CN201864770U - 电子枪蒸发用坩埚 - Google Patents

电子枪蒸发用坩埚 Download PDF

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CN201864770U
CN201864770U CN2010206178984U CN201020617898U CN201864770U CN 201864770 U CN201864770 U CN 201864770U CN 2010206178984 U CN2010206178984 U CN 2010206178984U CN 201020617898 U CN201020617898 U CN 201020617898U CN 201864770 U CN201864770 U CN 201864770U
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crucible
evaporation
electron gun
materials
coating materials
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刘锋
赵志刚
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JIANGSU TAOJING CO Ltd
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JIANGSU TAOJING CO Ltd
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Priority to US13/303,143 priority patent/US20120128894A1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

电子枪蒸发用坩埚，包括坩埚（1）和坩埚（3），坩埚（1）设在坩埚（3）的上面，之间为间隙配合，其特征在于：所述的坩埚（1）和坩埚（3）中间放置有镀膜材料（2）。本实用新型，电子枪在工作时，电子束不直接作用于蒸发材料，而靠石墨底座进行传导加热，实现较低蒸发温度材料的蒸发。保证材料本身的性能。

Description

电子枪蒸发用坩埚
技术领域
本实用新型涉及一种新型电子枪蒸发用坩埚设备，通过用间接加热的方法实现较低蒸发温度的材料的蒸发，比如眼镜用镜片的防水和超防水的蒸发。
背景技术
随着眼镜技术的发展，现在开发了镜片表面用来防水的防水镀膜材料和用来防油污的超硬防水材料，而这些均是有机化合物，所以蒸发温度很低，传统的蒸发方法采用电子束直接作用于镀膜材料，这会引起材料的变异，导致防水和防油污等功能的下降。
发明内容
针对以上不足，本实用新型的目的在于提供一种电子枪蒸发用坩埚，通过间接传热的方式，从而确保材料在蒸发时温度较低，较低蒸发温度的材料没有变异，从而保证材料本身的特性。
本实用新型的技术方案是通过以下方式实现的：电子枪蒸发用坩埚，包括坩埚1和坩埚3，坩埚1设在坩埚3的上面，之间为间隙配合，其特征在于：所述的坩埚1和坩埚3中间放置有镀膜材料2。
所述的坩埚1为不锈钢材料制造。
所述的坩埚3为高纯石墨制造。
本实用新型，电子枪在工作时，电子束不直接作用于蒸发材料，而靠石墨底座进行传导加热，实现较低蒸发温度材料的蒸发。保证材料本身的性能。
附图说明
图1是本实用新型的结构剖视图。
图2是电子束作用于本实用新型的示意图。
具体实施方式
由图1知，本实施例的电子枪蒸发用坩埚，由坩埚1和坩埚3组成，坩埚1设在坩埚3的上面，之间为间隙配合，镀膜材料2放置在其内，方便镀膜材料2的放入以及废旧镀膜材料的取出。坩埚1为不锈钢制造，可以减少变形，提高使用寿命，减少更换次数。坩埚3为石墨制造的坩埚底座。
如图2所示是电子束作用于本实用新型的示意图。工作时，电子枪所发出来的电子束作用于坩埚1和坩埚3上，通过坩埚1对镀膜材料2的辐射以及坩埚3对镀膜材料2的传导来加热镀膜材料2，这样降低了电子束的温度，镀膜材料2在合理的温度下蒸发，从而保证了镀膜材料2本身的特性，使得镜片表面防水和防油污性能的增加，提高了镜片的附加值。
电子枪在工作时，电子束的温度很高，而有些蒸发材料在高温时会分解和变质，利用此蒸发源可蒸发此类材料。电子束不直接作用于蒸发材料，而靠石墨底座进行传导加热，实现较低蒸发温度材料的蒸发。

Claims (3)

1.电子枪蒸发用坩埚，包括坩埚（1）和坩埚（3），坩埚（1）设在坩埚（3）的上面，之间为间隙配合，其特征在于：所述的坩埚（1）和坩埚（3）中间放置有镀膜材料（2）。
2.根据权利要求1所述的电子枪蒸发用坩埚，其特征在于：所述的坩埚（1）为不锈钢材料制造。
3.根据权利要求1所述的电子枪蒸发用坩埚，其特征在于：所述的坩埚（3）为高纯石墨制造。
CN2010206178984U 2010-11-22 2010-11-22 电子枪蒸发用坩埚 Expired - Lifetime CN201864770U (zh)

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CN2010206178984U CN201864770U (zh) 2010-11-22 2010-11-22 电子枪蒸发用坩埚
US13/303,143 US20120128894A1 (en) 2010-11-22 2011-11-23 Crucible for Electron Gun Evaporation

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CN2010206178984U CN201864770U (zh) 2010-11-22 2010-11-22 电子枪蒸发用坩埚

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050611A (zh) * 2012-02-01 2013-04-17 俞国宏 一种高光效白光led倒装芯片

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104241553A (zh) * 2014-10-13 2014-12-24 深圳市华星光电技术有限公司 Oled器件的制备方法及其制得的oled器件

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US3772519A (en) * 1970-03-25 1973-11-13 Jersey Nuclear Avco Isotopes Method of and apparatus for the separation of isotopes
FR2244014B1 (zh) * 1973-09-17 1976-10-08 Bosch Gmbh Robert
US4102767A (en) * 1977-04-14 1978-07-25 Westinghouse Electric Corp. Arc heater method for the production of single crystal silicon
US4131753A (en) * 1977-05-18 1978-12-26 Airco, Inc. Multiple electron-beam vapor source assembly
JPS5941510B2 (ja) * 1979-07-24 1984-10-08 双葉電子工業株式会社 酸化ベリリウム膜とその形成方法
CH645137A5 (de) * 1981-03-13 1984-09-14 Balzers Hochvakuum Verfahren und vorrichtung zum verdampfen von material unter vakuum.
US4472453A (en) * 1983-07-01 1984-09-18 Rca Corporation Process for radiation free electron beam deposition
DE3339131A1 (de) * 1983-10-28 1985-05-09 Leybold-Heraeus GmbH, 5000 Köln Elektronenstrahlverdampfer mit mindestens zwei magnetischen ablenksystemen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103050611A (zh) * 2012-02-01 2013-04-17 俞国宏 一种高光效白光led倒装芯片
CN103050611B (zh) * 2012-02-01 2014-04-02 俞国宏 一种高光效白光led倒装芯片

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