WO2018113005A1 - Oled封装方法与oled封装结构 - Google Patents

Oled封装方法与oled封装结构 Download PDF

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Publication number
WO2018113005A1
WO2018113005A1 PCT/CN2016/112531 CN2016112531W WO2018113005A1 WO 2018113005 A1 WO2018113005 A1 WO 2018113005A1 CN 2016112531 W CN2016112531 W CN 2016112531W WO 2018113005 A1 WO2018113005 A1 WO 2018113005A1
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layer
diamond
silicon
organic buffer
covering
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PCT/CN2016/112531
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English (en)
French (fr)
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金江江
徐湘伦
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武汉华星光电技术有限公司
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Priority to US15/505,119 priority Critical patent/US10249846B2/en
Publication of WO2018113005A1 publication Critical patent/WO2018113005A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED packaging method and an OLED package structure.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED device generally includes a substrate, an anode disposed on the substrate, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, and a light-emitting layer disposed on the hole transport layer.
  • the principle of illumination of OLED devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED device generally uses an indium tin oxide (ITO) electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • ITO indium tin oxide
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • OLED devices are generally very sensitive to moisture. Once exposed to moisture, the cathode can be oxidized, and the organic layer (hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer) can be degraded. Reduce the brightness and lifetime of OLED devices. Therefore, the packaging material of the OLED device generally needs a strong ability to block external water oxygen to effectively improve the brightness and service life of the OLED device.
  • Diamond-Like Carbon is a material with good barrier properties of water and oxygen, and has a good application prospect in the field of OLED packaging.
  • WVTR water vapor transmission rate
  • refractive index refractive index
  • light transmittance of diamond-like diamonds in an article published in Thin Solid Films 482 (2005) 201–206 shows that diamond-like water vapor transmission The rate decreases with increasing thickness. When the thickness of the diamond-like diamond is about 70 nm, the water vapor transmission rate is no longer significantly reduced.
  • the introduction of a small amount of silicon (Si) in diamond-like carbon can increase its ability to block water oxygen, but it will reduce its density, transmittance and refractive index. Therefore, how to effectively solve the contradiction between the diamond-like barrier of external water oxygen and its density, transmittance and refractive index is directly related to the practical application of diamond-like.
  • the object of the present invention is to provide an OLED packaging method, which can not only greatly improve the service life of the OLED device, but also ensure high OLED output efficiency.
  • Another object of the present invention is to provide an OLED package structure, which can not only greatly improve the service life of the OLED device, but also ensure high light output efficiency of the OLED device.
  • the present invention provides an OLED packaging method, including the following steps:
  • Step 1 providing an OLED device, forming a first barrier layer on the OLED device, the first barrier layer covering the OLED device over the entire surface;
  • Step 2 forming a first silicon doped diamond-like layer on the first barrier layer, the first silicon doped diamond-like layer covering the first barrier layer;
  • Step 3 forming a diamond-like scattering layer on the first silicon doped diamond-like layer
  • Step 4 forming a first organic buffer layer on the first silicon doped diamond-like layer and the diamond-like scattering layer, the first organic buffer layer covering the first silicon doped diamond-like layer and diamond-like layer Scattering layer
  • Step 5 forming a second barrier layer on the first organic buffer layer, the second barrier layer covering the first organic buffer layer over the entire surface.
  • the first silicon doped diamond-like layer is formed by pulsed laser deposition, sputtering, or plasma enhanced chemical vapor deposition;
  • the material of the first silicon doped diamond-like layer is doped silicon-like diamond-like carbon, wherein the content of silicon element is less than 10 wt%; and the light transmittance of the first silicon doped diamond-like layer is greater than or equal to 95 %; the first silicon-doped diamond-like layer has a thickness of 10 nm to 100 nm.
  • the diamond-like scattering layer is formed by pulsed laser deposition, sputtering, or plasma enhanced chemical vapor deposition;
  • the material of the diamond-like scattering layer is undoped diamond-like; the diamond-like scattering layer comprises a plurality of strips of diamond-like carbon film layers arranged at intervals, or comprises a plurality of circles arranged in an array a diamond-like carbon film layer; the diamond-like scattering layer has a thickness of 10 nm to 1 ⁇ m.
  • the first barrier layer is formed by plasma enhanced chemical vapor deposition, atomic layer deposition, pulsed laser deposition, or sputtering;
  • the material of the first barrier layer comprises one or more of zirconium aluminate, graphene, aluminum oxide, zirconium dioxide, zinc peroxide, silicon nitride, silicon carbonitride, silicon oxide, and titanium dioxide;
  • the first barrier layer has a thickness of 0.5 ⁇ m to 1 ⁇ m;
  • the first organic buffer layer is formed by inkjet printing, plasma enhanced chemical vapor deposition, or slit coating; the material of the first organic buffer layer includes an acrylic resin and a polystyrene compound. And one or more of the polyester compounds; the first organic buffer layer has a thickness of from 1 ⁇ m to 10 ⁇ m.
  • the OLED packaging method of the present invention further includes: step 6, forming a second silicon-doped diamond-like layer covering the second barrier layer over the second barrier layer, and doping the diamond in the second silicon A second organic buffer layer covering the second silicon doped diamond-like layer is formed on the layer, and a third barrier layer covering the second organic buffer layer is formed on the second organic buffer layer.
  • the present invention also provides an OLED package structure, comprising an OLED device, a first barrier layer disposed on the OLED device and covering the OLED device over the entire surface, disposed on the first barrier layer and covering the first barrier layer over the entire surface a first silicon doped diamond-like layer, a diamond-like scattering layer disposed on the first silicon-doped diamond-like layer, disposed on the first silicon-doped diamond-like layer and the diamond-like scattering layer, and covering the entire surface a first organic buffer layer of a silicon-doped diamond-like layer and a diamond-like scattering layer, a second barrier layer disposed on the first organic buffer layer and covering the first organic buffer layer over the entire surface.
  • the material of the first silicon doped diamond-like layer is doped silicon-like diamond-like carbon, wherein the content of silicon element is less than 10 wt%; and the light transmittance of the first silicon doped diamond-like layer is greater than or equal to 95 %; the first silicon-doped diamond-like layer has a thickness of 10 nm to 100 nm.
  • the material of the diamond-like scattering layer is undoped diamond-like layer; the diamond-like scattering layer comprises a plurality of strips of diamond-like carbon film layers arranged at intervals, or comprises a plurality of circular diamond-like carbon layers arranged in an array
  • the diamond-like scattering layer has a thickness of 10 nm to 1 ⁇ m.
  • the material of the first barrier layer comprises one or more of zirconium aluminate, graphene, aluminum oxide, zirconium dioxide, zinc peroxide, silicon nitride, silicon carbonitride, silicon oxide, and titanium dioxide;
  • the first barrier layer has a thickness of 0.5 ⁇ m to 1 ⁇ m;
  • the material of the first organic buffer layer includes one or more of an acrylic resin, a polystyrene compound, and a polyester compound; and the first organic buffer layer has a thickness of 1 ⁇ m to 10 ⁇ m.
  • the OLED package structure of the present invention further includes: a second silicon doped diamond-like layer disposed on the second barrier layer and covering the second barrier layer over the entire surface, and disposed on the second silicon doped diamond-like layer a second organic buffer layer covering the second silicon doped diamond-like layer on the entire surface and a third barrier layer disposed on the second organic buffer layer and covering the second organic buffer layer over the entire surface.
  • the present invention also provides an OLED package structure, comprising an OLED device, a first barrier layer disposed on the OLED device and covering the OLED device over the entire surface, disposed on the first barrier layer and covering the first barrier layer over the entire surface a first silicon-doped diamond-like layer, a diamond-like scattering layer disposed on the first silicon-doped diamond-like layer, disposed on the first silicon-doped diamond-like layer and the diamond-like scattering layer, and covering the entire surface a first organic buffer layer of the first silicon-doped diamond-like layer and the diamond scattering layer, a second barrier layer disposed on the first organic buffer layer and covering the first organic buffer layer over the entire surface;
  • the material of the first silicon-doped diamond-like layer is a diamond-like doped silicon, wherein the content of the silicon element is less than 10% by weight; and the light transmittance of the first silicon-doped diamond-like layer is greater than or Equal to 95%; the first silicon doped diamond-like layer has a thickness of 10 nm to 100 nm;
  • the material of the diamond-like scattering layer is undoped diamond-like;
  • the diamond-like scattering layer comprises a plurality of strips of diamond-like carbon film layers arranged at intervals, or comprises a plurality of circular diamond-like diamonds arranged in an array a film layer;
  • the diamond-like scattering layer has a thickness of 10 nm to 1 ⁇ m.
  • the present invention provides an OLED packaging method in which a silicon-doped diamond-like layer and a diamond-like scattering layer are simultaneously disposed in a package structure of an OLED, and a silicon-doped diamond-like layer is used to block external water and oxygen.
  • the effect of using the diamond-like scattering layer to improve the light transmittance can not only greatly improve the service life of the OLED device, but also ensure the high light output efficiency of the OLED device.
  • the invention provides an OLED package structure, which simultaneously uses a silicon-doped diamond-like layer and a diamond-like scattering layer, and uses a silicon-doped diamond-like layer to block the effect of external water and oxygen, and uses a diamond-like scattering layer to improve light.
  • the effect of the transmittance can not only greatly improve the service life of the OLED device, but also ensure the high light output efficiency of the OLED device.
  • step 1 of the OLED packaging method of the present invention is a schematic diagram of step 1 of the OLED packaging method of the present invention.
  • step 2 of the OLED packaging method of the present invention is a schematic diagram of step 2 of the OLED packaging method of the present invention.
  • step 3 of the OLED packaging method of the present invention is a schematic diagram of step 3 of the OLED packaging method of the present invention.
  • FIG. 5 is a top plan view of a first embodiment of a diamond-like scattering layer produced in step 3 of the OLED packaging method of the present invention.
  • FIG. 6 is a top plan view showing a second embodiment of the diamond-like scattering layer produced in step 3 of the OLED packaging method of the present invention.
  • step 4 of the OLED packaging method of the present invention is a schematic diagram of step 4 of the OLED packaging method of the present invention.
  • FIG. 8 is a schematic cross-sectional view showing a step 5 of the OLED packaging method of the present invention and a first embodiment of the OLED package structure of the present invention
  • FIG. 9 is a schematic cross-sectional view showing a step 6 of the OLED packaging method of the present invention and a second embodiment of the OLED package structure of the present invention.
  • the present invention provides an OLED packaging method, including the following steps:
  • Step 1 as shown in FIG. 2, an OLED device 10 is provided.
  • a first barrier layer 20 is formed on the OLED device 10, and the first barrier layer 20 covers the OLED device 10 over its entire surface.
  • the first barrier layer 20 is formed in a manner of a sputter.
  • the material of the first barrier layer 20 includes zirconium aluminate (ZrAl x O y ), graphene, aluminum oxide (Al 2 O 3 ), zirconium dioxide (ZrO 2 ), and zinc peroxide (ZnO 2 ).
  • ZrAl x O y zirconium aluminate
  • SiN x silicon carbonitride
  • SiO x silicon oxide
  • TiO 2 titanium dioxide
  • the first barrier layer 20 has a thickness of 0.5 ⁇ m to 1 ⁇ m.
  • the first barrier layer 20 functions to block the erosion of the OLED device 10 by water and oxygen.
  • Step 2 as shown in FIG. 3, forming a first silicon doped diamond-like carbon (DLC) layer 30 on the first barrier layer 20, the first silicon doped diamond-like layer 30 covering the first surface Barrier layer 20.
  • DLC diamond-like carbon
  • the first silicon-doped diamond-like layer 30 is formed by pulsed laser deposition (PLD), sputtering (Pputter), or plasma enhanced chemical vapor deposition (PECVD).
  • PLD pulsed laser deposition
  • Pputter sputtering
  • PECVD plasma enhanced chemical vapor deposition
  • the material of the first silicon doped diamond-like layer 30 is a silicon-like element The stone wherein the content of the silicon element is less than 10% by weight; the light transmittance of the first silicon-doped diamond-like layer 30 is greater than or equal to 95%.
  • the first silicon doped diamond-like layer 30 has a thickness of 10 nm to 100 nm.
  • the first silicon doped diamond-like layer 30 is used to fill surface defects of the first barrier layer 20 and further enhance the ability of the OLED package structure to block external water oxygen.
  • Step 3 As shown in FIG. 4, a diamond-like scattering layer 40 is formed on the first silicon doped diamond-like layer 30.
  • the diamond-like scattering layer 40 is formed by pulsed laser deposition (PLD), sputtering (Sputter), or plasma enhanced chemical vapor deposition (PECVD).
  • PLD pulsed laser deposition
  • Sputter sputtering
  • PECVD plasma enhanced chemical vapor deposition
  • the material of the diamond-like scattering layer 40 is undoped diamond-like carbon.
  • the diamond-like scattering layer 40 includes a plurality of strip-shaped diamond-like film layers 41 disposed at intervals, or includes a plurality of circular diamond-like carbon film layers 42 arranged in an array.
  • a plurality of strip-shaped diamond-like film layers 41 disposed at intervals or a plurality of circular diamond-like carbon film layers 42 arranged in an array may be formed by a metal mask or an organic photolithography process.
  • the diamond-like scattering layer 40 can promote scattering and diffraction of light, thereby improving light transmittance.
  • the diamond-like scattering layer 40 has a thickness of 10 nm to 1 ⁇ m.
  • the material of the diamond-like scattering layer 40 has a refractive index greater than or equal to 2.0.
  • Step 4 as shown in FIG. 7, a first organic buffer layer 50 is formed on the first silicon-doped diamond-like layer 30 and the diamond-like scattering layer 40, and the first organic buffer layer 50 covers the entire surface.
  • the first organic buffer layer 50 is formed by inkjet printing (IJP), plasma enhanced chemical vapor deposition (PECVD), or slot coating.
  • IJP inkjet printing
  • PECVD plasma enhanced chemical vapor deposition
  • slot coating slot coating
  • the first organic buffer layer 50 has a thickness of 1 ⁇ m to 10 ⁇ m.
  • the material of the first organic buffer layer 50 includes one or more of an acrylic resin, a polystyrene compound, and a polyester compound.
  • the first organic buffer layer 50 mainly serves to alleviate stress and flattening of the OLED display device during bending and folding.
  • Step 5 As shown in FIG. 8, a second barrier layer 60 is formed on the first organic buffer layer 50, and the second barrier layer 60 covers the first organic buffer layer 50 over the entire surface.
  • the method for preparing the second barrier layer 60 and the first resistor The spacer 20 is the same, and the material and thickness of the second barrier layer 60 are the same as those of the first barrier layer 20.
  • the OLED packaging method of the present invention may further include:
  • Step 6 as shown in FIG. 9, a second silicon doped diamond-like layer 70 covering the second barrier layer 60 over the entire surface of the second barrier layer 60 is formed on the second silicon doped diamond-like layer 70.
  • the second organic buffer layer 80 covering the second silicon doped diamond-like layer 70 is entirely covered, and the third barrier layer 90 covering the second organic buffer layer 80 is formed on the second organic buffer layer 80.
  • the second silicon-doped diamond-like layer 70 is prepared in the same manner as the first silicon-doped diamond-like layer 30, and the material and thickness of the second silicon-doped diamond-like layer 70 are the same as the first A silicon doped diamond-like layer 30 is the same.
  • the second organic buffer layer 80 is prepared in the same manner as the first organic buffer layer 50, and the second organic buffer layer 80 has the same material and thickness as the first organic buffer layer 50.
  • the third barrier layer 90 is prepared in the same manner as the second barrier layer 60.
  • the third barrier layer 90 has the same material and thickness as the second barrier layer 60.
  • the silicon-doped diamond-like layer and the diamond-like scattering layer are simultaneously disposed in the package structure of the OLED, and the silicon-doped diamond-like layer is used to block the effect of external water and oxygen, and the diamond-like scattering layer is used to improve
  • the effect of light transmittance not only greatly improves the service life of OLED devices, but also ensures high light output efficiency of OLED devices.
  • the present invention further provides an OLED package structure, including an OLED device 10, a first barrier layer 20 disposed on the OLED device 10 and covering the OLED device 10 over the entire surface, and disposed on the OLED package.
  • a first silicon doped diamond-like layer 30 covering the first barrier layer 20 on the first barrier layer 20 and a diamond-like scattering layer 40 disposed on the first silicon doped diamond-like layer 30,
  • a first organic buffer layer 50 on the silicon-doped diamond-like layer 30 and the diamond-like scattering layer 40 and covering the first silicon-doped diamond-like layer 30 and the diamond-like scattering layer 40 over the entire surface is disposed in the first organic buffer layer
  • the second barrier layer 60 of the first organic buffer layer 50 is covered on the layer 50 and over the entire surface.
  • the material of the first barrier layer 20 includes zirconium aluminate (ZrAl x O y ), graphene, aluminum oxide (Al 2 O 3 ), zirconium dioxide (ZrO 2 ), and zinc peroxide (ZnO 2 ).
  • ZrAl x O y zirconium aluminate
  • SiN x silicon carbonitride
  • SiO x silicon oxide
  • TiO 2 titanium dioxide
  • the first barrier layer 20 has a thickness of 0.5 ⁇ m to 1 ⁇ m.
  • the first silicon doped diamond-like layer 30 has a thickness of 10 nm to 100 nm.
  • the first silicon doped diamond-like layer 30 is a diamond-like doped silicon
  • the content of the medium silicon element is less than 10% by weight, and the light transmittance of the first silicon-doped diamond-like layer 30 is greater than or equal to 95%.
  • the material of the diamond-like scattering layer 40 is undoped diamond-like carbon.
  • the diamond-like scattering layer 40 includes a plurality of strip-shaped diamond-like film layers 41 disposed at intervals, or includes a plurality of circular diamond-like carbon film layers 42 arranged in an array.
  • the diamond-like scattering layer 40 has a thickness of 10 nm to 1 ⁇ m.
  • the material of the diamond-like scattering layer 40 has a refractive index greater than or equal to 2.0.
  • the material of the first organic buffer layer 50 includes one or more of an acrylic resin, a polystyrene compound, and a polyester compound.
  • the first organic buffer layer 50 has a thickness of 1 ⁇ m to 10 ⁇ m.
  • the material and thickness of the second barrier layer 60 are the same as those of the first barrier layer 20.
  • the OLED package structure of the present invention may further include: a second silicon doped diamond-like layer 70 disposed on the second barrier layer 60 and covering the second barrier layer 60 over the entire surface, a second organic buffer layer 80 on the second silicon doped diamond-like layer 70 and covering the second silicon doped diamond-like layer 70 over the entire surface, disposed on the second organic buffer layer 80 and covering the second surface The third barrier layer 90 of the organic buffer layer 80.
  • the material and thickness of the second silicon doped diamond-like layer 70 are the same as those of the first silicon doped diamond-like layer 30.
  • the material and thickness of the second organic buffer layer 80 are the same as those of the first organic buffer layer 50.
  • the material and thickness of the third barrier layer 90 are the same as those of the second barrier layer 60.
  • the silicon-doped diamond-like layer and the diamond-like scattering layer are simultaneously disposed, and the silicon-doped diamond-like layer is used to block the effect of external water oxygen, and the diamond-like scattering layer is used to improve the light transmittance. Not only can the lifetime of the OLED device be greatly improved, but also the OLED device can have a high light output efficiency.
  • the present invention provides an OLED packaging method and an OLED package structure.
  • the OLED packaging method of the present invention uses a silicon doped diamond-like layer to block the effect of external water oxygen by simultaneously providing a silicon-doped diamond-like layer and a diamond-like scattering layer in the package structure of the OLED, using a diamond-like scattering layer.
  • a silicon doped diamond-like layer to block the effect of external water oxygen by simultaneously providing a silicon-doped diamond-like layer and a diamond-like scattering layer in the package structure of the OLED, using a diamond-like scattering layer.
  • the OLED package structure of the present invention uses a silicon-doped diamond-like layer to block the effect of external water oxygen by simultaneously providing a silicon-doped diamond-like layer and a diamond-like scattering layer, and uses a diamond-like scattering layer to improve light transmittance.
  • the effect can not only greatly improve the service life of the OLED device, but also ensure the high light output efficiency of the OLED device.

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Abstract

一种OLED封装方法与OLED封装结构，该OLED封装方法，通过在OLED的封装结构中同时设置硅掺杂类金刚石层（30）与类金刚石散射层（40）。利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够提高OLED器件的使用寿命，而且能够保证OLED器件的光线输出效率。

Description

OLED封装方法与OLED封装结构 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED封装方法与OLED封装结构。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED器件通常采用氧化铟锡(ITO)电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
OLED器件通常对水分非常敏感，一旦暴露在湿气中，其阴极可以被氧化，有机层(空穴注入层、空穴传输层、发光层、电子传输层、电子注入层)可以被降解，从而降低OLED器件的亮度和使用寿命。因此，OLED器件的封装材料通常需要较强的阻隔外界水氧的能力，以有效提高OLED器件的亮度和使用寿命。
类金刚石(Diamond-Like Carbon，DLC)是一种具有较好的阻隔水氧特性的材料，在OLED的封装领域具有良好的应用前景。早在2005年，Abbas 就在Thin Solid Films 482(2005)201–206发表的文章中对类金刚石的水汽透过率(WVTR)、折射率、光透过率进行了系统的研究，结果显示，类金刚石的水汽透过率随厚度的增加而减小，当类金刚石的厚度为70nm左右时，其水汽透过率不再会有明显的降低。另外一方面，在类金刚石中引入少量硅(Si)元素时可以提高其阻隔水氧的能力，但是却会降低其密度、透过率和折射率。因此，如何有效的解决类金刚石的阻隔外界水氧能力与其密度、透过率、折射率之间的矛盾，直接关系到类金刚石的现实应用。
发明内容
本发明的目的在于提供一种OLED封装方法，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
本发明的目的还在于提供一种OLED封装结构，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
为实现上述目的，本发明提供一种OLED封装方法，包括如下步骤：
步骤1、提供一OLED器件，在所述OLED器件上形成第一阻隔层，所述第一阻隔层整面覆盖所述OLED器件；
步骤2、在所述第一阻隔层上形成第一硅掺杂类金刚石层，所述第一硅掺杂类金刚石层整面覆盖所述第一阻隔层；
步骤3、在所述第一硅掺杂类金刚石层上形成类金刚石散射层；
步骤4、在所述第一硅掺杂类金刚石层及类金刚石散射层上形成第一有机缓冲层，所述第一有机缓冲层整面覆盖所述第一硅掺杂类金刚石层及类金刚石散射层；
步骤5、在所述第一有机缓冲层上形成第二阻隔层，所述第二阻隔层整面覆盖所述第一有机缓冲层。
所述步骤2中，采用脉冲激光沉积、溅射、或者等离子体增强化学气相沉积的方式形成第一硅掺杂类金刚石层；
所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm。
所述步骤3中，采用脉冲激光沉积、溅射、或者等离子体增强化学气相沉积的方式形成类金刚石散射层；
所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆 形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
所述步骤1中，采用等离子体增强化学气相沉积、原子层沉积、脉冲激光沉积、或者溅射的方式形成第一阻隔层；
所述第一阻隔层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、碳氮化硅、氧化硅、及二氧化钛中的一种或多种；所述第一阻隔层的厚度为0.5μm-1μm；
所述步骤4中，利用喷墨打印、等离子体增强化学气相沉积、或者狭缝涂布的方式形成第一有机缓冲层；所述第一有机缓冲层的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种；所述第一有机缓冲层的厚度为1μm-10μm。
可选的，本发明的OLED封装方法还包括：步骤6、在第二阻隔层上形成整面覆盖所述第二阻隔层的第二硅掺杂类金刚石层，在第二硅掺杂类金刚石层上形成整面覆盖所述第二硅掺杂类金刚石层的第二有机缓冲层，在第二有机缓冲层上形成整面覆盖所述第二有机缓冲层的第三阻隔层。
本发明还提供一种OLED封装结构，包括OLED器件、设于OLED器件上且整面覆盖所述OLED器件的第一阻隔层、设于第一阻隔层上且整面覆盖所述第一阻隔层的第一硅掺杂类金刚石层、设于第一硅掺杂类金刚石层上的类金刚石散射层、设于第一硅掺杂类金刚石层及类金刚石散射层上且整面覆盖所述第一硅掺杂类金刚石层及类金刚石散射层的第一有机缓冲层、设于第一有机缓冲层上且整面覆盖所述第一有机缓冲层的第二阻隔层。
所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm。
所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
所述第一阻隔层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、碳氮化硅、氧化硅、及二氧化钛中的一种或多种；所述第一阻隔层的厚度为0.5μm-1μm；
所述第一有机缓冲层的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种；所述第一有机缓冲层的厚度为1μm-10μm。
可选的，本发明的OLED封装结构还包括：设于第二阻隔层上且整面覆盖所述第二阻隔层的第二硅掺杂类金刚石层、设于第二硅掺杂类金刚石 层上且整面覆盖所述第二硅掺杂类金刚石层的第二有机缓冲层、设于第二有机缓冲层上且整面覆盖所述第二有机缓冲层的第三阻隔层。
本发明还提供一种OLED封装结构，包括OLED器件、设于OLED器件上且整面覆盖所述OLED器件的第一阻隔层、设于第一阻隔层上且整面覆盖所述第一阻隔层的第一硅掺杂类金刚石层、设于第一硅掺杂类金刚石层上的类金刚石散射层、设于第一硅掺杂类金刚石层及类金刚石散射层上且整面覆盖所述类第一硅掺杂类金刚石层及金刚石散射层的第一有机缓冲层、设于第一有机缓冲层上且整面覆盖所述第一有机缓冲层的第二阻隔层；
其中，所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm；
其中，所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
本发明的有益效果：本发明提供的一种OLED封装方法，通过在OLED的封装结构中同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。本发明提供的一种OLED封装结构，通过同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED封装方法的流程图；
图2为本发明的OLED封装方法的步骤1的示意图；
图3为本发明的OLED封装方法的步骤2的示意图；
图4为本发明的OLED封装方法的步骤3的示意图；
图5为本发明的OLED封装方法的步骤3制作的类金刚石散射层的第一实施例的俯视示意图；
图6为本发明的OLED封装方法的步骤3制作的类金刚石散射层的第二实施例的俯视示意图；
图7为本发明的OLED封装方法的步骤4的示意图；
图8为本发明的OLED封装方法的步骤5的示意图暨本发明的OLED封装结构的第一实施例的剖视示意图；
图9为本发明的OLED封装方法的步骤6的示意图暨本发明的OLED封装结构的第二实施例的剖视示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种OLED封装方法，包括如下步骤：
步骤1、如图2所示，提供一OLED器件10，在所述OLED器件10上形成第一阻隔层20，所述第一阻隔层20整面覆盖所述OLED器件10。
具体的，所述步骤1中，采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)、原子层沉积(Atomic Layer Deposition，ALD)、脉冲激光沉积(Pulsed Laser Deposition，PLD)、或者溅射(Sputter)的方式形成第一阻隔层20。
具体的，所述第一阻隔层20的材料包括锆铝酸盐(ZrAlxOy)、石墨烯、氧化铝(Al2O3)、二氧化锆(ZrO2)、过氧化锌(ZnO2)、氮化硅(SiNx)、碳氮化硅(SiCN)、氧化硅(SiOx)、及二氧化钛(TiO2)中的一种或多种。
具体的，所述第一阻隔层20的厚度为0.5μm-1μm。
具体的，所述第一阻隔层20的作用在于阻隔水氧对OLED器件10的侵蚀。
步骤2、如图3所示，在所述第一阻隔层20上形成第一硅掺杂类金刚石(DLC)层30，所述第一硅掺杂类金刚石层30整面覆盖所述第一阻隔层20。
具体的，所述步骤2中，采用脉冲激光沉积(PLD)、溅射(Sputter)、或者等离子体增强化学气相沉积(PECVD)的方式形成第一硅掺杂类金刚石层30。
具体的，所述第一硅掺杂类金刚石层30的材料为掺杂硅元素的类金刚 石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层30的光线透过率大于或者等于95％。
具体的，所述第一硅掺杂类金刚石层30的厚度为10nm-100nm。
具体的，所述第一硅掺杂类金刚石层30用于填充所述第一阻隔层20的表面缺陷，并进一步增强OLED封装结构阻隔外界水氧的能力。
步骤3、如图4所示，在所述第一硅掺杂类金刚石层30上形成类金刚石散射层40。
具体的，所述步骤3中，采用脉冲激光沉积(PLD)、溅射(Sputter)、或者等离子体增强化学气相沉积(PECVD)的方式形成类金刚石散射层40。
具体的，所述类金刚石散射层40的材料为未掺杂的类金刚石。
具体的，如图5与图6所示，所述类金刚石散射层40包括间隔设置的多个条形类金刚石膜层41，或者包括呈阵列排布的多个圆形类金刚石膜层42。
具体的，可以利用金属掩膜板或有机光刻工艺形成间隔设置的多个条形类金刚石膜层41、或者形成呈阵列排布的多个圆形类金刚石膜层42。
具体的，所述类金刚石散射层40能够促进光线的散射与衍射，从而提高光线透过率。
具体的，所述类金刚石散射层40的厚度为10nm-1μm。
具体的，所述类金刚石散射层40的材料的折射率大于或者等于2.0。
步骤4、如图7所示，在所述第一硅掺杂类金刚石层30及类金刚石散射层40上形成第一有机缓冲层50，所述第一有机缓冲层50整面覆盖所述第一硅掺杂类金刚石层30及类金刚石散射层40。
具体的，所述步骤4中，利用喷墨打印(Ink Jet Printing，IJP)、等离子体增强化学气相沉积(PECVD)、或者狭缝涂布(slot coating)的方式形成第一有机缓冲层50。
具体的，所述第一有机缓冲层50的厚度为1μm-10μm。
具体的，所述第一有机缓冲层50的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种。
具体的，所述第一有机缓冲层50主要起到缓解OLED显示装置在弯曲、折叠时的应力以及平坦化的作用。
步骤5、如图8所示，在所述第一有机缓冲层50上形成第二阻隔层60，所述第二阻隔层60整面覆盖所述第一有机缓冲层50。
至此，完成对OLED器件10的基本封装。
具体的，所述步骤5中，所述第二阻隔层60的制备方法与所述第一阻 隔层20相同，所述第二阻隔层60的材料和厚度与所述第一阻隔层20相同。
进一步的，为进一步提高OLED封装结构的阻隔水氧的能力，本发明的OLED封装方法还可以包括：
步骤6、如图9所示，在第二阻隔层60上形成整面覆盖所述第二阻隔层60的第二硅掺杂类金刚石层70，在第二硅掺杂类金刚石层70上形成整面覆盖所述第二硅掺杂类金刚石层70的第二有机缓冲层80，在第二有机缓冲层80上形成整面覆盖所述第二有机缓冲层80的第三阻隔层90。
具体的，所述第二硅掺杂类金刚石层70的制备方法与所述第一硅掺杂类金刚石层30相同，所述第二硅掺杂类金刚石层70的材料和厚度与所述第一硅掺杂类金刚石层30相同。
具体的，所述第二有机缓冲层80的制备方法与所述第一有机缓冲层50相同，所述第二有机缓冲层80的材料和厚度与所述第一有机缓冲层50相同。
具体的，所述第三阻隔层90的制备方法与所述第二阻隔层60相同，所述第三阻隔层90的材料和厚度与所述第二阻隔层60相同。
上述OLED封装方法，通过在OLED的封装结构中同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
请参阅图8，基于上述OLED封装方法，本发明还提供一种OLED封装结构，包括OLED器件10、设于OLED器件10上且整面覆盖所述OLED器件10的第一阻隔层20、设于第一阻隔层20上且整面覆盖所述第一阻隔层20的第一硅掺杂类金刚石层30、设于第一硅掺杂类金刚石层30上的类金刚石散射层40、设于第一硅掺杂类金刚石层30及类金刚石散射层40上且整面覆盖所述第一硅掺杂类金刚石层30及类金刚石散射层40的第一有机缓冲层50、设于第一有机缓冲层50上且整面覆盖所述第一有机缓冲层50的第二阻隔层60。
具体的，所述第一阻隔层20的材料包括锆铝酸盐(ZrAlxOy)、石墨烯、氧化铝(Al2O3)、二氧化锆(ZrO2)、过氧化锌(ZnO2)、氮化硅(SiNx)、碳氮化硅(SiCN)、氧化硅(SiOx)、及二氧化钛(TiO2)中的一种或多种。
具体的，所述第一阻隔层20的厚度为0.5μm-1μm。
具体的，所述第一硅掺杂类金刚石层30的厚度为10nm-100nm。
具体的，所述第一硅掺杂类金刚石层30为掺杂硅元素的类金刚石，其 中硅元素的含量小于10wt％，所述第一硅掺杂类金刚石层30的光线透过率大于或者等于95％。
具体的，所述类金刚石散射层40的材料为未掺杂的类金刚石。
具体的，如图5与图6所示，所述类金刚石散射层40包括间隔设置的多个条形类金刚石膜层41，或者包括呈阵列排布的多个圆形类金刚石膜层42。具体的，所述类金刚石散射层40的厚度为10nm-1μm。
具体的，所述类金刚石散射层40的材料的折射率大于或者等于2.0。
具体的，所述第一有机缓冲层50的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种。
具体的，所述第一有机缓冲层50的厚度为1μm-10μm。
具体的，所述第二阻隔层60的材料和厚度与所述第一阻隔层20相同。
进一步的，请参阅图9，本发明的OLED封装结构还可以包括：设于第二阻隔层60上且整面覆盖所述第二阻隔层60的第二硅掺杂类金刚石层70、设于第二硅掺杂类金刚石层70上且整面覆盖所述第二硅掺杂类金刚石层70的第二有机缓冲层80、设于第二有机缓冲层80上且整面覆盖所述第二有机缓冲层80的第三阻隔层90。
具体的，所述第二硅掺杂类金刚石层70的材料和厚度与所述第一硅掺杂类金刚石层30相同。
具体的，所述第二有机缓冲层80的材料和厚度与所述第一有机缓冲层50相同。
具体的，所述第三阻隔层90的材料和厚度与所述第二阻隔层60相同。
上述OLED封装结构，通过同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
综上所述，本发明提供一种OLED封装方法与OLED封装结构。本发明的OLED封装方法，通过在OLED的封装结构中同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。本发明的OLED封装结构，通过同时设置硅掺杂类金刚石层与类金刚石散射层，利用硅掺杂类金刚石层起到阻隔外界水氧的效果，利用类金刚石散射层起到提高光线透过率的效果，不仅能够大幅提高OLED器件的使用寿命，而且能够保证OLED器件具有较高的光线输出效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种OLED封装方法，包括如下步骤：
    步骤1、提供一OLED器件，在所述OLED器件上形成第一阻隔层，所述第一阻隔层整面覆盖所述OLED器件；
    步骤2、在所述第一阻隔层上形成第一硅掺杂类金刚石层，所述第一硅掺杂类金刚石层整面覆盖所述第一阻隔层；
    步骤3、在所述第一硅掺杂类金刚石层上形成类金刚石散射层；
    步骤4、在所述第一硅掺杂类金刚石层及类金刚石散射层上形成第一有机缓冲层，所述第一有机缓冲层整面覆盖所述第一硅掺杂类金刚石层及类金刚石散射层；
    步骤5、在所述第一有机缓冲层上形成第二阻隔层，所述第二阻隔层整面覆盖所述第一有机缓冲层。
  2. 如权利要求1所述的OLED封装方法，其中，所述步骤2中，采用脉冲激光沉积、溅射、或者等离子体增强化学气相沉积的方式形成第一硅掺杂类金刚石层；
    所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm。
  3. 如权利要求1所述的OLED封装方法，其中，所述步骤3中，采用脉冲激光沉积、溅射、或者等离子体增强化学气相沉积的方式形成类金刚石散射层；
    所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
  4. 如权利要求1所述的OLED封装方法，其中，所述步骤1中，采用等离子体增强化学气相沉积、原子层沉积、脉冲激光沉积、或者溅射的方式形成第一阻隔层；
    所述第一阻隔层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、碳氮化硅、氧化硅、及二氧化钛中的一种或多种；所述第一阻隔层的厚度为0.5μm-1μm；
    所述步骤4中，利用喷墨打印、等离子体增强化学气相沉积、或者狭缝涂布的方式形成第一有机缓冲层；所述第一有机缓冲层的材料包括亚克 力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种；所述第一有机缓冲层的厚度为1μm-10μm。
  5. 如权利要求1所述的OLED封装方法，还包括：步骤6、在第二阻隔层上形成整面覆盖所述第二阻隔层的第二硅掺杂类金刚石层，在第二硅掺杂类金刚石层上形成整面覆盖所述第二硅掺杂类金刚石层的第二有机缓冲层，在第二有机缓冲层上形成整面覆盖所述第二有机缓冲层的第三阻隔层。
  6. 一种OLED封装结构，包括OLED器件、设于OLED器件上且整面覆盖所述OLED器件的第一阻隔层、设于第一阻隔层上且整面覆盖所述第一阻隔层的第一硅掺杂类金刚石层、设于第一硅掺杂类金刚石层上的类金刚石散射层、设于第一硅掺杂类金刚石层及类金刚石散射层上且整面覆盖所述类第一硅掺杂类金刚石层及金刚石散射层的第一有机缓冲层、设于第一有机缓冲层上且整面覆盖所述第一有机缓冲层的第二阻隔层。
  7. 如权利要求6所述的OLED封装结构，其中，所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm。
  8. 如权利要求6所述的OLED封装结构，其中，所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
  9. 如权利要求6所述的OLED封装结构，其中，所述第一阻隔层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、碳氮化硅、氧化硅、及二氧化钛中的一种或多种；所述第一阻隔层的厚度为0.5μm-1μm；
    所述第一有机缓冲层的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种；所述第一有机缓冲层的厚度为1μm-10μm。
  10. 如权利要求6所述的OLED封装结构，还包括：设于第二阻隔层上且整面覆盖所述第二阻隔层的第二硅掺杂类金刚石层、设于第二硅掺杂类金刚石层上且整面覆盖所述第二硅掺杂类金刚石层的第二有机缓冲层、设于第二有机缓冲层上且整面覆盖所述第二有机缓冲层的第三阻隔层。
  11. 一种OLED封装结构，包括OLED器件、设于OLED器件上且整面覆盖所述OLED器件的第一阻隔层、设于第一阻隔层上且整面覆盖所述 第一阻隔层的第一硅掺杂类金刚石层、设于第一硅掺杂类金刚石层上的类金刚石散射层、设于第一硅掺杂类金刚石层及类金刚石散射层上且整面覆盖所述类第一硅掺杂类金刚石层及金刚石散射层的第一有机缓冲层、设于第一有机缓冲层上且整面覆盖所述第一有机缓冲层的第二阻隔层；
    其中，所述第一硅掺杂类金刚石层的材料为掺杂硅元素的类金刚石，其中，硅元素的含量小于10wt％；所述第一硅掺杂类金刚石层的光线透过率大于或者等于95％；所述第一硅掺杂类金刚石层的厚度为10nm-100nm；
    其中，所述类金刚石散射层的材料为未掺杂的类金刚石；所述类金刚石散射层包括间隔设置的多个条形类金刚石膜层，或者包括呈阵列排布的多个圆形类金刚石膜层；所述类金刚石散射层的厚度为10nm-1μm。
  12. 如权利要求11所述的OLED封装结构，其中，所述第一阻隔层的材料包括锆铝酸盐、石墨烯、氧化铝、二氧化锆、过氧化锌、氮化硅、碳氮化硅、氧化硅、及二氧化钛中的一种或多种；所述第一阻隔层的厚度为0.5μm-1μm；
    所述第一有机缓冲层的材料包括亚克力树脂、聚苯乙烯类化合物、及聚酯类化合物中的一种或多种；所述第一有机缓冲层的厚度为1μm-10μm。
  13. 如权利要求11所述的OLED封装结构，还包括：设于第二阻隔层上且整面覆盖所述第二阻隔层的第二硅掺杂类金刚石层、设于第二硅掺杂类金刚石层上且整面覆盖所述第二硅掺杂类金刚石层的第二有机缓冲层、设于第二有机缓冲层上且整面覆盖所述第二有机缓冲层的第三阻隔层。
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