WO2016061842A1 - 彩色显示器件 - Google Patents

彩色显示器件 Download PDF

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Publication number
WO2016061842A1
WO2016061842A1 PCT/CN2014/089958 CN2014089958W WO2016061842A1 WO 2016061842 A1 WO2016061842 A1 WO 2016061842A1 CN 2014089958 W CN2014089958 W CN 2014089958W WO 2016061842 A1 WO2016061842 A1 WO 2016061842A1
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layer
blue
light emitting
sub
quantum dot
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PCT/CN2014/089958
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English (en)
French (fr)
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刘亚伟
王宜凡
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深圳市华星光电技术有限公司
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Priority to US14/424,347 priority Critical patent/US9966417B2/en
Publication of WO2016061842A1 publication Critical patent/WO2016061842A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
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    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
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    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • H10K85/30—Coordination compounds
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    • H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
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    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color display device.
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal display
  • the other is white light + RGB filter (Color Filter, CF) technology, represented by LG. Since the mature CF technology of the LCD can be utilized, the mask alignment is not required, the evaporation process is greatly simplified, the production cost can be reduced, and the large-size high-resolution OLED can be prepared. However, since the filter absorbs most of the light energy, only about 30% of the light energy is transmitted, so a high-performance white light material is required, otherwise the display device is inefficient, and is generally used for a small molecule OLED display. .
  • RGB filter Color Filter
  • Quantum dot Inorganic quantum dots (Quantum dot) are widely used in bioluminescent probes and medical diagnostics due to their advantages of photoluminescence, stable performance, long life, wide absorption spectrum and good color purity. They are excellent photoluminescent materials and are very suitable. As a CF or CCM layer material for OLEDs. However, this aspect has not been reported yet.
  • the color conversion layer enables the color display device to emit light of various colors; the color display device is simple in fabrication process and low in cost; and the color filter layer in the color conversion layer is made by using a quantum dot material to make the color
  • the color purity of the display device is high.
  • the present invention provides a color display device comprising: a substrate, an anode formed on the substrate, a thin film transistor array formed on the anode, a hole injection layer formed on the thin film transistor array, and formed in the hole a hole transport layer on the injection layer, a white light emitting layer formed on the hole transport layer, an electron transport layer formed on the white light emitting layer, a cathode formed on the electron transport layer, and disposed above the cathode and bonded to the substrate a cover plate, a color conversion layer formed on the inner side of the cover plate, and a seal sealant for bonding the substrate and the cover plate, wherein the white light emitting layer emits white light, and the color conversion layer includes spaced blue sub-pixel regions a green sub-pixel region, a red sub-pixel region and a white sub-pixel region, wherein the blue sub-pixel region is formed with a blue filter layer, and the green sub-pixel region is formed with a green light filter layer or a green light conversion layer
  • the thin film transistor in the thin film transistor array controls the white light emitting layer to emit white light.
  • the white light emitting layer is formed by thermal evaporation, and the white light emitting layer has a single layer structure or a composite layer structure.
  • the material of the single layer structure is a mixed material formed by doping the organic blue main body material with the blue light emitting material, the green light emitting material and the red light emitting material, or the blue light emitting material and the yellow material.
  • the organic blue host material is 4,4',4"-tris(carbazol-9-yl)triphenylamine, or 2,4,6,-tris(9H-carbazol-9-yl)-1,3 , 5-triazine
  • the blue light-emitting material is polyfluorene, 4,4′-bis(2,2-distyryl)biphenyl or FIr 6
  • the green light-emitting material is tris(2-benzene) Pyridine
  • the red light-emitting material is tris(1-phenyl-isoquinoline)-ruthenium (III)
  • the yellow light-emitting material is 5,6,11,12-tetraphenyl-tetra benzene.
  • the blue filter layer is formed of a blue light quantum dot material formed of a green light quantum dot material
  • the red light filter layer is formed of a red light quantum dot material.
  • the red light quantum dot material is CdSe/CdS/ZnS
  • the green light quantum dot material is CdSe/ZnS or ZnSe:Cu 2+
  • the blue light quantum dot material is ZnCdS, CdSe/ZnS or nano SiN 4 .
  • the blue filter layer is obtained by mixing, coating and volatilizing a solvent of a blue quantum dot material with a surface coating agent and a solvent; the green light filter layer or the green light conversion layer passes through the green light quantum dot material and the surface coating agent and The solvent is mixed, coated, and evaporated to obtain a solvent; the red light filter layer or the red light conversion layer is obtained by mixing, coating, and volatilizing the red light quantum dot material with a surface coating agent and a solvent, respectively.
  • the substrate and the cover plate are formed of glass or a flexible material, and at least one of the substrate and the cover plate is transparent to light.
  • the material of the electron transport layer is octahydroxyquinoline aluminum
  • the material for transporting holes is polytriphenylamine
  • the material of the hole injection layer is polyethylene dioxythiophene.
  • the color display device of the present invention has a white light emitting layer and a color conversion layer, so that the color display device can emit light of various colors; the white light emitting layer is formed by a thermal evaporation process, and is produced. No need to use a fine mask, the production process is simple, and the cost is low; the color filter layer in the color conversion layer is fabricated by using quantum dot materials, and the inorganic quantum dots are utilized for stable performance, long life, wide absorption spectrum and good color purity.
  • the advantages of the color display device are higher in color purity, and the color display device of the invention is ultra-thin, transparent and flexible, and is easier to fabricate on the flexible substrate than the existing LCD and LED; by setting on the color conversion layer
  • the white sub-pixel area makes the device more power-saving when displaying a white picture, and since the white sub-pixel area does not need to form any filter layer, the manufacturing cost is more saved.
  • FIG. 1 is a schematic structural view of a color display device of the present invention
  • FIG. 2 is a schematic plan view showing a pixel arrangement structure of a color display device of the present invention
  • FIG. 3 is a schematic view showing the pixel arrangement structure shown in FIG. 2 for displaying a panel
  • FIG. 4 is a schematic structural view of a TFT driving circuit of the pixel arrangement structure shown in FIG. 2;
  • FIG. 5 is a schematic plan view showing another pixel arrangement structure of a color display device of the present invention.
  • FIG. 6 is a schematic view showing the pixel arrangement structure shown in FIG. 5 for displaying a panel.
  • the present invention provides a color display device comprising a substrate 1, an anode 21 formed on the substrate 1, a thin film transistor array 23 formed on the anode 21, and a hole injection layer formed on the thin film transistor array 23. 24.
  • a hole transport layer 25 formed on the hole injection layer 24, a white light-emitting layer 26 formed on the hole transport layer 25, an electron transport layer 27 formed on the white light-emitting layer 26, and an electron transport layer 27 The upper cathode 28, the cover plate 3 disposed above the cathode 28 and bonding to the substrate 1, the color conversion layer 4 formed on the inner side of the cover 3, and the bonding substrate 1 and the cover 3 Sealing frame glue 6.
  • the white light emitting layer 26 emits white light
  • the color conversion layer 4 includes a blue sub-pixel region 41, a green sub-pixel region 43, a red sub-pixel region 45 and a white sub-pixel region 47, which are spaced apart, and the blue sub-pixel
  • the region 41 is formed with a blue light filter layer
  • the green sub-pixel region 43 is formed with a green light filter layer
  • the red sub-pixel region 45 is formed with a red light conversion layer
  • the white sub-pixel region 47 is empty, that is, white light is emitted.
  • the white light emitted by layer 26 passes directly through white sub-pixel region 47.
  • the green sub-pixel region 43 is formed with a green light conversion layer
  • the red sub-pixel region 45 is formed with a red light filter layer.
  • the blue, green and red light filter layers are filtered by a color filter (CF) principle to obtain light of a desired color.
  • the green light and red light conversion layer adopts a color change material (CCM) to convert white light into light of a desired color.
  • CCM color change material
  • the white light emitted by the white light emitting layer 26 passes through the blue sub-pixel region 41 of the color conversion layer 4 to become blue light, and the white light emitted by the white light emitting layer 26 passes through the green sub-pixel region 43 of the color conversion layer 4 .
  • the white light emitted by the white light emitting layer 26 passes through the red sub-pixel region 45 of the color conversion layer 4 to become red light, and the white light emitted from the white light emitting layer 26 passes through the color conversion layer 4 .
  • the white sub-pixel area 47 remains white after that.
  • Each of the sub-pixel regions in the color conversion layer 4 corresponds to one of the thin film transistor arrays 23 to control the white light emitting layer 26 corresponding to the sub-pixel region through the thin film transistor. Whether the area is glowing.
  • the white light emitting layer 26 is formed by thermal evaporation. Specifically, the white light emitting layer 26 can emit white light through a single layer structure or a composite light through a composite layer structure.
  • the material of the single layer structure is a mixed material formed by doping the organic blue main material with the blue light emitting material, the green light emitting material and the red light emitting material, or a blue light emitting material.
  • the white light emitting layer 26 may have a three-layer structure or a two-layer structure.
  • the materials of the layers in the three-layer structure are respectively a mixed material formed by doping the organic blue main material and the blue light emitting material, and the organic blue main material is mixed with the green light emitting material.
  • the materials of the layers in the two-layer structure may be a mixture of an organic blue main body material and a blue light emitting material and a green light emitting material, respectively. a material, and a mixed material formed by doping the organic blue host material with the red light emitting material;
  • the materials of the layers in the two-layer structure may also be a mixed material formed by doping the organic blue main body material with the red light emitting material and the green light emitting material, and a mixed material formed by doping the organic blue main body material and the blue light emitting material. ;
  • the materials of the layers in the two-layer structure may also be a mixed material formed by doping the organic blue main body material with the red light emitting material and the blue light emitting material, and a mixed material formed by doping the organic blue main material and the green light emitting material. ;
  • the materials of the layers in the two-layer structure may also be blue light-emitting materials and yellow light-emitting materials, respectively.
  • the organic blue host material is 4,4',4"-tris(carbazol-9-yl)triphenylamine (TCAC), or 2,4,6,-tris(9H-carbazol-9-yl)- 1,3,5-triazine (TRZ);
  • the blue light-emitting material is polyfluorene, 4,4'-bis(2,2-distyryl)biphenyl (DPVBi) or FIr 6 ;
  • the photoluminescent material is tris(2-phenylpyridine) ruthenium (Ir(ppy) 3 );
  • the red luminescent material is tris(1-phenyl-isoquinoline) ruthenium (III) (Ir(piq)) 3 );
  • the yellow light-emitting material is 5,6,11,12-tetraphenyl rubrene.
  • the white light emitting layer 26 is formed by a thermal evaporation process, a fine metal mask (FMM) is not required for fabrication, and the white light emitting layer is only a few hundred nanometers thick, so that the color display device structure is fabricated.
  • the process is simple and the cost is low.
  • the blue filter layer is formed of a blue light quantum dot material or a green light conversion layer formed of a green light quantum dot material
  • the red light filter layer or the red light conversion layer is formed of a red light quantum dot material.
  • the red light quantum dot material is CdSe/CdS/ZnS or the like
  • the green light quantum dot material is CdSe/ZnS or ZnSe: Cu 2+ or the like
  • the blue light quantum dot material is ZnCdS, CdSe/ZnS or nano SiN 4 or the like.
  • the blue filter layer is obtained by mixing, coating, and volatilizing a solvent of a blue quantum dot material with a surface coating agent and a solvent; and the green light filter layer is mixed with a surface coating agent and a solvent by a green light quantum dot material.
  • the red light filter layer is obtained by mixing, coating, and volatilizing the red light quantum dot material with the surface coating agent and the solvent.
  • the addition of surface coating agents during the manufacturing process can prevent quantum dot agglomeration and Oxidation.
  • the surface coating agent is stearic acid, tri-zinc-phosphine oxide, or polymethyl methacrylate (PMMA).
  • the substrate 1 and the cover plate 3 may be a glass plate, or may be a flexible material, at least one of which is to be transparent.
  • the substrate 1 and the cover plate 3 are both glass plates.
  • the seal frame glue 6 can prevent the outside water vapor and oxygen from entering and protect the internal electronic components.
  • the material of the hole injection layer 24 is polyethylene dioxythiophene (PEDOT), the material of the hole transport layer 25 is polytriphenylamine (poly-TPD), and the material of the electron transport layer 27 is octahydroxyl. Quinoline aluminum (Alq 3 ).
  • FIG. 2 is a schematic plan view showing a pixel arrangement structure of a color display device according to the present invention.
  • the white light emitting layer 26 has only one pixel point on the whole surface, that is, the blue sub-pixel region 41 , the green sub-pixel region 43 , and the red color.
  • the regions corresponding to the sub-pixel regions 45 are all the same sub-pixels.
  • FIG. 3 is a schematic view showing the pixel arrangement structure shown in FIG. 2 for displaying a panel.
  • the thin film transistor 5 drives the white light emitting layer 26 to emit white light. After being energized, the entire white light emitting layer 26 is completely illuminated.
  • the white color passes through the blue light filtering layer on the color conversion layer 4, and the green light is filtered.
  • the layer and the red light filter layer are filtered to become blue light, green light and red light, respectively, and the white light is still white light after passing through the white sub-pixel region (the filter layer is not provided) on the color conversion layer 4.
  • FIG. 5 is a schematic plan view showing another pixel arrangement structure of the color display device of the present invention.
  • FIG. 6 is a schematic diagram of the pixel arrangement structure shown in FIG. 5 for displaying a panel.
  • the color display device of the present invention allows the color display device to emit light of various colors by providing a white light emitting layer and a color conversion layer; the white light emitting layer is formed by a thermal evaporation process, and is not produced. A fine mask is needed, the fabrication process is simple, and the cost is low; the color filter layer in the color conversion layer is fabricated by using quantum dot materials, and the inorganic quantum dots are utilized for stable performance, long life, wide absorption spectrum, good color purity, etc.
  • the color display device has high color purity, and the color display device of the invention is ultra-thin, transparent and flexible, and is easier to fabricate on the flexible substrate than the existing LCD and LED; by setting white on the color conversion layer
  • the sub-pixel area makes the device more power-saving when displaying a white picture, and the white sub-pixel area does not need to form any filter layer, thereby saving production cost.

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Abstract

一种彩色显示器件，包括：基板（1）、形成于基板（1）上的阳极（21）、形成于阳极（21）上的薄膜晶体管阵列（23）、形成于薄膜晶体管阵列（23）上的空穴注入层（24）、形成于空穴注入层（24）上的空穴传输层（25）、形成于空穴传输层（25）上的白光发光层（26）、形成于白光发光层（26）上的电子传输层（27）、形成于电子传输层（27）上的阴极（28）、设于阴极（28）上方并与基板（1）贴合的盖板（3）、形成于盖板（3）内侧的色彩转换层（4）、及粘结基板（1）与盖板（3）的密封框胶（6），其中，所述色彩转换层（4）包括间隔设置的蓝色子像素区域（41）、绿色子像素区域（43）、红色子像素区域（45）与白色子像素区域（47），所述蓝色子像素区域（41）形成有蓝光过滤层，所述绿色子像素区域（43）形成有绿光过滤层或绿光转换层，所述红色子像素区域（45）形成有红光过滤层或红光转换层，所述白色子像素区域（47）未设置过滤层。

Description

彩色显示器件 技术领域
本发明涉及显示技术领域，尤其涉及一种彩色显示器件。
背景技术
有机发光二极管显示器(Organic Light Emitting Diode，OLED)是一种极具发展前景的平板显示技术，它不仅具有十分优异的显示性能，还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，再加上其生产设备投资远小于液晶显示器(Liquid Crystal Display，LCD)，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
目前，实现OLED的彩色化有几种技术路线：一种是红绿蓝(Red、Green、Blue，RGB)三基色发光，以三星公司为代表。该技术只适用于容易升华的有机小分子材料，其优点是工艺简单成熟，操作简便.但由于在制备高分辨率显示屏时需要高精度掩膜及精确的对位，导致产能较低、成本较高，而且由于三基色的寿命、激发率以及衰减度相差较大，造成了彩色显示器件的偏色。
另一种是白光+RGB滤光片(Color Filter，CF)技术，以LG公司为代表。由于可利用LCD成熟的CF技术，不需要掩膜对位，极大地简化了蒸镀过程，因而能降低生产成本，可用于制备大尺寸高分辨率OLED。但是，由于滤光片吸收了大部分的光能，只有约30％的光能透过，所以需要高性能的白光材料，否则显示器件的效率较低，一般也是用于小分子的OLED显示屏。
无机量子点(Quantum dot)由于具有光致荧光、性能稳定、寿命长、吸收谱宽及色纯度好等优点，广泛应用于生物荧光探针及医学诊断，是优良的光致荧光材料，非常适合作为OLED的CF或CCM层材料。但是此方面尚未见报道。
因此，有必要研发一种新的制作工艺较简单、色纯度高、光效好、稳定性高、厚度薄的彩色显示器件。
发明内容
本发明的目的在于提供一种彩色显示器件，通过设置白光发光层与色 彩转换层，使得该彩色显示器件可以发出各种颜色的光；所述彩色显示器件的制作工艺简单，成本较低；通过采用量子点材料来制作色彩转换层中的彩色过滤层，使得该彩色显示器件的色纯度较高。
为实现上述目的，本发明提供一种彩色显示器件，包括：基板、形成于基板上的阳极、形成于阳极上的薄膜晶体管阵列、形成于薄膜晶体管阵列上的空穴注入层、形成于空穴注入层上的空穴传输层、形成于空穴传输层上的白光发光层、形成于白光发光层上的电子传输层、形成于电子传输层上的阴极、设于阴极上方并与基板贴合的盖板、形成于盖板内侧的色彩转换层、及粘结基板与盖板的密封框胶，其中，所述白光发光层发白光，所述色彩转换层包括间隔设置的蓝色子像素区域、绿色子像素区域、红色子像素区域与白色子像素区域，所述蓝色子像素区域形成有蓝光过滤层，所述绿色子像素区域形成有绿光过滤层或绿光转换层，所述红色子像素区域形成有红光过滤层或红光转换层，所述白色子像素区域未设置过滤层。
所述薄膜晶体管阵列中的薄膜晶体管控制所述白光发光层发出白光。
所述白光发光层通过热蒸镀的方式形成，所述白光发光层为单层结构或复合层结构。
当所述白光发光层为单层结构时，其单层结构的材料为有机蓝光主体材料与蓝光发光材料、绿光发光材料和红光发光材料掺杂形成的混合材料，或者蓝光发光材料与黄光发光材料掺杂形成的混合材料。
所述有机蓝光主体材料为4,4',4″-三(咔唑-9-基)三苯胺、或2，4，6，-三(9H-咔唑-9-基)-1,3,5-三嗪，所述蓝光发光材料为聚芴类、4,4’-双(2,2-二苯乙烯基)联苯或FIr6，所述绿光发光材料为三(2-苯基吡啶)合铱，所述红光发光材料为三(1-苯基-异喹啉)合铱(III)，所述黄光发光材料为5,6,11,12-四苯基并四苯。
所述蓝光过滤层由蓝光量子点材料形成，所述绿光过滤层由绿光量子点材料形成，所述红光过滤层由红光量子点材料形成。
所述红光量子点材料为CdSe/CdS/ZnS，所述绿光量子点材料为CdSe/ZnS或ZnSe:Cu2+，所述蓝光量子点材料为ZnCdS、CdSe/ZnS或纳米SiN4。
所述蓝光过滤层通过蓝光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到；所述绿光过滤层或绿光转换层通过绿光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到；所述红光过滤层或红光转换层分别通过红光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到。
所述基板与盖板由玻璃或柔性材料形成，所述基板与盖板中至少一个透光。
所述电子传输层的材料为八羟基喹啉铝，所述空穴传输的材料为聚三苯胺，所述空穴注入层的材料为聚乙撑二氧噻吩。
本发明的有益效果：本发明的彩色显示器件，通过设置白光发光层与色彩转换层，使得该彩色显示器件可以发出各种颜色的光；所述白光发光层通过热蒸镀制程形成，制作时不需要使用精细掩膜版，制作工艺简单，成本较低；通过采用量子点材料来制作色彩转换层中的彩色过滤层，利用了无机量子点性能稳定、寿命长、吸收谱宽及色纯度好等优点，使得该彩色显示器件的色纯度较高，同时本发明的彩色显示器件超薄、透明、易弯曲，比现有的LCD、LED更易制作在柔性基板上；通过在色彩转换层上设置白色子像素区域，使得器件在显示白画面时更省电，由于白色子像素区域不需要形成任何过滤层，因此更节约制作成本。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明彩色显示器件的结构示意图；
图2为本发明彩色显示器件的一种像素排列结构的平面示意图；
图3为图2所示的像素排列结构用于显示面板时的示意图；
图4为图2所示的像素排列结构的TFT驱动电路结构示意图；
图5为本发明彩色显示器件的另一种像素排列结构的平面示意图；
图6为图5所示的像素排列结构用于显示面板时的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果，以下结合本发明的优选实施例极其附图进行详细描述。
请参阅图1，本发明提供一种彩色显示器件，包括基板1、形成于基板1上的阳极21、形成于阳极21上的薄膜晶体管阵列23、形成于薄膜晶体管阵列23上的空穴注入层24、形成于空穴注入层24上的空穴传输层25、形成于空穴传输层25上的白光发光层26、形成于白光发光层26上的电子传输层27、形成于电子传输层27上的阴极28、设于阴极28上方并与基板1贴合的盖板3、形成于盖板3内侧的色彩转换层4、及粘结基板1与盖板3 的密封框胶6。
所述白光发光层26发白光，所述色彩转换层4包括间隔设置的蓝色子像素区域41、绿色子像素区域43、红色子像素区域45与白色子像素区域47，所述蓝色子像素区域41形成有蓝光过滤层，所述绿色子像素区域43形成有绿光过滤层，所述红色子像素区域45形成有红光转换层，所述白色子像素区域47是空的，即白光发光层26发出的白光直接穿过白色子像素区域47。
作为可选择的实施例，所述绿色子像素区域43形成有绿光转换层，所述红色子像素区域45形成有红光过滤层。
所述的蓝光、绿光与红光过滤层采用彩色滤光片(Color Filter,CF)原理，进行滤光，得到所要色彩的光。所述的绿光与红光转换层采用色转换材料(Color Change Material，CCM)，将白光转换成所要色彩的光。
所述白光发光层26发出的白光经过所述色彩转换层4的蓝色子像素区域41后变为蓝光，所述白光发光层26发出的白光经过所述色彩转换层4的绿色子像素区域43后变为绿光，所述白光发光层26发出的白光经过所述色彩转换层4的红色子像素区域45后变为红光，所述白光发光层26发出的白光经过所述色彩转换层4的白色子像素区域47后依然为白光。
所述色彩转换层4中的每一子像素区域各自对应于所述薄膜晶体管阵列23中的一个薄膜晶体管(TFT)，以通过该薄膜晶体管控制与所述子像素区域相对应的白光发光层26的区域是否发光。
优选的，所述白光发光层26通过热蒸镀的方式形成。具体的，所述白光发光层26可以通过单层结构发白光或者通过复合层结构复合发光实现白光。
当所述白光发光层26为单层结构时，其单层结构的材料为有机蓝光主体材料与蓝光发光材料、绿光发光材料和红光发光材料掺杂形成的混合材料，或者是蓝光发光材料与黄光发光材料掺杂形成的混合材料。
当所述白光发光层26为复合层结构时，所述白光发光层26可以是三层结构或者是两层结构。
当所述白光发光层26为三层结构时，所述三层结构中各层的材料分别为有机蓝光主体材料与蓝光发光材料掺杂形成的混合材料，有机蓝光主体材料与绿光发光材料掺杂形成的混合材料，以及有机蓝光主体材料与红光发光材料掺杂形成的混合材料。
当所述白光发光层26为两层结构时，所述两层结构中各层的材料可以分别为有机蓝光主体材料与蓝光发光材料和绿光发光材料掺杂形成的混合 材料，以及有机蓝光主体材料与红光发光材料掺杂形成的混合材料；
所述两层结构中各层的材料也可以分别为有机蓝光主体材料与红光发光材料和绿光发光材料掺杂形成的混合材料，以及有机蓝光主体材料与蓝光发光材料掺杂形成的混合材料；
所述两层结构中各层的材料也可以分别为有机蓝光主体材料与红光发光材料和蓝光发光材料掺杂形成的混合材料，以及有机蓝光主体材料与绿光发光材料掺杂形成的混合材料；
所述两层结构中各层的材料也可以分别为蓝光发光材料与黄光发光材料。
所述有机蓝光主体材料为4,4',4″-三(咔唑-9-基)三苯胺(TCAC)、或2，4，6，-三(9H-咔唑-9-基)-1,3,5-三嗪(TRZ)；所述蓝光发光材料为聚芴类、4,4’-双(2,2-二苯乙烯基)联苯(DPVBi)或FIr6；所述绿光发光材料为三(2-苯基吡啶)合铱(Ir(ppy)3)；所述红光发光材料为三(1-苯基-异喹啉)合铱(III)(Ir(piq)3)；所述黄光发光材料为5,6,11,12-四苯基并四苯(rubrene)。
所述有机蓝光主体材料4,4',4″-三(咔唑-9-基)三苯胺(TCAC)的结构式为：
Figure PCTCN2014089958-appb-000001
所述2，4，6，-三(9H-咔唑-9-基)-1,3,5-三嗪(TRZ)的结构式为：
Figure PCTCN2014089958-appb-000002
所述三(2-苯基吡啶)合铱(Ir(ppy)3)的结构式为：
Figure PCTCN2014089958-appb-000003
所述三(1-苯基-异喹啉)合铱(III)(Ir(piq)3)的结构式为：
Figure PCTCN2014089958-appb-000004
所述有机黄光发光材料5,6,11,12-四苯基并四苯(rubrene)的结构式为：
Figure PCTCN2014089958-appb-000005
由于所述白光发光层26通过热蒸镀制程形成，制作时不需要使用精细掩膜版(FMM，fine metal mask)，并且该白光发光层只有几百纳米厚，使得该彩色显示器件结构的制作工艺简单，成本较低。
优选的，所述蓝光过滤层由蓝光量子点材料形成，所述绿光过滤层或绿光转换层由绿光量子点材料形成，所述红光过滤层或红光转换层由红光量子点材料形成。
所述红光量子点材料为CdSe/CdS/ZnS等，所述绿光量子点材料为CdSe/ZnS或ZnSe:Cu2+等，所述蓝光量子点材料为ZnCdS、CdSe/ZnS或纳米SiN4等。
具体的，所述蓝光过滤层通过蓝光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到；所述绿光过滤层通过绿光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到；所述红光过滤层分别通过红光量子点材料与表面包覆剂及溶剂混合、涂覆并挥发去除溶剂后得到。
值得一提的是，由于量子点是纳米颗粒，零维材料，表面活性大，容易发生团聚，导致氧化并使荧光淬灭，因此在制作过程中添加表面包覆剂，可以防止量子点团聚与氧化。优选的，所述表面包覆剂为硬脂酸、氧化三锌基膦、或聚甲基丙烯酸甲酯(PMMA)。
具体的，所述基板1与盖板3可以是玻璃板，也可以是柔性材料，其中至少一个要透光，优选的，所述基板1与盖板3均为玻璃板。所述密封框胶6能够防止外界的水汽、氧气进入，保护内部电子器件。
所述空穴注入层24的材料为聚乙撑二氧噻吩(PEDOT)，所述空穴传 输层25的材料为聚三苯胺(poly-TPD)，所述电子传输层27的材料为八羟基喹啉铝(Alq3)。
请参阅图2，其为本发明彩色显示器件的一种像素排列结构的平面示意图，白光发光层26整面仅有一个像素点，即蓝色子像素区域41、绿色子像素区域43、及红色子像素区域45所对应的区域均为相同的子像素。图3为图2所示的像素排列结构用于显示面板时的示意图。如图4所示，薄膜晶体管5驱动所述白光发光层26发出白光，通电后整面白光发光层26全部点亮，所述白色通过所述色彩转换层4上的蓝光过滤层，绿光过滤层与红光过滤层过滤后分别变成蓝光，绿光和红光，所述白光通过所述色彩转换层4上的白色子像素区域(未设置过滤层)后依然为白光。
请参阅图5，其为本发明彩色显示器件的另一种像素排列结构的平面示意图；图6为图5所示的像素排列结构用于显示面板时的示意图。
综上所述，本发明的彩色显示器件，通过设置白光发光层与色彩转换层，使得该彩色显示器件可以发出各种颜色的光；所述白光发光层通过热蒸镀制程形成，制作时不需要使用精细掩膜版，制作工艺简单，成本较低；通过采用量子点材料来制作色彩转换层中的彩色过滤层，利用了无机量子点性能稳定、寿命长、吸收谱宽及色纯度好等优点，使得该彩色显示器件的色纯度较高，同时本发明的彩色显示器件超薄、透明、易弯曲，比现有的LCD、LED更易制作在柔性基板上；通过在色彩转换层上设置白色子像素区域，使得器件在显示白画面时更省电，由于白色子像素区域不需要形成任何过滤层，因此更节约制作成本。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种彩色显示器件，包括：基板、形成于基板上的阳极、形成于阳极上的薄膜晶体管阵列、形成于薄膜晶体管阵列上的空穴注入层、形成于空穴注入层上的空穴传输层、形成于空穴传输层上的白光发光层、形成于白光发光层上的电子传输层、形成于电子传输层上的阴极、设于阴极上方并与基板贴合的盖板、形成于盖板内侧的色彩转换层、及粘结基板与盖板的密封框胶，其中，所述白光发光层发白光，所述色彩转换层包括间隔设置的蓝色子像素区域、绿色子像素区域、红色子像素区域与白色子像素区域，所述蓝色子像素区域形成有蓝光过滤层，所述绿色子像素区域形成有绿光过滤层或绿光转换层，所述红色子像素区域形成有红光过滤层或红光转换层，所述白色子像素区域是空的。
  2. 如权利要求1所述的彩色显示器件，其中，所述薄膜晶体管阵列中的薄膜晶体管控制所述白光发光层发出白光。
  3. 如权利要求1所述的彩色显示器件，其中，所述白光发光层通过热蒸镀的方式形成，所述白光发光层为单层结构或复合层结构。
  4. 如权利要求3所述的彩色显示器件，其中，当所述白光发光层为单层结构时，其单层结构的材料为有机蓝光主体材料与蓝光发光材料、绿光发光材料和红光发光材料掺杂形成的混合材料，或者蓝光发光材料与黄光发光材料掺杂形成的混合材料。
  5. 如权利要求4所述的彩色显示器件，其中，所述有机蓝光主体材料为4,4',4″-三(咔唑-9-基)三苯胺、或2，4，6，-三(9H-咔唑-9-基)-1,3,5-三嗪，所述蓝光发光材料为聚芴类、4,4’-双(2,2-二苯乙烯基)联苯或FIr6，所述绿光发光材料为三(2-苯基吡啶)合铱，所述红光发光材料为三(1-苯基-异喹啉)合铱(III)，所述黄光发光材料为5,6,11,12-四苯基并四苯。
  6. 如权利要求1所述的彩色显示器件，其中，所述蓝光过滤层由蓝光量子点材料形成，所述绿光过滤层或绿光转换层由绿光量子点材料形成，所述红光过滤层或红光转换层由红光量子点材料形成。
  7. 如权利要求6所述的彩色显示器件，其中，所述红光量子点材料为CdSe/CdS/ZnS，所述绿光量子点材料为CdSe/ZnS或ZnSe:Cu2+，所述蓝光量子点材料为ZnCdS、CdSe/ZnS或纳米SiN4。
  8. 如权利要求6所述的彩色显示器件，其中，所述蓝光过滤层通过蓝光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到；所 述绿光过滤层通过绿光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到；所述红光过滤层分别通过红光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到。
  9. 如权利要求1所述的彩色显示器件，其中，所述基板与盖板由玻璃或柔性材料形成，所述基板与盖板中至少一个透光。
  10. 如权利要求1所述的彩色显示器件，其中，所述电子传输层的材料为八羟基喹啉铝，所述空穴传输的材料为聚三苯胺，所述空穴注入层的材料为聚乙撑二氧噻吩。
  11. 一种彩色显示器件，包括：基板、形成于基板上的阳极、形成于阳极上的薄膜晶体管阵列、形成于薄膜晶体管阵列上的空穴注入层、形成于空穴注入层上的空穴传输层、形成于空穴传输层上的白光发光层、形成于白光发光层上的电子传输层、形成于电子传输层上的阴极、设于阴极上方并与基板贴合的盖板、形成于盖板内侧的色彩转换层、及粘结基板与盖板的密封框胶，其中，所述白光发光层发白光，所述色彩转换层包括间隔设置的蓝色子像素区域、绿色子像素区域、红色子像素区域与白色子像素区域，所述蓝色子像素区域形成有蓝光过滤层，所述绿色子像素区域形成有绿光过滤层或绿光转换层，所述红色子像素区域形成有红光过滤层或红光转换层，所述白色子像素区域是空的；
    其中，所述薄膜晶体管阵列中的薄膜晶体管控制所述白光发光层发出白光；
    其中，所述白光发光层通过热蒸镀的方式形成，所述白光发光层为单层结构或复合层结构；
    其中，当所述白光发光层为单层结构时，其单层结构的材料为有机蓝光主体材料与蓝光发光材料、绿光发光材料和红光发光材料掺杂形成的混合材料，或者蓝光发光材料与黄光发光材料掺杂形成的混合材料；
    其中，所述有机蓝光主体材料为4,4',4″-三(咔唑-9-基)三苯胺、或2，4，6，-三(9H-咔唑-9-基)-1,3,5-三嗪，所述蓝光发光材料为聚芴类、4,4’-双(2,2-二苯乙烯基)联苯或FIr6，所述绿光发光材料为三(2-苯基吡啶)合铱，所述红光发光材料为三(1-苯基-异喹啉)合铱(III)，所述黄光发光材料为5,6,11,12-四苯基并四苯；
    其中，所述蓝光过滤层由蓝光量子点材料形成，所述绿光过滤层或绿光转换层由绿光量子点材料形成，所述红光过滤层或红光转换层由红光量子点材料形成；
    其中，所述红光量子点材料为CdSe/CdS/ZnS，所述绿光量子点材料为 CdSe/ZnS或ZnSe:Cu2+，所述蓝光量子点材料为ZnCdS、CdSe/ZnS或纳米SiN4；
    其中，所述蓝光过滤层通过蓝光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到；所述绿光过滤层通过绿光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到；所述红光过滤层分别通过红光量子点材料与表面包覆剂及溶剂混合，涂覆并挥发去除溶剂后得到；
    其中，所述基板与盖板由玻璃或柔性材料形成，所述基板与盖板中至少一个透光；
    其中，所述电子传输层的材料为八羟基喹啉铝，所述空穴传输的材料为聚三苯胺，所述空穴注入层的材料为聚乙撑二氧噻吩。
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