WO2020224141A1 - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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Publication number
WO2020224141A1
WO2020224141A1 PCT/CN2019/104682 CN2019104682W WO2020224141A1 WO 2020224141 A1 WO2020224141 A1 WO 2020224141A1 CN 2019104682 W CN2019104682 W CN 2019104682W WO 2020224141 A1 WO2020224141 A1 WO 2020224141A1
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WO
WIPO (PCT)
Prior art keywords
layer
light
display panel
emitting
transmitting
Prior art date
Application number
PCT/CN2019/104682
Other languages
English (en)
French (fr)
Inventor
李祥龙
井口真介
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Priority to US16/617,511 priority Critical patent/US20210336236A1/en
Publication of WO2020224141A1 publication Critical patent/WO2020224141A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • the application relates to the display field, and in particular to a display panel and a manufacturing method thereof.
  • OLED Organic Light-Emitting Diode
  • the light-emitting layer is usually arranged between the total reflection and the semi-reflective structure to form a microcavity effect, so as to improve the luminous efficiency of the light-emitting device.
  • the microcavity effect needs to be formed in a thicker device, the thickness of the OLED light-emitting layer is relatively thick.
  • the cost of OLED display panels is relatively high.
  • the present application provides a display panel and a manufacturing method thereof to reduce the production cost of the existing display panel.
  • the present application provides a manufacturing method of a display panel, which includes:
  • the manufacturing method of the display panel further includes:
  • a light-transmitting layer is formed between the substrate and the cathode layer.
  • the light-transmitting layer is located between the light-emitting layer and the anode layer.
  • the light-transmitting layer is located between the light-emitting layer and the cathode layer.
  • the light-transmitting layer is located between the substrate and the anode layer.
  • the manufacturing method of the display panel further includes:
  • the reflective layer is composed of a total reflection material.
  • the light-transmitting layer is located between the light-emitting layer and the anode layer.
  • the light-transmitting layer is located between the light-emitting layer and the cathode layer.
  • the light-transmitting layer is located between the reflective layer and the anode layer.
  • the light-transmitting layer includes one or more combinations of inorganic oxide, inorganic nitride, or organic polymer.
  • the application also proposes a display panel, which includes a substrate, a light-emitting device layer on the substrate, and an encapsulation layer on the light-emitting device layer;
  • the light-emitting device layer includes an anode layer, a light-emitting layer on the anode layer, a cathode layer on the light-emitting layer, and
  • a light-transmitting layer located between the cathode layer and the substrate.
  • the light-transmitting layer is located between the light-emitting layer and the anode layer.
  • the light-transmitting layer is located between the light-emitting layer and the cathode layer.
  • the light-transmitting layer is located between the substrate and the anode layer.
  • the display panel further includes a reflective layer on the surface of the substrate;
  • the reflective layer is composed of a total reflection material.
  • the light-transmitting layer is located between the light-emitting layer and the anode layer.
  • the light-transmitting layer is located between the light-emitting layer and the cathode layer.
  • the light-transmitting layer is located between the reflective layer and the anode layer.
  • the light-transmitting layer includes one or more combinations of inorganic oxide, inorganic nitride, or organic polymer.
  • the display panel includes a substrate, a light-emitting device layer, and an encapsulation layer.
  • the light-emitting device layer includes an anode layer, a light-emitting layer, a cathode layer, and a light-transmitting layer located between the cathode layer and the substrate.
  • a light-transmitting layer is provided in the light-emitting device layer to replace part of the light-emitting layer, and the thickness of the light-emitting layer is reduced, the amount of the light-emitting layer material is reduced, and the production cost is reduced.
  • FIG. 1 is a step diagram of a manufacturing method of a display panel of this application
  • Figure 2 is a structural diagram of an existing display panel
  • FIG. 3 is the first structure diagram of the display panel of this application.
  • Figure 4 is a second structure diagram of the display panel of this application.
  • Figure 5 is a third structural diagram of the display panel of this application.
  • Fig. 6 is a fourth structural diagram of the display panel of this application.
  • FIG. 7 is a fifth structure diagram of the display panel of this application.
  • FIG. 8 is a sixth structure diagram of the display panel of this application.
  • FIG. 9 is a seventh structure diagram of the display panel of this application.
  • FIG. 10 is an eighth structure diagram of the display panel of this application.
  • FIG. 1 is a step diagram of a manufacturing method of a display panel of the present application.
  • FIG. 2 is a structural diagram of an existing display panel.
  • the manufacturing method of the display panel 100 includes:
  • the substrate 10 may be an array substrate.
  • the substrate 10 includes a substrate and a thin film transistor layer on the substrate.
  • the raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer includes a plurality of thin film transistor units.
  • the thin film transistor unit may be an etching barrier type, a back channel etching type, a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
  • This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
  • the anode layer 20 is formed on the flat layer.
  • the anode layer 20 is patterned to form a plurality of anodes.
  • the anode layer 20 is mainly used to provide holes for absorbing electrons.
  • the light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
  • the light-emitting units correspond to the anodes one to one.
  • the light-emitting layer 30 includes organic light-emitting materials, which are organic semiconductors. It has a special energy band structure, which can emit photons of a certain wavelength after absorbing electrons migrated from the anode, and these photons enter our eyes to be the color we see.
  • the cathode layer covers the light-emitting layer 30.
  • the cathode layer is used to provide electrons absorbed by the holes.
  • the encapsulation layer 50 may be a thin-film encapsulation layer, which is mainly used to block water and oxygen, and prevent the organic light-emitting layer 30 from being corroded by external water vapor.
  • the encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer.
  • the organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
  • the method further includes the following steps:
  • a light-transmitting layer 60 is formed between the substrate 10 and the cathode layer.
  • the anode layer 20 may be a transparent or non-transparent electrode.
  • a reflective film layer 70 is further provided between the anode layer 20 and the substrate 10 or in the substrate 10 to reflect the light generated by the light emitting layer 30 from the top.
  • FIG. 3 is a first structure diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the substrate 10. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the anode layer 20.
  • FIG. 4 is a second structure diagram of the display panel 100 of this application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • FIG. 5 is a third structural diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • a reflective film layer 70 needs to be provided on one side of the light emitting device.
  • the reflective film layer 70 in the foregoing embodiment may be located in the substrate 10, that is, a reflective layer 80 is provided in a certain film structure in the substrate 10, for example, the reflective layer 80 is provided on a thicker flat layer. Wait inside.
  • the total reflection of the reflective film layer 70 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30. Under the premise of the same luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • FIG. 6 is a fourth structural diagram of the display panel 100 of the present application.
  • FIG. 7 is a fifth structure diagram of the display panel 100 of the present application.
  • FIG. 8 is a sixth structural diagram of the display panel 100 of the present application.
  • the manufacturing method of the display panel 100 further includes the following steps:
  • a reflective layer 80 is formed on the surface of the substrate 10.
  • the reflective layer 80 is made of a totally reflective material and can be used as a reflective electrode.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the reflective layer 80. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the anode layer 20.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • the total reflection of the reflective layer 80 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30, and achieves the same Under the premise of the luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • the anode layer 20 may be a transparent electrode.
  • the cathode layer may be a semi-transparent electrode.
  • Part of the light emitted by the light-emitting layer 30 completely passes through the anode layer 20 when passing through the anode layer 20, and is totally reflected to the cathode layer through the reflective layer 80 or the reflective film layer 70.
  • the transparent anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) ) Or at least one of aluminum zinc oxide (AZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • In2O3 indium oxide
  • IGO indium gallium oxide
  • AZO aluminum zinc oxide
  • FIG. 9 is a seventh structural diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • FIG. 10 is an eighth structure diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • the anode layer 20 may be a non-transparent electrode.
  • the anode layer 20 is made of a total reflection material.
  • the cathode layer may be a semi-transparent electrode, and the cathode layer is composed of a semi-reflective material.
  • the total reflection of the anode layer 20 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30. Under the premise of the luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • the light-transmitting layer 60 is made of a material with high light-transmittance, and the light-transmitting layer 60 may include one or more of inorganic oxides, inorganic nitrides, or organic polymers. combination.
  • the inorganic oxide may be silicon oxide (SiOx)
  • the inorganic nitride may be silicon nitride (SiNx)
  • the organic polymer may be polymethylmethacrylate (PMMA), polypropylene (PP), and the like. Initiator/terminator and other additives can be added to the organic polymer.
  • the light-transmitting layer 60 when the light-transmitting layer 60 is located between the anode layer 20 and the light-emitting layer 30, the light-transmitting layer 60 is made of a material with high conductivity and high work function to ensure The luminous efficiency of the light-emitting layer 30.
  • the light-transmitting layer 60 is located between the cathode layer and the light-emitting layer 30, the light-transmitting layer 60 is made of a material with high conductivity and low work function to ensure the luminous efficiency of the light-emitting layer 30.
  • the cathode layer can be used as a total reflection layer 80, and the anode layer 20, the reflective layer 80, or the reflective film layer 70 can be used as the semi-reflective layer 80.
  • the specific manufacturing method is the same as or similar to that of the top light, and will not be repeated here.
  • the light-transmitting layer 60 is provided in the light-emitting device layer to replace part of the light-emitting layer 30, and the thickness of the light-emitting layer 30 is reduced, the amount of materials used for the light-emitting layer 30 is reduced, and the production cost is reduced.
  • the present application also proposes a display panel 100, which includes a substrate 10, a light-emitting device layer on the substrate 10, and an encapsulation layer 50 on the light-emitting device layer. .
  • the substrate 10 includes a substrate and a thin film transistor layer on the substrate.
  • the raw material of the substrate may be one of a glass substrate, a quartz substrate, a resin substrate, and the like.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer includes a plurality of thin film transistor units.
  • the thin film transistor unit may be an etching barrier type, a back channel etching type, a top gate thin film transistor type, etc., which is not specifically limited in this embodiment.
  • This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit may include: a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, an inter-insulating layer, a source and drain electrode, a passivation layer, and a flat layer.
  • the light emitting device layer includes an anode layer 20, a light emitting layer 30 on the anode layer 20, and a cathode layer on the light emitting layer 30.
  • the anode layer 20 is formed on the flat layer.
  • the anode layer 20 is patterned to form a plurality of anodes.
  • the anode layer 20 is mainly used to provide holes for absorbing electrons.
  • the light-emitting layer 30 is divided into a plurality of light-emitting units by a pixel definition layer (not shown).
  • the light-emitting units correspond to the anodes one to one.
  • the light-emitting layer 30 includes organic light-emitting materials, which are organic semiconductors. It has a special energy band structure, which can emit photons of a certain wavelength after absorbing electrons migrated from the anode, and these photons enter our eyes to be the color we see.
  • the cathode layer covers the light emitting layer 30.
  • the cathode layer is used to provide electrons absorbed by the holes.
  • the encapsulation layer 50 may be a thin-film encapsulation layer 50, which is mainly used to block water and oxygen, and prevent external moisture from corroding the organic light-emitting layer 30.
  • the encapsulation layer 50 may be formed by alternately stacking at least one organic layer and at least one inorganic layer.
  • the organic layer is usually located in the middle of the encapsulation layer 50, and the inorganic layer is located on both sides of the encapsulation layer 50, wrapping the organic layer in the middle.
  • the display panel 100 further includes a light-transmitting layer 60 located between the cathode layer and the substrate 10.
  • the anode layer 20 may be a transparent or non-transparent electrode.
  • a reflective film layer 70 is further provided between the anode layer 20 and the substrate 10 or in the substrate 10 to reflect the light generated by the light emitting layer 30 from the top.
  • FIG. 3 is a first structure diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the substrate 10. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the anode layer 20.
  • FIG. 4 is a second structure diagram of the display panel 100 of this application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • FIG. 5 is a third structural diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • a reflective film layer 70 needs to be provided on one side of the light emitting device.
  • the reflective film layer 70 in the foregoing embodiment may be located in the substrate 10, that is, a reflective layer 80 is provided in a certain film structure in the substrate 10, for example, the reflective layer 80 is provided on a thicker flat layer. Wait inside.
  • the total reflection of the reflective film layer 70 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30. Under the premise of the same luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • FIG. 6 is a fourth structural diagram of the display panel 100 of the present application.
  • FIG. 7 is a fifth structure diagram of the display panel 100 of the present application.
  • FIG. 8 is a sixth structural diagram of the display panel 100 of the present application.
  • the manufacturing method of the display panel 100 further includes the following steps:
  • a reflective layer 80 is formed on the surface of the substrate 10.
  • the reflective layer 80 is made of a totally reflective material and can be used as a reflective electrode.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the reflective layer 80. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the anode layer 20.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • the total reflection of the reflective layer 80 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30, and achieves the same Under the premise of the luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • the anode layer 20 may be a transparent electrode.
  • the cathode layer may be a semi-transparent electrode.
  • Part of the light emitted by the light-emitting layer 30 completely passes through the anode layer 20 when passing through the anode layer 20, and is totally reflected to the cathode layer through the reflective layer 80 or the reflective film layer 70.
  • the transparent anode layer 20 may be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium oxide (In2O3), indium gallium oxide (IGO) ) Or at least one of aluminum zinc oxide (AZO).
  • ITO indium tin oxide
  • IZO indium zinc oxide
  • ZnO zinc oxide
  • In2O3 indium oxide
  • IGO indium gallium oxide
  • AZO aluminum zinc oxide
  • FIG. 9 is a seventh structural diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the anode layer 20 and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the light-emitting layer 30.
  • FIG. 10 is an eighth structure diagram of the display panel 100 of the present application.
  • the light-transmitting layer 60 may be located between the cathode layer and the light-emitting layer 30. That is, the preparation of the light-transmitting layer 60 is performed before the preparation of the cathode layer.
  • the anode layer 20 may be a non-transparent electrode.
  • the anode layer 20 is made of a total reflection material.
  • the cathode layer may be a semi-transparent electrode, and the cathode layer is composed of a semi-reflective material.
  • the total reflection of the anode layer 20 and the semi-reflection of the cathode layer form a microcavity effect.
  • the addition of the light-transmitting layer 60 replaces the original part of the light-emitting layer 30. Under the premise of the luminous effect, the materials of the luminescent layer 30 are reduced, and the production cost is reduced.
  • the light-transmitting layer 60 is made of a material with high light-transmittance, and the light-transmitting layer 60 may include one or more of inorganic oxides, inorganic nitrides, or organic polymers. combination.
  • the inorganic oxide may be silicon oxide (SiOx)
  • the inorganic nitride may be silicon nitride (SiNx)
  • the organic polymer may be polymethylmethacrylate (PMMA), polypropylene (PP), and the like. Initiator/terminator and other additives can be added to the organic polymer.
  • the light-transmitting layer 60 when the light-transmitting layer 60 is located between the anode layer 20 and the light-emitting layer 30, the light-transmitting layer 60 is made of a material with high conductivity and high work function to ensure The luminous efficiency of the light-emitting layer 30.
  • the light-transmitting layer 60 is located between the cathode layer and the light-emitting layer 30, the light-transmitting layer 60 is made of a material with high conductivity and low work function to ensure the luminous efficiency of the light-emitting layer 30.
  • the cathode layer can be used as a total reflection layer 80, and the anode layer 20, the reflective layer 80, or the reflective film layer 70 can be used as the semi-reflective layer 80.
  • the specific manufacturing method is the same as or similar to that of the top light, and will not be repeated here.
  • the light-transmitting layer 60 is provided in the light-emitting device layer to replace part of the light-emitting layer 30, and the thickness of the light-emitting layer 30 is reduced, the amount of materials used for the light-emitting layer 30 is reduced, and the production cost is reduced.
  • the display panel includes a substrate, a light-emitting device layer, and an encapsulation layer.
  • the light-emitting device layer includes an anode layer, a light-emitting layer, a cathode layer, and a light-transmitting layer located between the cathode layer and the substrate.
  • a light-transmitting layer is provided in the light-emitting device layer to replace part of the light-emitting layer, and the thickness of the light-emitting layer is reduced, the amount of the light-emitting layer material is reduced, and the production cost is reduced.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种显示面板及其制作方法，该显示面板包括衬底（10）、发光器件层、及封装层（50）。该发光器件层包括阳极层（20）、发光层（30）、阴极层（40）、以及位于阴极层（40）与衬底（10）之间的透光层（60）。

Description

显示面板及其制作方法 技术领域
本申请涉及显示领域，特别涉及一种显示面板及其制作方法。
 背景技术
在平板显示技术中，有机发光二极管（Organic Light-Emitting Diode，OLED）显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，逐渐成为继液晶显示器后的第三代显示技术。
在现有的OLED器件的制备过程中，通常将发光层设置于全反射和半反射结构之间形成微腔效应，以提高发光器件的发光效率。但由于微腔效应需要在较厚的器件中形成，因此OLED发光层的厚度较厚。而由于OLED发光材料的价格昂贵，导致OLED显示面板的成本较高。
因此，目前亟需一种显示面板以降低产品的生产成本。
 技术问题
本申请提供了一种显示面板及其制作方法，以降低现有显示面板的生产成本。
 技术解决方案
本申请提供一种显示面板的制作方法，其包括：
S10、提供一衬底，在所述衬底上形成阳极层；
S20、在所述阳极层形成发光层；
S30、在所述发光层上形成阴极层；
S40、在所述阴极层上形成封装层；
其中，所述显示面板的制作方法还包括：
在所述衬底与所述阴极层之间形成透光层。
在本申请的制作方法中，
所述透光层位于所述发光层与所述阳极层之间。
在本申请的制作方法中，
所述透光层位于所述发光层与所述阴极层之间。
在本申请的制作方法中，
所述透光层位于所述衬底与所述阳极层之间。
在本申请的制作方法中，
所述显示面板的制作方法还包括：
在所述衬底表面形成反射层；
其中，所述反射层由全反射材料构成。
在本申请的制作方法中，
所述透光层位于所述发光层与所述阳极层之间。
在本申请的制作方法中，
所述透光层位于所述发光层与所述阴极层之间。
在本申请的制作方法中，
所述透光层位于所述反射层与所述阳极层之间。
在本申请的制作方法中，所述透光层包括无机氧化物、无机氮化物或有机聚合物中的一种或一种以上的组合物。
本申请还提出了一种显示面板，其包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；
所述发光器件层包括阳极层、位于所述阳极层上的发光层、位于所述发光层上的阴极层以及
位于所述阴极层与所述衬底之间的透光层。
在本申请的显示面板中，
所述透光层位于所述发光层与所述阳极层之间。
在本申请的显示面板中，
所述透光层位于所述发光层与所述阴极层之间。
在本申请的显示面板中，
所述透光层位于所述衬底与所述阳极层之间。
在本申请的显示面板中，
所述显示面板还包括位于所述衬底表面的反射层；
其中，所述反射层由全反射材料构成。
在本申请的显示面板中，
所述透光层位于所述发光层与所述阳极层之间。
在本申请的显示面板中，
所述透光层位于所述发光层与所述阴极层之间。
在本申请的显示面板中，
所述透光层位于所述反射层与所述阳极层之间。
在本申请的显示面板中，所述透光层包括无机氧化物、无机氮化物或有机聚合物中的一种或一种以上的组合物。
 有益效果
本申请提出了一种显示面板及其制作方法，所述显示面板包括衬底、发光器件层、及封装层。所述发光器件层包括阳极层、发光层、阴极层、以及位于阴极层与衬底之间的透光层。本申请通过在发光器件层中设置透光层，以替代部分发光层，并降低发光层的厚度，减少了发光层材料的用量，降低了生产成本。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请显示面板制作方法的步骤图；
图2为现有显示面板的结构图；
图3为本申请显示面板的第一种结构图；
图4为本申请显示面板的第二种结构图；
图5为本申请显示面板的第三种结构图；
图6为本申请显示面板的第四种结构图；
图7为本申请显示面板的第五种结构图；
图8为本申请显示面板的第六种结构图；
图9为本申请显示面板的第七种结构图；
图10为本申请显示面板的第八种结构图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
请参阅图1，图1为本申请显示面板制作方法的步骤图。
请参阅图2，图2为现有显示面板的结构图。
所述显示面板100制作方法包括：
S10、提供一衬底10，在所述衬底10上形成阳极层20；
请参阅图2，所述衬底10可以为阵列基板。
所述衬底10包括基板和位于所述基板上的薄膜晶体管层。
所述基板的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。当所述基板为柔性基板时，所述柔性基板的材料可以为PI（聚酰亚胺）。
所述薄膜晶体管层包括多个薄膜晶体管单元。所述薄膜晶体管单元可以为蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等，本实施例具体没有限制。
本申请以顶栅薄膜晶体管型为例进行说明。
例如，所述薄膜晶体管单元可以包括：遮光层、缓冲层、有源层、栅绝缘层、栅极、间绝缘层、源漏极、钝化层及平坦层。
所述阳极层20形成于所述平坦层上。
所述阳极层20通过图案化处理形成多个阳极。
所述阳极层20主要用于提供吸收电子的空穴。
S20、在所述阳极层20形成发光层30；
请参阅图2，所述发光层30被像素定义层（未画出）分割成多个发光单元。所述发光单元与所述阳极一一对应。
所述发光层30包括有机发光材料，该种材料属于有机半导体。其具有特殊的能带结构，可以在吸收所述阳极迁移过来的电子后，再散发出来一定波长的光子，而这些光子进入我们眼睛就是我们看到的色彩。
S30、在所述发光层30上形成阴极层40；
请参阅图2，所述阴极层覆盖所述发光层30。所述阴极层用于提供被所述空穴吸收的电子。
S40、在所述阴极层上形成封装层50；
请参阅图2，所述封装层50可以为薄膜封装层，主要用于阻水阻氧，防止外部水汽对有机发光层30的侵蚀。所述封装层50可以由至少一有机层与至少一无机层交错层叠而成。有机层通常位于所述封装层50的中间，无机层位于所述封装层50的两侧，将有机层包裹在中间。
在本申请的显示面板100制作方法中，还包括步骤：
在所述衬底10与所述阴极层之间形成透光层60。
当所述显示面板100为顶发光的OLED器件时，所述阳极层20可以为透明或非透明电极。
若所述阳极层20为透明电极时，则在所述阳极层20与衬底10之间或所述衬底10内还设置有反射薄膜层70，将发光层30产生的光线从顶部反射出去。
请参阅图3，图3为本申请显示面板100的第一种结构图。
请参阅图3，所述透光层60可以位于所述阳极层20与所述衬底10之间。即在制备所述阳极层20之前进行所述透光层60的制备。
请参阅图4，图4为本申请显示面板100的第二种结构图。
请参阅图4，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图5，图5为本申请显示面板100的第三种结构图。
请参阅图5，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图3~5中，为了使发光器件达到微腔效应，则需要在发光器件一侧设置一反射薄膜层70。上述实施例中的反射薄膜层70可以位于所述衬底10内，即该衬底10内某一膜层结构内设置有一反射层80，例如将所述反射层80设置于较厚的平坦层内等。
在图3~5中，所述反射薄膜层70的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
请参阅图6，图6为本申请显示面板100的第四种结构图。
请参阅图7，图7为本申请显示面板100的第五种结构图。
请参阅图8，图8为本申请显示面板100的第六种结构图。
请参阅图6~7，所述显示面板100制作方法中，还包括步骤：
在所述衬底10的表面形成一反射层80。
所述反射层80由全反射材料构成，可以作为反射电极。
请参阅图6，所述透光层60可以位于所述阳极层20与所述反射层80之间。即在制备所述阳极层20之前进行所述透光层60的制备。
请参阅图7，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图8，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图6~8中，所述反射层80的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
在图6~8中，所述阳极层20可以为透明电极。所述阴极层可以为半透明电极。
所述发光层30发出的部分光线经过所述阳极层20时完全透过所述阳极层20，并经过所述反射层80或所述反射薄膜层70全反射至所述阴极层。
在图3~8中，透明的所述阳极层20材料可以为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。
请参阅图9，图9为本申请显示面板100的第七种结构图。
请参阅图9，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图10，图10为本申请显示面板100的第八种结构图。
请参阅图10，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图9~10中，所述阳极层20可以为非透明电极。所述阳极层20由全反射材料构成。所述阴极层可以为半透明电极，所述阴极层由半反射材料构成。
在图9~10中，所述阳极层20的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
在图3~10中，所述透光层60由高透光率材料构成，所述透光层60可以包括无机氧化物、无机氮化物或有机聚合物等中的一种或一种以上的组合物。
例如，无机氧化物可以为氧化硅（SiOx）、无机氮化物可以为氮化硅（SiNx）、有机聚合物可以为聚甲基丙烯酸甲酯(PMMA)，聚丙烯(PP)等。有机聚合物中可以加入引发剂/终止剂等添加剂。
在上述实施例中，当所述透光层60位于所述阳极层20与所述发光层30之间时，所述透光层60由具有高导电性能和高功函数的材料制备，以保证发光层30的发光效率。当所述透光层60位于所述阴极层与所述发光层30之间时，所述透光层60由具有高导电性能和低功函数的材料制备以保证发光层30的发光效率。
同理，当所述显示面板100为底发光的OLED器件时，所述阴极层可以作为全反射层80，所述阳极层20、反射层80或反射薄膜层70可以作为半反射层80，同样可以形成微腔效应。具体制作方法与顶发光相同或相似，此处不再赘述。
本申请通过在发光器件层中设置透光层60，以替代部分发光层30，并降低发光层30的厚度，减少了发光层30材料的用量，降低了生产成本。
请参阅图2，本申请还提出了一种显示面板100，所述显示面板100包括衬底10、位于所述衬底10上的发光器件层、及位于所述发光器件层上的封装层50。
所述衬底10包括基板和位于所述基板上的薄膜晶体管层。
所述基板的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。当所述基板为柔性基板时，所述柔性基板的材料可以为PI（聚酰亚胺）。
所述薄膜晶体管层包括多个薄膜晶体管单元。所述薄膜晶体管单元可以为蚀刻阻挡层型、背沟道蚀刻型或顶栅薄膜晶体管型等，本实施例具体没有限制。
本申请以顶栅薄膜晶体管型为例进行说明。
例如，所述薄膜晶体管单元可以包括：遮光层、缓冲层、有源层、栅绝缘层、栅极、间绝缘层、源漏极、钝化层及平坦层。
所述发光器件层包括阳极层20、位于所述阳极层20上的发光层30、位于所述发光层30上的阴极层。
所述阳极层20形成于所述平坦层上。
所述阳极层20通过图案化处理形成多个阳极。
所述阳极层20主要用于提供吸收电子的空穴。
所述发光层30被像素定义层（未画出）分割成多个发光单元。所述发光单元与所述阳极一一对应。
所述发光层30包括有机发光材料，该种材料属于有机半导体。其具有特殊的能带结构，可以在吸收所述阳极迁移过来的电子后，再散发出来一定波长的光子，而这些光子进入我们眼睛就是我们看到的色彩。
所述阴极层覆盖所述发光层30。所述阴极层用于提供被所述空穴吸收的电子。
所述封装层50可以为薄膜封装层50，主要用于阻水阻氧，防止外部水汽对有机发光层30的侵蚀。所述封装层50可以由至少一有机层与至少一无机层交错层叠而成。有机层通常位于所述封装层50的中间，无机层位于所述封装层50的两侧，将有机层包裹在中间。
请参阅图3，所述显示面板100还包括位于所述阴极层与所述衬底10之间的透光层60。
当所述显示面板100为顶发光的OLED器件时，所述阳极层20可以为透明或非透明电极。
若所述阳极层20为透明电极时，则在所述阳极层20与衬底10之间或所述衬底10内还设置有反射薄膜层70，将发光层30产生的光线从顶部反射出去。
请参阅图3，图3为本申请显示面板100的第一种结构图。
请参阅图3，所述透光层60可以位于所述阳极层20与所述衬底10之间。即在制备所述阳极层20之前进行所述透光层60的制备。
请参阅图4，图4为本申请显示面板100的第二种结构图。
请参阅图4，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图5，图5为本申请显示面板100的第三种结构图。
请参阅图5，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图3~5中，为了使发光器件达到微腔效应，则需要在发光器件一侧设置一反射薄膜层70。上述实施例中的反射薄膜层70可以位于所述衬底10内，即该衬底10内某一膜层结构内设置有一反射层80，例如将所述反射层80设置于较厚的平坦层内等。
在图3~5中，所述反射薄膜层70的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
请参阅图6，图6为本申请显示面板100的第四种结构图。
请参阅图7，图7为本申请显示面板100的第五种结构图。
请参阅图8，图8为本申请显示面板100的第六种结构图。
请参阅图6~7，所述显示面板100制作方法中，还包括步骤：
在所述衬底10的表面形成一反射层80。
所述反射层80由全反射材料构成，可以作为反射电极。
请参阅图6，所述透光层60可以位于所述阳极层20与所述反射层80之间。即在制备所述阳极层20之前进行所述透光层60的制备。
请参阅图7，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图8，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图6~8中，所述反射层80的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
在图6~8中，所述阳极层20可以为透明电极。所述阴极层可以为半透明电极。
所述发光层30发出的部分光线经过所述阳极层20时完全透过所述阳极层20，并经过所述反射层80或所述反射薄膜层70全反射至所述阴极层。
在图3~8中，透明的所述阳极层20材料可以为铟锡氧化物（ITO）、氧化铟锌（IZO）、氧化锌（ZnO）、氧化铟（In2O3）、铟镓氧化物（IGO）或氧化锌铝（AZO）中的至少一种。
请参阅图9，图9为本申请显示面板100的第七种结构图。
请参阅图9，所述透光层60可以位于所述阳极层20与所述发光层30之间。即在制备所述发光层30之前进行所述透光层60的制备。
请参阅图10，图10为本申请显示面板100的第八种结构图。
请参阅图10，所述透光层60可以位于所述阴极层与所述发光层30之间。即在制备所述阴极层之前进行所述透光层60的制备。
在图9~10中，所述阳极层20可以为非透明电极。所述阳极层20由全反射材料构成。所述阴极层可以为半透明电极，所述阴极层由半反射材料构成。
在图9~10中，所述阳极层20的全反射与所述阴极层的半反射形成微腔效应，所述透光层60的加入替代了原有部分所述发光层30，在达到相同发光效果的前提下，减少了所述发光层30材料的用料，降低了生产成本。
在图3~10中，所述透光层60由高透光率材料构成，所述透光层60可以包括无机氧化物、无机氮化物或有机聚合物等中的一种或一种以上的组合物。
例如，无机氧化物可以为氧化硅（SiOx）、无机氮化物可以为氮化硅（SiNx）、有机聚合物可以为聚甲基丙烯酸甲酯(PMMA)，聚丙烯(PP)等。有机聚合物中可以加入引发剂/终止剂等添加剂。
在上述实施例中，当所述透光层60位于所述阳极层20与所述发光层30之间时，所述透光层60由具有高导电性能和高功函数的材料制备，以保证发光层30的发光效率。当所述透光层60位于所述阴极层与所述发光层30之间时，所述透光层60由具有高导电性能和低功函数的材料制备以保证发光层30的发光效率。
同理，当所述显示面板100为底发光的OLED器件时，所述阴极层可以作为全反射层80，所述阳极层20、反射层80或反射薄膜层70可以作为半反射层80，同样可以形成微腔效应。具体制作方法与顶发光相同或相似，此处不再赘述。
本申请通过在发光器件层中设置透光层60，以替代部分发光层30，并降低发光层30的厚度，减少了发光层30材料的用量，降低了生产成本。
本申请提出了一种显示面板及其制作方法，所述显示面板包括衬底、发光器件层、及封装层。所述发光器件层包括阳极层、发光层、阴极层、以及位于阴极层与衬底之间的透光层。本申请通过在发光器件层中设置透光层，以替代部分发光层，并降低发光层的厚度，减少了发光层材料的用量，降低了生产成本。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (18)

  1. 一种显示面板的制作方法，其包括：
    S10、提供一衬底，在所述衬底上形成阳极层；
    S20、在所述阳极层形成发光层；
    S30、在所述发光层上形成阴极层；
    S40、在所述阴极层上形成封装层；
    其中，所述显示面板的制作方法还包括：
    在所述衬底与所述阴极层之间形成透光层。
  2. 根据权利要求1所述的制作方法，其中，
    所述透光层位于所述发光层与所述阳极层之间。
  3. 根据权利要求1所述的制作方法，其中，
    所述透光层位于所述发光层与所述阴极层之间。
  4. 根据权利要求1所述的制作方法，其中，
    所述透光层位于所述衬底与所述阳极层之间。
  5. 根据权利要求1所述的制作方法，其中，
    所述显示面板的制作方法还包括：
    在所述衬底表面形成反射层；
    其中，所述反射层由全反射材料构成。
  6. 根据权利要求5所述的制作方法，其中，
    所述透光层位于所述发光层与所述阳极层之间。
  7. 根据权利要求5所述的制作方法，其中，
    所述透光层位于所述发光层与所述阴极层之间。
  8. 根据权利要求5所述的制作方法，其中，
    所述透光层位于所述反射层与所述阳极层之间。
  9. 根据权利要求8所述的制作方法，其中，
    所述透光层包括无机氧化物、无机氮化物或有机聚合物中的一种或一种以上的组合物。
  10. 一种显示面板，其中，包括衬底、位于所述衬底上的发光器件层、及位于所述发光器件层上的封装层；
    所述发光器件层包括阳极层、位于所述阳极层上的发光层、位于所述发光层上的阴极层，以及
    位于所述阴极层与所述衬底之间的透光层。
  11. 根据权利要求10所述的显示面板，其中，
    所述透光层位于所述发光层与所述阳极层之间。
  12. 根据权利要求10所述的显示面板，其中，
    所述透光层位于所述发光层与所述阴极层之间。
  13. 根据权利要求10所述的显示面板，其中，
    所述透光层位于所述衬底与所述阳极层之间。
  14. 根据权利要求10所述的显示面板，其中，
    所述显示面板还包括位于所述衬底表面的反射层；
    其中，所述反射层由全反射材料构成。
  15. 根据权利要求14所述的显示面板，其中，
    所述透光层位于所述发光层与所述阳极层之间。
  16. 根据权利要求14所述的显示面板，其中，
    所述透光层位于所述发光层与所述阴极层之间。
  17. 根据权利要求14所述的显示面板，其中，
    所述透光层位于所述反射层与所述阳极层之间。
  18. 根据权利要求10所述的显示面板，其中，所述透光层包括无机氧化物、无机氮化物或有机聚合物中的一种或一种以上的组合物。
PCT/CN2019/104682 2019-05-07 2019-09-06 显示面板及其制作方法 WO2020224141A1 (zh)

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CN110085775A (zh) * 2019-05-07 2019-08-02 深圳市华星光电半导体显示技术有限公司 显示面板及其制作方法
CN111261801A (zh) * 2020-02-12 2020-06-09 武汉华星光电半导体显示技术有限公司 一种阵列基板及显示面板
CN113314682A (zh) * 2021-05-27 2021-08-27 京东方科技集团股份有限公司 一种显示面板及其制备方法、电子设备

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