WO2019205426A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2019205426A1
WO2019205426A1 PCT/CN2018/105330 CN2018105330W WO2019205426A1 WO 2019205426 A1 WO2019205426 A1 WO 2019205426A1 CN 2018105330 W CN2018105330 W CN 2018105330W WO 2019205426 A1 WO2019205426 A1 WO 2019205426A1
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Prior art keywords
layer
inorganic barrier
oled
thin film
light extraction
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PCT/CN2018/105330
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English (en)
French (fr)
Inventor
黄辉
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深圳市华星光电技术有限公司
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Priority to US16/091,014 priority Critical patent/US10818876B2/en
Publication of WO2019205426A1 publication Critical patent/WO2019205426A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • the active matrix flat panel display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • organic light-emitting diode (OLED) display technology is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin and light, fast response.
  • Wide viewing angle, low power consumption and flexible display it is known as “dream display”, and its production equipment investment is much smaller than Thin Film Transistor-Liquid Crystal Display (TFT-LCD).
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
  • OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, OLED displays have very high requirements on packaging, and generally require a water vapor transmission rate (WVTR) of less than 10 -6 at 85 ° C and 85 RH. g/m 2 /day, therefore, the sealing of the inside of the device by the packaging of the OLED device, as much as possible from the external environment, is essential for the stable illumination of the OLED device.
  • WVTR water vapor transmission rate
  • the package of the OLED device is mainly packaged on the hard package cover (such as glass or metal) through the package, but the method is not suitable for the flexible device, so there is also a technical solution for packaging the OLED device through the laminated film.
  • the thin film encapsulation method generally forms an inorganic barrier layer having a plurality of water-blocking and gas barrier properties of an inorganic material over the OLED device on the substrate, and forms an organic material between the two inorganic barrier layers.
  • a flexible organic buffer layer is a plurality of water-blocking and gas barrier properties of an inorganic material over the OLED device on the substrate, and forms an organic material between the two inorganic barrier layers.
  • OLED displays have many advantages, they also have their own shortcomings.
  • Low photon utilization is one of the shortcomings. Due to the influence of indium tin oxide (ITO) and glass substrate, reflection and refraction of various functional layers inside the OLED device, about 80% of photons cannot escape into the air, resulting in low photon utilization.
  • ITO indium tin oxide
  • researchers have proposed many methods, such as changing the structure of the device electrode, inserting a light extraction layer inside the OLED, or etching various microstructures on the surface of the substrate. These methods can improve the light extraction efficiency of the OLED to some extent, but the process is complicated, and it is difficult to realize in practical applications, and changing the internal structure or etching easily affects the performance of the OLED itself.
  • An object of the present invention is to provide an OLED display panel.
  • the light extraction layer is disposed in the thin film encapsulation layer, and the stability of the light extraction layer can be improved while avoiding the encapsulation effect of the thin film encapsulation layer, thereby avoiding the prior art light extraction layer.
  • the internal organic film layer is destroyed in the OLED device, and the one-to-one correspondence between the light extraction layer and the OLED device can be achieved.
  • the object of the present invention is to provide a method for fabricating an OLED display panel, which can be used in a thin film encapsulation layer to improve the stability of the light extraction layer while not affecting the encapsulation effect of the thin film encapsulation layer, thereby avoiding the existing
  • the technology places the light extraction layer in the OLED device to destroy the internal organic film layer, and can realize one-to-one correspondence between the light extraction layer and the OLED device.
  • the present invention provides an OLED display panel, including a substrate, an OLED array layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate and the OLED array layer, and a thin film encapsulation layer disposed on the thin film encapsulation layer Light extraction layer inside;
  • the OLED array layer includes a plurality of OLED devices distributed in a matrix
  • the thin film encapsulation layer includes at least two inorganic barrier layers and at least one organic buffer layer, wherein a side of the inorganic barrier layer away from the substrate is corresponding to a plurality of pixel recesses above the plurality of OLED devices groove;
  • the light extraction layer is correspondingly disposed in the plurality of pixel grooves
  • the light extraction layer is covered with a flattening film enclosing the plurality of pixel recesses to planarize the surface of the inorganic barrier layer provided with the plurality of pixel recesses.
  • the organic buffer layer is one layer less than the inorganic barrier layer, and the inorganic barrier layer and the organic buffer layer are alternately stacked, and the lowermost layer of the thin film encapsulation layer is Inorganic barrier layer;
  • the inorganic barrier layer has two or more layers, and the plurality of pixel recesses are disposed on the second inorganic barrier layer having an organic buffer layer on the upper and lower sides of the thin film encapsulation layer.
  • the number of layers of the inorganic barrier layer is three, and the plurality of pixel recesses are disposed on the inorganic barrier layer of the second layer in the bottom-up order in the thin film encapsulation layer, and the light extraction layer is disposed in the
  • the thin film encapsulation layer is in the inorganic barrier layer of the second layer in the order from bottom to top.
  • the light extraction layer is made of a titanium dioxide sol, a magnesium oxide sol or an organic solution.
  • the flattening film is the same material as the inorganic barrier layer
  • the material of the inorganic barrier layer is silicon nitride
  • the material of the organic buffer layer is silicon carbonitride or silicon oxycarbide.
  • the OLED display panel further includes a TFT layer disposed between the substrate and the OLED array layer, and the OLED array layer is disposed on the TFT layer;
  • the substrate is a flexible substrate.
  • the plurality of OLED devices include a plurality of red OLED devices, a plurality of green OLED devices, and a plurality of blue OLED devices; or the OLED device is a white OLED device, and the OLED display panel further includes a thin film package A color filter layer within the layer.
  • the invention also provides a method for manufacturing an OLED display panel, comprising the following steps:
  • Step S1 providing a substrate, forming an OLED array layer on the substrate;
  • the OLED array layer includes a plurality of OLED devices distributed in a matrix;
  • Step S2 forming a thin film encapsulation layer on the substrate and the OLED array layer, and preparing a light extraction layer in the thin film encapsulation layer during the process of fabricating the thin film encapsulation layer;
  • the thin film encapsulation layer includes at least two inorganic barrier layers and at least one organic buffer layer.
  • one side of the inorganic barrier layer away from the substrate corresponds to the plurality of a plurality of pixel grooves are formed on the OLED device, and then a light extraction material is provided, and the light extraction layer is correspondingly formed in the plurality of pixel grooves to form the light extraction layer, and then filled in the plurality of pixel grooves
  • the inorganic material forms a planarization film covering the light extraction layer to planarize the surface of the inorganic barrier layer provided with the plurality of pixel grooves.
  • the organic buffer layer is one layer less than the inorganic barrier layer, and the inorganic barrier layer and the organic buffer layer are alternately laminated to form a lowermost layer of the thin film encapsulation layer.
  • the layer is an inorganic barrier layer;
  • the number of layers of the inorganic barrier layer is two or more, and the plurality of pixel recesses are disposed on the second inorganic barrier layer having an organic buffer layer on the upper and lower sides of the thin film encapsulation layer;
  • the inorganic barrier layer is formed by chemical vapor deposition
  • the plurality of pixel recesses are formed on the inorganic barrier layer by a patterning process, and the patterning process specifically includes a photoresist coating step, an exposure step, a development step, and etching. Steps and removal of the photoresist step.
  • the number of layers of the inorganic barrier layer is three, and the plurality of pixel recesses are disposed on the inorganic barrier layer of the second layer in the bottom-up order in the thin film encapsulation layer, and the light extraction layer is disposed in the
  • the thin film encapsulation layer is in the inorganic barrier layer of the second layer in the order from bottom to top.
  • the light extraction material is a titanium dioxide sol, a magnesium oxide sol or an organic solution
  • the light extraction layer is formed by coating, vapor deposition or spraying.
  • the produced flattening film is the same as the material of the inorganic barrier layer
  • the material of the inorganic barrier layer is silicon nitride
  • the material of the organic buffer layer is silicon carbonitride or silicon oxycarbide.
  • the step S1 further includes: forming a TFT layer on the substrate before the OLED array layer is formed, wherein the OLED array layer is formed on the TFT layer;
  • the substrate is a flexible substrate.
  • the plurality of OLED devices include a plurality of red OLED devices, a plurality of green OLED devices, and a plurality of blue OLED devices; or the OLED device is a white OLED device, and the OLED display panel further includes a thin film package A color filter layer within the layer.
  • the present invention provides an OLED display panel comprising a substrate, an OLED array layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate and the OLED array layer, and light extraction disposed in the thin film encapsulation layer a layer
  • the thin film encapsulation layer includes an inorganic barrier layer and an organic buffer layer, wherein a side of the inorganic barrier layer away from the substrate corresponds to a plurality of pixel recesses disposed above the plurality of OLED devices, and the light extraction layer is correspondingly disposed at the plurality of In the pixel recess, the light extraction layer is covered with a flattening film enclosing the plurality of pixel recesses to planarize the surface of the inorganic barrier layer, by placing the light extraction layer on the film In the encapsulation layer, the stability of the light extraction layer can be improved while preventing the encapsulation effect of the thin film encapsulation layer, and the light extraction layer is prevented from being destroyed by
  • the destruction of the film layer and the one-to-one correspondence between the light extraction layer and the OLED device can be achieved.
  • the invention provides a method for fabricating an OLED display panel, wherein the light extraction layer is formed in the thin film encapsulation layer, and the stability of the light extraction layer can be improved while not affecting the encapsulation effect of the thin film encapsulation layer, and the prior art is avoided.
  • the extraction layer is placed in the OLED device to destroy the internal organic film layer, and the one-to-one correspondence between the light extraction layer and the OLED device can be achieved.
  • FIG. 1 is a schematic structural view of an OLED display panel of the present invention
  • FIG. 2 is a schematic flow chart of a method for fabricating an OLED display panel of the present invention
  • 4-7 are schematic diagrams showing the step S2 of the method for fabricating the OLED display panel of the present invention.
  • the present invention firstly provides an OLED display panel, comprising a substrate 100, a TFT layer 500 disposed on the substrate 100, an OLED array layer 200 disposed on the TFT layer 500, and a substrate disposed on the substrate.
  • the OLED array layer 200 includes a plurality of OLED devices 210 distributed in a matrix.
  • the thin film encapsulation layer 300 includes at least two inorganic barrier layers 310 and at least one organic buffer layer 320, wherein the organic buffer layer 320 is one layer less than the inorganic barrier layer 310.
  • the inorganic barrier layer 310 and the organic buffer layer 320 are alternately stacked, and the lowermost layer of the thin film encapsulation layer 300 is an inorganic barrier layer 310.
  • One of the inorganic barrier layers 310 away from the substrate 100 is provided with a plurality of pixel recesses 305 corresponding to the plurality of OLED devices 210.
  • the light extraction layer 400 is correspondingly disposed in the plurality of pixel grooves 305.
  • the light extraction layer 400 is further covered with a flattening film 306 that is enclosed in the plurality of pixel recesses 305, so that the surface of the inorganic barrier layer 310 provided with the plurality of pixel recesses 305 is flat.
  • the inorganic barrier layer 310 is made to have a uniform film thickness, and the light extraction layer 400 is ensured to be inside the thin film encapsulation layer 300, and the stress and encapsulation effect between the light extraction layer 400 and the film encapsulation layer 300 are also prevented. damage.
  • the flattening film 306 is the same material as the inorganic barrier layer 310.
  • the plurality of pixel recesses 305 may be disposed on the lowermost inorganic barrier layer 310, that is, the light extraction layer 400 is disposed in the lowermost inorganic barrier layer 310, but this may increase the process difficulty. Because the inorganic barrier layer 310 is closest to the OLED array layer 200, the OLED device 210 may be damaged to some extent during the fabrication of the light extraction layer 400.
  • the plurality of pixel recesses 305 may also be disposed on the uppermost inorganic barrier layer 310, that is, the light extraction layer 400 is disposed in the uppermost inorganic barrier layer 310, but only the light extraction layer 400 is flattened above. The film 306 is covered, and the light extraction layer 400 is less effective in blocking oxygen from water.
  • the inorganic barrier layer 310 is preferably disposed in two or more layers, and the plurality of pixel recesses 305 are preferably disposed on the intermediate inorganic barrier layer 310 between the uppermost layer and the lowermost layer, that is, the light
  • the extraction layer 400 is disposed within the intermediate inorganic barrier layer 310.
  • the inorganic barrier layer 310 is three layers, and the plurality of pixel recesses 305 are disposed on the second inorganic barrier layer 310 in a bottom-up order, that is, the light extraction layer 400 is disposed on The second inorganic barrier layer 310 is in the order from bottom to top.
  • the light extraction layer 400 is made of an inorganic material (for example, a titanium oxide sol or a magnesium oxide sol) or an organic solution.
  • the material of the inorganic barrier layer 310 is preferably silicon nitride (SiNx) which is excellent in blocking water oxygen, but is not limited to silicon nitride.
  • the material of the organic buffer layer 320 is silicon carbonitride (SiCN) or silicon oxycarbide (SiOC).
  • the OLED display panel is a flexible display panel
  • the substrate 100 is a flexible substrate.
  • the OLED display panel realizes color display by a side-by-side structure in which red, green, and blue (RGB) sub-pixels respectively emit light
  • the plurality of OLED devices 210 include a plurality of red OLED devices, and more Green OLED devices and multiple blue OLED devices; or,
  • the OLED display panel realizes color display by a tandem WOLED+CF structure in which a white organic light emitting diode (WOLED) and a color filter (CF) layer are stacked, the OLED device 210 is a white OLED device, and the OLED display panel further includes a color filter layer disposed in the thin film encapsulation layer 300.
  • WOLED white organic light emitting diode
  • CF color filter
  • the light extraction layer 400 is disposed in the thin film encapsulation layer 300, and the stability of the light extraction layer 400 can be improved while preventing the light extraction layer 400 from being water and oxygen. Destruction avoids the prior art to damage the internal organic film layer by placing the light extraction layer 400 in the OLED device 210, and one-to-one correspondence between the light extraction layer 400 and the OLED device 210 can be achieved.
  • the present invention further provides a method for fabricating an OLED display panel, including the following steps:
  • Step S1 as shown in FIG. 3, a substrate 100 is provided, a TFT layer 500 is formed on the substrate 100, and an OLED array layer 200 is formed on the TFT layer 500.
  • the OLED array layer 200 includes a plurality of matrix distributions. OLED device 210.
  • the substrate 100 is a flexible substrate.
  • Step S2 as shown in FIG. 4-7, a thin film encapsulation layer 300 is formed on the substrate 100 and the OLED array layer 200, and in the process of fabricating the thin film encapsulation layer 300, light is formed in the thin film encapsulation layer 300.
  • the layer 400 is extracted to obtain an OLED display panel as shown in FIG.
  • the thin film encapsulation layer 300 includes at least two inorganic barrier layers 310 and at least one organic buffer layer 320, wherein the organic buffer layer 320 is one layer less than the inorganic barrier layer 310.
  • the inorganic barrier layer 310 and the organic buffer layer 320 are alternately laminated, and the lowermost layer of the thin film encapsulation layer 300 is an inorganic barrier layer 310.
  • one of the inorganic barriers is formed.
  • a plurality of pixel recesses 305 are formed on the side away from the substrate 100 corresponding to the plurality of OLED devices 210, and then a light extraction material is provided, in which the plurality of pixel recesses 305 are provided.
  • Layer 300 film The stress between the package and the packaging effect is destroyed.
  • the plurality of pixel recesses 305 may be disposed on the lowermost inorganic barrier layer 310, that is, the light extraction layer 400 is disposed in the lowermost inorganic barrier layer 310, but this may increase the process difficulty. Because the inorganic barrier layer 310 is closest to the OLED array layer 200, the OLED device 210 may be damaged to some extent during the fabrication of the light extraction layer 400; the plurality of pixel recesses 305 may also be disposed on the uppermost layer.
  • the inorganic barrier layer 310, that is, the light extraction layer 400 is disposed in the uppermost inorganic barrier layer 310, but such that only the planarization film 306 is covered above the light extraction layer 400, and the light extraction layer 400 is more isolated from water and oxygen. difference.
  • the inorganic barrier layer 310 is preferably disposed in two or more layers, and the plurality of pixel recesses 305 are preferably disposed on the intermediate inorganic barrier layer 310 between the uppermost layer and the lowermost layer, that is, the light
  • the extraction layer 400 is disposed within the intermediate inorganic barrier layer 310.
  • the inorganic barrier layer 310 is three layers, and the plurality of pixel recesses 305 are disposed on the second inorganic barrier layer 310 in a bottom-up order, that is, the light extraction layer 400 is disposed on The second inorganic barrier layer 310 is in the order from bottom to top.
  • the light extraction material is a titanium dioxide sol, a magnesium oxide sol or an organic solution
  • the light extraction layer 400 is formed by coating, vapor deposition or spraying.
  • the flattening film 306 is made of the same material as the inorganic barrier layer 310.
  • the inorganic barrier layer 310 is formed by chemical vapor deposition (CVD).
  • the plurality of pixel recesses 305 are formed on the inorganic barrier layer 310 by a patterning process, and the patterning process specifically includes a photoresist coating step and an exposure step sequentially performed. , a development step, an etching step, and a photoresist removal step.
  • the material of the inorganic barrier layer 310 is preferably silicon nitride which has a good effect of blocking water and oxygen, but is not limited to silicon nitride.
  • the material of the organic buffer layer 320 is silicon carbonitride or silicon oxycarbide.
  • the fabricated OLED display panel realizes color display by a side-by-side structure in which red, green, and blue sub-pixels respectively emit light
  • the plurality of OLED devices 210 include a plurality of red OLED devices, a plurality of green OLED devices, and a plurality of blue colors.
  • OLED device or,
  • the OLED display panel realizes color display by a tandem structure in which a white organic light emitting diode and a color filter layer are stacked.
  • the OLED device 210 is a white OLED device, and the OLED display panel further includes a thin film encapsulation layer 300. Inner color filter layer.
  • the invention provides a method for fabricating an OLED display panel, and the light extraction layer 400 is formed in the thin film encapsulation layer 300, and the stability of the light extraction layer 400 can be improved while not affecting the encapsulation effect of the thin film encapsulation layer 300.
  • the present invention provides an OLED display panel including a substrate, an OLED array layer disposed on the substrate, a thin film encapsulation layer disposed on the substrate and the OLED array layer, and a light extraction layer disposed in the thin film encapsulation layer.
  • the thin film encapsulation layer includes an inorganic barrier layer and an organic buffer layer, wherein a side of the inorganic barrier layer away from the substrate corresponds to a plurality of pixel recesses disposed above the plurality of OLED devices, and the light extraction layer is correspondingly disposed on the plurality of In the pixel recess, the light extraction layer is covered with a flattening film enclosing the plurality of pixel recesses to planarize the surface of the inorganic barrier layer, and the light extraction layer is disposed on the thin film package.
  • the stability of the light extraction layer can be improved while preventing the encapsulation effect of the thin film encapsulation layer, and the light extraction layer is prevented from being destroyed by water and oxygen, thereby avoiding the prior art to place the light extraction layer in the OLED device and the internal organic film.
  • the destruction of the layer and the one-to-one correspondence between the light extraction layer and the OLED device can be achieved.
  • the invention provides a method for fabricating an OLED display panel, wherein the light extraction layer is formed in the thin film encapsulation layer, and the stability of the light extraction layer can be improved while not affecting the encapsulation effect of the thin film encapsulation layer, and the prior art is avoided.
  • the extraction layer is placed in the OLED device to destroy the internal organic film layer, and the one-to-one correspondence between the light extraction layer and the OLED device can be achieved.

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Abstract

本发明提供一种OLED显示面板及其制作方法。本发明的OLED显示面板，包括基板、OLED阵列层、薄膜封装层以及设于薄膜封装层内的光提取层，所述薄膜封装层包括无机阻挡层和有机缓冲层，其中一无机阻挡层远离基板的一侧对应于多个OLED器件的上方设有多个像素凹槽，光提取层对应设于该多个像素凹槽内，所述光提取层上覆盖有将其封闭在像素凹槽内的平化膜，以使其所在无机阻挡层的表面平整，通过将光提取层设于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，防止光提取层被水氧破坏，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。其中，有机发光二极管(organic light-emitting diode，OLED)显示技术是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
OLED显示技术与传统的液晶显示技术不同，无需背光灯，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。但是由于有机材料易与水汽或氧气反应，作为基于有机材料的显示设备，OLED显示屏对封装的要求非常高，一般要求其在85℃、85RH下的水汽透过率(WVTR)小于10 -6g/m 2/day，因此，通过OLED器件的封装提高器件内部的密封性，尽可能的与外部环境隔离，对于OLED器件的稳定发光至关重要。
目前OLED器件的封装主要在硬质封装盖板(如玻璃或金属)上通过封装胶封装，但是该方法并不适用于柔性器件，因此也有技术方案通过叠层的薄膜对OLED器件进行封装，该薄膜封装方式一般是在基板上的OLED器件上方形成多层为无机材料的阻水阻气性好的无机阻挡层(barrier layer)，并在两层无机阻挡层之间形成一层为有机材料的柔韧性好的有机缓冲层(buffer layer)。
尽管OLED显示器具有众多优点，但是它也有自身的不足，光子利用率低就是其中一个不足。由于受铟锡氧化物(ITO)与玻璃基底、OLED器件内部各种功能层的反射和折射等因素的影响，大约有80％的光子不能逸 出至空气中，导致光子利用率低。为了提高器件的取光效率，研究者提出了许多方法，比如通过改变器件电极的结构，在OLED内部插入光提取层，或者在基底表面刻蚀各种微结构等。这些方法都可以在一定程度上提高OLED的取光效率，但过程复杂，在实际应用中难以实现，且改变内部结构或刻蚀容易影响OLED的本身性能。
发明内容
本发明的目的在于提供一种OLED显示面板，光提取层设于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。
本发明的目的还在于提供一种OLED显示面板的制作方法，将光提取层制作于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。
为实现上述目的，本发明提供一种OLED显示面板，包括基板、设于所述基板上的OLED阵列层、设于所述基板和OLED阵列层上的薄膜封装层以及设于所述薄膜封装层内的光提取层；
所述OLED阵列层包括多个呈矩阵式分布的OLED器件；
所述薄膜封装层包括至少两层无机阻挡层和至少一层有机缓冲层，其中一所述无机阻挡层远离所述基板的一侧对应于所述多个OLED器件的上方设有多个像素凹槽；
所述光提取层对应设于所述多个像素凹槽内；
所述光提取层上覆盖有将其封闭在所述多个像素凹槽内的平化膜，以使设有所述多个像素凹槽的无机阻挡层表面平整。
所述薄膜封装层中，所述有机缓冲层比所述无机阻挡层在层数上少一层，所述无机阻挡层和有机缓冲层交替层叠设置，所述薄膜封装层的最下一层为无机阻挡层；
所述无机阻挡层的层数为两层以上，所述多个像素凹槽设于所述薄膜封装层中上下两侧具有有机缓冲层的第二层无机阻挡层上。
所述无机阻挡层的层数为三层，所述多个像素凹槽设于所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层上，所述光提取层设置在所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层内。
所述光提取层的制作材料为二氧化钛溶胶、氧化镁溶胶或者有机溶 液。
所述平化膜与所述无机阻挡层的材料相同；
所述无机阻挡层的材料为氮化硅；
所述有机缓冲层的材料为碳氮化硅或碳氧化硅。
所述的OLED显示面板还包括设于所述基板和OLED阵列层之间的TFT层，所述OLED阵列层设于所述TFT层上；
所述基板为柔性基板。
所述多个OLED器件包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，所述OLED器件为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层内的彩色滤光层。
本发明还提供一种OLED显示面板的制作方法，包括以下步骤：
步骤S1、提供基板，在所述基板上形成OLED阵列层；所述OLED阵列层包括多个呈矩阵式分布的OLED器件；
步骤S2、在所述基板和OLED阵列层上制作薄膜封装层，并在制作所述薄膜封装层过程中，在所述薄膜封装层内制作光提取层；
所述薄膜封装层包括至少两层无机阻挡层和至少一层有机缓冲层，在所述薄膜封装层制作过程中，在其中一所述无机阻挡层远离所述基板的一侧对应于所述多个OLED器件的上方制作多个像素凹槽，然后提供光提取材料，在所述多个像素凹槽内对应加入光提取材料形成所述光提取层，再在所述多个像素凹槽内填充无机材料形成覆盖所述光提取层的平化膜，以使设有所述多个像素凹槽的无机阻挡层表面平整。
所述薄膜封装层中，所述有机缓冲层比所述无机阻挡层在层数上少一层，所述无机阻挡层和有机缓冲层依次交替层叠制作形成，所述薄膜封装层的最下一层为无机阻挡层；
所述无机阻挡层的层数为两层以上，所述多个像素凹槽设于所述薄膜封装层中上下两侧具有有机缓冲层的第二层无机阻挡层上；
所述无机阻挡层通过化学气相沉积法制作形成；
所述步骤S2中，所述多个像素凹槽通过图案化工艺在所述无机阻挡层上制作形成，所述图案化工艺具体包括依次进行的光阻涂布步骤、曝光步骤、显影步骤、蚀刻步骤及去除光阻步骤。
所述无机阻挡层的层数为三层，所述多个像素凹槽设于所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层上，所述光提取层设置在所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层内。
所述步骤S2中，所述光提取材料为二氧化钛溶胶、氧化镁溶胶或者有 机溶液，所述光提取层通过涂布、蒸镀或喷涂的方式制作形成。
所述步骤S2中，所制作的平化膜与所述无机阻挡层的材料相同；
所述无机阻挡层的材料为氮化硅；
所述有机缓冲层的材料为碳氮化硅或碳氧化硅。
所述步骤S1还包括，在制作OLED阵列层之前，在所述基板上制作TFT层，所述OLED阵列层制作于所述TFT层上；
所述基板为柔性基板。
所述多个OLED器件包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，所述OLED器件为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层内的彩色滤光层。
本发明的有益效果：本发明提供的一种OLED显示面板，包括基板、设于基板上的OLED阵列层、设于基板和OLED阵列层上的薄膜封装层以及设于薄膜封装层内的光提取层，所述薄膜封装层包括无机阻挡层和有机缓冲层，其中一无机阻挡层远离基板的一侧对应于多个OLED器件的上方设有多个像素凹槽，光提取层对应设于该多个像素凹槽内，所述光提取层上覆盖有将其封闭在所述多个像素凹槽内的平化膜，以使其所在无机阻挡层的表面平整，通过将光提取层设于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，防止光提取层被水氧破坏，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。本发明提供的一种OLED显示面板的制作方法，将光提取层制作于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED显示面板的结构示意图；
图2为本发明的OLED显示面板的制作方法的流程示意图；
图3为本发明的OLED显示面板的制作方法的步骤S1的示意图；
图4-7为本发明的OLED显示面板的制作方法的步骤S2的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种OLED显示面板，包括基板100、设于所述基板100上的TFT层500、设于所述TFT层500上的OLED阵列层200、设于所述基板100和OLED阵列层200上且覆盖所述OLED阵列层200的薄膜封装层300以及设于所述薄膜封装层300内的光提取层400；所述光提取层400通过改变光的全反射角，使原来因全反射而局限在OLED显示面板中的光进行折射而提取出来，从而提高OLED显示面板的取光效率。
具体地，所述OLED阵列层200包括多个呈矩阵式分布的OLED器件210。
具体地，所述薄膜封装层300包括至少两层无机阻挡层310和至少一层有机缓冲层320，其中，所述有机缓冲层320比所述无机阻挡层310在层数上少一层，所述无机阻挡层310和有机缓冲层320交替层叠设置，所述薄膜封装层300的最下一层为无机阻挡层310。其中一所述无机阻挡层310远离所述基板100的一侧对应于所述多个OLED器件210的上方设有多个像素凹槽305。
具体地，所述光提取层400对应设于所述多个像素凹槽305内。所述光提取层400上还覆盖有将其封闭在所述多个像素凹槽305内的平化膜306，以使该设有所述多个像素凹槽305的无机阻挡层310表面平整，使该无机阻挡层310实现均匀的膜厚，并保证所述光提取层400是在薄膜封装层300的内部，也避免光提取层400对薄膜封装层300膜层之间的应力及封装效果产生破坏。
具体地，所述平化膜306与所述无机阻挡层310的材料相同
具体地，所述多个像素凹槽305可以设于最下一层的无机阻挡层310上，即光提取层400设于最下一层的无机阻挡层310内，但是这样会使工艺难度增加，因为该层无机阻挡层310最靠近OLED阵列层200，在光提取层400的制作过程中可能对OLED器件210有一定程度的损伤。所述多个像素凹槽305也可以设于最上一层的无机阻挡层310上，即光提取层400设于最上一层的无机阻挡层310内，但是这样光提取层400上方仅有平化膜306覆盖，光提取层400与水氧隔绝的效果较差。因此，所述无机阻挡层310优选设置为两层以上，所述多个像素凹槽305优选设置在最上一层和最下一层之间的即中间的无机阻挡层310上，即所述光提取层400设置 在中间的无机阻挡层310内。
在本实施例中，所述无机阻挡层310为三层，所述多个像素凹槽305设于按由下至上顺序的第二层无机阻挡层310上，即所述光提取层400设置在按由下至上顺序的第二层无机阻挡层310内。
具体地，所述光提取层400的制作材料为无机材料(例如二氧化钛溶胶、氧化镁溶胶)或者有机溶液。
具体地，所述无机阻挡层310的材料优选为阻隔水氧效果较好的氮化硅(SiNx)，但不仅限于氮化硅。
具体地，所述有机缓冲层320的材料为碳氮化硅(SiCN)或碳氧化硅(SiOC)。
具体地，所述OLED显示面板为柔性显示面板，所述基板100为柔性基板。
具体地，所述OLED显示面板通过红绿蓝(RGB)子像素分别发光的并列式(side-by-side)结构来实现彩色显示，所述多个OLED器件210包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，
所述OLED显示面板通过白色有机发光二极管(White Organic Light Emitting Diode，WOLED)和彩色滤光(Color Filter，CF)层叠加的串联型(tandem WOLED+CF)结构来实现彩色显示，所述OLED器件210为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层300内的彩色滤光层。
本发明的OLED显示面板，将光提取层400设于薄膜封装层300内，在不影响薄膜封装层300封装效果的同时，可提高光提取层400的稳定性，防止光提取层400被水氧破坏，避免现有技术将光提取层400置于OLED器件210内而对内部有机膜层的破坏，且可实现光提取层400与OLED器件210的一一对应。
基于上述的OLED显示面板，请参阅图2，本发明还提供一种OLED显示面板的制作方法，包括以下步骤：
步骤S1、如图3所示，提供基板100，在所述基板100上制作TFT层500，在所述TFT层500上制作OLED阵列层200，所述OLED阵列层200包括多个呈矩阵式分布的OLED器件210。
具体地，所述基板100为柔性基板。
步骤S2、如图4-7所示，在所述基板100和OLED阵列层200上制作薄膜封装层300，并在制作所述薄膜封装层300过程中，在所述薄膜封装层 300内制作光提取层400，得到如图1所示的OLED显示面板。
具体地，所述薄膜封装层300包括至少两层无机阻挡层310和至少一层有机缓冲层320，其中，所述有机缓冲层320比所述无机阻挡层310在层数上少一层，所述无机阻挡层310和有机缓冲层320交替层叠制作形成，所述薄膜封装层300的最下一层为无机阻挡层310，在所述薄膜封装层300制作过程中，在其中一所述无机阻挡层310制作形成后，在其远离所述基板100的一侧对应于所述多个OLED器件210的上方制作多个像素凹槽305，然后提供光提取材料，在所述多个像素凹槽305内对应加入光提取材料形成所述光提取层400，再在所述多个像素凹槽305内填充无机材料形成覆盖所述光提取层400的平化膜306，以使设有所述多个像素凹槽305的无机阻挡层310表面平整，使该无机阻挡层310实现均匀的膜厚，并保证所述光提取层400是在薄膜封装层300的内部，也避免光提取层400对薄膜封装层300膜层之间的应力及封装效果产生破坏。
具体地，所述多个像素凹槽305可以设于最下一层的无机阻挡层310上，即光提取层400设于最下一层的无机阻挡层310内，但是这样会使工艺难度增加，因为该层无机阻挡层310最靠近OLED阵列层200，在光提取层400的制作过程中可能对OLED器件210有一定程度的损伤；所述多个像素凹槽305也可以设于最上一层的无机阻挡层310上，即光提取层400设于最上一层的无机阻挡层310内，但是这样光提取层400上方仅有平化膜306覆盖，光提取层400与水氧隔绝的效果较差。因此，所述无机阻挡层310优选设置为两层以上，所述多个像素凹槽305优选设置在最上一层和最下一层之间的即中间的无机阻挡层310上，即所述光提取层400设置在中间的无机阻挡层310内。
在本实施例中，所述无机阻挡层310为三层，所述多个像素凹槽305设于按由下至上顺序的第二层无机阻挡层310上，即所述光提取层400设置在按由下至上顺序的第二层无机阻挡层310内。
具体地，所述步骤S2中，所述光提取材料为二氧化钛溶胶、氧化镁溶胶或者有机溶液，所述光提取层400通过涂布、蒸镀或喷涂的方式制作形成。
具体地，所述步骤S2中，所制作的平化膜306与所述无机阻挡层310的材料相同。
具体地，所述无机阻挡层310通过化学气相沉积法(Chemical Vapor Deposition，CVD)制作形成。
具体地，所述步骤S2中，所述多个像素凹槽305通过图案化工艺在所 述无机阻挡层310上制作形成，所述图案化工艺具体包括依次进行的光阻涂布步骤、曝光步骤、显影步骤、蚀刻步骤及去除光阻步骤。
具体地，所述无机阻挡层310的材料优选为阻隔水氧效果较好的氮化硅，但不仅限于氮化硅。
具体地，所述有机缓冲层320的材料为碳氮化硅或碳氧化硅。
具体地，所制作的OLED显示面板通过红绿蓝子像素分别发光的并列式结构来实现彩色显示，所述多个OLED器件210包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，
所述OLED显示面板通过白色有机发光二极管和彩色滤光层叠加的串联型结构来实现彩色显示，所述OLED器件210为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层300内的彩色滤光层。
本发明提供的一种OLED显示面板的制作方法，将光提取层400制作于薄膜封装层300内，在不影响薄膜封装层300封装效果的同时，可提高光提取层400的稳定性，避免现有技术将光提取层400置于OLED器件210内而对内部有机膜层的破坏，且可实现光提取层400与OLED器件210的一一对应。
综上所述，本发明提供的一种OLED显示面板，包括基板、设于基板上的OLED阵列层、设于基板和OLED阵列层上的薄膜封装层以及设于薄膜封装层内的光提取层，所述薄膜封装层包括无机阻挡层和有机缓冲层，其中一无机阻挡层远离基板的一侧对应于多个OLED器件的上方设有多个像素凹槽，光提取层对应设于该多个像素凹槽内，所述光提取层上覆盖有将其封闭在所述多个像素凹槽内的平化膜，以使其所在无机阻挡层的表面平整，通过将光提取层设于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，防止光提取层被水氧破坏，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。本发明提供的一种OLED显示面板的制作方法，将光提取层制作于薄膜封装层内，在不影响薄膜封装层封装效果的同时，可提高光提取层的稳定性，避免现有技术将光提取层置于OLED器件内而对内部有机膜层的破坏，且可实现光提取层与OLED器件的一一对应。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED显示面板，包括基板、设于所述基板上的OLED阵列层、设于所述基板和OLED阵列层上的薄膜封装层以及设于所述薄膜封装层内的光提取层；
    所述OLED阵列层包括多个呈矩阵式分布的OLED器件；
    所述薄膜封装层包括至少两层无机阻挡层和至少一层有机缓冲层，其中一所述无机阻挡层远离所述基板的一侧对应于所述多个OLED器件的上方设有多个像素凹槽；
    所述光提取层对应设于所述多个像素凹槽内；
    所述光提取层上覆盖有将其封闭在所述多个像素凹槽内的平化膜，以使设有所述多个像素凹槽的无机阻挡层表面平整。
  2. 如权利要求1所述的OLED显示面板，其中，所述薄膜封装层中，所述有机缓冲层比所述无机阻挡层在层数上少一层，所述无机阻挡层和有机缓冲层交替层叠设置，所述薄膜封装层的最下一层为无机阻挡层；
    所述无机阻挡层的层数为两层以上，所述多个像素凹槽设于所述薄膜封装层中上下两侧具有有机缓冲层的无机阻挡层上。
  3. 如权利要求2所述的OLED显示面板，其中，所述无机阻挡层的层数为三层，所述多个像素凹槽设于所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层上，所述光提取层设置在所述薄膜封装层中按由下至上顺序的第二层的无机阻挡层内。
  4. 如权利要求1所述的OLED显示面板，其中，所述光提取层的制作材料为二氧化钛溶胶、氧化镁溶胶或者有机溶液；
    所述平化膜与所述无机阻挡层的材料相同；
    所述无机阻挡层的材料为氮化硅；
    所述有机缓冲层的材料为碳氮化硅或碳氧化硅。
  5. 如权利要求1所述的OLED显示面板，还包括设于所述基板和OLED阵列层之间的TFT层，所述OLED阵列层设于所述TFT层上；
    所述基板为柔性基板；
    所述多个OLED器件包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，所述OLED器件为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层内的彩色滤光层。
  6. 一种OLED显示面板的制作方法，包括以下步骤：
    步骤S1、提供基板，在所述基板上形成OLED阵列层；所述OLED阵列层包括多个呈矩阵式分布的OLED器件；
    步骤S2、在所述基板和OLED阵列层上制作薄膜封装层，并在制作所述薄膜封装层过程中，在所述薄膜封装层内制作光提取层；
    所述薄膜封装层包括至少两层无机阻挡层和至少一层有机缓冲层，在所述薄膜封装层制作过程中，在其中一所述无机阻挡层远离所述基板的一侧对应于所述多个OLED器件的上方制作多个像素凹槽，然后提供光提取材料，在所述多个像素凹槽内对应加入光提取材料形成所述光提取层，再在所述多个像素凹槽内填充无机材料形成覆盖所述光提取层的平化膜，以使设有所述多个像素凹槽的无机阻挡层表面平整。
  7. 如权利要求6所述的OLED显示面板的制作方法，其中，所述薄膜封装层中，所述有机缓冲层比所述无机阻挡层在层数上少一层，所述无机阻挡层和有机缓冲层依次交替层叠制作形成，所述薄膜封装层的最下一层为无机阻挡层；
    所述无机阻挡层的层数为两层以上，所述多个像素凹槽设于所述薄膜封装层中上下两侧具有有机缓冲层的第二层无机阻挡层上；
    所述无机阻挡层通过化学气相沉积法制作形成；
    所述步骤S2中，所述多个像素凹槽通过图案化工艺在所述无机阻挡层上制作形成，所述图案化工艺具体包括依次进行的光阻涂布步骤、曝光步骤、显影步骤、蚀刻步骤及去除光阻步骤。
  8. 如权利要求7所述的OLED显示面板的制作方法，其中，所述无机阻挡层的层数为三层，所述多个像素凹槽设于按由下至上顺序的第二层的无机阻挡层上，所述光提取层设置在按由下至上顺序的第二层的无机阻挡层内。
  9. 如权利要求6所述的OLED显示面板的制作方法，其中，所述步骤S2中，所述光提取材料为二氧化钛溶胶、氧化镁溶胶或者有机溶液，所述光提取层通过涂布、蒸镀或喷涂的方式制作形成；
    所述步骤S2中，所制作的平化膜与所述无机阻挡层的材料相同；
    所述无机阻挡层的材料为氮化硅；
    所述有机缓冲层的材料为碳氮化硅或碳氧化硅。
  10. 如权利要求6所述的OLED显示面板的制作方法，其中，所述步骤S1还包括，在制作OLED阵列层之前，在所述基板上制作TFT层，所述OLED阵列层制作于所述TFT层上；
    所述基板为柔性基板；
    所述多个OLED器件包括多个红色OLED器件、多个绿色OLED器件及多个蓝色OLED器件；或者，所述OLED器件为白色OLED器件，所述OLED显示面板还包括设于所述薄膜封装层内的彩色滤光层。
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