WO2021232502A1 - 显示面板及显示面板的制备方法 - Google Patents

显示面板及显示面板的制备方法 Download PDF

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WO2021232502A1
WO2021232502A1 PCT/CN2020/094733 CN2020094733W WO2021232502A1 WO 2021232502 A1 WO2021232502 A1 WO 2021232502A1 CN 2020094733 W CN2020094733 W CN 2020094733W WO 2021232502 A1 WO2021232502 A1 WO 2021232502A1
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light
emitting
emitting unit
layer
quantum dot
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PCT/CN2020/094733
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English (en)
French (fr)
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吴永伟
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/964,222 priority Critical patent/US20230157043A1/en
Publication of WO2021232502A1 publication Critical patent/WO2021232502A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission

Definitions

  • the present invention relates to the field of display technology, in particular to a display panel and a method for manufacturing the display panel.
  • OLED Organic Light-Emitting Diode
  • the OLED manufacturing process is based on evaporation technology.
  • large-scale evaporation equipment and fine masks Fine Metal Mask, FMM
  • FMM Fine Metal Mask
  • White OLED white light organic light-emitting diode
  • WOLED white light organic light-emitting diode
  • color film Color Filter
  • the mainstream device is that the blue light-emitting layer (B) and the yellow light-emitting layer (Y) form a laminated structure and emit white light.
  • This structure is simple and easy to implement. Under the premise of maintaining the evaporation process, large-area manufacturing of OLEDs is realized, but the color gamut and color purity are relatively poor.
  • most of the existing commercial blue OLED materials are fluorescent emission (theoretical external quantum efficiency is less than 5%), and the luminous efficiency and lifetime are not satisfactory.
  • the embodiment of the present invention provides a display panel and a manufacturing method of the display panel, which are used to solve the technical problems of relatively poor color gamut and color purity, and insufficient luminous efficiency and lifespan of the current display panel.
  • the present invention provides a display panel, including:
  • the second electrode is arranged opposite to the first electrode
  • At least two light-emitting units and at least one charge generation layer are provided between the first electrode and the second electrode, and the charge generation layer is provided between adjacent light-emitting units, wherein at least one The light-emitting units are doped with quantum dot light-emitting materials, and the light from each light-emitting unit is mixed to form white light.
  • the quantum dot light-emitting material includes a blue quantum dot light-emitting material, and at least one of the light-emitting units includes a blue quantum dot light-emitting layer.
  • the number of light-emitting units doped with the quantum dot light-emitting material is two, which are a first light-emitting unit and a second light-emitting unit, the first light-emitting unit and the The second light-emitting units are arranged oppositely.
  • it further includes a third light-emitting unit, which is disposed between the first light-emitting unit and the second light-emitting unit, and the third light-emitting unit includes a yellow organic light-emitting layer or is stacked on top of each other. Yellow organic light emitting layer and red organic light emitting layer.
  • the at least one charge generation layer includes a first charge generation layer and a second charge generation layer, and the first charge generation layer is disposed on the first light-emitting unit and the third light-emitting unit. Between the units, the second charge generation layer is arranged between the third light-emitting unit and the second light-emitting unit.
  • the light-emitting materials of the first light-emitting unit and the second light-emitting unit are the same.
  • the quantum dot luminescent material includes cadmium-based quantum dots, including at least one of cadmium sulfide, cadmium telluride, or cadmium selenide.
  • the quantum dot luminescent material includes at least one of silicon, germanium, zinc selenide, lead sulfide, lead selenide, indium phosphide, or indium arsenide.
  • it further includes a hole transport layer, an electron transport layer, and an electron injection layer.
  • the present invention provides a method for manufacturing a display panel.
  • the manufacturing method is used to prepare the display panel according to any one of the first aspects, and includes the following steps:
  • At least one of the light-emitting units is doped with a quantum dot light-emitting material.
  • the light-emitting unit doped with the quantum dot luminescent material is prepared by a wet processing process, including spray coating, wire rod coating, or roll-to-roll coating.
  • the quantum dot light-emitting material includes a blue quantum dot light-emitting material, and at least one of the light-emitting units includes a blue quantum dot light-emitting layer.
  • a first light-emitting unit and a second light-emitting unit are prepared respectively, and the first light-emitting unit and the The second light-emitting units are arranged oppositely.
  • the method further includes preparing a third light-emitting unit, preparing the third light-emitting unit between the first light-emitting unit and the second light-emitting unit, and the third light-emitting unit includes a yellow organic
  • the light-emitting layer may be a yellow organic light-emitting layer and a red organic light-emitting layer laminated on each other.
  • the at least one charge generation layer includes a first charge generation layer and a second charge generation layer, and the first light-emitting unit is prepared between the first light-emitting unit and the third light-emitting unit.
  • a charge generation layer, and the second charge generation layer is prepared between the third light-emitting unit and the second light-emitting unit.
  • the luminescent materials of the first light-emitting unit and the second light-emitting unit are the same.
  • the preparation of the quantum dot luminescent material includes cadmium-based quantum dots, including at least one of cadmium sulfide, cadmium telluride, or cadmium selenide.
  • the preparation of the quantum dot luminescent material includes at least one of silicon, germanium, zinc selenide, lead sulfide, lead selenide, indium phosphide, or indium arsenide.
  • the method further includes preparing a hole transport layer, an electron transport layer, and an electron injection layer.
  • the hole transport layer is prepared on one surface of the first electrode, and
  • the electron injection layer is prepared on one side surface, and the electron injection layer is prepared on one side surface of the electron injection layer.
  • the present invention replaces at least one organic light-emitting layer with a light-emitting unit doped with a quantum dot light-emitting material in the display panel, because the quantum dot light-emitting material has a narrow and stable emission spectrum.
  • the display panel optimizes the luminous efficiency and stability of at least one light-emitting unit while maintaining high screen brightness, thereby improving the color gamut, color purity and service life of the display panel.
  • FIG. 1 is a schematic diagram of the structure of a display panel in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the structure of a display panel in an embodiment of the present invention.
  • FIG. 3 is a flowchart of a manufacturing method of a display panel in an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, “plurality” means two or more than two, unless otherwise specifically defined.
  • the current display panels have technical problems such as reduced light transmittance of the display screen due to the external privacy protection film, affecting the display effect and display experience, increasing the overall thickness of the mobile phone, and being easy to damage and increase the cost.
  • an embodiment of the present invention provides a display panel and a manufacturing method of the display panel, which will be described in detail below.
  • the present invention provides a display panel, as shown in FIG. 1, which is a schematic structural diagram of the display panel in an embodiment of the present invention.
  • the display panel includes: a first electrode 101; a second electrode 102 arranged opposite to the first electrode 101; at least two light-emitting units 103 are arranged between the first electrode 101 and the second electrode 102 And at least one charge generation layer 104, the charge generation layer 104 is provided between adjacent light-emitting units 103, wherein at least one of the light-emitting units 103 is doped with quantum dot light-emitting materials, and each of the light-emitting units The light emitted from 103 is mixed to form white light.
  • the present invention replaces at least one organic light-emitting layer with the light-emitting unit 103 doped with quantum dot light-emitting material in the display panel. Because the quantum dot light-emitting material has a narrow emission spectrum and stability With advanced properties, the display panel optimizes the luminous efficiency and stability of at least one light-emitting unit 103 while maintaining high screen brightness, thereby improving the color gamut, color purity, and service life of the display panel.
  • the quantum dot light-emitting material includes a blue quantum dot light-emitting material
  • at least one of the light-emitting units 103 includes a blue quantum dot light-emitting layer 1031, one of which The light-emitting unit 103 is a yellow organic light-emitting layer 1032.
  • the blue quantum dot light-emitting layer 1031 emits a part of the blue light to excite the yellow fluorescent or phosphorescent conversion material in the yellow organic light-emitting layer 1032, the yellow organic light-emitting layer 1032 emits yellow light, and the yellow light and another part of the blue light are mixed to form White light emerges.
  • FIG. 2 is a schematic structural diagram of a display panel in an embodiment of the present invention.
  • the number of the light-emitting unit 103 doped with the quantum dot light-emitting material is two, which are a first light-emitting unit 1031 and a second light-emitting unit 1034, the first light-emitting unit 1031 and the second light-emitting unit 1034 Relatively arranged, at least one of the light-emitting units 103 is a blue quantum dot light-emitting layer.
  • the display panel further includes a third light-emitting unit disposed between the first light-emitting unit 1031 and the second light-emitting unit 1034, and the third light-emitting unit includes a yellow organic light-emitting layer 1032 Or, the yellow organic light emitting layer 1032 and the red organic light emitting layer 1033 are stacked on each other.
  • the third light emitting unit only includes the yellow organic light emitting layer 1032, that is, the display panel includes three light emitting units 103, the first light emitting unit 1031 and the second light emitting unit 1034 are doped with quantum dots
  • the third luminous unit is arranged between the first luminous unit 1031 and the second luminous unit 1034.
  • the first light-emitting unit 1031 and the second light-emitting unit 1034 emit blue light
  • the third light-emitting unit emits yellow light, which are mixed to form white light.
  • the third light emitting unit includes a yellow organic light emitting layer 1032 and a red organic light emitting layer 1033. Since the white light formed in the above embodiment lacks a red light component, the resulting white light has a high color temperature, a low color rendering index, and poor thermal characteristics. The red fluorescent or phosphorescent conversion material is excited, and the red light is mixed with yellow light and another part of blue light to form white light to emit.
  • the at least one charge generation layer 104 includes a first charge generation layer 1041 and a second charge generation layer 1042.
  • the first charge generation layer 1041 is disposed on the first light-emitting unit 1031 and the third Between the light-emitting units, the second charge generation layer 1042 is disposed between the third light-emitting unit and the second light-emitting unit 1034.
  • the light-emitting materials of the first light-emitting unit 1031 and the second light-emitting unit 1034 are the same. Since the energy levels of the two light-emitting units are matched, less blue light impurities are generated, which can improve the display brightness and luminous efficiency of the display panel.
  • the quantum dot luminescent material includes cadmium-based quantum dots, including at least one of cadmium sulfide, cadmium telluride, or cadmium selenide.
  • cadmium-based quantum dots including at least one of cadmium sulfide, cadmium telluride, or cadmium selenide.
  • the above-mentioned materials all have the advantages of low production cost, high yield, and high luminous efficiency.
  • the quantum dot luminescent material includes at least one of silicon, germanium, zinc selenide, lead sulfide, lead selenide, indium phosphide, indium arsenide, or perovskite.
  • the display panel further includes a hole transport layer 105, an electron transport layer 106, and an electron injection layer 107.
  • the first electrode 101 is an anode
  • the second electrode 102 is a cathode
  • the hole transport layer 105 is located close to the first electrode 101
  • the electron injection layer 107 is close to the second electrode 102.
  • the electron transport layer 106 is disposed between the electron injection layer 107 and the light-emitting unit 103.
  • the red organic light emitting layer 1033 is close to the first electrode 101 side, and the yellow organic light emitting layer 1032 is close to the second electrode 102 side.
  • the embodiment of the present invention also provides a manufacturing method of the display panel, and the manufacturing method is used to prepare the foregoing embodiment.
  • FIG. 3 is a flowchart of a manufacturing method of a display panel in an embodiment of the present invention.
  • the preparation method includes:
  • a first electrode 101 is provided, and at least two light-emitting units 103 and at least one charge generation layer 104 are prepared on the first electrode 101;
  • a second electrode 102 is prepared on the light-emitting unit 103 or the charge generation layer 104;
  • At least one of the light-emitting units 103 is doped with a quantum dot light-emitting material, and the light-emitting unit 103 doped with the quantum dot light-emitting material is prepared by a wet processing process, including spray coating, wire rod coating or Roll-to-roll coating.
  • each embodiment has its own focus.
  • each of the above units or structures can be implemented as independent entities, or can be combined arbitrarily, and implemented as the same or several entities.
  • For the specific implementation of each of the above units or structures please refer to the previous method embodiments. No longer.

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Abstract

一种显示面板及显示面板的制备方法，显示面板包括：第一电极（101）；第二电极（102），与第一电极（101）相对设置；在第一电极（101）和第二电极（102）之间设置有至少两个发光单元（103）和至少一个电荷产生层（104），相邻的发光单元（103）之间设置有电荷产生层（104），其中，至少一个发光单元（103）中掺杂有量子点发光材料，各个发光单元（103）的出光混合形成白光。

Description

显示面板及显示面板的制备方法 技术领域
本发明涉及显示技术领域，具体涉及一种显示面板及显示面板的制备方法。
 背景技术
有机发光二极管（Organic Light-Emitting Diode，OLED）自发光技术已逐渐成为下一代主流显示方案。基于OLED技术，屏幕可实现超薄，可弯曲折叠等形态，赋予终端显示器件丰富的想象空间和艺术性。
目前，OLED制造工艺基于蒸镀技术。中小尺寸方面，利用大型蒸镀设备与精细掩膜板（Fine Metal Mask，FMM），在基板上获得像素级规整排列的R、G、B发光区。然而，当基板尺寸增大到一定程度后，有机材料的蒸镀沉积位置会出现一定偏差，基于精细掩膜板的蒸镀方法不再适用。目前大尺寸OLED屏幕采用白光有机发光二极管（White OLED，WOLED）技术，即整面蒸镀不同发光颜色的有机材料，获得整面白光发射，再利用彩膜（Color Filter）技术实现彩色发射。目前主流的器件为蓝色发光层（B）与黄色发光层（Y）形成叠层结构混合发射白光。这种结构简单、易行，在保有蒸镀工艺的前提下，实现了OLED的大面积制造，但色域与色纯度相对较差。此外，现有商用的蓝光OLED材料多为荧光发射（理论外量子效率小于5%），发光效率与寿命都不尽如人意。
 技术问题
目前的显示面板存在色域和色纯度相对较差以及发光效率和寿命不足的技术问题。
 技术解决方案
本发明实施例提供一种显示面板及显示面板的制备方法，用于解决目前的显示面板存在色域和色纯度相对较差以及发光效率和寿命不足的技术问题。
为解决上述问题，第一方面，本发明提供一种显示面板，包括：
第一电极；
第二电极，与所述第一电极相对设置；
在所述第一电极和所述第二电极之间设置有至少两个发光单元和至少一个电荷产生层，相邻的所述发光单元之间设置有所述电荷产生层，其中，至少一个所述发光单元中掺杂有量子点发光材料，各个所述发光单元的出光混合形成白光。
在本发明的一些实施例中，所述量子点发光材料包括蓝色量子点发光材料，且至少一个所述发光单元包括蓝色量子点发光层。
在本发明的一些实施例中，当掺杂有所述量子点发光材料的所述发光单元数量为两个，分别为第一发光单元和第二发光单元，所述第一发光单元与所述第二发光单元相对设置。
在本发明的一些实施例中，还包括第三发光单元，设置于所述第一发光单元和所述第二发光单元之间，所述第三发光单元包括黄色有机发光层或为彼此层叠的黄色有机发光层和红色有机发光层。
在本发明的一些实施例中，所述至少一个电荷产生层包括第一电荷产生层和第二电荷产生层，所述第一电荷产生层设置于所述第一发光单元与所述第三发光单元之间，所述第二电荷产生层设置于所述第三发光单元与所述第二发光单元之间。
在本发明的一些实施例中，所述第一发光单元和所述第二发光单元的发光材料相同。
在本发明的一些实施例中，所述量子点发光材料包括镉系量子点，包括硫化镉、碲化镉或硒化镉中的至少一种。
在本发明的一些实施例中，所述量子点发光材料包括硅、锗、硒化锌、硫化铅、硒化铅、磷化铟或砷化铟中的至少一种。
在本发明的一些实施例中，还包括空穴传输层、电子传输层以及电子注入层。
第二方面，本发明提供一种显示面板的制备方法，所述制备方法用于制备如第一方面中任一所述的显示面板，包括以下步骤：
提供第一电极，在所述第一电极上制备至少两个发光单元和至少一个电荷产生层；
在所述发光单元或所述电荷产生层上制备第二电极；
其中，至少一个所述发光单元中掺杂有量子点发光材料。
在本发明的一些实施例中，制备掺杂有所述量子点发光材料的所述发光单元采用湿法加工工艺，包括喷射涂布、丝棒涂布或卷对卷涂布。
在本发明的一些实施例中，所述量子点发光材料包括蓝色量子点发光材料，且至少一个所述发光单元包括蓝色量子点发光层。
在本发明的一些实施例中，当掺杂有所述量子点发光材料的所述发光单元数量为两个，分别制备第一发光单元和第二发光单元，所述第一发光单元与所述第二发光单元相对设置。
在本发明的一些实施例中，还包括制备第三发光单元，在所述第一发光单元和所述第二发光单元之间制备所述第三发光单元，所述第三发光单元包括黄色有机发光层或为彼此层叠的黄色有机发光层和红色有机发光层。
在本发明的一些实施例中，所述至少一个电荷产生层包括第一电荷产生层和第二电荷产生层，在所述第一发光单元与所述第三发光单元之间制备所述第一电荷产生层，在所述第三发光单元与所述第二发光单元之间制备所述第二电荷产生层。
在本发明的一些实施例中，制备所述第一发光单元和所述第二发光单元的发光材料相同。
在本发明的一些实施例中，制备所述量子点发光材料包括镉系量子点，包括硫化镉、碲化镉或硒化镉中的至少一种。
在本发明的一些实施例中，制备所述量子点发光材料包括硅、锗、硒化锌、硫化铅、硒化铅、磷化铟或砷化铟中的至少一种。
在本发明的一些实施例中，还包括制备空穴传输层、电子传输层以及电子注入层，在所述第一电极的一侧表面制备所述空穴传输层，在所述第二电极的一侧表面制备所述电子注入层，在所述电子注入层的一侧表面制备所述电子注入层。
 有益效果
相较于现有的显示面板，本发明通过在所述显示面板内利用掺杂有量子点发光材料的发光单元替换了至少一个有机发光层，由于所述量子点发光材料具有发射光谱窄、稳定性高等性质，所述显示面板在保持较高屏幕亮度的同时，优化了至少一个所述发光单元的发光效率和稳定性，进而提高了所述显示面板的色域、色纯度以及使用寿命。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一个实施例中显示面板的结构示意图；
图2为本发明一个实施例中显示面板的结构示意图；及
图3为本发明一个实施例中显示面板的制备方法的流程图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
目前的显示面板中存在因外挂隐私保护膜而导致显示屏透光率降低、影响显示效果和显示体验、增大手机整体厚度以及容易损坏增加成本等的技术问题。
基于此，本发明实施例中提供一种显示面板及显示面板的制备方法，以下分别进行详细说明。
首先，本发明提供一种显示面板，如图1所示，图1为本发明一个实施例中显示面板的结构示意图。所述显示面板包括：第一电极101；第二电极102，与所述第一电极101相对设置；在所述第一电极101和所述第二电极102之间设置有至少两个发光单元103和至少一个电荷产生层104，相邻的所述发光单元103之间设置有所述电荷产生层104，其中，至少一个所述发光单元103中掺杂有量子点发光材料，各个所述发光单元103的出光混合形成白光。
相较于现有的显示面板，本发明通过在所述显示面板内利用掺杂有量子点发光材料的发光单元103替换了至少一个有机发光层，由于量子点发光材料具有发射光谱窄、稳定性高等性质，所述显示面板在保持较高屏幕亮度的同时，优化了至少一个所述发光单元103的发光效率和稳定性，进而提高了所述显示面板的色域、色纯度以及使用寿命。
在上述实施例的基础上，在本发明的一个实施例中，所述量子点发光材料包括蓝色量子点发光材料，且至少一个所述发光单元103包括蓝色量子点发光层1031，其中一个所述发光单元103为黄色有机发光层1032。所述蓝色量子点发光层1031出射一部分蓝光激发所述黄色有机发光层1032中的黄色荧光或磷光转换材料，所述黄色有机发光层1032出射黄光，所述黄光和另一部分蓝光混合形成白光出射。
在本发明的另一个实施例中，如图2所示，图2为本发明一个实施例中显示面板的结构示意图。当掺杂有所述量子点发光材料的所述发光单元103数量为两个，分别为第一发光单元1031和第二发光单元1034，所述第一发光单元1031与所述第二发光单元1034相对设置，其中至少一个所述发光单元103为蓝色量子点发光层。
在本发明实施例中，所述显示面板还包括第三发光单元，设置于所述第一发光单元1031和所述第二发光单元1034之间，所述第三发光单元包括黄色有机发光层1032或为彼此层叠的黄色有机发光层1032和红色有机发光层1033。
当所述第三发光单元仅包括黄色有机发光层1032，即所述显示面板包括三个所述发光单元103时，所述第一发光单元1031和所述第二发光单元1034掺杂有量子点发光材料，所述第三发光单元设置于所述第一发光单元1031与所述第二发光单元1034之间。所述第一发光单元1031和所述第二发光单元1034发出蓝光，所述第三发光单元发出黄光，混合形成白光。
当所述第三发光单元包括黄色有机发光层1032和红色有机发光层1033。由于上述实施例中形成的白光缺乏红光组分，所得到的白光色温偏高、显色指数偏低以及热特性较差，本实施例中新增所述红色有机发光层1033，通过一部分蓝光激发红色荧光或磷光转换材料，所述红光与黄光、另一部分蓝光混合形成白光出射。
基于上述实施例，所述至少一个电荷产生层104包括第一电荷产生层1041和第二电荷产生层1042，所述第一电荷产生层1041设置于所述第一发光单元1031与所述第三发光单元之间，所述第二电荷产生层1042设置于所述第三发光单元与所述第二发光单元1034之间。
所述第一发光单元1031和所述第二发光单元1034的发光材料相同。由于两个所述发光单元能级匹配，产生的蓝光杂质较少，可以改善所述显示面板的显示亮度和发光效率。
在一些实施例中，所述量子点发光材料包括镉系量子点，包括硫化镉、碲化镉或硒化镉中的至少一种。上述材料均具有制作成本低，产率大，发光效率高等优点。在另一些实施例中，所述量子点发光材料包括硅、锗、硒化锌、硫化铅、硒化铅、磷化铟、砷化铟或钙钛矿中的至少一种。
在上述实施例的基础上，所述显示面板还包括空穴传输层105、电子传输层106以及电子注入层107。优选的，第一电极101为阳极，第二电极102为阴极，所述空穴传输层105靠近所述第一电极101一侧设置，所述电子注入层107靠近所述第二电极102一侧设置，所述电子传输层106设置于所述电子注入层107与所述发光单元103之间。
优选的，所述红色有机发光层1033靠近所述第一电极101一侧，所述黄色有机发光层1032靠近所述第二电极102一侧。
为了更好地制得本发明实施例中的显示面板，在所述显示面板的基础之上，本发明实施例中还提供一种显示面板的制备方法，所述制备方法用于制备上述实施例中所述的显示面板。
如图3所示，图3为本发明一个实施例中显示面板的制备方法的流程图。所述制备方法，包括：
S1、提供第一电极101，在所述第一电极101上制备至少两个发光单元103和至少一个电荷产生层104；
S2、在所述发光单元103或所述电荷产生层104上制备第二电极102；
其中，至少一个所述发光单元103中掺杂有量子点发光材料，制备掺杂有所述量子点发光材料的所述发光单元103采用湿法加工工艺，包括喷射涂布、丝棒涂布或卷对卷涂布。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见上文针对其他实施例的详细描述，此处不再赘述。具体实施时，以上各个单元或结构可以作为独立的实体来实现，也可以进行任意组合，作为同一或若干个实体来实现，以上各个单元或结构的具体实施可参见前面的方法实施例，在此不再赘述。以上各个操作的具体实施可参见前面的实施例，在此不再赘述。
以上对本发明实施例进行了详细介绍，本文中应用了具体个例对本发明的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想；同时，对于本领域的技术人员，依据本发明的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本发明的限制。

Claims (19)

  1. 一种显示面板，包括：
    第一电极；
    第二电极，与所述第一电极相对设置；
    在所述第一电极和所述第二电极之间设置有至少两个发光单元和至少一个电荷产生层，相邻的所述发光单元之间设置有所述电荷产生层，其中，至少一个所述发光单元中掺杂有量子点发光材料，各个所述发光单元的出光混合形成白光。
  2. 根据所述权利要求1所述的显示面板，其中，所述量子点发光材料包括蓝色量子点发光材料，且至少一个所述发光单元包括蓝色量子点发光层。
  3. 根据所述权利要求1所述的显示面板，其中，当掺杂有所述量子点发光材料的所述发光单元数量为两个，分别为第一发光单元和第二发光单元，所述第一发光单元与所述第二发光单元相对设置。
  4. 根据所述权利要求3所述的显示面板，其中，还包括第三发光单元，设置于所述第一发光单元和所述第二发光单元之间，所述第三发光单元包括黄色有机发光层或为彼此层叠的黄色有机发光层和红色有机发光层。
  5. 根据所述权利要求4所述的显示面板，其中，所述至少一个电荷产生层包括第一电荷产生层和第二电荷产生层，所述第一电荷产生层设置于所述第一发光单元与所述第三发光单元之间，所述第二电荷产生层设置于所述第三发光单元与所述第二发光单元之间。
  6. 根据所述权利要求3所述的显示面板，其中，所述第一发光单元和所述第二发光单元的发光材料相同。
  7. 根据所述权利要求1所述的显示面板，其中，所述量子点发光材料包括镉系量子点，包括硫化镉、碲化镉或硒化镉中的至少一种。
  8. 根据所述权利要求1所述的显示面板，其中，所述量子点发光材料包括硅、锗、硒化锌、硫化铅、硒化铅、磷化铟或砷化铟中的至少一种。
  9. 根据所述权利要求1所述的显示面板，其中，还包括空穴传输层、电子传输层以及电子注入层。
  10. 一种显示面板的制备方法，包括：
    提供第一电极，在所述第一电极上制备至少两个发光单元和至少一个电荷产生层；
    在所述发光单元或所述电荷产生层上制备第二电极；
    其中，至少一个所述发光单元中掺杂有量子点发光材料。
  11. 根据所述权利要求10所述的制备方法，其中，制备掺杂有所述量子点发光材料的所述发光单元采用湿法加工工艺，包括喷射涂布、丝棒涂布或卷对卷涂布。
  12. 根据所述权利要求10所述的制备方法，其中，所述量子点发光材料包括蓝色量子点发光材料，且至少一个所述发光单元包括蓝色量子点发光层。
  13. 根据所述权利要求10所述的制备方法，其中，当掺杂有所述量子点发光材料的所述发光单元数量为两个，分别制备第一发光单元和第二发光单元，所述第一发光单元与所述第二发光单元相对设置。
  14. 根据所述权利要求13所述的制备方法，其中，还包括制备第三发光单元，在所述第一发光单元和所述第二发光单元之间制备所述第三发光单元，所述第三发光单元包括黄色有机发光层或为彼此层叠的黄色有机发光层和红色有机发光层。
  15. 根据所述权利要求14所述的制备方法，其中，所述至少一个电荷产生层包括第一电荷产生层和第二电荷产生层，在所述第一发光单元与所述第三发光单元之间制备所述第一电荷产生层，在所述第三发光单元与所述第二发光单元之间制备所述第二电荷产生层。
  16. 根据所述权利要求13所述的制备方法，其中，制备所述第一发光单元和所述第二发光单元的发光材料相同。
  17. 根据所述权利要求10所述的制备方法，其中，制备所述量子点发光材料包括镉系量子点，包括硫化镉、碲化镉或硒化镉中的至少一种。
  18. 根据所述权利要求10所述的制备方法，其中，制备所述量子点发光材料包括硅、锗、硒化锌、硫化铅、硒化铅、磷化铟或砷化铟中的至少一种。
  19. 根据所述权利要求10所述的制备方法，其中，还包括制备空穴传输层、电子传输层以及电子注入层，在所述第一电极的一侧表面制备所述空穴传输层，在所述第二电极的一侧表面制备所述电子注入层，在所述电子注入层的一侧表面制备所述电子注入层。
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