WO2007037553A1 - 金属配線付き基板の製造方法 - Google Patents
金属配線付き基板の製造方法 Download PDFInfo
- Publication number
- WO2007037553A1 WO2007037553A1 PCT/JP2006/320041 JP2006320041W WO2007037553A1 WO 2007037553 A1 WO2007037553 A1 WO 2007037553A1 JP 2006320041 W JP2006320041 W JP 2006320041W WO 2007037553 A1 WO2007037553 A1 WO 2007037553A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- reverse
- substrate
- resin
- hatano
- theta
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70791—Large workpieces, e.g. glass substrates for flat panel displays or solar panels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0562—Details of resist
- H05K2203/0594—Insulating resist or coating with special shaped edges
Definitions
- the present invention is a liquid crystal display (LCD), organic electrium, non-taste, play, plus plastic, (PDP). About last. More details ⁇ Using a light-resin composition with reverse-there-like Rensto Hatano; C-lift-off method for producing ⁇ ⁇ BHf size ⁇
- a metal shell is formed on a substrate by a lift-off method, usually a cross-section or a Renst material family that can form a Nosthatano is used.
- lead-off is formed by lift-off method: (1) A Lentst film is formed on S3 ⁇ 4 using an unsaturated material. (2) A Neka-type Lensthattano (unformed) is formed by hatching the Lenost film. (3) Including cadence lens »Form a brown film by depositing ⁇ on the entire surface. (4) Develop the entire surface by dissolving ⁇ 1 categorized lenost hatano. In the above step (4), the film on the negative type Rensthatano or the film on the opposite side remains in the form of notano.
- F ig 1 (a) F ig 1 (b) and F ig 1 (c) are explanations showing an example of the process by the lift-off method.
- the selfish process (2) as shown in Fig. 1 (a), if the cross-sectional non-type Rensthatano 2 is formed on S3 ⁇ 4 1, the next process (3) » Since the film is formed, it is considered as the film on the upper side and the film on the Renost Hatano. Therefore, if Lensthatano is removed in the step (4), not only will it be a month, but also a portion of the tea ceremony S on the continuous substrate will be lost.
- non-photo-type photolenst has been used as the photorenost that forms the reverse theta-shaped remnant hatano.
- Examples are (X) exposure to light followed by components that crosslink by reason (Y) alkali-soluble resin and (Z) containing at least one compounding ⁇ !
- the proposed method is to create a reno of the reverse theta by using a horn type lent of a single norihasanore type, and a method of forming a turno by the lift-off method (for example, using a transparent roughened back surface)
- a method of forming a reverse theta-like Lensthatano using a tongue even if it is in the form of a material (e.g., by forming a cyclized comb-type non-Lenst film on a patented Lenst film)
- these methods are not only difficult to form but also difficult to form well-shaped records.
- Size The present invention makes use of a substrate provided with a reverse theta-like Renst Hatano obtained by operating a general-purpose and inexpensive phone-type photolens under such circumstances. Some of them have been manufactured well.
- the present inventors applied the composition on the surface to form enormous amounts, and formed a reverse theta-like remnant hatano to repel this ⁇ As a result, the present invention has been found and the present invention has been made based on this finding.
- step (b) Drying in step (b) jgffi force 5 to 40 OOP a
- the production of the tree arrangement size warehouse of the present invention has the following steps (a), (b) and X (3) (e).
- the reverse theta-shaped Lensthatano is an angle ⁇ or 0 ° or ⁇ ⁇ 90, which is generated in Lensthatter in the cross-sectional shape of Lensthatano on the upper side of 3 ⁇ 4t as F i. Renstohatano that can satisfy [[Process (a)]
- This process is a process of forming enormous amounts by applying ( ⁇ ) alkali-soluble resin (*) quinonoanotohi (C) ⁇ U photopolymer extinction containing U
- Al-soluble resin is not limited to the current resin that consists of Al-Fe tfe night.
- the resin include photosensitive resin, such as Noholanoc resin, Renol resin, Atalinole resin, styrene-acrylic acid copolymer, ⁇ , and nitroquinostyrene polymer.
- Noholanok resin or preferred resin can be placed on the shelf and combined with two or more types ⁇ : Shelf and fiit-noholanoc resin is obtained by condensing a phenolic compound and an ano ⁇ humanized ⁇ . Noholanok type phenol resin.
- Phenolation used to produce Noholanoc resin is monovalent or bivalent or higher than that of Renorenoinono.
- One type of phenolic compound may be used quickly, or two or more types may be combined.
- Phenolication ⁇ J to condense with J may be any of human and aromatic aromatics.
- One of these ananohuman compounds can be used as a bug or two can be used.
- noholanoc resin In the production of noholanoc resin, phenolization, ano-humanization, and acid reversal are performed by P.
- As an acid butterfly we can use oxalic acid nouric acid p-toluenosulfono ⁇ .
- Condensed ⁇ fe product can be used as a noholanoc resin as it is
- Alkali-soluble resin can be used by separating and removing low molecular weight 3 ⁇ 4fe part. Seeds of seeds in a single liquid fraction / low molecular weight fraction is removed by centrifugation or is thin.
- the obtained condensation ⁇ / T ⁇ fe product of ⁇ ⁇ ⁇ ⁇ ⁇ resin is good Alcohol of Aichinore Ethanono ⁇ Acetone Methyl ethino lektono Alkylene Crycolic Monoethyl Acetate etc. It dissolves in ether sickle etc. Next, you can get underwater shelves that have been removed from the lower molecular weight ft *.
- the amount of the Al-soluble soluble noholanoc resin used in the invention according to the present invention is the same amount, usually 2 0 0 to 2 0, 0 0 0, preferably 2, 5 0 0 to 1 2, 0 0 or 3 , 0 0 to 8, 0 0 °.
- the weight-average molecular weight can be determined or regulated by the Kel-Haromatoclaffey (GPC) method, with the early hour being tetrahedrofurano (TH F) and night.
- the component (B), quinonoa Specific examples of acid halides include 1,2-naphthoquinonoanoto-5-ite 1 2-naphthoquinonoanoto-4-sulphonyl chlorite 1, noanoto 6-sulfonyl chlorite, and the like.
- the amount of this (B) component containing quinonone end group ⁇ ) is self (A) component resin, usually 5 to 50 parts by weight, preferably 15 to 4 0, preferably 20 ⁇ 40 parts by mass.
- This blending amount or the above BIS range is better than reverse nosthatano formation, and the strength and accuracy are more accurate! Resolving Special photo-sensitive shelves that are excellent in haranos, f can be obtained.
- ⁇ lj of the component (C) in the photopolymer resin used in the present invention is not particularly limited as long as it dissolves the inclusion of the quinonone ant group and the alkylene crycol type i3 ⁇ 43 ⁇ 4IJ ether type ⁇ IJ ester type ⁇ IJ ⁇ i will be able to shelve the IJ Imit Aito.
- ⁇ 3 ⁇ 4 ⁇ are 1 or 3 or a combination of two or more.
- the content of the ladle is suitable considering the solid content of the photosensitive resin composition described later.
- alkylene cricoyl series ij include ethenoglycol monoethylene ethylene cricono! Rickino rete nore no ethylene cricore mono mono ethylene crico monore monoethylenoate nore Ricono Reno Echinolee 1 Tenno's Ethylene Criconole Reno Renore Reno Criconole Monomethenore Ete Nore Pro-Hylene Cricozore Mono-Ethinore Héren Criconole Mononore Renoate / Le Ethylene Cliconore Mono Mechinole Methyl onoate 3-ethylquinoprohynoate ethinole Methyl lactate 7 Acid lactones can be listed.
- fragrances such as toruenoquinolene 3 ⁇ 4K
- ketono ⁇ IJ methylethinoreketono 2-heptanonone can be mentioned.
- N, N-no-methylacetoamito N-me can be listed.
- Photosensitive resin yarns used in the present invention contain i ⁇ rni of ⁇ 0 as desired, adhesion promoters for improving the adhesion to the materials, and dyes. I will come to let you.
- Norikon type surface active agent IJ agent It is done.
- These surface activity ⁇ can be 1 or 2 or more types can be combined and shelves.
- Noricon-based surfactant [ ⁇ IJ is a surfactant with a Noroxano bond.
- Specific examples include SH28PA, SH29PA, SH30P, modified corn oil, SF8410, SF8427, SH8400, ST83PA, ST86PA (and above, Toray Tauco, 12Noku, Noriko, 21 KP323, KP324, KP340, KP, 341, and Shinshinetsu, TSF400, TSF401, TSF410, TSF4440, TSF4, 4446 and above.
- Noriko-None ⁇ S3 ⁇ 4 can be raised.
- Fluorocarbon-based interfacial activity U is an interfacial activity IJ with fluorocarhonos. Specific examples include Fluorinert [Product Name] FC—430 Same F Above Sumitomo 3EM] Surflon [Product Name] S—141 Same S—1 71 It is possible to raise F472SF, F475, etc.
- holioquinoethylene or an interface with virginity comes.
- Specific examples include horioquinoetilenolaurylate chillenoste alinole ter holioquino ethyleneoleino tere hol octino refenyl ether holio quinoethylene nonyl phenyl tequilol nolaurate
- the amount of shelf of these surface active IJs is 1 mass ppm, preferably 200-2 000 mass ppm for photosensitive raw resin and soot. If this range is used, coating unevenness occurs in the coating film.
- melamination ⁇ and noranonation ⁇ I or melamination ⁇ As a specific example of J, Cymel (Cyme 1) —300 Tenocinostat lease column] MW-3 OMH MW-30 MS— 1 1 MX- 750 MX- 706 [Sanka Chemicanolene ijf]
- the amount of shelves is usually from 0 to 18 parts by mass, more preferably from 1 to 15 parts by mass with respect to 100 parts by mass of the alkali-soluble resin. .
- noranolysis ⁇ include hininotrimetoquinomelano nonorano hininoretris (2-methoxyquinotokin) melano N— (2-aminoaminopropyl quinometoquinomelano N— (2-aminoethyl) -13 trimetoquinomelano 3-aminominopro Hiltrietoquinomelano 3—Grinoletrime Tokinomelano 3—Clinotoquinopro Hill Methylome Toquino Noehokino Black Hekino-no-) FTPROHI / Retrime Tokinonorano Oligoesters Horihito Kinohis Fueninorea / Recanos Horihi Toruaruka ⁇ Horihitorokino Tetrakisfuenyl Alka ⁇ ! Masle.
- the photosensitive resin used in the present invention is an alkali-soluble resin group-containing compound as described above.
- Adhesion promoter Dye Sensitivity Low It can be prepared by mixing various varieties / Kongoi I »with cat IJ. There is no limitation for each ingredient / Kongo etc.
- Ingredients other than the solid content of the resin photosensitive resin composition used in the present invention are not limited or not normally 6 to 30% by mass, preferably 7 to 25% by mass to 20% by mass. By setting the solid content within this range, it is possible to develop the coating ⁇ without using it.
- the above-mentioned coating method of the above-mentioned photopolymer resin can be applied to these candy, and it may be rubbed.
- various methods such as the spray method, roll roll cloth / stainless shine coating method, etc. Of these methods, the suhinores trinot coat method is preferred.
- SHINOTO / KYOTO is a photosensitive resin composition that can be applied without moving the sinoto that is used to move the sinoto.
- SHINORES SHINOTOT COATING Forming a layer.
- ⁇ ⁇ Pressure and pressure conditions of the equipment To iiffi force: Specified by the time required to reach normal pressure at room temperature 5-4 OOOPa preferably 10-1 OO or preferably 20-300 Pa Te line is good. If this exceeds itEE power or 5 Pa or 4, OOOPa, there is a reverse-stair-shaped Renst Hatano form.
- ⁇ 3 ⁇ 4 ⁇ means below 13,000 OPa. Is there no particular limitation on the time required for drying III? »And the amount of resin ⁇ 3 ⁇ 4 The amount of the honobu's exhaust capacity What should I consider? Usually 1 second to 30 minutes, preferably 5 seconds to 10 minutes Second to 5 minutes, particularly preferably 30 seconds to 2 minutes .
- This process is a process of forming a heart-shaped Rensthatano, which is obtained by subjecting the sensation ⁇ ⁇ ⁇ formed in the disgusting process (b) to Hatano exposure.
- a habitano having a predetermined shape is formed on the photosensitive layer through active mask light via a normal mask hatano (hatano exposure).
- development with this potash developer is performed to form the desired Rensthatano.
- the type of activity used in the present invention is not particularly limited, and examples thereof include a visible ray, an X ray and the like, and a visible ray and an ultraviolet ray are particularly preferred.
- Akira t ⁇ im Purpose It is possible to set it arbitrarily in consideration of the film etc. There is no particular limitation on the alkaline developer used for development of the award-winning hatano. Word You can get Nosthatano by doing Mg Mg for 2 to 90 minutes.
- the Renst Hatano obtained in this way has an inverted Tenno-shaped cross section [step (d)]
- This process is a process of attaching metal to the reverse-there-shaped Renstohr plate obtained by the selfishness (c) process.
- Deposition of the entire genus is usually accomplished by evaporating the substrate with a reverse Tenno-shaped Lensthatano. As a result, the entire surface of the sickle is laid.
- these elements can be mentioned as containing gold.
- This process is a process of removing both the lenticular lantohatano and the deposited film deposited on it by the lift-off operation, and the entire surface is removed by the process (d).
- an adhesive film when it is formed, it will be formed on the reverse side and on the reverse-theor-like Lenost Hatano as shown in Fi. There, it takes a lift-off operation It is recommended to immerse it in the stripping solution for Renost usually for about 1 to 30 minutes and remove both the Renst grouper adhesion film.
- the desired board with metal wiring can be obtained as described above.
- the reverse-theta-shaped rendest sickle that can be obtained by a simple operation with a mold photo lens is used to place a shelf. EHf-sized sickle is produced on the 3 ⁇ 4f side and manufactured well.
- the present invention is also one of the following: (a) »_ b (A) Alkali is possible Non-noanoto group-containing ⁇ and (C) ⁇ U-photosensitive 14 Step of forming resin, product (b) Step of forming a self-coating film and forming a photosensitive layer
- the method of manufacturing the balance sickle according to the present invention has the disgust (a) described above, and is easily carried out in accordance with the description of the process relating to those processes.
- Table 1 shows the result of the hatan shape of the brown film after peeling and peeling as well as the ultimate pressure and treatment time during ffi treatment.
- the Lentst shape the reverse theta-like Lensthattano is formed.
- Table 1 shows the evaluation results of the Hatano shape of the metal deposition film after the Renst Hattan. Comparative Example 1
- the present invention makes it easy to operate with a general-purpose, inexpensive phone-type photo lens.
- the lift-off method can be used to produce the Sf surface with high productivity.
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- Inorganic Chemistry (AREA)
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- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2006800362612A CN101278239B (zh) | 2005-09-30 | 2006-09-29 | 带金属配线的基板的制造方法 |
JP2007537783A JP4978800B2 (ja) | 2005-09-30 | 2006-09-29 | 金属配線付き基板の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005288721 | 2005-09-30 | ||
JP2005-288721 | 2005-09-30 |
Publications (2)
Publication Number | Publication Date |
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WO2007037553A1 true WO2007037553A1 (ja) | 2007-04-05 |
WO2007037553A9 WO2007037553A9 (ja) | 2007-05-31 |
Family
ID=37899946
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2006/320041 WO2007037553A1 (ja) | 2005-09-30 | 2006-09-29 | 金属配線付き基板の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4978800B2 (ja) |
KR (1) | KR20080057325A (ja) |
CN (1) | CN101278239B (ja) |
TW (1) | TW200731027A (ja) |
WO (1) | WO2007037553A1 (ja) |
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WO2008141481A1 (fr) * | 2007-05-24 | 2008-11-27 | Princo Corp. | Structure et procédé de fabrication d'un câblage métallique sur une carte multicouches |
US7931973B2 (en) | 2007-05-25 | 2011-04-26 | Princo Corp. | Manufacturing method of metal structure in multi-layer substrate and structure thereof |
CN101312620B (zh) * | 2007-05-24 | 2011-06-22 | 巨擘科技股份有限公司 | 多层基板金属线路制造方法及其结构 |
JP2013084924A (ja) * | 2011-09-28 | 2013-05-09 | Dainippon Printing Co Ltd | パターンの形成方法 |
WO2014050421A1 (ja) * | 2012-09-25 | 2014-04-03 | 東レ株式会社 | 配線パターンの形成方法および配線パターン形成物 |
US8815333B2 (en) | 2007-12-05 | 2014-08-26 | Princo Middle East Fze | Manufacturing method of metal structure in multi-layer substrate |
JP2017526945A (ja) * | 2014-06-18 | 2017-09-14 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 金属誘電体光学フィルター、センサーデバイス、および製造方法 |
US10197716B2 (en) | 2012-12-19 | 2019-02-05 | Viavi Solutions Inc. | Metal-dielectric optical filter, sensor device, and fabrication method |
US10222523B2 (en) | 2012-12-19 | 2019-03-05 | Viavi Solutions Inc. | Sensor device including one or more metal-dielectric optical filters |
US10378955B2 (en) | 2012-12-19 | 2019-08-13 | Viavi Solutions Inc. | Spectroscopic assembly and method |
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KR101674208B1 (ko) * | 2009-12-29 | 2016-11-23 | 엘지디스플레이 주식회사 | 배선 형성 방법 및 이를 이용한 액정표시장치 제조방법 |
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-
2006
- 2006-09-29 TW TW095136136A patent/TW200731027A/zh unknown
- 2006-09-29 KR KR1020087010394A patent/KR20080057325A/ko not_active Application Discontinuation
- 2006-09-29 CN CN2006800362612A patent/CN101278239B/zh not_active Expired - Fee Related
- 2006-09-29 JP JP2007537783A patent/JP4978800B2/ja not_active Expired - Fee Related
- 2006-09-29 WO PCT/JP2006/320041 patent/WO2007037553A1/ja active Application Filing
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2008141481A1 (fr) * | 2007-05-24 | 2008-11-27 | Princo Corp. | Structure et procédé de fabrication d'un câblage métallique sur une carte multicouches |
CN101312620B (zh) * | 2007-05-24 | 2011-06-22 | 巨擘科技股份有限公司 | 多层基板金属线路制造方法及其结构 |
US7931973B2 (en) | 2007-05-25 | 2011-04-26 | Princo Corp. | Manufacturing method of metal structure in multi-layer substrate and structure thereof |
US8815333B2 (en) | 2007-12-05 | 2014-08-26 | Princo Middle East Fze | Manufacturing method of metal structure in multi-layer substrate |
JP2013084924A (ja) * | 2011-09-28 | 2013-05-09 | Dainippon Printing Co Ltd | パターンの形成方法 |
WO2014050421A1 (ja) * | 2012-09-25 | 2014-04-03 | 東レ株式会社 | 配線パターンの形成方法および配線パターン形成物 |
US10378955B2 (en) | 2012-12-19 | 2019-08-13 | Viavi Solutions Inc. | Spectroscopic assembly and method |
US10197716B2 (en) | 2012-12-19 | 2019-02-05 | Viavi Solutions Inc. | Metal-dielectric optical filter, sensor device, and fabrication method |
US10222523B2 (en) | 2012-12-19 | 2019-03-05 | Viavi Solutions Inc. | Sensor device including one or more metal-dielectric optical filters |
US10670455B2 (en) | 2012-12-19 | 2020-06-02 | Viavi Solutions Inc. | Spectroscopic assembly and method |
US10928570B2 (en) | 2012-12-19 | 2021-02-23 | Viavi Solutions Inc. | Metal-dielectric optical filter, sensor device, and fabrication method |
US11782199B2 (en) | 2012-12-19 | 2023-10-10 | Viavi Solutions Inc. | Metal-dielectric optical filter, sensor device, and fabrication method |
JP2017526945A (ja) * | 2014-06-18 | 2017-09-14 | ヴァイアヴィ・ソリューションズ・インコーポレイテッドViavi Solutions Inc. | 金属誘電体光学フィルター、センサーデバイス、および製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200731027A (en) | 2007-08-16 |
CN101278239A (zh) | 2008-10-01 |
WO2007037553A9 (ja) | 2007-05-31 |
CN101278239B (zh) | 2011-11-16 |
JPWO2007037553A1 (ja) | 2009-04-16 |
JP4978800B2 (ja) | 2012-07-18 |
KR20080057325A (ko) | 2008-06-24 |
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