设置在该驱动电路层9中。在驱动电路层9与OLED器件4之间，可以设置绝缘层91，该绝缘层91可以是单个绝缘膜层或者多个绝缘膜层组成的叠层。
第一基板1还可以包括设置在衬底基板10上的各种信号线，所述各种信号线包括扫描线、数据线、ELVDD电源线和ELVSS电源线等，以便为每个子像素中的像素驱动电路提供控制信号、数据信号、电源电压等各种信号。在图1示出的实施例中，示意性示出了扫描线GL和数据线DL。扫描线GL和数据线DL可以电连接到各个子像素。
图3是图2的部分I的局部放大图，其示意性示出了根据本公开实施例的显示基板在封装区域处的截面结构。结合参照图1至图3，第一基板1可以包括隔断结构5和像素界定层44。隔断结构5位于封装区域ENA中，封框胶3在衬底基板10上的正投影覆盖隔断结构5在衬底基板10上的正投影。像素界定层44位于显示区域AA中。例如，像素界定层44包括多个开口441，多个开口441分别对应多个子像素，即，多个子像素的OLED器件4的至少一部分分别位于多个开口441中。
需要说明的是，在图3中，示意性示出了2个隔断结构5，这不构成对本公开实 施例提供的显示基板中包括的隔断结构5的数量的限制，在其他实施例中，所述显示基板中可以设置更少数量(例如1个)或更多数量(例如3个、4个、5个或更多个)的隔断结构5。
在图3示出的实施例中，示意性示出了第二电极43和发光功能层40。例如，所述发光功能层40可以至少包括发光层42，或者，所述发光功能层40也可以包括发光层42和第二电极41。
继续参照图3，每一个隔断结构5的截面呈倒梯形的形状。具体地，每一个隔断结构5具有相对的第一侧FS和第二侧SS，第一侧FS和第二侧SS中的一个靠近显示区域AA，另一个远离显示区域AA。图3中以第一侧FS靠近显示区域AA为例进行说明。当然，也可以第二侧SS靠近显示区域AA，第一侧FS远离显示区域AA。隔断结构5具有第一倾斜侧面51，第一倾斜侧面51位于第一侧FS，且从靠近衬底基板10向远离衬底基板10的方向(即图3中从下至上的方向)上，第一倾斜侧面51向远离第二侧SS的方向倾斜，第一倾斜侧面51与衬底基板10之间具有第一空间SP1。隔断结构5具有第二倾斜侧面52，第二倾斜侧面52位于第二侧SS，且从靠近衬底基板10向远离衬底基板10的方向上，第二倾斜侧面52向远离第一侧FS的方向倾斜，第二倾斜侧面52与衬底基板10之间具有第二空间SP2。
例如，如图3所示，第一倾斜侧面51和第二倾斜侧面52均为倾斜的平面，即，在垂直于衬底基板10的截面中，第一倾斜侧面51和第二倾斜侧面52分别为倒梯形的倾斜侧边。但是，本公开的实施例不局限于此，第一倾斜侧面51和第二倾斜侧面52的形状不局限于平面，可以为曲面，将在下文中结合附图进一步描述。
由于隔断结构5具有倒梯形的截面形状，所以，在通过蒸镀工艺形成所述发光功能层40时，发光功能层40可以在隔断结构5的各个倾斜侧面处断开。如图3所示，发光功能层40被2个隔断结构5断开，从而包括彼此断开的多个部分，例如图3中所示的第一部分401、第二部分402、第三部分403、第四部分404和第五部分405。第一部分401和第二部分402在右侧的隔断结构5的第一倾斜侧面51处断开，第二部分402和第三部分403在右侧的隔断结构5的第二倾斜侧面52处断开，第三部分403和第四部分404在左侧的隔断结构5的第一倾斜侧面51处断开，第四部分404和第五部分405在左侧的隔断结构5的第二倾斜侧面52处断开。由于发光功能层40包括多个 断开的部分，所以水氧不能沿着发光功能层40侵入位于封框胶3包围的空间内的发光器件，即，发光功能层40不会形成为水氧侵入路径。这样，可以提高显示基板的封装信赖性。
在图3所示的实施例中，在2个隔断结构5的2个侧面处均形成有所述倾斜侧面，即，形成有4个倾斜侧面。本公开的实施例并不局限于此。在其他实施例中，可以使至少一个隔断结构的至少一个侧面形成上述倾斜侧面，使得发光功能层40至少在一处断开，从而阻断水氧侵入路径。例如，可以形成一个倾斜侧面，可以使右侧的隔断结构5的第一侧的侧面或第二侧的侧面形成为上述倾斜侧面，或者可以使左侧的隔断结构5的第一侧的侧面或第二侧的侧面形成为上述倾斜侧面。例如，可以形成两个倾斜侧面，可以使右侧的隔断结构5的第二侧的侧面和左侧的隔断结构5的第一侧的侧面形成为上述倾斜侧面。
在图3所示的实施例中，隔断结构5的截面整体呈现为倒梯形，换句话说，隔断结构5包括远离衬底基板10的顶面5P(即图3中的上表面)，衬底基板10包括面向隔离结构5的第一表面10P(即图3中的上表面)。第一倾斜侧面51远离所述衬底基板10的一端51E到所述第一表面10P的垂直距离D1等于所述顶面5P到所述第一表面10P的垂直距离D3。第二倾斜侧面52远离所述衬底基板10的一端52E到所述第一表面10P的垂直距离D2等于所述顶面5P到所述第一表面10P的垂直距离D3。本公开的实施例也不局限于此。在其他实施例中，可以是隔断结构5的截面的一部分呈现为倒梯形。
图4A和图4B分别示意性示出了根据本公开实施例的显示基板的隔断结构的截面图。如图4A所示，隔断结构5包括位于第一侧FS的第一倾斜侧面51和位于第二侧SS的第二倾斜侧面52。除此之外，隔断结构5还包括位于第一侧FS的第三倾斜侧面53和位于第二侧SS的第四倾斜侧面54。从靠近衬底基板10向远离衬底基板10的方向上，第三倾斜侧面53向靠近第二侧SS的方向倾斜，第三倾斜侧面53与第一倾斜侧面51相交。从靠近衬底基板10向远离衬底基板10的方向上，第四倾斜侧面54向靠近第一侧FS的方向倾斜，第四倾斜侧面54与第二倾斜侧面52相交。第一倾斜侧面51远离所述衬底基板10的一端51E到所述第一表面10P的垂直距离D1小于所述顶面5P到所述第一表面10P的垂直距离D3。第二倾斜侧面52远离所述衬底基板10的一 端52E到所述第一表面10P的垂直距离D2小于所述顶面5P到所述第一表面10P的垂直距离D3。在该实施例中，由于隔断结构5的下部分形成倒梯形结构，所以在通过蒸镀工艺形成所述发光功能层40时，发光功能层40仍可以在隔断结构5的各个倾斜侧面处断开。
例如，第一倾斜侧面51和第二倾斜侧面52与衬底基板10所成的锐角θ1和θ2的夹角的取值范围可以为30°～80°。
在本公开的实施例中，第一倾斜侧面51和第二倾斜侧面52也可为曲面或弧面，例如，可以包括凸面和凹面。如图4B所示，第一倾斜侧面51和第二倾斜侧面52为凹面状。
返回参照图3，在本公开的实施例中，像素界定层44的截面可以呈正梯形形状。隔断结构5和像素界定层44可以包含相同的材料，并且通过同一构图工艺形成。
如图3所示，所述显示基板还包括设置在衬底基板10上的导光结构6，导光结构6位于封装区域ENA中且靠近隔断结构5设置。至少一个所述导光结构6位于隔断结构5的至少一侧，例如，位于至少一个隔断结构5的第一侧和/或第二侧。例如，在图3所示的实施例中，设置有1个导光结构6，且该导光结构6位于2个隔断结构5之间，即，该导光结构6位于右侧的隔断结构5的第二侧和左侧的隔断结构5的第一侧。导光结构6用于引导光照射至隔断结构5的侧面与所述导光结构6相对的部分上，从而形成倒梯形或部分倒梯形的隔断结构5。
图5A和图5B分别示意性示出了根据本公开实施例的显示基板包括的导光结构的截面图。为了形成倒梯形的隔断结构5，可以先在衬底基板10上形成导光结构6。如图5A和图5B所示，所述导光结构6可以包括：设置在所述衬底基板上的第一反光层64；设置在所述第一反光层64远离所述衬底基板10一侧的第一导光层61；和设置在所述第一导光层61远离所述衬底基板10一侧的第二反光层65。
在一些示例中，所述导光结构6还可以包括：设置在所述第一反光层64与所述第一导光层61之间的第二导光层62；和设置在所述第一导光层61与所述第二反光层65之间的第三导光层63。所述第一导光层61的材料的折射率大于所述第二导光层62的材料的折射率，以及所述第一导光层61的材料的折射率大于所述第三导光层63的材料的折射率。
例如，所述第一导光层6的材料可以包含通过率和折射率较高的介电层材料，例如氮化硅、氧化硅、丙烯酸树脂等。
在一些示例中，所述导光结构6还可以包括吸光层66，所述吸光层66设置在所述第二反光层65远离所述衬底基板10的一侧。
例如，参照图5A，吸光层66、第二反光层65和第三导光层63中的每一个都具有开口VH，吸光层66、第二反光层65和第三导光层63中的每一个的开口VH彼此连通，以暴露第一导光层61的至少一部分。
例如，参照图5B，吸光层66和第二反光层65中的每一个都具有开口VH，吸光层66和第二反光层65中的每一个的开口VH彼此连通，以暴露第一导光层61的至少一部分。第一导光层61具有间隔槽61H，所述间隔槽61H将第一导光层61划分为第一导光子层611和第二导光子层612，所述间隔槽61H在所述衬底基板10上的正投影落入吸光层66和第二反光层65中的每一个的开口VH在所述衬底基板10上的正投影内。
参照图5A和图5B，第一导光层61包括远离所述衬底基板10的顶面61P，第一导光层的顶面61P到所述第一表面10P的垂直距离小于第一倾斜侧面51和第二倾斜侧面52中的每一个远离所述衬底基板10的一端51E、52E到所述第一表面10P的垂直距离。
图6示意性示出了根据本公开实施例的显示基板在显示区域AA中的截面图。如图6所示，所述显示基板可以包括：设置在衬底基板10上的有源层20，设置在有源层20远离衬底基板10一侧的第一绝缘层(例如栅极绝缘层)30，设置在第一绝缘层30远离衬底基板10一侧的栅极G1，设置在栅极G1远离衬底基板10一侧的第二绝缘层(例如层间绝缘层)60，设置在第二绝缘层60远离衬底基板10一侧的源极S1和漏极TD1，覆盖在源极S1和漏极TD1上的第三绝缘层(例如钝化层)70。其中，源极S1和漏极TD1分别通过过孔与有源层20连接。
所述显示基板还可以包括：设置在第三绝缘层70远离衬底基板10一侧的第四绝缘层(例如平坦化层)80。第二电极43通过形成在第三绝缘层70和第四绝缘层80中的过孔431与漏极TD1电连接。
在本公开的实施例中，第四绝缘层80的厚度大于第三绝缘层70的厚度。例如， 第三绝缘层70的厚度可以在
Figure PCTCN2021123068-appb-000001
(埃米)之间，第四绝缘层80的厚度可以在
Figure PCTCN2021123068-appb-000002
(埃米)之间。
再例如，第三绝缘层70和第四绝缘层80可包括无机绝缘材料、有机绝缘材料或它们的任何组合。例如，有机绝缘材料可包括聚酰亚胺、聚酰胺、丙烯酸树脂、酚树脂、苯并环丁烯等。
所述显示基板还可以包括设置在第二电极43远离衬底基板10一侧的像素界定层44。像素界定层44可以包括位于每一个子像素中的开口441。开口441暴露第二电极43的一部分。发光层42的一部分填充于该开口441中，以与暴露的第二电极43的部分接触。第一电极41位于发光层42远离衬底基板10的一侧。
在图中所示的示例性实施例中，为了描述方便，栅极G1所在的层可以称为第一导电层，源极S1和漏极TD1所在的层可以称为第二导电层，第二电极43所在的层可以称为第三导电层，第一电极41所在的层可以称为第四导电层。
例如，所述第一导电层可以是由栅极材料构成的导电层，所述第二导电层可以是由源漏极材料构成的导电层，所述第三导电层可以是由阳极材料构成的导电层，所述第四导电层可以是由阴极材料构成的导电层。
例如，所述栅极材料可以包括金属材料，例如Mo、Al、Cu等金属及其合金。所述源漏极材料可以包括金属材料，例如Mo、Al、Cu等金属及其合金。所述阳极材料可以包括金属导电材料，例如镁、铝、锂等金属及其合金。所述阴极材料可以包括透明导电材料，例如氧化铟锡(ITO)、氧化铟锌(IZO)等。
可选地，所述显示基板还可以包括遮光层21。遮光层21设置在有源层20靠近衬底基板10的一侧。遮光层21在衬底基板10上的正投影覆盖有源层20在衬底基板10上的正投影，这样，可以避免外界光线对有源层20的影响。所述显示基板还可以包括设置在遮光层21与有源层20之间的缓冲层22。
在本公开的实施例中，位于封装区域ENA中的导光结构6的膜层可以与位于显示区域AA中的像素单元的膜层位于同一层，这样，可以通过同一构图工艺同时形成位于显示区域AA中的像素单元的膜层和位于封装区域ENA中的导光结构6的膜层。也就是说，不需要增加额外的构图工艺来形成导光结构6，从而有利于简化所述显示基板的制造工艺。
例如，第二绝缘层60可以与第一导光层61位于同一层。即，第一导光层61可以包括层间绝缘层材料，从而有利于利用高折射率的材料形成所述第一导光层61。
例如，遮光层21和第一导电层中的一个与第一反光层64位于同一层，即，第一反光层64包含遮光层金属或栅极金属材料。
例如，第一绝缘层30与第二导光层62位于同一层，即，第二导光层62包含栅绝缘层材料。
例如，第三绝缘层70与第三导光层63位于同一层，即，第三导光层63包含钝化层材料或树脂材料。
例如，第二导电层和第三导电层中的一个与第二反光层65位于同一层，即，第二反光层65包含源漏金属材料或阳极材料。
下面，将进一步结合附图描述形成倒梯形的隔断结构5的工艺流程，在此基础上，进一步描述根据本公开实施例的显示基板的制造方法的工艺流程。
图7是根据本公开实施例的显示基板的制造方法的流程图，图8至图12分别示意性示出了根据本公开实施例的显示基板的制造方法的一些工艺步骤。结合参照图7至图12，所述显示基板的制造方法可以包括以下步骤。
在步骤S71中，提供衬底基板10，所述衬底基板10包括显示区域NA和包围所述显示区域的封装区域ENA。
在步骤S72中，在衬底基板10上形成导光结构6，所述导光结构6位于所述封装区域ENA中。
如图8所示，所述导光结构6具有相对的第一侧面6S1和第二侧面6S2，第一侧面6S1和第二侧面6S2中的一个靠近所述显示区域AA，第一侧面6S1和第二侧面6S2中的另一个远离所述显示区域AA。
在本公开的一些实施例中，步骤S72可以包括：在衬底基板10上形成第一反光层64；在所述第一反光层64远离所述衬底基板10一侧形成第二导光层62；在所述第二导光层62远离所述衬底基板10一侧形成第一导光层61；在所述第一导光层61远离所述衬底基板10一侧形成第三导光层63；和在所述第三导光层63远离所述衬底基板10一侧形成第二反光层65。所述第一导光层61的材料的折射率大于所述第二导光层62的材料的折射率，以及所述第一导光层61的材料的折射率大于所述第三导光层63 的材料的折射率。
在本公开的一些实施例中，如图11所示，步骤S72可以包括：在所述衬底基板10上形成第一反光层64；在所述第一反光层64远离所述衬底基板10一侧形成第一导光层61；和在所述第一导光层61远离所述衬底基板10一侧形成第二反光层65。
在本公开的一些实施例中，步骤S72还可以包括：在所述第二反光层65远离所述衬底基板10的一侧形成吸光层66。
需要说明的是，导光结构6的第一反光层64、第二导光层62、第一导光层61、第三导光层63、第二反光层65和吸光层66可以分别与显示区域AA中的一些膜层通过同一构图工艺或成膜工艺形成，也就是说，不需要增加额外的构图工艺来形成导光结构6，从而有利于简化所述显示基板的制造工艺。
例如，参照图8，步骤S72还可以包括：在吸光层66、第二反光层65和第三导光层63中的每一个中都形成开口VH，吸光层66、第二反光层65和第三导光层63中的每一个的开口VH彼此连通，以暴露所述第一导光层61的至少一部分。例如，吸光层66、第二反光层65和第三导光层63中的每一个的开口VH在第一导光层61上的正投影可以位于第一导光层61沿图8中所示的水平方向的大概中间位置。
例如，参照图11，步骤S72还可以包括：在吸光层66和第二反光层65中的每一个中都形成开口VH，吸光层66和第二反光层65中的每一个的开口VH彼此连通，以暴露所述第一导光层61的至少一部分。例如，吸光层66和第二反光层65中的每一个的开口VH在第一导光层61上的正投影可以位于第一导光层61沿图8中所示的水平方向的大概中间位置。
步骤S72还可以包括：在第一导光层61中形成间隔槽61H，所述间隔槽61H将所述第一导光层61划分为第一导光子层611和第二导光子层612，所述第一导光子层611具有面对所述第二导光子层612的第一侧壁611S，所述第二导光子层612具有面对所述第一导光子层611的第二侧壁612S。第一侧壁611S和第二侧壁612S彼此间隔开一定的距离。
在步骤S73中，如图9所示，在所述衬底基板10上涂覆正性光刻胶材料5L，所述正性光刻胶材料5L覆盖所述显示区域AA和所述封装区域ENA。如图9所示，所述正性光刻胶材料5L覆盖导光结构6。
在步骤S74中，通过构图工艺在所述封装区域ENA中形成隔断结构5。
在本公开的实施例中，可以基于下面的步骤执行所述步骤S74。
如图10所示，利用掩模板7，通过构图工艺形成所述隔断结构5。具体地，光(例如紫外光)LR经过掩模板7的开孔7H照射到所述正性光刻胶材料5L的一部分上，并且照射到所述导光结构6上。
在导光结构6的引导下，部分光从所述导光结构6的第一侧面6S1和第二侧面6S2射出，照射至所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分上。
例如，结合参照图8至图10，光LR经过掩模板的开孔7H以及吸光层66、第二反光层65和第三导光层63中的每一个的开口VH照射到所述第一导光层61上，以将光引入所述第一导光层61中。由于第一导光层61的材料的折射率大于第二导光层62和第三导光层63中每一个的材料的折射率，所以，光在第一导光层61中传播的过程中，可以在第一导光层61与第二导光层62之间的界面以及第一导光层61与第三导光层63之间的界面上形成全反射。进一步地，对于部分没有发生全反射的光，它们可以被第一反光层64和第二反光层65反射回第一导光层61中，以使得光保持在第一导光层61中传播。这样，在图10所示的实施例中，在第一导光层61中传播的光可以分别从所述导光结构6的第一侧面6S1和第二侧面6S2射出，分别照射至所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分上。
例如，在图11所示的实施例中，光LR经过掩模板的开孔7H以及吸光层66和第二反光层65中的每一个的开口VH照射到所述第一导光层61上，以将光引入所述第一导光层61中。在该实施例中，由于设置有间隔槽61H，所以，一部分光可以通过第一侧壁611S和第二侧壁612S从侧面进入第一导光层61中。光在第一导光层61中传播的过程中，向下传播的光和向上传播的光可以分别被第一反光层64和第二反光层65反射回第一导光层61中，以使得光保持在第一导光层61中传播。这样，在图11所示的实施例中，在第一导光层61中传播的光可以分别从所述导光结构6的第一侧面6S1和第二侧面6S2射出，分别照射至所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分上。
例如，对于少部分既没有发生全反射又没有被反光层反射的光，在朝向上方出射 的过程中，可以被吸光层66吸收，这样，可以保证所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分接收的光的光通量比所述正性光刻胶材料5L未与所述第一侧面6S1和所述第二侧面6S2相对的部分接收的光的光通量大，从而可以确保形成具有倒梯形或部分倒梯形的隔断结构5。
对经曝光的所述正性光刻胶材料5L执行显影工艺，在所述封装区域ENA中形成隔断结构5。在该步骤中，经曝光的所述正性光刻胶材料5L的部分在显影工艺中被去除。所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分接收的光的光通量比所述正性光刻胶材料5L未与所述第一侧面6S1和所述第二侧面6S2相对的部分接收的光的光通量大，即，所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分被曝光的宽度大于所述正性光刻胶材料5L未与所述第一侧面6S1和所述第二侧面6S2相对的部分被曝光的深度，所以，所述正性光刻胶材料5L与所述第一侧面6S1和所述第二侧面6S2相对的部分被去除的材料的宽度大，所述正性光刻胶材料5L未与所述第一侧面6S1和所述第二侧面6S2相对的部分被去除的材料的宽度小。这样，形成具有倒梯形或部分倒梯形的隔断结构5，如图12所示。
如上所述，每一个隔断结构5具有相对的第一侧FS和第二侧SS。结合参照图3和图12，位于右侧的隔断结构5具有第一倾斜侧面51，所述第一倾斜侧面51位于该隔垫结构5的第一侧FS，且从靠近所述衬底基板10向远离所述衬底基板10的方向上，所述第一倾斜侧面51朝向远离所述第二侧SS的方向倾斜，所述第一倾斜侧面51与所述衬底基板10之间具有第一空间SP1。位于左侧的隔断结构5具有第二倾斜侧面52，所述第二倾斜侧面52位于该隔垫结构5的第二侧SS，且从靠近所述衬底基板10向远离所述衬底基板10的方向上，所述第二倾斜侧面52朝向远离所述第一侧FS的方向倾斜，所述第二倾斜侧面52与所述衬底基板10之间具有第二空间SP2。
根据实际曝光量和曝光时间等因素，位于右侧的隔断结构5的第一倾斜侧面51和位于左侧的隔断结构5的第二倾斜侧面52可以形成为图4A或图4B所示的结构，或者形成图3所示的结构。
在本公开的实施例中，在所述构图工艺中，还在所述显示区域AA中形成像素界定层44。即，像素界定层44和隔断结构5是通过同一构图工艺形成的。也就是说，在本公开的实施例中，通过设置所述导光结构6，可以通过同一构图工艺，在显示区 域AA中形成正梯形的像素界定层44和倒梯形或部分倒梯形的隔断结构5。
在步骤S75中，可以通过蒸镀工艺在所述像素界定层44远离所述衬底基板10的一侧形成发光功能层40，例如，所述发光功能层40可以至少包括发光层42，或者，所述发光功能层40也可以包括发光层42和第二电极41。由于隔断结构5的一些侧面为上宽下窄的倾斜表面，例如上述的第一倾斜表面51和第二倾斜表面52，所以，发光功能层40至少在这些倾斜侧面处断开，如图12所示。
在步骤S76中，在所述衬底基板10的封装区域ENA中形成封框胶3，所述封框胶3在所述衬底基板10上的正投影覆盖所述隔断结构5和所述导光结构6中每一个在所述衬底基板10上的正投影。
需要说明的是，根据本公开的一些实施例，上述制造方法中的一些步骤可以单独执行或组合执行，以及可以并行执行或顺序执行，并不局限于图7所示的具体操作顺序。
图13是根据本公开的一些示例性实施例的显示装置的示意图。所述显示装置100包括上述的显示面板。例如，它包括显示区域AA和周边区域NA，显示区域AA和周边区域NA中的膜层结构可以参照上述各个实施例的描述，在此不再赘述。
所述显示装置可以包括任何具有显示功能的设备或产品。例如，所述显示装置可以是智能电话、移动电话、电子书阅读器、台式电脑(PC)、膝上型PC、上网本PC、个人数字助理(PDA)、便携式多媒体播放器(PMP)、数字音频播放器、移动医疗设备、相机、可穿戴设备(例如头戴式设备、电子服饰、电子手环、电子项链、电子配饰、电子纹身、或智能手表)、电视机等。
应该理解，根据本公开实施例的显示装置具有上述显示基板和显示面板的所有特点和优点，具体可以参见上文的描述。
虽然本公开的总体技术构思的一些实施例已被显示和说明，本领域普通技术人员将理解，在不背离所述总体技术构思的原则和精神的情况下，可对这些实施例做出改变，本公开的范围以权利要求和它们的等同物限定。

Claims (20)

  1. 一种显示基板，其特征在于，所述显示基板包括：
    衬底基板，所述衬底基板包括显示区域和包围所述显示区域的封装区域，所述封装区域用于设置封框胶；
    设置在所述衬底基板上的隔断结构，所述隔断结构位于所述封装区域中，所述隔断结构具有相对的第一侧和第二侧，所述第一侧和所述第二侧中的一个靠近所述显示区域，所述第一侧和所述第二侧中的另一个远离所述显示区域，以及；
    设置在所述衬底基板上的导光结构，所述导光结构位于所述封装区域中且靠近所述隔断结构设置，
    其中，至少一个所述导光结构位于所述隔断结构的第一侧，用于引导光照射至所述隔断结构位于第一侧的侧面与所述导光结构相对的部分上；以及
    所述隔断结构具有第一倾斜侧面，所述第一倾斜侧面位于所述第一侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第一倾斜侧朝向远离所述第二侧的方向倾斜，所述第一倾斜侧面与所述衬底基板之间具有第一空间。
  2. 根据权利要求1所述的显示基板，其中，所述导光结构包括：
    设置在所述衬底基板上的第一反光层；
    设置在所述第一反光层远离所述衬底基板一侧的第一导光层；和
    设置在所述第一导光层远离所述衬底基板一侧的第二反光层。
  3. 根据权利要求2所述的显示基板，其中，所述导光结构还包括：
    设置在所述第一反光层与所述第一导光层之间的第二导光层；和
    设置在所述第一导光层与所述第二反光层之间的第三导光层，
    其中，所述第一导光层的材料的折射率大于所述第二导光层的材料的折射率，以及所述第一导光层的材料的折射率大于所述第三导光层的材料的折射率。
  4. 根据权利要求2或3所述的显示基板，其中，所述导光结构还包括吸光层，所述吸光层设置在所述第二反光层远离所述衬底基板的一侧。
  5. 根据权利要求4所述的显示基板，其中，所述吸光层、所述第二反光层和所述第三导光层中的每一个都具有开口，所述吸光层、所述第二反光层和所述第三导光层中的每一个的开口彼此连通，以暴露所述第一导光层的至少一部分。
  6. 根据权利要求5所述的显示基板，其中，所述第一导光层具有间隔槽，所述间隔槽将所述第一导光层划分为第一导光子层和第二导光子层，所述间隔槽在所述衬底基板上的正投影落入所述吸光层、所述第二反光层和所述第三导光层中的每一个的开口在所述衬底基板上的正投影内。
  7. 根据权利要求1至3中任一项所述的显示基板，其中，所述隔断结构包括远离所述衬底基板的顶面，所述衬底基板包括面向所述隔离结构的第一表面，所述第一倾斜侧面远离所述衬底基板的一端到所述第一表面的垂直距离小于或等于所述顶面到所述第一表面的垂直距离。
  8. 根据权利要求7所述的显示基板，其中，所述隔断结构还包括第二倾斜侧面，所述第二倾斜侧面位于所述第二侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第二倾斜侧朝向远离所述第一侧的方向倾斜，所述第二倾斜侧面与所述衬底基板之间具有第二空间。
  9. 根据权利要求8所述的显示基板，其中，所述第二倾斜侧面远离所述衬底基板的一端到所述第一表面的垂直距离小于或等于所述顶面到所述第一表面的垂直距离。
  10. 根据权利要求9所述的显示基板，其中，所述第一导光层包括远离所述衬底基板的顶面，所述第一导光层的顶面到所述第一表面的垂直距离小于所述第一倾斜侧面和所述第二倾斜侧面中的每一个远离所述衬底基板的一端到所述第一表面的垂直距离。
  11. 根据权利要求4所述的显示基板，其中，所述显示基板还包括多个像素单元， 所述多个像素单元设置在所述衬底基板的显示区域中，每一个所述像素单元包括像素驱动电路和与所述像素驱动电路电连接的发光器件，所述发光器件包括第一电极、第二电极以及设置在所述第一电极与所述第二电极之间的发光层，所述像素驱动电路包括设置在所述衬底基板上的至少一个薄膜晶体管，所述薄膜晶体管包括有源层、栅极、源极和漏极；
    其中，所述显示基板还包括：设置于所述有源层靠近所述衬底基板一侧的遮光层；设置于所述有源层远离所述衬底基板一侧的第一导电层，所述栅极位于所述第一导电层；设置于所述第一导电层远离所述衬底基板一侧的第二导电层，所述源极和漏极位于所述第二导电层；设置于所述第二导电层远离所述衬底基板一侧的第三导电层，所述第二电极位于所述第三导电层；设置在所述有源层与所述第一导电层之间的第一绝缘层；设置在所述第一导电层与所述第二导电层之间的第二绝缘层；设置在所述第二导电层与所述第三导电层之间的第三绝缘层；以及
    其中，所述第二绝缘层与所述第一导光层位于同一层。
  12. 根据权利要求11所述的显示基板，其中，所述遮光层和所述第一导电层中的一个与所述第一反光层位于同一层；和/或，
    所述第一绝缘层与所述第二导光层位于同一层；和/或，
    所述第三绝缘层与所述第三导光层位于同一层；和/或，
    所述第二导电层和所述第三导电层中的一个与所述第二反光层位于同一层。
  13. 根据权利要求1至3中任一项所述的显示基板，其中，所述显示基板包括至少两个所述隔断结构，至少一个所述导光结构位于两个隔断结构之间。
  14. 根据权利要求1至3中任一项所述的显示基板，其中，所述显示基板包括至少两个所述导光结构，至少一个导光结构位于所述隔断结构的第一侧，至少一个导光结构位于所述隔断结构的第二侧。
  15. 根据权利要求11所述的显示基板，其中，所述显示基板还包括像素界定层，所述像素界定层位于所述第一电极远离所述衬底基板的一侧；以及
    所述隔断结构和所述像素界定层位于同一层。
  16. 根据权利要求15所述的显示基板，其中，所述隔断结构包含正性光刻胶材料。
  17. 根据权利要求1至3中任一项所述的显示基板，其中，所述显示基板还包括封框胶，所述封框胶位于所述封装区域，所述封框胶在所述衬底基板上的正投影覆盖所述隔断结构和所述导光结构中每一个在所述衬底基板上的正投影。
  18. 根据权利要求11所述的显示基板，其中，所述发光器件的第二电极和发光层中的每一个至少在所述第一倾斜侧面处断开。
  19. 一种显示装置，包括：
    根据权利要求1至18中任一项所述的显示基板；和
    与所述显示基板相对设置的第二基板，
    其中，所述封装区域中设置有封框胶，所述封框胶分别与所述显示基板和所述第二基板接触。
  20. 一种显示基板的制造方法，其中，所述制造方法包括：
    提供衬底基板，所述衬底基板包括显示区域和包围所述显示区域的封装区域；
    在所述衬底基板上形成导光结构，所述导光结构位于所述封装区域中，所述导光结构具有相对的第一侧面和第二侧面，所述第一侧面和所述第二侧面中的一个靠近所述显示区域，所述第一侧面和所述第二侧面中的另一个远离所述显示区域；
    在所述衬底基板上涂覆正性光刻胶材料，所述正性光刻胶材料覆盖所述显示区域和所述封装区域；以及
    通过构图工艺在所述封装区域中形成隔断结构，
    其中，通过构图工艺在所述封装区域中形成隔断结构包括：
    光经过掩模板的开孔照射到所述正性光刻胶材料的一部分上，并且照射到所述导光结构上；
    在导光结构的引导下，部分光从所述导光结构的第一侧面和第二侧面射出，照射 至所述正性光刻胶材料与所述第一侧面和所述第二侧面相对的部分上；以及
    对经曝光的所述正性光刻胶材料执行显影工艺，在所述封装区域形成隔断结构，使得：所述隔断结构具有相对的第一侧和第二侧，所述隔断结构具有第一倾斜侧面，所述第一倾斜侧面位于所述第一侧，且从靠近所述衬底基板向远离所述衬底基板的方向上，所述第一倾斜侧朝向远离所述第二侧的方向倾斜，所述第一倾斜侧面与所述衬底基板之间具有第一空间，其中，所述第一侧和所述第二侧中的一个靠近所述显示区域，所述第一侧和所述第二侧中的另一个远离所述显示区域。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080174712A1 (en) * 2007-01-24 2008-07-24 Samsung Electronics Co., Ltd. Thin film transistor array panel
CN108091675A (zh) * 2017-12-13 2018-05-29 京东方科技集团股份有限公司 显示基板及其制作方法
CN109461834A (zh) * 2018-09-19 2019-03-12 云谷（固安）科技有限公司 发光显示器件及其制作方法、电子设备
CN110112201A (zh) * 2019-05-22 2019-08-09 合肥鑫晟光电科技有限公司 显示基板及其制造方法、显示装置
CN110678997A (zh) * 2019-05-31 2020-01-10 京东方科技集团股份有限公司 制造显示基板的方法、显示基板和显示设备
CN112467054A (zh) * 2020-11-30 2021-03-09 京东方科技集团股份有限公司 显示基板及其制造方法和显示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080174712A1 (en) * 2007-01-24 2008-07-24 Samsung Electronics Co., Ltd. Thin film transistor array panel
CN108091675A (zh) * 2017-12-13 2018-05-29 京东方科技集团股份有限公司 显示基板及其制作方法
CN109461834A (zh) * 2018-09-19 2019-03-12 云谷（固安）科技有限公司 发光显示器件及其制作方法、电子设备
CN110112201A (zh) * 2019-05-22 2019-08-09 合肥鑫晟光电科技有限公司 显示基板及其制造方法、显示装置
CN110678997A (zh) * 2019-05-31 2020-01-10 京东方科技集团股份有限公司 制造显示基板的方法、显示基板和显示设备
CN112467054A (zh) * 2020-11-30 2021-03-09 京东方科技集团股份有限公司 显示基板及其制造方法和显示装置

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