WO2019095452A1 - Oled显示器及其制作方法 - Google Patents

Oled显示器及其制作方法 Download PDF

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Publication number
WO2019095452A1
WO2019095452A1 PCT/CN2017/114509 CN2017114509W WO2019095452A1 WO 2019095452 A1 WO2019095452 A1 WO 2019095452A1 CN 2017114509 W CN2017114509 W CN 2017114509W WO 2019095452 A1 WO2019095452 A1 WO 2019095452A1
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substrate
oled
cathode
anodes
pixel defining
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PCT/CN2017/114509
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English (en)
French (fr)
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方俊雄
吴元均
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/747,411 priority Critical patent/US10784471B2/en
Publication of WO2019095452A1 publication Critical patent/WO2019095452A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED display and a method of fabricating the same.
  • OLED Organic Light Emitting Display
  • OLED has self-illumination, low driving voltage, high luminous efficiency, short response time, high definition and contrast ratio, near 180° viewing angle, wide temperature range, and flexible display.
  • a large-area full-color display and many other advantages have been recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED generally includes a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light-emitting layer provided on the hole transport layer, and a light-emitting layer.
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED display device generally employs an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • the AMOLED display includes a bottom-emitting OLED display (light emitted from the TFT substrate side) and a top-emitting OLED display (light emitted from the package cover side). Since the OLED light source of the top-emitting OLED display needs to penetrate the cathode, it must be transparent.
  • Cathode or translucent cathode the existing transparent cathode mostly uses transparent oxide (TCO), such as indium zinc oxide (IZO), the transparent cathode has a thickness ranging from 100 nm to 500 nm, and the sheet resistance is 5 ⁇ / ⁇ ⁇ 30 ⁇ / ⁇ between.
  • TCO transparent oxide
  • IZO indium zinc oxide
  • the translucent cathode is often made of a thinner metal such as silver (Ag), magnesium silver alloy (MgAg), etc., in order to maintain a light transmittance of 40% or more, the thickness of the translucent cathode is generally controlled between 10 nm and 20 nm.
  • the sheet resistance is between 1 ⁇ / ⁇ and 5 ⁇ / ⁇ .
  • the transparent cathode with the above resistance value and half The transparent cathode is only suitable for use in small-sized displays.
  • the voltage drop IR drop
  • the higher square resistance of the cathode which causes uneven brightness of the display and is input from the cathode voltage. The farther the end is, the lower the brightness.
  • both the OLED device White OLED structure in which the luminescent layer emits white light or the RGB side-by side in which the luminescent layer emits red, green and blue light have some common layers, such as a hole injection layer ( HIL), hole transport layer (HTL), electron transport layer (ETL), electron injection layer (EIL), and carrier generation layer (CGL), etc.
  • HIL hole injection layer
  • HTL hole transport layer
  • ETL electron transport layer
  • CGL carrier generation layer
  • FIG. 1 is a schematic diagram of lateral leakage of a common layer of a conventional OLED substrate.
  • the OLED light emitting layer 100 in the OLED substrate is a white light emitting layer
  • the OLED light emitting layer 100 of all sub-pixels of the OLED substrate is The hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer are connected to each other and appear as a common layer.
  • the carrier is in the OLED light-emitting layer 100.
  • Moving in a lateral direction moving from one sub-pixel to an adjacent sub-pixel, affecting the illumination of adjacent sub-pixels, resulting in uncontrollable brightness of the adjacent sub-pixels, and the OLED substrate is matched with the color filter When the screen is displayed, it is prone to cross color.
  • the OLED display has a better display effect; and can reduce the brightness unevenness caused by the voltage drop.
  • the present invention provides a method for fabricating an OLED display, comprising: a step of fabricating an OLED substrate and a step of packaging the OLED substrate, wherein the step of fabricating the OLED substrate comprises: providing a substrate, the lining Forming a plurality of anodes arranged in an array on the base substrate, forming a pixel defining layer on the base substrate and the plurality of anodes, and forming a plurality of first openings respectively corresponding to the plurality of anodes on the pixel defining layer Forming a plurality of OLED light-emitting layers on the plurality of anodes, respectively, forming on the plurality of OLED light-emitting layers and pixel defining layers a cathode, an auxiliary cathode connected to the cathode is formed above or below the cathode; wherein the plurality of OLED light-emitting layers are not connected; the auxiliary cathode is disposed corresponding to a plurality of anode
  • the method for fabricating the OLED display specifically includes the following steps:
  • Step S1 providing a substrate, forming a plurality of anodes arranged in an array on the substrate, forming a pixel defining layer on the substrate and the plurality of anodes, and forming respectively on the pixel defining layer Corresponding to a plurality of first openings above the plurality of anodes;
  • Step S2 forming an inverted ladder photoresist on the pixel definition layer corresponding to the plurality of first openings
  • Step S3 preparing an OLED luminescent film on the inverted ladder photoresist, the pixel defining layer and the plurality of anodes;
  • Step S4 stripping the inverted ladder photoresist, and removing the OLED light-emitting film located above the inverted ladder photoresist to obtain a plurality of unconnected OLED light-emitting layers;
  • Step S5 forming a cathode having a whole surface distribution on the plurality of OLED light emitting layers and the pixel defining layer;
  • Step S6 forming an auxiliary cathode corresponding to a plurality of first opening intervals on the cathode to obtain an OLED substrate;
  • Step S7 After packaging the OLED substrate, an OLED display is obtained.
  • the method for fabricating the OLED display specifically includes the following steps:
  • Step S1 providing a substrate, forming a plurality of anodes arranged in an array on the substrate, forming a pixel defining layer on the substrate and the plurality of anodes, and forming respectively on the pixel defining layer Corresponding to a plurality of first openings above the plurality of anodes and a second opening in the spaced regions of the plurality of first openings;
  • Step S2 forming an inverted ladder photoresist on the substrate on the bottom of the second opening
  • Step S3 preparing an OLED luminescent film on the inverted ladder photoresist, the pixel defining layer and the plurality of anodes;
  • Step S4 stripping the inverted ladder photoresist, and removing the OLED light-emitting film located above the inverted ladder photoresist to obtain a plurality of unconnected OLED light-emitting layers;
  • Step S5 forming a cathode distributed over the entire surface of the plurality of OLED light-emitting layers and the substrate;
  • Step S6 preparing an auxiliary cathode corresponding to the second opening on the cathode to obtain an OLED substrate
  • Step S7 After packaging the OLED substrate, an OLED display is obtained.
  • the method for fabricating the OLED display specifically includes the following steps:
  • Step S1 providing a base substrate on which a plurality of anodes arranged in an array and auxiliary cathodes located in spaced regions of the plurality of anodes are formed on the base substrate, the plurality of anodes and the auxiliary cathode Forming a pixel defining layer on the plurality of first openings corresponding to the plurality of anodes and corresponding to the second openings above the auxiliary cathodes;
  • Step S2 forming an inverted trapezoidal photoresist on the auxiliary cathode at the bottom of the second opening;
  • Step S3 preparing an OLED luminescent film on the inverted ladder photoresist, the pixel defining layer and the plurality of anodes;
  • Step S4 stripping the inverted ladder photoresist, and removing the OLED light-emitting film located above the inverted ladder photoresist to obtain a plurality of unconnected OLED light-emitting layers;
  • Step S5 forming a cathode distributed over the entire surface of the plurality of OLED light-emitting layers, the pixel defining layer and the auxiliary cathode to obtain an OLED substrate;
  • Step S6 After packaging the OLED substrate, an OLED display is obtained.
  • the inverted trapezoidal photoresist is distributed in a grid shape; the auxiliary cathodes are distributed in a grid shape.
  • the present invention also provides an OLED display, comprising an OLED substrate, the OLED substrate comprising: a substrate, a plurality of anodes arranged on the substrate, arranged in an array, and the substrate and the number a pixel defining layer on the anode, a plurality of first openings respectively disposed on the pixel defining layer and corresponding to the plurality of anodes, and a plurality of OLED light emitting layers respectively disposed on the plurality of anodes a plurality of cathodes on the OLED light-emitting layer and the pixel defining layer, and an auxiliary cathode disposed above or below the cathode and connected to the cathode; wherein the plurality of OLED light-emitting layers are not connected; the auxiliary cathode A spacing area corresponding to a plurality of anodes is provided.
  • the OLED substrate specifically includes: a substrate substrate, a plurality of anodes disposed on the substrate substrate and arranged in an array, and pixels disposed on the substrate substrate and the plurality of anodes a plurality of first OLEDs disposed on the pixel defining layer and corresponding to the plurality of anodes, and a plurality of OLED light emitting layers respectively disposed on the plurality of anodes, and the plurality of OLEDs are disposed on the OLEDs a cathode on the layer and the pixel defining layer and distributed over the entire surface, and an auxiliary cathode provided on the cathode.
  • the OLED substrate specifically includes: a substrate substrate, a plurality of anodes disposed on the substrate substrate and arranged in an array, and pixels disposed on the substrate substrate and the plurality of anodes Defining a layer, a plurality of first openings disposed on the pixel defining layer and corresponding to a plurality of anodes, a second opening disposed on the pixel defining layer and located in a spaced region of the plurality of first openings, a plurality of OLED light-emitting layers respectively disposed on the plurality of anodes, a cathode disposed on the plurality of OLED light-emitting layers and the pixel defining layer and distributed over the entire surface, and an auxiliary cathode disposed on the cathode pole.
  • the OLED substrate specifically includes: a substrate substrate, a plurality of anodes disposed on the substrate substrate and arranged in an array, and a spacer region disposed on the substrate substrate and located at the plurality of anodes
  • the auxiliary cathodes are distributed in a grid shape.
  • the present invention also provides a method for fabricating an OLED display, comprising: a step of fabricating an OLED substrate and a step of packaging the OLED substrate, wherein the step of fabricating the OLED substrate comprises: providing a substrate on which the substrate is formed Forming a plurality of anodes arranged in an array, forming a pixel defining layer on the substrate substrate and the plurality of anodes, and forming a plurality of first openings respectively corresponding to the plurality of anodes on the pixel defining layer, respectively Forming a plurality of OLED light-emitting layers on the plurality of anodes, forming a cathode on the plurality of OLED light-emitting layers and the pixel defining layer, and forming an auxiliary cathode connected to the cathode above or below the cathode; wherein a plurality of OLED light emitting layers are not connected; the auxiliary cathode is disposed corresponding to a plurality of anode spacing regions;
  • the specific steps include the following steps:
  • Step S1 providing a substrate, forming a plurality of anodes arranged in an array on the substrate, forming a pixel defining layer on the substrate and the plurality of anodes, and forming respectively on the pixel defining layer Corresponding to a plurality of first openings above the plurality of anodes;
  • Step S2 forming an inverted ladder photoresist on the pixel definition layer corresponding to the plurality of first openings
  • Step S3 preparing an OLED luminescent film on the inverted ladder photoresist, the pixel defining layer and the plurality of anodes;
  • Step S4 stripping the inverted ladder photoresist, and removing the OLED light-emitting film located above the inverted ladder photoresist to obtain a plurality of unconnected OLED light-emitting layers;
  • Step S5 forming a cathode having a whole surface distribution on the plurality of OLED light emitting layers and the pixel defining layer;
  • Step S6 forming an auxiliary cathode corresponding to a plurality of first opening intervals on the cathode to obtain an OLED substrate;
  • Step S7 after packaging the OLED substrate, obtaining an OLED display
  • the inverted ladder photoresist is distributed in a grid shape; the auxiliary cathodes are distributed in a grid shape.
  • the method for fabricating the OLED display of the present invention is provided in several
  • the inverted trapezoidal photoresist of the spacer region of the sub-pixel realizes the effect that several OLED light-emitting layers are not connected, and the obtained OLED display does not have lateral leakage of the common layer, thereby avoiding the carrier being between adjacent sub-pixels.
  • the cross-color phenomenon caused by the migration ensures that the OLED display has a better display effect; and by forming the auxiliary cathode connected thereto above or below the cathode, the sheet resistance of the cathode can be reduced, and the uneven brightness caused by the voltage drop can be alleviated.
  • the OLED display of the invention is prepared by the above method, and the lateral leakage of the common layer does not occur, and the cross-color phenomenon caused by the migration of the carriers between adjacent sub-pixels is avoided, and the OLED display has a better display effect. Its cathode has a low sheet resistance, which can alleviate the problem of uneven brightness caused by voltage drop.
  • 1 is a schematic view showing lateral leakage of a common layer of a conventional OLED display
  • FIG. 2 is a flow chart of a first embodiment of a method of fabricating an OLED display of the present invention
  • step S2 is a schematic diagram of step S2 of the first embodiment of the method for fabricating an OLED display of the present invention
  • step S3 is a schematic diagram of step S3 of the first embodiment of the method for fabricating an OLED display of the present invention.
  • step S4 is a schematic diagram of step S4 of the first embodiment of the method for fabricating an OLED display of the present invention.
  • step S5 is a schematic diagram of step S5 of the first embodiment of the method for fabricating an OLED display of the present invention.
  • step S6 is a schematic diagram of step S6 of the first embodiment of the method for fabricating an OLED display of the present invention.
  • FIG. 9 is a schematic diagram of a step S7 of the first embodiment of the method for fabricating an OLED display of the present invention. and a schematic structural view of the first embodiment of the OLED display of the present invention;
  • FIG. 10 is a flow chart of a second embodiment of a method of fabricating an OLED display of the present invention.
  • FIG. 11 is a diagram showing the step S1 of the second embodiment of the method for fabricating an OLED display of the present invention. intention;
  • step S2 is a schematic diagram of step S2 of the second embodiment of the method for fabricating an OLED display of the present invention.
  • step S3 of the second embodiment of the method for fabricating an OLED display of the present invention is a schematic diagram of step S3 of the second embodiment of the method for fabricating an OLED display of the present invention.
  • step S4 is a schematic diagram of step S4 of the second embodiment of the method for fabricating an OLED display of the present invention.
  • step S5 is a schematic diagram of step S5 of the second embodiment of the method for fabricating an OLED display of the present invention.
  • step S6 is a schematic diagram of step S6 of the second embodiment of the method for fabricating an OLED display of the present invention.
  • FIG. 17 is a schematic diagram of a step S7 of a second embodiment of the method for fabricating an OLED display of the present invention. and a schematic structural view of a second embodiment of the OLED display of the present invention;
  • FIG. 18 is a flow chart of a third embodiment of a method of fabricating an OLED display of the present invention.
  • step S1 of the third embodiment of the method for fabricating an OLED display of the present invention is a schematic diagram of step S1 of the third embodiment of the method for fabricating an OLED display of the present invention.
  • step S2 of the third embodiment of the method for fabricating an OLED display of the present invention is a schematic diagram of step S2 of the third embodiment of the method for fabricating an OLED display of the present invention.
  • step S3 is a schematic diagram of step S3 of the third embodiment of the method for fabricating an OLED display of the present invention.
  • step S4 is a schematic diagram of step S4 of the third embodiment of the method for fabricating an OLED display of the present invention.
  • step S5 is a schematic diagram of step S5 of the third embodiment of the method for fabricating an OLED display of the present invention.
  • FIG. 24 is a schematic diagram of step S6 of the third embodiment of the method for fabricating an OLED display of the present invention and a schematic structural view of a third embodiment of the OLED display of the present invention.
  • the present invention provides a method for fabricating an OLED display, comprising the following steps:
  • Step S1 as shown in FIG. 3, a base substrate 10 is provided, on which a plurality of anodes 21 arranged in an array are formed, and pixels are formed on the base substrate 10 and a plurality of anodes 21
  • the layer 30 is defined, and a plurality of first openings 31 respectively corresponding to the plurality of anodes 21 are formed on the pixel defining layer 30.
  • the base substrate 10 is a TFT substrate.
  • the step S1 further includes forming a flat layer (not shown) between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21, respectively.
  • the plurality of anodes 21 are reflective electrodes, and the OLED display produced by the present invention is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • Step S2 as shown in FIG. 4, an inverted trapezoidal photoresist 60 is formed on the pixel defining layer 30 corresponding to the spaced regions of the plurality of first openings 31.
  • the inverted ladder photoresist 60 is distributed in a grid shape.
  • the method for preparing the inverted ladder photoresist 60 includes: photoresist coating, pre-bake, exposure, post exposure bake (PEB), development, And post-bake (Post bake).
  • the photoresist patterning process generally includes: photoresist coating, pre-bake, exposure, development, and post bake.
  • the method for preparing the inverted ladder photoresist 60 of the present invention increases the Post Exposure Bake (PEB) process between the exposure and development processes to ensure the obtained
  • PEB Post Exposure Bake
  • Step S3 as shown in FIG. 5, an OLED light-emitting film 41 is prepared on the inverted ladder photoresist 60, the pixel defining layer 30, and the plurality of anodes 21.
  • the OLED luminescent film 41 is prepared by an evaporation or inkjet printing (Ink-Jet print) process.
  • the OLED light-emitting film 41 is fabricated by using an open mask, which is a mask having only one opening in the middle, and the manufacturing cost is low, and the invention is low in cost.
  • the OLED light-emitting film 41 is fabricated using an open mask, which can greatly reduce the production cost compared to a process using a precision mask.
  • Step S4 as shown in FIG. 6, the inverted ladder photoresist 60 is peeled off, and the OLED light-emitting film 41 located above the inverted trapezoidal photoresist 60 is removed, thereby obtaining a plurality of unconnected OLED light-emitting layers 40.
  • the inverted ladder photoresist 60 is stripped using a photoresist removal solvent.
  • the OLED light emitting layer 40 is sequentially disposed on the anode 21 from bottom to top.
  • the hole injection layer, the hole transport layer, the light-emitting layer, the electron transport layer, and the electron injection layer are disposed.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is a red/green/blue luminescent layer.
  • Step S5 as shown in FIG. 7, a cathode 50 having a whole surface distribution is formed on the plurality of OLED light-emitting layers 40 and the pixel defining layer 30.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO), and the transparent oxide is preferably indium zinc oxide (IZO), and the thickness of the cathode 50 is between 100 nm and 500 nm.
  • TCO transparent oxide
  • the cathode 50 is prepared by a sputtering method.
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • the cathode 50 is prepared by an evaporation method.
  • Step S6 as shown in FIG. 8, an auxiliary cathode 22 corresponding to a plurality of spaced regions of the first openings 31 is formed on the cathode 50 to produce an OLED substrate 80.
  • the sheet resistance of the cathode 50 can be reduced, and the luminance unevenness caused by the IR drop can be alleviated; since the auxiliary cathode 22 corresponds to the plurality of first openings 31
  • the spacer region can ensure that the thickness of the cathode 50 located in the sub-pixel region is not affected, and the cathode 50 located in the sub-pixel region is ensured to have high transparency and a high light extraction rate.
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the preparation method of the auxiliary cathode 22 includes printing a conductive ink (ink) by inkjet printing or nozzle printing, and forming an auxiliary cathode 22 after drying and solidification.
  • the conductive ink is a nano silver paste, a nano copper paste or a carbon nanotube solution.
  • the conductive ink is printed on the cathode 50 corresponding to the position of the original inverted trapezoidal photoresist 60, and dried and solidified to form the auxiliary cathode 22.
  • Step S7 as shown in FIG. 9, after the OLED substrate 80 is packaged, the OLED display 200 is obtained.
  • the step S7 includes: providing the package cover 90 and the encapsulant 91, applying the encapsulant 91 to the package cover 90 or the OLED substrate 80, and combining the package cover 90 and the OLED substrate 80. After the encapsulant 91 is cured, the OLED display 200 is obtained.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the method for fabricating the OLED display first forms an inverted trapezoidal photoresist 60 corresponding to the interval regions of the plurality of first openings 31, and then performs the fabrication of the OLED light-emitting film 41, and then removes the inverted ladder photoresist 60 and is located in the inverted ladder lithography.
  • the OLED light-emitting film 41 on the glue 60 obtains a plurality of OLED light-emitting layers 40 that are not connected, and the lateral leakage of the common layer does not occur, thereby avoiding the cross-color phenomenon caused by the migration of the carriers between adjacent sub-pixels.
  • the OLED display has a better display effect; and by providing the auxiliary cathode 22 connected thereto above the cathode 50, the sheet resistance of the cathode 50 can be reduced, and the problem of uneven brightness caused by the voltage drop (IR drop) can be alleviated.
  • the present invention further provides an OLED display 200, including an OLED substrate 80, the OLED substrate 80 includes: a substrate substrate 10 disposed on the substrate substrate 10 and in an array. a plurality of anodes 21 arranged, a pixel defining layer 30 disposed on the base substrate 10 and the plurality of anodes 21, and a plurality of pixels defined on the pixel defining layer 30 and corresponding to the plurality of anodes 21
  • the OLED display 200 further includes: a package cover 90 disposed opposite to the OLED substrate 80, and disposed between the OLED substrate 80 and the package cover 90 for performing the OLED substrate 80 and the package cover 90 Sealing the connected encapsulant 91.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the base substrate 10 is a TFT substrate.
  • the OLED substrate 80 further includes a flat layer (not shown) disposed between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21, respectively.
  • the plurality of anodes 21 are reflective electrodes, and the OLED display of the present invention is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • the OLED light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from the bottom to the top of the anode 21.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is a red/green/blue luminescent layer.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO), and the transparent oxide is preferably indium zinc oxide (IZO), and the thickness of the cathode 50 is between 100 nm and 500 nm.
  • TCO transparent oxide
  • IZO indium zinc oxide
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the material of the auxiliary cathode 22 is nano silver, nano copper or carbon nanotubes.
  • the OLED display includes a plurality of OLED light-emitting layers 40 respectively disposed on the plurality of anodes 21, wherein the plurality of OLED light-emitting layers 40 are not connected, so that lateral leakage of the common layer does not occur, and the carrier is avoided in the phase.
  • the cross-color phenomenon caused by the migration between adjacent sub-pixels ensures that the OLED display has a better display effect; and by providing the auxiliary cathode 22 connected thereto above the cathode 50, the sheet resistance of the cathode 50 can be reduced, and the voltage drop can be reduced (IR drop) ) caused by uneven brightness.
  • the present invention provides a method for fabricating an OLED display, comprising the following steps:
  • Step S1 as shown in FIG. 11, a base substrate 10 is provided, on which a plurality of anodes 21 arranged in an array are formed, and pixel definitions are formed on the base substrate 10 and a plurality of anodes 21
  • the layer 30 has a plurality of first openings 31 corresponding to the plurality of anodes 21 and second openings 32 located in the spaced regions of the plurality of first openings 31, respectively, on the pixel defining layer 30.
  • the second openings 32 are distributed in a grid shape.
  • the base substrate 10 is a TFT substrate.
  • the step S1 further includes forming a flat layer (not shown) between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21, respectively.
  • the plurality of anodes 21 are all reflective electrodes, and the OLEDs obtained by the invention are subsequently displayed.
  • the display is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • Step S2 as shown in FIG. 12, an inverted trapezoidal photoresist 60 is formed on the base substrate 10 at the bottom of the second opening 32.
  • the inverted ladder photoresist 60 is distributed in a grid shape.
  • the method for preparing the inverted ladder photoresist 60 includes: photoresist coating, pre-bake, exposure, post exposure bake (PEB), development, And post-bake (Post bake).
  • the photoresist patterning process generally includes: photoresist coating, pre-bake, exposure, development, and post bake.
  • the method for preparing the inverted ladder photoresist 60 of the present invention increases the Post Exposure Bake (PEB) process between the exposure and development processes to ensure the obtained
  • PEB Post Exposure Bake
  • Step S3 as shown in FIG. 13, an OLED light-emitting film 41 is prepared on the inverted ladder photoresist 60, the pixel defining layer 30, and the plurality of anodes 21.
  • the OLED luminescent film 41 is prepared by an evaporation or inkjet printing (Ink-Jet print) process.
  • the OLED light-emitting film 41 is fabricated by using an open mask, which is a mask having only one opening in the middle, and the manufacturing cost is low, and the invention is low in cost.
  • the OLED light-emitting film 41 is fabricated using an open mask, which can greatly reduce the production cost compared to a process using a precision mask.
  • Step S4 as shown in FIG. 14, the inverted ladder photoresist 60 is peeled off, and the OLED light-emitting film 41 located above the inverted trapezoidal photoresist 60 is removed, thereby obtaining a plurality of unconnected OLED light-emitting layers 40.
  • the inverted ladder photoresist 60 is stripped using a photoresist removal solvent.
  • the OLED light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from the bottom to the top of the anode 21.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is a red/green/blue luminescent layer.
  • Step S5 as shown in FIG. 15, a cathode 50 having a uniform surface distribution is formed on the plurality of OLED light-emitting layers 40 and the base substrate 10.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO).
  • the transparent oxide is preferably indium zinc oxide (IZO), and the cathode 50 has a thickness of between 100 nm and 500 nm.
  • the cathode 50 is prepared by a sputtering method.
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • the cathode 50 is prepared by an evaporation method.
  • Step S6 as shown in FIG. 16, an auxiliary cathode 22 corresponding to the second opening 32 is formed on the cathode 50 to produce an OLED substrate 80.
  • the sheet resistance of the cathode 50 can be reduced, and the unevenness of brightness caused by the voltage drop (IR drop) can be alleviated; since the auxiliary cathode 22 is disposed corresponding to the second opening 32, It is ensured that the thickness of the cathode 50 located in the sub-pixel region is not affected, ensuring that the cathode 50 located in the sub-pixel region has a high transparency and a high light extraction rate.
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the preparation method of the auxiliary cathode 22 includes printing a conductive ink (ink) by inkjet printing or nozzle printing, and forming an auxiliary cathode 22 after drying and solidification.
  • the conductive ink is a nano silver paste, a nano copper paste, or a carbon nanotube solution.
  • the conductive ink is printed on the cathode 50 corresponding to the position of the original inverted trapezoidal photoresist 60, and dried and solidified to form the auxiliary cathode 22.
  • Step S7 as shown in FIG. 17, after the OLED substrate 80 is packaged, the OLED display 200 is obtained.
  • the step S7 includes: providing the package cover 90 and the encapsulant 91, applying the encapsulant 91 to the package cover 90 or the OLED substrate 80, and combining the package cover 90 and the OLED substrate 80. After the encapsulant 91 is cured, the OLED display 200 is obtained.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the method for fabricating the OLED display first forms a second opening 32 corresponding to the interval region of the plurality of first openings 31, and the inverted trapezoidal photoresist 60 is formed in the second opening 32, and then the OLED light-emitting film 41 is fabricated and then removed.
  • the inverted ladder photoresist 60 and the OLED light-emitting film 41 on the inverted ladder photoresist 60 obtain a plurality of OLED light-emitting layers 40 that are not connected, and no commonality occurs.
  • the auxiliary cathode 22 connected thereto is formed by the cathode 50, It is possible to reduce the sheet resistance of the cathode 50 and to alleviate the problem of uneven brightness caused by the voltage drop (IR drop).
  • the present invention further provides an OLED display 200 including an OLED substrate 80 , the OLED substrate 80 including: a substrate substrate 10 disposed on the substrate substrate 10 and in an array. a plurality of anodes 21 arranged, a pixel defining layer 30 disposed on the base substrate 10 and the plurality of anodes 21, and a plurality of pixels defined on the pixel defining layer 30 and corresponding to the plurality of anodes 21
  • the OLED display 200 further includes: a package cover 90 disposed opposite to the OLED substrate 80, and disposed between the OLED substrate 80 and the package cover 90 for performing the OLED substrate 80 and the package cover 90 Sealing the connected encapsulant 91.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the second openings 32 are distributed in a grid shape.
  • the base substrate 10 is a TFT substrate.
  • the OLED substrate 80 further includes a flat layer (not shown) disposed between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21, respectively.
  • the plurality of anodes 21 are reflective electrodes, and the OLED display of the present invention is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • the OLED light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from the bottom to the top of the anode 21.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is red/green/blue Light emitting layer.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO), and the transparent oxide is preferably indium zinc oxide (IZO), and the thickness of the cathode 50 is between 100 nm and 500 nm.
  • TCO transparent oxide
  • IZO indium zinc oxide
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the material of the auxiliary cathode 22 is nano silver, nano copper or carbon nanotubes.
  • the OLED display includes a plurality of OLED light-emitting layers 40 respectively disposed on the plurality of anodes 21, wherein the plurality of OLED light-emitting layers 40 are not connected, so that lateral leakage of the common layer does not occur, and the carrier is avoided in the phase.
  • the cross-color phenomenon caused by the migration between adjacent sub-pixels ensures that the OLED display has a better display effect; and by providing the auxiliary cathode 22 connected thereto above the cathode 50, the sheet resistance of the cathode 50 can be reduced, and the voltage drop can be reduced (IR drop) ) caused by uneven brightness.
  • the present invention provides a method for fabricating an OLED display, comprising the following steps:
  • Step S1 as shown in FIG. 19, a base substrate 10 is provided, on which a plurality of anodes 21 arranged in an array and auxiliary cathodes 22 located in spaced regions of a plurality of anodes 21 are formed on the substrate substrate 10, A pixel defining layer 30 is formed on the substrate substrate 10, the plurality of anodes 21 and the auxiliary cathode 22, and a plurality of first openings 31 corresponding to the plurality of anodes 21 and corresponding to the auxiliary cathodes are formed on the pixel defining layer 30, respectively. A second opening 32 above 22.
  • the plurality of anodes 21 are reflective electrodes, and the OLED display produced by the present invention is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the auxiliary cathode 22 is fabricated by a photolithography process.
  • the material of the auxiliary cathode 22 includes one or more of metals such as silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo).
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the second openings 32 are distributed in a grid shape.
  • the base substrate 10 is a TFT substrate.
  • the step S1 further includes forming a flat layer (not shown) between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21, respectively.
  • Step S2 as shown in FIG. 20, an inverted trapezoidal photoresist 60 is formed on the auxiliary cathode 22 at the bottom of the second opening 32.
  • the inverted ladder photoresist 60 is distributed in a grid shape.
  • the method for preparing the inverted ladder photoresist 60 includes: photoresist coating, pre-bake, exposure, post exposure bake (PEB), development, And post-bake (Post bake).
  • the photoresist patterning process generally includes: photoresist coating, pre-bake, exposure, development, and post bake.
  • the method for preparing the inverted ladder photoresist 60 of the present invention increases the Post Exposure Bake (PEB) process between the exposure and development processes to ensure the obtained
  • PEB Post Exposure Bake
  • Step S3 as shown in FIG. 21, an OLED light-emitting film 41 is prepared on the inverted ladder photoresist 60, the pixel defining layer 30, and the plurality of anodes 21.
  • the OLED luminescent film 41 is prepared by an evaporation or inkjet printing (Ink-Jet print) process.
  • the OLED light-emitting film 41 is fabricated by using an open mask, which is a mask having only one opening in the middle, and the manufacturing cost is low, and the invention is low in cost.
  • the OLED light-emitting film 41 is fabricated using an open mask, which can greatly reduce the production cost compared to a process using a precision mask.
  • Step S4 as shown in FIG. 22, the inverted ladder photoresist 60 is peeled off, and the OLED light-emitting film 41 located above the inverted trapezoidal photoresist 60 is removed, thereby obtaining a plurality of unconnected OLED light-emitting layers 40.
  • the inverted ladder photoresist 60 is stripped using a photoresist removal solvent.
  • the OLED light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from the bottom to the top of the anode 21.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is a red/green/blue luminescent layer.
  • Step S5 as shown in FIG. 23, a cathode 50 having a whole surface distribution is formed on the plurality of OLED light-emitting layers 40, the pixel defining layer 30, and the auxiliary cathode 22 to obtain an OLED substrate 80.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO), and the transparent oxide is preferably indium zinc oxide (IZO), and the thickness of the cathode 50 is between 100 nm and 500 nm.
  • TCO transparent oxide
  • the cathode 50 is prepared by a sputtering method.
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • the cathode 50 is prepared by an evaporation method.
  • the sheet resistance of the cathode 50 can be reduced, and the unevenness of brightness caused by the voltage drop (IR drop) can be alleviated; since the auxiliary cathode 22 is disposed corresponding to the second opening 32, the positioning can be ensured.
  • the thickness of the cathode 50 of the pixel region is not affected, ensuring that the cathode 50 located in the sub-pixel region has a higher transparency and a higher light extraction rate.
  • Step S6 as shown in FIG. 24, after the OLED substrate 80 is packaged, the OLED display 200 is obtained.
  • the step S6 includes: providing the package cover 90 and the encapsulant 91, applying the encapsulant 91 to the package cover 90 or the OLED substrate 80, and aligning the package cover 90 with the OLED substrate 80. After the encapsulant 91 is cured, the OLED display 200 is obtained.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the method for fabricating the OLED display first forms a second opening 32 corresponding to the interval region of the plurality of first openings 31, and the inverted trapezoidal photoresist 60 is formed in the second opening 32, and then the OLED light-emitting film 41 is fabricated and then removed.
  • the inverted ladder photoresist 60 and the OLED light-emitting film 41 on the inverted ladder photoresist 60 obtain a plurality of OLED light-emitting layers 40 that are not connected, and the lateral leakage of the common layer does not occur, thereby avoiding the carrier being in phase.
  • the cross-color phenomenon caused by the migration between adjacent sub-pixels ensures that the OLED display has a better display effect; and by forming the auxiliary cathode 22 connected thereto under the cathode 50, the sheet resistance of the cathode 50 can be reduced, and the voltage drop can be reduced (IR drop) ) caused by uneven brightness.
  • the present invention further provides an OLED display comprising an OLED substrate 80, the OLED substrate 80 comprising: a substrate substrate 10 disposed on the substrate substrate 10 and arranged in an array. a plurality of anodes 21 of the cloth, an auxiliary cathode 22 disposed on the base substrate 10 and located in a spaced region of the plurality of anodes 21, and the base substrate 10, a pixel defining layer 30 on the anode 21 and the auxiliary cathode 22, and a plurality of first openings 31 disposed on the pixel defining layer 30 and corresponding to the plurality of anodes 21 respectively disposed on the pixel defining layer 30 And corresponding to the second opening 32 above the auxiliary cathode 22, the plurality of OLED light emitting layers 40 respectively disposed on the plurality of anodes 21, and the plurality of OLED light emitting layers 40, the pixel defining layer 30 and the auxiliary cathode
  • the cathode 50 is distributed over the entire surface of the cathode 50; where
  • the OLED display 200 further includes: a package cover 90 disposed opposite to the OLED substrate 80, and disposed between the OLED substrate 80 and the package cover 90 for performing the OLED substrate 80 and the package cover 90 Sealing the connected encapsulant 91.
  • the package cover 90 is a glass substrate or a glass substrate having a color filter.
  • the glass substrate is used in conjunction with an OLED substrate 80 having an RGB side-by side structure; the glass substrate with a color filter for use with an OLED substrate 80 having a White OLED structure.
  • the plurality of anodes 21 are reflective electrodes, and the OLED display of the present invention is a top-emitting OLED display.
  • the plurality of anodes 21 are composite layers composed of two layers of transparent conductive oxide film sandwiched by a metal film.
  • the material of the transparent conductive oxide film comprises indium tin oxide (ITO), and the material of the metal film includes silver (Ag).
  • auxiliary cathodes 22 are distributed in a grid shape.
  • the material of the auxiliary cathode 22 includes one or more of metals such as silver (Ag), copper (Cu), aluminum (Al), and molybdenum (Mo).
  • the auxiliary cathode 22 has a thickness of 0.5 ⁇ m to 10 ⁇ m.
  • the second openings 32 are distributed in a grid shape.
  • the base substrate 10 is a TFT substrate.
  • the OLED substrate 80 further includes a flat layer (not shown) disposed between the base substrate 10 and the plurality of anodes 21.
  • the areas of the plurality of first openings 31 are smaller than the areas of the plurality of anodes 21; the area of the second openings 32 is smaller than the area of the auxiliary cathodes 22.
  • the OLED light-emitting layer 40 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer which are disposed in this order from the bottom to the top of the anode 21.
  • the light emitting layer is a white light emitting layer.
  • the luminescent layer is a red/green/blue luminescent layer.
  • the cathode 50 is a transparent electrode or a translucent electrode.
  • the material of the cathode 50 is a transparent oxide (TCO).
  • TCO transparent oxide
  • the transparent oxide is preferably indium zinc oxide (IZO), and the cathode 50 has a thickness of between 100 nm and 500 nm.
  • the material of the cathode 50 is a metal, and the metal is preferably silver (Ag) or magnesium silver alloy (MgAg), and the thickness of the cathode 50 is between 10 nm and 20 nm;
  • the translucent electrode has a light transmittance of 40% or more.
  • the OLED display includes a plurality of OLED light-emitting layers 40 respectively disposed on the plurality of anodes 21, wherein the plurality of OLED light-emitting layers 40 are not connected, so that lateral leakage of the common layer does not occur, and the carrier is avoided in the phase.
  • the cross-color phenomenon caused by the migration between adjacent sub-pixels ensures that the OLED display has a better display effect; and by providing the auxiliary cathode 22 connected thereto under the cathode 50, the sheet resistance of the cathode 50 can be reduced, and the voltage drop can be reduced (IR drop) ) caused by uneven brightness.
  • the "interval region corresponding to the plurality of first openings 31”, the “interval region corresponding to the plurality of first openings 31", and the “corresponding to the second opening 32" are three
  • the expressions refer to the same meaning, and both represent “interval regions corresponding to a plurality of sub-pixels”.
  • the inverted trapezoidal photoresist 60 is linearly distributed in the interval region of a plurality of sub-pixels.
  • the OLED light-emitting film 41 is only in one direction (ie, The direction perpendicular to the extending direction of the inverted ladder photoresist 60 is blocked.
  • the interval area of adjacent sub-pixels can be increased.
  • the resistance of the OLED light-emitting film 41 at the interval region of the adjacent sub-pixels is increased to prevent the carriers from flowing between the adjacent sub-pixels, thereby preventing the occurrence of cross-color phenomenon.
  • the auxiliary cathode may be disposed in the TFT substrate, and disposed on the same layer as the source drain or the gate, the sheet resistance of the cathode 50 may be more significantly reduced, and the voltage drop may be reduced ( IR uneven) causes uneven brightness and improves display.
  • the present invention provides an OLED display and a method of fabricating the same.
  • the method for fabricating the OLED display of the present invention realizes the effect that several OLED light-emitting layers are disconnected by using an inverted trapezoidal photoresist disposed in a spacer region of a plurality of sub-pixels, and the OLED display produced does not have a lateral leakage of the common layer.
  • the cross-color phenomenon caused by the migration of the carriers between adjacent sub-pixels is avoided, and the OLED display is ensured to have a better display effect; and the cathode resistance of the cathode can be reduced by fabricating an auxiliary cathode connected thereto above or below the cathode. To alleviate the problem of uneven brightness caused by voltage drop.
  • the OLED display of the invention is prepared by the above method, and the lateral leakage of the common layer does not occur, and the cross-color phenomenon caused by the migration of the carriers between adjacent sub-pixels is avoided, and the OLED display has a better display effect. Its cathode has a low sheet resistance, which can alleviate the problem of uneven brightness caused by voltage drop.

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Abstract

本发明提供一种OLED显示器及其制作方法。本发明的OLED显示器的制作方法利用设于数个子像素的间隔区域的倒梯形光刻胶实现数个OLED发光层不相连的效果，制得的OLED显示器不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极的上方或者下方制作与其相连的辅助阴极，能够降低阴极的方块电阻，减轻电压降引起的亮度不均问题。本发明的OLED显示器采用上述方法制得，不会出现串色现象，具有较好的显示效果，其阴极的上方或者下方设有与其相连的辅助阴极，能够降低阴极的方块电阻，减轻电压降引起的亮度不均问题。

Description

OLED显示器及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示器及其制作方法。
背景技术
有机发光二极管显示装置(Organic Light Emitting Display，OLED)具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
OLED通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
AMOLED显示器包括底发光型OLED显示器(由TFT基板侧出光)与顶发光型OLED显示器(由封装盖板侧出光)两种，由于顶发光型OLED显示器的OLED光源需要穿透阴极，因此必须采用透明阴极或者半透明阴极，现有的透明阴极多使用透明氧化物(TCO)，例如氧化铟锌(IZO)，透明阴极的厚度范围在100nm～500nm之间，方块电阻在5Ω/□～30Ω/□之间。半透明阴极多使用厚度较薄的金属，例如银(Ag)、镁银合金(MgAg)等，为保持40％以上的光穿透率，半透明阴极的厚度一般控制在10nm～20nm之间，方块电阻在1Ω/□～5Ω/□之间。然而，具有以上电阻值的透明阴极与半 透明阴极只适合在小尺寸显示器中使用，在大尺寸显示器中使用时会因为阴极的方块电阻过高而产生电压降(IR drop)，而导致显示器出现亮度不均匀的现象，并且离阴极电压输入端越远的地方亮度越低。另外，无论是发光层发白光的OLED器件(White OLED结构)或者发光层发红绿蓝光的OLED器件(RGB side-by side)，都具有一些共通层(common layer)，如空穴注入层(HIL)、空穴传输层(HTL)、电子传输层(ETL)、电子注入层(EIL)、及载子产生层(CGL)等，这些共通层均利用开放式掩膜板(Open mask)制作，覆盖所有子像素区域与子像素之间的间隔区域，由于有些共通层的材料的载子传输性较佳，载子会在这些共通层中侧向传导，使共通层产生侧向漏电，当一个子像素点亮时，与其相邻的子像素容易受到该子像素内的电流影响，导致其亮度不可控，从而出现串色现象。
图1为现有的OLED基板的共通层侧向漏电的示意图，如图1所示，该OLED基板中的OLED发光层100为白光发光层，所述OLED基板的所有子像素的OLED发光层100(包括空穴注入层、空穴传输层、发光层、电子传输层及电子注入层)相互连通，呈现为共通层，当OLED发光层100内部出现侧向漏电时，载子在OLED发光层100中侧向移动，从一个子像素移至相邻的子像素中，对相邻的子像素的发光造成影响，导致该相邻子像素的亮度不可控，该OLED基板与彩色滤光片配合实现画面显示时，容易出现串色现象。
发明内容
本发明的目的在于提供一种OLED显示器的制作方法，制得的OLED显示器不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且能够减轻电压降引起的亮度不均问题。
本发明的目的还在于提供一种OLED显示器，不会出现串色现象，具有较好的显示效果，其阴极的上方或者下方设有与其相连的辅助阴极，能够减轻电压降引起的亮度不均问题。
为实现上述目的，本发明提供一种OLED显示器的制作方法，包括：制作OLED基板的步骤及对OLED基板进行封装的步骤，其中，制作OLED基板的步骤包括：提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口，分别在所述数个阳极上形成数个OLED发光层，在所述数个OLED发光层及像素定义层上形成 阴极，在所述阴极的上方或者下方制作与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置。
在本发明第一实施例中，所述OLED显示器的制作方法具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口；
步骤S2、在所述像素定义层上对应于数个第一开口的间隔区域形成倒梯形光刻胶；
步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
步骤S5、在所述数个OLED发光层及像素定义层上形成整面分布的阴极；
步骤S6、在所述阴极上制作对应于数个第一开口的间隔区域的辅助阴极，制得OLED基板；
步骤S7、对所述OLED基板进行封装后，得到OLED显示器。
在本发明第二实施例中，所述OLED显示器的制作方法具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口以及位于数个第一开口的间隔区域内的第二开口；
步骤S2、在所述第二开口底部的衬底基板上形成倒梯形光刻胶；
步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
步骤S5、在所述数个OLED发光层及衬底基板上形成整面分布的阴极；
步骤S6、在所述阴极上制作对应于第二开口的辅助阴极，制得OLED基板；
步骤S7、对所述OLED基板进行封装后，得到OLED显示器。
在本发明第三实施例中，所述OLED显示器的制作方法具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极及位于数个阳极的间隔区域内的辅助阴极，在所述衬底基板、数个阳极及辅助阴极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口以及对应于辅助阴极上方的第二开口；
步骤S2、在所述第二开口底部的辅助阴极上形成倒梯形光刻胶；
步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
步骤S5、在所述数个OLED发光层、像素定义层及辅助阴极上形成整面分布的阴极，制得OLED基板；
步骤S6、对所述OLED基板进行封装后，得到OLED显示器。
所述倒梯形光刻胶呈网格状分布；所述辅助阴极呈网格状分布。
本发明还提供一种OLED显示器，包括OLED基板，所述OLED基板包括：衬底基板、设于所述衬底基板上形成呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上的阴极、以及设于所述阴极的上方或者下方且与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置。
在本发明第一实施例中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上且整面分布的阴极、以及设于所述阴极上的辅助阴极。
在本发明第二实施例中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、设于所述像素定义层上且位于数个第一开口的间隔区域内的第二开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上且整面分布的阴极、以及设于所述阴极上的辅助阴 极。
在本发明第三实施例中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于衬底基板上且位于数个阳极的间隔区域内的辅助阴极、设于所述衬底基板、数个阳极及辅助阴极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、设于所述像素定义层上且对应于辅助阴极上方的第二开口、分别设于所述数个阳极上的数个OLED发光层、以及设于所述数个OLED发光层、像素定义层及辅助阴极上且整面分布的阴极。
所述辅助阴极呈网格状分布。
本发明还提供一种OLED显示器的制作方法，包括：制作OLED基板的步骤及对OLED基板进行封装的步骤，其中，制作OLED基板的步骤包括：提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口，分别在所述数个阳极上形成数个OLED发光层，在所述数个OLED发光层及像素定义层上形成阴极，在所述阴极的上方或者下方制作与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置；
其中，具体包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口；
步骤S2、在所述像素定义层上对应于数个第一开口的间隔区域形成倒梯形光刻胶；
步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
步骤S5、在所述数个OLED发光层及像素定义层上形成整面分布的阴极；
步骤S6、在所述阴极上制作对应于数个第一开口的间隔区域的辅助阴极，制得OLED基板；
步骤S7、对所述OLED基板进行封装后，得到OLED显示器；
其中，所述倒梯形光刻胶呈网格状分布；所述辅助阴极呈网格状分布。
本发明的有益效果：本发明的OLED显示器的制作方法利用设于数个 子像素的间隔区域的倒梯形光刻胶实现数个OLED发光层不相连的效果，制得的OLED显示器不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极的上方或者下方制作与其相连的辅助阴极，能够降低阴极的方块电阻，减轻电压降引起的亮度不均问题。本发明的OLED显示器采用上述方法制得，不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，OLED显示器具有较好的显示效果，其阴极具有较低的方块电阻，能够减轻电压降引起的亮度不均问题。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的OLED显示器的共通层侧向漏电的示意图；
图2为本发明的OLED显示器的制作方法第一实施例的流程图；
图3为本发明的OLED显示器的制作方法第一实施例的步骤S1的示意图；
图4为本发明的OLED显示器的制作方法第一实施例的步骤S2的示意图；
图5为本发明的OLED显示器的制作方法第一实施例的步骤S3的示意图；
图6为本发明的OLED显示器的制作方法第一实施例的步骤S4的示意图；
图7为本发明的OLED显示器的制作方法第一实施例的步骤S5的示意图；
图8为本发明的OLED显示器的制作方法第一实施例的步骤S6的示意图；
图9为本发明的OLED显示器的制作方法第一实施例的步骤S7的示意图及本发明的OLED显示器第一实施例的结构示意图；
图10为本发明的OLED显示器的制作方法第二实施例的流程图；
图11为本发明的OLED显示器的制作方法第二实施例的步骤S1的示 意图；
图12为本发明的OLED显示器的制作方法第二实施例的步骤S2的示意图；
图13为本发明的OLED显示器的制作方法第二实施例的步骤S3的示意图；
图14为本发明的OLED显示器的制作方法第二实施例的步骤S4的示意图；
图15为本发明的OLED显示器的制作方法第二实施例的步骤S5的示意图；
图16为本发明的OLED显示器的制作方法第二实施例的步骤S6的示意图；
图17为本发明的OLED显示器的制作方法第二实施例的步骤S7的示意图及本发明的OLED显示器第二实施例的结构示意图；
图18为本发明的OLED显示器的制作方法第三实施例的流程图；
图19为本发明的OLED显示器的制作方法第三实施例的步骤S1的示意图；
图20为本发明的OLED显示器的制作方法第三实施例的步骤S2的示意图；
图21为本发明的OLED显示器的制作方法第三实施例的步骤S3的示意图；
图22为本发明的OLED显示器的制作方法第三实施例的步骤S4的示意图；
图23为本发明的OLED显示器的制作方法第三实施例的步骤S5的示意图；
图24为本发明的OLED显示器的制作方法第三实施例的步骤S6的示意图及本发明的OLED显示器第三实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明提供一种OLED显示器的制作方法，包括如下步骤：
步骤S1、如图3所示，提供衬底基板10，在所述衬底基板10上形成呈阵列排布的数个阳极21，在所述衬底基板10与数个阳极21上形成像素 定义层30，在所述像素定义层30上形成分别对应于数个阳极21上方的数个第一开口31。
具体的，所述衬底基板10为TFT基板。
具体的，所述步骤S1还包括：在所述衬底基板10和数个阳极21之间形成平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积。
具体的，所述数个阳极21均为反射电极，本发明后续制得的OLED显示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
步骤S2、如图4所示，在所述像素定义层30上对应于数个第一开口31的间隔区域形成倒梯形光刻胶60。
具体的，所述倒梯形光刻胶60呈网格状分布。
具体的，所述倒梯形光刻胶60的制备方法包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、曝光后烘烤(Post expose bake，PEB)、显影、及显影后烘烤(Post bake)。
现有技术中，光刻胶图形化制程通常包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、显影、及显影后烘烤(Post bake)。与现有的光刻胶图形化制程相比，本发明的倒梯形光刻胶60的制备方法在曝光与显影制程之间增加了曝光后烘烤(Post expose bake，PEB)制程，保证得到的光刻胶图案具有倒梯形的形状。
步骤S3、如图5所示，在所述倒梯形光刻胶60、像素定义层30及数个阳极21上制备OLED发光薄膜41。
具体的，所述OLED发光薄膜41采用蒸镀或者喷墨打印(Ink-Jet print)工艺制备。采用蒸镀工艺时，所述OLED发光薄膜41利用开放式掩膜板(Open mask)制作，所述开放式掩膜板为中间仅具有一开口的掩膜板，制作成本较低，本发明的OLED发光薄膜41利用开放式掩膜板制作，与采用精密掩膜板的制程相比，能够极大地降低生产成本。
步骤S4、如图6所示，剥离所述倒梯形光刻胶60，位于所述倒梯形光刻胶60上方的OLED发光薄膜41随之去除，得到数个不相连的OLED发光层40。
具体的，使用光刻胶去除溶剂剥离所述倒梯形光刻胶60。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设 置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝光发光层。
步骤S5、如图7所示，在所述数个OLED发光层40及像素定义层30上形成整面分布的阴极50。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)，所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。具体的，所述阴极50的材料为透明氧化物(TCO)时，所述阴极50采用溅镀法制备。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。具体的，所述阴极50的材料为金属时，所述阴极50采用蒸镀法制备。
步骤S6、如图8所示，在所述阴极50上制作对应于数个第一开口31的间隔区域的辅助阴极22，制得OLED基板80。
通过在所述阴极50上方制作与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题；由于辅助阴极22对应于数个第一开口31的间隔区域设置，能够保证位于子像素区域的阴极50的厚度不受影响，保证位于子像素区域的阴极50的透明度较高，具有较高的出光率。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述辅助阴极22的制备方法包括：采用喷墨打印(Ink-jet print)或者喷嘴打印(Nozzle print)的方式打印导电墨水(ink)，干燥固化后形成辅助阴极22。所述导电墨水为纳米银浆、纳米铜浆或者碳纳米管溶液。优选的，在阴极50上对应原先倒梯形光刻胶60的位置打印导电墨水，干燥固化后形成辅助阴极22。
步骤S7、如图9所示，对所述OLED基板80进行封装后，得到OLED显示器200。
具体的，所述步骤S7包括：提供封装盖板90与封装胶材91，将封装胶材91涂布于封装盖板90或者OLED基板80上，将封装盖板90与OLED基板80对位组合，并使封装胶材91固化后，得到OLED显示器200。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。
上述OLED显示器的制作方法首先形成对应于数个第一开口31的间隔区域的倒梯形光刻胶60，之后进行OLED发光薄膜41的制作，然后去除倒梯形光刻胶60与位于倒梯形光刻胶60上的OLED发光薄膜41，得到不相连的数个OLED发光层40，不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50上方设置与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
请参阅图9，基于上述OLED显示器的制作方法，本发明还提供一种OLED显示器200，包括OLED基板80，所述OLED基板80包括：衬底基板10、设于衬底基板10上且呈阵列排布的数个阳极21、设于所述衬底基板10与数个阳极21上的像素定义层30、设于所述像素定义层30上且分别对应于数个阳极21上方的数个第一开口31、分别设于所述数个阳极21上的数个OLED发光层40、设于所述数个OLED发光层40及像素定义层30上且整面分布的阴极50、以及设于所述阴极50上且对应于数个第一开口31的间隔区域的辅助阴极22；其中，所述数个OLED发光层40不相连。
具体的，所述OLED显示器200还包括：与OLED基板80相对设置的封装盖板90、以及设于所述OLED基板80与封装盖板90之间用于对OLED基板80与封装盖板90进行密封连接的封装胶材91。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。具体的，所述衬底基板10为TFT基板。
具体的，所述OLED基板80还包括设于所述衬底基板10和数个阳极21之间的平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积。
具体的，所述数个阳极21均为反射电极，本发明的OLED显示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝光发光层。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)，所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述辅助阴极22的材料为纳米银、纳米铜或者碳纳米管。
上述OLED显示器包括分别设于数个阳极21上的数个OLED发光层40，其中，数个OLED发光层40不相连，因此不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50上方设置与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
请参阅图10，本发明提供一种OLED显示器的制作方法，包括如下步骤：
步骤S1、如图11所示，提供衬底基板10，在所述衬底基板10上形成呈阵列排布的数个阳极21，在所述衬底基板10与数个阳极21上形成像素定义层30，在所述像素定义层30上形成分别对应于数个阳极21上方的数个第一开口31以及位于数个第一开口31的间隔区域内的第二开口32。
具体的，所述第二开口32呈网格状分布。
具体的，所述衬底基板10为TFT基板。
具体的，所述步骤S1还包括：在所述衬底基板10和数个阳极21之间形成平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积。
具体的，所述数个阳极21均为反射电极，本发明后续制得的OLED显 示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
步骤S2、如图12所示，在所述第二开口32底部的衬底基板10上形成倒梯形光刻胶60。
具体的，所述倒梯形光刻胶60呈网格状分布。
具体的，所述倒梯形光刻胶60的制备方法包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、曝光后烘烤(Post expose bake，PEB)、显影、及显影后烘烤(Post bake)。
现有技术中，光刻胶图形化制程通常包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、显影、及显影后烘烤(Post bake)。与现有的光刻胶图形化制程相比，本发明的倒梯形光刻胶60的制备方法在曝光与显影制程之间增加了曝光后烘烤(Post expose bake，PEB)制程，保证得到的光刻胶图案具有倒梯形的形状。
步骤S3、如图13所示，在所述倒梯形光刻胶60、像素定义层30及数个阳极21上制备OLED发光薄膜41。
具体的，所述OLED发光薄膜41采用蒸镀或者喷墨打印(Ink-Jet print)工艺制备。采用蒸镀工艺时，所述OLED发光薄膜41利用开放式掩膜板(Open mask)制作，所述开放式掩膜板为中间仅具有一开口的掩膜板，制作成本较低，本发明的OLED发光薄膜41利用开放式掩膜板制作，与采用精密掩膜板的制程相比，能够极大地降低生产成本。
步骤S4、如图14所示，剥离所述倒梯形光刻胶60，位于所述倒梯形光刻胶60上方的OLED发光薄膜41随之去除，得到数个不相连的OLED发光层40。
具体的，使用光刻胶去除溶剂剥离所述倒梯形光刻胶60。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝光发光层。
步骤S5、如图15所示，在所述数个OLED发光层40及衬底基板10上形成整面分布的阴极50。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)， 所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。具体的，所述阴极50的材料为透明氧化物(TCO)时，所述阴极50采用溅镀法制备。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。具体的，所述阴极50的材料为金属时，所述阴极50采用蒸镀法制备。
步骤S6、如图16所示，在所述阴极50上制作对应于第二开口32的辅助阴极22，制得OLED基板80。
通过在所述阴极50上方制作与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题；由于辅助阴极22对应于第二开口32设置，能够保证位于子像素区域的阴极50的厚度不受影响，保证位于子像素区域的阴极50的透明度较高，具有较高的出光率。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述辅助阴极22的制备方法包括：采用喷墨打印(Ink-jet print)或者喷嘴打印(Nozzle print)的方式打印导电墨水(ink)，干燥固化后形成辅助阴极22。所述导电墨水为纳米银浆、纳米铜浆、或者碳纳米管溶液。优选的，在阴极50上对应原先倒梯形光刻胶60的位置打印导电墨水，干燥固化后形成辅助阴极22。
步骤S7、如图17所示，对所述OLED基板80进行封装后，得到OLED显示器200。
具体的，所述步骤S7包括：提供封装盖板90与封装胶材91，将封装胶材91涂布于封装盖板90或者OLED基板80上，将封装盖板90与OLED基板80对位组合，并使封装胶材91固化后，得到OLED显示器200。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。
上述OLED显示器的制作方法首先形成对应于数个第一开口31的间隔区域的第二开口32，在第二开口32内制作倒梯形光刻胶60，之后进行OLED发光薄膜41的制作，然后去除倒梯形光刻胶60与位于倒梯形光刻胶60上的OLED发光薄膜41，得到不相连的数个OLED发光层40，不会出现共通 层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50上方制作与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
请参阅图17，基于上述OLED显示器的制作方法，本发明还提供一种OLED显示器200，包括OLED基板80，所述OLED基板80包括：衬底基板10、设于衬底基板10上且呈阵列排布的数个阳极21、设于所述衬底基板10与数个阳极21上的像素定义层30、设于所述像素定义层30上且分别对应于数个阳极21上方的数个第一开口31、设于所述像素定义层30上且位于数个第一开口31的间隔区域内的第二开口32、分别设于所述数个阳极21上的数个OLED发光层40、设于所述数个OLED发光层40及像素定义层30上且整面分布的阴极50、以及设于所述阴极50上且对应于第二开口32的辅助阴极22；其中，所述数个OLED发光层40不相连。
具体的，所述OLED显示器200还包括：与OLED基板80相对设置的封装盖板90、以及设于所述OLED基板80与封装盖板90之间用于对OLED基板80与封装盖板90进行密封连接的封装胶材91。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。
具体的，所述第二开口32呈网格状分布。
具体的，所述衬底基板10为TFT基板。
具体的，所述OLED基板80还包括设于所述衬底基板10和数个阳极21之间的平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积。
具体的，所述数个阳极21均为反射电极，本发明的OLED显示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝 光发光层。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)，所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述辅助阴极22的材料为纳米银、纳米铜或者碳纳米管。
上述OLED显示器包括分别设于数个阳极21上的数个OLED发光层40，其中，数个OLED发光层40不相连，因此不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50上方设置与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
请参阅图18，本发明提供一种OLED显示器的制作方法，包括如下步骤：
步骤S1、如图19所示，提供衬底基板10，在所述衬底基板10上形成呈阵列排布的数个阳极21及位于数个阳极21的间隔区域内的辅助阴极22，在所述衬底基板10、数个阳极21及辅助阴极22上形成像素定义层30，在所述像素定义层30上形成分别对应于数个阳极21上方的数个第一开口31以及对应于辅助阴极22上方的第二开口32。
具体的，所述数个阳极21均为反射电极，本发明后续制得的OLED显示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22采用光刻制程制得。
具体的，所述辅助阴极22的材料包括银(Ag)、铜(Cu)、铝(Al)、钼(Mo)等金属中的一种或多种。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述第二开口32呈网格状分布。
具体的，所述衬底基板10为TFT基板。
具体的，所述步骤S1还包括：在所述衬底基板10和数个阳极21之间形成平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积。
步骤S2、如图20所示，在所述第二开口32底部的辅助阴极22上形成倒梯形光刻胶60。
具体的，所述倒梯形光刻胶60呈网格状分布。
具体的，所述倒梯形光刻胶60的制备方法包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、曝光后烘烤(Post expose bake，PEB)、显影、及显影后烘烤(Post bake)。
现有技术中，光刻胶图形化制程通常包括：光刻胶涂布(coating)、预烘烤(pre-bake)、曝光、显影、及显影后烘烤(Post bake)。与现有的光刻胶图形化制程相比，本发明的倒梯形光刻胶60的制备方法在曝光与显影制程之间增加了曝光后烘烤(Post expose bake，PEB)制程，保证得到的光刻胶图案具有倒梯形的形状。
步骤S3、如图21所示，在所述倒梯形光刻胶60、像素定义层30及数个阳极21上制备OLED发光薄膜41。
具体的，所述OLED发光薄膜41采用蒸镀或者喷墨打印(Ink-Jet print)工艺制备。采用蒸镀工艺时，所述OLED发光薄膜41利用开放式掩膜板(Open mask)制作，所述开放式掩膜板为中间仅具有一开口的掩膜板，制作成本较低，本发明的OLED发光薄膜41利用开放式掩膜板制作，与采用精密掩膜板的制程相比，能够极大地降低生产成本。
步骤S4、如图22所示，剥离所述倒梯形光刻胶60，位于所述倒梯形光刻胶60上方的OLED发光薄膜41随之去除，得到数个不相连的OLED发光层40。
具体的，使用光刻胶去除溶剂剥离所述倒梯形光刻胶60。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝光发光层。
步骤S5、如图23所示，在所述数个OLED发光层40、像素定义层30及辅助阴极22上形成整面分布的阴极50，制得OLED基板80。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)，所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。具体的，所述阴极50的材料为透明氧化物(TCO)时，所述阴极50采用溅镀法制备。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。具体的，所述阴极50的材料为金属时，所述阴极50采用蒸镀法制备。
通过在所述阴极50下方制作辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题；由于辅助阴极22对应于第二开口32设置，能够保证位于子像素区域的阴极50的厚度不受影响，保证位于子像素区域的阴极50的透明度较高，具有较高的出光率。
步骤S6、如图24所示，对所述OLED基板80进行封装后，得到OLED显示器200。
具体的，所述步骤S6包括：提供封装盖板90与封装胶材91，将封装胶材91涂布于封装盖板90或者OLED基板80上，将封装盖板90与OLED基板80对位组合，并使封装胶材91固化后，得到OLED显示器200。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。
上述OLED显示器的制作方法首先形成对应于数个第一开口31的间隔区域的第二开口32，在第二开口32内制作倒梯形光刻胶60，之后进行OLED发光薄膜41的制作，然后去除倒梯形光刻胶60与位于倒梯形光刻胶60上的OLED发光薄膜41，得到不相连的数个OLED发光层40，不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50下方制作与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
请参阅图24，基于上述OLED显示器的制作方法，本发明还提供一种OLED显示器，包括OLED基板80，所述OLED基板80包括：衬底基板10、设于衬底基板10上且呈阵列排布的数个阳极21、设于衬底基板10上且位于数个阳极21的间隔区域内的辅助阴极22、设于所述衬底基板10、 数个阳极21及辅助阴极22上的像素定义层30、设于所述像素定义层30上且分别对应于数个阳极21上方的数个第一开口31、设于所述像素定义层30上且对应于辅助阴极22上方的第二开口32、分别设于所述数个阳极21上的数个OLED发光层40、以及设于所述数个OLED发光层40、像素定义层30及辅助阴极22上且整面分布的阴极50；其中，所述数个OLED发光层40不相连。
具体的，所述OLED显示器200还包括：与OLED基板80相对设置的封装盖板90、以及设于所述OLED基板80与封装盖板90之间用于对OLED基板80与封装盖板90进行密封连接的封装胶材91。
具体的，所述封装盖板90为玻璃基板或者具有彩色滤光片的玻璃基板。所述玻璃基板用于与具有RGB side-by side结构的OLED基板80配合使用；所述具有彩色滤光片的玻璃基板用于与具有White OLED结构的OLED基板80配合使用。
具体的，所述数个阳极21均为反射电极，本发明的OLED显示器为顶发光OLED显示器。优选的，所述数个阳极21均为由两层透明导电氧化物薄膜夹合一层金属薄膜构成的复合层。优选的，所述透明导电氧化物薄膜的材料包括氧化铟锡(ITO)，所述金属薄膜的材料包括银(Ag)。
具体的，所述辅助阴极22呈网格状分布。
具体的，所述辅助阴极22的材料包括银(Ag)、铜(Cu)、铝(Al)、钼(Mo)等金属中的一种或多种。
具体的，所述辅助阴极22的厚度为0.5μm～10μm。
具体的，所述第二开口32呈网格状分布。
具体的，所述衬底基板10为TFT基板。
具体的，所述OLED基板80还包括设于所述衬底基板10和数个阳极21之间的平坦层(未图示)。
具体的，所述数个第一开口31的面积分别小于所述数个阳极21的面积；所述第二开口32的面积小于所述辅助阴极22的面积。
具体的，所述OLED发光层40包括在所述阳极21上从下至上依次设置的空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。对于具有White OLED结构的OLED基板来说，所述发光层为白光发光层。对于具有RGB side-by side结构的OLED基板来说，所述发光层为红/绿/蓝光发光层。
具体的，所述阴极50为透明电极或者半透明电极。
所述阴极50为透明电极时，所述阴极50的材料为透明氧化物(TCO)， 所述透明氧化物优选为氧化铟锌(IZO)，所述阴极50的厚度在100nm～500nm之间。
所述阴极50为半透明电极时，所述阴极50的材料为金属，所述金属优选为银(Ag)或镁银合金(MgAg)，所述阴极50的厚度在10nm～20nm之间；所述半透明电极具有40％以上的光透过率。
上述OLED显示器包括分别设于数个阳极21上的数个OLED发光层40，其中，数个OLED发光层40不相连，因此不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极50下方设置与其相连的辅助阴极22，能够降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题。
值得一提的是，在本发明中，“对应于数个第一开口31的间隔区域”、“对应于数个第一开口31的间隔区域”、及“对应于第二开口32”这三种表述方式指代的含义相同，均表示“对应于数个子像素的间隔区域”。
本发明的OLED显示器的制作方法中，还可以设置倒梯形光刻胶60呈直线状分布于数个子像素的间隔区域内的情形，在这种情形下，OLED发光薄膜41仅在一个方向(即垂直于倒梯形光刻胶60的延伸方向)上被隔断，在OLED发光薄膜41未被隔断的方向(倒梯形光刻胶60的延伸方向)上，可以通过增大相邻子像素的间隔区域，从而增加OLED发光薄膜41上位于相邻子像素的间隔区域的电阻来阻止载子在相邻子像素之间流动，避免串色现象发生。
另外，对于辅助阴极设于阴极下方的情形，还可以将辅助阴极设置于TFT基板中，与源漏极或者栅极设于同一层，可以更显著地降低阴极50的方块电阻，减轻电压降(IR drop)引起的亮度不均问题，提升显示效果。
综上所述，本发明提供一种OLED显示器及其制作方法。本发明的OLED显示器的制作方法利用设于数个子像素的间隔区域的倒梯形光刻胶实现数个OLED发光层不相连的效果，制得的OLED显示器不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，保证OLED显示器具有较好的显示效果；并且通过在阴极的上方或者下方制作与其相连的辅助阴极，能够降低阴极的方块电阻，减轻电压降引起的亮度不均问题。本发明的OLED显示器采用上述方法制得，不会出现共通层侧向漏电的情况，避免了由于载子在相邻子像素之间迁移导致的串色现象，OLED显示器具有较好的显示效果，其阴极具有较低的方块电阻，能够减轻电压降引起的亮度不均问题。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (11)

  1. 一种OLED显示器的制作方法，包括：制作OLED基板的步骤及对OLED基板进行封装的步骤，其中，制作OLED基板的步骤包括：提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口，分别在所述数个阳极上形成数个OLED发光层，在所述数个OLED发光层及像素定义层上形成阴极，在所述阴极的上方或者下方制作与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置。
  2. 如权利要求1所述的OLED显示器的制作方法，其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口；
    步骤S2、在所述像素定义层上对应于数个第一开口的间隔区域形成倒梯形光刻胶；
    步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
    步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
    步骤S5、在所述数个OLED发光层及像素定义层上形成整面分布的阴极；
    步骤S6、在所述阴极上制作对应于数个第一开口的间隔区域的辅助阴极，制得OLED基板；
    步骤S7、对所述OLED基板进行封装后，得到OLED显示器。
  3. 如权利要求1所述的OLED显示器的制作方法，其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口以及位于数个第一开口的间隔区域内的第二开口；
    步骤S2、在所述第二开口底部的衬底基板上形成倒梯形光刻胶；
    步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
    步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
    步骤S5、在所述数个OLED发光层及衬底基板上形成整面分布的阴极；
    步骤S6、在所述阴极上制作对应于第二开口的辅助阴极，制得OLED基板；
    步骤S7、对所述OLED基板进行封装后，得到OLED显示器。
  4. 如权利要求1所述的OLED显示器的制作方法，其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极及位于数个阳极的间隔区域内的辅助阴极，在所述衬底基板、数个阳极及辅助阴极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口以及对应于辅助阴极上方的第二开口；
    步骤S2、在所述第二开口底部的辅助阴极上形成倒梯形光刻胶；
    步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED发光薄膜；
    步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
    步骤S5、在所述数个OLED发光层、像素定义层及辅助阴极上形成整面分布的阴极，制得OLED基板；
    步骤S6、对所述OLED基板进行封装后，得到OLED显示器。
  5. 如权利要求2所述的OLED显示器的制作方法，其中，所述倒梯形光刻胶呈网格状分布；所述辅助阴极呈网格状分布。
  6. 一种OLED显示器，包括OLED基板，所述OLED基板包括：衬底基板、设于所述衬底基板上形成呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上的阴极、以及设于所述阴极的上方或者下方且与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置。
  7. 如权利要求6所述的OLED显示器，其中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数 个阳极上方的数个第一开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上且整面分布的阴极、以及设于所述阴极上的辅助阴极。
  8. 如权利要求6所述的OLED显示器，其中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于所述衬底基板与数个阳极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、设于所述像素定义层上且位于数个第一开口的间隔区域内的第二开口、分别设于所述数个阳极上的数个OLED发光层、设于所述数个OLED发光层及像素定义层上且整面分布的阴极、以及设于所述阴极上的辅助阴极。
  9. 如权利要求6所述的OLED显示器，其中，所述OLED基板具体包括：衬底基板、设于衬底基板上且呈阵列排布的数个阳极、设于衬底基板上且位于数个阳极的间隔区域内的辅助阴极、设于所述衬底基板、数个阳极及辅助阴极上的像素定义层、设于所述像素定义层上且分别对应于数个阳极上方的数个第一开口、设于所述像素定义层上且对应于辅助阴极上方的第二开口、分别设于所述数个阳极上的数个OLED发光层、以及设于所述数个OLED发光层、像素定义层及辅助阴极上且整面分布的阴极。
  10. 如权利要求7所述的OLED显示器，其中，所述辅助阴极呈网格状分布。
  11. 一种OLED显示器的制作方法，包括：制作OLED基板的步骤及对OLED基板进行封装的步骤，其中，制作OLED基板的步骤包括：提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口，分别在所述数个阳极上形成数个OLED发光层，在所述数个OLED发光层及像素定义层上形成阴极，在所述阴极的上方或者下方制作与所述阴极相连的辅助阴极；其中，所述数个OLED发光层不相连；所述辅助阴极对应于数个阳极的间隔区域设置；
    其中，具体包括如下步骤：
    步骤S1、提供衬底基板，在所述衬底基板上形成呈阵列排布的数个阳极，在所述衬底基板与数个阳极上形成像素定义层，在所述像素定义层上形成分别对应于数个阳极上方的数个第一开口；
    步骤S2、在所述像素定义层上对应于数个第一开口的间隔区域形成倒梯形光刻胶；
    步骤S3、在所述倒梯形光刻胶、像素定义层及数个阳极上制备OLED 发光薄膜；
    步骤S4、剥离所述倒梯形光刻胶，位于所述倒梯形光刻胶上方的OLED发光薄膜随之去除，得到数个不相连的OLED发光层；
    步骤S5、在所述数个OLED发光层及像素定义层上形成整面分布的阴极；
    步骤S6、在所述阴极上制作对应于数个第一开口的间隔区域的辅助阴极，制得OLED基板；
    步骤S7、对所述OLED基板进行封装后，得到OLED显示器；
    其中，所述倒梯形光刻胶呈网格状分布；所述辅助阴极呈网格状分布。
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