WO2019218558A1 - Oled封装方法及oled封装结构 - Google Patents

Oled封装方法及oled封装结构 Download PDF

Info

Publication number
WO2019218558A1
WO2019218558A1 PCT/CN2018/106336 CN2018106336W WO2019218558A1 WO 2019218558 A1 WO2019218558 A1 WO 2019218558A1 CN 2018106336 W CN2018106336 W CN 2018106336W WO 2019218558 A1 WO2019218558 A1 WO 2019218558A1
Authority
WO
WIPO (PCT)
Prior art keywords
oled
layer
grooves
surface active
barrier layer
Prior art date
Application number
PCT/CN2018/106336
Other languages
English (en)
French (fr)
Inventor
黄辉
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to US16/307,138 priority Critical patent/US20210119176A1/en
Publication of WO2019218558A1 publication Critical patent/WO2019218558A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED packaging method and an OLED package structure.
  • OLED Organic Light-Emitting Diode
  • organic electroluminescent display also known as an organic electroluminescent display
  • OLED Organic Light-Emitting Diode
  • High definition and contrast ratio, near 180° viewing angle, wide temperature range, flexible display and large-area full-color display, etc., are recognized by the industry as the most promising display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and hole transport, respectively.
  • the layers, electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the encapsulation layer is generally prepared by vacuum deposition or inkjet printing to prepare a barrier layer and a buffer layer, and the package effect is achieved by superposition of several layers, in order to obtain a better buffering effect.
  • Inkjet printing is usually used, but because there is a gap between the inkjet printing heads, the buffer layer after inkjet printing generally flattens the buffer layer material into the device by means of static leveling. Form the purpose of covering the package. Therefore, the packaging time is prolonged, and it takes a long time to prepare to achieve the purpose and the uniformity of the buffer layer film thickness is difficult to ensure.
  • An object of the present invention is to provide an OLED packaging method, in which a surface active layer is formed in a plurality of grooves in a barrier layer, so that a material diffusion speed of the buffer layer is accelerated, and the leveling is more favorable, and the film thickness uniformity of the buffer layer is improved.
  • Another object of the present invention is to provide an OLED package structure in which a plurality of grooves in a barrier layer are formed with a surface active layer, and the buffer layer has a uniform film thickness uniformity.
  • the present invention provides an OLED packaging method, including the following steps:
  • Step S1 providing a substrate, forming an OLED device on the substrate;
  • Step S2 forming a barrier layer covering the OLED device on the substrate, and patterning the barrier layer to form a plurality of grooves on the barrier layer;
  • Step S3 forming a surface active layer in the plurality of grooves
  • Step S4 forming a buffer layer on the barrier layer and the surface active layer.
  • the OLED device has a plurality of sub-pixel regions arranged in an array, the plurality of grooves being disposed corresponding to a plurality of sub-pixel regions.
  • the area of the groove is greater than or equal to the area of the sub-pixel area.
  • the thickness of the surface active layer is equal to the depth of the groove.
  • the surface active layer is formed by coating, spraying or inkjet printing a surfactant in a plurality of grooves.
  • the surfactant is a hydrophilic polymer active material containing a hydroxyl group or a hydrogen ion.
  • the present invention also provides an OLED package structure, comprising: a base substrate, an OLED device disposed on the base substrate, and a thin film encapsulation layer disposed on the base substrate and covering the OLED device;
  • the thin film encapsulation layer includes: at least one barrier layer and at least one buffer layer disposed alternately stacked, and a surface active layer disposed between the barrier layer and the buffer layer and located in the plurality of grooves on the barrier layer Floor.
  • the OLED device has a plurality of sub-pixel regions arranged in an array, the plurality of grooves being disposed corresponding to a plurality of sub-pixel regions.
  • the area of the groove is greater than or equal to the area of the sub-pixel area.
  • the thickness of the surface active layer is equal to the depth of the groove.
  • a plurality of grooves are obtained by patterning a barrier layer formed on an OLED device, a surface active layer is formed in a plurality of grooves, and then a buffer layer is formed, due to the surface
  • the action of the active layer makes the material diffusion speed of the buffer layer faster, and is more conducive to leveling, and improves the film thickness uniformity of the buffer layer.
  • a surface active layer is disposed in a plurality of grooves on the barrier layer in the thin film encapsulation layer, and the material diffusion speed of the buffer layer is accelerated due to the action of the surface active layer, and the leveling is more favorable. Improve the film thickness uniformity of the buffer layer.
  • step S1 of the OLED packaging method of the present invention is a schematic diagram of step S1 of the OLED packaging method of the present invention.
  • step S2 of the OLED packaging method of the present invention is a schematic diagram of step S2 of the OLED packaging method of the present invention.
  • step S3 of the OLED packaging method of the present invention is a schematic diagram of step S3 of the OLED packaging method of the present invention.
  • step S4 of the OLED packaging method of the present invention is a schematic diagram of step S4 of the OLED packaging method of the present invention and a schematic diagram of the OLED package structure of the present invention
  • FIG. 6 is a top plan view of a barrier layer of an OLED package structure of the present invention.
  • the OLED packaging method of the present invention includes the following steps:
  • Step S1 please refer to FIG. 2, providing a substrate 10 on which the OLED device 20 is formed;
  • Step S2 please refer to FIG. 3, forming a barrier layer 31 covering the OLED device 20 on the substrate 10, and patterning the barrier layer 31 to form a plurality of grooves 311 on the barrier layer 31;
  • Step S3 please refer to FIG. 4, forming a surface active layer 32 in a plurality of grooves 311;
  • Step S4 referring to FIG. 5, a buffer layer 33 is formed on the barrier layer 31 and the surface active layer 32.
  • the barrier layer 31 formed on the OLED device 20 is patterned to obtain a plurality of grooves 311, the surface active layer 32 is formed in the plurality of grooves 311, and then the buffer layer 33 is formed, due to surface activity.
  • the effect of the layer 32 is such that the material diffusion speed of the buffer layer 33 is increased, and the leveling is more favorable, and the film thickness uniformity of the buffer layer 33 is improved.
  • the OLED packaging method further includes the step S5, repeating the steps S2-S4, forming a structure in which the multi-layer barrier layer 31 and the multi-layer buffer layer 33 are alternately stacked on the OLED device 20, thereby improving the ability to block water oxygen.
  • the OLED device 20 has a plurality of sub-pixel regions 21 arranged in an array, and the plurality of grooves 311 are disposed corresponding to the plurality of sub-pixel regions 21 such that the surface active layer 32 covers a plurality of sub-pixels.
  • the region 21, makes the film thickness uniformity of the buffer layer 33 on the plurality of sub-pixel regions 21 uniform, improving the light-emitting uniformity of the OLED device 20.
  • the area of the groove 311 is greater than or equal to the area of the sub-pixel region 21, which facilitates the surface layer 32 to completely cover the plurality of sub-pixel regions 21.
  • the formation of the barrier layer 31 covering the OLED device 20 is formed on the substrate 10 by chemical vapor deposition.
  • the surface active layer 32 is formed by coating, spraying or inkjet printing a surfactant in the plurality of grooves 311.
  • the surfactant is a hydrophilic polymer active material containing a hydroxyl group or a hydrogen ion (H+), preferably a polyol or an ether material (such as sodium dodecylbenzenesulfonate or a homolog thereof),
  • H+ hydrogen ion
  • ether material such as sodium dodecylbenzenesulfonate or a homolog thereof
  • the thickness of the surface active layer 32 is equal to the depth of the groove 311, which facilitates the diffusion of the material of the buffer layer 33 and ensures the uniformity of the film thickness of the buffer layer 33.
  • the buffer layer material is formed by coating or ink-jet printing the buffer layer material on the barrier layer 31 and the surface active layer 32, and the buffer layer 33 is formed after standing and leveling.
  • the step S1 further includes the step of forming the TFT layer 40 between the base substrate 10 and the OLED device 20.
  • the present invention further provides an OLED package structure, including: a substrate substrate 10 , an OLED device 20 disposed on the substrate substrate 10 , and the substrate substrate 10 . Covering the thin film encapsulation layer 30 of the OLED device 20;
  • the thin film encapsulation layer 30 includes at least one barrier layer 31 and at least one buffer layer 33 and a plurality of buffer layers 33 disposed between the barrier layer 31 and the buffer layer 33 and located on the barrier layer 31.
  • the surface active layer 32 is disposed, and the material of the buffer layer 33 is made due to the action of the surface active layer 32.
  • the diffusion speed is increased, and the leveling is more favorable, and the film thickness uniformity of the buffer layer 33 is improved.
  • the OLED device 20 has a plurality of sub-pixel regions 21 arranged in an array, and the plurality of grooves 311 are disposed corresponding to the plurality of sub-pixel regions 21 such that the surface active layer 32 covers a plurality of sub-pixels.
  • the region 21, makes the film thickness uniformity of the buffer layer 33 on the plurality of sub-pixel regions 21 uniform, improving the light-emitting uniformity of the OLED device 20.
  • the area of the groove 311 is greater than or equal to the area of the sub-pixel region 21, which facilitates the surface layer 32 to completely cover the plurality of sub-pixel regions 21.
  • the formation of the barrier layer 31 covering the OLED device 20 is formed on the substrate 10 by chemical vapor deposition.
  • the surface active layer 32 is formed by coating, spraying, or inkjet printing a surfactant in the plurality of grooves 311.
  • the surfactant is a hydrophilic polymer active material containing a hydroxyl group or a hydrogen ion (H+), preferably a polyol or an ether material (such as sodium dodecylbenzenesulfonate or a homolog thereof),
  • H+ hydrogen ion
  • ether material such as sodium dodecylbenzenesulfonate or a homolog thereof
  • the thickness of the surface active layer 32 is equal to the depth of the groove 311, which facilitates the diffusion of the material of the buffer layer 33 and ensures the uniformity of the film thickness of the buffer layer 33.
  • the buffer layer 33 is formed after standing and leveling.
  • the OLED package structure further includes a TFT layer 40 disposed between the base substrate 10 and the OLED device 20.
  • the OLED packaging method of the present invention obtains a plurality of grooves by patterning a barrier layer formed on the OLED device, forms a surface active layer in the plurality of grooves, and then forms a buffer layer due to surface activity.
  • the effect of the layer is such that the material diffusion speed of the buffer layer is increased, and the leveling is more favorable, and the film thickness uniformity of the buffer layer is improved.
  • a surface active layer is disposed in a plurality of grooves on the barrier layer in the thin film encapsulation layer, and the material diffusion speed of the buffer layer is accelerated due to the action of the surface active layer, and the leveling is more favorable. Improve the film thickness uniformity of the buffer layer.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED封装方法及OLED封装结构。该OLED封装方法通过对形成于OLED器件上的阻挡层（31）进行图案化得到多个凹槽（311），在多个凹槽（311）中形成表面活性层（32），然后制作缓冲层（33），由于表面活性层（32）的作用，使得缓冲层（33）的材料扩散速度加快，且更利于流平，提高缓冲层（33）的膜厚均匀性。

Description

OLED封装方法及OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED封装方法及OLED封装结构。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
在现有的OLED薄膜封装中，封装层一般采用真空沉积或者喷墨打印的方法制备阻挡(Barrier)层以及缓冲(Buffer)层，通过数层的叠加达到封装效果，为了得到较好的缓冲作用，通常会采用喷墨打印的方法，但是因为喷墨打印喷头之间会有间隙，所以喷墨打印之后的缓冲层，一般是通过静止流平的方式使缓冲层材料完全平铺到器件中，形成覆盖封装的目的。因此延长了封装的时间，需要较长时间的制备才可达到目的且缓冲层膜厚的均一性较难保证。
发明内容
本发明的目的在于提供一种OLED封装方法，在阻挡层中的多个凹槽中形成表面活性层，使得缓冲层的材料扩散速度加快，且更利于流平，提 高缓冲层的膜厚均匀性。
本发明的目的还在于提供一种OLED封装结构，其阻挡层中的多个凹槽中形成有表面活性层，缓冲层的膜厚均匀性好。
为实现上述目的，本发明提供了一种OLED封装方法，包括如下步骤：
步骤S1、提供基板，在所述基板上形成OLED器件；
步骤S2、在所述基板上形成覆盖OLED器件的阻挡层，并对阻挡层进行图案化，形成位于阻挡层上的多个凹槽；
步骤S3、在多个凹槽中形成表面活性层；
步骤S4、在所述阻挡层及表面活性层上形成缓冲层。
所述OLED器件具有多个呈阵列排布的子像素区，所述多个凹槽对应多个子像素区设置。
所述凹槽的面积大于或等于子像素区的面积。
所述表面活性层的厚度等于凹槽的深度。
所述步骤S3中，在多个凹槽中通过涂布、喷涂或喷墨打印表面活性剂形成表面活性层。
所述表面活性剂为含有羟基或者氢离子的亲水性高分子活性材料。
本发明还提供一种OLED封装结构，包括：衬底基板、设于所述衬底基板上的OLED器件以及设于所述衬底基板上并覆盖OLED器件的薄膜封装层；
所述薄膜封装层包括：交替层叠设置的至少一层阻挡层与至少一层缓冲层以及设于所述阻挡层与缓冲层之间并位于所述阻挡层上的多个凹槽中的表面活性层。
所述OLED器件具有多个呈阵列排布的子像素区，所述多个凹槽对应多个子像素区设置。
所述凹槽的面积大于或等于子像素区的面积。
所述表面活性层的厚度等于凹槽的深度。
本发明的有益效果：本发明的OLED封装方法，通过对形成于OLED器件上的阻挡层进行图案化得到多个凹槽，在多个凹槽中形成表面活性层，然后制作缓冲层，由于表面活性层的作用，使得缓冲层的材料扩散速度加快，且更利于流平，提高缓冲层的膜厚均匀性。本发明的OLED封装结构，其薄膜封装层中的阻挡层上的多个凹槽中设置有表面活性层，由于表面活性层的作用，使得缓冲层的材料扩散速度加快，且更利于流平，提高缓冲层的膜厚均匀性。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的OLED封装方法的流程图；
图2为本发明的OLED封装方法的步骤S1的示意图；
图3为本发明的OLED封装方法的步骤S2的示意图；
图4为本发明的OLED封装方法的步骤S3的示意图；
图5为本发明的OLED封装方法的步骤S4的示意图暨本发明的OLED封装结构的示意图；
图6为本发明的OLED封装结构的阻挡层的俯视图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明的OLED封装方法包括如下步骤：
步骤S1、请参阅图2，提供基板10，在所述基板10上形成OLED器件20；
步骤S2、请参阅图3，在所述基板10上形成覆盖OLED器件20的阻挡层31，并对阻挡层31进行图案化，形成位于阻挡层31上的多个凹槽311；
步骤S3、请参阅图4，在多个凹槽311中形成表面活性层32；
步骤S4、请参阅图5，在所述阻挡层31及表面活性层32上形成缓冲层33。
需要说明的是，本发明对形成于OLED器件20上的阻挡层31进行图案化得到多个凹槽311，在多个凹槽311中形成表面活性层32，然后制作缓冲层33，由于表面活性层32的作用，使得缓冲层33的材料扩散速度加快，且更利于流平，提高缓冲层33的膜厚均匀性。
具体地，所述OLED封装方法还包括步骤S5、重复步骤S2-S4，在OLED器件20上形成多层阻挡层31与多层缓冲层33交替层叠设置的结构，提高阻挡水氧的能力。
具体地，请参阅图6，所述OLED器件20具有多个呈阵列排布的子像素区21，所述多个凹槽311对应多个子像素区21设置，使得表面活性层32覆盖多个子像素区21，进而使得多个子像素区21上的缓冲层33的膜厚 均匀性一致，提高OLED器件20的出光均匀性。
进一步地，所述凹槽311的面积大于或等于子像素区21的面积，有利于表面活性层32完全覆盖多个子像素区21。
具体地，所述步骤S2中，通过化学气相淀积在所述基板10上形成覆盖OLED器件20的形成阻挡层31。
具体地，所述步骤S3中，在多个凹槽311中通过涂布、喷涂或喷墨打印表面活性剂形成表面活性层32。
进一步地，所述表面活性剂为含有羟基或者氢离子(H+)的亲水性高分子活性材料，优选为多元醇或者醚类材料(如十二烷基苯磺酸钠或者其同系物)，可与缓冲层33中的羟基和氢离子(H+)形成氢键，加强结合能力，改善封装效果。
优选地，所述表面活性层32的厚度等于凹槽311的深度，有利于缓冲层33材料的扩散，保证缓冲层33的膜厚均匀性。
具体地，所述步骤S4中，通过在所述阻挡层31及表面活性层32上涂布或喷墨打印缓冲层材料，静置流平后形成缓冲层33。
具体地，所述步骤S1还包括在衬底基板10与OLED器件20之间形成TFT层40的步骤。
请参阅图5，基于上述OLED封装方法，本发明还提供一种OLED封装结构，包括：衬底基板10、设于衬底基板10上的OLED器件20以及设于所述衬底基板10上并覆盖OLED器件20的薄膜封装层30；
所述薄膜封装层30包括：交替层叠设置的至少一层阻挡层31与至少一层缓冲层33以及设于所述阻挡层31与缓冲层33之间并位于所述阻挡层31上的多个凹槽311中的表面活性层32。
需要说明的是，本发明的OLED封装结构的薄膜封装层30中的阻挡层31上的多个凹槽311中设置有表面活性层32，由于表面活性层32的作用，使得缓冲层33的材料扩散速度加快，且更利于流平，提高缓冲层33的膜厚均匀性。
具体地，请参阅图6，所述OLED器件20具有多个呈阵列排布的子像素区21，所述多个凹槽311对应多个子像素区21设置，使得表面活性层32覆盖多个子像素区21，进而使得多个子像素区21上的缓冲层33的膜厚均匀性一致，提高OLED器件20的出光均匀性。
进一步地，所述凹槽311的面积大于或等于子像素区21的面积，有利于表面活性层32完全覆盖多个子像素区21。
具体地，通过化学气相淀积在所述基板10上形成覆盖OLED器件20 的形成阻挡层31。
具体地，在多个凹槽311中通过涂布、喷涂或喷墨打印表面活性剂形成表面活性层32。
进一步地，所述表面活性剂为含有羟基或者氢离子(H+)的亲水性高分子活性材料，优选为多元醇或者醚类材料(如十二烷基苯磺酸钠或者其同系物)，可与缓冲层33中的羟基和氢离子(H+)形成氢键，加强结合能力，改善封装效果。
优选地，所述表面活性层32的厚度等于凹槽311的深度，有利于缓冲层33材料的扩散，及保证缓冲层33的膜厚均匀性。
具体地，通过在所述阻挡层31及表面活性层32上涂布或喷墨打印缓冲层材料，静置流平后形成缓冲层33。
具体地，所述OLED封装结构还包括设于所述衬底基板10与OLED器件20之间的TFT层40。
综上所述，本发明的OLED封装方法，通过对形成于OLED器件上的阻挡层进行图案化得到多个凹槽，在多个凹槽中形成表面活性层，然后制作缓冲层，由于表面活性层的作用，使得缓冲层的材料扩散速度加快，且更利于流平，提高缓冲层的膜厚均匀性。本发明的OLED封装结构，其薄膜封装层中的阻挡层上的多个凹槽中设置有表面活性层，由于表面活性层的作用，使得缓冲层的材料扩散速度加快，且更利于流平，提高缓冲层的膜厚均匀性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种OLED封装方法，包括如下步骤：
    步骤S1、提供基板，在所述基板上形成OLED器件；
    步骤S2、在所述基板上形成覆盖OLED器件的阻挡层，并对阻挡层进行图案化，形成位于阻挡层上的多个凹槽；
    步骤S3、在多个凹槽中形成表面活性层；
    步骤S4、在所述阻挡层及表面活性层上形成缓冲层。
  2. 如权利要求1所述的OLED封装方法，其中，所述OLED器件具有多个呈阵列排布的子像素区，所述多个凹槽对应多个子像素区设置。
  3. 如权利要求2所述的OLED封装方法，其中，所述凹槽的面积大于或等于子像素区的面积。
  4. 如权利要求1所述的OLED封装方法，其特征在于，所述表面活性层的厚度等于凹槽的深度。
  5. 如权利要求1所述的OLED封装方法，其中，所述步骤S3中，在多个凹槽中通过涂布、喷涂或喷墨打印表面活性剂形成表面活性层。
  6. 如权利要求5所述的OLED封装方法，其中，所述表面活性剂为含有羟基或者氢离子的亲水性高分子活性材料。
  7. 一种OLED封装结构，包括：衬底基板、设于所述衬底基板上的OLED器件以及设于所述衬底基板上并覆盖OLED器件的薄膜封装层；
    所述薄膜封装层包括：交替层叠设置的至少一层阻挡层与至少一层缓冲层以及设于所述阻挡层与缓冲层之间并位于所述阻挡层上的多个凹槽中的表面活性层。
  8. 如权利要求7所述的OLED封装结构，其中，所述OLED器件具有多个呈阵列排布的子像素区，所述多个凹槽对应多个子像素区设置。
  9. 如权利要求8所述的OLED封装结构，其中，所述凹槽的面积大于或等于子像素区的面积。
  10. 如权利要求7所述的OLED封装结构，其中，所述表面活性层的厚度等于凹槽的深度。
PCT/CN2018/106336 2018-05-16 2018-09-18 Oled封装方法及oled封装结构 WO2019218558A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/307,138 US20210119176A1 (en) 2018-05-16 2018-09-18 Oled encapsulation method and oled encapsulation structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810469332.2A CN108539057B (zh) 2018-05-16 2018-05-16 Oled封装方法及oled封装结构
CN201810469332.2 2018-05-16

Publications (1)

Publication Number Publication Date
WO2019218558A1 true WO2019218558A1 (zh) 2019-11-21

Family

ID=63472156

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/106336 WO2019218558A1 (zh) 2018-05-16 2018-09-18 Oled封装方法及oled封装结构

Country Status (3)

Country Link
US (1) US20210119176A1 (zh)
CN (1) CN108539057B (zh)
WO (1) WO2019218558A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108539057B (zh) * 2018-05-16 2019-07-02 深圳市华星光电技术有限公司 Oled封装方法及oled封装结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887446A (zh) * 2014-03-10 2014-06-25 京东方科技集团股份有限公司 一种oled器件的封装结构及其封装方法、发光器件
CN105118933A (zh) * 2015-09-02 2015-12-02 深圳市华星光电技术有限公司 薄膜封装方法及有机发光装置
CN107275515A (zh) * 2017-06-20 2017-10-20 深圳市华星光电技术有限公司 Oled器件封装方法、结构、oled器件及显示屏
CN108539057A (zh) * 2018-05-16 2018-09-14 深圳市华星光电技术有限公司 Oled封装方法及oled封装结构

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623338B1 (ko) * 2004-10-21 2006-09-19 엘지전자 주식회사 유기 전계 발광 소자 및 이를 제조하는 방법
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
CN105977398B (zh) * 2016-07-08 2018-01-12 京东方科技集团股份有限公司 一种封装盖板及其制备方法、显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103887446A (zh) * 2014-03-10 2014-06-25 京东方科技集团股份有限公司 一种oled器件的封装结构及其封装方法、发光器件
CN105118933A (zh) * 2015-09-02 2015-12-02 深圳市华星光电技术有限公司 薄膜封装方法及有机发光装置
CN107275515A (zh) * 2017-06-20 2017-10-20 深圳市华星光电技术有限公司 Oled器件封装方法、结构、oled器件及显示屏
CN108539057A (zh) * 2018-05-16 2018-09-14 深圳市华星光电技术有限公司 Oled封装方法及oled封装结构

Also Published As

Publication number Publication date
US20210119176A1 (en) 2021-04-22
CN108539057A (zh) 2018-09-14
CN108539057B (zh) 2019-07-02

Similar Documents

Publication Publication Date Title
WO2018113019A1 (zh) Oled显示面板及其制作方法
WO2018094801A1 (zh) Oled显示装置及其制作方法
WO2018113018A1 (zh) Oled显示面板及其制作方法
US9954170B2 (en) Recess structure for print deposition process and manufacturing method thereof
US10510990B2 (en) Groove structure for printing OLED display and manufacturing method for OLED display
WO2017190373A1 (zh) 自发光型显示装置及其制作方法
WO2017206216A1 (zh) Oled显示装置
CN108666349B (zh) 彩色滤光基板及其制作方法与woled显示器
WO2018107535A1 (zh) Oled封装方法与oled封装结构
WO2018068379A1 (zh) 透明oled显示器及其制作方法
CN107623021B (zh) Oled显示器的制作方法及oled显示器
WO2017210927A1 (zh) 自发光显示装置
WO2019041578A1 (zh) Oled基板及其制作方法
WO2018090444A1 (zh) Oled基板及其制作方法
US20190067389A1 (en) Oled substrate and fabrication method thereof
WO2020237952A1 (zh) 双面显示面板及其制备方法、显示装置
WO2018113005A1 (zh) Oled封装方法与oled封装结构
JP2017092213A (ja) 有機電界発光素子、表示装置および有機電界発光素子の製造方法
WO2020077698A1 (zh) 一种有机发光二极管器件的封装结构及其制作方法
WO2019218558A1 (zh) Oled封装方法及oled封装结构
CN108565351B (zh) Oled显示装置及其制作方法
KR101908512B1 (ko) 유기 전계 발광 표시 패널 및 그의 제조 방법
US10109820B2 (en) Array substrate and manufacturing method thereof, and display device
KR101681454B1 (ko) 유기전계발광 표시장치 및 그 제조 방법
KR101318745B1 (ko) 유기 전계발광표시소자 및 그 제조방법

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18919202

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18919202

Country of ref document: EP

Kind code of ref document: A1