WO2018232948A1 - Oled显示器及其制作方法 - Google Patents

Oled显示器及其制作方法 Download PDF

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WO2018232948A1
WO2018232948A1 PCT/CN2017/098141 CN2017098141W WO2018232948A1 WO 2018232948 A1 WO2018232948 A1 WO 2018232948A1 CN 2017098141 W CN2017098141 W CN 2017098141W WO 2018232948 A1 WO2018232948 A1 WO 2018232948A1
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layer
quantum dot
oled display
oxygen barrier
water
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PCT/CN2017/098141
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French (fr)
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徐超
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武汉华星光电半导体显示技术有限公司
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Priority to US15/561,985 priority Critical patent/US20180374904A1/en
Publication of WO2018232948A1 publication Critical patent/WO2018232948A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

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  • the present invention relates to the field of flat panel displays, and more particularly to an OLED display and a method of fabricating the same.
  • the active matrix flat panel display has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • organic light-emitting diode (OLED) display technology is a promising flat panel display technology, which has excellent display performance, especially self-illumination, simple structure, ultra-thin and light, fast response.
  • Wide viewing angle, low power consumption and flexible display it is known as “dream display”, and its production equipment investment is much smaller than Thin Film Transistor-Liquid Crystal Display (TFT-LCD).
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • OLED has been on the eve of mass production. With the further development of research and the emergence of new technologies, OLED display devices will have a breakthrough development.
  • the CF layer is usually composed of red, green, and blue photoresist units, and the red, green, and blue photoresist units of the CF layer cannot perform good filtering on the white light emitting layer to emit white light. Therefore, the existing tandem-structured OLED display also has certain disadvantages, such as low efficiency and short life of the device under high brightness; the RGB luminescence spectrum has a wide half-width and a wide color gamut.
  • Quantum Dot refers to a semiconductor crystal grain having a particle diameter of 1-100 nm. Due to the small particle size of QD, the quantum band-limited effect is generated by the exciton Boer radius of the corresponding bulk material, and the continuous band structure of the bulk material is transformed into a discrete energy level structure. Under the excitation of the external light source, The electrons will transition and emit fluorescence. QD is a special kind of discrete energy The grade structure makes its half-wave width narrower, so it can emit high-purity monochromatic light, which has higher luminous efficiency than conventional displays. At the same time, due to the band gap of the QD, the size of the QD is greatly affected, and the light of different wavelengths can be excited by adjusting the size of the QD or using QDs of different compositions.
  • An object of the present invention is to provide an OLED display, which can effectively improve the brightness and color gamut of an OLED display, and effectively improve the light extraction efficiency and lifetime of the light emitting device.
  • Another object of the present invention is to provide a method for fabricating an OLED display, which can effectively improve the brightness and color gamut of the OLED display, and effectively improve the light extraction efficiency and lifetime of the light emitting device.
  • the present invention provides an OLED display comprising a TFT substrate, a WOLED layer disposed on the TFT substrate, a water oxygen barrier layer disposed on the WOLED layer, and a water and oxygen barrier layer disposed on the water and oxygen barrier layer. a color filter layer, a light extraction layer disposed on the color filter layer, and a package cover plate disposed above the light extraction layer;
  • the color filter layer comprises a plurality of transparent spacers, a plurality of red quantum dot units, a plurality of green quantum dot units and a plurality of blue quantum dot units; wherein the transparent spacers are on the water and oxygen barrier layer A plurality of red pixel slots, a plurality of green pixel slots, and a plurality of blue pixel slots are defined, and the red quantum dot unit, the green quantum dot unit, and the blue quantum dot unit are respectively formed in the red pixel slot and the green pixel. In the slot and the blue pixel slot.
  • the material of the transparent spacer is silicon nitride, silicon oxide, titanium oxide or zinc oxide.
  • the material of the light extraction layer is titanium oxide or zinc oxide.
  • the material of the water oxygen barrier layer is silicon nitride or silicon oxide.
  • the WOLED layer includes a pixel defining layer and a plurality of WOLED devices spaced apart by a pixel defining layer.
  • the invention also provides a method for manufacturing an OLED display, comprising the following steps:
  • Step S1 providing a TFT substrate, forming a WOLED layer on the TFT substrate, forming a water and oxygen barrier layer on the WOLED layer;
  • Step S2 depositing and patterning a plurality of transparent spacers on the water and oxygen barrier layer, the plurality of transparent spacers surrounding the water and oxygen barrier layer to surround a plurality of red pixel slots, a plurality of green pixel slots, and a number of blue pixel slots;
  • Step S3 providing a red quantum dot ink, a green quantum dot ink, and a blue quantum dot ink, respectively coating the red quantum dot ink, the green quantum dot ink, and the blue quantum dot ink in the plurality of inkjet printing manners.
  • the red pixel slot, the plurality of green pixel slots, and the plurality of blue pixel slots respectively form a plurality of patterned red quantum dot units, a plurality of green quantum dot units, and a plurality of blue quantum dot units; thereby obtaining a plurality of Transparent isolation column, several red quantum dot units, several a color filter layer of a green quantum dot unit and a plurality of blue quantum dot units;
  • Step S4 forming a light extraction layer on the color filter layer, covering the package cover on the light extraction layer, and completing the fabrication of the OLED display.
  • the transparent isolation column is deposited by physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation, and the transparent isolation column is made of silicon nitride, silicon oxide, titanium oxide or Zinc oxide.
  • the light extraction layer is formed by spin coating, physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation, and the material of the light extraction layer is titanium oxide or zinc oxide.
  • the water-oxygen barrier layer is formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation, and the material of the water-oxygen barrier layer is silicon nitride or silicon oxide.
  • the WOLED layer includes a pixel defining layer and a plurality of WOLED devices spaced apart by a pixel defining layer.
  • the present invention also provides an OLED display, comprising a TFT substrate, a WOLED layer disposed on the TFT substrate, a water oxygen barrier layer disposed on the WOLED layer, and a color filter layer disposed on the water and oxygen barrier layer. a light extraction layer disposed on the color filter layer and a package cover plate disposed above the light extraction layer;
  • the color filter layer comprises a plurality of transparent spacers, a plurality of red quantum dot units, a plurality of green quantum dot units and a plurality of blue quantum dot units; wherein the transparent spacers are on the water and oxygen barrier layer A plurality of red pixel slots, a plurality of green pixel slots, and a plurality of blue pixel slots are defined, and the red quantum dot unit, the green quantum dot unit, and the blue quantum dot unit are respectively formed in the red pixel slot and the green pixel. In the slot and the blue pixel slot;
  • the material of the transparent isolation column is silicon nitride, silicon oxide, titanium oxide or zinc oxide;
  • the material of the light extraction layer is titanium oxide or zinc oxide
  • the material of the water oxygen barrier layer is silicon nitride or silicon oxide.
  • the OLED display of the present invention comprises a TFT substrate, a WOLED layer, a water and oxygen barrier layer, a color filter layer, a light extraction layer, and a package cover plate disposed in order from bottom to top, wherein the color filter
  • the layer includes a plurality of transparent spacers, a plurality of red quantum dot units, a plurality of green quantum dot units, and a plurality of blue quantum dot units.
  • the present invention provides a transparent isolation pillar in the color filter layer to emit the WOLED layer.
  • White light passes through and displays to form white pixel points, thereby realizing RGBW four-pixel display, which can effectively improve the brightness of the OLED display, and greatly improve the color gamut of the OLED display by introducing quantum dots into the color filter layer.
  • the WOLED is further improved by adding a water oxygen barrier layer and a light extraction layer over the WOLED layer. Device lifetime and light extraction efficiency.
  • the white light emitted by the WOLED layer is transmitted and displayed to form a white pixel point, thereby realizing RGBW four-pixel display, which can effectively Increasing the brightness of the OLED display, and greatly increasing the color gamut of the OLED display by introducing quantum dots in the color filter layer, and increasing the lifetime and light output of the WOLED device by adding a water-oxygen barrier layer and a light extraction layer over the WOLED layer. effectiveness.
  • FIG. 1 is a schematic flow chart of a method of fabricating an OLED display of the present invention
  • step S1 is a schematic diagram of step S1 of the method for fabricating an OLED display of the present invention
  • step S2 is a schematic diagram of step S2 of the method for fabricating an OLED display of the present invention
  • step S3 is a schematic diagram of step S3 of the method for fabricating an OLED display of the present invention.
  • FIG. 5 is a schematic diagram of step S4 of the method for fabricating an OLED display of the present invention and a schematic structural view of the OLED display of the present invention.
  • the present invention provides an OLED display, comprising a TFT substrate 10, a WOLED layer 20 disposed on the TFT substrate 10, and a water and oxygen barrier layer 30 disposed on the WOLED layer 20, and disposed on the water. a color filter layer 40 on the oxygen barrier layer 30, a light extraction layer 50 disposed on the color filter layer 40, and a package cover 60 disposed above the light extraction layer 50;
  • the color filter layer 40 includes a plurality of transparent spacers 41, a plurality of red quantum dot units 42, a plurality of green quantum dot units 43, and a plurality of blue quantum dot units 44;
  • the water oxygen barrier layer 30 encloses a plurality of red pixel slots 412, a plurality of green pixel slots 413, and a plurality of blue pixel slots 414, and the red quantum dot unit 42, the green quantum dot unit 43, and the blue quantum dot unit 44 is formed correspondingly in the red pixel groove 412, the green pixel groove 413, and the blue pixel groove 414, respectively.
  • the material of the transparent spacer 41 is preferably a material having high light transmittance and good affinity with the quantum dot ink. Further, the material of the transparent spacer 41 is silicon nitride (SiNx). Silica (SiOx), titanium oxide (TiO2) or zinc oxide (ZnO).
  • the material of the light extraction layer 50 is preferably an inorganic material that blocks water oxygen. Further, the material of the light extraction layer 50 is titanium oxide or zinc oxide.
  • the water-oxygen barrier layer 30 is used to block the erosion of the WOLED layer 20 by water and oxygen.
  • the material of the water-oxygen barrier layer 30 is silicon nitride or silicon oxide.
  • the WOLED layer 20 includes a pixel defining layer (not shown) and a plurality of WOLED devices (not shown) spaced apart by a pixel defining layer.
  • the OLED display of the present invention by providing a transparent isolation pillar 41 in the color filter layer 40, the white light emitted by the WOLED layer 20 is transmitted and displayed to form a white pixel point, thereby realizing RGBW four-pixel display, which can be effective.
  • the brightness of the OLED display is increased, and the color gamut of the OLED display is greatly improved by introducing quantum dots in the color filter layer 40, and the WOLED device is improved by adding the water-oxygen barrier layer 30 and the light extraction layer 50 over the WOLED layer 20. Life into and out of the light efficiency.
  • the present invention further provides a method for fabricating an OLED display, comprising the following steps:
  • Step S1 as shown in FIG. 2, a TFT substrate 10 is provided, a WOLED layer 20 is formed on the TFT substrate 10, and a water and oxygen barrier layer 30 is formed on the WOLED layer 20.
  • the water-oxygen barrier layer 30 is used to block the erosion of the WOLED layer 20 by water and oxygen.
  • the material of the water-oxygen barrier layer 30 is silicon nitride or silicon oxide.
  • a physical vapor deposition (PVD), a chemical vapor deposition (CVD), an atomic layer deposition (ALD), or an evaporation method is used.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • ALD atomic layer deposition
  • evaporation method evaporation method.
  • the water oxygen barrier layer 30 is described.
  • the WOLED layer 20 includes a pixel defining layer and a plurality of WOLED devices spaced apart by the pixel defining layer.
  • Step S2 depositing and patterning a plurality of transparent spacers 41 on the water-oxygen barrier layer 30, the plurality of transparent spacers 41 surrounding the water-oxygen barrier layer 30 A red pixel slot 412, a plurality of green pixel slots 413, and a plurality of blue pixel slots 414.
  • the material of the transparent spacer 41 is preferably a material having high light transmittance and good affinity with the quantum dot ink. Further, the material of the transparent spacer 41 is silicon nitride (SiNx). Silica (SiOx), titanium oxide (TiO2) or zinc oxide (ZnO).
  • the transparent isolation pillar 41 is formed by physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation.
  • Step S3 as shown in FIG. 4, providing red quantum dot ink, green quantum dot ink and blue quantum dot ink, respectively printing red quantum dot ink, green quantum dot ink and blue quantum dot ink by inkjet printing
  • the plurality of red pixel slots 412, the plurality of green pixel slots 413, and the plurality of blue pixel slots 414 baking and drying are performed to respectively form a plurality of patterned red quantum dot units 42 and a plurality of green colors.
  • a quantum dot unit 43 and a plurality of blue quantum dot units 44 thereby obtaining color including a plurality of transparent spacers 41, a plurality of red quantum dot units 42, a plurality of green quantum dot units 43, and a plurality of blue quantum dot units 44 Filter layer 40.
  • Step S4 as shown in FIG. 5, a light extraction layer 50 is formed on the color filter layer 40, and the package cover 60 is covered on the light extraction layer 50 to encapsulate the OLED display, thereby completing the fabrication of the OLED display. .
  • the material of the light extraction layer 50 preferably blocks the inorganic material having better water oxygenity. Further, the material of the light extraction layer 50 is titanium oxide or zinc oxide.
  • the light extraction layer 50 is formed by spin coating, physical vapor deposition, chemical vapor deposition, atomic layer deposition, or evaporation.
  • the OLED display of the present invention includes a TFT substrate, a WOLED layer, a water and oxygen barrier layer, a color filter layer, a light extraction layer, and a package cover plate disposed in order from bottom to top, wherein the color filter layer
  • the invention comprises a plurality of transparent spacers, a plurality of red quantum dot units, a plurality of green quantum dot units and a plurality of blue quantum dot units.
  • the invention provides a white light emitted by the WOLED layer by providing a transparent isolation pillar in the color filter layer.
  • the white pixel points are formed, thereby realizing the RGBW four-pixel display, which can effectively improve the brightness of the OLED display, and greatly increase the color gamut of the OLED display by introducing quantum dots into the color filter layer.
  • the lifetime and light extraction efficiency of the WOLED device are improved.
  • the white light emitted by the WOLED layer is transmitted and displayed to form a white pixel point, thereby realizing RGBW four-pixel display, which can effectively Increasing the brightness of the OLED display, and greatly increasing the color gamut of the OLED display by introducing quantum dots in the color filter layer, and increasing the lifetime and light output of the WOLED device by adding a water-oxygen barrier layer and a light extraction layer over the WOLED layer. effectiveness.

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Abstract

一种OLED显示器及其制作方法。OLED显示器，包括由下至上依次设置的TFT基板（10）、WOLED层（20）、水氧阻隔层（30）、彩色滤光层（40）、光提取层（50）、及封装盖板（60），其中彩色滤光层（40）包括数个透明隔离柱（41）、数个红色量子点单元（42）、数个绿色量子点单元（43）及数个蓝色量子点单元（44），通过在彩色滤光层（40）中设置透明隔离柱（41），以使WOLED层（20）发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层（40）中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层（20）上方加入水氧阻隔层（30）和光提取层（50），提高了WOLED器件的寿命和出光效率。

Description

OLED显示器及其制作方法 技术领域
本发明涉及平面显示器领域，尤其涉及一种OLED显示器及其制作方法。
背景技术
主动矩阵平面显示器具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。其中，有机发光二极管(organic light-emitting diode，OLED)显示技术是一种极具发展前景的平板显示技术，它具有十分优异的显示性能，特别是自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于薄膜晶体管型液晶显示屏(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。目前OLED已处于大规模量产的前夜，随着研究的进一步深入，新技术的不断涌现，OLED显示器件必将有一个突破性的发展。
为实现OLED显示器的全彩化，一种方式是通过红绿蓝(RGB)子像素分别发光的并列式(side-by-side)结构来实现，另一种方式是通过白色有机发光二极管(White Organic Light Emitting Diode，WOLED)和彩色滤光(Color Filter，CF)层叠加的串联型(tandem WOLED+CF)结构来实现；在WOLED中，白光发光层通常由红、绿、蓝色荧光材料混合蒸镀而成，发出白光，经过CF层过滤后得到RGB单色光。由于WOLED与CF层叠加结构不需要精准的掩膜工艺，就可以实现OLED显示器的高分辨率，目前是应用较为广泛的一种。
然而上述WOLED与CF层叠加结构中，CF层通常由红、绿、蓝色光阻单元组成，而CF层的红、绿、蓝色光阻单元无法对白光发光层发射白光进行较好的滤光。因此，现有串联型结构的OLED显示器也存在一定的缺点，例如在高亮度下，器件的效率下降，寿命较短；RGB发光光谱的半峰宽较宽，色域不够广等。
量子点材料(Quantum Dot，简称QD)是指粒径在1-100nm的半导体晶粒。由于QD的粒径较小，小于或者接近相应体材料的激子波尔半径，产生量子限域效应，本体材料连续的能带结构会转变为分立的能级结构，在外部光源的激发下，电子会发生跃迁，发射荧光。QD这种特殊的分立能 级结构使其半波宽较窄，因而可发出较高纯度的单色光，相比于传统显示器具有更高的发光效率。同时，由于QD的能级带隙，受其尺寸影响较大，可以通过调控QD的尺寸或使用不同成分的QD来激发出不同波长的光。
发明内容
本发明的目的在于提供一种OLED显示器，可以有效提高OLED显示器的亮度及色域，并有效提高发光器件的出光效率和寿命。
本发明的目的还在于提供一种OLED显示器的制作方法，可以有效提高OLED显示器的亮度及色域，并有效提高发光器件的出光效率和寿命。
为实现上述目的，本发明提供一种OLED显示器，包括TFT基板、设于所述TFT基板上WOLED层、设于所述WOLED层上的水氧阻隔层、设于所述水氧阻隔层上的彩色滤光层、设于所述彩色滤光层上的光提取层及设于所述光提取层上方的封装盖板；
其中，所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；所述透明隔离柱在所述水氧阻隔层上围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽，所述红色量子点单元、绿色量子点单元及蓝色量子点单元分别对应形成于所述红色像素槽、绿色像素槽及蓝色像素槽中。
所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌。
所述光提取层的材料为氧化钛或氧化锌。
所述水氧阻隔层的材料为氮化硅或氧化硅。
所述WOLED层包括像素定义层及由像素定义层间隔开的数个WOLED器件。
本发明还提供一种OLED显示器的制作方法，包括以下步骤：
步骤S1、提供一TFT基板，在所述TFT基板上形成WOLED层，在所述WOLED层上形成水氧阻隔层；
步骤S2、在所述水氧阻隔层上沉积并图案化形成数个透明隔离柱，该数个透明隔离柱在所述水氧阻隔层上方围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽；
步骤S3、提供红色量子点油墨、绿色量子点油墨及蓝色量子点油墨，采用喷墨打印的方式将红色量子点油墨、绿色量子点油墨及蓝色量子点油墨分别涂布在所述数个红色像素槽、数个绿色像素槽及数个蓝色像素槽中，分别形成图形化的数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；从而得到包括数个透明隔离柱、数个红色量子点单元、数个 绿色量子点单元及数个蓝色量子点单元的彩色滤光层；
步骤S4、在所述彩色滤光层上形成光提取层，在所述光提取层上覆盖封装盖板，完成OLED显示器的制作。
所述步骤S2中，采用物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式沉积形成所述透明隔离柱，所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌。
所述步骤S4中，采用旋涂、物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式形成所述光提取层，所述光提取层的材料为氧化钛或氧化锌。
所述步骤S1中，采用物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式形成所述水氧阻隔层，所述水氧阻隔层的材料为氮化硅或氧化硅。
所述WOLED层包括像素定义层及由像素定义层间隔开的数个WOLED器件。
本发明还提供一种OLED显示器，包括TFT基板、设于所述TFT基板上WOLED层、设于所述WOLED层上的水氧阻隔层、设于所述水氧阻隔层上的彩色滤光层、设于所述彩色滤光层上的光提取层及设于所述光提取层上方的封装盖板；
其中，所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；所述透明隔离柱在所述水氧阻隔层上围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽，所述红色量子点单元、绿色量子点单元及蓝色量子点单元分别对应形成于所述红色像素槽、绿色像素槽及蓝色像素槽中；
其中，所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌；
其中，所述光提取层的材料为氧化钛或氧化锌；
其中，所述水氧阻隔层的材料为氮化硅或氧化硅。
本发明的有益效果：本发明的OLED显示器，包括由下至上依次设置的TFT基板、WOLED层、水氧阻隔层、彩色滤光层、光提取层、及封装盖板，其中所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元，本发明通过在彩色滤光层中设置透明隔离柱，以使WOLED层发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层上方加入水氧阻隔层和光提取层，提高了WOLED 器件的寿命和出光效率。本发明的OLED显示器的制作方法，通过在彩色滤光层中设置透明隔离柱，以使WOLED层发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层上方加入水氧阻隔层和光提取层，提高了WOLED器件的寿命和出光效率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的OLED显示器的制作方法的流程示意图；
图2为本发明的OLED显示器的制作方法的步骤S1的示意图；
图3为本发明的OLED显示器的制作方法的步骤S2的示意图；
图4为本发明的OLED显示器的制作方法的步骤S3的示意图；
图5为本发明的OLED显示器的制作方法的步骤S4的示意图暨本发明的OLED显示器的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图5，本发明提供一种OLED显示器，包括TFT基板10、设于所述TFT基板10上WOLED层20、设于所述WOLED层20上的水氧阻隔层30、设于所述水氧阻隔层30上的彩色滤光层40、设于所述彩色滤光层40上的光提取层50及设于所述光提取层50上方的封装盖板60；
其中，所述彩色滤光层40包括数个透明隔离柱41、数个红色量子点单元42、数个绿色量子点单元43及数个蓝色量子点单元44；所述透明隔离柱41在所述水氧阻隔层30上围出数个红色像素槽412、数个绿色像素槽413及数个蓝色像素槽414，所述红色量子点单元42、绿色量子点单元43及蓝色量子点单元44分别对应形成于所述红色像素槽412、绿色像素槽413及蓝色像素槽414中。
具体地，所述透明隔离柱41的材料优选为光透过率高、与量子点油墨亲和性较好的材料，进一步地，所述透明隔离柱41的材料为氮化硅(SiNx)、氧化硅(SiOx)、氧化钛(TiO2)或氧化锌(ZnO)。
具体地，所述光提取层50的材料优选为阻隔水氧性较好的无机材料，进一步地，所述光提取层50的材料为氧化钛或氧化锌。
具体地，所述水氧阻隔层30用于阻隔水氧对WOLED层20的侵蚀，所述水氧阻隔层30的材料为氮化硅或氧化硅。
具体地，所述WOLED层20包括像素定义层(未图示)及由像素定义层间隔开的数个WOLED器件(未图示)。
本发明的OLED显示器，通过在彩色滤光层40中设置透明隔离柱41，以使WOLED层20发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层40中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层20上方加入水氧阻隔层30和光提取层50，提高了WOLED器件的寿命进和出光效率。
基于上述的OLED显示器，请参阅图1，本发明还提供一种OLED显示器的制作方法，包括以下步骤：
步骤S1、如图2所示，提供一TFT基板10，在所述TFT基板10上形成WOLED层20，在所述WOLED层20上形成水氧阻隔层30。
具体地，所述水氧阻隔层30用于阻隔水氧对WOLED层20的侵蚀，所述水氧阻隔层30的材料为氮化硅或氧化硅。
具体地，所述步骤S1中，采用物理气相沉积(Physical Vapor Deposition，PVD)、化学气相沉积(Chemical vapor deposition，CVD)、原子层沉积(Atomic Layer Deposition，ALD)、或蒸镀的方式形成所述水氧阻隔层30。
具体地，所述WOLED层20包括像素定义层及由像素定义层间隔开的数个WOLED器件。
步骤S2、如图3所示，在所述水氧阻隔层30上沉积并图案化形成数个透明隔离柱41，该数个透明隔离柱41在所述水氧阻隔层30上方围出数个红色像素槽412、数个绿色像素槽413及数个蓝色像素槽414。
具体地，所述透明隔离柱41的材料优选为光透过率高、与量子点油墨亲和性较好的材料，进一步地，所述透明隔离柱41的材料为氮化硅(SiNx)、氧化硅(SiOx)、氧化钛(TiO2)或氧化锌(ZnO)。
具体地，所述步骤S2中，采用物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式沉积形成所述透明隔离柱41。
步骤S3、如图4所示，提供红色量子点油墨、绿色量子点油墨及蓝色量子点油墨，采用喷墨打印的方式将红色量子点油墨、绿色量子点油墨及蓝色量子点油墨分别打印在所述数个红色像素槽412、数个绿色像素槽413及数个蓝色像素槽414中，再经过烘烤、干燥，分别对应形成图形化的数个红色量子点单元42、数个绿色量子点单元43及数个蓝色量子点单元44；从而得到包括数个透明隔离柱41、数个红色量子点单元42、数个绿色量子点单元43及数个蓝色量子点单元44的彩色滤光层40。
步骤S4、如图5所示，在所述彩色滤光层40上形成光提取层50，在所述光提取层50上覆盖封装盖板60，对OLED显示器进行封装，从而完成OLED显示器的制作。
具体地，所述光提取层50的材料优选阻隔水氧性较好的无机材料，进一步地，所述光提取层50的材料为氧化钛或氧化锌。
所述步骤S4中，采用旋涂、物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式形成所述光提取层50。
综上所述，本发明的OLED显示器，包括由下至上依次设置的TFT基板、WOLED层、水氧阻隔层、彩色滤光层、光提取层、及封装盖板，其中所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元，本发明通过在彩色滤光层中设置透明隔离柱，以使WOLED层发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层上方加入水氧阻隔层和光提取层，提高了WOLED器件的寿命和出光效率。本发明的OLED显示器的制作方法，通过在彩色滤光层中设置透明隔离柱，以使WOLED层发出的白光透过并进行显示而构成了白色像素点，从而实现了RGBW四像素显示，可以有效提高OLED显示器的亮度，并通过在彩色滤光层中引入量子点，大大提高了OLED显示器的色域，又通过在WOLED层上方加入水氧阻隔层和光提取层，提高了WOLED器件的寿命和出光效率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (9)

  1. 一种OLED显示器，包括TFT基板、设于所述TFT基板上WOLED层、设于所述WOLED层上的水氧阻隔层、设于所述水氧阻隔层上的彩色滤光层、设于所述彩色滤光层上的光提取层及设于所述光提取层上方的封装盖板；
    其中，所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；所述透明隔离柱在所述水氧阻隔层上围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽，所述红色量子点单元、绿色量子点单元及蓝色量子点单元分别对应形成于所述红色像素槽、绿色像素槽及蓝色像素槽中。
  2. 如权利要求1所述的OLED显示器，其中，所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌。
  3. 如权利要求1所述的OLED显示器，其中，所述光提取层的材料为氧化钛或氧化锌。
  4. 如权利要求1所述的OLED显示器，其中，所述水氧阻隔层的材料为氮化硅或氧化硅。
  5. 一种OLED显示器的制作方法，包括以下步骤：
    步骤S1、提供一TFT基板，在所述TFT基板上形成WOLED层，在所述WOLED层上形成水氧阻隔层；
    步骤S2、在所述水氧阻隔层上沉积并图案化形成数个透明隔离柱，该数个透明隔离柱在所述水氧阻隔层上方围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽；
    步骤S3、提供红色量子点油墨、绿色量子点油墨及蓝色量子点油墨，采用喷墨打印的方式将红色量子点油墨、绿色量子点油墨及蓝色量子点油墨分别涂布在所述数个红色像素槽、数个绿色像素槽及数个蓝色像素槽中，分别形成图形化的数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；从而得到包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元的彩色滤光层；
    步骤S4、在所述彩色滤光层上形成光提取层，在所述光提取层上覆盖封装盖板，完成OLED显示器的制作。
  6. 如权利要求5所述的OLED显示器的制作方法，其中，所述步骤S2中，采用物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式沉 积形成所述透明隔离柱，所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌。
  7. 如权利要求5所述的OLED显示器的制作方法，其中，所述步骤S4中，采用旋涂、物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式形成所述光提取层，所述光提取层的材料为氧化钛或氧化锌。
  8. 如权利要求5所述的OLED显示器的制作方法，其中，所述步骤S1中，采用物理气相沉积、化学气相沉积、原子层沉积、或蒸镀的方式形成所述水氧阻隔层，所述水氧阻隔层的材料为氮化硅或氧化硅。
  9. 一种OLED显示器，包括TFT基板、设于所述TFT基板上WOLED层、设于所述WOLED层上的水氧阻隔层、设于所述水氧阻隔层上的彩色滤光层、设于所述彩色滤光层上的光提取层及设于所述光提取层上方的封装盖板；
    其中，所述彩色滤光层包括数个透明隔离柱、数个红色量子点单元、数个绿色量子点单元及数个蓝色量子点单元；所述透明隔离柱在所述水氧阻隔层上围出数个红色像素槽、数个绿色像素槽及数个蓝色像素槽，所述红色量子点单元、绿色量子点单元及蓝色量子点单元分别对应形成于所述红色像素槽、绿色像素槽及蓝色像素槽中；
    其中，所述透明隔离柱的材料为氮化硅、氧化硅、氧化钛或氧化锌；
    其中，所述光提取层的材料为氧化钛或氧化锌；
    其中，所述水氧阻隔层的材料为氮化硅或氧化硅。
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CN105278150A (zh) * 2015-11-05 2016-01-27 深圳市华星光电技术有限公司 量子点彩膜基板及其制作方法与液晶显示装置
CN105242448A (zh) * 2015-11-11 2016-01-13 深圳市华星光电技术有限公司 彩色滤光基板的制作方法及彩色滤光基板

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CN113394259A (zh) * 2021-06-11 2021-09-14 南京昀光科技有限公司 硅基显示面板的制备方法、硅基显示面板及显示装置

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