WO2018113019A1 - Oled显示面板及其制作方法 - Google Patents

Oled显示面板及其制作方法 Download PDF

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Publication number
WO2018113019A1
WO2018113019A1 PCT/CN2016/113052 CN2016113052W WO2018113019A1 WO 2018113019 A1 WO2018113019 A1 WO 2018113019A1 CN 2016113052 W CN2016113052 W CN 2016113052W WO 2018113019 A1 WO2018113019 A1 WO 2018113019A1
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layer
thin film
pixel defining
display panel
oled display
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PCT/CN2016/113052
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English (en)
French (fr)
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余威
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武汉华星光电技术有限公司
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Priority to US15/505,102 priority Critical patent/US20180198093A1/en
Publication of WO2018113019A1 publication Critical patent/WO2018113019A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display panel and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT). ) Matrix addressing two categories.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • TFT thin film transistor
  • Matrix addressing two categories the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the mainstream flexible OLED display panel is manufactured by coating a glass substrate as a carrier, coating a polyimide (PI) film on the entire surface of the glass substrate, curing the PI film, and the PI film acts as a flexible substrate, and then A water-oxygen barrier layer is formed on the cured PI film, and then a thin film transistor layer, an OLED device layer, and a thin film package are sequentially formed from the water-oxygen barrier layer (TFE, Thin Film)
  • TFE Water-oxygen barrier layer
  • the flexible OLED display panel is frequently in a bent state, the light emitted from the OLED light emitting layer 100 of one sub-pixel is often reflected and/or refracted in the encapsulation layer 200, and finally a part of the light is generated.
  • An object of the present invention is to provide a method for fabricating an OLED display panel, which can prevent light emitted from each sub-pixel from interfering with adjacent sub-pixels, improve color purity of a single sub-pixel, and improve color shift of the OLED display panel.
  • the present invention provides a method for fabricating an OLED display panel, comprising the following steps:
  • Step 1 providing a thin film transistor array substrate, forming a plurality of anodes disposed at intervals on the thin film transistor array substrate;
  • Step 2 forming a pixel defining layer on the plurality of anodes and the thin film transistor array substrate, wherein the pixel defining layer includes a plurality of open regions respectively corresponding to the plurality of anodes and between the plurality of open regions Non-opening area;
  • Step 3 forming a plurality of OLED light-emitting layers disposed on the plurality of anodes in the plurality of open regions of the pixel defining layer;
  • Step 4 forming a cathode covering the plurality of OLED light emitting layers and the pixel defining layer on the plurality of OLED light emitting layers and the pixel defining layer;
  • Step 5 forming a thin film encapsulation layer on the cathode, the thin film encapsulation layer comprising a plurality of inorganic and organic layers laminated and alternately disposed, wherein each inorganic layer is away from a side of the OLED light emitting layer A region on the surface corresponding to the non-opening region of the pixel defining layer has diffuse reflection roughness.
  • each inorganic layer is subjected to plasma bombardment treatment using a mask plate, and the mask plate is provided with a non-opening region corresponding to the pixel defining layer.
  • the opening, the surface of each inorganic layer away from the opening of the OLED light-emitting layer corresponding to the opening of the mask is subjected to plasma bombardment treatment to form a diffuse reflection roughness.
  • the plasma is nitrogen trifluoride.
  • the structural layer in contact with the cathode and the outermost structural layer are inorganic layers.
  • the anode is a reflective electrode and the cathode is a translucent electrode.
  • the invention also provides an OLED display panel comprising:
  • a pixel defining layer disposed on the plurality of anode and thin film transistor array substrates, the pixel defining layer including a plurality of open regions respectively corresponding to the plurality of anodes and a non-opening between the plurality of open regions Area;
  • a cathode disposed on the plurality of OLED light emitting layers and the pixel defining layer and covering the plurality of OLED light emitting layers and the pixel defining layer;
  • the thin film encapsulation layer disposed on the cathode, the thin film encapsulation layer comprising a plurality of inorganic and organic layers laminated and alternately disposed, wherein each inorganic layer is on a surface away from a side of the OLED light emitting layer A region corresponding to the non-opening region of the pixel defining layer has a diffuse reflection roughness.
  • a diffuse reflection roughness of a region of each inorganic layer away from a side of the OLED light-emitting layer that corresponds to a non-opening region of the pixel defining layer is obtained by a plasma bombardment process.
  • the plasma is nitrogen trifluoride.
  • the structural layer in contact with the cathode and the outermost structural layer are inorganic layers.
  • the anode is a reflective electrode and the cathode is a translucent electrode.
  • the invention also provides an OLED display panel comprising:
  • a pixel defining layer disposed on the plurality of anode and thin film transistor array substrates, the pixel defining layer including a plurality of open regions respectively corresponding to the plurality of anodes and a non-opening between the plurality of open regions Area;
  • the thin film encapsulation layer comprising a plurality of inorganic and organic layers laminated and alternately disposed, wherein each inorganic layer is on a surface away from a side of the OLED light emitting layer a region corresponding to the non-opening region of the pixel defining layer has a diffuse reflection roughness;
  • the structural layer in contact with the cathode and the outermost structural layer are inorganic layers;
  • the anode is a reflective electrode and the cathode is a translucent electrode.
  • the present invention provides a method for fabricating an OLED display panel, which has a diffuse reflection roughness corresponding to a non-pixel region of a surface of an inorganic layer in a thin film encapsulation layer by a plasma bombardment treatment method.
  • the light emitted from the OLED light-emitting layer of each sub-pixel is diffusely reflected when incident on the region, and the light is diverged and atomized everywhere, and cannot be concentratedly reflected and/or refracted, so that it cannot be emitted from adjacent sub-pixels. Therefore, light emitted from each sub-pixel can be prevented from interfering with adjacent sub-pixels, color purity of a single sub-pixel is improved, and color shift phenomenon of the OLED display panel is improved.
  • the invention provides an OLED display panel.
  • the surface of the inorganic layer in the thin film encapsulation layer has a diffuse reflection roughness corresponding to the non-pixel area, which can avoid the light emitted from each sub-pixel from interfering with adjacent sub-pixels and improve the single sub-pixel.
  • the color purity of the pixel and the color shift of the OLED display panel is not limited.
  • FIG. 1 is a schematic diagram of a part of light emitted from an adjacent sub-pixel after light emitted from an OLED light-emitting layer of one sub-pixel is reflected and/or refracted in an encapsulation layer in a conventional flexible OLED display panel;
  • FIG. 2 is a flow chart of a method of fabricating an OLED display panel of the present invention
  • step 2 is a schematic diagram of step 2 of a method for fabricating an OLED display panel of the present invention
  • step 3 is a schematic diagram of step 3 of a method for fabricating an OLED display panel of the present invention.
  • step 4 is a schematic diagram of step 4 of a method for fabricating an OLED display panel of the present invention.
  • step 7 is a schematic diagram of step 5 of a method for fabricating an OLED display panel of the present invention and a schematic structural view of an OLED display panel of the present invention
  • FIG. 8 is a schematic diagram showing a plasma bombardment treatment of an inorganic layer by using a mask in step 5 of the method for fabricating an OLED display panel of the present invention.
  • the present invention provides a method for fabricating an OLED display panel, including the following steps:
  • Step 1 as shown in FIG. 3, a thin film transistor array substrate 10 is provided, and a plurality of anodes 20 are formed on the thin film transistor array substrate 10.
  • the thin film transistor array substrate 10 includes a base substrate 11 and a thin film transistor array layer 12 disposed on the base substrate 11.
  • the base substrate 11 may be a rigid substrate or a flexible substrate, and the rigid substrate is preferably a glass substrate, and the flexible substrate is preferably a polyimide film.
  • the OLED display panel produced by the present invention is a rigid OLED display panel
  • the base substrate 11 is a flexible substrate
  • the OLED display panel subsequently produced by the present invention is a flexible OLED display. panel.
  • Step 2 As shown in FIG. 4, a pixel defining layer 30 is formed on the plurality of anodes 20 and the thin film transistor array substrate 10, and the pixel defining layer 30 includes a plurality of open regions respectively corresponding to the plurality of anodes 20 31 and a non-opening region 32 between the plurality of open areas 31.
  • the plurality of open areas 31 of the pixel defining layer 30 respectively correspond to a plurality of sub-pixel areas of the OLED display panel
  • the non-opening area 32 of the pixel defining layer 30 corresponds to a non-pixel area of the OLED display panel.
  • the material of the pixel defining layer 30 is a transparent organic material.
  • Step 3 As shown in FIG. 5, a plurality of OLED light-emitting layers 40 disposed on the plurality of anodes 20 are respectively formed in the plurality of open regions 31 of the pixel defining layer 30.
  • the plurality of OLED light emitting layers 40 are formed by evaporation.
  • the OLED light-emitting layer 40 includes a hole injection layer (not shown), a hole transport layer (not shown), and a light-emitting layer (not shown) which are stacked in this order from the bottom to the top of the anode 20 (not shown). ), an electron transport layer (not shown), and an electron injection layer (not shown).
  • Step 4 as shown in FIG. 6, the plurality of OLED light emitting layers 40 and the pixel defining layer 30
  • a cathode 50 covering the plurality of OLED light emitting layers 40 and the pixel defining layer 30 is formed over the entire surface.
  • the anode 20 is a reflective electrode
  • the cathode 50 is a translucent electrode, so that the OLED display panel produced by the present invention constitutes a top-emitting OLED display panel.
  • the anode 20 includes a layer of two indium tin oxide (ITO) and a layer of silver (Ag) interposed between the layers of indium tin oxide.
  • ITO indium tin oxide
  • Ag silver
  • the material of the cathode 50 is a metal, preferably a magnesium-silver alloy.
  • a thin film encapsulation layer 60 is formed on the cathode 50, and the thin film encapsulation layer 60 includes a plurality of inorganic layer 61 and an organic material layer 62 which are stacked and alternately disposed, wherein each inorganic substance
  • the area of the layer 61 on the side remote from the side of the OLED light emitting layer 40 corresponding to the non-opening region 32 of the pixel defining layer 30 has diffuse reflection roughness.
  • each inorganic layer 61 is subjected to plasma bombardment treatment using a mask 70, on the mask 70.
  • An opening 71 corresponding to the non-opening region 32 of the pixel defining layer 30 is provided, and an opening 71 corresponding to the mask 70 on a surface of each inorganic layer 61 away from the side of the OLED emitting layer 40 The area is subjected to plasma bombardment to form a diffuse reflection roughness.
  • the plasma is nitrogen trifluoride (NF 3 ).
  • the structural layer in contact with the cathode 50 and the outermost structural layer are inorganic layers 61.
  • the thin film encapsulation layer 60 includes two inorganic material layers 61 and an organic material layer 62 interposed between the two inorganic material layers 61.
  • the material of the inorganic layer 61 includes at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ); the material of the organic layer 62 One or more of Acrylic, hexamethyldisiloxane (HMDSO), polyacrylate, polycarbonate, and polystyrene are included.
  • SiO x silicon oxide
  • SiN x silicon nitride
  • SiO x N y silicon oxynitride
  • HMDSO hexamethyldisiloxane
  • polyacrylate polycarbonate
  • polystyrene are included.
  • the thin film encapsulation layer 60 is used to block the erosion of the OLED device by the external water and oxygen, and improve the service life of the OLED device.
  • the surface of the inorganic material layer 61 in the thin film encapsulation layer 60 has a diffuse reflection roughness corresponding to a region of the non-pixel region by using a plasma bombardment treatment, so that the OLED light-emitting layer from each sub-pixel is obtained.
  • the light emitted by 40 is incident on the area Diffuse reflection occurs, the light is diverged and atomized everywhere, and cannot be concentratedly reflected and/or refracted, so that it cannot be emitted from adjacent sub-pixels, thereby avoiding light emitted from each sub-pixel from interfering with adjacent sub-pixels, thereby improving The color purity of a single sub-pixel and the color shift of the OLED display panel.
  • the present invention further provides an OLED display panel, including:
  • a pixel defining layer 30 disposed on the plurality of anodes 20 and the thin film transistor array substrate 10, wherein the pixel defining layer 30 includes a plurality of open regions 31 respectively corresponding to the plurality of anodes 20 and located at the plurality of openings a non-opening area 32 between the areas 31;
  • the cathodes 50 are disposed on the plurality of OLED light emitting layers 40 and the pixel defining layer 30 and covering the plurality of OLED light emitting layers 40 and the pixel defining layer 30;
  • the thin film encapsulation layer 60 includes a plurality of inorganic material layers 61 and an organic material layer 62 which are stacked and alternately disposed, wherein each of the inorganic material layers 61 emits light away from the OLED A region on the surface of one side of the layer 40 corresponding to the non-opening region 32 of the pixel defining layer 30 has a diffuse reflection roughness.
  • a diffuse reflection roughness of a region of each inorganic material layer 61 on a surface away from the OLED light emitting layer 40 side corresponding to the non-opening region 32 of the pixel defining layer 30 Obtained by plasma bombardment treatment.
  • the plasma is nitrogen trifluoride (NF 3 ).
  • the structural layer in contact with the cathode 50 and the outermost structural layer are inorganic layers 61.
  • the thin film encapsulation layer 60 includes two inorganic material layers 61 and an organic material layer 62 interposed between the two inorganic material layers 61.
  • the material of the inorganic layer 61 includes at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), and silicon oxynitride (SiO x N y ); the material of the organic layer 62 One or more of Acrylic, hexamethyldisiloxane (HMDSO), polyacrylate, polycarbonate, and polystyrene are included.
  • SiO x silicon oxide
  • SiN x silicon nitride
  • SiO x N y silicon oxynitride
  • HMDSO hexamethyldisiloxane
  • polyacrylate polycarbonate
  • polystyrene are included.
  • the thin film transistor array substrate 10 includes a base substrate 11 and a thin film transistor array layer 12 disposed on the base substrate 11.
  • the base substrate 11 may be a rigid substrate or a flexible substrate, and the rigid substrate is preferably a glass substrate, and the flexible substrate is preferably a polyimide film.
  • the material of the pixel defining layer 30 is a transparent organic material.
  • the OLED light-emitting layer 40 includes a hole injection layer (not shown), a hole transport layer (not shown), and a light-emitting layer (not shown) which are stacked in this order from the bottom to the top of the anode 20 (not shown). ), an electron transport layer (not shown), and an electron injection layer (not shown).
  • the anode 20 is a reflective electrode
  • the cathode 50 is a translucent electrode, so that the OLED display panel of the present invention constitutes a top-emitting OLED display panel.
  • the anode 20 includes a layer of two indium tin oxide (ITO) and a layer of silver (Ag) interposed between the layers of indium tin oxide.
  • ITO indium tin oxide
  • Ag silver
  • the material of the cathode 50 is a metal, preferably a magnesium-silver alloy.
  • the surface of the inorganic layer 61 in the thin film encapsulation layer 60 has a diffuse reflection roughness corresponding to the non-pixel region, so that light emitted from the OLED light-emitting layer 40 of each sub-pixel is incident on the region. Diffuse reflection occurs, the light is diverged and atomized everywhere, and cannot be concentratedly reflected and/or refracted, so that it cannot be emitted from adjacent sub-pixels, thereby avoiding light emitted from each sub-pixel from interfering with adjacent sub-pixels and improving single sub-pixels.
  • the color purity of the pixel and the color shift of the OLED display panel is a diffuse reflection roughness corresponding to the non-pixel region, so that light emitted from the OLED light-emitting layer 40 of each sub-pixel is incident on the region. Diffuse reflection occurs, the light is diverged and atomized everywhere, and cannot be concentratedly reflected and/or refracted, so that it cannot be emitted from adjacent sub-pixels, thereby avoiding
  • the present invention provides an OLED display panel and a method of fabricating the same.
  • the surface of the inorganic material layer in the thin film encapsulation layer has a diffuse reflection roughness corresponding to the non-pixel region in the film encapsulation treatment, so that the OLED light-emitting layer from each sub-pixel is obtained.
  • the emitted light will diffusely reflect when it is incident on the area.
  • the light is diverged and atomized everywhere, and cannot be concentrated and reflected and/or refracted, so that it cannot be emitted from adjacent sub-pixels, thus avoiding the emission from each sub-pixel.
  • the surface of the inorganic layer in the thin film encapsulation layer has a diffuse reflection roughness corresponding to the non-pixel region, and the light emitted from each sub-pixel is prevented from interfering with adjacent sub-pixels, and the color of the single sub-pixel is improved. Purity and improved color shift of OLED display panels.

Abstract

提供一种OLED显示面板及其制作方法，OLED显示面板的制作方法通过采用等离子体轰击处理的方法使薄膜封装层（60）中的无机物层（61）的表面对应非像素区的区域具有漫反射粗糙度，使得从每个子像素的OLED发光层（40）发出的光在入射至该区域时均会发生漫反射，光线被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。OLED显示面板的薄膜封装层（60）中的无机物层（61）的表面对应非像素区的区域具有漫反射粗糙度，可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。

Description

OLED显示面板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制作方法。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管(Thin-film transistor，TFT)矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
基于OLED的平板显示及照明领域近年来受到科研和学术界的广泛关注。尤其是最近几年以来，具有广阔前景的柔性OLED显示面板已经崭露头角，成为各大面板厂商竞争的焦点。
目前主流的柔性OLED显示面板的制作方法是：以玻璃基板为载体，在整面玻璃基板上涂布一层聚酰亚胺(PI)膜，对PI膜进行固化，PI膜充当柔性基板，然后在固化的PI膜上制作水氧阻隔层，然后从水氧阻隔层往上依次制作薄膜晶体管层、OLED器件层和薄膜封装(TFE，Thin Film  Encapsulation)层，如此即制得柔性OLED显示母板，通过切割将柔性OLED显示母板制作成各柔性OLED显示面板。
如图1所示，由于柔性OLED显示面板会频繁处于弯折状态，所以往往会出现从一个子像素的OLED发光层100发出的光在封装层200中发生反射和/或折射后，最终一部分光线从相邻子像素出射的现象，从而对相邻子像素的出光造成干扰，导致单个子像素的色纯度下降并且整个柔性OLED显示面板出现色偏问题，影响显示效果。
发明内容
本发明的目的在于提供一种OLED显示面板的制作方法，可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
本发明的目的还在于提供一种OLED显示面板，可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
为实现上述目的，本发明提供一种OLED显示面板的制作方法，包括如下步骤：
步骤1、提供薄膜晶体管阵列基板，在所述薄膜晶体管阵列基板上形成间隔设置的数个阳极；
步骤2、在所述数个阳极与薄膜晶体管阵列基板上形成像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
步骤3、在所述像素定义层的数个开口区中分别形成设于数个阳极上的数个OLED发光层；
步骤4、在所述数个OLED发光层与像素定义层上形成整面覆盖所述数个OLED发光层与像素定义层的阴极；
步骤5、在所述阴极上形成薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度。
所述步骤5中，在形成每个无机物层后，采用掩膜板对每个无机物层进行等离子体轰击处理，所述掩膜板上设有对应于所述像素定义层的非开口区的开孔，每个无机物层的远离所述OLED发光层一侧的表面上对应所述掩膜板的开孔的区域经过等离子体轰击处理后，形成漫反射粗糙度。
所述等离子体为三氟化氮。
所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层。
所述阳极为反射电极，所述阴极为半透明电极。
本发明还提供一种OLED显示面板，包括：
薄膜晶体管阵列基板；
设于所述薄膜晶体管阵列基板上且间隔设置的数个阳极；
设于所述数个阳极与薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
设于所述数个OLED发光层与像素定义层上且整面覆盖所述数个OLED发光层与像素定义层的阴极；
设于所述阴极上的薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度。
所述薄膜封装层中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域的漫反射粗糙度通过等离子体轰击处理获得。
所述等离子体为三氟化氮。
所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层。
所述阳极为反射电极，所述阴极为半透明电极。
本发明还提供一种OLED显示面板，包括：
薄膜晶体管阵列基板；
设于所述薄膜晶体管阵列基板上且间隔设置的数个阳极；
设于所述数个阳极与薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
设于所述数个OLED发光层与像素定义层上且整面覆盖所述数个 OLED发光层与像素定义层的阴极；
设于所述阴极上的薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度；
其中，所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层；
其中，所述阳极为反射电极，所述阴极为半透明电极。
本发明的有益效果：本发明提供的一种OLED显示面板的制作方法，通过采用等离子体轰击处理的方法使薄膜封装层中的无机物层的表面对应非像素区的区域具有漫反射粗糙度，使得从每个子像素的OLED发光层发出的光在入射至该区域时均会发生漫反射，光线被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。本发明提供的一种OLED显示面板，薄膜封装层中的无机物层的表面对应非像素区的区域具有漫反射粗糙度，可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的柔性OLED显示面板中从一个子像素的OLED发光层发出的光在封装层中发生反射和/或折射后一部分光线从相邻的子像素出射的示意图；
图2为本发明的OLED显示面板的制作方法的流程图；
图3为本发明的OLED显示面板的制作方法的步骤1的示意图；
图4为本发明的OLED显示面板的制作方法的步骤2的示意图；
图5为本发明的OLED显示面板的制作方法的步骤3的示意图；
图6为本发明的OLED显示面板的制作方法的步骤4的示意图；
图7为本发明的OLED显示面板的制作方法的步骤5的示意图暨本发明的OLED显示面板的结构示意图；
图8为本发明的OLED显示面板的制作方法的步骤5中采用掩膜板对无机物层进行等离子体轰击处理的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED显示面板的制作方法，包括如下步骤：
步骤1、如图3所示，提供薄膜晶体管阵列基板10，在所述薄膜晶体管阵列基板10上形成间隔设置的数个阳极20。
具体的，所述薄膜晶体管阵列基板10包括衬底基板11与设于所述衬底基板11上的薄膜晶体管阵列层12。
具体的，所述衬底基板11可以为刚性基板或者柔性基板，所述刚性基板优选为玻璃基板，所述柔性基板优选为聚酰亚胺膜。
所述衬底基板11为刚性基板时，本发明后续制得的OLED显示面板为刚性OLED显示面板，所述衬底基板11为柔性基板时，本发明后续制得的OLED显示面板为柔性OLED显示面板。
步骤2、如图4所示，在所述数个阳极20与薄膜晶体管阵列基板10上形成像素定义层30，所述像素定义层30包括分别对应于所述数个阳极20的数个开口区31以及位于所述数个开口区31之间的非开口区32。
具体的，所述像素定义层30的数个开口区31分别对应OLED显示面板的数个子像素区，所述像素定义层30的非开口区32对应OLED显示面板的非像素区。
具体的，所述像素定义层30的材料为透明有机材料。
步骤3、如图5所示，在所述像素定义层30的数个开口区31中分别形成设于数个阳极20上的数个OLED发光层40。
具体的，所述步骤5中，采用蒸镀的方法形成所述数个OLED发光层40。
具体的，所述OLED发光层40包括在所述阳极20上从下到上依次层叠设置的空穴注入层(未图示)、空穴传输层(未图示)、发光层(未图示)、电子传输层(未图示)、及电子注入层(未图示)。
步骤4、如图6所示，在所述数个OLED发光层40与像素定义层30 上形成整面覆盖所述数个OLED发光层40与像素定义层30的阴极50。
具体的，所述阳极20为反射电极，所述阴极50为半透明电极，使得本发明制得的OLED显示面板构成顶发光OLED显示面板。
优选的，所述阳极20包括两氧化铟锡(ITO)层与夹设于两氧化铟锡层之间的银(Ag)层。
具体的，所述阴极50的材料为金属，优选为镁银合金。
步骤5、如图7所示，在所述阴极50上形成薄膜封装层60，所述薄膜封装层60包括层叠且交替设置的多个无机物层61与有机物层62，其中，每个无机物层61的远离所述OLED发光层40一侧的表面上对应于所述像素定义层30的非开口区32的区域具有漫反射粗糙度。
当从一个子像素的OLED发光层40发出的光进入薄膜封装层60后，在每个无机物层61的具有漫反射粗糙度的区域处均会发生漫反射，光线会被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，进而提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
具体的，如图8所示，所述步骤5中，在形成每个无机物层61后，采用掩膜板70对每个无机物层61进行等离子体轰击处理，所述掩膜板70上设有对应于所述像素定义层30的非开口区32的开孔71，每个无机物层61的远离所述OLED发光层40一侧的表面上对应所述掩膜板70的开孔71的区域经过等离子体轰击处理后，形成漫反射粗糙度。
优选的，所述等离子体为三氟化氮(NF3)。
优选的，所述薄膜封装层60中，与所述阴极50接触的结构层以及最外侧的结构层均为无机物层61。
如图7所示，在本发明的一实施例中，所述薄膜封装层60包括两个无机物层61与夹设于两个无机物层61之间的有机物层62。
具体的，所述无机物层61的材料包括氧化硅(SiOx)、氮化硅(SiNx)、及氮氧化硅(SiOxNy)中的至少一种；所述有机物层62的材料包括丙烯酸脂(Acrylic)、六甲基二甲硅醚(HMDSO)、聚丙烯酸酯、聚碳酸脂、及聚苯乙烯中的一种或多种。
具体的，所述薄膜封装层60用于阻挡外界水氧对OLED器件的侵蚀，提高OLED器件的使用寿命。
上述OLED显示面板的制作方法，通过采用等离子体轰击处理的方法使薄膜封装层60中的无机物层61的表面对应非像素区的区域具有漫反射粗糙度，使得从每个子像素的OLED发光层40发出的光在入射至该区域时 均会发生漫反射，光线被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
请参阅图7，基于上述OLED显示面板的制作方法，本发明还提供一种OLED显示面板，包括：
薄膜晶体管阵列基板10；
设于所述薄膜晶体管阵列基板10上且间隔设置的数个阳极20；
设于所述数个阳极20与薄膜晶体管阵列基板10上的像素定义层30，所述像素定义层30包括分别对应于所述数个阳极20的数个开口区31以及位于所述数个开口区31之间的非开口区32；
设于所述像素定义层30的数个开口区31中且分别设于所述数个阳极20上的数个OLED发光层40；
设于所述数个OLED发光层40与像素定义层30上且整面覆盖所述数个OLED发光层40与像素定义层30的阴极50；
设于所述阴极50上的薄膜封装层60，所述薄膜封装层60包括层叠且交替设置的多个无机物层61与有机物层62，其中，每个无机物层61的远离所述OLED发光层40一侧的表面上对应于所述像素定义层30的非开口区32的区域具有漫反射粗糙度。
具体的，所述薄膜封装层60中，每个无机物层61的远离所述OLED发光层40一侧的表面上对应于所述像素定义层30的非开口区32的区域的漫反射粗糙度通过等离子体轰击处理获得。
具体的，所述等离子体为三氟化氮(NF3)。
优选的，所述薄膜封装层60中，与所述阴极50接触的结构层以及最外侧的结构层均为无机物层61。
如图7所示，在本发明的一实施例中，所述薄膜封装层60包括两个无机物层61与夹设于两个无机物层61之间的有机物层62。
具体的，所述无机物层61的材料包括氧化硅(SiOx)、氮化硅(SiNx)、及氮氧化硅(SiOxNy)中的至少一种；所述有机物层62的材料包括丙烯酸脂(Acrylic)、六甲基二甲硅醚(HMDSO)、聚丙烯酸酯、聚碳酸脂、及聚苯乙烯中的一种或多种。
具体的，所述薄膜晶体管阵列基板10包括衬底基板11与设于所述衬底基板11上的薄膜晶体管阵列层12。
具体的，所述衬底基板11可以为刚性基板或者柔性基板，所述刚性基板优选为玻璃基板，所述柔性基板优选为聚酰亚胺膜。
具体的，所述像素定义层30的材料为透明有机材料。
具体的，所述OLED发光层40包括在所述阳极20上从下到上依次层叠设置的空穴注入层(未图示)、空穴传输层(未图示)、发光层(未图示)、电子传输层(未图示)、及电子注入层(未图示)。
具体的，所述阳极20为反射电极，所述阴极50为半透明电极，使得本发明的OLED显示面板构成顶发光OLED显示面板。
优选的，所述阳极20包括两氧化铟锡(ITO)层与夹设于两氧化铟锡层之间的银(Ag)层。
具体的，所述阴极50的材料为金属，优选为镁银合金。
上述OLED显示面板，薄膜封装层60中的无机物层61的表面对应非像素区的区域具有漫反射粗糙度，使得从每个子像素的OLED发光层40发出的光在入射至该区域时均会发生漫反射，光线被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
综上所述，本发明提供一种OLED显示面板及其制作方法。本发明的OLED显示面板的制作方法，通过采用等离子体轰击处理的方法使薄膜封装层中的无机物层的表面对应非像素区的区域具有漫反射粗糙度，使得从每个子像素的OLED发光层发出的光在入射至该区域时均会发生漫反射，光线被四处发散雾化，无法集中的被反射和/或折射，从而无法从相邻的子像素射出，因此可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。本发明的OLED显示面板，薄膜封装层中的无机物层的表面对应非像素区的区域具有漫反射粗糙度，可避免从每个子像素出射的光干扰相邻子像素，提高单个子像素的色纯度并改善OLED显示面板的色偏现象。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED显示面板的制作方法，包括如下步骤：
    步骤1、提供薄膜晶体管阵列基板，在所述薄膜晶体管阵列基板上形成间隔设置的数个阳极；
    步骤2、在所述数个阳极与薄膜晶体管阵列基板上形成像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    步骤3、在所述像素定义层的数个开口区中分别形成设于数个阳极上的数个OLED发光层；
    步骤4、在所述数个OLED发光层与像素定义层上形成整面覆盖所述数个OLED发光层与像素定义层的阴极；
    步骤5、在所述阴极上形成薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度。
  2. 如权利要求1所述的OLED显示面板的制作方法，其中，所述步骤5中，在形成每个无机物层后，采用掩膜板对每个无机物层进行等离子体轰击处理，所述掩膜板上设有对应于所述像素定义层的非开口区的开孔，每个无机物层的远离所述OLED发光层一侧的表面上对应所述掩膜板的开孔的区域经过等离子体轰击处理后，形成漫反射粗糙度。
  3. 如权利要求2所述的OLED显示面板的制作方法，其中，所述等离子体为三氟化氮。
  4. 如权利要求1所述的OLED显示面板的制作方法，其中，所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层。
  5. 如权利要求1所述的OLED显示面板的制作方法，其中，所述阳极为反射电极，所述阴极为半透明电极。
  6. 一种OLED显示面板，包括：
    薄膜晶体管阵列基板；
    设于所述薄膜晶体管阵列基板上且间隔设置的数个阳极；
    设于所述数个阳极与薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
    设于所述数个OLED发光层与像素定义层上且整面覆盖所述数个OLED发光层与像素定义层的阴极；
    设于所述阴极上的薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度。
  7. 如权利要求6所述的OLED显示面板，其中，所述薄膜封装层中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域的漫反射粗糙度通过等离子体轰击处理获得。
  8. 如权利要求7所述的OLED显示面板，其中，所述等离子体为三氟化氮。
  9. 如权利要求6所述的OLED显示面板，其中，所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层。
  10. 如权利要求6所述的OLED显示面板，其中，所述阳极为反射电极，所述阴极为半透明电极。
  11. 一种OLED显示面板，包括：
    薄膜晶体管阵列基板；
    设于所述薄膜晶体管阵列基板上且间隔设置的数个阳极；
    设于所述数个阳极与薄膜晶体管阵列基板上的像素定义层，所述像素定义层包括分别对应于所述数个阳极的数个开口区以及位于所述数个开口区之间的非开口区；
    设于所述像素定义层的数个开口区中且分别设于所述数个阳极上的数个OLED发光层；
    设于所述数个OLED发光层与像素定义层上且整面覆盖所述数个OLED发光层与像素定义层的阴极；
    设于所述阴极上的薄膜封装层，所述薄膜封装层包括层叠且交替设置的多个无机物层与有机物层，其中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域具有漫反射粗糙度；
    其中，所述薄膜封装层中，与所述阴极接触的结构层以及最外侧的结构层均为无机物层；
    其中，所述阳极为反射电极，所述阴极为半透明电极。
  12. 如权利要求11所述的OLED显示面板，其中，所述薄膜封装层中，每个无机物层的远离所述OLED发光层一侧的表面上对应于所述像素定义层的非开口区的区域的漫反射粗糙度通过等离子体轰击处理获得。
  13. 如权利要求12所述的OLED显示面板，其中，所述等离子体为三氟化氮。
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