WO2018113018A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2018113018A1
WO2018113018A1 PCT/CN2016/113050 CN2016113050W WO2018113018A1 WO 2018113018 A1 WO2018113018 A1 WO 2018113018A1 CN 2016113050 W CN2016113050 W CN 2016113050W WO 2018113018 A1 WO2018113018 A1 WO 2018113018A1
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layer
metal layer
thin film
display panel
disposed
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PCT/CN2016/113050
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English (en)
French (fr)
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余威
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武汉华星光电技术有限公司
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Priority to US15/503,715 priority Critical patent/US20180212179A1/en
Publication of WO2018113018A1 publication Critical patent/WO2018113018A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the circular polarizer 100 is generally attached to the light-emitting side of the OLED display panel, and the external light will change after passing through the circular polarizer 100.
  • the line polarized light is reflected by the reflective electrode of the thin film transistor 200 and then emitted to the circular polarizer 100, and becomes linearly polarized perpendicular to the polarization direction of the circular polarizer 100, so that it cannot enter the human eye through the circular polarizer 100.
  • the reflective electrode of the thin film transistor 200 includes a gate, a source and a drain, a scan line connected to the gate, and a data line connected to the source.
  • the circular polarizer 100 does not prevent the light emitted by the OLED device 300 from lowering the contrast of the OLED display panel. As shown in FIG. 1, in the existing OLED display panel, the light emitted by the OLED device 300 is not all perpendicular to the substrate. A portion of the light emitted from the substrate 400 is emitted from the side of the OLED device 300.
  • the non-opening region 510 of the pixel defining layer 500 (corresponding to the non-pixel region of the OLED display panel) is incident on the circularly polarized light.
  • the sheet 100 is received by the human eye through the circular polarizer 100, which reduces the contrast of the OLED display panel and affects the display effect.
  • An object of the present invention is to provide a method for fabricating an OLED display panel, which can effectively improve the contrast of the OLED display panel and improve the display effect, and can improve the conductivity of the cathode and reduce the power consumption of the OLED display panel.
  • Another object of the present invention is to provide an OLED display panel with high contrast and good display effect, and at the same time, the cathode has good electrical conductivity and low power consumption.
  • the present invention provides a method for fabricating an OLED display panel, comprising the following steps:
  • Step 1 providing a substrate, forming a thin film transistor layer on the substrate, the thin film transistor layer comprising a plurality of thin film transistors arranged at intervals;
  • Step 2 forming a flat layer on the thin film transistor layer, and forming a plurality of via holes corresponding to the plurality of thin film transistors respectively on the flat layer;
  • Step 3 forming a plurality of anodes disposed at intervals on the flat layer, wherein the plurality of anodes are respectively connected to the plurality of thin film transistors through a plurality of through holes;
  • Step 4 forming a pixel defining layer on the flat layer, the pixel defining layer comprising a plurality of open regions respectively corresponding to the plurality of anodes and a non-opening region between the plurality of open regions;
  • Step 5 forming a plurality of OLED light-emitting layers disposed on the plurality of anodes in the plurality of open regions of the pixel defining layer;
  • Step 6 forming a first metal layer covering the plurality of OLED light emitting layers and the pixel defining layer on the plurality of OLED light emitting layers and the pixel defining layer, and forming a corresponding metal layer on the first metal layer a second metal layer of the non-opening region of the pixel defining layer, the first metal layer and the second metal layer together forming a cathode, and the first metal layer is translucent, the first metal layer and The overlapping area of the second metal layer is opaque.
  • the first metal layer and the second metal layer are formed by an evaporation process; the material of the first metal layer is a magnesium-silver alloy; and the material of the second metal layer includes magnesium, silver and aluminum. At least one of them.
  • the first metal layer has a thickness of 100 ⁇ m to 200 ⁇ m; and the second metal layer has a thickness of 100 ⁇ m or more.
  • the manufacturing method of the OLED display panel of the present invention further includes:
  • Step 7 forming an encapsulation layer on the cathode
  • Step 8 Attach a circular polarizer to the encapsulation layer.
  • the encapsulation layer is a thin film encapsulation layer, and the thin film encapsulation layer includes a plurality of inorganic and organic layers laminated and alternately disposed.
  • the invention also provides an OLED display panel comprising:
  • the thin film transistor layer disposed on the substrate, the thin film transistor layer including a plurality of thin film transistors disposed at intervals;
  • the flat layer disposed on the thin film transistor layer, wherein the flat layer is provided with a plurality of through holes respectively corresponding to the plurality of thin film transistors;
  • the pixel defining layer including a plurality of open regions respectively corresponding to the plurality of anodes and a non-opening region between the plurality of open regions;
  • a cathode disposed on the plurality of OLED light emitting layers and the pixel defining layer, wherein the cathode includes a first metal layer covering the plurality of OLED light emitting layers and the pixel defining layer over the entire surface, and is disposed on the first metal layer And corresponding to the second metal layer of the non-opening region of the pixel defining layer, and the first metal layer is translucent, and the overlapping area of the first metal layer and the second metal layer is opaque .
  • the material of the first metal layer is a magnesium-silver alloy; the material of the second metal layer includes at least one of magnesium, silver and aluminum.
  • the first metal layer has a thickness of 100 ⁇ m to 200 ⁇ m; and the second metal layer has a thickness of 100 ⁇ m or more.
  • the OLED display panel of the present invention further includes: an encapsulation layer disposed on the cathode; and a circular polarizer disposed on the encapsulation layer.
  • the encapsulation layer is a thin film encapsulation layer, and the thin film encapsulation layer includes a plurality of inorganic and organic layers laminated and alternately disposed.
  • the invention also provides an OLED display panel comprising:
  • the thin film transistor layer disposed on the substrate, the thin film transistor layer including a plurality of thin film transistors disposed at intervals;
  • the flat layer disposed on the thin film transistor layer, wherein the flat layer is provided with a plurality of through holes respectively corresponding to the plurality of thin film transistors;
  • the pixel defining layer including a plurality of open regions respectively corresponding to the plurality of anodes and a non-opening region between the plurality of open regions;
  • a cathode disposed on the plurality of OLED light emitting layers and the pixel defining layer, wherein the cathode includes a first metal layer covering the plurality of OLED light emitting layers and the pixel defining layer over the entire surface, and is disposed on the first metal layer And corresponding to the second metal layer of the non-opening region of the pixel defining layer, and the first metal layer is translucent, and the overlapping area of the first metal layer and the second metal layer is opaque ;
  • the material of the first metal layer is a magnesium-silver alloy
  • the material of the second metal layer comprises at least one of magnesium, silver and aluminum
  • the first metal layer has a thickness of 100 ⁇ m to 200 ⁇ m; and the second metal layer has a thickness of 100 ⁇ m or more.
  • the present invention provides a method for fabricating an OLED display panel, wherein the cathode of the OLED display panel has a two-layer structure, the cathode includes a first metal layer on the entire surface, and is disposed on the first a second metal layer on the metal layer and corresponding to the non-pixel region of the OLED display panel, so that in the pixel region of the OLED display panel, the cathode is composed of the first metal layer and is translucent, in the non-pixel region of the OLED display panel, The cathode is composed of a first metal layer and a second metal layer which are laminated and disposed in an opaque manner.
  • the light transmittance of the pixel region of the OLED display panel is not affected, and the non-pixel region of the OLED display panel has no light emission. It can effectively improve the contrast of the OLED display panel and improve the display effect; on the other hand, by setting the cathode to a double layer structure, the conductivity of the cathode can be improved, and the power consumption of the OLED display panel can be reduced.
  • the OLED display panel provided by the invention can effectively improve the contrast of the OLED display panel and improve the display effect by setting the cathode as a double layer structure; on the other hand, the conductive performance of the cathode can be improved, and the work of the OLED display panel can be reduced. Consumption.
  • FIG. 1 is a schematic diagram of light emitted from an OLED device in a conventional OLED display panel, which is reflected from a non-pixel region of an OLED display panel after being reflected by a reflective electrode of a thin film transistor;
  • FIG. 2 is a flow chart of a method of fabricating an OLED display panel of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an OLED display panel of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an OLED display panel of the present invention.
  • step 4 is a schematic diagram of step 4 of a method for fabricating an OLED display panel of the present invention.
  • step 5 is a schematic diagram of step 5 of a method for fabricating an OLED display panel of the present invention.
  • step 6 is a schematic diagram of step 6 of a method for fabricating an OLED display panel of the present invention.
  • step 7 of a method for fabricating an OLED display panel of the present invention is a schematic diagram of step 7 of a method for fabricating an OLED display panel of the present invention.
  • FIG. 10 is a schematic diagram of step 8 of the method for fabricating an OLED display panel of the present invention and a schematic structural view of the OLED display panel of the present invention.
  • the present invention provides a method for fabricating an OLED display panel, including the following steps:
  • Step 1 as shown in FIG. 3, a base substrate 10 is provided on which a thin film transistor layer 20 is formed, the thin film transistor layer 20 including a plurality of thin film transistors 30 arranged at intervals.
  • the base substrate 10 may be a rigid substrate or a flexible substrate, and the rigid substrate is preferably a glass substrate, and the flexible substrate is preferably a polyimide film.
  • the OLED display panel produced by the present invention is a rigid OLED display panel
  • the base substrate 10 is a flexible substrate
  • the OLED display panel subsequently produced by the present invention is a flexible OLED display. panel.
  • the thin film transistor 30 includes a gate 31 disposed on the base substrate 10, a gate insulating layer 32 disposed on the gate 31, and a gate electrode a semiconductor layer 33 on the insulating layer 32, a source 34 and a drain 35 provided on the semiconductor layer 33, and a passivation layer 37 on the source 34, the drain 35 and the semiconductor layer 33; and a pass hole 371 corresponding to the drain 35 on the passivation layer 37.
  • the reflective electrode in the thin film transistor 30 includes a structural layer made of a metal material such as a gate electrode 31, a source electrode 34, and a drain electrode 35.
  • Step 2 As shown in FIG. 4, a flat layer 40 is formed on the thin film transistor layer 20, and a plurality of through holes 41 respectively corresponding to the upper portions of the plurality of thin film transistors 30 are formed on the flat layer 40.
  • the flat layer 40 is an organic material.
  • the through hole 41 on the flat layer 40 corresponds to the via 371 on the passivation layer 37.
  • Step 3 As shown in FIG. 5, a plurality of anodes 45 are formed on the flat layer 40, and the plurality of anodes 45 are connected to the plurality of thin film transistors 30 through a plurality of through holes 41, respectively.
  • the anode 45 is a reflective electrode, so that the OLED display panel of the present invention constitutes a top-emitting OLED display panel.
  • the anode 45 includes a layer of two indium tin oxide (ITO) and a layer of silver (Ag) interposed between the layers of indium tin oxide.
  • ITO indium tin oxide
  • Ag silver
  • the plurality of anodes 45 respectively pass through the plurality of through holes 41 on the flat layer 40 and the plurality of via holes 371 on the passivation layer and the plurality of thin film transistors 30.
  • the drains 35 are connected.
  • Step 4 as shown in FIG. 6, a pixel defining layer 50 is formed on the flat layer 40, and the pixel defining layer 50 includes a plurality of open regions 51 respectively corresponding to the plurality of anodes 45 and located in the plurality of A non-opening region 52 between the open areas 51.
  • the open area 51 and the non-open area 52 of the pixel defining layer 50 respectively correspond to the pixel area and the non-pixel area of the OLED display panel.
  • the pixel defining layer 50 is a transparent organic material.
  • Step 5 As shown in FIG. 7, a plurality of OLED light-emitting layers 60 disposed on the plurality of anodes 45 are respectively formed in the plurality of open regions 51 of the pixel defining layer 50.
  • the plurality of OLED light emitting layers 60 are formed by evaporation.
  • the OLED light-emitting layer 60 includes a hole injection layer (not shown), a hole transport layer (not shown), and a light-emitting layer (not shown) which are stacked in this order from the bottom to the top of the anode 45. ), an electron transport layer (not shown), and an electron injection layer (not shown).
  • Step 6 as shown in FIG. 8, a first metal layer 71 covering the plurality of OLED light emitting layers 60 and the pixel defining layer 50 is formed on the plurality of OLED light emitting layers 60 and the pixel defining layer 50.
  • a non-opening region 52 corresponding to the pixel defining layer 50 is formed on the first metal layer 71.
  • a second metal layer 72, the first metal layer 71 and the second metal layer 72 together form a cathode 70, and the first metal layer 71 is translucent, the first metal layer 71 and the The overlapping area of the second metal layer 72 is opaque.
  • the material of the first metal layer 71 is a magnesium-silver alloy.
  • the material of the second metal layer 72 includes at least one of metal materials having good electrical conductivity such as magnesium, silver, and aluminum.
  • the first metal layer 71 and the second metal layer 72 are formed by an evaporation process.
  • the evaporation process of the first metal layer 71 uses a common metal mask
  • the evaporation process of the second metal layer 72 uses a fine metal mask (FMM).
  • the first metal layer 71 has a thickness of 100 ⁇ m to 200 ⁇ m, and the thickness range can ensure that the first metal layer 71 is translucent.
  • the thickness of the second metal layer 72 is 100 ⁇ m or more, and the greater the thickness of the second metal layer 72, the better the conductivity of the cathode 70.
  • the cathode of the top-emitting OLED device is generally only composed of a first metal layer which is translucent.
  • a second metal layer 72 on the first metal layer 71 on the one hand, it can be ensured.
  • the portion of the cathode 70 corresponding to the upper portion of the OLED light-emitting layer 60 is composed only of the first metal layer 71 which is translucent, ensuring that the light emitted from the OLED light-emitting layer 60 is not affected, while preventing the light emitted from the OLED light-emitting layer 60 from passing through the thin film transistor.
  • the reflection electrode of 30 is reflected from the non-opening region 52 (non-pixel region) of the pixel defining layer 50 into the human eye, thereby improving the contrast of the OLED display panel; on the other hand, by adding a second layer on the first metal layer 71
  • the metal layer 72 can also increase the thickness of the cathode 70, thereby reducing the electrical resistance of the cathode 70, improving the electrical conductivity of the cathode 70, and thereby reducing the power consumption of the OLED display panel.
  • Steps 1 to 6 above complete the main manufacturing steps of the OLED display panel.
  • the OLED device needs to be packaged, and a circular polarizer is attached on the package layer. Therefore, the method for fabricating the OLED display panel of the present invention further includes:
  • Step 7 as shown in FIG. 9, an encapsulation layer 80 is formed on the cathode 70 to block the erosion of the OLED device by external water and oxygen, thereby improving the service life of the OLED device.
  • the encapsulation layer 80 may be a glass encapsulation layer or a thin film encapsulation (TFE) layer, preferably a thin film encapsulation layer.
  • TFE thin film encapsulation
  • the thin film encapsulation layer comprises a plurality of inorganic layer and an organic material layer which are stacked and alternately arranged;
  • the material of the inorganic material layer comprises silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride. At least one of (SiO x N x );
  • the material of the organic layer includes Acrylic, Hexamethyldisiloxane (HMDSO), polyacrylate, polycarbonate, and polystyrene One or more.
  • Step 8 as shown in FIG. 10, a circular polarizer 90 is attached to the encapsulation layer 80 to prevent external light from affecting the contrast of the OLED display panel, and the display effect of the OLED display panel is improved.
  • the cathode 70 is provided in a two-layer structure, and the cathode 70 includes a first metal layer 71 on the entire surface and a non-corresponding to the OLED display panel. a second metal layer 72 of the pixel region, such that in the pixel region of the OLED display panel, the cathode 70 is composed of the first metal layer 71 and is translucent, in the non-pixel region of the OLED display panel, the cathode 70 is provided by the stack A metal layer 71 and a second metal layer 72 are formed and are opaque.
  • the light transmittance of the pixel region of the OLED display panel is not affected, and the non-pixel region of the OLED display panel has no light emission, which can effectively improve the OLED.
  • the contrast of the display panel is improved to improve the display effect; on the other hand, by providing the cathode 70 in a two-layer structure, the conductivity of the cathode 70 can be improved, and the power consumption of the OLED display panel can be reduced.
  • the present invention further provides an OLED display panel, including:
  • the thin film transistor layer 20 includes a plurality of thin film transistors 30 arranged at intervals;
  • the flat layer 40 disposed on the thin film transistor layer 20, the flat layer 40 is provided with a plurality of through holes 41 respectively corresponding to the plurality of thin film transistors 30;
  • a plurality of anodes 45 disposed on the flat layer 40 and spaced apart from each other, wherein the plurality of anodes 45 are respectively connected to the plurality of thin film transistors 30 through a plurality of through holes 41;
  • a pixel defining layer 50 disposed on the flat layer 40, the pixel defining layer 50 including a plurality of open regions 51 respectively corresponding to the plurality of anodes 45 and non-openings between the plurality of open regions 51 Area 52;
  • the cathode 70 disposed on the plurality of OLED light-emitting layers 60 and the pixel defining layer 50, the cathode 70 includes a first metal layer 71 covering the plurality of OLED light-emitting layers 60 and the pixel defining layer 50 over the entire surface, and a second metal layer 72 on the first metal layer 71 and corresponding to the non-opening region 52 of the pixel defining layer 50, and the first metal layer 71 is translucent, the first metal layer 71 The overlapping area with the second metal layer 72 is opaque.
  • the base substrate 10 may be a rigid substrate or a flexible substrate, and the rigid base
  • the plate is preferably a glass substrate, and the flexible substrate is preferably a polyimide film.
  • the thin film transistor 30 includes a gate 31 disposed on the base substrate 10, a gate insulating layer 32 disposed on the gate 31, and a semiconductor disposed on the gate insulating layer 32. a layer 33, a source 34 and a drain 35 disposed on the semiconductor layer 33, and a passivation layer 37 disposed on the source 34, the drain 35 and the semiconductor layer 33; the passivation layer 37 A via 371 corresponding to the drain 35 and corresponding to the via 41 is provided.
  • the anode 45 is connected to the drains 35 of the plurality of thin film transistors 30 through a plurality of vias 41 and vias 371, respectively.
  • the flat layer 40 is an organic material.
  • the anode 45 is a reflective electrode, so that the OLED display panel of the present invention constitutes a top-emitting OLED display panel.
  • the anode 45 includes a layer of two indium tin oxide (ITO) and a layer of silver (Ag) interposed between the layers of indium tin oxide.
  • ITO indium tin oxide
  • Ag silver
  • the pixel defining layer 50 is a transparent organic material.
  • the OLED light-emitting layer 60 includes a hole injection layer (not shown), a hole transport layer (not shown), and a light-emitting layer (not shown) which are stacked in this order from the bottom to the top of the anode 45. ), an electron transport layer (not shown), and an electron injection layer (not shown).
  • the material of the first metal layer 71 is a magnesium-silver alloy.
  • the material of the second metal layer 72 includes at least one of metal materials having good electrical conductivity such as magnesium, silver, and aluminum.
  • the first metal layer 71 has a thickness of 100 ⁇ m to 200 ⁇ m
  • the second metal layer 72 has a thickness of 100 ⁇ m or more.
  • the OLED display panel of the present invention further includes an encapsulation layer 80 disposed on the cathode 70 and a circular polarizer 90 disposed on the encapsulation layer 80.
  • the encapsulation layer 80 may be a glass encapsulation layer or a thin film encapsulation layer, preferably a thin film encapsulation layer.
  • the thin film encapsulation layer comprises a plurality of inorganic layer and an organic material layer which are stacked and alternately arranged;
  • the material of the inorganic material layer comprises silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride.
  • the material of the organic layer includes Acrylic, hexamethyldisiloxane (HMDSO), polyacrylate, polycarbonate, and polystyrene One or more.
  • the OLED display panel can effectively improve the contrast of the OLED display panel and improve the display effect by setting the cathode 70 as a two-layer structure.
  • the conductive performance of the cathode 70 can be improved, and the power consumption of the OLED display panel can be reduced.
  • the present invention provides an OLED display panel and a method of fabricating the same.
  • the invention a method for fabricating an OLED display panel, wherein the cathode of the OLED display panel has a two-layer structure, the cathode includes a first metal layer on the entire surface, and a non-pixel disposed on the first metal layer and corresponding to the OLED display panel a second metal layer of the region, such that in the pixel region of the OLED display panel, the cathode is composed of a first metal layer and is translucent, in the non-pixel region of the OLED display panel, the cathode is provided by the first metal layer and the first layer
  • the two metal layers are formed and opaque, so that the light transmittance of the pixel area of the OLED display panel is not affected, and the non-pixel area of the OLED display panel has no light emission, which can effectively improve the contrast of the OLED display panel and improve the display.
  • the conductivity of the cathode can be improved, and the power consumption of the OLED display panel can be reduced.
  • the OLED display panel of the present invention can effectively improve the contrast of the OLED display panel and improve the display effect by setting the cathode as a two-layer structure; on the other hand, the conductive performance of the cathode can be improved, and the power consumption of the OLED display panel can be reduced.

Abstract

一种OLED显示面板及其制作方法，该制作方法制得的OLED显示面板的阴极（70）具有双层结构，阴极(70)包括整面的第一金属层(71)以及设于第一金属层(71)上且对应于OLED显示面板的非像素区的第二金属层(72)，从而在OLED显示面板的像素区，阴极(70)由第一金属层(71)构成且呈半透明状，在OLED显示面板的非像素区，阴极(70)由叠层设置的第一金属层(71)与第二金属层(72)构成且呈不透明状，这样一方面，OLED显示面板的像素区的透光率不受到影响，同时OLED显示面板的非像素区没有光线射出，可有效提高OLED显示面板的对比度，提高显示效果；另一方面，通过将阴极(70)设置为双层结构，可提升阴极（70）的导电性能，减少OLED显示面板的功耗。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
如图1所示，现有的OLED显示面板中，为防止室外光线的反射造成对比度下降，一般会在OLED显示面板的出光侧贴附圆偏光片100，外界光线经过圆偏光片100后会变成线偏光，到薄膜晶体管200的反射电极反射后再射出至圆偏光片100时，会变成与圆偏光片100的偏振方向垂直的线偏光，故无法透过圆偏光片100进入人眼，从而确保OLED显示面板在室外的对比度，提高显示效果。其中，所述薄膜晶体管200的反射电极包括：栅极、源极和漏极、与栅极相连的扫描线、以及与源极相连的数据线。 然而，圆偏光片100并不能阻止OLED器件300自身发出的光降低OLED显示面板的对比度，如图1所示，现有的OLED显示面板中，OLED器件300发出的光线并不是全部垂直于衬底基板400出射的，部分光线会从OLED器件300的侧面射出，经过薄膜晶体管200的反射电极反射后，从像素定义层500的非开口区510(对应OLED显示面板的非像素区)射入圆偏光片100，透过圆偏光片100被人眼接收，如此会降低OLED显示面板的对比度，影响显示效果。
发明内容
本发明的目的在于提供一种OLED显示面板的制作方法，能够有效提高OLED显示面板的对比度，提高显示效果，同时可提升阴极的导电性能，减少OLED显示面板的功耗。
本发明的目的还在于提供一种OLED显示面板，具有高对比度，显示效果好，同时其阴极的导电性能好，功耗低。
为实现上述目的，本发明提供一种OLED显示面板的制作方法，包括如下步骤：
步骤1、提供衬底基板，在所述衬底基板上形成薄膜晶体管层，所述薄膜晶体管层包括间隔设置的数个薄膜晶体管；
步骤2、在所述薄膜晶体管层上形成平坦层，在所述平坦层上形成分别对应于数个薄膜晶体管上方的数个通孔；
步骤3、在所述平坦层上形成间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
步骤4、在所述平坦层上形成像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
步骤5、在所述像素定义层的数个开口区中分别形成设于数个阳极上的数个OLED发光层；
步骤6、在所述数个OLED发光层与像素定义层上形成整面覆盖所述数个OLED发光层与像素定义层的第一金属层，在所述第一金属层上形成对应于所述像素定义层的非开口区的第二金属层，所述第一金属层与所述第二金属层共同构成阴极，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状。
所述步骤6中，采用蒸镀制程形成所述第一金属层与第二金属层；所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝 中的至少一种。
所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
进一步的，本发明的OLED显示面板的制作方法还包括：
步骤7、在所述阴极上形成封装层；
步骤8、在所述封装层上贴附圆偏光片。
所述封装层为薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层。
本发明还提供一种OLED显示面板，包括：
衬底基板；
设于所述衬底基板上的薄膜晶体管层，所述薄膜晶体管层包括间隔设置的数个薄膜晶体管；
设于所述薄膜晶体管层上的平坦层，所述平坦层上设有分别对应于数个薄膜晶体管上方的数个通孔；
设于所述平坦层上且间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
设于所述平坦层上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
设于所述数个OLED发光层与像素定义层上的阴极，所述阴极包括整面覆盖所述数个OLED发光层与像素定义层的第一金属层以及设于所述第一金属层上且对应于所述像素定义层的非开口区的第二金属层，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状。
所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝中的至少一种。
所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
进一步的，本发明的OLED显示面板还包括：设于所述阴极上的封装层、以及设于所述封装层上的圆偏光片。
所述封装层为薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层。
本发明还提供一种OLED显示面板，包括：
衬底基板；
设于所述衬底基板上的薄膜晶体管层，所述薄膜晶体管层包括间隔设置的数个薄膜晶体管；
设于所述薄膜晶体管层上的平坦层，所述平坦层上设有分别对应于数个薄膜晶体管上方的数个通孔；
设于所述平坦层上且间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
设于所述平坦层上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
设于所述数个OLED发光层与像素定义层上的阴极，所述阴极包括整面覆盖所述数个OLED发光层与像素定义层的第一金属层以及设于所述第一金属层上且对应于所述像素定义层的非开口区的第二金属层，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状；
其中，所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝中的至少一种；
其中，所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
本发明的有益效果：本发明提供的一种OLED显示面板的制作方法，制得的OLED显示面板的阴极具有双层结构，所述阴极包括整面的第一金属层以及设于所述第一金属层上且对应于OLED显示面板的非像素区的第二金属层，从而在OLED显示面板的像素区，阴极由第一金属层构成且呈半透明状，在OLED显示面板的非像素区，阴极由叠层设置的第一金属层与第二金属层构成且呈不透明状，这样一方面，OLED显示面板的像素区的透光率不受到影响，同时OLED显示面板的非像素区没有光线射出，可有效提高OLED显示面板的对比度，提高显示效果；另一方面，通过将阴极设置为双层结构，可提升阴极的导电性能，减少OLED显示面板的功耗。本发明提供的一种OLED显示面板，通过将阴极设置为双层结构，一方面能够有效提高OLED显示面板的对比度，提高显示效果；另一方面可提升阴极的导电性能，减少OLED显示面板的功耗。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的OLED显示面板中OLED器件发出的光经过薄膜晶体管的反射电极反射后从OLED显示面板的非像素区射出的示意图；
图2为本发明的OLED显示面板的制作方法的流程图；
图3为本发明的OLED显示面板的制作方法的步骤1的示意图；
图4为本发明的OLED显示面板的制作方法的步骤2的示意图；
图5为本发明的OLED显示面板的制作方法的步骤3的示意图；
图6为本发明的OLED显示面板的制作方法的步骤4的示意图；
图7为本发明的OLED显示面板的制作方法的步骤5的示意图；
图8为本发明的OLED显示面板的制作方法的步骤6的示意图；
图9为本发明的OLED显示面板的制作方法的步骤7的示意图；
图10为本发明的OLED显示面板的制作方法的步骤8的示意图暨本发明的OLED显示面板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED显示面板的制作方法，包括如下步骤：
步骤1、如图3所示，提供衬底基板10，在所述衬底基板10上形成薄膜晶体管层20，所述薄膜晶体管层20包括间隔设置的数个薄膜晶体管30。
具体的，所述衬底基板10可以为刚性基板或者柔性基板，所述刚性基板优选为玻璃基板，所述柔性基板优选为聚酰亚胺膜。
所述衬底基板10为刚性基板时，本发明后续制得的OLED显示面板为刚性OLED显示面板，所述衬底基板10为柔性基板时，本发明后续制得的OLED显示面板为柔性OLED显示面板。
具体的，如图3所示，所述薄膜晶体管30包括设于所述衬底基板10上的栅极31、设于所述栅极31上的栅极绝缘层32、设于所述栅极绝缘层32上的半导体层33、设于所述半导体层33上的源极34与漏极35、以及设 于所述源极34、漏极35与半导体层33上的钝化层37；所述钝化层37上设有对应于所述漏极35上方的过孔371。
所述薄膜晶体管30中的反射电极包括栅极31、源极34与漏极35等由金属材料制备的结构层。
步骤2、如图4所示，在所述薄膜晶体管层20上形成平坦层40，在所述平坦层40上形成分别对应于数个薄膜晶体管30上方的数个通孔41。
具体的，所述平坦层40为有机材料。
具体的，如图4所示，所述平坦层40上的通孔41与所述钝化层37上的过孔371相对应。
步骤3、如图5所示，在所述平坦层40上形成间隔设置的数个阳极45，所述数个阳极45分别通过数个通孔41与数个薄膜晶体管30相连接。
具体的，所述阳极45为反射电极，使得本发明的OLED显示面板构成顶发光OLED显示面板。
优选的，所述阳极45包括两氧化铟锡(ITO)层与夹设于两氧化铟锡层之间的银(Ag)层。
具体的，如图5所示，所述数个阳极45分别通过所述平坦层40上的数个通孔41以及所述钝化层上的数个过孔371与所述数个薄膜晶体管30的漏极35相连接。
步骤4、如图6所示，在所述平坦层40上形成像素定义层50，所述像素定义层50包括分别对应于所述数个阳极45的数个开口区51以及位于所述数个开口区51之间的非开口区52。
具体的，所述像素定义层50的开口区51与非开口区52分别对应OLED显示面板的像素区与非像素区。
具体的，所述像素定义层50为透明有机材料。
步骤5、如图7所示，在所述像素定义层50的数个开口区51中分别形成设于数个阳极45上的数个OLED发光层60。
具体的，所述步骤5中，采用蒸镀的方法形成所述数个OLED发光层60。
具体的，所述OLED发光层60包括在所述阳极45上从下到上依次层叠设置的空穴注入层(未图示)、空穴传输层(未图示)、发光层(未图示)、电子传输层(未图示)、及电子注入层(未图示)。
步骤6、如图8所示，在所述数个OLED发光层60与像素定义层50上形成整面覆盖所述数个OLED发光层60与像素定义层50的第一金属层71，在所述第一金属层71上形成对应于所述像素定义层50的非开口区52 的第二金属层72，所述第一金属层71与所述第二金属层72共同构成阴极70，并且，所述第一金属层71呈半透明状，所述第一金属层71与所述第二金属层72的重叠区域呈不透明状。
具体的，所述第一金属层71的材料为镁银合金。
具体的，所述第二金属层72的材料包括镁、银与铝等导电性能较好的金属材料中的至少一种。
具体的，所述步骤6中，采用蒸镀制程形成所述第一金属层71与第二金属层72。
具体的，所述第一金属层71的蒸镀制程使用普通金属掩膜板，所述第二金属层72的蒸镀制程使用精密金属掩膜板(FMM，fine metal mask)。
具体的，所述第一金属层71的厚度为100μm-200μm，该厚度范围可以保证第一金属层71呈半透明状。
具体的，所述第二金属层72的厚度为100μm以上，所述第二金属层72的厚度越大，所述阴极70的导电性能越好。
现有的OLED显示面板中，顶发光OLED器件的阴极通常仅由呈半透明状的第一金属层构成，本发明通过在第一金属层71上增设第二金属层72，一方面可以保证所述阴极70上对应于OLED发光层60上方的部分仅由呈半透明状的第一金属层71构成，保证OLED发光层60的出光不受影响，同时防止OLED发光层60发出的光线经由薄膜晶体管30的反射电极反射后从像素定义层50的非开口区52(非像素区)透过进入人眼，提高了OLED显示面板的对比度；另一方面，通过在第一金属层71上增设第二金属层72，还能够增加阴极70的厚度，从而降低阴极70的电阻，提高阴极70的导电性能，进而减少OLED显示面板的功耗。
以上步骤1至步骤6完成了OLED显示面板的主要制作步骤，通常情况下，为提高OLED器件的使用寿命和显示效果，还需要对OLED器件进行封装，并在封装层上贴附圆偏光片，因此，本发明的OLED显示面板的制作方法还包括：
步骤7、如图9所示，在所述阴极70上形成封装层80，以阻挡外界水氧对OLED器件的侵蚀，提高OLED器件的使用寿命。
具体的，所述封装层80可以为玻璃封装层或者薄膜封装(TFE，Thin Film Encapsulation)层，优选为薄膜封装层。
具体的，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层；所述无机物层的材料包括氧化硅(SiOx)、氮化硅(SiNx)、及氮氧化硅(SiOxNx)中的至少一种；所述有机物层的材料包括丙烯酸脂(Acrylic)、 六甲基二甲硅醚(HMDSO)、聚丙烯酸酯、聚碳酸脂、及聚苯乙烯中的一种或多种。
步骤8、如图10所示，在所述封装层80上贴附圆偏光片90，以避免外界光线对OLED显示面板的对比度造成影响，提高OLED显示面板的显示效果。
上述OLED显示面板的制作方法，制得的阴极70具有双层结构，所述阴极70包括整面的第一金属层71以及设于所述第一金属层71上且对应于OLED显示面板的非像素区的第二金属层72，从而在OLED显示面板的像素区，阴极70由第一金属层71构成且呈半透明状，在OLED显示面板的非像素区，阴极70由叠层设置的第一金属层71与第二金属层72构成且呈不透明状，这样一方面，OLED显示面板的像素区的透光率不受到影响，同时OLED显示面板的非像素区没有光线射出，可有效提高OLED显示面板的对比度，提高显示效果；另一方面，通过将阴极70设置为双层结构，可提升阴极70的导电性能，减少OLED显示面板的功耗。
请参阅图10，基于上述OLED显示面板的制作方法，本发明还提供一种OLED显示面板，包括：
衬底基板10；
设于所述衬底基板10上的薄膜晶体管层20，所述薄膜晶体管层20包括间隔设置的数个薄膜晶体管30；
设于所述薄膜晶体管层20上的平坦层40，所述平坦层40上设有分别对应于数个薄膜晶体管30上方的数个通孔41；
设于所述平坦层40上且间隔设置的数个阳极45，所述数个阳极45分别通过数个通孔41与数个薄膜晶体管30相连接；
设于所述平坦层40上的像素定义层50，所述像素定义层50包括分别对应于所述数个阳极45的数个开口区51以及位于所述数个开口区51之间的非开口区52；
设于所述像素定义层50的数个开口区51中且分别设于所述数个阳极45上的数个OLED发光层60；
设于所述数个OLED发光层60与像素定义层50上的阴极70，所述阴极70包括整面覆盖所述数个OLED发光层60与像素定义层50的第一金属层71以及设于所述第一金属层71上且对应于所述像素定义层50的非开口区52的第二金属层72，并且，所述第一金属层71呈半透明状，所述第一金属层71与所述第二金属层72的重叠区域呈不透明状。
具体的，所述衬底基板10可以为刚性基板或者柔性基板，所述刚性基 板优选为玻璃基板，所述柔性基板优选为聚酰亚胺膜。
具体的，所述薄膜晶体管30包括设于所述衬底基板10上的栅极31、设于所述栅极31上的栅极绝缘层32、设于所述栅极绝缘层32上的半导体层33、设于所述半导体层33上的源极34与漏极35、以及设于所述源极34、漏极35与半导体层33上的钝化层37；所述钝化层37上设有对应于所述漏极35上方且与通孔41对应的过孔371，所述阳极45分别通过数个通孔41及过孔371与数个薄膜晶体管30的漏极35相连接。
具体的，所述平坦层40为有机材料。
具体的，所述阳极45为反射电极，使得本发明的OLED显示面板构成顶发光OLED显示面板。
优选的，所述阳极45包括两氧化铟锡(ITO)层与夹设于两氧化铟锡层之间的银(Ag)层。
具体的，所述像素定义层50为透明有机材料。
具体的，所述OLED发光层60包括在所述阳极45上从下到上依次层叠设置的空穴注入层(未图示)、空穴传输层(未图示)、发光层(未图示)、电子传输层(未图示)、及电子注入层(未图示)。
具体的，所述第一金属层71的材料为镁银合金。
具体的，所述第二金属层72的材料包括镁、银与铝等导电性能较好的金属材料中的至少一种。
具体的，所述第一金属层71的厚度为100μm-200μm，所述第二金属层72的厚度为100μm以上。
进一步的，本发明的OLED显示面板还包括：设于所述阴极70上的封装层80、以及设于所述封装层80上的圆偏光片90。
具体的，所述封装层80可以为玻璃封装层或者薄膜封装层，优选为薄膜封装层。
具体的，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层；所述无机物层的材料包括氧化硅(SiOx)、氮化硅(SiNx)、及氮氧化硅(SiOxNx)中的至少一种；所述有机物层的材料包括丙烯酸脂(Acrylic)、六甲基二甲硅醚(HMDSO)、聚丙烯酸酯、聚碳酸脂、及聚苯乙烯中的一种或多种。
上述OLED显示面板，通过将阴极70设置为双层结构，一方面能够有效提高OLED显示面板的对比度，提高显示效果；另一方面可提升阴极70的导电性能，减少OLED显示面板的功耗。
综上所述，本发明提供一种OLED显示面板及其制作方法。本发明的 OLED显示面板的制作方法，制得的OLED显示面板的阴极具有双层结构，所述阴极包括整面的第一金属层以及设于所述第一金属层上且对应于OLED显示面板的非像素区的第二金属层，从而在OLED显示面板的像素区，阴极由第一金属层构成且呈半透明状，在OLED显示面板的非像素区，阴极由叠层设置的第一金属层与第二金属层构成且呈不透明状，这样一方面，OLED显示面板的像素区的透光率不受到影响，同时OLED显示面板的非像素区没有光线射出，可有效提高OLED显示面板的对比度，提高显示效果；另一方面，通过将阴极设置为双层结构，可提升阴极的导电性能，减少OLED显示面板的功耗。本发明的OLED显示面板，通过将阴极设置为双层结构，一方面能够有效提高OLED显示面板的对比度，提高显示效果；另一方面可提升阴极的导电性能，减少OLED显示面板的功耗。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED显示面板的制作方法，包括如下步骤：
    步骤1、提供衬底基板，在所述衬底基板上形成薄膜晶体管层，所述薄膜晶体管层包括间隔设置的数个薄膜晶体管；
    步骤2、在所述薄膜晶体管层上形成平坦层，在所述平坦层上形成分别对应于数个薄膜晶体管上方的数个通孔；
    步骤3、在所述平坦层上形成间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
    步骤4、在所述平坦层上形成像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    步骤5、在所述像素定义层的数个开口区中分别形成设于数个阳极上的数个OLED发光层；
    步骤6、在所述数个OLED发光层与像素定义层上形成整面覆盖所述数个OLED发光层与像素定义层的第一金属层，在所述第一金属层上形成对应于所述像素定义层的非开口区的第二金属层，所述第一金属层与所述第二金属层共同构成阴极，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状。
  2. 如权利要求1所述的OLED显示面板的制作方法，其中，所述步骤6中，采用蒸镀制程形成所述第一金属层与第二金属层；所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝中的至少一种。
  3. 如权利要求1所述的OLED显示面板的制作方法，其中，所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
  4. 如权利要求1所述的OLED显示面板的制作方法，还包括：
    步骤7、在所述阴极上形成封装层；
    步骤8、在所述封装层上贴附圆偏光片。
  5. 如权利要求4所述的OLED显示面板的制作方法，其中，所述封装层为薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层。
  6. 一种OLED显示面板，包括：
    衬底基板；
    设于所述衬底基板上的薄膜晶体管层，所述薄膜晶体管层包括间隔设 置的数个薄膜晶体管；
    设于所述薄膜晶体管层上的平坦层，所述平坦层上设有分别对应于数个薄膜晶体管上方的数个通孔；
    设于所述平坦层上且间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
    设于所述平坦层上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
    设于所述数个OLED发光层与像素定义层上的阴极，所述阴极包括整面覆盖所述数个OLED发光层与像素定义层的第一金属层以及设于所述第一金属层上且对应于所述像素定义层的非开口区的第二金属层，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状。
  7. 如权利要求6所述的OLED显示面板，其中，所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝中的至少一种。
  8. 如权利要求6所述的OLED显示面板，其中，所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
  9. 如权利要求6所述的OLED显示面板，还包括：设于所述阴极上的封装层、以及设于所述封装层上的圆偏光片。
  10. 如权利要求9所述的OLED显示面板，其中，所述封装层为薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层。
  11. 一种OLED显示面板，包括：
    衬底基板；
    设于所述衬底基板上的薄膜晶体管层，所述薄膜晶体管层包括间隔设置的数个薄膜晶体管；
    设于所述薄膜晶体管层上的平坦层，所述平坦层上设有分别对应于数个薄膜晶体管上方的数个通孔；
    设于所述平坦层上且间隔设置的数个阳极，所述数个阳极分别通过数个通孔与数个薄膜晶体管相连接；
    设于所述平坦层上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
    设于所述数个OLED发光层与像素定义层上的阴极，所述阴极包括整面覆盖所述数个OLED发光层与像素定义层的第一金属层以及设于所述第一金属层上且对应于所述像素定义层的非开口区的第二金属层，并且，所述第一金属层呈半透明状，所述第一金属层与所述第二金属层的重叠区域呈不透明状；
    其中，所述第一金属层的材料为镁银合金；所述第二金属层的材料包括镁、银与铝中的至少一种；
    其中，所述第一金属层的厚度为100μm-200μm；所述第二金属层的厚度为100μm以上。
  12. 如权利要求11所述的OLED显示面板，还包括：设于所述阴极上的封装层、以及设于所述封装层上的圆偏光片。
  13. 如权利要求12所述的OLED显示面板，其中，所述封装层为薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层。
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