WO2020077698A1 - 一种有机发光二极管器件的封装结构及其制作方法 - Google Patents

一种有机发光二极管器件的封装结构及其制作方法 Download PDF

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WO2020077698A1
WO2020077698A1 PCT/CN2018/113911 CN2018113911W WO2020077698A1 WO 2020077698 A1 WO2020077698 A1 WO 2020077698A1 CN 2018113911 W CN2018113911 W CN 2018113911W WO 2020077698 A1 WO2020077698 A1 WO 2020077698A1
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layer
organic buffer
hydrophobic
buffer layer
organic
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PCT/CN2018/113911
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French (fr)
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郭天福
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武汉华星光电半导体显示技术有限公司
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Priority to US16/464,208 priority Critical patent/US11108017B2/en
Publication of WO2020077698A1 publication Critical patent/WO2020077698A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of display technology, and in particular to an organic light emitting diode device packaging structure and a manufacturing method thereof.
  • Organic light-emitting diodes (English full name: Organic Light-Emitting Diode, OLED for short) are also known as organic electro-laser displays and organic light-emitting semiconductors.
  • the basic structure of OLED is a thin and transparent indium tin oxide (ITO) with semiconductor characteristics, which is connected to the positive electrode of electricity, plus another metal cathode, wrapped in a sandwich structure.
  • the entire structure layer includes: a hole transport layer (HTL), a light emitting layer (EL) and an electron transport layer (ETL).
  • HTL hole transport layer
  • EL light emitting layer
  • ETL electron transport layer
  • OLED Unlike TFT-LCD, OLED emits light by its own characteristics and does not require a backlight, so visibility and brightness are high, followed by low voltage requirements and high power saving efficiency, plus fast response, light weight and thin thickness , With simple structure and low cost, is regarded as one of the most promising products in the 21st century.
  • OLED can be made into a flexible device that can be bent on a flexible substrate, which is a huge advantage unique to OLED.
  • thin film packaging English name: Thin-Film Encapsulation (TFE) technology is an essential core technology.
  • the presence of water and oxygen in the external environment is its fatal killer. Therefore, the most important thing for thin film packaging technology is the performance of its water and oxygen barrier layer. Flexible bending and other properties.
  • the external water and oxygen invasion pathways can be divided into two categories: the first is that water and oxygen directly penetrate the TFE film layer into the OLED device from top to bottom; the second is that water and oxygen enter the eroded OLED from the side of the TFE film layer, Therefore, these two invasion routes are the prerequisites that must be considered in the design of the TFE membrane structure.
  • the foreign substances generated during the current process cause the outside water and oxygen to enter the inside of the OLED device through way two, which ultimately leads to the failure of the TFE package. Therefore, there is a need to find an OLED packaging structure to effectively cover the foreign matter generated during the manufacturing process and reduce the possibility of water and oxygen intruding into the interior of the OLED device.
  • the present invention provides an organic light emitting diode device packaging structure and a method of manufacturing the same Inferior problems.
  • the present invention provides an organic light emitting diode display device packaging structure, which includes a gate insulating layer, a first barrier layer, a first organic buffer layer, a first hydrophobic layer, and a second organic The buffer layer and the second barrier layer.
  • a pixel definition layer and a barrier wall are provided on the gate insulating layer, wherein the area between the effective display area edge of the pixel definition layer and the barrier wall is a working area.
  • the first barrier layer covers the pixel definition layer and the retaining wall, the first organic buffer layer is disposed on the first barrier layer above the pixel definition layer, and the first hydrophobic layer Disposed on the first organic buffer layer above the working area, wherein the surface of the first hydrophobic layer has a micro-nano structure for limiting the boundary of the first organic buffer layer, and the second organic buffer layer It is disposed on the first hydrophobic layer, and the second barrier layer covers the second organic buffer layer.
  • the gap between the micro-nano structures on the surface of the first hydrophobic layer is less than or equal to 50 ⁇ m.
  • the material of the first hydrophobic layer includes polytetrafluoroethylene.
  • micro-nano structure on the surface of the first hydrophobic layer is formed by plasma surface etching.
  • first hydrophobic layer is deposited on the first organic buffer layer by physical vapor deposition.
  • constituent material of the first organic buffer layer includes one of acrylic and epoxy resin compounds.
  • the second organic buffer layer is further provided with a second hydrophobic layer and a third organic buffer layer.
  • the surface of the second hydrophobic layer has a micro-nano structure for limiting the boundary of the second organic buffer layer; the third organic buffer layer is disposed between the second hydrophobic layer and the second barrier layer .
  • the packaging structure of the organic light emitting diode display device further includes a glass substrate, a polyimide substrate and a functional layer arranged in sequence.
  • the polyimide substrate is disposed on the glass substrate; the functional layer is disposed between the polyimide substrate and the gate insulating layer.
  • the functional layer includes: a hole transport layer, a light emitting layer, and an electron transport layer.
  • the hole transport layer is provided on the polyimide substrate; the light emitting layer is provided on the hole transport layer; and the electron transport layer is provided on the light emitting layer.
  • the invention also provides a method for manufacturing an organic light emitting diode display packaging structure, which comprises the following steps: providing a glass substrate; coating the polyimide material on the glass substrate by a polyimide coating machine, and forming the polymer through high temperature curing An imide substrate; a functional layer is formed on the polyimide substrate through a TFT process; a gate insulating layer is formed on the functional layer through a TFT process, and a pixel definition layer and a pixel definition layer are provided on the gate insulating layer A retaining wall; a first barrier layer is provided on the pixel definition layer and the retaining wall; a first organic buffer layer is provided on the first barrier layer above the pixel definition layer; A first hydrophobic layer is provided on the first organic buffer layer, and then a plasma etching process is performed on the surface of the first hydrophobic layer to make the surface of the first hydrophobic layer have a micro-nano structure; a second is provided on the first hydrophobic layer An organic buffer layer; a second barrier layer is
  • the invention relates to an organic light emitting diode device packaging structure and a manufacturing method thereof.
  • the packaging structure deposits a layer of hydrophobic material with a micro-nano structure in the area from its light emitting area (effective display area) to the organic buffer layer barrier wall, so that it can effectively limit the material of the first organic buffer layer during preparation Flow, so that the second organic buffer layer can be deposited again on the first hydrophobic layer, so that the thickness of the double-layer organic buffer layer can better wrap foreign objects in the area, thereby reducing the passage of water and oxygen
  • the possibility of these areas entering the inside of the OLED device enhances the protection ability of the TFE to the OLED device.
  • FIG. 1 is a schematic diagram of an organic light emitting diode display package structure according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic plan view of an OLED device.
  • FIG. 3 is a schematic diagram of a hydrophobic layer having a micro-nano structure according to the present invention.
  • Example 4 is a schematic diagram of an organic light emitting diode display package structure of Example 2 of the present invention.
  • FIG. 5 is a manufacturing flowchart of the organic light emitting diode display package structure of the present invention.
  • the logo in the picture is as follows:
  • the first barrier layer 8. The first organic buffer layer
  • the first water-repellent layer 10.
  • the second organic buffer layer 10.
  • Electroluminescent layer 14 The second common floor
  • the second water-repellent layer 16 The third organic buffer layer
  • this patent provides an organic light emitting diode display package structure, which includes a glass substrate 1, a polyimide substrate 2, a functional layer 3, a gate insulating layer 4, a pixel definition layer 5, and a barrier wall arranged in this order 6.
  • the polyimide substrate 2 is disposed on the glass substrate 1. Specifically, the polyimide liquid is coated on the glass substrate 1 using a polyimide coating machine, and then the polyimide substrate 2 is formed through a process such as high temperature curing, and then the upper film layer is manufactured Finally, the laser ablation technology is used to separate the glass substrate 1 and the polyimide substrate 2 to obtain a flexible AMOLED (English: Active-matrix organic light-emitting diode, Chinese translation: active matrix organic light-emitting diode or active matrix organic light-emitting diode) panel, which can meet more customer needs.
  • AMOLED Active-matrix organic light-emitting diode
  • Chinese translation active matrix organic light-emitting diode or active matrix organic light-emitting diode
  • the functional layer 3 is disposed between the polyimide substrate 2 and the gate insulating layer 4.
  • the functional layer 3 includes: a hole transport layer, a light emitting layer, and an electron transport layer.
  • the hole transport layer is provided on the polyimide substrate; the light emitting layer is provided on the hole transport layer; and the electron transport layer is provided on the light emitting layer.
  • the hole transport layer controls the transport of holes, thereby controlling the recombination of holes with electrons in the light-emitting layer, thereby improving luminous efficiency.
  • the electron transport layer controls the transport of electrons, thereby controlling the recombination of electrons and holes in the light-emitting layer, thereby improving luminous efficiency.
  • the pixel definition layer 5 and the blocking wall 6 are provided on the gate insulating layer 4.
  • the pixel definition layer 5 includes an effective display area 51 and a working area 52.
  • the surface of the effective display area 51 of the pixel definition layer 5 is provided with a first common layer 12, an electroluminescent layer 13 and a second common layer 14 in sequence; the edge of the effective display area 51 of the pixel definition layer 5 is The area between the retaining walls 6 is the working area 52.
  • the first barrier layer 7 covers the pixel definition layer 5 and the retaining wall 6.
  • the first organic buffer layer 8 is disposed on the first barrier layer 7 above the pixel definition layer 5.
  • the first organic buffer layer 8 is made of one of acrylic and epoxy resin compounds, and the first organic buffer layer 8 made thereby has extremely strong hydrophilicity.
  • the first hydrophobic layer 9 is disposed on the first organic buffer layer 8 above the working area 52 of the pixel definition layer 5.
  • the surface of the first hydrophobic layer 9 has a micro-nano structure 91 for limiting the boundary of the first organic buffer layer 8.
  • the first hydrophobic layer 9 is made by depositing polytetrafluoroethylene by physical vapor deposition.
  • the micro-nano structure 91 is formed by plasma etching on the surface of the hydrophobic layer, and the gap between the micro-nano structures 91 on the surface of the first hydrophobic layer 9 is less than or equal to 50 ⁇ m. If the gap between the micro-nano structures 91 is greater than 50 ⁇ m, the hydrophobic performance of the first hydrophobic layer 9 cannot be enhanced.
  • the second organic buffer layer 10 is disposed on the first hydrophobic layer 9.
  • the second barrier layer 11 covers the second organic buffer layer 10.
  • the second organic buffer layer is made of one of acrylic and epoxy resin compounds.
  • the organic light emitting diode display packaging structure described in this embodiment further includes: a second hydrophobic layer 15, the surface of the second hydrophobic layer 15 has a micro-nano structure 91 for Limit the boundary of the second organic buffer layer 10; the second hydrophobic layer 15 is disposed on the second organic buffer layer 10; the third organic buffer layer 16, the third organic buffer layer 16 is disposed on the Between the second hydrophobic layer 15 and the second barrier layer 11.
  • the manufacturing method of the organic light emitting diode display packaging structure includes the following steps, and the components mentioned in the following steps are shown in FIGS. 1 to 4: S1, providing a glass substrate 1; S2, in glass A polyimide material is coated on the substrate 1 by a polyimide coating machine, and cured at a high temperature to form a polyimide substrate 2; S3, a hole transport layer is sequentially formed on the polyimide substrate 2 through a TFT process , A light emitting layer and an electron transport layer constitute a functional layer 3; S4, a gate insulating layer 4 is provided on the functional layer 3, and a pixel definition layer 5 and a barrier wall 6 are provided on the gate insulating layer 4; S5, in the A first barrier layer 7 is provided on the pixel definition layer 5 and the retaining wall 6; S6, a first organic buffer layer 8 is provided on the first barrier layer 7 above the pixel definition layer 5; S7, A first hydrophobic layer 9 is provided on the first organic buffer layer 8 above the working area of the

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Abstract

本发明提供一种有机发光二极管显示器封装结构及其制作方法，包括依次设置的栅极绝缘层、第一阻隔层、第一有机缓冲层、第一疏水层、第二有机缓冲层以及第二阻隔层。本发明涉及的一种有机发光二极管器件的封装结构及其制作方法。其通过在其发光区域（有效显示区域）到有机缓冲层阻挡墙之间的区域内沉积具有微纳米结构的疏水材料层，使其能有效限制制备时第一有机缓冲层材料的流动，从而可以在所述第一疏水层之上再次沉积所述第二有机缓冲层，如此，双层的有机缓冲层的厚度能够更好的包裹住该区域内的异物，从而减少水氧通过这些区域进入OLED器件内部的可能，增强TFE对OLED器件的保护能力。

Description

一种有机发光二极管器件的封装结构及其制作方法 技术领域
本发明涉及显示技术领域，具体涉及一种有机发光二极管器件的封装结构及其制作方法。
 背景技术
有机发光二极管（英文全称：Organic Light-Emitting Diode，简称OLED）又称为有机电激光显示、有机发光半导体。OLED的基本结构是由一薄而透明具半导体特性之铟锡氧化物(ITO)，与电力之正极相连，再加上另一个金属阴极，包成如三明治的结构。整个结构层中包括了：空穴传输层(HTL)、发光层(EL)与电子传输层(ETL)。当电力供应至适当电压时，正极空穴与阴极电荷就会在发光层中结合，产生光亮，依其配方不同产生红、绿和蓝RGB三基色，构成基本色彩。
与TFT-LCD不同的是，OLED依靠自身的特性发光，不需要背光源，因此可视度和亮度均高，其次是电压需求低且省电效率高，加上反应快、重量轻、厚度薄，构造简单，成本低等，被视为 21世纪最具前途的产品之一。特别是OLED可以在柔性基板上做成能弯曲的柔性器件，这更是OLED所特有的巨大优势。为了实现OLED的该种优势（柔性显示），薄膜封装（英文全称：Thin-Film Encapsulation，简称TFE）技术是必不可少的核心技术。
对于OLED器件，外界使用环境中存在的水氧是其致命杀手，因而对于薄膜封装技术，最为重要的是其阻水氧阻隔层的性能，在此基础上需兼顾TFE膜层的光学穿透以及柔性弯曲等性能。对于OLED器件，外界水氧的入侵途径可分为两类：途径一是水氧从上向下直接穿透TFE膜层进入OLED器件内部；途径二是水氧从TFE膜层侧面进入侵蚀OLED，因此这两种入侵途径是TFE膜层结构设计中必须考虑的前提条件。目前制程过程中产生的异物导致外界水氧更多的是通过途径二进入OLED器件内部，最终导致TFE封装失效。因此，需要寻找一种OLED的封装结构来有效地包住制程过程中产生的异物，减少水氧侵入OLED器件内部的可能。
 技术问题
为解决上述技术问题，本发明提供一种有机发光二极管器件的封装结构及其制作方法，其能够解决目前水氧易通过制程过程中产生的异物侵入OLED器件内部， TFE技术对OLED器件的保护能力低等问题。
 技术解决方案
解决上述问题的技术方案是，本发明提供一种有机发光二极管显示器件的封装结构，包括依次设置的栅极绝缘层、第一阻隔层、第一有机缓冲层、第一疏水层、第二有机缓冲层以及第二阻隔层。所述栅极绝缘层上设有像素定义层以及挡墙，其中所述像素定义层的有效显示区域边缘与挡墙之间的区域为工作区。所述第一阻隔层覆盖于所述像素定义层及所述挡墙上，所述第一有机缓冲层设置于所述像素定义层上方的所述第一阻隔层上，所述第一疏水层设置于所述工作区上方的所述第一有机缓冲层上，其中所述第一疏水层表面具有微纳米结构，用于限制所述第一有机缓冲层的边界，所述第二有机缓冲层设置于所述第一疏水层上，所述第二阻隔层覆盖于所述第二有机缓冲层上。
进一步的，其中所述第一疏水层表面的微纳米结构之间的间隙小于或等于50μm。
进一步的，其中所述第一疏水层的构成材料包括聚四氟乙烯。
进一步的，其中所述第一疏水层表面的微纳米结构是通过等离子表面蚀刻的方式形成。
进一步地，其中所述第一疏水层通过物理气相沉积的方式沉积在所述第一有机缓冲层上。
进一步地，其中所述第一有机缓冲层的构成材料包括亚克力、环氧树脂化合物中的一种。
进一步地，其中所述第二有机缓冲层上还设置有第二疏水层和第三有机缓冲层。其中所述第二疏水层表面具有微纳米结构，用于限制所述第二有机缓冲层的边界；所述第三有机缓冲层设置于所述第二疏水层与所述第二阻隔层之间。
进一步地，其中有机发光二极管显示器件的封装结构还包括依次设置的玻璃基板、聚酰亚胺基板以及功能层。所述聚酰亚胺基板设置于所述玻璃基板上；所述功能层设置于所述聚酰亚胺基板与所述栅极绝缘层之间。
进一步地，其中所述功能层包括：空穴传输层、发光层以及电子传输层。所述空穴传输层设置于所述聚酰亚胺基板上；所述发光层设置于所述空穴传输层上；所述电子传输层设置于所述发光层上。
本本发明还提供一种有机发光二极管显示器封装结构的制作方法，包括以下步骤：提供一玻璃基板；在玻璃基板上通过聚酰亚胺涂布机涂布聚酰亚胺材料，经过高温固化形成聚酰亚胺基板；在聚酰亚胺基板上经过TFT工艺制程形成功能层；通过TFT工艺制程在所述功能层上形成栅极绝缘层，并在所述栅极绝缘层上设置像素定义层及挡墙；在所述像素定义层及所述挡墙上设置第一阻隔层；在所述像素定义层上方的所述第一阻隔层上设置第一有机缓冲层；在所述工作区上方的所述第一有机缓冲层上设置第一疏水层，然后对所述第一疏水层表面进行等离子蚀刻处理，使第一疏水层表面具有微纳米结构；在所述第一疏水层上设置第二有机缓冲层；在所述第二有机缓冲层上覆盖第二阻隔层。
 有益效果
本发明涉及的一种有机发光二极管器件的封装结构及其制作方法。其中所述封装结构通过在其发光区域（有效显示区域）到有机缓冲层阻挡墙之间的区域内沉积具有微纳米结构的疏水材料层，使其能有效限制制备时第一有机缓冲层材料的流动，从而可以在所述第一疏水层之上再次沉积所述第二有机缓冲层，如此，双层的有机缓冲层的厚度能够更好的包裹住该区域内的异物，从而减少水氧通过这些区域进入OLED器件内部的可能，增强TFE对OLED器件的保护能力。
 附图说明
图1是本发明实施例1的有机发光二极管显示器封装结构示意图。
图2是OLED器件的平面示意图。
图3是本发明具有微纳米结构的疏水层示意图。
图4是本发明实施例2的有机发光二极管显示器封装结构示意图。
图5是本发明有机发光二极管显示器封装结构的制作流程图。
图中标识如下：
1、玻璃基板                       2、聚酰亚胺基板
3、功能层                         4、栅极绝缘层
5、像素定义层                     6、挡墙
7、第一阻隔层                     8、第一有机缓冲层
9、第一疏水层                     10、第二有机缓冲层
11、第二阻隔层                    12、第一公用层
13、电致发光层                    14、第二公用层
15、第二疏水层                    16、第三有机缓冲层
51、有效显示区域                  52、工作区
91、微纳米结构
 本发明的最佳实施方式
以下实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「顶」、「底」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
实施例1
如图1所示，本专利提供一种有机发光二极管显示器封装结构，包括依次设置的玻璃基板1、聚酰亚胺基板2、功能层3、栅极绝缘层4、像素定义层5、挡墙6、第一阻隔层7、第一有机缓冲层8、第一疏水层9、第二有机缓冲层10以及第二阻隔层11。
其中所述聚酰亚胺基板2设置于所述玻璃基板1上。具体的，利用聚酰亚胺涂布机将聚酰亚胺液涂布在所述玻璃基板1上，然后经过高温固化等工艺形成所述聚酰亚胺基板2，然后进行上面膜层的制作，最后经过激光剥离技术将所述玻璃基板1与所述聚酰亚胺基板2进行分离得到柔性AMOLED（英语：Active-matrix organic light-emitting diode，中译：有源矩阵有机发光二极体或主动矩阵有机发光二极体）面板，借此可以满足更多的客户需求。
其中所述功能层3设置于所述聚酰亚胺基板2与所述栅极绝缘层4之间。所述功能层3包括：空穴传输层、发光层以及电子传输层。所述空穴传输层设置于所述聚酰亚胺基板上；所述发光层设置于所述空穴传输层上；所述电子传输层设置于所述发光层上。所述空穴传输层控制着空穴的传输，进而控制空穴在发光层中与电子的复合，进而提高发光效率。其中所述电子传输层控制着电子的传输，进而控制电子在发光层中与空穴的复合，进而提高发光效率。
所述栅极绝缘层4上设有所述像素定义层5以及所述挡墙6。
如图1、图2所示，其中所述像素定义层5包括有效显示区域51和工作区52。所述像素定义层5的所述有效显示区域51表面依次设有第一公用层12，电致发光层13以及第二公用层14；所述像素定义层5的所述有效显示区域51边缘与所述挡墙6之间的区域为工作区52。
其中所述第一阻隔层7覆盖于所述像素定义层5及所述挡墙6上。
其中所述第一有机缓冲层8设置于所述像素定义层5上方的所述第一阻隔层7上。其中所述第一有机缓冲层8由亚克力及环氧树脂化合物中的一种制成，由此制成的第一有机缓冲层8具有极强的亲水性。
如图1、图3所示，其中所述第一疏水层9设置于所述像素定义层5的所述工作区52上方的所述第一有机缓冲层8上。其中所述第一疏水层9表面具有微纳米结构91，用于限制所述第一有机缓冲层8的边界。具体的，所述第一疏水层9通过物理气相沉积法沉积聚四氟乙烯制成。所述微纳米结构91为所述疏水层表面经过等离子蚀刻而成，且所述第一疏水层9表面的微纳米结构91之间的间隙小于或等于50μm。如若微纳米结构91之间的间隙大于50μm，则无法达到增强第一疏水层9的的疏水性能。
其中所述第二有机缓冲层10设置于所述第一疏水层9上。所述第二阻隔层11覆盖于所述第二有机缓冲层10上。其中所述第二有机缓冲层由亚克力及环氧树脂化合物中的一种制成。
实施例2
以下仅就本实施例与第一实施例间的相异之处进行说明，而其相同之处则在此不再赘述。
如图4所示，相较于实施例1，本实施例所述的有机发光二极管显示器封装结构还包括：第二疏水层15，所述第二疏水层15表面具有微纳米结构91，用于限制所述第二有机缓冲层10的边界；所述第二疏水层15设置于所述第二有机缓冲层10上；第三有机缓冲层16，所述第三有机缓冲层16设置于所述第二疏水层15与所述第二阻隔层11之间。
如图5所示，有机发光二极管显示器封装结构的制作方法，包括以下步骤，以下各步骤中所提到的部件参见图1至图4所示： S1，提供一玻璃基板1；S2，在玻璃基板1上通过聚酰亚胺涂布机涂布聚酰亚胺材料，经过高温固化形成聚酰亚胺基板2；S3，在聚酰亚胺基板2上经过TFT工艺制程依次形成空穴传输层、发光层以及电子传输层组成功能层3；S4，在功能层3上设置栅极绝缘层4，并在所述栅极绝缘层4上设置像素定义层5及挡墙6；S5，在所述像素定义层5及所述挡墙6上设置第一阻隔层7；S6，在所述像素定义层5上方的所述第一阻隔层7上设置第一有机缓冲层8；S7，在所述像素定义层5的工作区上方的所述第一有机缓冲层8上设置第一疏水层9，然后对所述第一疏水层9表面进行等离子蚀刻处理，使第一疏水层9表面具有微纳米结构91；S8，在所述第一疏水层9上设置第二有机缓冲层10；S9，在所述第二有机缓冲层10上覆盖第二阻隔层11。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种有机发光二极管显示器封装结构，其包括：
    栅极绝缘层，所述栅极绝缘层上设有像素定义层以及挡墙；
    所述像素定义层的有效显示区域边缘与挡墙之间的区域为工作区；
    第一阻隔层；所述第一阻隔层覆盖于所述像素定义层及所述挡墙上；
    第一有机缓冲层，所述第一有机缓冲层设置于所述像素定义层上方的所述第一阻隔层上；
    第一疏水层，所述第一疏水层设置于所述工作区上方的所述第一有机缓冲层上，所述第一疏水层表面具有微纳米结构，用于限制所述第一有机缓冲层的边界；
    第二有机缓冲层，所述第二有机缓冲层设置于所述第一疏水层上；以及
    第二阻隔层，所述第二阻隔层覆盖于所述第二有机缓冲层上。
  2. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，所述第一疏水层表面的微纳米结构之间的间隙小于或等于50μm。
  3. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，所述第一疏水层的构成材料包括聚四氟乙烯。
  4. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，所述第一疏水层表面的微纳米结构是通过等离子表面蚀刻的方式形成。
  5. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，所述第一疏水层通过物理气相沉积的方式沉积在所述第一有机缓冲层上。
  6. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，所述第一有机缓冲层的构成材料包括亚克力或环氧树脂化合物中的一种。
  7. 根据权利要求1所述的有机发光二极管显示器封装结构，其中，还包括：
    第二疏水层，所述第二疏水层设置于所述第二有机缓冲层上，所述第二疏水层表面具有微纳米结构，用于限制所述第二有机缓冲层的边界；
    第三有机缓冲层，所述第三有机缓冲层设置于所述第二疏水层与所述第二阻隔层之间。
  8. 根据权利要求1所述的有机发光二极管显示器封装结构，其还包括：
    玻璃基板；
    聚酰亚胺基板，所述聚酰亚胺基板设置于所述玻璃基板上；以及
    功能层，所述功能层设置于所述聚酰亚胺基板与所述栅极绝缘层之间。
  9. 根据权利要求8所述的有机发光二极管显示器封装结构，其中，所述功能层包括：
    空穴传输层，所述空穴传输层设置于所述聚酰亚胺基板上；
    发光层，所述发光层设置于所述空穴传输层上；以及
    电子传输层，所述电子传输层设置于所述发光层上。
  10. 一种有机发光二极管显示器封装结构的制作方法，其包括以下步骤：
    提供一玻璃基板；
    在玻璃基板上通过聚酰亚胺涂布机涂布聚酰亚胺材料，经过高温固化形成聚酰亚胺基板；
    在聚酰亚胺基板上经过TFT工艺制程形成功能层；
    通过TFT工艺制程在所述功能层上形成栅极绝缘层，并在所述栅极绝缘层上设置像素定义层及挡墙；
    在所述像素定义层及所述挡墙上设置第一阻隔层；
    在所述像素定义层上方的所述第一阻隔层上设置第一有机缓冲层；
    在所述工作区上方的所述第一有机缓冲层上设置第一疏水层，然后对所述第一疏水层表面进行等离子蚀刻处理，使第一疏水层表面具有微纳米结构；
    在所述第一疏水层上设置第二有机缓冲层；
    在所述第二有机缓冲层上覆盖第二阻隔层。
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