WO2018086370A1 - 有机电致发光器件基板、显示装置及制造方法 - Google Patents

有机电致发光器件基板、显示装置及制造方法 Download PDF

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WO2018086370A1
WO2018086370A1 PCT/CN2017/092968 CN2017092968W WO2018086370A1 WO 2018086370 A1 WO2018086370 A1 WO 2018086370A1 CN 2017092968 W CN2017092968 W CN 2017092968W WO 2018086370 A1 WO2018086370 A1 WO 2018086370A1
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pixel
organic light
electroluminescent device
organic electroluminescent
substrate
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PCT/CN2017/092968
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English (en)
French (fr)
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张微
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京东方科技集团股份有限公司
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Priority to US15/757,699 priority Critical patent/US10665793B2/en
Publication of WO2018086370A1 publication Critical patent/WO2018086370A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiments of the present disclosure relate to an organic electroluminescent device substrate, a display device, and a method of fabricating the same.
  • OLED Organic Light Emitting Diode
  • the OLED display backplane includes an array substrate and an organic light emitting device, and the organic light emitting device includes an anode, an organic light emitting layer, a cathode, and the like.
  • the array substrate includes a driving circuit formed using a thin film transistor (TFT).
  • TFT thin film transistor
  • a pixel defining layer (PDL) is formed on the array substrate to partition each pixel region, and each pixel region is, for example, an opening, and one organic light emitting device is disposed in each opening.
  • TFT thin film transistor
  • PDL pixel defining layer
  • the display field is becoming more and more strict in terms of power consumption, efficiency, and role-bias. If the cathode of the organic light-emitting device is thin, the color shift can be improved, and the transmittance of the organic light-emitting device can be improved while the cathode transmittance is improved.
  • At least one embodiment of the present disclosure provides an organic electroluminescent device substrate, including: a substrate substrate; a pixel defining layer disposed on the substrate substrate, wherein the pixel defining layer defines a plurality of pixel regions, each pixel region being The base substrate has a top opening and a bottom opening in a thickness direction, and a bottom opening is formed in the top opening such that each pixel region has a slope from the top opening to the bottom opening, and a top opening boundary of the adjacent pixel region Intersecting with each other; an organic light emitting device disposed in each of the pixel regions.
  • the organic light emitting device includes an anode formed in a bottom opening of the pixel region, an organic light emitting layer formed on the anode, and an organic light emitting layer formed on the organic light emitting layer cathode.
  • a pixel A defining layer is formed over the anode such that in each of the pixel regions, the anode is partially exposed from the bottom opening.
  • the slope of the slope of the pixel defining layer in each pixel region is 5 to 25 degrees.
  • the cathodes of the organic light emitting devices of adjacent pixel regions are electrically connected to each other.
  • the organic light emitting device is configured to emit at least one of red light, green light, or blue light.
  • the organic electroluminescent device substrate provided by at least one embodiment of the present disclosure may further include spacers that are spaced apart and dispersedly disposed on the pixel defining layer.
  • the spacers are symmetrically disposed with respect to a boundary position of a top opening of an adjacent one of the pixel regions.
  • the organic electroluminescent device substrate provided in at least one embodiment of the present disclosure may further include a driving circuit layer, wherein the driving circuit layer includes a driving transistor, and the driving transistor and the organic light emitting of each of the pixel regions The anode of the device is electrically connected.
  • the driving circuit layer includes a driving transistor, and the driving transistor and the organic light emitting of each of the pixel regions The anode of the device is electrically connected.
  • At least one embodiment of the present disclosure also provides an organic electroluminescence display device comprising any of the above organic electroluminescent device substrates.
  • the organic electroluminescent display device provided by at least one embodiment of the present disclosure may further include an opposite substrate disposed on the organic electroluminescent device substrate.
  • At least one embodiment of the present disclosure further provides a method of fabricating an organic electroluminescent device substrate, comprising: providing a substrate; forming a pixel defining layer on the substrate, wherein the pixel defining layer defines a plurality of pixel regions, each The pixel regions have a top opening and a bottom opening in a thickness direction of the base substrate, and a bottom opening is formed in the top opening such that each pixel region has a slope from the top opening to the bottom opening, and the top of the adjacent pixel region The boundaries of the openings intersect each other; an organic light emitting device is formed in each of the pixel regions.
  • an organic light emitting device in a method of fabricating an organic electroluminescent device substrate provided by at least one embodiment of the present disclosure, includes an anode formed in a bottom opening of a pixel region, an organic light emitting layer formed on the anode, and an organic light emitting layer formed on the anode The cathode on the layer.
  • a pixel defining layer is formed on a substrate by exposure to different gray scales so that each The pixel area has a slope from the top opening to the bottom opening.
  • an anode, an organic light-emitting layer, and a cathode of the organic light-emitting device are sequentially formed in each of the pixel regions.
  • an organic light emitting layer is formed by vapor deposition using an evaporation mask, and an opening on the vapor deposition mask is the same as a top opening of the pixel region. Or basically the same.
  • the organic light emitting layer is an organic light emitting layer that emits red, green, or blue light.
  • 1A is a schematic structural view of a pixel defining layer of an organic electroluminescent device substrate
  • FIG. 1B is a schematic cross-sectional view showing different parts of the organic electroluminescent device substrate shown in FIG. 1A;
  • 2A is a partial cross-sectional structural view of a substrate of an organic electroluminescent device according to at least one embodiment of the present disclosure
  • 2B is a schematic cross-sectional view of an organic electroluminescent device according to at least one embodiment of the present disclosure
  • 3A is a schematic structural diagram of a pixel defining layer of an organic electroluminescent device according to at least one embodiment of the present disclosure
  • 3B is a schematic cross-sectional structural view of different parts of the organic electroluminescent device substrate shown in FIG. 3A;
  • FIG. 4 is a schematic structural diagram of a top-mounted OLED device according to at least one embodiment of the present disclosure
  • FIG. 5 is a schematic diagram showing a slope angle of an opening region of a pixel defining layer according to at least one embodiment of the present disclosure
  • FIG. 6 is a schematic diagram of an organic electroluminescent display device according to at least one embodiment of the present disclosure.
  • FIG. 7 is a method of manufacturing an organic electroluminescent device substrate according to at least one embodiment of the present disclosure Schematic diagram of the process
  • FIGS. 8A-8C are schematic structural diagrams of a pixel mask provided by at least one embodiment of the present disclosure.
  • FIG. 9 is a schematic flow chart of a method of fabricating an organic electroluminescent device substrate according to at least one embodiment of the present disclosure.
  • a Pixel Defined Layer defines an open area of a pixel area, and includes a relatively square hole in a position of a corresponding pixel area in the PDL layer according to a shape of the pixel area.
  • the thickness of the cathode needs to be made thinner, thus placing new demands on the shape of the opening area of the PDL.
  • FIG. 1A is a schematic structural view of a pixel defining layer of an organic electroluminescent device substrate
  • FIG. 1B is a schematic cross-sectional view of different portions of FIG. 1A, wherein a-a', b-b', c-c in FIG. 1B
  • the cross-sectional views shown by ', d-d', e-e' are taken along the cutting lines a-a', b-b', c-c', d-d', e-e' of Fig. 1A, respectively.
  • the pixel defines the cross section of the layer.
  • the organic electroluminescent device substrate 100 includes a plurality of pixel regions arranged in an array, including pixel regions forming red sub-pixels (R), green sub-pixels (G), and blue sub-pixels (B). .
  • the pixel defining layer 110 has an opening area corresponding to each pixel area, and the opening area in FIG. 1B is respectively formed with, for example, corresponding to a red sub-pixel (R), a green sub-pixel (G), and a blue sub- The anodes 120, 130 and 140 of the organic light-emitting device of the pixel (B).
  • the opening area of the pixel defining layer 110 corresponding to each pixel area includes a top opening and a bottom opening in the thickness direction of the base substrate; the boundaries of the top openings of the adjacent pixel areas are at a certain distance from each other, so the top opening occupies the array
  • the area of the substrate is small, causing the slope of the top opening to the bottom opening in the pixel area defined by the pixel defining layer 110 to be steep.
  • a land portion is formed in the middle of the top opening of the adjacent pixel region, and the spacer 150 may be disposed on the intermediate platform portion of the top opening of the adjacent pixel region.
  • an organic light-emitting layer and a cathode on the array substrate on which the pixel defining layer is formed.
  • an organic light-emitting layer for emitting light of different colors is formed by an evaporation method.
  • a common cathode can extend over the entire array substrate. If the cathode is thin, there may be a problem that the cathode film layer is broken and discontinuous, thereby causing poor cathode lap joint and increased resistance of the cathode, so that the efficiency of the obtained organic light-emitting device is lowered and power consumption is increased, and even directly The open circuit causes the display device to be unlit, so that its display function cannot be normally realized.
  • FIG. 2A is a schematic structural diagram of an organic electroluminescent device substrate according to at least one embodiment of the present disclosure.
  • the organic electroluminescent device substrate is shown in FIG. 2A.
  • a substrate substrate 1, a pixel defining layer 2 disposed on the substrate substrate 1, and an organic light emitting device (not shown) disposed in each of the pixel regions defined by the pixel defining layer 2 are included.
  • pixel defining layer 2 defines a plurality of pixel regions, which may be distributed in a matrix, which may be defined to emit light of the same or different colors.
  • the pixel defining layer 2 has a top opening 8 and a bottom opening 7 in the thickness direction of the base substrate 1 corresponding to the opening area of each of the pixel regions, and the bottom opening 7 is formed in the top opening 8 so that each pixel region has a top opening 8 To the slope 21 of the bottom opening 7, and the boundaries of the top openings 8 of adjacent pixel regions intersect each other, that is, the adjacent top opening boundaries coincide with each other with no or substantially no flat regions therebetween.
  • the projections of the bottom opening 7 and the top opening 8 on the plane in which the base substrate 1 is located at least partially do not overlap, such that the bottom opening 7 is formed in the top opening 8 Inside.
  • FIG. 2B is a schematic cross-sectional view of an organic electroluminescent device according to at least one embodiment of the present disclosure. As shown in FIG.
  • the organic light emitting device may include an anode 4 formed in the bottom opening 7 of the pixel region, an organic light emitting layer 5 formed on the anode 4, and an organic light emitting layer 5 formed thereon.
  • the organic light-emitting layer 5 is formed in a pixel region defined by the pixel defining layer 2, and the cathode 6, for example, a common cathode, is shared by a plurality of pixel regions adjacent to each other, thereby crossing adjacent pixel regions. The boundary between the pixels covering the pixel area defines the slope 21 of the layer 2.
  • the organic light emitting device may include a cathode, an organic light emitting layer 5, and an anode 4 which are sequentially formed on the base substrate 1, and in this example, the anode 4 may be formed on the pixel defining layer 2, for example, formed as Common anode.
  • the base substrate 1 may be a glass substrate, a silicon wafer substrate, a quartz substrate, or the like.
  • a driving circuit layer (not shown) may be formed over the base substrate 1 for applying a driving voltage to the organic light emitting device to realize light emission of the organic light emitting device, and a pixel defining layer 2 is formed over the driving circuit layer.
  • a structure such as an organic light-emitting device can also be regarded as a part of the base substrate 1 at this time.
  • the driving circuit for each pixel region includes, for example, a gate line, a data line, a power supply line, a transistor, a storage capacitor, and the like.
  • the transistor is, for example, a thin film transistor, and can be used as a switching transistor, a driving transistor, or the like for driving a corresponding organic light emitting element.
  • a switching transistor for example, one of the source and drain of the driving transistor is electrically connected to the above anode.
  • the organic electroluminescent device substrate in the embodiments of the present disclosure can make a thin electrode (for example, a cathode) formed on a pixel defining layer have a better bonding effect, thereby improving light transmittance.
  • a thin electrode for example, a cathode
  • FIG. 3A is a schematic structural diagram of a pixel defining layer of the organic electroluminescent device substrate 200 according to at least one embodiment of the present disclosure
  • FIG. 3B is a different view of FIG. 3A.
  • a cross-sectional view of a portion, wherein the cross-sectional views shown by a-a', b-b', c-c', d-d', and e-e' in Fig. 3B are respectively along the cutting line a- of Fig. 3A.
  • the pixels at a', b-b', c-c'd-d', e-e' define a layer cross section.
  • the organic electroluminescent device substrate 200 includes a substrate substrate 1, a pixel defining layer 210 formed on the substrate substrate 1, and each pixel defined by the pixel defining layer 210.
  • the pixel defining layer 210 defines a plurality of pixel regions, which may be arranged in an array.
  • the plurality of pixel regions may be set to emit light of different colors, for example, the plurality of pixel regions may include a red (R) sub-pixel region, a green (G) sub-pixel region, and a blue (B) sub-pixel.
  • the regions correspondingly, have anodes 220, 230 and 240, respectively.
  • anodes 220, 230 and 240 respectively.
  • one red (R) sub-pixel, one green (G) sub-pixel, and one blue (B) sub-pixel adjacent to each other constitute one pixel, and they are arranged in a "good" word (or called a triangular arrangement).
  • the array substrate may further include a spacer 250 disposed on the pixel defining layer 210, the spacer 250 being disposed between adjacent pixel regions, for example, symmetrically disposed with respect to a boundary of a top opening of an adjacent pixel region .
  • the organic electroluminescent device can be a top emitting OLED device, such as a top-mounted OLED device.
  • 4 is a schematic structural view of a top-mounted OLED device according to at least one embodiment of the present disclosure.
  • the top-mounted OLED device includes a substrate substrate 41, an anode 42, a hole injection layer 43, a hole transport layer 44, an organic light-emitting layer 45, an electron transport layer 46, an electron injection layer 47, and a cathode 48.
  • the reflected light is emitted from the cathode side in a direction opposite to the base substrate 1.
  • pixel defining layer 210 is formed over anodes 220, 230, and 240 such that anodes 220, 230, and 240 are partially exposed from the bottom opening of the pixel region defined by corresponding pixel defining layer 210, such as a-a' in FIG. 3B. As shown by c-c', each anode is exposed from the bottom opening.
  • the top emission type OLED it can be formed by providing a transparent cathode layer and a reflective anode layer.
  • the organic electroluminescent device may also be a bottom emission type OLED.
  • a transparent anode layer and a reflective cathode layer may be provided, and the substrate substrate is also transparent at this time.
  • the anode material usually selects a transparent or translucent material having a high work function such as indium tin oxide (ITO), Ag, NiO, Al, ZnO, AZO (AlZnO), graphene, etc., which has good electrical conductivity and chemical stability, for example. Its thickness may be 1-2 micrometers ( ⁇ m).
  • the cathode material is usually selected from a metal or alloy material having a low work function; and in order to overcome the problem of high chemical activity of a low work function metal calcium, potassium, lithium, etc., the cathode material preferably uses a low work function metal and a corrosion resistant metal. Alloys such as MgAg (90 at% Mg, 3.7 eV), LiAl (0.6 at% Li, 3.2 eV), and the like.
  • the thickness of the pixel defining layer 210 is, for example, 1.5 to 3 ⁇ m, and the material used may be, for example, none.
  • Machine materials such as silicon nitride, silicon oxide, etc.
  • organic materials such as polyimide, polytetrafluoroethylene, etc.
  • photoresist such as polyvinyl alcohol laurate, KPR, KOR, etc.
  • the cathodes of the organic light emitting devices of adjacent pixel regions may be electrically connected to each other, for example, forming a common cathode layer of the entire array substrate or a portion of the array substrate portion.
  • the organic electroluminescent device substrate may include at least one of a red pixel, a green pixel, and a blue pixel.
  • the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B include a red sub-pixel anode 220, a green sub-pixel anode 230, and a blue sub-pixel anode 240, respectively.
  • the size, shape, and position of the red sub-pixel anode 220, the green sub-pixel anode 230, and the blue sub-pixel anode 240 may be set as needed, and are not limited herein.
  • the red sub-pixel R, the green sub-pixel G, and the blue sub-pixel B are respectively disposed in a rectangular shape having different sizes, and the three are uniformly disposed.
  • the sizes of the bottom opening and the top opening are also different.
  • the embodiment according to the present disclosure is not limited thereto, for example, an organic electroluminescent device structure in practical use. Any other suitable arrangement can be used for color display.
  • the organic electroluminescent device substrate further includes spacers and spacers 250 disposed on the pixel defining layer 210, the spacers 250 being supported on the organic electroluminescent device substrate, for example, in the formed display device Counter substrate.
  • the spacer 250 is symmetrically disposed, for example, at a boundary position of an adjacent top opening, and is disposed in the middle of two rows of pixel regions. As shown in FIG. 3A, the spacers 250 are uniformly and spaced apart at the boundary position of the pixel region where the adjacent red sub-pixel R, green sub-pixel G, and blue sub-pixel B are located; b-b' in FIG.
  • the figure is the boundary line of the adjacent top opening where the center line of the spacer 250 is located, so the upper surface of the pixel defining layer 210 in the figure is complete, indicating the spacer 250 shown by the two.
  • the position of the pixel defining layer 210 is incomplete in the illustration shown in the figure of e-e' where the spacer 250 is in the opening.
  • the slope angle of the opening area of the pixel defining layer of the embodiment of the present disclosure will be described below with reference to FIG.
  • the slope angle of the slope 21 between the top opening and the bottom opening of the pixel defining layer 2 in each pixel region is, for example, 5 to 25 degrees.
  • the slope angle of the slope 21 is 5 degrees, 10 degrees, 15 degrees, 20 degrees, and 25 degrees.
  • the slope 21 may be an inclined tapered surface or a curved surface that is recessed toward the inside, where the slope angle of the slope 21 refers to the surface or the cut surface and the horizontal plane (that is, the substrate) where the slope 21 is located. The angle between the upper surface of the substrate 1). It should be noted that if the slope 21 is formed to extend through a smooth curved surface, the slope angle is the angle between the tangent plane of the slope 21 and the upper surface of the base substrate 1.
  • the top opening of the pixel defining layer 110 shown in FIG. 1 is small, so the slope angle connecting the top opening and the bottom opening slope 21 (the curve on the inner side) is large, for example, the slope of the slope 21
  • the angle is indicated by ⁇ , for example, 37°; for the boundary of the top opening of the adjacent pixel region in the pixel defining layer 210 of the embodiment of the present disclosure shown in FIG. 3, the top opening is the largest, so the top opening and the bottom opening are connected.
  • the slope angle of the slope 21 (the curve on the outer side) is small, and the slope angle of the slope 21 is indicated by ⁇ , for example, 19°.
  • the top opening of the pixel defining layer forms a gentler slope with the bottom opening, and the vaporized surface (the surface of the slope) is simultaneously required to ensure evaporation of, for example, an organic light emitting layer (and, for example, a hole injecting layer, a hole transporting layer).
  • an organic light emitting layer and, for example, a hole injecting layer, a hole transporting layer.
  • the larger the value the better the adhesion of the thin cathode on the slope, and therefore, the film formation quality is further improved, and the performance of the organic light-emitting device can be further improved.
  • the organic electroluminescent device substrate of the embodiment of the present disclosure can also make a thin electrode (cathode) formed on the pixel defining layer also have a better bonding effect, thereby obtaining higher transmittance.
  • the organic electroluminescence display device includes any of the above-described organic electroluminescent device substrates 300.
  • the organic electroluminescent display device may include a counter substrate 400 disposed on the organic electroluminescent device substrate 300, such as by a sealant to the cartridge.
  • the opposite substrate 400 may include a glass substrate.
  • the organic electroluminescent display device can be implemented as a mobile phone, a television, a computer, a dashboard, and the like.
  • the organic electroluminescent display device has the same technical effects as any of the above-described organic electroluminescent device substrates, and will not be described herein.
  • At least one embodiment of the present disclosure further provides a method for fabricating an organic electroluminescent device substrate
  • FIG. 7 is a schematic flow chart of a method for fabricating an organic electroluminescent device substrate according to at least one embodiment of the present disclosure, as shown in FIG.
  • a method of manufacturing an organic electroluminescent device substrate includes the following steps:
  • Step 100 providing a substrate
  • Step 101 forming a pixel defining layer on the base substrate, wherein the pixel defining layer defines a plurality of pixel regions each having a top opening and a bottom opening in a thickness direction of the base substrate, the bottom opening being formed in the top opening such that each pixel region has a slope from the top opening to the bottom opening, and adjacent The boundaries of the top openings of the pixel regions intersect each other;
  • Step 102 forming an organic light emitting device in each of the pixel regions.
  • the organic light emitting device may include an anode formed in a bottom opening of the pixel region, an organic light emitting layer formed on the anode, and a cathode formed on the organic light emitting layer.
  • the obtained organic electroluminescent device substrate may be the organic electroluminescent device substrate of the embodiment shown in FIG. 2B, and specific structures thereof such as a substrate, an anode, an organic light-emitting layer, and a cathode are similar to the above-described corresponding features and realize the principle. The same, no longer repeat here.
  • the method of forming the pixel defining layer may be vapor deposition (CVD), spin coating or blade coating, etc., which is not limited by the embodiment of the present disclosure, and needs to be selected according to the material of the film layer to be formed.
  • CVD vapor deposition
  • it may be an inorganic material or an organic material, and when the pixel defining layer is an organic material, for example, a photoresist may be used.
  • the pixel defining layer may be formed on the insulating substrate by sequentially exposing a plurality of masks having different gray scales such that the pixel region has a slope from the top opening to the bottom opening.
  • the patterning process from the top opening to the bottom opening slope may include at least processes such as exposure, development, etching (wet etching or dry etching).
  • a plurality of masks having different gray scales may be employed for multiple exposure, such that in one pixel region, for a pixel defining layer from a position where a bottom opening is formed to formation
  • the degree of exposure of the position of the top opening gradually changes, and after developing the exposed photoresist, the pixel defining layer required by the embodiment of the present disclosure can be obtained.
  • forming the organic light emitting device may include sequentially forming an anode, an organic light emitting layer, and a cathode.
  • an anode may be first formed on a base substrate, and then a pixel defining layer is formed on the base substrate, and then an organic light emitting layer may be formed, for example, by inkjet printing.
  • an organic functional layer such as a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer may be formed by an inkjet printing method.
  • a cathode or the like is deposited on the organic light-emitting layer.
  • an organic light-emitting layer by vapor deposition using an evaporation mask, and the opening on the evaporation mask is the same or substantially the same as the top opening of the pixel region in the pixel defining layer.
  • an organic electroluminescent device substrate prepared in an embodiment of the present disclosure includes a red sub-image Prime, green subpixel or blue subpixel.
  • 8A-8C are schematic structural views of three vapor deposition masks respectively used to prepare the array substrate shown in FIGS. 3A and 3B according to at least one embodiment of the present disclosure, as shown in the figure, the masks of FIGS. 8A, 8B, and 8C are shown.
  • the opening positions of the film respectively correspond to the top openings of different pixel regions of the pixel defining layer, that is, the red sub-pixel mask R corresponds to the red sub-pixel, that is, the green sub-pixel mask G corresponds to the green sub-pixel, that is, the blue pixel mask
  • the diaphragm B corresponds to a blue sub-pixel.
  • the top openings corresponding to the respective different color pixels in the pixel defining layer are matched in size, shape, and the like with corresponding openings on the corresponding evaporation mask.
  • the design layout of the evaporation mask can utilize almost all of the light-emitting area space, that is, the surface area of the top opening of the pixel defining layer is maximized, and the slope angle is slowed down.
  • the evaporation mask can be reduced to cause clogging, and the number of times of cleaning the mask can be reduced.
  • a high-precision alignment system can be utilized to make the mask and The substrate substrate is aligned.
  • organic electro The method of manufacturing the light emitting device substrate may include the following steps
  • Step 200 providing a substrate.
  • Step 201 Form a pixel defining layer on the insulating substrate by using different gray scale exposure modes.
  • Step 202 forming a slope connecting the top opening to the bottom opening in a thickness direction of the base substrate of each pixel region by an exposure manner of different gray scales and intersecting the boundaries of the top openings of the adjacent pixel regions with each other.
  • Step 203 forming an anode in a bottom opening of each of the pixel regions.
  • Step 204 sequentially forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, and an electron injection layer on the anode.
  • Step 205 forming a cathode on the electron injection layer.
  • the organic electroluminescent device substrate according to the manufacturing method provided by the embodiment of the present disclosure may be the organic electroluminescent device substrate of the embodiment shown in FIGS. 3A and 3B, and the specific structures thereof such as a substrate, an anode, an organic light emitting layer, and a cathode are as described above.
  • the corresponding feature structures involved are similar and the implementation principles are the same, and are not described herein again.

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Abstract

一种有机电致发光器件基板及其制备方法、显示装置。该阵列基板包括衬底基板(1)、设置在衬底基板(1)上的像素界定层(2)以及设置在每个像素区域中的有机发光器件。像素界定层(2)界定了多个像素区域，所述像素区域在所述衬底基板(1)的厚度方向上具有顶部开口(8)和底部开口(7)，底部开口(7)形成在顶部开口(8)内从而每个像素区域具有从顶部开口(8)至底部开口(7)的斜坡(21)，并且相邻的像素区域的顶部开口(8)的边界彼此相交。在该阵列基板中，即便有机发光元件形成于像素界定层上的电极在较小厚度时也能具有较好的搭接，从而获得更高的透过率及显示效果。

Description

有机电致发光器件基板、显示装置及制造方法 技术领域
本公开的实施例涉及一种有机电致发光器件基板、显示装置及制造方法。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)具有自发光、快速响应、色彩丰富、宽视角和可制作在柔性衬底上等独特特点，以OLED为基础的显示器正成为显示领域的主流。
OLED显示背板包括阵列基板和有机发光器件，有机发光器件包括阳极、有机发光层和阴极等。阵列基板包括使用薄膜晶体管(TFT)形成的驱动电路。在阵列基板上制作像素界定层(Pixel Define Layer，PDL)以区隔各个像素区域，其每个像素区域例如为一个开口，每个开口中配置有一个有机发光器件。目前，显示领域对功耗，效率，视角色偏的要求越来越严格。有机发光器件的阴极如果做薄，则可以改善色偏，而且在阴极透过率提高的同时，有机发光器件的发光效率也会改善。
发明内容
本公开至少一实施例提供一种有机电致发光器件基板，包括：衬底基板；设置在衬底基板上的像素界定层，其中，像素界定层界定了多个像素区域，每个像素区域在所述衬底基板的厚度方向上具有顶部开口和底部开口，底部开口形成在顶部开口内，从而每个像素区域具有从顶部开口至底部开口的斜坡，并且相邻的像素区域的顶部开口的边界彼此相交；设置在每个像素区域中的有机发光器件。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，有机发光器件包括形成在像素区域的底部开口中的阳极、形成在阳极上的有机发光层以及形成在有机发光层上的阴极。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，像素 界定层形成在阳极之上，从而在每个所述像素区域中，阳极从底部开口中部分暴露。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，像素界定层在每个像素区域中的斜坡的坡度角为5～25度。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，相邻像素区域的有机发光器件的阴极彼此电连接。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，所述有机发光器件配置为发射红光、绿光或蓝光中的至少一种。
例如，本公开至少一实施例提供的有机电致发光器件基板还可以包括设置在像素界定层上的相互间隔且分散排布的隔垫物。
例如，在本公开至少一实施例提供的有机电致发光器件基板中，所述隔垫物相对于相邻的所述像素区域的顶部开口的边界位置对称地设置。
例如，在本公开至少一实施例提供的有机电致发光器件基板，还可以包括驱动电路层，其中，所述驱动电路层包括驱动晶体管，所述驱动晶体管与每个所述像素区域的有机发光器件的阳极电连接。
本公开至少一实施例还提供一种有机电致发光显示装置，包括上述任一有机电致发光器件基板。
例如，本公开至少一实施例提供的有机电致发光显示装置还可以包括对置基板，该对置基板设置在有机电致发光器件基板上。
本公开至少一实施例还提供一种有机电致发光器件基板的制造方法，包括：提供衬底基板；在衬底基板上形成像素界定层，其中，像素界定层界定了多个像素区域，每个像素区域在所述衬底基板的厚度方向上具有顶部开口和底部开口，底部开口形成在顶部开口内从而每个像素区域具有从顶部开口至底部开口的斜坡，并且相邻的像素区域的顶部开口的边界彼此相交；在每个像素区域中形成有机发光器件。
例如，在本公开至少一实施例提供的有机电致发光器件基板的制造方法中，有机发光器件包括形成在像素区域的底部开口中的阳极、形成在阳极上的有机发光层以及形成在有机发光层上的阴极。
例如，在本公开至少一实施例提供的有机电致发光器件基板的制造方法中，通过不同灰阶的曝光方式在衬底基板上形成像素界定层，以使得每 个像素区域具有从顶部开口至底部开口的斜坡。
例如，在本公开至少一实施例提供的有机电致发光器件基板的制造方法中，在每个所述像素区域中依次形成所述有机发光器件的阳极、有机发光层、阴极。
例如，在本公开至少一实施例提供的有机电致发光器件基板的制造方法中，使用蒸镀掩模版来蒸镀形成有机发光层，并且蒸镀掩模上的开口与像素区域的顶部开口相同或基本相同。
例如，在本公开至少一实施例提供的有机电致发光器件基板的制造方法中，所述有机发光层为发射红光、绿光或蓝光的有机发光层。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为一种有机电致发光器件基板的像素界定层的结构示意图；
图1B为图1A所示的有机电致发光器件基板的不同部位的截面示意图；
图2A为本公开至少一实施例提供的一种有机电致发光器件基板的部分截面结构示意图；
图2B为本公开至少一实施例提供的一种有机电致发光器件的截面结构示意图；
图3A为本公开至少一实施例提供的一种有机电致发光器件的像素界定层的结构示意图；
图3B为图3A所示的有机电致发光器件基板的不同部位的截面结构示意图；
图4为本公开至少一实施例提供的正置顶发射OLED器件的结构示意图；
图5为本公开至少一实施例提供的像素界定层的开口区域的坡度角示意图；
图6为本公开至少一实施例提供的有机电致发光显示装置的示意图；
图7为本公开至少一实施例提供的有机电致发光器件基板的制造方法 的流程示意图；
图8A-8C为本公开至少一实施例提供的像素掩膜版的结构示意图；以及
图9为本公开至少一实施例提供的有机电致发光器件基板的制造方法的流程示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
像素界定层(Pixel Define Layer，PDL)界定像素区域的开口区域的制作方法包括根据像素区域的形状，在PDL层中对应像素区域的位置开设相对较方正的孔。随着显示行业对视角、色偏等的要求越来越高，同时也为了获得更高的发光效率，阴极的厚度需要制作的更薄，这样对PDL的开口区域的形状提出了新的要求。
图1A为一种有机电致发光器件基板的像素界定层的结构示意图，图1B为图1A的不同部位的截面示意图，其中，图1B中的a-a’、b-b’、c-c’、d-d’、e-e’所示的剖面图分别为沿图1A的剖切线a-a’、b-b’、c-c’、d-d’、e-e’处的像素界定层的横截面。
如图1A所示，有机电致发光器件基板100包括多个按阵列排布的像素区域，包括形成红色子像素(R)、绿色子像素(G)和蓝色子像素(B)的像素区域。如图1B所示，像素界定层110具有对应于每个像素区域的开口区域，图1B中开口区域中分别形成有例如对应于红色子像素(R)、绿色子像素(G)和蓝色子像素(B)的有机发光器件的阳极120、130和140。
像素界定层110对应于每个像素区域的开口区域包括在衬底基板的厚度方向上的顶部开口和底部开口；相邻像素区域的顶部开口的边界彼此之间有一定距离，故顶部开口占据阵列基板的面积较小，造成像素界定层110所界定的像素区域内顶部开口到底部开口的斜坡坡度较陡。相邻像素区域的顶部开口的中间形成有平台部分，并且隔垫物150可以设置在相邻像素区域的顶部开口的中间平台部分上。
在形成有像素界定层的阵列基板上还需要进一步地形成有机发光层和阴极。例如，采用蒸镀的方法形成用于发射不同颜色的光的有机发光层。例如，公共阴极可以在整个阵列基板上延伸。如果阴极较薄，则可能出现阴极膜层断裂、不连续的问题，从而造成阴极搭接不良和阴极的电阻增大，使得所得到的有机发光器件的效率降低以及功耗增加，甚至会直接造成断路，导致显示装置不能被点亮，从而不能正常的实现其显示功能。
本公开至少一实施例提供一种有机电致发光器件基板，图2A为本公开至少一实施例提供的有机电致发光器件基板的结构示意图，如图2A所示，该有机电致发光器件基板包括衬底基板1、设置在衬底基板1上的像素界定层2、以及设置在像素界定层2界定的每个像素区域中的有机发光器件(图中未示出)。
例如，如图2A所示，像素界定层2界定了多个像素区域，该多个像素区域可以呈矩阵分布，该多个像素区域可以被限定为用于发射相同或不同颜色的光。像素界定层2对应于每个像素区域的开口区域在衬底基板1的厚度方向上具有顶部开口8和底部开口7，底部开口7形成在顶部开口8内从而每个像素区域具有从顶部开口8至底部开口7的斜坡21，并且相邻的像素区域的顶部开口8的边界彼此相交，也即相邻的顶部开口边界彼此重合，在二者之间不存在或基本不存在平坦区域。底部开口7和顶部开口8在衬底基板1所在的平面上的投影至少部分不重叠，以使得底部开口7形成在顶部开口8 内。
需要说明的是，像素界定层的斜坡21的顶部开口8是指像素界定层2远离衬底基板1的部分的开口，底部开口7是指像素界定层2靠近衬底基板1的部分的开口，像素界定层的顶部开口和底部开口经由斜坡21连接。例如，图2B为本公开至少一实施例提供的一种有机电致发光器件的截面结构示意图。如图2B所示，在每个像素区域之中，有机发光器件可以包括形成在该像素区域的底部开口7中的阳极4、形成在阳极4上的有机发光层5以及形成在有机发光层5上的阴极6。例如，该有机发光层5形成在像素界定层2限定的像素区域之中，而阴极6，例如为公共阴极，为多个彼此相邻的像素区域所共享，由此跨越了相邻的像素区域之间的边界，覆盖在像素区域内的像素界定层2的斜坡21上。另外，在其他示例中，有机发光器件可以包括依次形成在衬底基板1上的阴极、有机发光层5和阳极4，则在该示例中阳极4可以形成在像素界定层2上，例如形成为公共阳极。
示例性地，衬底基板1可以为玻璃基板、硅片基板、石英基板等。并且，例如在衬底基板1之上还可以形成有驱动电路层(未示出)用于为上述有机发光器件施加驱动电压以实现有机发光器件发光，在驱动电路层之上形成像素界定层2、有机发光器件等结构，此时也可以将驱动电路层视为衬底基板1的一部分。用于每个像素区域的驱动电路例如包括栅线、数据线、电源线、晶体管、存储电容等。该晶体管例如为薄膜晶体管，可以用作开关晶体管、驱动晶体管等，用于驱动相应的有机发光元件。例如，驱动晶体管的源漏极之一与上述阳极电连接。
本公开的实施例中的有机电致发光器件基板可使得形成在像素界定层上较薄的电极(例如阴极)具有较好的搭接效果，从而提高光的透过率。
本公开至少一实施例还提供一种有机电致发光器件基板200，图3A为本公开至少一实施例的有机电致发光器件基板200的像素界定层的结构示意图，图3B为图3A的不同部位的截面示意图，其中，图3B中的a-a’、b-b’、c-c’、d-d’、e-e’所示的剖面图分别为沿图3A的剖切线a-a’、b-b’、c-c’d-d’、e-e’处的像素界定层横截面。
如图3A和3B所示，有机电致发光器件基板200包括衬底基板1、形成在衬底基板1上的像素界定层210、以及形成在像素界定层210界定的每个像素 区域中的有机发光器件，图3A和3B中仅示出了有机发光器件的阳极。像素界定层210界定了多个像素区域，该多个像素区域可以呈阵列排布。该多个像素区域可以被设定为用于发射不同颜色的光，例如，该多个像素区域可以包括红色(R)子像素区域、绿色(G)子像素区域和蓝色(B)子像素区域，对应地，分别具有阳极220、230和240。例如，彼此相邻的一个红色(R)子像素、一个绿色(G)子像素和一个蓝色(B)子像素构成一个像素，且它们呈“品”字排列(或称为三角排列)。
该阵列基板还可以包括设置在像素界定层210上的隔垫物250，该隔垫物250设置在相邻的像素区域之间，例如可以相对于相邻的像素区域的顶部开口的边界对称设置。
例如，有机电致发光器件可以为顶发射OLED器件，例如正置顶发射OLED器件。图4为本公开至少一实施例的正置顶发射OLED器件的结构示意图。如图4所示，该正置顶发射OLED器件包括衬底基板41、阳极42、空穴注入层43、空穴传输层44、有机发光层45、电子传输层46、电子注入层47和阴极48。例如，反射光以相反于衬底基板1的方向由阴极一侧射出。
例如，像素界定层210形成在阳极220、230和240之上，从而阳极220、230和240从对应的像素界定层210界定的像素区域的底部开口中部分暴露，如图3B中a-a’、c-c’所示，各阳极从底部开口中露出。对于顶发光型OLED，在可以通过设置透明的阴极层和反射型的阳极层来形成。在本公开的其他实施例中，有机电致发光器件还可以是底发光型OLED。对于底发光型OLED，可以设置透明性的阳极层和反射型的阴极层来形成，此时衬底基板也是透明的。
根据OLED器件结构的不同，选择不同的阳极材料和阴极材料。例如，阳极材料通常选择具有良好的导电性、化学稳定性的氧化铟锡(ITO)、Ag、NiO、Al、ZnO、AZO(AlZnO)、石墨烯等高功函数的透明或半透明材料，例如其厚度可以为1-2微米(μm)。例如，阴极材料通常选择具有低功函数的金属或合金材料；而且为了克服低功函数的金属钙、钾、锂等具有高化学活性的问题，阴极材料优选采用低功函数的金属与抗腐蚀金属的合金，诸如MgAg(90at％Mg，3.7eV)、LiAl(0.6at％Li，3.2eV)等。
像素界定层210的厚度例如为1.5-3微米，所使用的材料例如可以为无 机材料(例如氮化硅、氧化硅等)或有机材料(例如聚酰亚胺、聚四氟乙烯等)，还可以为光刻胶(如聚乙烯醇月桂酸酯、KPR、KOR等)，本公开的实施例对此不做限定。
例如，相邻像素区域的有机发光器件的阴极可以彼此电连接，例如形成整个阵列基板或阵列基板部分区域的公共阴极层。
例如，有机电致发光器件基板可以包括红色像素、绿色像素和蓝色像素中的至少一种。例如，红色子像素R、绿色子像素G和蓝色子像素B分别包括红色子像素阳极220、绿色子像素阳极230和蓝色子像素阳极240。例如，红色子像素阳极220、绿色子像素阳极230和蓝色子像素阳极240的大小、形状和位置可以根据需要设置，在此不做限制。
如图3A所示，红色子像素R、绿色子像素G和蓝色子像素B分别设置成大小不同的长方形状，并且三者均匀设置。如图3B中a-a’、c-c’图所示，依像素阳极4的大小形状不同，其底部开口和顶部开口的大小也相应不同。
虽然在图3A中以包括不同颜色的均匀排列的形式的有机电致发光器结构为例进行了描述，但根据本公开的实施例不限于此，例如，实际应用中的有机电致发光器件结构可以采取任意其他合适的排布方式用于彩色显示。
例如，有机电致发光器件基板还包括设置在像素界定层210上的间隔且分散排布的隔垫物250，该隔垫物250例如在形成的显示装置中在有机电致发光器件基板上支撑对置基板。该隔垫物250例如对称地设置在相邻顶部开口的边界位置，并且设置在两行像素区域的中间。如图3A所示，隔垫物250均匀且间隔设置在相邻的红色子像素R、绿色子像素G和蓝色子像素B所在像素区域的交界位置；如图3B中的b-b’、d-d’所示，图中为隔垫物250的中心线所在的相邻顶部开口的交界线，故图示中的像素界定层210上表面完整，指示二者所示的隔垫物250的位置不同；而e-e’所示图中为隔垫物250处于开口中的部分，故图示中像素界定层210的上表面不完整。
下面结合图6来说明本公开的实施例的像素界定层的开口区域的坡度角。像素界定层2在每个像素区域中的顶部开口和底部开口之间的斜坡21的坡度角例如为5～25度。
例如，斜坡21的坡度角为5度，10度，15度，20度以及25度。
例如，在本公开的实施例中，斜坡21可以为倾斜的锥面或向内部凹陷的曲面，此处的斜坡21的坡度角是指斜坡21所在的面或切面与水平面(也也即衬底基板1的上表面)之间的夹角。应该注意的是，如果斜坡21是经由光滑的曲面延伸形成，则坡度角就是斜坡21的切面与衬底基板1的上表面之间的夹角。
如图5所示，对于图1所示的像素界定层110的顶部开口较小，故连接顶部开口与底部开口的斜坡21(靠内侧的曲线)的坡度角较大，例如该斜坡21的坡度角以α所示，例如为37°；对于图3所示的本公开实施例的像素界定层210中相邻像素区域的顶部开口的边界重叠，使得顶部开口最大，故连接顶部开口与底部开口的斜坡21(靠外侧的曲线)的坡度角较小，斜坡21的坡度角以β所示，例如为19°。例如，像素界定层的顶部开口与底部开口形成更为平缓的斜坡，在保证例如有机发光层(以及例如空穴注入层、空穴传输层)蒸镀需要的同时，蒸镀面(斜坡的表面)越大越利于薄的阴极在斜坡上的附着，因此，成膜质量进一步提高，可以进一步提高有机发光器件的性能。
本公开实施例的有机电致发光器件基板可使得形成在像素界定层上较薄的电极(阴极)也能具有较好的搭接效果，从而获得更高的透过率。
本公开至少一实施例还提供一种有机电致发光显示装置，如图6所示，该有机电致发光显示装置包括上述任一有机电致发光器件基板300。该有机电致发光显示装置可以包括对置基板400，该对置基板400设置在有机电致发光器件基板300上，二者例如通过密封胶对盒。该对置基板400可以包括玻璃衬底。在实际应用中，该有机电致发光显示装置可以实现为手机、电视、电脑、仪表板等。
有机电致发光显示装置由于具有上述任一有机电致发光器件基板，其技术效果相同，在此不再赘述。
本公开至少一实施例还提供一种有机电致发光器件基板的制造方法，图7为本公开至少一实施例的有机电致发光器件基板的制造方法的流程示意图，如图7所示，该有机电致发光器件基板的制造方法包括以下步骤:
步骤100、提供衬底基板；
步骤101、在衬底基板上形成像素界定层，其中，像素界定层界定了 多个像素区域，每个像素区域在衬底基板的厚度方向上具有顶部开口和底部开口，底部开口形成在顶部开口内从而每个像素区域具有从顶部开口至底部开口的斜坡，并且相邻的像素区域的顶部开口的边界彼此相交；
步骤102、在每个像素区域中形成有机发光器件。
例如，有机发光器件可以包括形成在像素区域的底部开口中的阳极、形成在阳极上的有机发光层以及形成在有机发光层上的阴极。
例如，所得到的有机电致发光器件基板可以为图2B所示实施例的有机电致发光器件基板，其具体结构诸如基板、阳极、有机发光层和阴极与上述相应的特征结构类似且实现原理相同，在此不再赘述。
例如，形成像素界定层的方法可以是气相沉积(CVD)、旋涂(spin coating)或刮涂等，本公开的实施例对此不做限制，需要根据待形成的膜层的材料进行选择，例如可以为无机材料或有机材料，当像素界定层为有机材料，例如可以采用光刻胶。
例如，可以通过采用多个具有不同灰阶的掩模板依次曝光方式在绝缘衬底上形成像素界定层，以使得像素区域具有从顶部开口至底部开口的斜坡。例如，从顶部开口至底部开口的斜坡的构图工艺可以至少包括曝光、显影、刻蚀(湿法刻蚀或干法刻蚀)等过程。
例如，在使用光刻胶材料制备像素界定层的情况，可以采用多个具有不同灰阶的掩模板多次曝光方式，使得在一个像素区域中，对于像素界定层从形成底部开口的位置到形成顶部开口的位置的曝光程度逐渐变化，在将被曝光的光刻胶显影之后，可以得到本公开实施例所需要的像素界定层。
例如，形成有机发光器件可以包括依次形成阳极、有机发光层、阴极。例如，可以首先在衬底基板上形成阳极，然后衬底基板上形成像素界定层，之后例如可以采用喷墨打印形成有机发光层。如果还需要形成有机功能层，则也可以采用喷墨打印方式形成空穴注入层、空穴传输层、电子传输层、电子注入层等有机功能层。最后，在有机发光层上沉积阴极等。当然，也可以在形成了像素界定层之后，再形成有机发光器件的阳极等构造。
又例如，还可以使用蒸镀掩模版来蒸镀形成有机发光层，并且蒸镀掩模上的开口与像素界定层中的像素区域的顶部开口相同或基本相同。
例如，在本公开实施例制备的有机电致发光器件基板，包括红色子像 素、绿色子像素或蓝色子像素。图8A-8C为本公开至少一实施例的分别用于制备图3A、3B所示的阵列基板的三个蒸镀掩膜版的结构示意图，如图所示，图8A、8B、8C的掩膜板开口位置分别对应于像素界定层不同像素区域的顶部开口，即红色子像素掩膜板R对应于红色子像素，即绿色子像素掩膜板G对应于绿色子像素，即蓝色像素掩膜板B对应于蓝色子像素。
另外，像素界定层中的各个不同颜色像素对应的顶部开口与相应蒸镀掩膜板上的相应的开口在大小、形状等均相匹配。由此，蒸镀掩膜板的设计排版几乎可以利用所有的发光区空间，也就是说，像素界定层顶部开口的表面积实现最大化，坡度角变缓。并且，因为像素界定层顶部开口与蒸镀掩膜板的开口相对应，可以使得蒸镀掩膜板减少发生堵塞，减少蒸镀掩膜板的清洗次数。
在实际应用中，在蒸镀红色子像素、绿色子像素、蓝色子像素中的有机材料层(有机发光层或有机功能层)时，可利用高精度的对位系统来使得掩膜板和衬底基板对准。
图9为本公开至少一实施例的有机电致发光器件基板的制造方法的流程示意图，如图9所示，在图7所示的有机电致发光器件基板的制造方法基础上，有机电致发光器件基板的制造方法可以包括以下步骤
步骤200、提供衬底基板。
步骤201、通过不同灰阶的曝光方式在绝缘衬底上形成像素界定层。
步骤202、通过不同灰阶的曝光方式在每个像素区域的衬底基板的厚度方向上形成连接顶部开口至底部开口的斜坡并使得相邻的像素区域的顶部开口的边界彼此相交。
步骤203、在每个像素区域的底部开口中形成阳极。
步骤204、在阳极上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层。
步骤205、在电子注入层上形成阴极。
本公开的实施例提供的制造方法涉及的有机电致发光器件基板可以为图3A和3B所示实施例的有机电致发光器件基板，其具体结构诸如基板、阳极、有机发光层和阴极与上述所涉及的相应特征结构类似且实现原理相同，在此不再赘述。
有以下几点需要说明：
(1)本公开实施例附图只涉及与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(3)在不冲突的情况下，本公开的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，本公开的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年11月14日递交的中国专利申请第201610999302.3号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种有机电致发光器件基板，包括：
    衬底基板；
    设置在所述衬底基板上的像素界定层，其中，所述像素界定层界定了多个像素区域，所述像素区域在所述衬底基板的厚度方向上具有顶部开口和底部开口，所述底部开口形成在所述顶部开口内，从而每个所述像素区域具有从所述顶部开口至所述底部开口的斜坡，并且相邻的所述顶部开口的边界彼此相交；
    设置在每个所述像素区域中的有机发光器件。
  2. 根据权利要求1所述的有机电致发光器件基板，其中，所述有机发光器件包括形成在所述像素区域的所述底部开口中的阳极、形成在所述阳极上的有机发光层以及形成在所述有机发光层上的阴极。
  3. 根据权利要求2所述的有机电致发光器件基板，其中，所述像素界定层形成在所述阳极之上，从而在每个所述像素区域中，所述阳极从所述底部开口中部分暴露。
  4. 根据权利要求1-3中任一项所述的有机电致发光器件基板，其中，所述像素界定层在每个所述像素区域中的所述斜坡的坡度角为5～25度。
  5. 根据权利要求2所述的有机电致发光器件基板，其中，相邻的所述像素区域的所述有机发光器件的所述阴极彼此电连接。
  6. 根据权利要求1-5中任一项所述的有机电致发光器件基板，其中，所述有机发光器件配置为发射红光、绿光或蓝光中的至少一种。
  7. 根据权利要求1-6中任一项所述的有机电致发光器件基板，还包括设置在所述像素界定层上的相互间隔且分散排布的隔垫物。
  8. 根据权利要求7所述的有机电致发光器件基板，其中，所述隔垫物相对于相邻的所述顶部开口的边界位置对称地设置。
  9. 根据权利要求1-8中任一项所述的有机电致发光器件基板，还包括驱动电路层，其中，所述驱动电路层包括驱动晶体管，所述驱动晶体管与每个所述像素区域的有机发光器件电连接以驱动所述有机发光器件。
  10. 一种有机电致发光显示装置，包括权利要求1-9中任一项所述的有机电致发光器件基板。
  11. 一种有机电致发光器件基板的制造方法，包括：
    提供衬底基板；
    在所述衬底基板上形成像素界定层，其中，所述像素界定层界定了多个像素区域，每个所述像素区域在所述衬底基板的厚度方向上具有顶部开口和底部开口，所述底部开口形成在所述顶部开口内从而每个所述像素区域具有从所述顶部开口至所述底部开口的斜坡，并且相邻的所述顶部开口的边界彼此相交；
    在每个所述像素区域中形成有机发光器件。
  12. 根据权利要求11所述的制造方法，其中，所述有机发光器件包括形成在所述像素区域的所述底部开口中的阳极、形成在所述阳极上的有机发光层以及形成在所述有机发光层上的阴极。
  13. 根据权利要求11所述的制造方法，其中，通过不同灰阶的曝光方式在所述衬底基板上形成所述像素界定层，以使得每个所述像素区域具有从所述顶部开口至所述底部开口的斜坡。
  14. 根据权利要求11-13中任一项所述的制造方法，其中，在每个所述像素区域中依次形成所述有机发光器件的阳极、有机发光层、阴极。
  15. 根据权利要求14所述的制造方法，其中，使用蒸镀掩模版来蒸镀形成所述有机发光层，并且所述蒸镀掩模上的开口与所述像素区域的所述顶部开口相同或基本相同。
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