WO2020199008A1 - 发光基板及其制作方法、电子装置 - Google Patents

发光基板及其制作方法、电子装置 Download PDF

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Publication number
WO2020199008A1
WO2020199008A1 PCT/CN2019/080599 CN2019080599W WO2020199008A1 WO 2020199008 A1 WO2020199008 A1 WO 2020199008A1 CN 2019080599 W CN2019080599 W CN 2019080599W WO 2020199008 A1 WO2020199008 A1 WO 2020199008A1
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Prior art keywords
electrode
layer
light
photoresist
pixel defining
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PCT/CN2019/080599
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English (en)
French (fr)
Inventor
姜明宵
周伟峰
宁策
Original Assignee
京东方科技集团股份有限公司
北京京东方显示技术有限公司
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Application filed by 京东方科技集团股份有限公司, 北京京东方显示技术有限公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2019/080599 priority Critical patent/WO2020199008A1/zh
Priority to US16/639,298 priority patent/US20210134900A1/en
Priority to CN201980000435.7A priority patent/CN110168736A/zh
Publication of WO2020199008A1 publication Critical patent/WO2020199008A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • At least one embodiment of the present disclosure relates to a light-emitting substrate, a manufacturing method thereof, and an electronic device.
  • Organic Light-Emitting Diode (OLED) light-emitting substrates have the advantages of fast response, high brightness, bright colors, light and thin, low energy consumption, etc., and are more and more widely used. They have been applied to display devices and light-emitting devices, etc. .
  • the organic light-emitting diode light-emitting substrate usually includes a light-emitting device and a cathode and anode electrically connected to the light-emitting device.
  • the cathode and anode provide electrical signals to the light-emitting device to control the light-emitting condition of the light-emitting device, so that the electrical properties of the cathode and anode also affect the light-emitting device The luminous quality.
  • At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate.
  • the method includes forming a pixel defining layer through a patterning process using a first mask, wherein the pixel defining layer includes an opening and a partition defining the opening; Forming a first electrode, wherein the first electrode includes a first portion covering at least a part of the partition and a second portion located in the opening; and forming an auxiliary electrode through a patterning process using the first mask, Wherein, the auxiliary electrode is electrically connected to the first electrode, and the auxiliary electrode is located on the partition.
  • the surface of the auxiliary electrode facing the first electrode is in direct contact with the surface of the first electrode facing the auxiliary electrode.
  • the auxiliary electrode is formed after the first electrode is formed, and the auxiliary electrode is located at a partition of the first electrode away from the pixel defining layer. Side of the department.
  • the forming the auxiliary electrode includes: using the first mask through a patterning process on the first electrode far from the pixel defining layer A sacrificial layer is formed on one side, wherein the sacrificial layer exposes the first part of the first electrode and covers the second part of the first electrode; a conductive material layer is formed, wherein the conductive material layer includes disconnected The first part and the second part; the first part of the conductive material layer covers the first part of the first electrode and is in direct contact with the first part of the first electrode, and the second part of the conductive material layer is located in the sacrificial layer The side away from the second part of the first electrode; and simultaneously removing the sacrificial layer and the second part of the conductive material layer to use the first part of the conductive material layer as the auxiliary electrode.
  • the sacrificial layer is a peelable layer
  • the method for manufacturing the substrate further includes: peeling off the sacrificial layer to simultaneously remove the conductive material layer on the sacrificial layer The second part.
  • the forming the sacrificial layer includes: forming a sacrificial material layer covering the first electrode; and applying the first mask to the sacrificial material
  • the material layer performs a photolithography process to form the sacrificial layer; wherein the material of the sacrificial layer includes a first photoresist, and the pixel boundary is formed through a photolithography process using a second photoresist and the first mask. Layer, the photosensitivity of the first photoresist is opposite to that of the second photoresist.
  • the forming the sacrificial layer includes: forming a sacrificial material layer covering the first electrode, the sacrificial material layer being a peelable layer; Forming a first photoresist layer on the sacrificial material layer; and performing a photolithography process on the sacrificial material layer by using the first mask and the first photoresist layer to form the sacrificial layer; wherein
  • the material of the first photoresist layer is a first photoresist
  • the pixel defining layer is formed by a photolithography process using a second photoresist and the first mask.
  • the sensitivity of the first photoresist is Contrary to the sensitivity of the second photoresist.
  • the first photoresist is a negative photoresist
  • the second photoresist is a positive photoresist
  • the second photoresist is One photoresist is a positive photoresist
  • the second photoresist is a negative photoresist
  • the auxiliary electrode is formed before the first electrode is formed, and the auxiliary electrode is located at the partition of the first electrode close to the pixel defining layer. Side of the department.
  • the forming the auxiliary electrode includes: forming a conductive material layer covering the pixel defining layer; and using the first mask and the first light
  • the resist performs a photolithography process on the conductive material layer to form the auxiliary electrode; wherein, the pixel defining layer is formed through a photolithography process using the first mask and the second photoresist, and the first photoresist
  • the photosensitivity of the resist is the same as that of the second photoresist.
  • the conductive material layer is formed by an evaporation method.
  • the material of the first electrode is a metal material; and the first electrode is separated from the surface of the first electrode away from the pixel defining layer. In the direction close to the surface of the pixel defining layer, the thickness of the first electrode is not greater than 20 nm.
  • the method for manufacturing a light-emitting substrate further includes: forming a second electrode and a light-emitting layer in the opening of the pixel defining layer; wherein the second electrode is disposed opposite to the first electrode The light emitting layer is located between the first electrode and the second electrode; the light emitted by the light emitting layer exits through the first electrode.
  • At least one embodiment of the present disclosure further provides a light-emitting substrate.
  • the light-emitting substrate includes a pixel defining layer, a first electrode, and an auxiliary electrode.
  • the pixel defining layer includes an opening and a partition; the first electrode includes a first part on the partition and covering at least part of the partition and a second part in the opening; an auxiliary electrode and the first electrode surface
  • the contact is electrically connected and is located on the partition part; the auxiliary electrode and the pixel defining layer have substantially the same pattern.
  • the auxiliary electrode is located on a side of the first electrode away from the partition portion of the pixel defining layer.
  • the auxiliary electrode is located on a side of the first electrode close to the partition portion of the pixel defining layer.
  • the material of the first electrode is a metal material; the distance from the surface of the first electrode far from the pixel defining layer to the proximity of the first electrode In the direction of the surface of the pixel defining layer, the thickness of the first electrode is not greater than 20 nm.
  • the array substrate provided by at least one embodiment of the present disclosure further includes a second electrode and a light emitting layer located in the opening of the pixel defining layer; the second electrode is arranged opposite to the first electrode, and the light emitting The layer is located between the first electrode and the second electrode; the light emitted by the light-emitting layer exits through the first electrode.
  • At least one embodiment of the present disclosure further provides an electronic device, including any light-emitting substrate provided in the embodiments of the present disclosure.
  • 1A-1G are schematic diagrams of a manufacturing method of a light-emitting substrate provided by some embodiments of the disclosure.
  • 2A-2D are schematic diagrams of another method for manufacturing a light-emitting substrate provided by some embodiments of the present disclosure.
  • 3A-3D are schematic diagrams of yet another method for manufacturing a light-emitting substrate provided by some embodiments of the present disclosure.
  • FIG. 4A is a schematic plan view of a light-emitting substrate provided by some embodiments of the present disclosure.
  • Fig. 4B is a schematic cross-sectional view taken along the line I-I' in Fig. 4A;
  • Fig. 4C is another schematic cross-sectional view taken along the line I-I' in Fig. 4A;
  • FIG. 5 is a schematic diagram of an electronic device provided by some embodiments of the disclosure.
  • the peelable layer refers to a structural layer that can be removed by a peeling process.
  • the direct contact between the surface of the auxiliary electrode facing the first electrode and the surface of the first electrode facing the auxiliary electrode means that the entire surface of the auxiliary electrode facing the first electrode is in contact with the first electrode.
  • the surface contact facing the auxiliary electrode that is, in the direction perpendicular to the base substrate, there is no other position between the entire surface of the auxiliary electrode facing the first electrode and the surface of the first electrode facing the auxiliary electrode.
  • vapor deposition masks can usually be used to directly vaporize to obtain auxiliary cathodes.
  • this solution requires an additional vapor deposition mask (such as high precision metal mask (FMM) )), and the vapor-deposited metal material will adhere to the vapor deposition mask and is difficult to clean, resulting in a limited life of the vapor deposition mask, thereby increasing the cost of the mask; on the other hand, this method is suitable for making specific small and medium-sized substrates. For large-sized substrates, it is not easy to implement or costly.
  • the auxiliary cathode is fabricated on the package cover, and the auxiliary cathode is electrically connected to the cathode during the box alignment.
  • This method requires a separate mask for forming the auxiliary cathode and Not suitable for film packaging.
  • an insulating layer is first formed on the transparent cathode and a via hole is formed through the insulating layer, and an auxiliary cathode is formed on the insulating layer, and the auxiliary cathode and the transparent cathode pass through the via hole.
  • this solution needs to increase the steps of making an insulating layer and a via hole, and separately making a mask for forming a via hole and a mask for making an auxiliary cathode, which greatly increases the manufacturing cost.
  • At least one embodiment of the present disclosure provides a method for manufacturing a light-emitting substrate.
  • the method includes forming a pixel defining layer through a patterning process using a first mask, wherein the pixel defining layer includes an opening and a partition defining the opening; Forming a first electrode, wherein the first electrode includes a first portion covering at least a part of the partition and a second portion located in the opening; and forming an auxiliary electrode through a patterning process using the first mask, Wherein, the auxiliary electrode is electrically connected to the first electrode, and the auxiliary electrode is located on the partition.
  • the pixel defining layer and the auxiliary electrode are formed using the same mask, so that there is no need to separately prepare a mask for forming the auxiliary electrode, simplifying the process of forming the auxiliary electrode, and Save the cost of making the mask.
  • Setting the auxiliary electrode is equivalent to adding a circuit connected in parallel with the first electrode. In this way, the overall resistance of the first electrode area (referring to the total resistance of the electrode structure formed by the first electrode and the auxiliary electrode as a whole) can be reduced, and the signal transmission can be improved. Speed can also reduce Joule heat, which is beneficial to increase the life of the light-emitting substrate and reduce energy consumption.
  • the resistance of the first electrode is relatively low.
  • the auxiliary cathode can avoid or reduce this phenomenon.
  • forming the auxiliary cathode on the partition (non-opening area) of the pixel defining layer can improve the performance of the first electrode without affecting the light transmittance.
  • the manufacturing method of the light-emitting substrate provided by the embodiment of the present disclosure is suitable for manufacturing light-emitting substrates of various sizes, and the applicable substrate size range is wide.
  • FIGS. 1A-1G are schematic diagrams of a manufacturing method of a light-emitting substrate provided by some embodiments of the present disclosure.
  • the manufacturing method of the light-emitting substrate includes: forming the auxiliary electrode using a first photoresist and a first mask. Before forming the auxiliary electrode, the manufacturing method of the light-emitting substrate further includes: forming a pixel defining layer through a patterning process using a first mask, for example, using a second photoresist and a first mask to form the pixel defining layer through a photolithography process . As shown in FIG. 1A, a base substrate 1 is provided, and a pixel defining material layer 20 is formed on the base substrate 1.
  • the base substrate 1 includes a driving circuit for driving a light emitting diode device formed later.
  • the display substrate includes a plurality of pixel units arranged in an array
  • the driving circuit is a pixel circuit of each pixel unit
  • the pixel circuit includes a plurality of transistors, capacitors, etc., for example, 2T1C (Ie, two transistors and one capacitor) type, 4T2C type, etc.
  • the embodiment of the present disclosure does not limit the driving circuit.
  • the material of the pixel defining material layer 20 includes a second photoresist, for example, a coating method may be used to form the pixel defining material layer 20.
  • the method for manufacturing the light-emitting substrate is described by taking the second photoresist being a positive photoresist as an example.
  • the first mask 9 is used to expose the pixel defining material layer 20.
  • the first mask 9 includes a light-transmitting area A and a non-light-transmitting area B.
  • a developing process is performed to form the pixel defining layer 2 as shown in FIG. 1B.
  • the pixel defining layer 2 includes an opening 21 and a partition 22 defining the opening 21.
  • the material of the pixel defining material layer 20 may not be photoresist.
  • the material of the pixel defining material layer 20 is an inorganic material, and the inorganic material includes, for example, silicon nitride, silicon oxide, or silicon oxynitride. At least one of them.
  • a method such as a deposition method is used to form the pixel defining material layer 20, and the manufacturing method of the light-emitting substrate further includes forming a second photoresist layer including a second photoresist on the pixel defining material layer 20 (not shown) ⁇ ), then use the first mask 9 and the second photoresist layer to perform exposure, development, and etching processes on the pixel defining material layer 20, thereby forming the pixel defining layer 2 as shown in FIG. 1B.
  • the embodiment of the present disclosure does not limit the material and specific manufacturing method of the pixel defining layer 2.
  • the manufacturing method of the light-emitting substrate further includes: forming the second electrode 4 and the light-emitting layer 3 in the opening 21 of the pixel defining layer 2 and forming the first electrode 5.
  • the first electrode 5, the light emitting layer 3, and the second electrode 4 constitute a light emitting diode.
  • the light-emitting layer 3 may be an organic light-emitting layer or an inorganic light-emitting layer, correspondingly the light-emitting diode is an organic light-emitting diode (OLED) or an inorganic light-emitting diode, and the organic light-emitting layer may be a composite structure layer, for example, including a stacked electron injection layer, electron Transport layer, light-emitting functional layer, hole transport layer, hole injection layer, electrons reach the light-emitting functional layer through the electron injection layer and the electron transport layer, and holes reach the light-emitting functional layer through the hole injection layer and the hole transport layer.
  • OLED organic light-emitting diode
  • the organic light-emitting layer may be a composite structure layer, for example, including a stacked electron injection layer, electron Transport layer, light-emitting functional layer, hole transport layer, hole injection layer, electrons reach the light-emitting functional layer through the electron injection layer and the electron transport layer, and holes reach the light
  • the light-emitting functional layer may include various appropriate types of materials, such as fluorescent light-emitting materials or phosphorescent light-emitting materials, such as red light-emitting materials, green light-emitting materials, blue light-emitting materials, or white light-emitting materials.
  • fluorescent light-emitting materials such as fluorescent light-emitting materials or phosphorescent light-emitting materials, such as red light-emitting materials, green light-emitting materials, blue light-emitting materials, or white light-emitting materials.
  • phosphorescent light-emitting materials such as red light-emitting materials, green light-emitting materials, blue light-emitting materials, or white light-emitting materials.
  • the embodiments of the present disclosure do not limit the material of the light-emitting layer.
  • the second electrode 4, the light emitting layer 3, and the first electrode 5 are sequentially formed.
  • the material of the second electrode 4 is a metal material.
  • the second electrode 4 can be formed by sputtering or evaporation, and then the light-emitting layer of the light-emitting diode is formed on the second electrode 4.
  • the second electrode 4 is connected to the light-emitting diode device.
  • the drive circuit is electrically connected.
  • the second electrode 4 is arranged opposite to the first electrode 5, and the light-emitting layer 3 is located between the first electrode 5 and the second electrode 4.
  • the first electrode 5 includes a first portion 51 covering at least a part of the partition 22 and a second portion 52 located in the opening 21.
  • the material of the first electrode 5 is a metal material.
  • the metal material is, for example, a metal with a small work function, such as magnesium or silver, so as to reduce damage to the light-emitting layer 3 during the process of forming the first electrode 5 by evaporation.
  • the thickness of the first electrode 5 in the direction perpendicular to the base substrate 1 is not greater than 20 nm, so that the first electrode 5 is light-transmissive, and the light emitted by the light-emitting layer 3 exits through the first electrode 5, and the first electrode 4 It is opaque. That is, the above-mentioned light-emitting substrate is a top emission type.
  • the light-emitting substrate may also be a bottom-emitting type, that is, the light emitted by the light-emitting layer 3 exits through the second electrode 4.
  • the top emission type is described by taking the top emission type as an example.
  • the embodiment of the present disclosure does not limit the order of the steps of forming the pixel defining layer 2 and the steps of forming the first electrode 4 and the light-emitting layer 3.
  • the manufacturing method of the light-emitting substrate further includes: forming an auxiliary electrode through a patterning process using a first mask, the auxiliary electrode is electrically connected with the first electrode, and the auxiliary electrode is located on the partition.
  • the auxiliary electrode is formed after the first electrode is formed, and the auxiliary electrode is located on the side of the first electrode away from the partition part of the pixel defining layer.
  • a sacrificial material layer 60 covering the first electrode 5 is formed on a side of the first electrode 5 away from the pixel defining layer 2.
  • the material of the sacrificial material layer 60 includes a first photoresist, and the photosensitivity of the first photoresist is opposite to that of the aforementioned second photoresist.
  • the first photoresist is a negative photoresist, and correspondingly, the above-mentioned second photoresist is a positive photoresist.
  • the first photoresist is more positive photoresist, and correspondingly, the second photoresist is negative photoresist.
  • the sacrificial material layer 60 is formed by a coating method.
  • a photolithography process is performed on the sacrificial material layer 60 using the first mask 9 to form a sacrificial layer.
  • the first mask 9 is used to perform exposure and development processes on the sacrificial material layer 60 to form the sacrificial layer 6 as shown in FIG. 1E. That is, the sacrificial layer 6 is formed on the side of the first electrode 5 away from the pixel defining layer 2 through a patterning process using the first mask 9.
  • the first mask 9 is the same mask as the first mask 9 used in the photolithography process for forming the pixel defining layer 2.
  • the pattern of the first photoresist sacrificial layer 6 is complementary to the pattern of the pixel defining layer 2.
  • the sacrificial layer 6 exposes the first part 51 of the first electrode and covers the second part 52 of the first electrode.
  • the sacrificial material layer 60 is the first photoresist
  • the sacrificial material layer 60 is a peelable layer, that is, the sacrificial layer is a peelable layer.
  • the peelable layer can be removed by a peeling process.
  • a conductive material layer 701 is formed.
  • the conductive material layer 701 is formed by an evaporation method. Compared with a sputtering process, the evaporation method can reduce damage to the light-emitting layer 3 and is beneficial to protect the light-emitting layer 3.
  • the conductive material layer 701 includes a first portion 71 and a second portion 72 that are disconnected from each other at the edge of the sacrificial layer 6.
  • the first part 71 of the conductive material layer covers the first part 51 of the first electrode 5 and is in direct contact with the first part 51 of the first electrode.
  • the second part 72 of the conductive material layer is located in the second part 52 of the sacrificial layer 6 away from the first electrode. Side. It should be noted that “disconnected from each other" in the embodiments of the present disclosure means: the first part 71 of the conductive material layer and the second part 72 of the conductive material layer do not contact each other, and thus are no longer connected.
  • the manufacturing method of the light-emitting substrate further includes: peeling off the sacrificial layer 6 to simultaneously remove the second portion 72 of the conductive material layer on the sacrificial layer 6, so as to retain the first portion 71 of the conductive material layer as an auxiliary electrode 7. That is, the sacrificial layer and the second part of the conductive material layer are simultaneously removed to use the first part of the conductive material layer as the auxiliary electrode. Since the operation of the peeling process is simple, the step of removing the second part 72 of the conductive material layer on the sacrificial layer 6 by peeling the sacrificial layer 6 at the same time is beneficial to simplify the process and improve the production efficiency.
  • the surface 73 of the auxiliary electrode 7 facing the first electrode 5 is in direct contact with the surface 51 of the first electrode 5 facing the auxiliary electrode 7, that is, the entire surface of the surface 73 is in direct contact with the surface 51 to reduce the
  • the contact resistance between the one electrode 5 and the auxiliary electrode 7 can reduce the overall resistance of the conductive structure integrally formed by the first electrode 5 and the auxiliary electrode 7, thereby reducing the voltage drop caused by the overall resistance and the resistance heating during operation.
  • the entire surface of the surface 73 is in direct contact with the surface 51 means that no other layer or structure exists between any position of the entire surface of the surface 73 and the surface 51.
  • the auxiliary electrode 7 and the pixel defining layer 2 have substantially the same pattern.
  • a sufficiently strong light intensity can be used to make the partition 22 of the pixel defining layer formed perpendicular to the substrate.
  • the cross-sectional shape in the direction of the substrate 1 and the cross-sectional shape of the sacrificial layer 6 in the direction perpendicular to the base substrate 1 are rectangular or approximately rectangular (as shown in FIG. 1E), so that the auxiliary electrode 7 and the pixel defining layer 2 have the same pattern.
  • there will be errors in the manufacturing process so that the line width of the pattern of the auxiliary electrode 7 is not exactly the same as the line width of the pattern of the pixel defining layer 2.
  • the cross-sectional shape of the formed sacrificial layer 6 in the direction perpendicular to the base substrate 1 may be Trapezoid, the upper bottom of the trapezoid away from the base substrate 1 is larger than the lower bottom near the base substrate 1 (not shown in the figure), and the width of the auxiliary electrode formed subsequently in a certain direction of its plane may be smaller than The width of the pixel defining layer 2 in the certain direction.
  • the cross-sectional shape of the formed sacrificial layer 6 in the direction perpendicular to the base substrate 1 may be trapezoidal.
  • the upper bottom of the trapezoid away from the base substrate 1 is smaller than its lower bottom near the base substrate 1 (not shown in the figure), and the width of the auxiliary electrode formed subsequently in a certain direction of its plane is larger than the pixel defining layer 2.
  • the width in the certain direction is included in the scope of the present disclosure.
  • FIGS. 1A-1G are schematic diagrams of another method for manufacturing a light-emitting substrate provided by an embodiment of the present disclosure.
  • This embodiment has the following differences from the embodiment shown in FIGS. 1A-1G.
  • a sacrificial material layer 60 covering the first electrode 5 is formed.
  • the sacrificial material layer 60 is a peelable layer.
  • the material of the sacrificial material layer 60 does not include a photoresist material.
  • the sacrificial material layer 60 may be a peelable layer other than the photoresist layer, such as a peelable layer.
  • the organic coating can be selected by those skilled in the art.
  • a first photoresist material layer 80 is formed on the sacrificial material layer 60.
  • the material of the first photoresist layer 80 includes a first photoresist.
  • the sensitivity of the first photoresist is opposite to that of the second photoresist.
  • a photolithography process is performed on the sacrificial material layer 60 using the first mask 9 and the first photoresist material layer 80 to form a sacrificial layer.
  • exposure, development and etching processes are performed on the sacrificial material layer 60 to form the first photoresist layer 8 and the sacrificial layer 6 as shown in FIG. 2B.
  • a dry etching method is used to etch the sacrificial material layer 60 to prevent the etchant in the wet etching method from damaging the light emitting device.
  • a conductive material layer 701 is formed. Due to the step formed by the sacrificial layer 6, the conductive material layer 701 includes a first portion 71 and a second portion 72 that are disconnected from each other at the edge of the sacrificial layer 6.
  • the first part 71 of the conductive material layer covers the first part 51 of the first electrode and is in direct contact with the first part 51 of the first electrode; the second part 72 of the conductive material layer is located on the sacrificial layer 6 away from the second part 52 of the first electrode.
  • One side is located on the side of the first photoresist layer 8 away from the sacrificial layer 6.
  • the manufacturing method of the light-emitting substrate further includes: stripping the sacrificial layer 6 to simultaneously remove the first photoresist layer 8 on the sacrificial layer 6 and the second portion 72 of the conductive material layer.
  • the first portion 71 of the conductive material layer remains as the auxiliary electrode 7.
  • FIGS. 3A-3D are schematic diagrams of yet another method for manufacturing a light-emitting substrate provided by an embodiment of the present disclosure. This embodiment has the following differences from the embodiment shown in FIGS. 1A-1G.
  • the auxiliary electrode is formed before the first electrode is formed, and the auxiliary electrode is located on the side of the first electrode close to the partition of the pixel defining layer.
  • the pixel defining layer 2, the first electrode 4, and the light emitting layer 3 are formed using the method described above.
  • a conductive material layer 702 covering the pixel defining layer 2 is formed.
  • an evaporation method is used to form the conductive material layer 702. Compared with a sputtering process, the evaporation method can reduce damage to the light-emitting layer 3 and is beneficial to protect the light-emitting layer 3.
  • a first photoresist layer 800 covering the conductive material layer 702 is formed, and the first photoresist layer 800 includes a first photoresist.
  • the photosensitivity of the first photoresist is the same as that of the above-mentioned second photoresist, so that the auxiliary electrode 703 and the pixel defining layer 2 have substantially the same pattern.
  • both the first photoresist and the second photoresist are positive photoresists.
  • the first photoresist and the second photoresist may also be negative photoresists.
  • a photolithography process is performed on the conductive material layer 702 using the first mask 9 and the first photoresist layer 800 to form the auxiliary electrode 70 as shown in FIG. 3C.
  • the auxiliary electrode 70 is located on a side of the first electrode 5 close to the partition 22 of the pixel defining layer.
  • the manufacturing method of the light-emitting substrate further includes: forming the first electrode 50 after the auxiliary electrode 70 is formed.
  • the first electrode 50 covers the first electrode 70 and the light emitting layer 3, and the surface 703 of the auxiliary electrode 70 facing the first electrode 5 is in direct contact with the surface 501 of the first electrode 5 facing the auxiliary electrode 7, that is, the entire surface of the surface 703 It is in direct contact with the surface 501 to reduce the contact resistance between the first electrode 50 and the auxiliary electrode 70.
  • that the entire surface of the surface 703 is in direct contact with the surface 501 means that no other layer or structure exists between any position of the entire surface of the surface 703 and the surface 501.
  • the embodiments of the present disclosure also provide a light-emitting substrate, including: a pixel defining layer, a first electrode, and an auxiliary electrode.
  • the pixel defining layer includes an opening and a partition; the first electrode includes a partition located on the partition and covering at least part of the partition. The first part of the part and the second part located in the opening; the auxiliary electrode is in surface contact with the first electrode for electrical connection and is located on the partition part; the auxiliary electrode and the pixel defining layer have substantially the same pattern.
  • FIG. 4A is a schematic plan view of a light-emitting substrate provided by an embodiment of the present disclosure
  • FIG. 4B is a schematic cross-sectional view taken along the line I-I' in FIG. 4A.
  • the light-emitting substrate provided by the embodiment of the present disclosure is obtained by the method for manufacturing the light-emitting substrate provided by the embodiment of the present disclosure.
  • the light-emitting substrate 10 may include gate lines 11 and data lines 12, which cross each other to define a plurality of light-emitting units 101 arranged in an array.
  • each light-emitting unit includes at least one light-emitting diode.
  • the gate line 11 and the data line 12 are respectively electrically connected to the driving circuit in the light-emitting unit to provide scan signals and data signals to control the light-emitting diodes in the light-emitting unit.
  • the luminous intensity and luminous intensity is provided around each of the plurality of light emitting units 101.
  • the light-emitting substrate 10 includes: a base substrate 1 and a pixel defining layer 2 provided on the base substrate 1, a first electrode 5 and an auxiliary electrode 7.
  • the pixel defining layer 2 includes an opening 21 and a partition 22.
  • the first electrode 5 includes a first portion 51 located on the partition 22 and covering at least part of the partition 22 and a second portion 52 located in the opening 21.
  • the auxiliary electrode 7 is in surface contact with the first electrode 5 for electrical connection and is located on the partition 22.
  • the provision of the auxiliary cathode is equivalent to adding a circuit connected in parallel with the first electrode.
  • the overall resistance of the cathode structure formed integrally by the auxiliary electrode 7 and the first electrode 5 can be reduced, the signal transmission speed can be increased, and the Joule heat can be reduced. It is beneficial to improve the life of the light-emitting substrate and reduce energy consumption.
  • the thickness of the first electrode is small (for example, the first electrode is made of a metal material and is light-transmissive, or the thickness of the first electrode is reduced in order to obtain an ultra-thin light-emitting substrate, etc.)
  • the resistance of the first electrode is large and It is easy to have the phenomenon of excessive resistance in some places due to the uneven thickness of the first electrode, and the auxiliary cathode can avoid or reduce this phenomenon.
  • the surface contact between the auxiliary electrode 7 and the first electrode 5 means that the surface 73 of the auxiliary electrode 7 facing the first electrode 5 is in direct contact with the surface 51 of the first electrode 5 facing the auxiliary electrode 7, that is, the entire surface 73 There are no other layers or structures between any position of the surface and the surface 51, so as to reduce the contact resistance between the auxiliary electrode 7 and the first electrode 5, and simplify the manufacturing process, for example, omit making the auxiliary electrode 7 and the first electrode. 5.
  • the auxiliary electrode 7 and the pixel defining layer 2 have basically the same pattern, that is, the auxiliary cathode 7 is located in the non-opening area of the pixel defining layer, which can improve the performance of the first electrode without affecting the light transmittance, and this can make
  • the same mask can be used to form the pixel defining layer and the auxiliary cathode, thereby saving cost, simplifying the process, and the method is applicable to a wide range of sizes of the light-emitting substrate.
  • the auxiliary electrode 7 is located on the side of the first electrode 5 away from the partition 22 of the pixel defining layer.
  • the light-emitting substrate 10 further includes a second electrode 4 and a light-emitting layer 3 located in the opening 21 of the pixel defining layer 2.
  • the light-emitting layer 3 is located between the first electrode 5 and the second electrode 4, and the second electrode 4 is opposite to the first electrode 5.
  • the material of the first electrode 5 is a metal material.
  • the metal material is, for example, a metal with a small work function, such as magnesium or silver, so as to reduce damage to the light-emitting layer 3 during the process of forming the first electrode 5 by evaporation.
  • the thickness of the first electrode 5 in the direction perpendicular to the base substrate 1 is not greater than 20 nm, so that the first electrode 5 is light-transmissive, and the light emitted by the light-emitting layer 3 exits through the first electrode 5, and the first electrode 4 It is opaque. That is, the above-mentioned light-emitting substrate is a top emission type.
  • the light-emitting layer 3 includes light-emitting diodes, and the first electrode 5 and the second electrode 4 are respectively electrically connected to the light-emitting diode device to control the working state of the light-emitting diode device.
  • Fig. 4C is another schematic cross-sectional view taken along the line I-I' in Fig. 4A.
  • the difference between the light-emitting substrate shown in FIG. 4C and the light-emitting substrate shown in FIG. 4B is that the auxiliary electrode 70 is located on the side of the first electrode 50 close to the partition 22 of the pixel defining layer.
  • the features of the light-emitting substrate that are not mentioned, such as the material of the auxiliary cathode 7, the material and thickness of the first electrode 5, and the corresponding technical effects are the same as those in the embodiment of the manufacturing method of the light-emitting substrate. Please refer to the previous description and will not repeat it here.
  • At least one embodiment of the present disclosure further provides a display device, including any light-emitting substrate provided by the embodiments of the present disclosure.
  • FIG. 5 is a schematic diagram of an electronic device provided by an embodiment of the present disclosure.
  • the electronic device 100 provided by the embodiment of the present disclosure includes any light-emitting substrate 10 provided by the embodiment of the present disclosure.
  • the electronic device 100 may be a display device, such as an organic light emitting diode (OLED).
  • OLED organic light emitting diode
  • the display device may be implemented as the following products: mobile phones, tablet computers, televisions, displays, notebook computers, digital photo frames, navigators, etc. Products or parts that display features.
  • the electronic device 100 may also be a lighting device or a decorative lamp.
  • those skilled in the art can refer to conventional techniques.

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Abstract

一种发光基板及其制作方法以及电子装置，该方法包括：利用第一掩模通过构图工艺形成像素界定层，其中，所述像素界定层包括开口和界定所述开口的分隔部；形成第一电极，其中，所述第一电极包括覆盖至少部分所述分隔部的第一部分且包括位于所述开口内的第二部分；以及利用所述第一掩模通过构图工艺形成辅助电极，其中，所述辅助电极与所述第一电极电连接，所述辅助电极位于所述分隔部上。在本公开实施例提供的发光基板的制作方法中，无需单独准备用于形成该辅助电极的掩模，简化形成辅助电极的工艺，并节省了制作掩模的成本。

Description

发光基板及其制作方法、电子装置 技术领域
本公开至少一实施例涉及一种发光基板及其制作方法以及电子装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，简称OLED)发光基板具有反应快、亮度高、色彩鲜艳、轻薄、低能耗等优点，越来越受到广泛的应用，已被应用于显示装置和发光装置等。有机发光二极管发光基板通常包括发光器件以及与发光器件电连接的阴极和阳极，通过阴极和阳极为发光器件提供电信号以控制发光器件的发光状况，从而阴极和阳极的电学性质也会影响发光器件的发光质量。
发明内容
本公开至少一实施例提供一种发光基板的制作方法，该方法包括：利用第一掩模通过构图工艺形成像素界定层，其中，所述像素界定层包括开口和界定所述开口的分隔部；形成第一电极，其中，所述第一电极包括覆盖至少部分所述分隔部的第一部分且包括位于所述开口内的第二部分；以及利用所述第一掩模通过构图工艺形成辅助电极，其中，所述辅助电极与所述第一电极电连接，所述辅助电极位于所述分隔部上。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述辅助电极的面向所述第一电极的表面与所述第一电极的面向所述辅助电极的表面直接接触。
例如，本公开至少一实施例提供的发光基板的制作方法中，在形成所述第一电极之后形成所述辅助电极，所述辅助电极位于所述第一电极的远离所述像素界定层的分隔部的一侧。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述形成所述辅助电极包括：利用所述第一掩模通过构图工艺在所述第一电极的远离所述像素界定层的一侧形成牺牲层，其中，所述牺牲层暴露所述第一电极的第一部分且覆盖所述第一电极的第二部分；形成导电材料层，其中，所述导电 材料层包括彼此断开的第一部分和第二部分；所述导电材料层的第一部分覆盖所述第一电极的第一部分且与所述第一电极的第一部分直接接触，述导电材料层的第二部分位于所述牺牲层的远离所述第一电极的第二部分的一侧；以及同时去除所述牺牲层和所述导电材料层的第二部分以将所述导电材料层的第一部分作为所述辅助电极。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述牺牲层为可剥离层，基板的制作方法还包括：将所述牺牲层剥离以同时去除位于牺牲层上的导电材料层的第二部分。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述形成所述牺牲层包括：形成覆盖所述第一电极的牺牲材料层；以及利用所述第一掩模对所述牺牲材料层执行光刻工艺以形成所述牺牲层；其中，所述牺牲层的材料包括第一光刻胶，利用第二光刻胶和所述第一掩模通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相反。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述形成所述牺牲层包括：形成覆盖所述第一电极的牺牲材料层，所述牺牲材料层为可剥离层；在所述牺牲材料层上形成第一光刻胶层；以及利用所述第一掩模和所述第一光刻胶层对所述牺牲材料层执行光刻工艺以形成所述牺牲层；其中，所述第一光刻胶层的材料为第一光刻胶，利用第二光刻胶和所述第一掩模通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相反。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述第一光刻胶为负性光刻胶，所述第二光刻胶为正性光刻胶；或者，所述第一光刻胶为正性光刻胶，所述第二光刻胶为负性光刻胶。
例如，本公开至少一实施例提供的发光基板的制作方法中，在形成所述第一电极之前形成所述辅助电极，所述辅助电极位于所述第一电极的靠近所述像素界定层的分隔部的一侧。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述形成所述辅助电极包括：形成覆盖所述像素界定层的导电材料层；以及利用所述第一掩模和第一光刻胶对所述导电材料层执行光刻工艺以形成所述辅助电极；其中，利用所述第一掩模和第二光刻胶通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相同。
例如，本公开至少一实施例提供的发光基板的制作方法中，采用蒸镀法形成所述导电材料层。
例如，本公开至少一实施例提供的发光基板的制作方法中，所述第一电极的材料为金属材料；在由所述第一电极的远离所述像素界定层的面到所述第一电极的靠近所述像素界定层的面的方向上，所述第一电极的厚度不大于20nm。
例如，本公开至少一实施例提供的发光基板的制作方法还包括：在所述像素界定层的开口内形成第二电极和发光层；其中，所述第二电极与所述第一电极相对设置，所述发光层位于所述第一电极与所述第二电极之间；所述发光层所发出的光经由所述第一电极出射。
本公开至少一实施例还提供一种发光基板，所述发光基板包括：像素界定层、第一电极和辅助电极。像素界定层包括开口和分隔部；第一电极包括位于所述分隔部上且覆盖至少部分所述分隔部的第一部分和位于所述开口内的第二部分；辅助电极与所述第一电极面接触以电连接且位于所述分隔部上；所述辅助电极与所述像素界定层具有基本相同的图案。
例如，本公开至少一实施例提供的阵列基板中，所述辅助电极位于所述第一电极的远离所述像素界定层的分隔部的一侧。
例如，本公开至少一实施例提供的阵列基板中，所述辅助电极位于所述第一电极的靠近所述像素界定层的分隔部的一侧。
例如，本公开至少一实施例提供的阵列基板中，所述第一电极的材料为金属材料；在由所述第一电极的远离所述像素界定层的面到所述第一电极的靠近所述像素界定层的面的方向上，所述第一电极的厚度不大于20nm。
例如，本公开至少一实施例提供的阵列基板中，还包括位于所述像素界定层的开口内的第二电极和发光层；所述第二电极与所述第一电极相对设置，所述发光层位于所述第一电极与所述第二电极之间；所述发光层所发出的光经由所述第一电极出射。
本公开至少一实施例还提供一种电子装置，包括本公开实施例提供的任意一种发光基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作 简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1A-1G为本公开一些实施例提供的一种发光基板的制作方法的示意图；
图2A-2D是本公开一些实施例提供的另一种发光基板的制作方法的示意图；
图3A-3D是本公开一些实施例提供的又一种发光基板的制作方法的示意图；
图4A为本公开一些实施例提供的一种发光基板的平面示意图；
图4B为沿图4A中的I-I’线的一种截面示意图；
图4C为沿图4A中的I-I’线的另一种截面示意图；
图5为本公开一些实施例提供的一种电子装置示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现在该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“内”、“外”、“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
本公开所使用的附图并不是严格按实际比例绘制，各个结构的具体尺寸和数量可根据实际需要进行确定。本公开中所描述的附图仅是结构示意图。
需要说明的是，在本公开中，可剥离层是指：能够通过剥离工艺被去除的结构层。
需要说明的是，在本公开中，辅助电极的面向第一电极的表面与第一电极的面向辅助电极的表面直接接触是指：辅助电极的面向第一电极的表面的整个面与第一电极的面向辅助电极的表面接触，即在垂直于衬底基板的方向上，辅助电极的面向第一电极的表面的整个面的任意位置与第一电极的面向辅助电极的表面之间均不存在其他的中间层或中间结构。
在有机发光二极管(OLED)基板的制作方法中，通常可以采用蒸镀掩模直接蒸镀得到辅助阴极，但是这种方案一方面需要增加一张蒸镀掩模(例如高精度金属掩模(FMM))，且蒸镀的金属材料会附着在蒸镀掩模上而难以清洗导致蒸镀掩模寿命有限，从而增加了掩模成本；另一方面，这种方法适用制作特定的中小尺寸基板，对于大尺寸基板，不容易实现或者成本很高。或者，在一些有机发光二极管基板的制作方法中，将辅助阴极制作在封装盖板上，在对盒时将辅助阴极与阴极电连接，这种方法需要单独制作用于形成辅助阴极的掩模并且不适用于薄膜封装。又或者，在一些有机发光二极管基板的制作方法中，在透明阴极上先制作一层绝缘层并制作贯穿该绝缘层的过孔，在绝缘层上制作辅助阴极，辅助阴极与透明阴极通过过孔连接，这种方案需要增加制作绝缘层和过孔的步骤，单独制作用于形成过孔的掩模和用于制作辅助阴极的掩模，大幅增加了制作成本。
本公开至少一实施例提供一种发光基板的制作方法，该方法包括：利用第一掩模通过构图工艺形成像素界定层，其中，所述像素界定层包括开口和界定所述开口的分隔部；形成第一电极，其中，所述第一电极包括覆盖至少部分所述分隔部的第一部分且包括位于所述开口内的第二部分；以及利用所述第一掩模通过构图工艺形成辅助电极，其中，所述辅助电极与所述第一电极电连接，所述辅助电极位于所述分隔部上。
在本公开一些实施例提供的发光基板的制作方法中，利用与同一掩模形成像素界定层和辅助电极，从而无需单独准备用于形成该辅助电极的掩模，简化形成辅助电极的工艺，并节省了制作掩模的成本。设置该辅助电极相当于增加了与第一电极并联的电路，如此，能够减小第一电极区域的总体电阻(指第一电极与辅助电极整体形成的电极结构的总电阻)，提高信号的传输速度，还可以减少焦耳热从而有利于提高发光基板的寿命以及降低能耗。例如，尤其在第一电极的厚度较小时(例如第一电极为金属材料且是透光的，或者为了获得超薄发光基板而减小第一电极的厚度等情况)，第一电极的电 阻较大且容易存在由于第一电极厚度不均而在某些地方电阻过大的现象，该辅助阴极能够避免或减弱这一现象。此外，在像素界定层的分隔部(非开口区)上形成区制作该辅助阴极，可以在不影响透光率的前提下，改善第一电极的性能。本公开实施例提供的发光基板的制作方法适用于制作各种尺寸的发光基板，适用的基板尺寸范围广。
示范性地，图1A-1G为本公开一些实施例提供的一种发光基板的制作方法的示意图。
例如，该发光基板的制作方法包括：利用第一光刻胶和第一掩模形成上述辅助电极。在形成辅助电极之前，该发光基板的制作方法还包括：利用第一掩模通过构图工艺形成像素界定层，例如利用第二光刻胶和第一掩模通过光刻工艺形成所述像素界定层。如图1A所示，提供衬底基板1，在衬底基板1上形成像素界定材料层20。例如，衬底基板1包括驱动电路，该驱动电路用于驱动之后形成的发光二极管器件。例如，在所述发光基板为显示基板的情形，显示基板包括阵列布置的多个像素单元，驱动电路为每个像素单元的像素电路，该像素电路包括多个晶体管、电容等，例如可以为2T1C(即两个晶体管一个电容)型、4T2C型等，本公开的实施例对于驱动电路不作限制。例如，像素界定材料层20的材料包括第二光刻胶，例如可以采用涂覆的方法形成像素界定材料层20。在本实施例中，以第二光刻胶为正性光刻胶为例对发光基板的制作方法进行说明。利用第一掩模9对像素界定材料层20进行曝光。第一掩模9包括透光区A和非透光区B。然后，再执行显影工序形成如图1B所示的像素界定层2。像素界定层2包括开口21和界定开口21的分隔部22。当然，在其他的实施例中，像素界定材料层20的材料也可以不是光刻胶，例如像素界定材料层20的材料为无机材料，该无机材料例如包括氮化硅、氧化硅或氮氧化硅中的至少之一。这种情况下，例如采用沉积法等方法形成像素界定材料层20，发光基板的制作方法还包括在像素界定材料层20上形成包括第二光刻胶的第二光刻胶层(图未示出)，然后利用第一掩模9和第二光刻胶层对像素界定材料层20执行曝光、显影和刻蚀工艺，从而形成如图1B所示的像素界定层2。本公开实施例对像素界定层2的材料和具体的制作方法不作限定。
如图1C所示，发光基板的制作方法还包括：在像素界定层2的开口21内形成第二电极4和发光层3以及形成第一电极5。例如，第一电极5、发 光层3和第二电极4构成发光二极管。例如，发光层3可以为有机发光层或无机发光层，对应地该发光二极管为有机发光二极管(OLED)或无机发光二极管，有机发光层可以为复合结构层，例如包括层叠的电子注入层、电子传输层、发光功能层、空穴传输层、空穴注入层，电子经电子注入层和电子传输层到达发光功能层，空穴经空穴注入层和空穴传输层到达发光功能层，电子和空穴在发光功能层相遇复合形成激子，然后激发发光。发光功能层可以包括各种适当类型的材料，例如荧光发光材料或磷光发光材料，例如红光发光材料、绿光发光材料、蓝光发光材料或白光发光材料等。本公开的实施例对于发光层的材料不作限制。
例如，在图1B所示的情形，依次形成第二电极4、发光层3和第一电极5。例如，第二电极4的材料为金属材料，可通过溅射法或蒸镀法形成第二电极4，然后在第二电极4上形成发光二极管的发光层，第二电极4与发光二极管器件的驱动电路电连接。第二电极4与第一电极5相对设置，发光层3位于第一电极5与第二电极4之间。第一电极5包括覆盖至少部分分隔部22的第一部分51且包括位于开口21内的第二部分52。例如，第一电极5的材料为金属材料。该金属材料例如为功函数较小的金属，例如镁或银，以在通过蒸镀形成第一电极5的过程中减小对发光层3的损伤。例如，第一电极5在垂直于衬底基板1方向上的厚度不大于20nm，以使得第一电极5是透光的，发光层3所发出的光经由第一电极5出射，第一电极4为不透光的。即上述发光基板为顶发射型。当然，在其他一些实施例中，发光基板也可以为底发光型，即发光层3所发出的光经由第二电极4出射。本公开至少一实施例以顶发光型为例进行说明。当然，本公开实施例对形成像素界定层2的步骤与形成第一电极4和发光层3的步骤的顺序不作限定。
发光基板的制作方法还包括：利用第一掩模通过构图工艺形成辅助电极，该辅助电极与第一电极电连接，辅助电极位于分隔部上。
例如，在一个实施例中，在形成第一电极之后形成辅助电极，辅助电极位于第一电极的远离像素界定层的分隔部的一侧。
示例性地，如图1D所示，在第一电极5的远离像素界定层2的一侧形成覆盖第一电极5的牺牲材料层60。例如牺牲材料层60的材料包括第一光刻胶，第一光刻胶的感光性与上述的第二光刻胶的感光性相反。在本实施例中，第一光刻胶为负性光刻胶，对应地，上述第二光刻胶为正性光刻胶。或 者，在其他的实施例中，第一光刻较为正性光刻胶，对应地，第二光刻胶为负性光刻胶。例如通过涂覆法形成牺牲材料层60。
然后，利用第一掩模9对牺牲材料层60执行光刻工艺以形成牺牲层。例如利用第一掩模9对牺牲材料层60执行曝光、显影工序，以形成如图1E所示的牺牲层6。即利用第一掩模9通过构图工艺在第一电极5的远离像素界定层2的一侧形成牺牲层6。该第一掩模9与用于形成像素界定层2的光刻工艺中所适用的第一掩模9为同一掩模。由于第一光刻胶的感光性与上述的第二光刻胶的感光性相反，因此，第一光刻胶牺牲层6的图案与像素界定层2的图案互补。牺牲层6暴露第一电极的第一部分51且覆盖第一电极的第二部分52。
由于光刻胶层可被剥离，例如牺牲材料层60为第一光刻胶，则牺牲材料层60为可剥离层，即牺牲层为可剥离层。可剥离层可以通过剥离工艺去除。
如图1F所示，形成导电材料层701。例如，通过蒸镀法形成导电材料层701，相比于溅射工艺，蒸镀法能够减小对发光层3的损伤，有利于保护发光层3。由于牺牲层6所形成的台阶，导电材料层701包括在牺牲层6的边缘处彼此断开的第一部分71和第二部分72。导电材料层的第一部分71覆盖第一电极5的第一部分51且与第一电极的第一部分51直接接触，导电材料层的第二部分72位于牺牲层6的远离第一电极的第二部分52的一侧。需要说明的是，本公开实施例中的“彼此断开”是指：导电材料层的第一部分71和导电材料层的第二部分72彼此不互相接触，从而不再连接。
如图1G所示，发光基板的制作方法还包括：将牺牲层6剥离以同时去除位于牺牲层6上的导电材料层的第二部分72，从而保留导电材料层的第一部分71以作为辅助电极7。即同时去除牺牲层和导电材料层的第二部分以将导电材料层的第一部分作为所述辅助电极。由于剥离工艺的操作简单，因此通过将牺牲层6剥离而同时去除位于牺牲层6上的导电材料层的第二部分72的步骤有利于简化工艺，提高生产效率。
如图1G所示，辅助电极7的面向第一电极5的表面73与第一电极5的面向辅助电极7的表面51直接接触，即表面73的整个面与表面51直接接触，以减小第一电极5与辅助电极7的接触电阻，并且可以减小由第一电极5与辅助电极7整体构成的导电结构的总体电阻，从而降低该总体电阻导致 的电压降以及工作过程中的电阻发热。
需要说明的是，本公开实施例中，表面73的整个面与表面51直接接触是指表面73的整个面的任意位置与表面51之间均不存在其他的层或结构。
需要说明的是，辅助电极7与像素界定层2具有基本相同的图案。例如，在对像素界定材料层20进行曝光的过程中以及对牺牲材料层60进行曝光的过程中，可以通过采用足够强的光照强度使得形成的像素界定层的分隔部22的在垂直于衬底基板1方向上的截面形状以及牺牲层6在垂直于衬底基板1方向上的截面形状为矩形或近似矩形(如图1E所示)，从而可使得辅助电极7与像素界定层2具有相同的图案。当然，制作过程中也会存在误差使得辅助电极7的图案的线宽与像素界定层2的图案的线宽不完全相同。
例如，在上述第一光刻胶为负性光刻胶，第二光刻胶为正性光刻胶的情况下，形成的牺牲层6在垂直于衬底基板1方向上的截面形状可以为梯形，该梯形的远离衬底基板1的上底大于其靠近衬底基板1的下底(图未示出)，则后续形成的辅助电极的在其所在平面的某一方向上的宽度可能会小于像素界定层2的在所述某一方向上的宽度。又例如，在第一光刻较为正性光刻胶，第二光刻胶为负性光刻胶的情况下，形成的牺牲层6在垂直于衬底基板1方向上的截面形状可以为梯形，该梯形的远离衬底基板1的上底小于其靠近衬底基板1的下底(图未示出)，则后续形成的辅助电极的在其所在平面的某一方向上的宽度大于像素界定层2的在所述某一方向上的宽度。由于工艺上的尺寸误差造成的辅助电极7与像素界定层2具有基本相同的图案的情况均包括在本公开所保护的范围内。
图2A-2D是本公开一实施例提供的另一种发光基板的制作方法的示意图。该实施例与图1A-1G所示的实施例具有以下区别。在形成图1C所示的结构之后，如图2A所示，形成覆盖第一电极5的牺牲材料层60。牺牲材料层60为可剥离层，例如牺牲材料层60的材料不包括光刻胶材料，这种情况下，牺牲材料层60可以为除了光刻胶层之外的可剥离层，例如可剥离的有机涂层，本领域技术人员可自行选择。在形成牺牲材料层60之后，在牺牲材料层60上形成第一光刻胶材料层80。第一光刻胶层80的材料包括第一光刻胶。第一光刻胶的感光性与第二光刻胶的感光性相反。利用第一掩模9和第一光刻胶材料层80对牺牲材料层60执行光刻工艺以形成牺牲层。例如对牺牲材料层60执行曝光、显影和刻蚀工艺形成如图2B所示的第一光刻胶 层8和牺牲层6。例如采用干刻法对牺牲材料层60进行刻蚀，以防止湿刻法中的刻蚀剂对发光器件造成损伤。
如图2C所示，在形成导电材料层701。由于牺牲层6所形成的台阶，，导电材料层701包括在牺牲层6的边缘处彼此断开的第一部分71和第二部分72。导电材料层的第一部分71覆盖第一电极的第一部分51且与第一电极的第一部分51直接接触；导电材料层的第二部分72位于牺牲层6的远离第一电极的第二部分52的一侧且位于第一光刻胶层8的远离牺牲层6的一侧。
如图2D所示，发光基板的制作方法还包括：将牺牲层6剥离以同时去除位于牺牲层6上的第一光刻胶层8和导电材料层的第二部分72。从而保留导电材料层的第一部分71以作为辅助电极7。
对于图2A-2D所示的实施例，没有提及的工艺步骤等技术特征均与图1A-1G所示的实施例中的描述相同，请参考之前的描述。
图3A-3D是本公开一实施例提供的又一种发光基板的制作方法的示意图。该实施例与图1A-1G所示的实施例具有以下区别。在图3A-3D所示的实施例中，在形成第一电极之前形成辅助电极，辅助电极位于第一电极的靠近像素界定层的分隔部的一侧。
示范性地，如图3A所示，采用之前所述的方法形成像素界定层2、第一电极4和发光层3。
然后，如图3B所示，形成覆盖像素界定层2的导电材料层702。例如，采用蒸镀法形成导电材料层702，相比于溅射工艺，蒸镀法能够减小对发光层3的损伤，有利于保护发光层3。形成覆盖导电材料层702的第一光刻胶层800，第一光刻胶层800包括第一光刻胶。第一光刻胶的感光性与上述的第二光刻胶的感光性相同，以使得辅助电极703与像素界定层2具有基本相同的图案。例如，在本实施例中，第一光刻胶和第二光刻胶均为正性光刻胶。当然，在本公开的其他是实施例中，第一光刻胶和第二光刻胶也可以均为负性光刻胶。然后，利用第一掩模9和第一光刻胶层800对导电材料层702执行光刻工艺以形成如图3C所示的辅助电极70。辅助电极70位于第一电极5的靠近像素界定层的分隔部22的一侧。
如图3D所示，发光基板的制作方法还包括：在形成辅助电极70之后，形成第一电极50。第一电极50覆盖第一电极70与发光层3，并且，辅助电 极70的面向第一电极5的表面703与第一电极5的面向辅助电极7的表面501直接接触，即表面703的整个面与表面501直接接触，以减小第一电极50与辅助电极70的接触电阻。需要说明的是，本公开实施例中，表面703的整个面与表面501直接接触是指表面703的整个面的任意位置与表面501之间均不存在其他的层或结构。
对于图3A-3D所示的实施例，没有提及的工艺步骤和其他技术特征(例如第一电极的材料、辅助电极的材料等)均与图1A-1G所示的实施例中的描述相同，请参考之前的描述。
本公开实施例还提供一种发光基板，包括：像素界定层、第一电极和辅助电极，像素界定层包括开口和分隔部；第一电极包括位于所述分隔部上且覆盖至少部分所述分隔部的第一部分和位于所述开口内的第二部分；辅助电极与所述第一电极面接触以电连接且位于所述分隔部上；所述辅助电极与所述像素界定层具有基本相同的图案。
图4A为本公开一实施例提供的一种发光基板的平面示意图，图4B为沿图4A中的I-I’线的一种截面示意图。本公开实施例提供的发光基板为通过本公开实施例提供的发光基板的制作方法获得。
如图4A和4B所示，例如，发光基板10可以包括栅线11和数据线12，栅线11和数据线12彼此交叉以限定出呈阵列排布的多个发光单元101，该发光单元101例如为像素单元，每个发光单元包括至少一个发光二极管，该栅线11和数据线12分别与发光单元中的驱动电路电连接，以提供扫描信号以及数据信号，以控制发光单元中的发光二极管的发光与否以及发光强度。例如，像素界定层7(70)围绕多个发光单元101中的每个设置。例如，发光基板10包括：衬底基板1和设置于衬底基板1上的像素界定层2、第一电极5和辅助电极7。像素界定层2包括开口21和分隔部22。第一电极5包括位于分隔部22上且覆盖至少部分分隔部22的第一部分51和位于开口21内的第二部分52。辅助电极7与第一电极5面接触以电连接且位于分隔部22上。设置该辅助阴极相当于增加了与第一电极并联的电路，如此，能够减小辅助电极7与第一电极5整体形成的阴极结构的总体电阻，提高信号的传输速度，还可以减少焦耳热从而有利于提高发光基板的寿命以及降低能耗。尤其在第一电极的厚度较小时(例如第一电极为金属材料且是透光的，或者为了获得超薄发光基板而减小第一电极的厚度等情况)，第一电极的电阻较 大且容易存在由于第一电极厚度不均而在某些地方电阻过大的现象，该辅助阴极能够避免或减弱这一现象。
需要说明的是，辅助电极7与第一电极5面接触是指辅助电极7的面向第一电极5的表面73与第一电极5的面向辅助电极7的表面51直接接触，即表面73的整个面的任意位置与表面51之间均不存在其他的层或结构，以减小辅助电极7与第一电极5的接触电阻，并且便于简化制作工艺，例如省略制作连接辅助电极7与第一电极5的过孔的工艺。辅助电极7与像素界定层2具有基本相同的图案，即辅助阴极7位于像素界定层的非开口区，可以在不影响透光率的前提下，改善第一电极的性能，并且，这能够使得在制作发光基板10的工艺中，可以利用同一掩模形成像素界定层和辅助阴极，从而节省成本，简化工艺并且该方法适用的发光基板的尺寸范围广。
例如，辅助电极7位于第一电极5的远离像素界定层的分隔部22的一侧。
例如，发光基板10还包括位于像素界定层2的开口21内的第二电极4和发光层3。发光层3位于第一电极5和第二电极4之间，第二电极4与第一电极5相对设置。例如，第一电极5的材料为金属材料。该金属材料例如为功函数较小的金属，例如镁或银，以在通过蒸镀形成第一电极5的过程中减小对发光层3的损伤。例如，第一电极5在垂直于衬底基板1方向上的厚度不大于20nm，以使得第一电极5是透光的，发光层3所发出的光经由第一电极5出射，第一电极4为不透光的。即上述发光基板为顶发射型。例如，发光层3包括发光二极管，第一电极5和第二电极4分别与发光二极管器件电连接以控制发光二极管器件工作状态。
图4C为沿图4A中的I-I’线的另一种截面示意图。图4C所示的发光基板与图4B所示的发光基板的区别在于，辅助电极70位于第一电极50的靠近像素界定层的分隔部22的一侧。
本实施例中，对于没有提及的发光基板的特征，例如辅助阴极7的材料、第一电极5的材料和厚度等以及相应的技术效果与上述发光基板的制作方法的实施例中的相同，请参考之前的描述，在此不再赘述。
本公开至少一实施例还提供一种显示装置，包括本公开实施例提供的任意一种发光基板。
示例性地，图5为本公开一实施例提供的一种电子装置示意图。如图5 所示，本公开实施例提供的电子装置100包括本公开实施例提供的任意一种发光基板10。例如，该电子装置100可以为显示装置，例如为有机发光二极管(OLED)该显示装置可以实现为如下的产品：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该电子装置100也可以为照明装置或装饰性灯具等。关于显示装置的其他结构，本领域技术人员可参考常规技术。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。

Claims (19)

  1. 一种发光基板的制作方法，包括：
    利用第一掩模通过构图工艺形成像素界定层，其中，所述像素界定层包括开口和界定所述开口的分隔部；
    形成第一电极，其中，所述第一电极包括覆盖至少部分所述分隔部的第一部分且包括位于所述开口内的第二部分；以及
    利用所述第一掩模通过构图工艺形成辅助电极，其中，所述辅助电极与所述第一电极电连接，所述辅助电极位于所述分隔部上。
  2. 根据权利要求1所述的发光基板的制作方法，其中，
    所述辅助电极的面向所述第一电极的表面与所述第一电极的面向所述辅助电极的表面直接接触。
  3. 根据权利要求1或2所述的发光基板的制作方法，其中，
    在形成所述第一电极之后形成所述辅助电极，所述辅助电极位于所述第一电极的远离所述像素界定层的分隔部的一侧。
  4. 根据权利要求3所述的发光基板的制作方法，其中，
    所述形成所述辅助电极包括：
    利用所述第一掩模通过构图工艺在所述第一电极的远离所述像素界定层的一侧形成牺牲层，其中，所述牺牲层暴露所述第一电极的第一部分且覆盖所述第一电极的第二部分；
    形成导电材料层，其中，所述导电材料层包括彼此断开的第一部分和第二部分；所述导电材料层的第一部分覆盖所述第一电极的第一部分且与所述第一电极的第一部分直接接触，述导电材料层的第二部分位于所述牺牲层的远离所述第一电极的第二部分的一侧；以及
    同时去除所述牺牲层和所述导电材料层的第二部分以将所述导电材料层的第一部分作为所述辅助电极。
  5. 根据权利要求4所述的发光基板的制作方法，其中，所述牺牲层为可剥离层，所述发光基板的制作方法还包括：将所述牺牲层剥离以同时去除位于牺牲层上的导电材料层的第二部分。
  6. 根据权利要求4或5所述的发光基板的制作方法，其中，
    所述形成所述牺牲层包括：
    形成覆盖所述第一电极的牺牲材料层；以及
    利用所述第一掩模对所述牺牲材料层执行光刻工艺以形成所述牺牲层；
    其中，所述牺牲层的材料包括第一光刻胶，利用第二光刻胶和所述第一掩模通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相反。
  7. 根据权利要求4或5所述的发光基板的制作方法，其中，
    所述形成所述牺牲层包括：
    形成覆盖所述第一电极的牺牲材料层，所述牺牲材料层为可剥离层；
    在所述牺牲材料层上形成第一光刻胶层；以及
    利用所述第一掩模和所述第一光刻胶层对所述牺牲材料层执行光刻工艺以形成所述牺牲层；其中，
    所述第一光刻胶层的材料包括第一光刻胶，利用第二光刻胶和所述第一掩模通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相反。
  8. 根据权利要求6或7所述的发光基板的制作方法，其中，
    所述第一光刻胶为负性光刻胶，所述第二光刻胶为正性光刻胶；或者，所述第一光刻胶为正性光刻胶，所述第二光刻胶为负性光刻胶。
  9. 根据权利要求1或2所述的发光基板的制作方法，其中，
    在形成所述第一电极之前形成所述辅助电极，所述辅助电极位于所述第一电极的靠近所述像素界定层的分隔部的一侧。
  10. 根据权利要求9所述的发光基板的制作方法，其中，
    所述形成所述辅助电极包括：
    形成覆盖所述像素界定层的导电材料层；以及
    利用所述第一掩模和第一光刻胶对所述导电材料层执行光刻工艺以形成所述辅助电极；
    其中，利用所述第一掩模和第二光刻胶通过光刻工艺形成所述像素界定层，所述第一光刻胶的感光性与所述第二光刻胶的感光性相同。
  11. 根据权利要求5或10所述的发光基板的制作方法，其中，
    采用蒸镀法形成所述导电材料层。
  12. 根据权利要求1-11任一所述的发光基板的制作方法，其中，
    所述第一电极的材料为金属材料；在由所述第一电极的远离所述像素界定层的面到所述第一电极的靠近所述像素界定层的面的方向上，所述第一电极的厚度不大于20nm。
  13. 根据权利要求1-12任一所述的发光基板的制作方法还包括：
    在所述像素界定层的开口内形成第二电极和发光层；其中，
    所述第二电极与所述第一电极相对设置，所述发光层位于所述第一电极与所述第二电极之间；
    所述发光层所发出的光经由所述第一电极出射。
  14. 一种发光基板，包括：
    像素界定层，包括开口和分隔部；
    第一电极，包括位于所述分隔部上且覆盖至少部分所述分隔部的第一部分和位于所述开口内的第二部分；以及
    辅助电极，与所述第一电极面接触以电连接且位于所述分隔部上；其中，
    所述辅助电极与所述像素界定层具有基本相同的图案。
  15. 根据权利要求14所述的发光基板，其中，所述辅助电极位于所述第一电极的远离所述像素界定层的分隔部的一侧。
  16. 根据权利要求14所述的发光基板，其中，所述辅助电极位于所述第一电极的靠近所述像素界定层的分隔部的一侧。
  17. 根据权利要求14-16任一所述的发光基板，其中，所述第一电极的材料为金属材料；在由所述第一电极的远离所述像素界定层的面到所述第一电极的靠近所述像素界定层的面的方向上，所述第一电极的厚度不大于20nm。
  18. 根据权利要求14-17任一所述的发光基板，还包括位于所述像素界定层的开口内的第二电极和发光层；其中，
    所述第二电极与所述第一电极相对设置，所述发光层位于所述第一电极与所述第二电极之间；
    所述发光层所发出的光经由所述第一电极出射。
  19. 一种电子装置，包括权利要求14-18任一所述的发光基板。
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Publication number Priority date Publication date Assignee Title
CN110993643A (zh) * 2019-11-05 2020-04-10 深圳市华星光电半导体显示技术有限公司 Oled显示面板
CN110634929B (zh) * 2019-09-26 2022-02-08 京东方科技集团股份有限公司 显示基板及其制备方法、亮度补偿方法、显示装置
CN111668386A (zh) * 2020-06-18 2020-09-15 京东方科技集团股份有限公司 制作显示背板的方法、显示背板和显示装置
CN113270558A (zh) * 2021-05-13 2021-08-17 Tcl华星光电技术有限公司 显示面板及其制作方法、显示装置
CN113659058B (zh) * 2021-08-20 2023-10-20 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060017375A1 (en) * 2004-07-22 2006-01-26 Sharp Kabushiki Kaisha Organic light emitting element, display device including the same and method for manufacturing organic light emitting element
CN106654047A (zh) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled显示面板及其制作方法
CN106992204A (zh) * 2017-04-25 2017-07-28 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示装置
US20180233703A1 (en) * 2015-10-13 2018-08-16 Samsung Display Co., Ltd. Organic light emitting display panel and method of manufacturing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105304478A (zh) * 2015-10-15 2016-02-03 京东方科技集团股份有限公司 图案化金属膜层的方法、晶体管和阵列基板的制备方法
KR102581258B1 (ko) * 2016-06-10 2023-09-22 삼성디스플레이 주식회사 유기발광표시장치 및 유기발광표시장치의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060017375A1 (en) * 2004-07-22 2006-01-26 Sharp Kabushiki Kaisha Organic light emitting element, display device including the same and method for manufacturing organic light emitting element
US20180233703A1 (en) * 2015-10-13 2018-08-16 Samsung Display Co., Ltd. Organic light emitting display panel and method of manufacturing the same
CN106654047A (zh) * 2016-12-22 2017-05-10 武汉华星光电技术有限公司 Oled显示面板及其制作方法
CN106992204A (zh) * 2017-04-25 2017-07-28 京东方科技集团股份有限公司 一种oled阵列基板及其制备方法、显示装置

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