CN104241553A - Oled器件的制备方法及其制得的oled器件 - Google Patents
Oled器件的制备方法及其制得的oled器件 Download PDFInfo
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- CN104241553A CN104241553A CN201410537662.2A CN201410537662A CN104241553A CN 104241553 A CN104241553 A CN 104241553A CN 201410537662 A CN201410537662 A CN 201410537662A CN 104241553 A CN104241553 A CN 104241553A
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Abstract
本发明提供一种OLED器件的制备方法及其制得的OLED器件,所述OLED器件的制备方法为:步骤1、提供一基板,并在基板上依次形成阳极与空穴传输层;步骤2、在空穴传输层上通过溶液成膜法制作发光层,所述发光层包括红色子像素、绿色子像素与蓝色子像素,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备;步骤3、在发光层上依次形成电子传输层与阴极;步骤4、提供一封装盖板,其设置于阴极上方,将所述基板与封装盖板通过密封胶框粘结起来,从而完成该OLED器件的封装。由于发光层中的各种子像素均通过溶液成膜法制备,使得该OLED器件的制作过程中不需要使用精细掩膜板,因此制作成本低,材料利用率高,良品率高。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种OLED器件的制备方法及其制得的OLED器件。
背景技术
有机发光二极管显示器(Organic Light Emitting Diode,OLED)是一种极具发展前景的平板显示技术,它不仅具有十分优异的显示性能,还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性,被誉为“梦幻显示器”,再加上其生产设备投资远小于液晶显示器(LiquidCrystal Display,LCD),得到了各大显示器厂家的青睐,已成为显示技术领域中第三代显示器件的主力军。
半导体纳米晶(semiconductor nanocrystals,缩写NCs),是指尺寸为1-100nm的半导体纳米晶粒。由于半导体纳米晶的尺寸小于其他材料的激子波尔半径,表现出强的量子限域效应,呈现出新的材料性质,因此也称为量子点(quantum dots,缩写QDs)。
由于外部能量的激发(光致发光,电致发光,阴极射线发光等),电子从基态跃迁到激发态。处于激发态的电子和空穴可能会形成激子。电子与空穴发生复合,最终弛豫到基态。多余的能量通过复合和弛豫过程释放,可能辐射复合发出光子。
量子点发光二极管(Quantum Dots Light Emitting Diodes,QD-LEDs)具有重要的商业应用的价值,在最近十年引起人们强烈的研究兴趣。事实上,QD-LEDs相对于有机发光二极管(Organic Light Emitting Diodes,OLEDs)有很多的优势:(1)量子点发光的线宽在20-30nm之间,相对于有机发光大于50nm的发光,FWHM要窄,这对于现实画面的色纯度起关键的作用。(2)无机材料相对于有机材料表现出更好的热稳定性。当器件处于高亮度或高电流密度下,焦耳热是使器件退化的主要原因。由于优异的热稳定性,基于无机材料的器件将表现出长的使用寿命。(3)由于红绿蓝三基色有机材料的寿命不同,OLEDs显示器的颜色将随时间变化。然而,用同一种材料合成不同尺寸的量子点,由于量子限域效应,可以实现三基色的发光。同一种材料可以表现出相似的退化寿命。(4)QD-LEDs可以实现红外光的发射,而有机材料的发光波长一般小于1微米。(5)对于量子点没有自旋统计的限制,其外量子效率(external quantum efficiency,EQE)有可能达到100%。
然而在OLED器件热蒸镀制程时需要使用精细掩膜板(Fine metal mask,简称FMM),不仅制程成本高,而且材料利用率低,良品率低。因此有必要研发一种新的制程简单,材料利用率高,良品率高的OLED器件。
发明内容
本发明的目的在于提供一种OLED器件的制备方法及其制得的OLED器件,其发光层中的各种子像素均采用溶液成膜法制备,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备,所述OLED器件的制作过程中不需要使用精细掩膜板,因此制作成本低,材料利用率高,良品率高。
为实现上述目的,本发明提供一种OLED器件的制备方法,包括:
步骤1、提供一基板,并在基板上依次形成阳极与空穴传输层;
步骤2、在空穴传输层上通过溶液成膜法制作发光层,所述发光层包括红色子像素、绿色子像素与蓝色子像素,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备;
步骤3、在发光层上依次形成电子传输层与阴极;
步骤4、提供一封装盖板,其设置于阴极上方,将所述基板与封装盖板通过密封胶框粘结起来,从而完成该OLED器件的封装。
所述阳极、空穴传输层、电子传输层、及阴极分别采用真空热蒸镀法制备;所述电子传输层由八羟基喹啉铝形成,所述空穴传输层由聚三苯胺或者聚乙撑二氧噻吩形成。
所述基板为TFT基板,所述基板与封装盖板由玻璃或柔性材料形成,所述基板与封装盖板中至少一个透光。
所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素采用量子点制备,则所述红色子像素通过有机主体材料与红光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素采用量子点制备,则所述绿色子像素通过有机主体材料与绿光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素采用量子点制备,则所述蓝色子像素通过有机主体材料与蓝光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+,所述红光量子点为CdSe/CdS/ZnS;所述有机主体材料为4,4',4″-三(咔唑-9-基)三苯胺或2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪;所述溶剂为甲醇、乙醇、氯苯或氯仿。
所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素采用量子点制备,则所述红色子像素通过红光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素采用量子点制备,则所述绿色子像素通过绿光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素采用量子点制备,则所述蓝色子像素通过蓝光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;所述表面包覆剂为硬脂酸、氧化三锌基膦或聚甲基丙烯酸甲酯;所述溶剂为甲醇、乙醇、水、氯苯或氯仿;所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+,所述红光量子点为CdSe/CdS/ZnS。
所述步骤2中,所述至少一种子像素采用量子点制备为所述蓝色子像素采用量子点制备。
所述步骤2中,所述至少一种子像素采用有机发光材料制备,如果是红色子像素采用有机发光材料制备,则所述红色子像素通过有机主体材料与红光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素采用有机发光材料制备,则所述绿色子像素通过有机主体材料与绿光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素采用有机发光材料制备,则所述蓝色子像素通过有机主体材料与蓝光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;所述蓝光发光材料为9,10-二(β-萘基)蒽,所述绿光发光材料为三(2-苯基吡啶)合铱,所述红光发光材料为4-(二巯基亚甲基)-2-甲基-6-(对二甲氨基苯乙烯基)-4H-吡喃;所述有机主体材料为4,4',4″-三(咔唑-9-基)三苯胺或2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪;所述溶剂为甲醇、乙醇、氯苯或氯仿。
所述步骤2中,至少一种子像素采用有机发光材料制备为所述红色子像素与绿色子像素采用有机发光材料制备。
本发明还提供一种OLED器件,包括基板、形成于基板上的阳极、形成于阳极上的空穴传输层、形成于空穴传输层上的发光层、形成于发光层上的电子传输层、形成于电子传输层上的阴极、设于阴极上方的封装盖板、及设于基板与封装盖板之间粘结所述基板与封装盖板的密封胶框,所述发光层包括红色子像素、绿色子像素与蓝色子像素,所述发光层中的各种子像素均通过溶液成膜法制备,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备。
所述蓝色子像素采用量子点制备,所述红色子像素与绿色子像素采用有机发光材料制备。
本发明的有益效果:本发明提供的一种OLED器件的制备方法,其发光层中的各种子像素均采用溶液成膜法制备,所述阳极、空穴传输层、电子传输层、及阴极采用真空热蒸镀法制备,因此该OLED器件的制备方法中不需要使用精细掩膜板,使得该制备方法的制作成本低,材料利用率高,良品率高;并且通过设置所述发光层中的至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备,使得本发明的制备方法与全部子像素采用量子点的制备方法相比,制作成本更低,与全部子像素采用有机发光材料的制备方法相比,所得到的OLED器件的性能更好;本发明制得的OLED器件结合了量子点OLED与溶液成膜OLED的优点,从而具有优良的性能,可应用于平面显示器、电视机及其他显示领域。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明OLED器件的制备方法的示意流程图;
图2为本发明OLED器件的结构示意图;
图3为本发明OLED器件的像素排列结构的平面示意图;
图4为图3所示的像素排列结构用于显示面板时的示意图;
图5为图3所示的像素排列结构用于显示面板时的另一示意图;
图6为图3所示的像素排列结构的TFT驱动电路结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果,以下结合本发明的优选实施例极其附图进行详细描述。
请参阅图1,本发明提供一种OLED器件的制备方法,包括:
步骤1、提供一基板1,并在基板1上依次形成阳极21与空穴传输层22。
步骤2、在空穴传输层22上通过溶液成膜法制作发光层23,所述发光层23包括红色子像素231、绿色子像素232与蓝色子像素233,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备。
步骤3、在发光层23上依次形成电子传输层24与阴极25。
步骤4、提供一封装盖板2,其设置于阴极25上方,将所述基板1与封装盖板2通过密封胶框3粘结起来,从而完成该OLED器件的封装。
所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素231采用量子点制备,则所述红色子像素231可通过有机主体材料与红光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用量子点制备,则所述绿色子像素232可通过有机主体材料与绿光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用量子点制备,则所述蓝色子像素233可通过有机主体材料与蓝光量子点及溶剂混合,涂覆并挥发去除溶剂后得到。
其中,所述有机主体材料为TCTA(4,4',4″-三(咔唑-9-基)三苯胺)或TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪);
所述化合物TCTA(4,4',4″-三(咔唑-9-基)三苯胺)的结构式为:
所述化合物TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪)的结构式为:
所述溶剂为甲醇、乙醇、氯苯或氯仿等。
所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素231采用量子点制备,则所述红色子像素231也可以通过红光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用量子点制备,则所述绿色子像素232也可以通过绿光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用量子点制备,则所述蓝色子像素233也可以通过蓝光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;
其中,所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4等,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+等,所述红光量子点为CdSe/CdS/ZnS等;
所述表面包覆剂为硬脂酸、氧化三锌基膦或聚甲基丙烯酸甲酯;
所述溶剂为甲醇、乙醇、水、氯苯或氯仿等。
优选的,所述步骤2中,所述至少一种子像素采用量子点制备为所述蓝色子像素233采用量子点制备。
在上述采用量子点制备子像素的方法中,所述有机主体材料与表面包覆剂具有一个共同的作用,即防止量子点团聚与氧化。因为量子点是纳米颗粒,零维材料,表面活性大,因此容易发生团聚,导致氧化并使荧光淬灭。
所述步骤2中,所述至少一种子像素采用有机发光材料制备,如果是红色子像素231采用有机发光材料制备,则所述红色子像素231通过有机主体材料与红光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用有机发光材料制备,则所述绿色子像素232通过有机主体材料与绿光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用有机发光材料制备,则所述蓝色子像素233通过有机主体材料与蓝光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;
其中,所述有机主体材料为TCTA(4,4',4″-三(咔唑-9-基)三苯胺)或TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪),所述溶剂为甲醇、乙醇、水、氯苯或氯仿等;
所述蓝光发光材料可以为9,10-二(β-萘基)蒽(ADN),其结构式为
所述绿光发光材料可以为三(2-苯基吡啶)合铱(Ir(ppy)3),其结构式为
所述红光发光材料可以为4-(二巯基亚甲基)-2-甲基-6-(对二甲氨基苯乙烯基)-4H-吡喃(DCM),其结构式为
优选的,所述步骤2中,所述至少一种子像素采用有机发光材料制备为所述红色子像素231与绿色子像素232采用有机发光材料制备。
其中,所述基板1为TFT基板,所述基板1与封装盖板2由玻璃或柔性材料形成,所述基板1与封装盖板2中至少一个透光。优选的,所述基板1与封装盖板2均为玻璃板。所述基板1与封装盖板2通过密封胶框3粘结在一起,可以防止外界的水汽、氧气进入,从而密封与保护内部电子器件。
所述阳极21、空穴传输层22、电子传输层24、及阴极25分别采用真空热蒸镀法制备,不需要精细掩膜板(FMM)。优选的,所述电子传输层24由八羟基喹啉铝(Alq3)等材料形成,所述空穴传输层22由聚三苯胺(poly-TPD)或者聚乙撑二氧噻吩(PEDOT)等材料形成。
请参阅图2,基于上述制备方法,本发明还提供一种OLED器件,包括基板1、形成于基板1上的阳极21、形成于阳极21上的空穴传输层22、形成于空穴传输层22上的发光层23、形成于发光层23上的电子传输层24、形成于电子传输层24上的阴极25、设于阴极25上方的封装盖板2、及设于基板1与封装盖板2之间粘结所述基板1与封装盖板2的密封胶框3。
所述发光层23包括红色子像素231、绿色子像素232与蓝色子像素233,其中,所有子像素均通过溶液成膜法制备,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备。
优选的,所述蓝色子像素233采用量子点制备,所述红色子像素231与绿色子像素232采用有机发光材料制备。
所述至少一种子像素采用量子点制备,如果是红色子像素231采用量子点制备,则所述红色子像素231可通过有机主体材料与红光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用量子点制备,则所述绿色子像素232可通过有机主体材料与绿光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用量子点制备,则所述蓝色子像素233可通过有机主体材料与蓝光量子点及溶剂混合,涂覆并挥发去除溶剂后得到。
其中,所述有机主体材料为TCTA(4,4',4″-三(咔唑-9-基)三苯胺)或TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪);
所述化合物TCTA(4,4',4″-三(咔唑-9-基)三苯胺)的结构式为:
所述化合物TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪)的结构式为:
所述溶剂为甲醇、乙醇、氯苯或氯仿等。
所述至少一种子像素采用量子点制备,如果是红色子像素231采用量子点制备,则所述红色子像素231也可以通过红光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用量子点制备,则所述绿色子像素232也可以通过绿光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用量子点制备,则所述蓝色子像素233也可以通过蓝光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;
其中,所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4等,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+等,所述红光量子点为CdSe/CdS/ZnS等;
所述表面包覆剂为硬脂酸、氧化三锌基膦或聚甲基丙烯酸甲酯;
所述溶剂为甲醇、乙醇、水、氯苯或氯仿等。
在上述采用量子点制备子像素的方法中,所述有机主体材料与表面包覆剂具有一个共同的作用,即防止量子点团聚与氧化。因为量子点是纳米颗粒,零维材料,表面活性大,因此容易发生团聚,导致氧化并使荧光淬灭。
所述至少一种子像素采用有机发光材料制备,如果是红色子像素231采用有机发光材料制备,则所述红色子像素231通过有机主体材料与红光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素232采用有机发光材料制备,则所述绿色子像素232通过有机主体材料与绿光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素233采用有机发光材料制备,则所述蓝色子像素233通过有机主体材料与蓝光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;
其中,所述有机主体材料为TCTA(4,4',4″-三(咔唑-9-基)三苯胺)或TRZ(2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪),所述溶剂为甲醇、乙醇、水、氯苯或氯仿等;
所述蓝光发光材料可以为9,10-二(β-萘基)蒽(ADN),其结构式为
所述绿光发光材料可以为三(2-苯基吡啶)合铱(Ir(ppy)3),其结构式为
所述红光发光材料可以为4-(二巯基亚甲基)-2-甲基-6-(对二甲氨基苯乙烯基)-4H-吡喃(DCM),其结构式为
本发明的OLED器件中,所述基板1为TFT基板,所述基板1与封装盖板2由玻璃或柔性材料形成,所述基板1与封装盖板2中至少一个透光。优选的,所述基板1与封装盖板2均为玻璃板。所述基板1与封装盖板2通过密封胶框3粘结在一起,可以防止外界的水汽、氧气进入,从而密封与保护内部电子器件。
所述阳极21、空穴传输层22、电子传输层24、及阴极25分别采用真空热蒸镀法制备,不需要精细掩膜板(FMM)。优选的,所述电子传输层24由八羟基喹啉铝(Alq3)等材料形成,所述空穴传输层22由聚三苯胺(poly-TPD)或者聚乙撑二氧噻吩(PEDOT)等材料形成。
请参阅图3,其为本发明OLED器件的像素排列结构的平面示意图;图4为图3所示的像素排列结构用于显示面板时的示意图;图5为图3所示的像素排列结构用于显示面板时的另一示意图。如图6所示,所述红色子像素231、绿色子像素232与蓝色子像素233分别通过一个TFT(薄膜晶体管)4驱动。每个子像素对应一个TFT,以控制每个子像素对应的发光层区域是否发光。
综上所述,本发明提供的一种OLED器件的制备方法,其发光层中的各种子像素均采用溶液成膜法制备,所述阳极、空穴传输层、电子传输层、及阴极采用真空热蒸镀法制备,因此该OLED器件的制备方法中不需要使用精细掩膜板,使得该制备方法的制作成本低,材料利用率高,良品率高;并且通过设置所述发光层中的至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备,使得本发明的制备方法与全部子像素采用量子点的制备方法相比,制作成本更低,与全部子像素采用有机发光材料的制备方法相比,所得到的OLED器件的性能更好;本发明制得的OLED器件结合了量子点OLED与溶液成膜OLED的优点,从而具有优良的性能,可应用于平面显示器、电视机及其他显示领域。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种OLED器件的制备方法,其特征在于,包括:
步骤1、提供一基板(1),并在基板(1)上依次形成阳极(21)与空穴传输层(22);
步骤2、在空穴传输层(22)上通过溶液成膜法制作发光层(23),所述发光层(23)包括红色子像素(231)、绿色子像素(232)与蓝色子像素(233),其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备;
步骤3、在发光层(23)上依次形成电子传输层(24)与阴极(25);
步骤4、提供一封装盖板(2),其设置于阴极(25)上方,将所述基板(1)与封装盖板(2)通过密封胶框(3)粘结起来,从而完成该OLED器件的封装。
2.如权利要求1所述的OLED器件的制备方法,其特征在于,所述阳极(21)、空穴传输层(22)、电子传输层(24)、及阴极(25)分别采用真空热蒸镀法制备;所述电子传输层(24)由八羟基喹啉铝形成,所述空穴传输层(22)由聚三苯胺或者聚乙撑二氧噻吩形成。
3.如权利要求1所述的OLED器件的制备方法,其特征在于,所述基板(1)为TFT基板,所述基板(1)与封装盖板(2)由玻璃或柔性材料形成,所述基板(1)与封装盖板(2)中至少一个透光。
4.如权利要求1所述的OLED器件的制备方法,其特征在于,所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素(231)采用量子点制备,则所述红色子像素(231)通过有机主体材料与红光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素(232)采用量子点制备,则所述绿色子像素(232)通过有机主体材料与绿光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素(233)采用量子点制备,则所述蓝色子像素(233)通过有机主体材料与蓝光量子点及溶剂混合,涂覆并挥发去除溶剂后得到;所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+,所述红光量子点为CdSe/CdS/ZnS;所述有机主体材料为4,4',4″-三(咔唑-9-基)三苯胺或2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪;所述溶剂为甲醇、乙醇、氯苯或氯仿。
5.如权利要求1所述的OLED器件的制备方法,其特征在于,所述步骤2中,所述至少一种子像素采用量子点制备,如果是红色子像素(231)采用量子点制备,则所述红色子像素(231)通过红光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素(232)采用量子点制备,则所述绿色子像素(232)通过绿光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素(233)采用量子点制备,则所述蓝色子像素(233)通过蓝光量子点与表面包覆剂及溶剂混合,涂覆并挥发去除溶剂后得到;所述表面包覆剂为硬脂酸、氧化三锌基膦或聚甲基丙烯酸甲酯;所述溶剂为甲醇、乙醇、水、氯苯或氯仿;所述蓝光量子点为ZnCdS、CdSe/ZnS或纳米SiN4,所述绿光量子点为CdSe/ZnS或ZnSe:Cu2+,所述红光量子点为CdSe/CdS/ZnS。
6.如权利要求1所述的OLED器件的制备方法,其特征在于,所述步骤2中,所述至少一种子像素采用量子点制备为所述蓝色子像素(233)采用量子点制备。
7.如权利要求1所述的OLED器件的制备方法,其特征在于,所述步骤2中,所述至少一种子像素采用有机发光材料制备,如果是红色子像素(231)采用有机发光材料制备,则所述红色子像素(231)通过有机主体材料与红光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是绿色子像素(232)采用有机发光材料制备,则所述绿色子像素(232)通过有机主体材料与绿光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;如果是蓝色子像素(233)采用有机发光材料制备,则所述蓝色子像素(233)通过有机主体材料与蓝光发光材料及溶剂混合,涂覆并挥发去除溶剂后得到;所述蓝光发光材料为9,10-二(β-萘基)蒽,所述绿光发光材料为三(2-苯基吡啶)合铱,所述红光发光材料为4-(二巯基亚甲基)-2-甲基-6-(对二甲氨基苯乙烯基)-4H-吡喃;所述有机主体材料为4,4',4″-三(咔唑-9-基)三苯胺或2,4,6-三(9H-咔唑-9-基)-1,3,5-三嗪;所述溶剂为甲醇、乙醇、氯苯或氯仿。
8.如权利要求1所述的OLED器件的制备方法,其特征在于,所述步骤2中,至少一种子像素采用有机发光材料制备为所述红色子像素(231)与绿色子像素(232)采用有机发光材料制备。
9.一种采用如权利要求1所述的制备方法制得的OLED器件,包括基板(1)、形成于基板(1)上的阳极(21)、形成于阳极(21)上的空穴传输层(22)、形成于空穴传输层(22)上的发光层(23)、形成于发光层(23)上的电子传输层(24)、形成于电子传输层(24)上的阴极(25)、设于阴极(25)上方的封装盖板(2)、及设于基板(1)与封装盖板(2)之间粘结所述基板(1)与封装盖板(2)的密封胶框(3),所述发光层(23)包括红色子像素(231)、绿色子像素(232)与蓝色子像素(233),其特征在于,所述发光层(23)中的各种子像素均通过溶液成膜法制备,其中,至少一种子像素采用量子点制备,至少一种子像素采用有机发光材料制备。
10.如权利要求9所述的OLED器件,其特征在于,所述蓝色子像素(233)采用量子点制备,所述红色子像素(231)与绿色子像素(232)采用有机发光材料制备。
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