CN104282846A - 一种ito基底的制作方法、oled装置及其制作方法 - Google Patents
一种ito基底的制作方法、oled装置及其制作方法 Download PDFInfo
- Publication number
- CN104282846A CN104282846A CN201410211683.5A CN201410211683A CN104282846A CN 104282846 A CN104282846 A CN 104282846A CN 201410211683 A CN201410211683 A CN 201410211683A CN 104282846 A CN104282846 A CN 104282846A
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- ito
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- ito substrate
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- chlorine
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- 239000000758 substrate Substances 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000460 chlorine Substances 0.000 claims abstract description 32
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 30
- 230000008569 process Effects 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 238000005660 chlorination reaction Methods 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 17
- 239000000126 substance Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 25
- 238000009616 inductively coupled plasma Methods 0.000 claims description 16
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 14
- 238000005516 engineering process Methods 0.000 claims description 13
- 238000009832 plasma treatment Methods 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- 229910015844 BCl3 Inorganic materials 0.000 claims description 3
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 65
- 239000007789 gas Substances 0.000 description 7
- 239000011368 organic material Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- VFUDMQLBKNMONU-UHFFFAOYSA-N 9-[4-(4-carbazol-9-ylphenyl)phenyl]carbazole Chemical group C12=CC=CC=C2C2=CC=CC=C2N1C1=CC=C(C=2C=CC(=CC=2)N2C3=CC=CC=C3C3=CC=CC=C32)C=C1 VFUDMQLBKNMONU-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000004770 highest occupied molecular orbital Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410211683.5A CN104282846A (zh) | 2014-05-20 | 2014-05-20 | 一种ito基底的制作方法、oled装置及其制作方法 |
Applications Claiming Priority (1)
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---|---|---|---|
CN201410211683.5A CN104282846A (zh) | 2014-05-20 | 2014-05-20 | 一种ito基底的制作方法、oled装置及其制作方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104282846A true CN104282846A (zh) | 2015-01-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410211683.5A Pending CN104282846A (zh) | 2014-05-20 | 2014-05-20 | 一种ito基底的制作方法、oled装置及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104282846A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863451A (zh) * | 2017-10-30 | 2018-03-30 | 武汉华星光电技术有限公司 | 一种oled阳极的制备方法及oled显示装置的制备方法 |
CN113258024A (zh) * | 2021-04-13 | 2021-08-13 | 泰山学院 | 一种倒置底发射式oled的ito电极修饰方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1633221A (zh) * | 2005-01-12 | 2005-06-29 | 友达光电股份有限公司 | 调整导体表面功函数的方法与有机发光元件及其制作方法 |
CN102610765A (zh) * | 2012-04-06 | 2012-07-25 | 复旦大学 | 一种提高氧化铟锡透明导电膜表面功函数的表面修饰方法 |
CN102709490A (zh) * | 2012-06-01 | 2012-10-03 | 吉林大学 | 一种有机光电器件透明氧化物电极的溶液处理方法 |
CN102945693A (zh) * | 2012-10-31 | 2013-02-27 | 清华大学 | 提高ito透明导电薄膜表面功函数的方法及其应用 |
US20130240853A1 (en) * | 2012-03-15 | 2013-09-19 | West Virginia University | Plasma-Chlorinated Electrode and Organic Electronic Devices Using the Same |
-
2014
- 2014-05-20 CN CN201410211683.5A patent/CN104282846A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1633221A (zh) * | 2005-01-12 | 2005-06-29 | 友达光电股份有限公司 | 调整导体表面功函数的方法与有机发光元件及其制作方法 |
US20130240853A1 (en) * | 2012-03-15 | 2013-09-19 | West Virginia University | Plasma-Chlorinated Electrode and Organic Electronic Devices Using the Same |
CN102610765A (zh) * | 2012-04-06 | 2012-07-25 | 复旦大学 | 一种提高氧化铟锡透明导电膜表面功函数的表面修饰方法 |
CN102709490A (zh) * | 2012-06-01 | 2012-10-03 | 吉林大学 | 一种有机光电器件透明氧化物电极的溶液处理方法 |
CN102945693A (zh) * | 2012-10-31 | 2013-02-27 | 清华大学 | 提高ito透明导电薄膜表面功函数的方法及其应用 |
Non-Patent Citations (1)
Title |
---|
X.A.CAO等: "Performance enhancement of organic light-emitting diodes by chlorine plasma treatment of indium tin oxide", 《APPLIED PHYSICS LETTERS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107863451A (zh) * | 2017-10-30 | 2018-03-30 | 武汉华星光电技术有限公司 | 一种oled阳极的制备方法及oled显示装置的制备方法 |
CN113258024A (zh) * | 2021-04-13 | 2021-08-13 | 泰山学院 | 一种倒置底发射式oled的ito电极修饰方法 |
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Effective date of registration: 20160223 Address after: No. 100, science Avenue, hi tech Development Zone, Henan, Zhengzhou Applicant after: Zhengzhou University Address before: 450000 Henan city in Zhengzhou province Xin Yuan masters No. 14 Building 3 unit 3 floor East (room 29) Applicant before: Zhang Yiqiang |
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Addressee: Zhang Yiqiang Document name: Notification of Passing Examination on Formalities |
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Addressee: Zhengzhou University Document name: Notification of Patent Invention Entering into Substantive Examination Stage |
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Application publication date: 20150114 |