WO2017206216A1 - Oled显示装置 - Google Patents

Oled显示装置 Download PDF

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WO2017206216A1
WO2017206216A1 PCT/CN2016/086730 CN2016086730W WO2017206216A1 WO 2017206216 A1 WO2017206216 A1 WO 2017206216A1 CN 2016086730 W CN2016086730 W CN 2016086730W WO 2017206216 A1 WO2017206216 A1 WO 2017206216A1
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quantum dot
oled
layer
display device
encapsulation layer
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PCT/CN2016/086730
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English (en)
French (fr)
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陈黎暄
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深圳市华星光电技术有限公司
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Priority to US15/119,381 priority Critical patent/US10164204B2/en
Publication of WO2017206216A1 publication Critical patent/WO2017206216A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display device.
  • OLED display devices have self-luminous, low driving voltage, high luminous efficiency, short response time, high definition and contrast, near 180° viewing angle, wide temperature range, and flexible display With many advantages such as large-area full-color display, it is recognized by the industry as the most promising display device.
  • An OLED display device is a self-luminous type display device, and generally includes a pixel electrode respectively serving as an anode, a cathode, and a common electrode, and an organic light-emitting layer disposed between the pixel electrode and the common electrode, so that an appropriate voltage is applied to When the anode and the cathode are used, light is emitted from the organic light-emitting layer.
  • the organic light-emitting layer includes a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light-emitting layer provided on the hole transport layer, and an electron transport layer provided on the light-emitting layer.
  • the electron injection layer on the electron transport layer has a light-emitting mechanism in which electrons and holes are injected from the cathode and the anode to the electron injection layer and the hole injection layer, respectively, and the electrons and holes pass through the electron transport layer and
  • the hole transport layer migrates to the light-emitting layer and meets in the light-emitting layer to form excitons and excite the light-emitting molecules, which undergo radiation relaxation to emit visible light.
  • the OLED device is classified into a top emission OLED and a Bottom emission OLED according to the manner in which the light is emitted.
  • the light emitted by the top-emitting OLED is emitted from the top electrode thereof, and the light emitted from the bottom-emitting OLED is emitted from the substrate side at the bottom thereof.
  • the top-emitting OLED has a high aperture ratio and luminous efficiency. Since the OLED device is easily affected by the external environment such as water vapor and oxygen, the service life is shortened. Usually, after the OLED device is fabricated, a package structure is disposed outside the metal electrode at the top.
  • Quantum dots (QDs) luminescent materials are a new technology applied in the field of display technology. Quantum dot luminescent materials adhere to quantum size effects, the properties of which vary with the size of the quantum dots. When stimulated by light or electricity, quantum dots emit colored light. The color of the light is related to its nature, so it can be controlled by changing its size. Quantum dot luminescent materials have the advantages of concentrated luminescence spectrum and high color purity. The use of quantum dot luminescent materials in the field of display technology can greatly improve the color gamut of traditional displays and enhance the color reproduction capability of displays, and has become a hot spot in the industry.
  • An object of the present invention is to provide an OLED display device which has a simple structure, a high display color gamut, and high product competitiveness.
  • the present invention firstly provides an OLED display device, comprising: a substrate, an OLED layer disposed on the substrate, and a quantum dot encapsulation layer disposed on the substrate and covering the OLED layer on the OLED layer ;
  • the OLED layer includes a plurality of red OLEDs, green OLEDs, and blue OLEDs arranged in an array;
  • the quantum dot encapsulation layer contains a quantum dot material distributed in a region of the quantum dot encapsulation layer corresponding to the blue OLED;
  • the blue OLED emits blue light at the top to excite the quantum dot material in the quantum dot encapsulation layer to emit light.
  • the substrate is a TFT array substrate.
  • the quantum dot encapsulation layer comprises a plurality of alternately stacked organic layer and an inorganic layer; the quantum dot material is evenly distributed in a region of the at least one organic layer corresponding to the blue OLED to form a content sub-dip film unit;
  • the OLED display device is a flexible display device, and further includes a barrier film disposed on the quantum dot encapsulation layer.
  • the quantum dot encapsulation layer includes an organic insulating layer; the quantum dot material is evenly distributed in a region of the organic insulating layer corresponding to the upper portion of the blue OLED, and constitutes a content sub-dip film unit;
  • the OLED display device further includes an encapsulant disposed on the quantum dot encapsulation layer and a package cover disposed on the encapsulant.
  • the content sub-dot film unit in the quantum dot encapsulation layer is formed by inkjet printing.
  • the present invention further provides another OLED display device, comprising: a substrate, an OLED layer disposed on the substrate, a quantum dot encapsulation layer disposed on the substrate, and an OLED layer covering the OLED layer; a color filter on the quantum dot encapsulation layer;
  • the OLED layer includes a plurality of white light OLEDs arranged in an array
  • the quantum dot encapsulation layer contains a quantum dot material distributed in a region of the quantum dot encapsulation layer corresponding to the OLED layer;
  • the white light OLED emits white light from the top thereof to excite the quantum dot material in the quantum dot encapsulation layer to emit light.
  • the substrate is a TFT array substrate.
  • the quantum dot encapsulation layer includes a plurality of organic layers alternately stacked, and an inorganic layer;
  • the quantum dot material is uniformly distributed in at least one organic layer to form a content sub-dip film unit;
  • the OLED display device is a flexible display device, and further includes a barrier film disposed on the color filter.
  • the encapsulation layer comprises an organic insulating layer; the quantum dot material is evenly distributed in the organic insulating layer to form a content sub-point film unit;
  • the OLED display device further includes an encapsulant disposed on the color filter and a package cover disposed on the encapsulant.
  • the content sub-dot film unit in the quantum dot encapsulation layer is formed by inkjet printing.
  • the present invention also provides an OLED display device, comprising: a substrate, an OLED layer disposed on the substrate, and a quantum dot encapsulation layer disposed on the substrate and the OLED layer to cover the OLED layer;
  • the OLED layer includes a plurality of red OLEDs, green OLEDs, and blue OLEDs arranged in an array;
  • the quantum dot encapsulation layer contains a quantum dot material distributed in a region of the quantum dot encapsulation layer corresponding to the blue OLED;
  • the blue light OLED emits blue light at the top to excite the quantum dot material in the quantum dot encapsulation layer to emit light;
  • the substrate is a TFT array substrate
  • the quantum dot encapsulation layer comprises a plurality of organic layers alternately stacked, and an inorganic layer; the quantum dot material is uniformly distributed in a region corresponding to the blue OLED in at least one organic layer to form a content sub-dip film unit ;
  • the OLED display device is a flexible display device, and further includes a barrier film disposed on the quantum dot encapsulation layer.
  • the OLED display device comprises a substrate, an OLED layer disposed on the substrate, and a quantum dot encapsulation layer covering the OLED layer, wherein the quantum dot encapsulation layer contains a quantum dot material.
  • the OLED layer emits blue light or white light to excite the quantum dot material of the quantum dot encapsulation layer to emit light, and achieves high color gamut color display without adding extra structure, and the product has high competitiveness.
  • FIG. 1 is a schematic structural view of a first embodiment of an OLED display device of the present invention
  • FIG. 2 is a schematic diagram of an optical path for realizing color display in the first embodiment of the OLED display device of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of an OLED display device of the present invention.
  • FIG. 4 is a schematic diagram of an optical path for realizing color display in a second embodiment of the OLED display device of the present invention.
  • FIG. 5 is a schematic structural view of a third embodiment of an OLED display device of the present invention.
  • FIG. 6 is a schematic diagram of an optical path for realizing color display in a third embodiment of the OLED display device of the present invention.
  • FIG. 7 is a schematic structural view of a fourth embodiment of an OLED display device of the present invention.
  • FIG. 8 is a schematic diagram of an optical path for realizing color display in a fourth embodiment of the OLED display device of the present invention.
  • the OLED display device of the present embodiment is a flexible OLED display device, including: a substrate 1 and an OLED layer 2 disposed on the substrate 1 And a quantum dot encapsulation layer 3 covering the OLED layer 2 on the substrate 1 and the OLED layer 2, and a barrier film 5 disposed on the quantum dot encapsulation layer 3.
  • the OLED layer 2 includes a plurality of red OLEDs 21, green OLEDs 22, and blue OLEDs 23 arranged in an array;
  • the quantum dot encapsulation layer 3 contains a quantum dot material 40 distributed in a region of the quantum dot encapsulation layer 3 corresponding to the blue OLED 23 .
  • the blue light OLED 23 emits blue light at the top, and the quantum dot material 40 in the quantum dot encapsulation layer 3 is excited to emit light, thereby effectively improving the color gamut of the OLED display device and improving the competitiveness of the product.
  • the substrate 1 is a TFT array substrate, and the TFTs thereon respectively drive the red OLED 21, the green OLED 22, and the blue OLED 23 of the OLED layer 2 to emit red, green, and blue light.
  • the quantum dot encapsulation layer 3 includes a plurality of alternately stacked organic layer 31 and an inorganic layer 32; the quantum dot material 40 is uniformly distributed in an area of the at least one organic layer 31 corresponding to the blue OLED 23, Thereby forming a content sub-dot film unit; wherein the inorganic
  • the material layer 32 is made of silicon nitride (SiNx) and formed by chemical vapor deposition (CVD);
  • the organic layer 31 is a polymer material, which is spin-coated or ink-jet printed ( The way of Ink-Jet Printing, IJP) is formed.
  • the content sub-dot film unit in the quantum dot encapsulation layer 3 is formed by inkjet printing, and the specific manufacturing process is: doping the quantum dot material 40 into the polymer material of the organic material layer 31. And forming a content sub-dot film unit on the organic layer 31 by inkjet printing corresponding to the upper portion of the blue OLED 23, and then the quantum dot material 40 is uniformly distributed in the organic layer 31 corresponding to the blue OLED 23 The region; since the quantum dot material 40 can be uniformly and efficiently dispersed in the spray solvent, the manufacturing process is simple and does not cause contamination to other materials.
  • the OLED display device of the embodiment is used for a large-sized OLED display device, including a substrate 1.
  • the quantum dot encapsulation layer 3' contains a quantum dot material 40, and the quantum dot material 40 is distributed on the quantum dot encapsulation layer 3'
  • the middle corresponds to the area above the blue OLED 23 .
  • the quantum dot encapsulation layer 3 ′ is a single layer structure, and includes an organic insulating layer.
  • the organic insulating layer is an organic insulating material.
  • the quantum dot material 40 is uniformly distributed on the organic insulating layer. The corresponding corresponds to the area above the blue OLED 23, thereby constituting the content sub-point film unit.
  • the content sub-dot film unit in the quantum dot encapsulation layer 3' is formed by inkjet printing. The rest are the same as the first embodiment, and will not be described again here.
  • the OLED display device of the present embodiment is a flexible OLED display device and is a white light OLED display device.
  • the OLED display device specifically includes: a substrate 1 An OLED layer 2 ′ disposed on the substrate 1 , a quantum dot encapsulation layer 3 ′′ disposed on the substrate 1 and the OLED layer 2 ′ covering the OLED layer 2 ′, and being disposed on the quantum dot encapsulation layer
  • the 3" upper color filter 4 and the barrier film 5 provided on the color filter 4.
  • the OLED layer 2' includes a plurality of white OLEDs 21' arranged in an array.
  • the quantum dot encapsulation layer 3" contains a quantum dot material 40, and the quantum dot material 40 is distributed in a region of the quantum dot encapsulation layer 3" corresponding to the OLED layer 2'.
  • the color filter 4 includes red, green, and blue photoresist units 41, 42, 43 which are alternately arranged.
  • the white light OLED 21 ′ emits white light from the top thereof, and the quantum dot material 40 in the quantum dot encapsulation layer 3 ′ is excited to emit light, and the excitation light passes through the red, green, and color filters 4 .
  • the blue photoresist units 41, 42, and 43 respectively emit red, green, and blue lights to realize color display, and at the same time, can effectively enhance the color gamut of the OLED display device and enhance the competitiveness of the product.
  • the substrate 1 is a TFT array substrate on which a TFT driving the white OLED 21' of the OLED layer 2' emits white light.
  • the quantum dot encapsulation layer 3" includes a plurality of alternately stacked organic layer 31 and an inorganic layer 32; the quantum dot material 40 is uniformly distributed in at least one organic layer 31 to constitute a content sub-dip film unit.
  • the material of the inorganic layer 32 is silicon nitride, which is formed by chemical vapor deposition; and the organic layer 31 is a polymer material, which is formed by spin coating or inkjet printing.
  • the content of the quantum dot encapsulation layer 3" is formed by inkjet printing, and the specific fabrication process is: doping the quantum dot material 40 with the polymer material of the organic layer 31. And then forming the content sub-dot film unit in the organic layer 31 by inkjet printing; since the quantum dot material 40 can be uniformly and efficiently dispersed in the spraying solvent, the manufacturing process is simple, and at the same time, it is not Material causes pollution.
  • FIG. 7 is a schematic structural diagram of a fourth embodiment of an OLED display device according to the present invention.
  • the OLED display device of the embodiment is used for a large-sized OLED display device, including a substrate 1.
  • An OLED layer 2 ′ on the substrate 1 a quantum dot encapsulation layer 3 ′′ disposed on the substrate 1 and the OLED layer 2 ′ covering the OLED layer 2 ′, and the quantum dot encapsulation layer 3
  • the quantum dot encapsulation layer 3"' contains quantum dot material 40, which is distributed in a region of the quantum dot encapsulation layer 3"' corresponding to the OLED layer 2'.
  • the quantum dot encapsulation layer 3"' is a single layer structure including an organic insulating layer, and the organic insulating layer is an organic insulating material. As shown in FIG. 8, the quantum dot material 40 is uniformly distributed in the organic insulating layer. In the layer, thereby constituting the content sub-point membrane unit.
  • the content sub-dot film unit in the quantum dot encapsulation layer 3"' is formed by inkjet printing. The rest are the same as the third embodiment, and details are not described herein.
  • the OLED display device of the present invention comprises a substrate, an OLED layer disposed on the substrate, and a quantum dot encapsulation layer covering the OLED layer, wherein the quantum dot encapsulation layer contains a quantum dot material, and the OLED layer emits
  • the blue or white light excites the quantum dot material of the quantum dot encapsulation layer to emit light, realizes high color gamut color display and competes with the product without adding additional structure. High force.

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Abstract

提供一种OLED显示装置，包括基板（1）、设置于所述基板（1）上的OLED层（2）、及覆盖所述OLED层（2）的量子点封装层（3），该量子点封装层（3）中含有量子点材料（40），OLED层（2）发出的蓝光或白光激发该量子点封装层（3）的量子点材料（40）发光，在不增加额外结构的同时，实现高色域的色彩显示，产品的竞争力高。

Description

OLED显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diodes，OLED)显示器件具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽、及可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED显示器件属于自发光型显示设备，通常包括分别用作阳极、与阴极的像素电极、和公共电极、以及设在像素电极与公共电极之间的有机发光层，使得在适当的电压被施加于阳极与阴极时，从有机发光层发光。有机发光层包括了设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层，其发光机理为在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子注入层和空穴注入层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
OLED器件依据其光线的出射方式的不同，分为顶发光(Top emission)OLED、及底发光(Bottom emission)OLED。顶发光OLED发出的光线由其顶部电极出射，相较于底发光OLED发出的光线由其底部的基板一侧出射，顶发光OLED具有较高的开口率及发光效率。由于OLED器件容易受水汽及氧等外界环境影响而缩短使用寿命，通常在OLED器件制作完毕后，会在其顶部的金属电极外设置封装结构。
量子点(Quantumdots，QDs)发光材料是一种应用于显示技术领域的新技术。量子点发光材料遵守量子尺寸效应，其性质随量子点的尺寸变化而变化。当受到光或电的刺激时，量子点会发出有色光线，光线的颜色与其性质有关，因此可以通过改变其尺寸对其发出的光线进行控制。量子点发光材料具有发光光谱集中、色纯度高等优点。将量子点发光材料利用于显示技术领域，可以大幅度提高传统显示器的色域，使显示器的色彩还原能力得到增强，目前已成为行业内发展的热门。
发明内容
本发明的目的在于提供一种OLED显示装置，结构简单，具有高显示色域，产品的竞争力高。
为实现上述目的，本发明首先提供一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、及设置于所述基板、及OLED层上覆盖所述OLED层的量子点封装层；
所述OLED层包括若干呈阵列排布的红光OLED、绿光OLED、及蓝光OLED；
所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述蓝光OLED上方的区域；
所述蓝光OLED顶部发出蓝光，激发量子点封装层中的量子点材料发光。
所述基板为TFT阵列基板。
所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述量子点材料均匀分布于至少一层有机物层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
所述OLED显示装置为柔性显示装置，还包括，设置于所述量子点封装层上的阻隔薄膜。
所述量子点封装层包括一层有机绝缘层；所述量子点材料均匀分布于该有机绝缘层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
所述OLED显示装置还包括，设置于所述量子点封装层上的封装胶材、及设置于所述封装胶材上的封装盖板。
所述量子点封装层中的含量子点膜单元通过喷墨打印的方式制作形成。
本发明还提供另一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、设置于所述基板、及OLED层上覆盖所述OLED层的量子点封装层、及设于所述量子点封装层上彩色滤光片；
所述OLED层包括若干呈阵列排布的白光OLED；
所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述OLED层上方的区域；
所述白光OLED由其顶部发出白光，激发量子点封装层中的量子点材料发光。
所述基板为TFT阵列基板。
所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述 量子点材料均匀分布于至少一层有机物层中，构成含量子点膜单元；
所述OLED显示装置为柔性显示装置，还包括，设置于彩色滤光片上的阻隔薄膜。
所述封装层包括一层有机绝缘层；所述量子点材料均匀分布于该有机绝缘层中，构成含量子点膜单元；
所述OLED显示装置还包括，设置于所述彩色滤光片上的封装胶材、及设于所述封装胶材上的封装盖板。
所述量子点封装层中的含量子点膜单元通过喷墨打印的方式制作形成。
本发明还提供一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、及设置于所述基板与OLED层上覆盖所述OLED层的量子点封装层；
所述OLED层包括若干呈阵列排布的红光OLED、绿光OLED、及蓝光OLED；
所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述蓝光OLED上方的区域；
所述蓝光OLED顶部发出蓝光，激发量子点封装层中的量子点材料发光；
其中，所述基板为TFT阵列基板；
其中，所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述量子点材料均匀分布于至少一层有机物层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
所述OLED显示装置为柔性显示装置，还包括，设置于所述量子点封装层上的阻隔薄膜。
本发明的有益效果：本发明提供的OLED显示装置，包括基板、设置于所述基板上的OLED层、及覆盖所述OLED层的量子点封装层，该量子点封装层中含有量子点材料，OLED层；发出的蓝光或白光激发该量子点封装层的量子点材料发光，在不增加额外结构的同时，实现高色域的色彩显示，产品的竞争力高。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的OLED显示装置的第一实施例的结构示意图；
图2为本发明的OLED显示装置的第一实施例中实现彩色显示的光路示意图；
图3为本发明的OLED显示装置的第二实施例的结构示意图；
图4为本发明的OLED显示装置的第二实施例中实现彩色显示的光路示意图；
图5为本发明的OLED显示装置的第三实施例的结构示意图；
图6为本发明的OLED显示装置的第三实施例中实现彩色显示的光路示意图；
图7为本发明的OLED显示装置的第四实施例的结构示意图；
图8为本发明的OLED显示装置的第四实施例中实现彩色显示的光路示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，为本发明的OLED显示装置的第一实施例的结构示意图，本实施例的OLED显示装置为柔性OLED显示装置，包括：基板1、设置于所述基板1上的OLED层2、设置于所述基板1、及OLED层2上覆盖所述OLED层2的量子点封装层3、及设置于所述量子点封装层3上的阻隔薄膜5。
具体地，所述OLED层2包括若干呈阵列排布的红光OLED21、绿光OLED22、及蓝光OLED23；
具体地，所述量子点封装层3中含有量子点材料40，所述量子点材料40分布于所述量子点封装层3中对应所述蓝光OLED23上方的区域。
具体地，如图2所示，所述蓝光OLED23顶部发出蓝光，激发量子点封装层3中的量子点材料40发光，从而能够有效地提升OLED显示装置的色域，提升产品的竞争力。
具体地，所述基板1为TFT阵列基板，其上的TFT分别驱动所述OLED层2的红光OLED21、绿光OLED22、及蓝光OLED23发出红、绿、蓝光。
具体地，所述量子点封装层3包括若干交替层叠的有机物层31、及无机物层32；所述量子点材料40均匀分布于至少一层有机物层31中对应所述蓝光OLED23上方的区域，从而构成含量子点膜单元；其中，所述无机 物层32的材料为氮化硅(SiNx)，通过化学气相沉积法(Chemical Vapor Deposition，CVD)形成；所述有机物层31为聚合物材料，通过旋涂(spin coating)、或喷墨打印(Ink-Jet Printing，IJP)的方式形成。
具体地，所述量子点封装层3中的含量子点膜单元通过喷墨打印的方式制作形成，其具体制作过程为：将量子点材料40掺杂于所述有机物层31的聚合物材料中，然后对应所述蓝光OLED23的上方通过喷墨打印的方式形成有机物层31上的含量子点膜单元，进而量子点材料40均匀的分布在所述机物层31中对应所述蓝光OLED23上方的区域；由于量子点材料40能够均匀且高效地分散于喷涂溶剂中，因此该制作工艺简单，同时亦不会对其他材质造成污染。
请参阅图3，为本发明的OLED显示装置的第二实施例的结构示意图，与上述第一实施例相比，该实施例的OLED显示装置用于大尺寸OLED显示装置，包括基板1、设置于所述基板1上的OLED层2、设置于所述基板1、OLED层2上覆盖所述OLED层2的量子点封装层3’、设置于所述量子点封装层3’上的封装胶材6、及设置于所述封装胶材6上的封装盖板7；所述量子点封装层3’中含有量子点材料40，所述量子点材料40分布于所述量子点封装层3’中对应所述蓝光OLED23上方的区域。
具体地，该量子点封装层3’为单层结构，包括一层有机绝缘层，该有机绝缘层为有机绝缘材料，如图4所示，所述量子点材料40均匀分布于该有机绝缘层中对应对应所述蓝光OLED23上方的区域，从而构成含量子点膜单元。
进一步地，所述量子点封装层3’中的含量子点膜单元通过喷墨打印的方式制作形成。其余均与第一实施例相同，在此不再进行赘述。
请参阅图5，为本发明的OLED显示装置的第三实施例的结构示意图，本实施例的OLED显示装置为柔性OLED显示装置且为白光OLED显示装置，所述OLED显示装置具体包括：基板1、设置于所述基板1上的OLED层2’、设置于所述基板1、及OLED层2’上覆盖所述OLED层2’的量子点封装层3”、设于所述量子点封装层3”上彩色滤光片4、及设置于彩色滤光片4上的阻隔薄膜5。
具体地，所述OLED层2’包括若干呈阵列排布的白光OLED21’。
具体地，所述量子点封装层3”中含有量子点材料40，所述量子点材料40分布于所述量子点封装层3”中对应所述OLED层2’上方的区域。
具体地，所述彩色滤光片4包括交替排列的红、绿、蓝色光阻单元41、42、43。
具体地，如图6所示，所述白光OLED21’由其顶部发出白光，激发量子点封装层3”中的量子点材料40发光，该激发光再经过彩色滤光片4的红、绿、蓝色光阻单元41、42、43，而分别发出红、绿、蓝色光，进而实现彩色显示，并同时能够有效地提升OLED显示装置的色域，提升产品的竞争力。
具体地，所述基板1为TFT阵列基板，其上的TFT驱动所述OLED层2’的白光OLED21’发出白光。
具体地，所述量子点封装层3”包括若干交替层叠的有机物层31、及无机物层32；所述量子点材料40均匀分布于至少一层有机物层31中，从而构成含量子点膜单元；其中，所述无机物层32的材料为氮化硅，通过化学气相沉积法形成；所述有机物层31为聚合物材料，通过旋涂、或喷墨打印的方式形成。
具体地，所述量子点封装层3”中的含量子点膜单元通过喷墨打印的方式制作形成，其具体制作过程为：将量子点材料40掺杂于所述有机物层31的聚合物材料中，然后通过喷墨打印的方式形成该有机物层31中的含量子点膜单元；由于量子点材料40能够均匀且高效地分散于喷涂溶剂中，因此该制作工艺简单，同时亦不会对其他材质造成污染。
请参阅图7，为本发明的OLED显示装置的第四实施例的结构示意图，与上述第三实施例相比，该实施例的OLED显示装置用于大尺寸OLED显示装置，包括基板1、设置于所述基板1上的OLED层2’、设置于所述基板1、及OLED层2’上覆盖所述OLED层2’的量子点封装层3”’、设于所述量子点封装层3”’上彩色滤光片4、设置于所述彩色滤光片4上的封装胶材6、及设置于所述封装胶材6上的封装盖板7。所述量子点封装层3”’中含有量子点材料40，所述量子点材料40分布于所述量子点封装层3”’中对应所述OLED层2’上方的区域。
具体地，该量子点封装层3”’为单层结构，包括一层有机绝缘层，该有机绝缘层为有机绝缘材料，如图8所示，所述量子点材料40均匀分布于该有机绝缘层中，从而构成含量子点膜单元。
进一步地，所述量子点封装层3”’中的含量子点膜单元通过喷墨打印的方式制作形成。其余均与第三实施例相同，在此不再进行赘述。
综上所述，本发明OLED显示装置，包括基板、设置于所述基板上的OLED层、及覆盖所述OLED层的量子点封装层，该量子点封装层中含有量子点材料，OLED层发出的蓝光或白光激发该量子点封装层的量子点材料发光，在不增加额外结构的同时，实现高色域的色彩显示，产品的竞争 力高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (12)

  1. 一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、及设置于所述基板与OLED层上覆盖所述OLED层的量子点封装层；
    所述OLED层包括若干呈阵列排布的红光OLED、绿光OLED、及蓝光OLED；
    所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述蓝光OLED上方的区域；
    所述蓝光OLED顶部发出蓝光，激发量子点封装层中的量子点材料发光。
  2. 如权利要求1所述的OLED显示装置，其中，所述基板为TFT阵列基板。
  3. 如权利要求1所述的OLED显示装置，其中，所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述量子点材料均匀分布于至少一层有机物层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
    所述OLED显示装置为柔性显示装置，还包括，设置于所述量子点封装层上的阻隔薄膜。
  4. 如权利要求1所述的OLED显示装置，其中，所述量子点封装层包括一层有机绝缘层；所述量子点材料均匀分布于该有机绝缘层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
    所述OLED显示装置还包括，设置于所述量子点封装层上的封装胶材、及设置于所述封装胶材上的封装盖板。
  5. 如权利要求3所述的OLED显示装置，其中，所述量子点封装层中的含量子点膜单元通过喷墨打印的方式制作形成。
  6. 一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、设置于所述基板与OLED层上覆盖所述OLED层的量子点封装层、及设于所述量子点封装层上彩色滤光片；
    所述OLED层包括若干呈阵列排布的白光OLED；
    所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述OLED层上方的区域；
    所述白光OLED由其顶部发出白光，激发量子点封装层中的量子点材料发光。
  7. 如权利要求6所述的OLED显示装置，其中，所述基板为TFT阵 列基板。
  8. 如权利要求6所述的OLED显示装置，其中，所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述量子点材料均匀分布于至少一层有机物层中，构成含量子点膜单元；
    所述OLED显示装置为柔性显示装置，还包括，设置于彩色滤光片上的阻隔薄膜。
  9. 如权利要求6所述的OLED显示装置，其中，所述封装层包括一层有机绝缘层；所述量子点材料均匀分布于该有机绝缘层中，构成含量子点膜单元；
    所述OLED显示装置还包括，设置于所述彩色滤光片上的封装胶材、及设于所述封装胶材上的封装盖板。
  10. 如权利要求9所述的OLED显示装置，其中，所述量子点封装层中的含量子点膜单元通过喷墨打印的方式制作形成。
  11. 一种OLED显示装置，包括：基板、设置于所述基板上的OLED层、及设置于所述基板与OLED层上覆盖所述OLED层的量子点封装层；
    所述OLED层包括若干呈阵列排布的红光OLED、绿光OLED、及蓝光OLED；
    所述量子点封装层中含有量子点材料，所述量子点材料分布于所述量子点封装层中对应所述蓝光OLED上方的区域；
    所述蓝光OLED顶部发出蓝光，激发量子点封装层中的量子点材料发光；
    其中，所述基板为TFT阵列基板；
    其中，所述量子点封装层包括若干交替层叠的有机物层、及无机物层；所述量子点材料均匀分布于至少一层有机物层中对应所述蓝光OLED上方的区域，构成含量子点膜单元；
    所述OLED显示装置为柔性显示装置，还包括，设置于所述量子点封装层上的阻隔薄膜。
  12. 如权利要求11所述的OLED显示装置，其中，所述量子点封装层中的含量子点膜单元通过喷墨打印的方式制作形成。
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