WO2014172951A1 - 有机电致发光二极管显示装置 - Google Patents
有机电致发光二极管显示装置 Download PDFInfo
- Publication number
- WO2014172951A1 WO2014172951A1 PCT/CN2013/076305 CN2013076305W WO2014172951A1 WO 2014172951 A1 WO2014172951 A1 WO 2014172951A1 CN 2013076305 W CN2013076305 W CN 2013076305W WO 2014172951 A1 WO2014172951 A1 WO 2014172951A1
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- WO
- WIPO (PCT)
- Prior art keywords
- light
- sub
- pixels
- display device
- emitting
- Prior art date
Links
- 239000002096 quantum dot Substances 0.000 claims abstract description 55
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000003086 colorant Substances 0.000 claims description 7
- 239000013110 organic ligand Substances 0.000 claims description 7
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910005543 GaSe Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 3
- 229910002665 PbTe Inorganic materials 0.000 claims description 3
- 229910007709 ZnTe Inorganic materials 0.000 claims description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 3
- 125000000896 monocarboxylic acid group Chemical group 0.000 claims description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 46
- 239000000758 substrate Substances 0.000 description 11
- 238000005286 illumination Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000011258 core-shell material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Definitions
- Embodiments of the present invention relate to an organic electroluminescent diode (OLED) display device.
- OLED organic electroluminescent diode
- the existing OLED display device may include a transparent substrate and a plurality of light emitting units disposed on the transparent substrate, and the light emitting unit may include an anode, a hole transport layer, a light emitting module, an electron transport layer, and a cathode; each of the light emitting units is A corresponding TFT (Thin Film Transistor) drives illumination, and each of the illumination units corresponds to one sub-pixel. Since the OLED display device has a small hierarchical structure, it can be made lighter and thinner, and the light-emitting module can significantly save power by self-illumination, so that it gradually develops and matures, and gradually occupies the display market.
- TFT Thin Film Transistor
- the RGB three-color OLED manufacturing process is relatively complicated, and it is not easy to achieve high resolution; while the white OLED adopts a structure in which an RGB color film is added on the light-emitting module, it is relatively easy to achieve high resolution, but due to RGB The color film transmittance is low, which will affect the brightness of the display device.
- the OLED using the RGBW color film increases the brightness of the display device by adding one pixel W, but this will affect the color gamut of the display device.
- Embodiments of the present invention provide an OLED display device that can achieve high resolution and improve display quality of a display device.
- An aspect of the invention provides an organic electroluminescent diode display device comprising a light emitting module and a color film layer, the color film layer comprising a plurality of sub-pixels, wherein at least one of the sub-pixels comprises a quantum dot material;
- the light emitting module includes a plurality of light emitting units corresponding to the plurality of sub-pixels on the color film layer.
- the sub-pixels have three colors of red, green, and blue;
- a sub-pixel corresponding to red on the color film layer includes a quantum dot emitting red light
- a sub-pixel corresponding to green on the color film layer includes a quantum dot emitting green light
- the color film layer corresponds to a blue color.
- the sub-pixels include quantum dots that emit blue light; the light-emitting unit in the light-emitting module emits light that excites the red-emitting quantum dots, the green-emitting quantum dots, and the blue-emitting quantum dots.
- the sub-pixels are corresponding to three colors of red, green, and blue;
- the light-emitting unit on the light-emitting module is a light-emitting unit that emits blue light;
- the corresponding red sub-pixel on the color film layer includes a quantum dot that emits red light.
- the sub-pixel corresponding to the green color on the color film layer includes a quantum dot emitting green light, and the sub-pixel corresponding to the blue color on the color film layer comprises a transparent material.
- the blue light emitting unit on the light emitting module is an organic electroluminescent diode that emits blue light.
- the quantum dot includes: a core; a shell formed outside the core; and an organic ligand formed outside the shell.
- the core of the quantum dot is one of materials ZnS, ZnO, GaN, ZnSe, CdS, ZnTe, GaSe, CdSe, CdTe, GaAs, InP, GaSb, InAs, Te, PbS, InSb, PbTe, and PbSe or A variety of mixed.
- the shell of the quantum dot is formed of any one of SiO, TiO, ZnO, SiO 2 and MgO.
- the organic ligand includes S, P, COOH, and NH4 groups.
- FIG. 1 is a schematic structural diagram of an OLED display device according to an embodiment of the present invention
- FIG. 2 is a schematic top view of a substrate on which a color film is formed according to an embodiment of the present invention
- a schematic diagram of a quantum dot structure is shown in FIG. 1 .
- One embodiment of the present invention provides an OLED display device, as shown in FIG. 1, including a transparent substrate 11, and a color film layer 12 and a light emitting module 13 disposed on the transparent substrate 11.
- the color film layer 12 includes a plurality of sub-pixels 1211, wherein at least one of the sub-pixels is formed of a quantum dot material.
- FIG. 2 is a schematic top view of a substrate on which a color film is formed.
- the color film layer 12 includes a plurality of pixel regions 121, and each of the pixel regions 121 includes three sub-pixels 1211.
- the sub-pixel regions 1211 of the three sub-pixels respectively correspond to one color, for example, red, green, and blue, respectively; at least one of the sub-pixels is formed of a quantum dot material; and the light generated by the quantum dot material is excited
- the color has the same color as the sub-pixel region; the other sub-pixel regions may be composed of a filter film of a corresponding color; the filter film described herein is a color filter film applied in the liquid crystal display panel.
- the light emitting module 13 is disposed above the color film layer 12, and includes a plurality of light emitting units 131 corresponding to the sub-pixel regions 1211 on the color film layer 12, that is, how many colors on the color film layer 12
- the sub-pixel area 1211 has a plurality of light-emitting units 131 corresponding to the light-emitting module 13 corresponding thereto.
- the light emitting units 131 each include an anode, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode.
- Each of the light-emitting units is controlled by a corresponding TFT and can emit light alone.
- the present invention is not limited to the specific configuration of the light emitting unit.
- the color film layer 12 is disposed on the substrate 11 and the light emitting module 13 is disposed on the color film layer 12, the positions of the color film layer 12 and the light emitting module 13 are interchangeable, that is, in another In one embodiment, the light emitting module 13 is disposed on the substrate 11 and the color film layer 12 is disposed on the light emitting module 13.
- the OLED display device of the embodiment of the present invention has different illumination directions in the two modes.
- each sub-pixel region is controlled by its corresponding light-emitting unit, and each light-emitting unit is correspondingly disposed above one sub-pixel region, and each light-emitting unit is independently controlled by its corresponding TFT.
- the driving light is emitted, and the luminous intensities may be different from each other. That is, the OLED can be driven in an active manner, but a passive driving method can also be employed.
- the emitted light can have different colors after passing through the pixel area in the color film, thereby enabling the OLED display
- the device can display an image.
- the method of forming a quantum dot into a color film may be as follows. One is to dissolve the quantum dot in an organic solvent, and the quantum dot is sprayed on the substrate to form a color film by spraying (similar to inkjet printing). The other is by imprinting, similar to letterpress printing, engraving quantum dots on patterned silicon wafers, without the need for solvents, and transferring the quantum dots onto the substrate to form a color film.
- An OLED display device includes a light emitting module and a color film layer. At least one sub-pixel of the color film includes a quantum dot material, and light emitted by the light emitting unit in the light emitting module can form each through the color film layer.
- the color of the light realizes high resolution, and the color film formed by the quantum dot material also emits light after being excited by the light emitting unit, which can increase the brightness of the display device, and make the image displayed by the display device perform better and live more vividly. , improving the display quality of the display device.
- each of the pixel regions includes three sub-pixel regions, and the three sub-pixel regions respectively correspond to three colors of red, green, and blue.
- all the sub-pixels in the color film layer may contain quantum dots.
- a material that is, a sub-pixel corresponding to red on the color film layer includes a quantum dot emitting red light, and a sub-pixel corresponding to green on the color film layer includes a quantum dot emitting green light, and the color film layer corresponds to a blue color
- the sub-pixels contain quantum dots that emit blue light.
- the light emitting unit in the light emitting module may emit light that excites the red light emitting quantum dot, the green light emitting quantum dot, and the blue light emitting quantum dot.
- the light emitting unit in the light emitting module may be a light emitting unit that emits blue light; the corresponding red subpixel on the color film layer includes a quantum dot emitting red light, and the corresponding green subpixel on the color film layer includes A quantum dot emitting green light, wherein the sub-pixel corresponding to blue on the color film layer comprises a transparent material. Since the light-emitting unit in the light-emitting module is made of the same material that emits blue light, it is convenient to produce a high-resolution display device.
- the quantum dot may include: a core 31; a shell 32 formed outside the core 31 and an organic ligand 33 formed outside the shell 32.
- the core 31 of the quantum dot may be one or at least one of materials ZnS, ZnO, GaN, ZnSe, CdS, ZnTe, GaSe, CdSe, CdTe, GaAs, InP, GaSb, InAs, Te, PbS, InSb, PbTe, and PbSe.
- the quantum The shell 32 of the dots may be formed of any one of SiO, TiO, ZnO, SiO 2 and MgO; the organic ligand 33 of the quantum dots includes S, P, COOH and NH 4 groups.
- the core-shell structure of the quantum dot shown in Fig. 3 contributes to the quantum dot luminescence, and the organic ligand located outside the shell facilitates the quantum dot: in an organic solvent, facilitating the fabrication of the quantum dot color film.
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/345,721 US20150318506A1 (en) | 2013-04-23 | 2013-05-28 | Organic light emitting diode display apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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CN201310142081.4 | 2013-04-23 | ||
CN201310142081.4A CN103236435B (zh) | 2013-04-23 | 2013-04-23 | 一种有机电致发光二极管显示装置 |
Publications (1)
Publication Number | Publication Date |
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WO2014172951A1 true WO2014172951A1 (zh) | 2014-10-30 |
Family
ID=48884465
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/CN2013/076305 WO2014172951A1 (zh) | 2013-04-23 | 2013-05-28 | 有机电致发光二极管显示装置 |
Country Status (3)
Country | Link |
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US (1) | US20150318506A1 (zh) |
CN (1) | CN103236435B (zh) |
WO (1) | WO2014172951A1 (zh) |
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EP3001403A3 (en) * | 2010-12-17 | 2016-05-04 | Dolby Laboratories Licensing Corporation | Quantum dots for display panels |
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2013
- 2013-04-23 CN CN201310142081.4A patent/CN103236435B/zh active Active
- 2013-05-28 WO PCT/CN2013/076305 patent/WO2014172951A1/zh active Application Filing
- 2013-05-28 US US14/345,721 patent/US20150318506A1/en not_active Abandoned
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WO2009014707A2 (en) * | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
WO2010056240A1 (en) * | 2008-11-13 | 2010-05-20 | Hcf Partners, L.P. | Cross-linked quantum dots and methods for producing and using the same |
CN102044552A (zh) * | 2009-10-16 | 2011-05-04 | 乐金显示有限公司 | 使用量子点的显示设备 |
US20120050632A1 (en) * | 2010-08-31 | 2012-03-01 | Chi Lin Technology Co., Ltd. | Display apparatus having quantum dot layer |
CN203250739U (zh) * | 2013-04-23 | 2013-10-23 | 京东方科技集团股份有限公司 | 一种有机电致发光二极管显示装置 |
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CN103236435B (zh) | 2016-03-02 |
US20150318506A1 (en) | 2015-11-05 |
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