WO2019214125A1 - 彩色滤光基板及其制作方法与woled显示器 - Google Patents

彩色滤光基板及其制作方法与woled显示器 Download PDF

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Publication number
WO2019214125A1
WO2019214125A1 PCT/CN2018/105655 CN2018105655W WO2019214125A1 WO 2019214125 A1 WO2019214125 A1 WO 2019214125A1 CN 2018105655 W CN2018105655 W CN 2018105655W WO 2019214125 A1 WO2019214125 A1 WO 2019214125A1
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Prior art keywords
layer
substrate
quantum dot
filter
pixel defining
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PCT/CN2018/105655
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English (en)
French (fr)
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黄辉
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深圳市华星光电技术有限公司
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Priority to US16/307,136 priority Critical patent/US11024679B2/en
Publication of WO2019214125A1 publication Critical patent/WO2019214125A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color filter substrate, a method for fabricating the same, and a WOLED display.
  • OLED Organic Light-Emitting Diode
  • OLED Organic Light-Emitting Diode
  • OLED organic electroluminescent display
  • the temperature adapts to a wide range, the volume is light, the response speed is fast, and the color display and the large screen display are easy to realize, the realization is compatible with the integrated circuit driver, and the flexible display is easy to realize, and thus has broad application prospects.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor (TFT).
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • TFT thin film transistor
  • matrix addressing There are two types of matrix addressing.
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display.
  • the OLED generally includes a substrate, an anode disposed on the substrate, a Hole Inject Layer (HIL) disposed on the anode, and a Hole Transport Layer (HTL) disposed on the hole injection layer.
  • HIL Hole Inject Layer
  • HTL Hole Transport Layer
  • a light-emitting layer provided on the hole transport layer
  • ETL electron transport layer
  • EIL electron injection layer
  • EIL electron set Inject the cathode on the layer.
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED display device generally uses an indium tin oxide pixel electrode and a metal electrode as anodes and cathodes of the device, respectively. Under a certain voltage, electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively. The electrons and holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the existing OLED display often adopts a structure of a white OLED (WOLED) substrate and a color filter substrate (CF).
  • the color filter substrate is provided with a plurality of red, green and blue resistance units, and the white light emitted by the WOLED substrate passes through red, green and blue. After the blocking unit filters, corresponding color light is emitted to realize color display of the WOLED display.
  • the color resisting unit in the manufacturing method of the common color filter substrate is fabricated by an evaporation process, and needs to be completed by multiple photolithography processes, and the process is complicated.
  • the object of the present invention is to provide a color filter substrate, which is simple in manufacturing method, and can be applied to a WOLED display to improve the luminous efficiency and color gamut of the WOLED display and improve product quality.
  • Another object of the present invention is to provide a method for fabricating a color filter substrate, which is simple in operation, and the obtained color filter substrate is applied to a WOLED display to improve the luminous efficiency and color gamut of the WOLED display and improve product quality.
  • the present invention first provides a color filter substrate comprising:
  • a substrate a plurality of sub-pixel regions are disposed on the substrate;
  • a pixel defining layer disposed on the substrate; a plurality of openings corresponding to the plurality of sub-pixel regions on the pixel defining layer;
  • each of the filter patterns includes a quantum dot layer and a filter layer disposed on the substrate in sequence; the quantum dots
  • the layer includes quantum dot material.
  • the color filter substrate further includes a package film disposed on the substrate and covering the pixel defining layer and the filter pattern.
  • Each of the filter patterns further includes a first anchor layer disposed between the quantum dot layer and the substrate and a second anchor layer disposed between the filter layer and the quantum dot layer.
  • the materials of the first anchor layer and the second anchor layer each comprise a dilute acid
  • the material of the pixel defining layer is a photoresist.
  • the quantum dot layer and the filter layer are each formed in the opening of the pixel defining layer by solution film formation.
  • the invention also provides a method for manufacturing a color filter substrate, comprising:
  • the substrate is provided with a plurality of sub-pixel regions;
  • the pixel defining layer is provided with a plurality of openings corresponding to the plurality of sub-pixel regions;
  • the quantum dot layer comprises a quantum dot material
  • a plurality of filter layers are formed on the plurality of quantum dot layers in a plurality of openings of the pixel defining layer by solution film formation to obtain a plurality of filter patterns.
  • the filter pattern is also dried and baked after the plurality of filter patterns are prepared.
  • the materials of the first anchor layer and the second anchor layer each comprise a dilute acid.
  • the solution is formed into a film by inkjet printing or coating.
  • the present invention also provides a WOLED display comprising the above color filter substrate.
  • the color filter substrate provided by the present invention includes a substrate, a pixel defining layer and a plurality of filter patterns.
  • the pixel defining layer is provided with a plurality of openings corresponding to the plurality of sub-pixel regions, and the plurality of filter patterns are disposed on the pixels.
  • a plurality of openings defining the layer are disposed on the substrate, and each of the filter patterns includes a quantum dot layer and a filter layer disposed in sequence on the substrate.
  • the color filter substrate of the present invention only needs to perform a photolithography process to make an opening, and the quantum dot layer and the filter layer of the filter pattern can be formed in the opening by solution film formation, which is effective.
  • the invention simplifies the process and improves the production efficiency, and the application of the color filter substrate to the WOLED display can effectively improve the luminous efficiency and color gamut of the WOLED display and improve the quality of the product.
  • the method for fabricating the color filter substrate provided by the invention is simple in operation, and the obtained color filter substrate is applied to the WOLED display to improve the luminous efficiency and color gamut of the WOLED display and improve the product quality.
  • the WOLED display provided by the invention has high luminous efficiency and wide color gamut.
  • FIG. 1 is a schematic structural view of a color filter substrate of the present invention
  • FIG. 2 is a flow chart of a method of fabricating a color filter substrate of the present invention
  • FIG. 3 is a schematic view showing steps S1 and S2 of the method for fabricating a color filter substrate of the present invention
  • FIG. 4 is a schematic view showing a step S3 of the method for fabricating a color filter substrate of the present invention
  • FIG. 5 is a schematic view showing a step S4 of the method of fabricating the color filter substrate of the present invention.
  • a color filter substrate provided by the present invention includes a substrate 10 , a pixel defining layer 20 , a plurality of filter patterns 30 , and a package film 40 .
  • a plurality of sub-pixel regions 11 are provided on the substrate 10.
  • the pixel defining layer 20 is disposed on the substrate 10, and a plurality of openings 21 are disposed on the pixel defining layer 20 corresponding to the plurality of sub-pixel regions 11.
  • the plurality of filter patterns 30 are disposed on the substrate 10 within the plurality of openings 21 of the pixel defining layer 20.
  • Each of the filter patterns 30 includes a quantum dot layer 31 and a filter layer 32 which are sequentially disposed on the substrate 10.
  • the quantum dot layer 31 includes a quantum dot material.
  • the package film 40 is disposed on the substrate 10 and covers the pixel defining layer 20 and the filter pattern 30.
  • the substrate 10 is made of a transparent material, and may be made of, for example, glass.
  • the quantum dot layer 31 and the filter layer 32 are both formed in the opening 21 of the pixel defining layer 20 by solution film formation.
  • the solution is formed into a film by inkjet printing or coating.
  • the sub-pixel region 11 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region
  • the quantum dot layer 31 of the filter pattern 30 located in the opening 21 corresponding to the red sub-pixel region has an excitable
  • the red light quantum dot material and the filter layer 32 can filter the white light to emit red light
  • the quantum dot layer 31 of the filter pattern 30 located in the opening 21 corresponding to the green sub-pixel region has a quantum dot material capable of exciting green light.
  • the filter layer 32 can filter white light to emit green light, and the quantum dot layer 31 of the filter pattern 30 located in the opening 21 corresponding to the blue sub-pixel region has a quantum dot material capable of exciting blue light, and the filter layer 32 can The white light is filtered to emit blue light.
  • the quantum dot material may be selected from quantum dot materials commonly used in the prior art, and is preferably a metal oxide such as cadmium sulfide (CdS) or the like.
  • each of the filter patterns 30 further includes a first anchor layer 33 disposed between the quantum dot layer 31 and the substrate 10 and disposed between the filter layer 32 and the quantum dot layer 31 .
  • the second anchor layer 34 the materials of the first anchor layer 33 and the second anchor layer 34 all include a dilute acid, which is a mineral acid, such as hydrochloric acid, etc., because the dilute acid has hydrogen ions, the first anchor layer
  • the hydrogen ions in 33 anchor the quantum dot layer 31 and the substrate 10 to improve the bonding ability of the two
  • the hydrogen ions in the second anchor layer 34 anchor the quantum dot layer 31 and the filter layer 32. Improve the bonding ability of both.
  • the material of the pixel defining layer 20 is a photoresist, so that the pixel defining layer 20 having the opening 21 can be obtained by directly exposing and developing a layer of the photoresist layer.
  • the opening 21 has a depth of 1 mm to 5 mm.
  • the encapsulation film 40 has a thickness of 1 mm to 5 mm.
  • the material of the package film 40 is silicon oxide or silicon nitride.
  • the pixel defining layer 20 is disposed on the substrate 10, and the sub-pixel region 11 on the corresponding substrate 10 on the pixel defining layer 20 is provided with the opening 21 penetrating the pixel defining layer 20. Therefore, a plurality of filter patterns 30 corresponding to the sub-pixel regions 11 can be formed by sequentially providing the quantum dot layer 31 and the filter layer 32 in the opening 21, and only one of the openings on the pixel defining layer 20 needs to be made at the time of fabrication.
  • the photolithography process of 21 can be used, and the subsequently formed filter pattern 30 can be formed by solution film formation. Compared with the prior art, a color filter substrate manufactured by using multiple photolithography processes is required, and the invention can be effective.
  • the process is simplified, and the production efficiency is improved.
  • the side of the color filter substrate having the filter pattern 30 is opposite to the side of the WOLED substrate having the WOLED layer, so that the WOLED is
  • the white light emitted by the layer can be filtered through the filter film 32 and then filtered by the filter layer 32 to generate light of a corresponding color until the quantum dot layer 31 excites the quantum dot material to emit light of high color purity, thereby
  • the luminous efficiency and color gamut of the WOLED display are improved, and the quality of the product is improved.
  • the encapsulating film 40 it is possible to block the external water and oxygen from entering the filter pattern 30, so that the color filter substrate can be stored for a long period of time, and the reliability is high, and the transmittance of the encapsulating film 40 is high, and it is not correct. Light extraction efficiency has an impact.
  • the present invention further provides a method for fabricating the above color filter substrate, comprising the following steps:
  • Step S1 Referring to Figure 3, a substrate 10 is provided. A plurality of sub-pixel regions 11 are provided on the substrate 10.
  • the substrate 10 is made of a transparent material, and may be made of, for example, glass.
  • the sub-pixel region 11 includes a red sub-pixel region, a green sub-pixel region, and a blue sub-pixel region.
  • Step S2 referring to FIG. 3, a photoresist is coated on the substrate 10 and an exposure and development process is performed to form a pixel defining layer 20 on the substrate 10.
  • a plurality of openings 21 are provided on the pixel defining layer 20 corresponding to the plurality of sub-pixel regions 11.
  • the opening 21 has a depth of 1 mm to 5 mm.
  • Step S3 referring to FIG. 4, a plurality of quantum dot layers 31 are formed in the plurality of openings 21 of the pixel defining layer 20 by solution film formation.
  • the quantum dot layer 31 includes a quantum dot material.
  • the manner in which the solution in the step S3 is formed into a film is inkjet printing or coating.
  • the quantum dot layer 31 located in the opening 21 corresponding to the red sub-pixel region has a quantum dot material that can excite red light
  • the quantum dot layer 31 located in the opening 21 corresponding to the green sub-pixel region has an excitable green light.
  • the quantum dot material, the quantum dot layer 31 located in the opening 21 corresponding to the blue sub-pixel region, has a quantum dot material that can excite blue light.
  • the quantum dot material may be selected from quantum dot materials commonly used in the prior art, and is preferably a metal oxide such as cadmium sulfide.
  • the first anchor layer is also formed in the plurality of openings 21 of the pixel defining layer 20 before the plurality of quantum dot layers 31 are formed in the plurality of openings 21 of the pixel defining layer 20 33.
  • the material of the first anchor layer 33 comprises a dilute acid
  • the dilute acid is a mineral acid, such as hydrochloric acid, etc.
  • the dilute acid solution is formed into a film by solution forming.
  • the hydrogen ions in the first anchor layer 33 anchor the quantum dot layer 31 and the substrate 10 to improve the bonding ability of both.
  • Step S4 referring to FIG. 5, a plurality of filter layers 32 are formed on the plurality of quantum dot layers 31 in the plurality of openings 21 of the pixel defining layer 20 by solution film formation, and a plurality of filter patterns are prepared. 30.
  • the manner in which the solution in the step S4 is formed into a film is inkjet printing or coating.
  • the filter layer 32 located in the opening 21 corresponding to the red sub-pixel region can filter white light to emit red light
  • the filter layer 32 located in the opening 21 corresponding to the green sub-pixel region can filter and emit white light.
  • the green light, the filter layer 32 located in the opening 21 corresponding to the blue sub-pixel region, is capable of filtering white light to emit blue light.
  • a plurality of openings of the pixel defining layer 20 are also formed before the plurality of filter layers 32 are formed on the plurality of quantum dot layers 31 in the plurality of openings 21 of the pixel defining layer 20.
  • a second anchor layer 34 is formed on the plurality of quantum dot layers 31 in 21 .
  • the material of the second anchor layer 34 comprises a dilute acid
  • the dilute acid is a mineral acid, such as hydrochloric acid, etc.
  • the dilute acid solution is formed into a film by solution forming.
  • the hydrogen ions in the second anchor layer 34 anchor the quantum dot layer 31 and the filter layer 32 to improve the bonding ability of both.
  • a step of drying and baking the filter pattern 30 is further provided to cure the filter pattern 30.
  • Step S5 referring to FIG. 1, a package film 40 covering the pixel defining layer 20 and the filter pattern 30 is formed on the substrate 10.
  • the method for fabricating the color filter substrate of the present invention only needs to perform a photolithography process for forming the opening 21 on the pixel defining layer 20, and the formed filter pattern 30 can be formed by solution film formation.
  • a color filter substrate manufactured by using a multi-pass lithography process is required, and the invention can effectively simplify the process and improve the production efficiency, and the color filter substrate prepared by the invention is applied to the WOLED display.
  • the side of the color filter substrate having the filter pattern 30 is opposite to the side of the WOLED substrate having the WOLED layer, so that the white light emitted by the WOLED layer can first pass through the package film 40 and then be filtered by the filter layer 32.
  • the light of the corresponding color is generated to the quantum dot layer 31 to excite the quantum dot material to emit light of high color purity, thereby improving the luminous efficiency and color gamut of the WOLED display and improving the quality of the product.
  • the encapsulating film 40 it is possible to block the external water and oxygen from entering the filter pattern 30, so that the color filter substrate can be stored for a long period of time, and the reliability is high, and the transmittance of the encapsulating film 40 is high, and it is not correct. Light extraction efficiency has an impact.
  • the present invention further provides a WOLED display comprising the above-mentioned color filter substrate, and further comprising a WOLED substrate and an encapsulant (for example, an ultraviolet curing adhesive) connecting the WOLED substrate and the color filter substrate.
  • the WOLED substrate adopts the structure of the WOLED substrate in the existing WOLED display, and includes an array substrate and a WOLED layer disposed on the array substrate. The side of the WOLED substrate provided with the WOLED layer and the color filter substrate are provided with the filter pattern 30.
  • the array substrate of the WOLED layer is connected to the substrate of the color filter substrate, so that the package film 40 does not affect the process of bonding the WOLED substrate and the color filter substrate with the package adhesive.
  • the WOLED display of the present invention can perform color display by applying the color filter substrate described above, and has a simple manufacturing method, high luminous efficiency, wide color gamut, and high product quality.
  • the color filter substrate of the present invention includes a substrate, a pixel defining layer, and a plurality of filter patterns.
  • the pixel defining layer has a plurality of openings corresponding to the plurality of sub-pixel regions, and the plurality of filter patterns are defined in the pixel defining layer.
  • the plurality of openings are disposed on the substrate, and each of the filter patterns includes a quantum dot layer and a filter layer disposed on the substrate in sequence.
  • the color filter substrate of the present invention only needs to perform a photolithography process to make an opening, and the quantum dot layer and the filter layer of the filter pattern can be formed in the opening by solution film formation, which is effective.
  • the invention simplifies the process and improves the production efficiency, and the application of the color filter substrate to the WOLED display can effectively improve the luminous efficiency and color gamut of the WOLED display and improve the quality of the product.
  • the method for fabricating the color filter substrate of the invention is simple in operation, and the obtained color filter substrate is applied to the WOLED display to improve the luminous efficiency and color gamut of the WOLED display and improve the product quality.
  • the WOLED display of the present invention has high luminous efficiency and wide color gamut.

Abstract

一种彩色滤光基板及其制作方法与WOLED显示器。彩色滤光基板包括衬底(10)、像素定义层(20)及多个滤光图案(30),像素定义层(20)上对应多个子像素区(11)设有多个开口(21),多个滤光图案(30)于像素定义层(20)的多个开口(21)内设置在衬底(10)上,每一滤光图案(30)均包括于衬底(10)上依次设置的量子点层(31)及滤光层(33)。彩色滤光基板在进行制作时仅需要进行一道光刻制程以制作开口(21)即可,而滤光图案(30)的量子点层(31)及滤光层(33)均可通过溶液成膜的方式制作在开口(21)中,有效地简化了制程,提升生产效率,且将该彩色滤光基板应用于WOLED显示器能够有效提高WOLED显示器的发光效率及色域,提升产品的品质。

Description

彩色滤光基板及其制作方法与WOLED显示器 技术领域
本发明涉及显示技术领域,尤其涉及一种彩色滤光基板及其制作方法与WOLED显示器。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)显示器,也称为有机电致发光显示器,是一种新兴的平板显示器,由于其具有制备工艺简单、成本低、功耗低、发光亮度高、工作温度适应范围广、体积轻薄、响应速度快,而且易于实现彩色显示和大屏幕显示、易于实现和集成电路驱动器相匹配、易于实现柔性显示等优点,因而具有广阔的应用前景。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED,PMOLED)和有源矩阵型OLED(Active Matrix OLED,AMOLED)两大类,即直接寻址和薄膜晶体管(Thin Film Transistor,TFT)矩阵寻址两类。其中,AMOLED具有呈阵列式排布的像素,属于主动显示类型,发光效能高,通常用作高清晰度的大尺寸显示器。
OLED通常包括:基板、设于基板上的阳极、设于阳极上的空穴注入层(Hole Inject Layer,HIL)、设于空穴注入层上的空穴传输层(Hole Transport Layer,HTL)、设于空穴传输层上的发光层、设于发光层上的电子传输层(Electron Transport Layer,ETL)、设于电子传输层上的电子注入层(Electron Inject Layer,EIL)、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下,通过载流子注入和复合导致发光。具体的,OLED显示器件通常采用氧化铟锡像素电极和金属电极分别作为器件的阳极和阴极,在一定电压驱动下,电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层,电子和空穴分别经过电子传输层和空穴传输层迁移到发光层,并在发光层中相遇,形成激子并使发光分子激发,后者经过辐射弛豫而发出可见光。
现有的OLED显示器常会采用白光OLED(WOLED)基板搭配彩色滤光基板(CF)的结构,彩色滤光基板上设有多个红绿蓝色阻单元,WOLED基板发出的白光经红绿蓝色阻单元滤光后产生对应的色光射出,以实现WOLED显示器的彩色显示。常见的彩色滤光基板的制作方法中的色阻单元利用蒸镀工艺制作,需要经过多次光刻工艺才能完成,制程复杂。而采用 例如喷墨打印等非蒸镀工艺制作色阻单元的工艺尚不成熟,且在应用于高分辨率的WOLED显示器时,由于高分辨率的WOLED显示器像素排列紧密,制备时容易出现混色的现象,影响产品的品质。
发明内容
本发明的目的在于提供一种彩色滤光基板,其制作方法简单,应用于WOLED显示器中能够提升WOLED显示器发光效率及色域,提升产品质量。
本发明的另一目的在于提供一种彩色滤光基板的制作方法,操作简单,制得的彩色滤光基板应用于WOLED显示器中能够提升WOLED显示器发光效率及色域,提升产品质量。
本发明的又一目的在于提供一种WOLED显示器,发光效率高,色域广。
为实现上述目的,本发明首先提供一种彩色滤光基板,包括:
衬底;所述衬底上设有多个子像素区;
设于所述衬底上的像素定义层;所述像素定义层上对应多个子像素区设有多个开口;
以及于所述像素定义层的多个开口内设置在衬底上的多个滤光图案;每一滤光图案均包括于衬底上依次设置的量子点层及滤光层;所述量子点层包括量子点材料。
所述彩色滤光基板还包括设于所述衬底上且覆盖像素定义层及滤光图案的封装薄膜。
每一滤光图案还包括设于量子点层与衬底之间的第一锚定层以及设于滤光层与量子点层之间的第二锚定层。
所述第一锚定层及第二锚定层的材料均包括稀酸;
所述像素定义层的材料为光刻胶。
所述量子点层及滤光层均通过溶液成膜的方式制作在像素定义层的开口内。
本发明还提供一种彩色滤光基板的制作方法,包括:
提供衬底;所述衬底上设有多个子像素区;
在所述衬底上涂布光刻胶并进行曝光显影制程,在所述衬底上形成像素定义层;所述像素定义层上对应多个子像素区设有多个开口;
采用溶液成膜的方式在所述像素定义层的多个开口内制作多个量子点层;所述量子点层包括量子点材料;
采用溶液成膜的方式在所述像素定义层的多个开口内于多个量子点层上制作多个滤光层,制得多个滤光图案。
在制得多个滤光图案以后还在所述衬底上形成覆盖像素定义层及滤光图案的封装薄膜;
在所述像素定义层的多个开口内制作多个量子点层之前还在所述像素定义层的多个开口内制作第一锚定层;
在所述像素定义层的多个开口内于多个量子点层上制作多个滤光层之前还在所述像素定义层的多个开口内于多个量子点层上制作第二锚定层;
在制得多个滤光图案后还对滤光图案进行干燥及烘烤。
所述第一锚定层及第二锚定层的材料均包括稀酸。
所述溶液成膜的方式为喷墨打印或涂布。
本发明还提供一种WOLED显示器,包括上述彩色滤光基板。
本发明的有益效果:本发明提供的彩色滤光基板包括衬底、像素定义层及多个滤光图案,像素定义层上对应多个子像素区设有多个开口,多个滤光图案于像素定义层的多个开口内设置在衬底上,每一滤光图案均包括于衬底上依次设置的量子点层及滤光层。本发明的彩色滤光基板在进行制作时仅需要进行一道光刻制程以制作开口即可,而滤光图案的量子点层及滤光层均可通过溶液成膜的方式制作在开口中,有效地简化了制程,提升生产效率,且将该彩色滤光基板应用于WOLED显示器能够有效提高WOLED显示器的发光效率及色域,提升产品的品质。本发明提供的彩色滤光基板的制作方法操作简单,制得的彩色滤光基板应用于WOLED显示器中能够提升WOLED显示器发光效率及色域,提升产品质量。本发明提供的WOLED显示器的发光效率高且色域广。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为本发明的彩色滤光基板的结构示意图;
图2为本发明的彩色滤光基板的制作方法的流程图;
图3为本发明的彩色滤光基板的制作方法的步骤S1及步骤S2的示意图;
图4为本发明的彩色滤光基板的制作方法的步骤S3的示意图;
图5为本发明的彩色滤光基板的制作方法的步骤S4的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1,本发明提供的彩色滤光基板包括衬底10、像素定义层20、多个滤光图案30及封装薄膜40。
所述衬底10上设有多个子像素区11。所述像素定义层20设于所述衬底10上,且像素定义层20上对应多个子像素区11设有多个开口21。所述多个滤光图案30于所述像素定义层20的多个开口21内设置在衬底10上。每一滤光图案30均包括于衬底10上依次设置的量子点层31及滤光层32。所述量子点层31包括量子点材料。所述封装薄膜40设于所述衬底10上且覆盖像素定义层20及滤光图案30。
具体地,所述衬底10采用透明材料制作,例如可以采用玻璃制作。
具体地,所述量子点层31及滤光层32均通过溶液成膜的方式制作在像素定义层20的开口21内。优选地,所述溶液成膜的方式为喷墨打印或涂布。
具体地,所述子像素区11包括红色子像素区、绿色子像素区及蓝色子像素区,位于与红色子像素区对应的开口21内的滤光图案30的量子点层31具有可激发红光的量子点材料而滤光层32能够对白光进行过滤射出红光,位于与绿色子像素区对应的开口21内的滤光图案30的量子点层31具有可激发绿光的量子点材料而滤光层32能够对白光进行过滤射出绿光,位于与蓝色子像素区对应的开口21内的滤光图案30的量子点层31具有可激发蓝光的量子点材料而滤光层32能够对白光进行过滤射出蓝光。
具体地,所述量子点材料选择现有技术中常用的量子点材料即可,优选为金属氧化物,例如硫化镉(CdS)等。
具体地,请参阅图1,每一滤光图案30还包括设于量子点层31与衬底10之间的第一锚定层33以及设于滤光层32与量子点层31之间的第二锚定层34。进一步地,所述第一锚定层33及第二锚定层34的材料均包括稀酸,所述稀酸为无机酸,例如盐酸等,由于稀酸中具有氢离子,第一锚定层33中的氢离子将量子点层31与衬底10进行锚定从而提高两者的键合能力,第二锚定层34中的氢离子将量子点层31与滤光层32进行锚定从而提高两者的键合能力。
具体地,所述像素定义层20的材料为光刻胶,从而可通过对一层光刻 胶层直接进行曝光显影即可得到具有开口21的像素定义层20。
优选地,所述开口21的深度为1mm-5mm。
优选地,所述封装薄膜40的厚度为1mm-5mm。
具体地,所述封装薄膜40的材料为氧化硅或氮化硅。
需要说明的是,本发明的彩色滤光基板,在衬底10上设置像素定义层20,并且像素定义层20上对应衬底10上的子像素区11设有贯穿像素定义层20的开口21,从而在开口21内依次设置量子点层31及滤光层32即可形成多个与子像素区11对应的滤光图案30,其在制作时仅需要进行一道在像素定义层20上制作开口21的光刻制程即可,而后续形成的滤光图案30可采用溶液成膜的方式制作,相比于现有技术需要采用多道光刻制程制作的彩色滤光基板,本发明能够有效的简化制程,有利于提高生产效率,当本发明的彩色滤光基板应用于WOLED显示器时,将该彩色滤光基板具有滤光图案30的一侧与WOLED基板具有WOLED层的一侧相对,使WOLED层发出的白光能够先透过封装薄膜40后经过滤光层32进行滤光而产生对应颜色的光线至量子点层31对量子点材料进行激发而发出高色纯度的光线,从而使WOLED显示器的发光效率及色域得到提升,提升产品的品质。与此同时,通过设置封装薄膜40,能够阻隔外部水氧侵入滤光图案30,使该彩色滤光基板能够长期保存,可靠性较高,且封装薄膜40的透过率较高,不会对出光效率产生影响。
请参阅图2,基于同一发明构思,本发明还提供一种上述彩色滤光基板的制作方法,包括如下步骤:
步骤S1、请参阅图3,提供衬底10。所述衬底10上设有多个子像素区11。
具体地,所述衬底10采用透明材料制作,例如可以采用玻璃制作。
具体地,所述子像素区11包括红色子像素区、绿色子像素区及蓝色子像素区。
步骤S2、请参阅图3,在所述衬底10上涂布光刻胶并进行曝光显影制程,在所述衬底10上形成像素定义层20。所述像素定义层20上对应多个子像素区11设有多个开口21。
优选地,所述开口21的深度为1mm-5mm。
步骤S3、请参阅图4,采用溶液成膜的方式在所述像素定义层20的多个开口21内制作多个量子点层31。所述量子点层31包括量子点材料。
具体地,所述步骤S3中的溶液成膜的方式为喷墨打印或涂布。
具体地,位于与红色子像素区对应的开口21内的量子点层31具有可 激发红光的量子点材料,位于与绿色子像素区对应的开口21内的量子点层31具有可激发绿光的量子点材料,位于与蓝色子像素区对应的开口21内的量子点层31具有可激发蓝光的量子点材料。
具体地,所述量子点材料选择现有技术中常用的量子点材料即可,优选为金属氧化物,例如硫化镉等。
具体地,所述步骤S3中,在所述像素定义层20的多个开口21内制作多个量子点层31之前还在所述像素定义层20的多个开口21内制作第一锚定层33。
优选地,所述第一锚定层33的材料包括稀酸,所述稀酸为无机酸,例如盐酸等,制作第一锚定层33时将稀酸溶液采用溶液成膜的方式制作在开口21中,由于稀酸中具有氢离子,第一锚定层33中的氢离子将量子点层31与衬底10进行锚定从而提高两者的键合能力。
步骤S4、请参阅图5,采用溶液成膜的方式在所述像素定义层20的多个开口21内于多个量子点层31上制作多个滤光层32,制得多个滤光图案30。
具体地,所述步骤S4中的溶液成膜的方式为喷墨打印或涂布。
具体地,位于与红色子像素区对应的开口21内的滤光层32能够对白光进行过滤射出红光,位于与绿色子像素区对应的开口21内的滤光层32能够对白光进行过滤射出绿光,位于与蓝色子像素区对应的开口21内的滤光层32能够对白光进行过滤射出蓝光。
具体地,所述步骤S4中,在所述像素定义层20的多个开口21内于多个量子点层31上制作多个滤光层32之前还在所述像素定义层20的多个开口21内于多个量子点层31上制作第二锚定层34。
优选地,所述第二锚定层34的材料包括稀酸,所述稀酸为无机酸,例如盐酸等,制作第二锚定层34时将稀酸溶液采用溶液成膜的方式制作在开口21中,由于稀酸中具有氢离子,第二锚定层34中的氢离子将量子点层31与滤光层32进行锚定从而提高两者的键合能力。
具体地,所述步骤S4结束后还设置对滤光图案30进行干燥及烘烤的步骤,以使滤光图案30固化成型。
步骤S5、请参阅图1,在所述衬底10上形成覆盖像素定义层20及滤光图案30的封装薄膜40。
需要说明的是,本发明的彩色滤光基板的制作方法仅需要进行一道在像素定义层20上制作开口21的光刻制程即可,而形成的滤光图案30可采用溶液成膜的方式制作,相比于现有技术需要采用多道光刻制程制作的彩 色滤光基板,本发明能够有效的简化制程,有利于提高生产效率,当将本发明制得的彩色滤光基板应用于WOLED显示器时,将该彩色滤光基板具有滤光图案30的一侧与WOLED基板具有WOLED层的一侧相对,使WOLED层发出的白光能够先透过封装薄膜40后经过滤光层32进行滤光而产生对应颜色的光线至量子点层31对量子点材料进行激发而发出高色纯度的光线,从而使WOLED显示器的发光效率及色域得到提升,提升产品的品质。与此同时,通过设置封装薄膜40,能够阻隔外部水氧侵入滤光图案30,使该彩色滤光基板能够长期保存,可靠性较高,且封装薄膜40的透过率较高,不会对出光效率产生影响。
基于同一发明构思,本发明还提供一种WOLED显示器,包括上述的彩色滤光基板,且还包括一WOLED基板以及将WOLED基板与彩色滤光基板连接的封装胶(例如紫外光固化胶)。WOLED基板采用现有的WOLED显示器中的WOLED基板的结构,包括阵列基板及设于阵列基板上的WOLED层,WOLED基板设有WOLED层的一侧与所述彩色滤光基板设有滤光图案30的一侧相对,封装胶位于封装薄膜40外侧将WOLED层的阵列基板与彩色滤光基板的衬底连接,因此封装薄膜40不会影响到利用封装胶贴合WOLED基板及彩色滤光基板的制程。本发明的WOLED显示器,由于应用了上述的彩色滤光基板,能够进行彩色显示,且制作方法简单,发光效率高,色域广,具有较高的产品品质。
综上所述,本发明的彩色滤光基板包括衬底、像素定义层及多个滤光图案,像素定义层上对应多个子像素区设有多个开口,多个滤光图案于像素定义层的多个开口内设置在衬底上,每一滤光图案均包括于衬底上依次设置的量子点层及滤光层。本发明的彩色滤光基板在进行制作时仅需要进行一道光刻制程以制作开口即可,而滤光图案的量子点层及滤光层均可通过溶液成膜的方式制作在开口中,有效地简化了制程,提升生产效率,且将该彩色滤光基板应用于WOLED显示器能够有效提高WOLED显示器的发光效率及色域,提升产品的品质。本发明的彩色滤光基板的制作方法操作简单,制得的彩色滤光基板应用于WOLED显示器中能够提升WOLED显示器发光效率及色域,提升产品质量。本发明的WOLED显示器的发光效率高且色域广。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (10)

  1. 一种彩色滤光基板,包括:
    衬底;所述衬底上设有多个子像素区;
    设于所述衬底上的像素定义层;所述像素定义层上对应多个子像素区设有多个开口;
    以及于所述像素定义层的多个开口内设置在衬底上的多个滤光图案;每一滤光图案均包括于衬底上依次设置的量子点层及滤光层;所述量子点层包括量子点材料。
  2. 如权利要求1所述的彩色滤光基板,还包括设于所述衬底上且覆盖像素定义层及滤光图案的封装薄膜。
  3. 如权利要求1所述的彩色滤光基板,其中,每一滤光图案还包括设于量子点层与衬底之间的第一锚定层以及设于滤光层与量子点层之间的第二锚定层。
  4. 如权利要求2所述的彩色滤光基板,其中,所述第一锚定层及第二锚定层的材料均包括稀酸;
    所述像素定义层的材料为光刻胶。
  5. 如权利要求1所述的彩色滤光基板,其中,所述量子点层及滤光层均通过溶液成膜的方式制作在像素定义层的开口内。
  6. 一种彩色滤光基板的制作方法,包括:
    提供衬底;所述衬底上设有多个子像素区;
    在所述衬底上涂布光刻胶并进行曝光显影制程,在所述衬底上形成像素定义层;所述像素定义层上对应多个子像素区设有多个开口;
    采用溶液成膜的方式在所述像素定义层的多个开口内制作多个量子点层;所述量子点层包括量子点材料;
    采用溶液成膜的方式在所述像素定义层的多个开口内于多个量子点层上制作多个滤光层,制得多个滤光图案。
  7. 如权利要求6所述彩色滤光基板的制作方法,其中,在制得多个滤光图案以后还在所述衬底上形成覆盖像素定义层及滤光图案的封装薄膜;
    在所述像素定义层的多个开口内制作多个量子点层之前还在所述像素定义层的多个开口内制作第一锚定层;
    在所述像素定义层的多个开口内于多个量子点层上制作多个滤光层之前还在所述像素定义层的多个开口内于多个量子点层上制作第二锚定层;
    在制得多个滤光图案后还对滤光图案进行干燥及烘烤。
  8. 如权利要求7所述的彩色滤光基板的制作方法,其中,所述第一锚定层及第二锚定层的材料均包括稀酸。
  9. 如权利要求6所述的彩色滤光基板的制作方法,其中,所述溶液成膜的方式为喷墨打印或涂布。
  10. 一种WOLED显示器,包括如权利要求1所述的彩色滤光基板。
PCT/CN2018/105655 2018-05-09 2018-09-14 彩色滤光基板及其制作方法与woled显示器 WO2019214125A1 (zh)

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109859644B (zh) * 2019-03-07 2020-11-24 深圳市华星光电半导体显示技术有限公司 显示面板及显示模组
CN110137166A (zh) * 2019-05-06 2019-08-16 深圳市晶台股份有限公司 一种基于喷墨技术的led滤光层构成方法
CN110136595A (zh) * 2019-05-17 2019-08-16 上海九山电子科技有限公司 一种显示面板及其制备方法、显示装置
CN110600502B (zh) * 2019-08-05 2022-04-05 深圳市华星光电半导体显示技术有限公司 有机发光显示面板及其显示装置
CN110610963A (zh) * 2019-08-20 2019-12-24 武汉华星光电半导体显示技术有限公司 子像素结构、有机发光二极管显示屏及其制造方法
CN111063709A (zh) * 2019-12-05 2020-04-24 武汉华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111430426A (zh) * 2020-04-03 2020-07-17 武汉华星光电半导体显示技术有限公司 一种显示面板及制程方法
CN111477754B (zh) * 2020-04-17 2021-08-24 Tcl华星光电技术有限公司 有机发光二极管器件及其制作方法、显示装置
CN112599575A (zh) * 2020-12-10 2021-04-02 北京维信诺科技有限公司 一种显示面板及其制备方法、显示装置
CN114264323A (zh) * 2021-12-14 2022-04-01 武汉华星光电半导体显示技术有限公司 光学传感器及显示面板

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235442A (zh) * 2013-04-22 2013-08-07 京东方科技集团股份有限公司 一种彩膜基板、显示面板及显示装置
CN103472513A (zh) * 2013-08-21 2013-12-25 京东方科技集团股份有限公司 一种彩色滤光层、彩膜基板、显示装置
CN105607344A (zh) * 2016-03-24 2016-05-25 深圳市华星光电技术有限公司 彩膜基板及其制作方法、液晶显示装置
CN106784406A (zh) * 2016-12-28 2017-05-31 深圳市华星光电技术有限公司 一种oled器件的制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105467682A (zh) * 2016-01-15 2016-04-06 京东方科技集团股份有限公司 膜层结构、其制作方法、显示基板、背光源及显示装置
KR20180073194A (ko) * 2016-12-22 2018-07-02 엘지디스플레이 주식회사 표시장치

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103235442A (zh) * 2013-04-22 2013-08-07 京东方科技集团股份有限公司 一种彩膜基板、显示面板及显示装置
CN103472513A (zh) * 2013-08-21 2013-12-25 京东方科技集团股份有限公司 一种彩色滤光层、彩膜基板、显示装置
CN105607344A (zh) * 2016-03-24 2016-05-25 深圳市华星光电技术有限公司 彩膜基板及其制作方法、液晶显示装置
CN106784406A (zh) * 2016-12-28 2017-05-31 深圳市华星光电技术有限公司 一种oled器件的制备方法

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