TW200947116A - Method for producing cured resist using negative photosensitive resin laminate, negative photosensitive resin laminate, and use of negative photosensitive resin laminate - Google Patents
Method for producing cured resist using negative photosensitive resin laminate, negative photosensitive resin laminate, and use of negative photosensitive resin laminate Download PDFInfo
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- TW200947116A TW200947116A TW97149478A TW97149478A TW200947116A TW 200947116 A TW200947116 A TW 200947116A TW 97149478 A TW97149478 A TW 97149478A TW 97149478 A TW97149478 A TW 97149478A TW 200947116 A TW200947116 A TW 200947116A
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- photosensitive resin
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
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- Microelectronics & Electronic Packaging (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
200947116 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種抗蝕劑硬化物之製造方法,其包括使 用具有負型感光性樹脂層之負型感光性樹脂積層體之步驟 以及對該負型感光性樹脂層進行曝光之步驟。更詳細而 言,本發明係關於一種適於製造印刷電路(配線)板、引線 框架、半導體封裝等的使用具有負型感光性樹脂層之負型 感光性樹脂積層體來製造抗蝕劑硬化物的方法。又,本發 明係關於一種具有i線單色曝光用之負型感光性樹脂層的 負型感光性樹脂積層體、以及負型感光性樹脂積層體之使 用方法。更詳細而言,本發明係關於一種適於製造印刷電 路(配線)板、引線框架、半導體封裝等的具有可進行鹼性 顯影之i線單色曝光用之負型感光性樹脂層的負型感光性 樹脂積層體以及負型感光性樹脂積層體之使用方法。 【先前技術】 先前,印刷配線板係藉由光微影法來製造。所謂光微影 法,係利用感光性樹脂組合物之光反應而形成圖案之方 法。於使用負型之感光性樹脂組合物之情形時可將該感 光性樹脂組合物塗佈於基板上形成感光性樹脂層,之後進 订圖案曝光而使該感光性樹脂組合物之曝光部聚合硬化, 用顯影液去除未曝光部’從而於基板上形成抗蝕劑圖案, 實施蝕刻或電鍍處理而形成導體圖案後,自該基板上剝離 去除該抗蝕劑圖案,藉此於基板上形成導體圖案。 於上述負型光微影法中’將負型感光性樹脂組合物塗佈 136693.doc 200947116 於基板上時,可使用將負型感光性樹脂組合物之溶液塗佈 於基板上後使之乾燥之方法,或者將依序積層有支持體、 包含負型感光性樹脂組合物之層(以下,亦稱為「負型感 光性樹脂層」)以及視需要之保護層的乾膜抗蝕劑積層於 基板上之方法中的任一種方法。製造印刷配線板時,多使 用將乾膜抗蝕劑積層於基板上之後一種方法。 以下’就使用乾膜抗姓劑來製造印刷配線板之方法加以 說明。首先,於乾膜抗蝕劑具有保護層、例如聚乙烯膜之 情形時’首先自負型感光性樹脂層上剝離保護層。接著, 使用層合機(laminator),於基板、例如銅箔積層板上,以 成為基板、負型感光性樹脂層、支持體之順序之方式積層 負型感光性樹脂層及支持體。然後,經由具有配線圖案之 光罩’利用超高壓水銀燈所發出之i線(波長為365 nm)等紫 外線對該負型感光性樹脂層進行曝光,藉此使曝光部分聚 合硬化。繼而剝離包含聚對苯二曱酸乙二酯等之支持體。 接著’利用具有弱鹼性之水溶液等顯影液,將負型感光性 樹脂層之未曝光部分溶解去除或分散去除,藉此於基板上 形成抗蝕劑圖案。然後,以所形成之抗蝕劑圖案作為保護 光罩而進行公知之蝕刻處理或圖案電鍍處理。最後,將該 抗姓劑圖案自基板上剝離,製造出具有導體圖案之基板、 即印刷配線板。 近年來,隨著行動電話、筆記型電腦等電子設備之小型 輕量化,印刷配線板之配線間隔之微細化要求越來越強 烈。為應對該微細化要求,於對乾膜抗蝕劑之曝光方法 136693.doc 200947116 中’對利用色差較小之i線單色光之期待越來越高漲。 又,於要求高解像度之用途中,為避免支持體中所含之潤 α劑等之景彡響’有時預先將支持體剝離後再進行曝光。但 疋’先刖之使用乾膜抗餘劑之曝光方法中,如圖2所示, 會產生抗姓劑頂部之抗敍劑粗大以及抗钱劑底部之抗姓劑 細窄’抗蝕劑之尺寸再現性存在問題。又,於預先將支持 體剝離後再進行曝光之情形時’如後述之圖4所示,抗蝕 劑剖面形狀變成「線軸狀(b〇bbin)」,又抗姓劑殘足較大, 因此抗蝕劑之尺寸再現性存在問題。 使用乾膜抗姓劑來製造印刷配線板之方法包括:使用超 高壓水銀燈所發出之i線(波長為365 nm)等紫外線,經由具 有配線圖案之光罩對負型感光性樹脂層進行曝光,藉此使 曝光部分聚合硬化之步驟;利用具有弱鹼性之水溶液等顯 影液’將負型感光性樹脂層之未曝光部分溶解去除或分散 去除之步驟;以及其他步驟。尚不明確係於哪一步驟中產 生了引起抗蝕劑頂部之粗大及抗蝕劑底部之細窄、雨抗蝕 劑剖面形狀形成為線轴狀、以及抗蝕劑殘足較大之原因。 於專利文獻1中,有關於規定了波長365 nm下之吸光度 的乾膜抗蝕劑之記載。但是,專利文獻1中並無關於i線單 色曝光之記載。又’專利文獻1中並無關於預先將支持體 剝離之後再進行曝光之記載。 [專利文獻1]曰本專利特開2006-145565號公報 【發明内容】 [發明所欲解決之問題] 136693.doc 200947116 本發明之課題在於提供一種顯影後具有密接性及解像性 優異之抗蝕劑圖案以及優異之抗蝕劑形狀的抗蝕劑硬化物 之製造方法、負型感光性樹脂積層體、及負型感光性樹脂 積層體之使用方法。 [解決問題之技術手段] 本發明者為解決上述課題而反覆銳意研究,結果此次驚 異地發現’在對具有支持體(A)、負型感光性樹脂層(B)、 以及基板(C)之負型感光性樹脂積層體進行曝光時,藉由 改變該負型感光性樹脂層(B)之光線透過率,具體而言, 藉由使用波長365 nm下之光線透過率為25%以上、50%以 下的負型感光性樹脂層(B),與使用具有先前之光線透過 率之負型感光性樹脂層而製造之抗蝕劑相比,顯影後之抗 蝕劑圖案之密接性、解像性以及抗蝕劑形狀得到顯著改 善,從而完成本發明。又,本發明者發現,在對具有負型 感光性樹脂層之積層體進行i線單色曝光時,若使用包 含:含有(a)羧基含量以酸當量計為ι〇〇〜6〇〇且重量平均分 子量為5,000〜5〇〇,〇〇〇的黏合劑用樹脂2〇〜9〇質量%、⑻可 進行光聚合之不飽和化合物3〜7〇質量%、以及(c)光聚合起 始劑0.1〜20質量%的感光性樹脂組合物,且波長365 下 之光線透過率為25%以上、5〇%以下的負型感光性樹脂 層,則與使用具有上述範圍外之光線透過率的負型感光性 樹脂層之情形相比,顯影後之抗蝕劑圖案之密接性、解像 性以及抗蝕劑形狀得到顯著改善,從而完成本發明。具體 而言’上述課題係藉由下述[丨]〜[28]之發明而得到解決。 136693.doc 200947116 π]一種抗蝕劑硬化物之製造方法,其係包括: 積層體形成步驟’其形成至少由支持體㈧、負型感光 樹月曰層(B)與基板(c)所積層而成之負型感光性樹脂積層 體; 曝光步驟’其使用使光罩之像投影之光,經由透鏡對該 負型感光性樹脂層(B)進行曝光;以及 顯影步驟,其藉由顯影去除該負型感光性樹脂層⑻之 未曝光部,而形成包含該負型感光性樹脂層(B)之硬化部 之抗姓劑硬化物;並且, *亥負型感光性樹脂層(B)於波長365 nm下之光線透過率 為2 5 %以上、5 0 %以下。 [2] 如上述[1 ]之抗蝕劑硬化物之製造方法,其中該光為i 線單色光。 [3] 如上述[1]或[2]之抗蝕劑硬化物之製造方法,其中於 該積層體形成步驟與該曝光步驟之間,進一步包括自該負 型感光性樹脂層(B)上剝離該支持體(A)之支持體剝離步 驟。 [4] 如上述[1 ]至[3]中任一項之抗蝕劑硬化物之製造方 法’其中該負型感光性樹脂層(B)於波長365 nm下之光線 透過率為35%以上、45%以下。 [5] 如上述[1]至[4]中任一項之抗蝕劑硬化物之製造方 法,其中該負型感光性樹脂層(B)包含:負型感光性樹脂 組合物,該負型感光性樹脂組合物係含有(a)叛基含量以酸 當量計為100〜600、且重量平均分子量為5,000〜500,000之 136693.doc 200947116 間之點合劑用樹脂20〜90質量%、(b)可進行光聚合之不飽 和化合物3〜70質量%、以及(c)光聚合起始劑〇1〜2〇質量 〇/〇。 [6] 如上述[5]之抗蝕劑硬化物之製造方法,其中含有選 自由二笨曱鲖及二苯甲酮衍生物所組成群中之至少1種化 合物作為該(c)光聚合起始劑。 [7] 如上述[5]或[6]之抗蝕劑硬化物之製造方法,其中含 有2,4,5·三芳基咪唑二聚物作為該(〇光聚合起始劑。 [8] 如上述[5]至[7]中任一項之製造方法,其中含有選自 ◎ 由一苯甲酮及二苯曱酮衍生物所組成群中之至少1種化合 物 '與2’4,5-三彡基咪„坐二聚物兩者’作為該⑷光聚合起 始劑。 [9] 如上述[5]至[8]中任一項之抗蝕劑硬化物之製造方 法,其中該(b)可進行光聚合之不飽和化合物係選自由以下 述通式(I)所表示之化合物及以下述通式所表示之化合 物所組成的群·· [化 1] 〇[Technical Field] The present invention relates to a method for producing a resist cured product comprising the steps of using a negative photosensitive resin laminate having a negative photosensitive resin layer and The step of exposing the negative photosensitive resin layer. More specifically, the present invention relates to a negative photosensitive resin laminate having a negative photosensitive resin layer suitable for producing a printed circuit (wiring) board, a lead frame, a semiconductor package, etc., to produce a resist cured product. Methods. Further, the present invention relates to a negative photosensitive resin laminated body having a negative photosensitive resin layer for i-line single-color exposure and a method of using a negative photosensitive resin laminated body. More specifically, the present invention relates to a negative type of a negative photosensitive resin layer for i-line monochromatic exposure capable of performing alkaline development, which is suitable for manufacturing a printed circuit (wiring) board, a lead frame, a semiconductor package, or the like. A method of using a photosensitive resin laminate and a negative photosensitive resin laminate. [Prior Art] Previously, printed wiring boards were manufactured by photolithography. The photolithography method is a method of forming a pattern by photoreaction of a photosensitive resin composition. When a negative photosensitive resin composition is used, the photosensitive resin composition can be applied onto a substrate to form a photosensitive resin layer, and then the pattern is exposed, and the exposed portion of the photosensitive resin composition is cured by polymerization. And removing the unexposed portion by the developer to form a resist pattern on the substrate, performing etching or plating treatment to form a conductor pattern, and then removing the resist pattern from the substrate to form a conductor pattern on the substrate . In the negative photolithography method, when the negative photosensitive resin composition is applied to a substrate by 136693.doc 200947116, a solution of the negative photosensitive resin composition can be applied to the substrate and dried. A method of laminating a support layer, a layer containing a negative photosensitive resin composition (hereinafter also referred to as a "negative photosensitive resin layer"), and a dry film resist layer of an optional protective layer. Any of the methods on the substrate. When manufacturing a printed wiring board, a method of laminating a dry film resist on a substrate is often used. Hereinafter, a method of manufacturing a printed wiring board using a dry film anti-surname agent will be described. First, when the dry film resist has a protective layer such as a polyethylene film, the protective layer is first peeled off from the negative photosensitive resin layer. Then, a negative photosensitive resin layer and a support are laminated on a substrate, for example, a copper foil laminate, in the order of a substrate, a negative photosensitive resin layer, and a support, using a laminator. Then, the negative photosensitive resin layer is exposed through an ultraviolet ray such as an i-line (having a wavelength of 365 nm) emitted from an ultrahigh pressure mercury lamp via a photomask having a wiring pattern, whereby the exposed portion is polymerized and cured. Then, a support containing polyethylene terephthalate or the like is peeled off. Then, the unexposed portion of the negative photosensitive resin layer is dissolved or removed by a developing solution such as a weakly alkaline aqueous solution to form a resist pattern on the substrate. Then, a known etching process or pattern plating process is performed using the formed resist pattern as a protective mask. Finally, the anti-surname pattern is peeled off from the substrate to produce a substrate having a conductor pattern, that is, a printed wiring board. In recent years, with the miniaturization and weight reduction of electronic devices such as mobile phones and notebook computers, the wiring interval of printed wiring boards has become more and more demanding. In order to cope with this miniaturization requirement, in the exposure method for dry film resists 136693.doc 200947116, the expectation of using i-line monochromatic light having a small color difference is increasing. Further, in the application requiring high resolution, in order to avoid the squeaking of the lubricant or the like contained in the support, the support may be peeled off before exposure. However, in the exposure method using the dry film anti-surplus agent, as shown in Fig. 2, the anti-sufficiency agent at the top of the anti-surience agent and the anti-surname agent at the bottom of the anti-money agent are formed. There is a problem with dimensional reproducibility. In addition, when the support is peeled off and the exposure is performed in advance, as shown in FIG. 4 which will be described later, the cross-sectional shape of the resist becomes "a bobbin shape", and the anti-surname agent has a large residual amount. There is a problem with the dimensional reproducibility of the resist. A method of manufacturing a printed wiring board using a dry film anti-surname agent includes exposing a negative photosensitive resin layer to a negative photosensitive resin layer via a photomask having a wiring pattern by using an ultraviolet ray such as an i-line (having a wavelength of 365 nm) emitted from an ultrahigh pressure mercury lamp. The step of curing the exposed portion by polymerization; the step of dissolving or dispersing the unexposed portion of the negative photosensitive resin layer by a developing solution such as a weakly alkaline aqueous solution; and other steps. It is not clear in which step the cause of the coarseness of the top of the resist and the narrowness of the bottom of the resist, the cross-sectional shape of the rain resist being formed into a bobbin shape, and the residual of the resist are large. Patent Document 1 describes the dry film resist which defines the absorbance at a wavelength of 365 nm. However, Patent Document 1 does not describe the i-line single-color exposure. Further, Patent Document 1 does not describe the exposure after the support is peeled off in advance. [Patent Document 1] JP-A-2006-145565 SUMMARY OF INVENTION [Problems to be Solved by the Invention] 136693.doc 200947116 An object of the present invention is to provide an anti-adhesive and anti-dissolution property after development. A method for producing a resist cured product having an excellent resist pattern, a negative photosensitive resin laminate, and a method of using a negative photosensitive resin laminate. [Means for Solving the Problem] The present inventors have made intensive studies to solve the above problems, and as a result, it has been surprisingly found that the pair has a support (A), a negative photosensitive resin layer (B), and a substrate (C). When the negative photosensitive resin laminate is exposed, the light transmittance of the negative photosensitive resin layer (B) is changed, specifically, the light transmittance at a wavelength of 365 nm is 25% or more. 50% or less of the negative photosensitive resin layer (B), compared with a resist produced by using a negative photosensitive resin layer having a previous light transmittance, the adhesion and solution of the resist pattern after development The image and the shape of the resist are remarkably improved to complete the present invention. Moreover, the present inventors have found that when i-line single-color exposure is performed on a laminate having a negative photosensitive resin layer, the inclusion includes: (a) the carboxyl group content is io 〇〇 〇〇 6 以 in terms of acid equivalent The weight average molecular weight is 5,000 to 5 Å, the binder for the binder is 2 〇 to 9 〇 mass%, (8) the photopolymerizable unsaturated compound 3 to 7 〇 mass%, and (c) the photopolymerization initiation When the photosensitive resin composition of 0.1 to 20% by mass of the coating agent has a light transmittance of 25% or more and 5% by weight or less at a wavelength of 365, the light transmittance of the negative photosensitive resin layer having the above range is used. In the case of the negative photosensitive resin layer, the adhesion, the resolution, and the resist shape of the resist pattern after development are remarkably improved, thereby completing the present invention. Specifically, the above problems are solved by the following inventions [丨] to [28]. 136693.doc 200947116 π] A method for producing a resist cured product, comprising: a layer forming step of forming a layer formed by at least a support (8), a negative photosensitive tree layer (B) and a substrate (c) a negative photosensitive resin laminate; an exposure step of exposing the negative photosensitive resin layer (B) through a lens using light projected from the image of the mask; and a developing step of removing by development The unexposed portion of the negative photosensitive resin layer (8) forms an cured product of an anti-surname agent containing the cured portion of the negative photosensitive resin layer (B); and the negative photosensitive resin layer (B) is The light transmittance at a wavelength of 365 nm is 25% or more and 50% or less. [2] The method for producing a cured resist of the above [1], wherein the light is i-line monochromatic light. [3] The method for producing a cured resist of the above [1] or [2], wherein the layer forming step and the exposing step are further included from the negative photosensitive resin layer (B) The support peeling step of the support (A) is peeled off. [4] The method for producing a cured resist of any one of the above [1] to [3] wherein the negative photosensitive resin layer (B) has a light transmittance of 35% or more at a wavelength of 365 nm. , 45% or less. [5] The method for producing a cured resist of any one of the above [1] to [4] wherein the negative photosensitive resin layer (B) comprises: a negative photosensitive resin composition, the negative type The photosensitive resin composition contains (a) a resin having a reciprocal content of from 100 to 600 in terms of an acid equivalent, and a weight average molecular weight of from 5,000 to 500,000, 136,693.doc 200947116, a resin for a dispensing agent, 20 to 90% by mass, (b) 3 to 70% by mass of the photopolymerizable unsaturated compound, and (c) photopolymerization initiator 〇1 to 2 〇 mass 〇/〇. [6] The method for producing a cured cured material according to the above [5], which comprises at least one compound selected from the group consisting of a bismuth and a benzophenone derivative as the (c) photopolymerization Starting agent. [7] The method for producing a cured resist of the above [5] or [6], which comprises a 2,4,5·triarylimidazole dimer as the (photopolymerization initiator). The production method according to any one of the above [5] to [7] wherein at least one compound selected from the group consisting of benzophenone and a benzophenone derivative is used, and 2'4,5- The method of producing a cured film of a resist according to any one of the above [5] to [8], wherein the b) The unsaturated compound which can be photopolymerized is selected from the group consisting of a compound represented by the following formula (I) and a compound represented by the following formula: [Chemical Formula 1] 〇
Hzc C=CHz (1) Ο {式中’ R8及R9獨立為Η或CH3,且η2 、η3及ru分別獨立為 3〜20之整數}; ''' 136693.doc -10- 200947116 [化2]Hzc C=CHz (1) Ο {wherein R8 and R9 are independently Η or CH3, and η2, η3, and ru are each independently an integer of 3 to 20}; ''' 136693.doc -10- 200947116 [Chemical 2 ]
0 Α-0》ιι·1 an «ΟΗ2 110 Α-0》ιι·1 an «ΟΗ2 11
{式中’ Ri〇及R】i獨立為H或CH3 ’ A為C2H4,B為c3Hg, ri5+n6為.2〜30之整數,Π7+η8為0~30之整數,115及n6獨立為 1〜29之整數,n?及h獨立為〇〜29之整數,重複單元·(Α_〇)_ 及-(Β-0)-之排列可為隨機亦可為嵌段,於為嵌段之情形 時,均可位於雙酚基側}。 [10]—種印刷配線板之製造方法,其係包括以下步驟·· 對基板(C)進行蝕刻或者電鍍之步驟,該基板係具有 藉由如上述[1]至[9]中任一項之製造方法而獲得之抗蝕劑 硬化物所形成的抗蝕劑圖案;以及 自該基板(C)上去除該抗蝕劑硬化物之步驟。 Π1]—種負型感光性樹脂積層體,其係用以藉由使用使 光罩之像投影之i線單色光、經由透鏡對負型感光性樹脂 層進行曝光而形成抗蝕劑硬化物者,並且, 其至少具有支持體(A)及i線單色曝光用之負型感光性樹 脂層(B), 該負型感光性樹脂層(B)包含:蟓單色曝光用之負型感 光性樹脂組合物,㈣型感光性樹脂組合物係含有⑷魏基 136693.doc 200947116 含篁以酸當I計為100〜600、且重量平均分子量為 5,000〜500,000之間之黏合劑用樹脂2〇〜9〇質量。/。、(b)可進 行光聚合之不飽和化合物3〜70質量%、以及(c)光聚合起始 劑0.1〜20質量%的,且 該負型感光性樹脂層(B)於波長365 nm下之光線透過率 為25%以上、50%以下。 [12] 如上述[11]之負型感光性樹脂積層體,其中該負型 感光性樹脂層(B)於波長3 65 nm下之光線透過率為35 %以 上、45%以下。 [13] 如上述[11]或[12]之負型感光性樹脂積層體,其中該 (a)黏合劑用樹脂之玻璃轉移溫度為1 〇〇〇c以上。 [14] 如上述[11]至[13]中任一項之負型感光性樹脂積層 體 其中*亥(a)黏合劑用樹脂之重量平均分子量為 10,000 〜40,000之間。 [15] 如上述[11]至[14]中任一項之負型感光性樹脂積層 體’其含有選自由二苯曱酮及二苯甲酮衍生物所組成群中 之至少1種化合物作為該(…光聚合起始劑。 [16] 如上述[丨丨彳至!^ 5]中任一項之負型感光性樹脂積層 體’其含有2,4,5-三芳基咪唑二聚物作為該(c)光聚合起始 劑。 [17] 如上述[11]至[16]中任一項之負型感光性樹脂積層 體’其含有選自由二苯甲酮及二苯甲酮衍生物所組成群中 之至少1種化合物、與2,4,5·三芳基咪唑二聚物兩者,作為 該(C)光聚合起始劑。 136693.doc -12- 200947116 [18]如上述[丨”至[17]中任一項之負型感光性樹脂積層 體’其中該(b)可進行光聚合之不飽和化合物係選自由以下 述通式(I)所表示之化合物及以下述通式(11)所表示之化合 物所組成的群: [化3] h2c 〇-(C2H4〇)n2-(C3He〇)n3-(C2H4〇)n4-C-C=CH2 (【) ΟIn the formula, ' Ri〇 and R】i are independently H or CH3 'A is C2H4, B is c3Hg, ri5+n6 is an integer of .2~30, Π7+η8 is an integer from 0 to 30, and 115 and n6 are independent An integer from 1 to 29, n? and h are independently integers from 〇 to 29, and the arrangement of repeating units · (Α_〇)_ and -(Β-0)- may be random or block, as a block In the case of both, it can be located on the bisphenol side}. [10] A method of manufacturing a printed wiring board, comprising the steps of: etching or plating a substrate (C) having any one of [1] to [9] as described above; a resist pattern formed by the resist cured product obtained by the manufacturing method; and a step of removing the resist cured material from the substrate (C). Π1] A negative photosensitive resin laminate for forming a resist cured product by exposing a negative photosensitive resin layer through a lens using i-line monochromatic light that projects an image of a photomask Further, it has at least a support (A) and a negative photosensitive resin layer (B) for i-line single-color exposure, and the negative photosensitive resin layer (B) includes a negative type for monochromatic exposure. The photosensitive resin composition, (4) type photosensitive resin composition contains (4) Wei Ke 136693.doc 200947116 Resin 2 resin having an acidity of 100 to 600 in terms of I and a weight average molecular weight of 5,000 to 500,000 〇~9〇 quality. /. (b) 3 to 70% by mass of the photopolymerizable unsaturated compound, and (c) 0.1 to 20% by mass of the photopolymerization initiator, and the negative photosensitive resin layer (B) at a wavelength of 365 nm The light transmittance is 25% or more and 50% or less. [12] The negative photosensitive resin laminate according to the above [11], wherein the negative photosensitive resin layer (B) has a light transmittance of 35% or more and 45% or less at a wavelength of 3 65 nm. [13] The negative photosensitive resin laminate according to [11] or [12] above, wherein the (a) binder resin has a glass transition temperature of 1 〇〇〇c or more. [14] The negative photosensitive resin laminate according to any one of the above [11] to [13] wherein the resin for the binder (a) has a weight average molecular weight of from 10,000 to 40,000. [15] The negative photosensitive resin laminate of any one of [11] to [14] which contains at least one compound selected from the group consisting of a benzophenone and a benzophenone derivative. The photo-polymerization initiator [16] The negative-type photosensitive resin laminate according to any one of the above-mentioned [丨丨彳 to !^ 5], which contains a 2,4,5-triarylimidazole dimer The negative photosensitive resin laminate according to any one of the above [11] to [16], which is selected from the group consisting of benzophenone and benzophenone. At least one of the compound group and the 2,4,5·triarylimidazole dimer are used as the (C) photopolymerization initiator. 136693.doc -12- 200947116 [18] as described above The negative photosensitive resin laminate of any one of [17], wherein the (a) photopolymerizable unsaturated compound is selected from the group consisting of the compound represented by the following formula (I) and A group consisting of a compound represented by the formula (11): [Chemical 3] h2c 〇-(C2H4〇)n2-(C3He〇)n3-(C2H4〇)n4-CC=CH2 ([) Ο
{式中,Rs及R_9獨立為Η或CH3,且η2、Π3及η4分別獨立為 3〜20之整數}; [化4]In the formula, Rs and R_9 are independently Η or CH3, and η2, Π3, and η4 are each independently an integer of 3 to 20}; [Chemical 4]
(ID 0-(Α-Ο)ηβ-<Β*Ο)ι», 11Γ {式中’ R丨0及R"獨立為Η或CH3,Α為C2H4,Β為c3H , h+n6為2〜3〇之整數,h+h為〇〜3〇之整數,ns及%獨立為 1〜29之整數,n?及ns獨立為〇〜29之整數,會遴留_ ^ 里復早兀·(△_〇)_ 及-(B-0)-之排列可為隨機亦可為嵌段,於為嵌段之情形 時,均可位於雙酚基側}。 [19]如上述[11]至[18]中任一項之負型感# 貝主认尤性樹脂積層 體’其於該負型感光性樹脂層(B)上進一步具有保護層 136693.doc -13- 200947116 [20] —種負型感光性樹脂積層體之使用方法,其在藉由 使用使光罩之像投影之i線單色光、經由透鏡對負型感光 性樹脂層進行曝光而形成抗蝕劑硬化物時,使用如丁負型 感光性樹脂積層體,該負型感光性樹脂積層體係至少具有 支持體(A)及i線單色曝光用之負型感光性樹脂層(B)者,並 且該負型感光性樹脂層(B)包含:含有(a)羧基含量以酸當 量計為100〜600、且重量平均分子量為5,〇〇〇〜5〇〇,〇〇〇之間 之黏合劑用樹脂20〜90質量%、(b)可進行光聚合之不飽和 化合物3〜70質量%、以及(c)光聚合起始劑〇·丨〜2〇質量%的} 線單色曝光用之負型感光性樹脂組合物,且該負型感光性 樹脂層(B)於波長365 nm下之光線透過率為25%以上、50% 以下。 [21] 如上述[20]之負型感光性樹脂積層體之使用方法, 其中該負型感光性樹脂層(B)於波長365 nm下之光線透過 率為3 5 %以上、4 5 %以下。 [22] 如上述[20]或[21]之負型感光性樹脂積層體之使用方 法,其中該(a)黏合劑用樹脂之玻璃轉移溫度為! 〇〇。〇以 上。 [23] 如上述[20]至[22]中任一項之負型感光性樹脂積層體 之使用方法,其中該(a)黏合劑用樹脂之重量平均分子量為 10,000〜4〇,〇〇〇之間。 [24] 如上述[2〇]至[23]中任一項之負型感光性樹脂積層體 之使用方法,其中含有選自由二苯曱酮及二苯曱酮衍生物 所組成群中之至少1種化合物作為該((〇光聚合起始劑。 136693.doc •14· 200947116 [25] 如上述[20]至[24]中任一項之負型感光性樹脂積層體 之使用方法,其中含有2,4,5-三芳基咪唑二聚物作為該(c) 光聚合起始劑。 [26] 如上述[20]至[25]中任一項之負型感光性樹脂積層體 之使用方法,其中含有選自由二苯曱酮及二苯甲酮衍生物 所組成群中之至少1種化合物、與2,4,5-三芳基咪唑二聚物 兩者,作為該(c)光聚合起始劑。 [27] 如上述[20]至[26]中任一項之負型感光性樹脂積層體 之使用方法,其中該(b)可進行光聚合之不飽和化合物係選 自由以下述通式(I)所表示之化合物及以下述通式(II)所表 示之化合物所組成的群: [化5](ID 0-(Α-Ο)ηβ-<Β*Ο)ι», 11Γ {wherein R丨0 and R" are independent Η or CH3, Α is C2H4, Β is c3H, h+n6 is 2 An integer of ~3〇, h+h is an integer of 〇~3〇, ns and % are independent integers of 1~29, n? and ns are independent integers of 〇~29, and will be reserved _ ^ The arrangement of (Δ_〇)_ and -(B-0)- may be random or block, and in the case of a block, it may be located on the bisphenol side}. [19] The negative-type sensible resin laminate of any one of the above [11] to [18] which further has a protective layer 136693.doc on the negative photosensitive resin layer (B). -13-200947116 [20] A method of using a negative photosensitive resin laminate, which exposes a negative photosensitive resin layer through a lens by using i-line monochromatic light that projects an image of a photomask In the case of forming a cured resist, a negative-type photosensitive resin laminate is used, and the negative photosensitive resin laminate system has at least a support (A) and a negative photosensitive resin layer for i-line monochromatic exposure (B). And the negative photosensitive resin layer (B) contains: (a) a carboxyl group content of 100 to 600 in terms of acid equivalent, and a weight average molecular weight of 5, 〇〇〇~5 〇〇, 〇〇〇 20 to 90% by mass of the binder resin, (b) 3 to 70% by mass of the photopolymerizable unsaturated compound, and (c) photopolymerization initiator 〇·丨~2〇% by mass} Negative photosensitive resin composition for color exposure, and the negative photosensitive resin layer (B) transmits light at a wavelength of 365 nm More than 25%, 50% or less. [21] The method of using the negative photosensitive resin laminate according to the above [20], wherein the negative photosensitive resin layer (B) has a light transmittance of 35% or more and 45% or less at a wavelength of 365 nm. . [22] The method of using the negative photosensitive resin laminate of the above [20] or [21], wherein the glass transition temperature of the (a) binder resin is! Hey. More than one. [23] The method of using the negative photosensitive resin laminate according to any one of the above [20] to [22] wherein the (a) binder resin has a weight average molecular weight of 10,000 to 4 Å, 〇〇〇 between. [24] The method of using a negative photosensitive resin laminate according to any one of the above [2] to [23], wherein at least one selected from the group consisting of a benzophenone and a benzophenone derivative is contained A method of using a negative photosensitive resin laminate according to any one of the above [20] to [24], wherein the compound is used as a method of using a compound of the above-mentioned [20] to [24], wherein The use of the 2,4,5-triarylimidazole dimer as the (c) photopolymerization initiator. [26] Use of the negative photosensitive resin laminate according to any one of the above [20] to [25] a method comprising, as the (c) photopolymerization, at least one compound selected from the group consisting of a benzophenone and a benzophenone derivative, and a 2,4,5-triarylimidazole dimer [27] The method of using the negative photosensitive resin laminate according to any one of the above [20] to [26] wherein the (a) photopolymerizable unsaturated compound is selected from the group consisting of A group consisting of a compound represented by the formula (I) and a compound represented by the following formula (II): [Chemical 5]
(C2H4〇)n2-(C3H80)n3-(C2H40)n4-C(C2H4〇)n2-(C3H80)n3-(C2H40)n4-C
{式中,R8及R9獨立為Η或CH3,且n2、n3及n4分別獨立為 〇 3〜20之整數}; [化6]In the formula, R8 and R9 are independently Η or CH3, and n2, n3 and n4 are each independently an integer of 〜3~20}; [Chem. 6]
It C—CH3 136693.doc -15- 200947116 {式中’ R丨〇及Rn獨立為Η或CH3 ’ A為C2H4,B為C3H6, ns+iu為2〜30之整數,new為〇〜30之整數,〜及…獨立為 1〜29之整數’ η?及ns獨立為〇〜29之整數,重複單元_(Α〇)_ 及-(Β-Ο)-之排列可為隨機亦可為嵌段,於為嵌段之情形 時’均可位於雙酚基側}。 [28]如上述[20]至[27]中任一項之負型感光性樹脂積層體 之使用方法,其中於該負型感光性樹脂層(Β)上進一步具 有保護層。 [發明之效果] 根據本發明,可獲得顯影後之密接性及解像性優異之抗 蝕劑圖案以及優異之抗蝕劑形狀。 【實施方式】 於本發明之一態樣中,提供一種抗兹劑硬化物之製造方 法,其包括: 積層體形成步驟,其形成至少由支持體(Α)、負型感光 性樹脂層(Β)與基板(c)所積層而成之負型感光性樹脂積層 β]||κ · 體, 曝光步驟,其使用使光罩之像投影之光,經由透鏡對該 負型感光性樹脂層(Β)進行曝光;以及 顯影步驟,其藉由顯影去除該負型感光性樹脂層⑺)之 未曝光部,而形成包含該負型感光性樹脂層(]8)之硬化部 之抗钱劑硬化物;並且, 該負型感光性樹脂層(Β)於波長365 ηιητ之光線透過率 為25%以上、50%以下。 136693.doc 200947116 於本發明之其他態樣中,提供一種負型感光性樹脂積層 體,其係用以藉由使用使光罩之像投影之i線單色光、經 由透鏡對負型感光性樹脂層進行曝光而形成抗钱劑硬化物 者,並且, 其至少具有支持體(八)及丨線單色曝光用之負型感光性樹 脂層(B), ,該負型感光性樹脂層包含:1線單色曝光用之負型感 光性樹脂組合物,該負型感光性樹脂組合物係含有(a)羧基 含量以酸當量計為100〜600、且重量平均分子量為 5,000〜50〇,〇〇〇之間之黏合劑用樹脂2〇〜9〇質量%、(匕)可進 行光聚合之不飽和化合物3〜7〇質量%、以及(c)光聚合起始 劑0.1〜20質量%,且 忒負型感光性樹脂層(B)於波長365 ηιητ之光線透過率 為25%以上、50%以下。 :本發月之另其他態樣中,提供一種負型感光性樹脂 〇 積層體之使用方法,其在藉由使用使光罩之像投影之ί線 單色光、、經由透鏡對負型感光性樹脂層進行曝光而形成抗 敍劑硬化物時,使用如下負型感光性樹脂積層體,該負型 感光性樹脂積層體係至少具有支持體(Α)及i線單色曝光用 之負型感光性樹脂層(B)者’並且該負型感光性樹脂層⑻ ^ 3丨線單色曝光用之負型感光性樹脂組合物,該負型 感光性樹脂組合物係含有(a)羧基含量以酸當量計為 100〜600、且重量平均分子量為5 〇〇〇〜5〇〇 〇〇〇之間之黏合 劑用樹脂20〜90質量%、⑻可進行光聚合之不飽和化合物 136693.doc 200947116 3〜70質量%、以及(c)光聚合起始劑〇·ΐ〜2〇質量%,且該負 型感光性樹脂層(B)於波長365 nm下之光線透過率為25%以 上、50%以下。 本說明書中’用語「負型感光性樹脂層(B)」,係指藉由 以活性光線曝光、然後進行顯影而獲得負型之圖案之樹脂 層。又’所謂「i線單色曝光用之負型感光性樹脂層(B)」, 係指上述負型感光性樹脂層(B)中,可藉由1線(波長為365 nm)單色下之曝光以及其後之解像而獲得所期望之抗蝕劑 圖案者。本發明之負型感光性樹脂層(B)於波長nm下 之光線透過率為25%以上、50%以下。當波長365 nm下之 光線透過率為上述範圍時,與為上述範圍以外之光線透過 率之情形相比,可獲得密接性及解像性優異之抗蝕劑圖 案,且抗餘劑尺寸再現性良好。又,於本發明之提供負型 感光性樹脂積層體以及負型感光性樹脂積層體之使用方法 之態樣中,藉由使波長365 nm下之光線透過率為上述範 圍,可使得在藉由使用使光罩之像投影之丨線單色光、經 由透鏡對負型感光性樹脂層進行曝光而形成抗蝕劑硬化物 之情形時,與上述範圍以外之光線透過率之情形相比,可 獲得密接性及解像性優異之抗蝕劑圖案,且抗蝕劑尺寸再 現性良好。於藉由使用使光罩之像投影之光、經由透鏡對 負型感光性樹脂層進行曝光而形成抗蝕劑硬化物之情形 時,抗蝕劑剖面形狀會成為倒梯形,產生抗蝕劑頂部之粗 大以及抗㈣底部之細窄’有抗㈣尺寸再現性問題。 又’於預先剝離支持體然後進行曝光之態樣中,於藉由使 136693.doc 200947116 用上述使光罩之像投影之光、經由透鏡對負型感光性樹脂 層進行曝光而形成抗㈣硬化物之情料,抗㈣丨剖面形 狀會成為線軸狀,且抗蝕劑殘足較大,因此有抗蝕劑尺寸 再現性問題。另一方面,於上述光線透過率超過50%之情 形夺因負型感光性樹脂層(B)無法有效地吸收所曝光之 光,故存在曝光感光度下降之問題。在利用丨線單色光 ¥該等問題更為顯著。因此,就解決該等問題、製成優 ”之抗蝕劑形狀之觀點而言,負型感光性樹脂層(B)於波 長365 nm下之光線透過率為25%以上、5〇%以下。就抗钱 劑圖案之密接性、解像性以及曝光感光度之觀點而言,本 發明之負型感光性樹脂層(B)於波長365 下之光線透過 率更好的是30%以上、45%以下’進而更好的是35%以 上、45%以下。 作為調整負型感光性樹脂層(B)於波長365 ηιητ之光線 透過率之方法,可列舉:於用以形成負型感光性樹脂層 (Β)之負型感光性樹脂組合物中添加紫外線吸收劑之方 法,或者對光聚合起始劑之量加以調整之方法。作為紫外 線吸收劑,可列舉:苯并三唑系、二苯曱酮系、水揚酸酯 系、氰基丙烯酸酯系、鎳系、三畊系等。作為苯并三唑系 紫外線吸收劑,可例示:2_(2_羥基_5_第三丁基苯基)_2η· 苯并三唑、苯丙酸3-(2Η-苯并三唑_2_基)-5-(1,1_二甲基乙 基)-4-羥基C7.9側鏈及直鏈烷基酯、2_(211_苯并三唑_2_基)_ 4,6-雙(1-甲基-ΐ_苯基乙基)苯酚。 作為光聚合起始劑,就可期待進一步提高抗蝕劑圖案之 136693.doc -19· 200947116 密接性及解像性之觀點而言,特別好的是選擇後述之選自 由一苯甲酮及二苯甲酮衍生物所組成群中的至少丨種化合 物。 作為測定本發明之負型感光性樹脂層(B)於波長365 nm 下之光線透過率的方法,有下述方法:於支持體上形成負 型感光性樹脂層(B) ’將支持體放入參照光側並除去支持 體部分,利用分光光度計(日立高新技術(mtachi出幼_ Technologies)公司製造之U 331〇),將狹縫(s丨⑴設定為4 nm、掃描速度設定為nm/jjjin進行測定。 ❹ 本發明之負型感光性樹脂層(B)可由含有(a)羧基含量以 酸當量計為100〜600、且重量平均分子量為5〇〇〇〜5〇〇〇〇〇 之間之黏合劑用樹脂20〜90質量%、(b)可進行光聚合之不 ο飽和化合物3〜70質量%、以及(c)光聚合起始劑〇卜2〇質量 %的負型感光性樹脂組合物所形成。 黏合劑用樹脂中之羧基係為對負型感光性樹脂層賦予針 對鹼性水溶液之顯影性或剝離性所必需者。至於黏合劑用 樹脂2之羧基之量,就耐顯影性、解像性以及密接性之觀 ◎ 點而言,較好的是以酸當量計為1〇〇以上,就顯影性及剝 離性之觀點而t ’較好的是600以了。更好的是以酸當量 计可達到250〜400。於本發明之提供負型感光性樹脂積層 體以及負型感光性樹脂積層體之使用方法的態樣中,上述 酸當量為100〜600,較好的是3〇〇〜4〇〇。所謂酸當量係指 其中具有1當量之m基之聚合物(即黏合劑用樹脂)的質量 (克當量)。 136693.doc •20· 200947116 酸當量係使用平沼產業股份有限公司製造之平沼自動滴 定裝置(COM-5 5 5),使用〇·! mol/L之氫氧化鈉利用電位滴 定法來測定。 本發明之(a)黏合劑用樹脂之重量平均分子量可為 5,000〜500,000之間。就顯影性之觀點而言,(&)黏合劑用 樹脂之重量平均分子量較好的是500,000以下,就蓋孔 (tenting)膜強度及減少邊緣熔融(edge fuse)之觀點而言, 較好的是5,000以上。為進一步提高本發明之效果,(a)黏 合劑用樹脂之重量平均分子量較好的是20,000〜300,000之 間。又,於本發明之提供負型感光性樹脂積層體以及負型 感光性樹脂積層體之使用方法的態樣中,上述重量平均分 子量為5,000〜500,000之間,就提高使用投影曝光機進行i 線單色曝光時之解像度的觀點而言,該重量平均分子量較 好的是1〇,〇〇〇〜40,000之間。 重量平均分子量可使用日本分光股份有限公司製造之凝 膠滲透層析儀(Gel Permeation Chromatography, GPC)[泵: Gulliver,PU-1580型;管柱:將4根昭和電工股份有限公 司製造之 Shodex(註冊商標)(KF-807、KF-806M、KF· 806M、KF-802.5)串聯;移動床溶劑:四氫呋喃;使用聚 苯乙烯標準樣品(昭和電工股份有限公司製造之Shodex STANDARD SM-105 Polystyrene)之校準曲線]而求得。 (a)黏合劑用樹脂之玻璃轉移溫度,就密接性之觀點而 言,較好的是l〇〇°C以上。(a)黏合劑用樹脂之玻璃轉移溫 度更好的是l〇〇°C以上、120°C以下。 136693.doc • 21 - 200947116 本發明中之(a)黏合劑用樹脂之玻璃轉移溫度可利用下述 FOX式而算出: [數1] 丄=!+W-.+lIt C—CH3 136693.doc -15- 200947116 {wherein R 丨〇 and Rn are independently Η or CH3 ' A is C2H4, B is C3H6, ns+iu is an integer from 2 to 30, and new is 〇~30 Integer, ~ and ... are independent integers from 1 to 29 'η? and ns are independent integers from 〇 to 29, and the arrangement of repeating units _(Α〇)_ and -(Β-Ο)- can be random or embedded. In the case of the block, it can be located on the bisphenol side. [28] The method of using the negative photosensitive resin laminate according to any one of the above [20] to [27] wherein the negative photosensitive resin layer further has a protective layer. [Effect of the Invention] According to the present invention, a resist pattern excellent in adhesion and resolution after development and an excellent resist shape can be obtained. [Embodiment] In one aspect of the invention, there is provided a method for producing a cured product of a sizing agent, comprising: a layer forming step of forming at least a support (Α), a negative photosensitive resin layer (Β a negative photosensitive resin laminated layer formed by laminating the substrate (c), a film, and an exposure step, which uses light projected from the image of the photomask to pass the negative photosensitive resin layer through the lens (进行) performing exposure; and a developing step of removing the unexposed portion of the negative photosensitive resin layer (7) by development to form an hardened agent hardened portion including the hardened portion of the negative photosensitive resin layer (8) Further, the negative photosensitive resin layer has a light transmittance of 25% or more and 50% or less at a wavelength of 365 ηηητ. 136693.doc 200947116 In another aspect of the present invention, a negative photosensitive resin laminate is provided for use in negative-type photosensitive light through a lens by using i-line monochromatic light for projecting an image of a photomask The resin layer is exposed to form a cured product of an anti-money agent, and has at least a support (8) and a negative-type photosensitive resin layer (B) for monochromatic exposure, wherein the negative-type photosensitive resin layer includes A negative photosensitive resin composition for one-line single-color exposure, wherein the negative photosensitive resin composition contains (a) a carboxyl group content of from 100 to 600 in terms of acid equivalent, and a weight average molecular weight of 5,000 to 50 Å. The binder for the adhesive between the crucibles is 2 to 9 mass%, the photopolymerizable unsaturated compound is 3 to 7 mass%, and (c) the photopolymerization initiator is 0.1 to 20 mass%. The light transmittance of the negative photosensitive resin layer (B) at a wavelength of 365 ηιητ is 25% or more and 50% or less. In another aspect of the present month, a method of using a negative photosensitive resin stratified layer is provided, which uses a monochromatic light that projects an image of a reticle to be negatively sensitized via a lens. When the resin layer is exposed to form a cured agent, a negative photosensitive resin laminate is used, and the negative photosensitive resin layer system has at least a support (Α) and a negative photosensitive for i-line monochrome exposure. The resin layer (B) and the negative photosensitive resin layer (8) are a negative photosensitive resin composition for monochromatic exposure, and the negative photosensitive resin composition contains (a) a carboxyl group content. The acid equivalent is from 100 to 600, and the weight average molecular weight is from 5 to 90% by mass of the resin for binders, and (8) the photopolymerizable unsaturated compound is 136693.doc 200947116 3 to 70% by mass, and (c) photopolymerization initiator 〇·ΐ~2〇% by mass, and the light transmittance of the negative photosensitive resin layer (B) at a wavelength of 365 nm is 25% or more, 50 %the following. In the present specification, the term "negative photosensitive resin layer (B)" means a resin layer obtained by exposing with active light and then developing to obtain a negative pattern. Further, the term "negative photosensitive resin layer (B) for i-line monochromatic exposure" means that the negative photosensitive resin layer (B) can be monochromatic (by a wavelength of 365 nm) in a single color. The exposure and subsequent resolution are used to obtain the desired resist pattern. The negative photosensitive resin layer (B) of the present invention has a light transmittance of 25% or more and 50% or less at a wavelength nm. When the light transmittance at a wavelength of 365 nm is in the above range, a resist pattern excellent in adhesion and resolution can be obtained as compared with a case where the light transmittance is outside the above range, and the resist reproducibility is reproducible. good. Further, in the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate according to the present invention, by making the light transmittance at a wavelength of 365 nm into the above range, When a resist-cured material is formed by exposing a negative-type photosensitive resin layer to a negative photosensitive resin layer by a lens by projecting the monochromatic light of the image of the reticle, compared with the case of light transmittance other than the above range A resist pattern excellent in adhesion and resolution is obtained, and resist reproducibility is good. When a resist cured product is formed by exposing the negative photosensitive resin layer to light through a lens, the resist cross-sectional shape becomes an inverted trapezoid, and a resist top is generated. The coarseness and the resistance of the (four) bottom are narrow and have anti-(four) size reproducibility problems. Further, in a state in which the support is peeled off in advance and then exposed, the light is projected by immersing the light of the image of the mask described above with 136693.doc 200947116, and the negative photosensitive resin layer is exposed through the lens to form an anti-(four) hardening. As a result of the material, the cross-sectional shape of the anti-(four) crucible is a bobbin shape, and the resist residue is large, so there is a problem of resist size reproducibility. On the other hand, in the case where the above light transmittance exceeds 50%, the negative photosensitive resin layer (B) cannot effectively absorb the exposed light, so that there is a problem that the exposure sensitivity is lowered. In the use of 丨 line monochromatic light ¥ These issues are more significant. Therefore, from the viewpoint of solving such problems and producing a superior resist shape, the light transmittance of the negative photosensitive resin layer (B) at a wavelength of 365 nm is 25% or more and 5% or less. The light transmittance of the negative photosensitive resin layer (B) of the present invention at a wavelength of 365 is more preferably 30% or more, from the viewpoint of the adhesion of the anti-money agent pattern, the resolution, and the exposure sensitivity. % or less, and more preferably 35% or more and 45% or less. As a method of adjusting the light transmittance of the negative photosensitive resin layer (B) at a wavelength of 365 η ηητ, a method for forming a negative photosensitive resin is exemplified. A method of adding a UV absorber to a negative photosensitive resin composition of a layer or a method of adjusting the amount of a photopolymerization initiator. Examples of the ultraviolet absorber include benzotriazole and diphenyl. An anthracene-based, a salicylate-based, a cyanoacrylate-based, a nickel-based, a three-tillage system, etc. As a benzotriazole-based ultraviolet absorber, 2_(2-hydroxy-5_t-butylbenzene) is exemplified Base)_2η·benzotriazole, phenylpropionic acid 3-(2Η-benzotriazol-2-yl)-5-(1,1_二Methyl ethyl)-4-hydroxy C7.9 side chain and linear alkyl ester, 2_(211_benzotriazol-2-yl)-4,6-bis(1-methyl-indole_phenyl Ethyl phenol. As a photopolymerization initiator, it is particularly preferable to select a smear of 136693.doc -19· 200947116 for the adhesion pattern and the resolution. At least a compound of the group consisting of a benzophenone and a benzophenone derivative. As a method of measuring the light transmittance of the negative photosensitive resin layer (B) of the present invention at a wavelength of 365 nm, there are the following methods. : A negative photosensitive resin layer (B) is formed on the support. 'The support is placed on the reference light side and the support portion is removed. The U 331 manufactured by Hitachi High-Tech (Mitachi) is used by a spectrophotometer. 〇), the slit ((丨) is set to 4 nm, and the scanning speed is set to nm/jjjin. ❹ The negative photosensitive resin layer (B) of the present invention may contain (a) a carboxyl group content in terms of acid equivalent. 20~600, and the resin with a weight average molecular weight of 5〇〇〇~5〇〇〇〇〇 is 20~90 The mass %, (b) can be formed by photopolymerization of a negative photosensitive resin composition of 3 to 70% by mass of a saturated compound, and (c) a photopolymerization initiator of 2% by mass. The carboxyl group in the resin is required for imparting developability or releasability to the alkaline aqueous solution to the negative photosensitive resin layer. The amount of the carboxyl group of the resin for the binder 2 is resistant to developability, resolution, and adhesion. In view of the viewpoint, it is preferable that the acid equivalent is 1 Å or more, and from the viewpoint of developability and peelability, t ' is preferably 600. More preferably, it is 250 to 400 in terms of acid equivalent. In the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate according to the present invention, the acid equivalent is from 100 to 600, preferably from 3 to 4 Torr. The acid equivalent means a mass (gram equivalent) of a polymer having a m equivalent of 1 (i.e., a resin for a binder). 136693.doc •20· 200947116 The acid equivalent is measured by the potentiometric titration method using the Sugao automatic titrator (COM-5 5 5) manufactured by Hiranuma Sangyo Co., Ltd. using sodium hydroxide of 〇·! mol/L. The (a) binder resin of the present invention may have a weight average molecular weight of from 5,000 to 500,000. From the viewpoint of developability, the weight average molecular weight of the resin for the adhesive is preferably 500,000 or less, which is preferable from the viewpoint of the strength of the tenting film and the reduction of the edge fuse. It is 5,000 or more. In order to further enhance the effect of the present invention, (a) the weight average molecular weight of the resin for the adhesive is preferably between 20,000 and 300,000. Further, in the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate according to the present invention, the weight average molecular weight is between 5,000 and 500,000, and the i-line is improved by using a projection exposure machine. From the viewpoint of the resolution at the time of monochrome exposure, the weight average molecular weight is preferably between 1 Torr and 40 40,000. The weight average molecular weight can be obtained by using Gel Permeation Chromatography (GPC) manufactured by JASCO Corporation [pump: Gulliver, PU-1580; column: Shodex (manufactured by 4 Showa Denko Co., Ltd.) Registered trademark) (KF-807, KF-806M, KF·806M, KF-802.5) in series; moving bed solvent: tetrahydrofuran; using polystyrene standard sample (Shodex STANDARD SM-105 Polystyrene manufactured by Showa Denko Co., Ltd.) The calibration curve is obtained. (a) The glass transition temperature of the resin for a binder is preferably from 10 C or more in terms of adhesion. (a) The glass transition temperature of the resin for a binder is preferably 10 ° C or more and 120 ° C or less. 136693.doc • 21 - 200947116 In the present invention, (a) the glass transition temperature of the resin for a binder can be calculated by the following FOX formula: [Number 1] 丄=!+W-.+l
Tg Tgl Tg2 Tg3 Tga (其中,Tg表示共聚物之Tg。Tg】、Tg2、Tg3、…、Tgn表示 各均聚物之Tg(K)。Wl、W2、W3、 、Wn表示各單體之 質量%)。 本發明中所使用之⑷黏合劑用樹脂可藉由自下述2種單❿ 體中各選擇1種或者1種以上單體使之共聚合而獲得。第一 單體為分子中具有1個聚合性不飽和基之叛酸或酸針。例 如’可列舉.(曱基)丙歸酸、反丁稀二酸、肉桂酸、丁稀 酸亞甲基丁一酸、順丁稀二酸肝、順丁稀二酸半醋等。 第二單體係以如下方式進行選擇:非酸性且分子中具有 1個聚合性不飽和基,可保持負型感光性樹脂層⑻之顯影 性、對蝕刻及電鍍步驟之耐性'硬化膜之可徺性等各種特 性。作為此種單體,例如可列舉:(甲基)丙缚酸甲醋、(甲0 基)丙烯酸乙醋、(甲基)丙烯酸丁醋、(甲基)丙浠酸2_乙基 己醋等(甲基)丙稀酸烧基醋;(甲基)丙稀酸2_經基乙酯、 (甲基)丙烯酸2-羥基丙酯、(甲基)丙烯腈等。又,就可提 南解像度之觀點而言’較好的是使用具有苯基之乙婦化合 物(例如苯乙烯、(甲基)丙烯酸苄酯)。 本發明之(a)黏合劑用樹脂可藉由如下方式而合成:將上 述單體之混合物用丙鲷、子基乙基綱、異丙醇等溶劑加以 I36693.doc -22- 200947116 稀釋’於所獲得之溶液中添加適量之過氧化苯甲醯、偶氮 異丁腈等自由基聚合起始劑’並進行加熱、授拌。有時亦 可一面將一部分混合物滴加於反應液中一面合成本發明之 (a)黏合劑用樹脂。反應結束後,有時亦進一步添加溶劑以 調整為所期望之濃度。作為合成方法,除溶液聚合以外, 亦可採用塊狀聚合、懸浮聚合、乳化聚合等。 (a)黏合劑用樹脂之含量相對於負型感光性樹脂組合物整 _ 體較好的是20〜90質量%之範圍,更好的是3〇〜7〇質量%之 範圍。(a)黏合劑用樹脂之含量,就藉由曝光、顯影所形成 之抗钮劑圖案具有充分之作為抗蚀劑之特性,例如對蓋 孔、姓刻以及各種電鍍步驟具有充分之耐性的觀點而言, 較好的是20〜90質量%之範圍。又’於本發明之提供負型 感光性樹脂積層體以及負型感光性樹脂積層體之使用方法 的態樣中,(a)黏合劑用樹脂相對於負型感光性樹脂組合物 整體之含篁為20〜90質量%之範圍,較好的是%〜7〇質量% ❹ 之範圍° 於本發明中,(b)可進行光聚合之不飽和化合物較好的 是選自由以下述通式(I)所表示之化合物、以及以下述通式 (Π)所表示之化合物所組成群中的至少1種可進行光聚合之 - 不飽和化合物: 通式(I): [化7] H2C =i-C0-(CzH40)n2~(C3He0)n3-(C2H40)n4-C-0*CH2 (I)Tg Tgl Tg2 Tg3 Tga (where Tg represents the Tg of the copolymer. Tg), Tg2, Tg3, ..., Tgn represents the Tg(K) of each homopolymer. Wl, W2, W3, and Wn represent the mass of each monomer. %). The (4) binder resin used in the present invention can be obtained by copolymerizing one or more monomers selected from the following two kinds of monoterpenes. The first monomer is a tickic acid or acid needle having one polymerizable unsaturated group in the molecule. For example, '(Alkyl) aglycolic acid, transbutyric acid, cinnamic acid, butyric acid methylene butyric acid, cis-succinic acid liver, cis-succinic acid half-vinegar, and the like can be exemplified. The second single system is selected in such a manner that it is non-acidic and has one polymerizable unsaturated group in the molecule, and can maintain the developability of the negative photosensitive resin layer (8), and the resistance to the etching and plating steps. Various characteristics such as ambiguity. Examples of such a monomer include (meth)acrylic acid methyl vinegar, (meth)acrylic acid ethyl vinegar, (meth)acrylic acid butyl vinegar, and (methyl)propionic acid 2 ethhexyl vinegar. (meth)acrylic acid ketone vinegar; (meth)acrylic acid 2_ mercaptoethyl ester, 2-hydroxypropyl (meth)acrylate, (meth)acrylonitrile, and the like. Further, from the viewpoint of the resolution of the south, it is preferred to use a berry compound having a phenyl group (e.g., styrene or benzyl (meth) acrylate). The resin for (a) binder of the present invention can be synthesized by diluting a mixture of the above monomers with a solvent such as propionium, methylidene or isopropanol by I36693.doc -22-200947116 An appropriate amount of a radical polymerization initiator such as benzamidine peroxide or azoisobutyronitrile is added to the obtained solution, and heating and mixing are carried out. In some cases, a part of the mixture may be added dropwise to the reaction liquid to synthesize the (a) binder resin of the present invention. After the completion of the reaction, a solvent may be further added to adjust to a desired concentration. As the synthesis method, in addition to solution polymerization, bulk polymerization, suspension polymerization, emulsion polymerization, or the like can also be employed. (a) The content of the binder resin is preferably in the range of 20 to 90% by mass, more preferably in the range of 3 to 7 % by mass, based on the weight of the negative photosensitive resin composition. (a) The content of the resin for the adhesive, the resist pattern formed by exposure and development has sufficient characteristics as a resist, for example, sufficient resistance to capping, surname, and various plating steps. In particular, it is preferably in the range of 20 to 90% by mass. In the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate according to the present invention, (a) the binder resin is contained in the entire negative photosensitive resin composition. It is in the range of 20 to 90% by mass, preferably in the range of % to 7% by mass. ° In the present invention, (b) the photopolymerizable unsaturated compound is preferably selected from the following formula ( At least one of the compound represented by I) and the compound represented by the following formula (Π) can be photopolymerized - an unsaturated compound: General formula (I): [Chemical 7] H2C = i -C0-(CzH40)n2~(C3He0)n3-(C2H40)n4-C-0*CH2 (I)
〇 II 136693.doc -23- 200947116 {式中,R8及R9獨立為Η或CH3,且n2、n3及n4分別獨立為 3〜20之整數}。 於以上述通式⑴所表示之化合物中,若η2、ns及&小於 3 ’則該化合物之沸點下降,抗蝕劑之臭味變得強烈而難 以使用。若〜h及η*超過2〇,則存在每單位重量之光活 性部位之濃度降低,故實用感光度下降的傾向。 作為以上述通式⑴所表示之化合物之具體例’例如可列 舉於加成有平均12莫耳之環氧丙烷之聚丙二醇的兩端分別 加成平均3莫耳之環氧乙烷的二醇之二曱基丙烯酸酯。 通式(II): [化8]〇 II 136693.doc -23- 200947116 {wherein, R8 and R9 are independently Η or CH3, and n2, n3 and n4 are each independently an integer of 3 to 20}. In the compound represented by the above formula (1), when η2, ns, and & are less than 3', the boiling point of the compound is lowered, and the odor of the resist becomes strong and difficult to use. When ~h and η* exceed 2 Å, the concentration of the light-active portion per unit weight decreases, and the practical sensitivity tends to decrease. Specific examples of the compound represented by the above formula (1) include, for example, a diol in which an average of 3 moles of ethylene oxide is added to both ends of a polypropylene glycol having an average of 12 moles of propylene oxide. Dimercapto acrylate. General formula (II): [Chemical 8]
(ID Ο -(Α-0)ηβ-(Β^)ίΐ,-| aCHj {式中’ Rl。及R"獨立為Η或CH3’ Α為Mr β為㈣, ―為㈣之整數’心為㈣之整數’一蜀立為 ㈣之整數’ gn8獨立為Q〜29之整數’重複單元⑽)_ :-㈣-之排列可為隨機亦可為嵌段,於為嵌段之情形 時,均可位於雙酚基側}。 =上述通式(Π)所表示之化合物中 超過3〇,貝"型感光性樹脂層⑻中之雙鍵濃度相對降 136693.doc -24· 200947116 低,故存在感光度下降之傾向。n5+n6較好的是4〜14,且 H7 + I18較好的是0〜14。 作為以上述通式(II)所表示之化合物之具體例,可列 舉:於雙酚A之兩端分別加成有平均2莫耳之環氧丙烷及平 均6莫耳之環氧乙烷的聚烷二醇之二甲基丙烯酸酯,或者 於雙酚A之兩端分別加成有平均5莫耳之環氧乙烷的聚乙二 醇之二甲基丙烯酸酯(新中村化學工業股份有限公司製造 之NK酯 BPE-500)。 作為(b)可進行光聚合之不飽和化合物,除上述以通式 (I)所表示之化合物以及以通式(II)所表示之可進行光聚合 之不飽和化合物以外,亦可使用以下述式(III)或式(IV)所 表示之化合物: 式(III): [化9] f?13 NHCO-(〇C3H6)m1-(〇c2H4)m3-〇C〇-C=CH2 |ΐ2 (ΠΙ) NHC〇-(〇C3H6)m?-(〇c2H4)m4-〇C〇-C=CH2 R14 {式中,R12為碳數4〜12之烷基、環烷基或芳基,R13及R14 獨立為Η或CH3,rr^、m2、m3及m4分別獨立為0〜15之整 數,重複單元-(〇C3H6)ml-(OC2H4)m3-以及-(OC3H6)m2-(OC2H4)m4-之排列可為隨機亦可為嵌段,而且於為嵌段之 情形時,均可位於丙烯醯基側}。 136693.doc -25- 200947116 對於以上述通式(m)所表示之化合物,就感光度之觀點 而言’ m 1、m2、m3及m4為15以下。 作為以上述通式(m)所表示之化合物之具體例,例如可 列舉:二異氰酸己二酯、甲苯二異氰酸酯、2,2,4_三甲基 一異亂酸己一 s旨等一異氰酸s旨化合物與一分子中且有經美 及(甲基)丙烯基之化合物(例如丙烯酸2_經基丙醋、募聚丙 二醇單甲基丙烯酸酯、寡聚乙二醇單甲基丙烯酸酯、寡聚 乙一醇丙二醇單曱基丙烯酸酯等)的胺基甲酸酯化合物 等。具體而言,可列舉:二異氰酸己二酯與寡聚丙二醇單 甲基丙稀酸酯(日本油脂股份有限公司製造,Blemmer PP1000)之反應物、二異氰酸己二酯與寡聚乙二醇單曱基 丙婦酸醋(日本油脂股份有限公司製造,Blenlrner PE_200) 之反應物、二異氰酸己二酯與募聚乙二醇丙二醇單曱基丙 稀酸醋(曰本油脂股份有限公司製造之Blemnler 70pep_ 350B)之反應物。 式(IV): [化 10](ID Ο -(Α-0)ηβ-(Β^)ίΐ,-| aCHj {wherein 'Rl. and R" is independent Η or CH3' M is Mr β is (4), ― is the integer of (4)' (4) The integer '一蜀立为 (4) integer 'gn8 is an integer of Q~29's repeating unit (10)) _ :-(4)- The arrangement can be random or block, in the case of block, Can be located on the bisphenol side}. = more than 3 化合物 in the compound represented by the above formula (Π), and the double bond concentration in the shell-type photosensitive resin layer (8) is relatively lower than 136693.doc -24·200947116, so the sensitivity tends to decrease. Preferably, n5+n6 is 4 to 14, and H7 + I18 is preferably 0 to 14. Specific examples of the compound represented by the above formula (II) include the addition of an average of 2 moles of propylene oxide and an average of 6 moles of ethylene oxide to both ends of bisphenol A. a dimethacrylate of alkanediol, or a polyethylene glycol dimethacrylate having an average of 5 moles of ethylene oxide added to both ends of bisphenol A (Xinzhongcun Chemical Industry Co., Ltd.) Manufactured NK ester BPE-500). (b) The photopolymerizable unsaturated compound may be used in addition to the compound represented by the formula (I) and the photopolymerizable unsaturated compound represented by the formula (II). A compound represented by formula (III) or formula (IV): Formula (III): [Chemical 9] f?13 NHCO-(〇C3H6)m1-(〇c2H4)m3-〇C〇-C=CH2 |ΐ2 ( ΠΙ) NHC〇-(〇C3H6)m?-(〇c2H4)m4-〇C〇-C=CH2 R14 where R12 is an alkyl group having 4 to 12 carbon atoms, a cycloalkyl group or an aryl group, R13 and R14 is independently Η or CH3, rr^, m2, m3 and m4 are each independently an integer from 0 to 15, and the repeating unit -(〇C3H6)ml-(OC2H4)m3- and -(OC3H6)m2-(OC2H4)m4- The arrangement may be random or block, and in the case of a block, it may be located on the propylene sulfhydryl side}. 136693.doc -25- 200947116 For the compound represented by the above formula (m), 'm 1 , m 2 , m 3 and m 4 are 15 or less from the viewpoint of sensitivity. Specific examples of the compound represented by the above formula (m) include hexamethylene diisocyanate, toluene diisocyanate, and 2,2,4-trimethyl-iso-succinic acid. An isocyanic acid compound and a compound having a mesogenic and (meth)acryl group in one molecule (for example, acrylic acid 2, propyl propylene glycol, propylene glycol monomethacrylate, oligoethylene glycol monomethyl methacrylate) A urethane compound or the like of a acrylate, oligoethylene glycol propylene glycol monodecyl acrylate or the like. Specific examples thereof include a reaction product of hexamethylene diisocyanate and oligopropylene glycol monomethyl acrylate (Blemmer PP1000, manufactured by Nippon Oil & Fat Co., Ltd.), hexamethylene diisocyanate and oligomerization. Reaction of ethylene glycol monodecyl acetoacetate (manufactured by Nippon Oil & Fat Co., Ltd., Blenlrner PE_200), hexamethylene diisocyanate and polyethylene glycol propylene glycol monodecyl acrylate vinegar The reactant of Blemnler 70pep_350B) manufactured by the company. Formula (IV): [Chem. 10]
HjC—C-C-O—(A* -0)rnj—(Β·HjC—C-C-O—(A* -0)rnj—(Β·
(IV) {式中’ R15為Η或CH3,R16為碳數1〜14之烧基,a'為 GH4 ’ B’為C^H6 ’爪3為1〜12之整數,叫為卜丨]之整數,叫 為0〜3之整數’重複單元-(A’-O)-以及-(B,_〇)_之排列可為 隨機亦可為嵌段,而且於為嵌段之情形時,均可位於苯基 側}。 136693.doc •26· 200947116 =以上述通式(IV)所表示之化合物中,就感光度之觀點 而S,m3及叫為14以下,較好的是12以下。 作為以通式(IV)所表示之化合物之具體例,例如可列 舉:將加成有平均2莫耳之環氧丙烧之聚丙二醇與加成有 +均7莫耳之環氧乙燒之聚乙二醇加成於壬盼上所得之化 合物的丙烯酸醋,即4_正壬基苯氧基七乙二醇二丙二醇丙 料酯。亦可列舉:將加成有平均8莫耳之環氧乙烷之聚 ❹ 乙二醇加成於壬酚上所得之化合物的丙烯酸酯,即4-正壬 基苯氧基八乙二醇丙烯酸酯(東亞合成股份有限公司製 造,M-114)。 作為(b)可進行光聚合之不飽和化合物,除以上述式 ⑴〜(IV)所表示之化合物以外,亦可同時併用下述可進行 光聚合之不飽和化合物i例如可列舉:丨,6-己二醇二(甲 基)丙烯酸酯、1,4-環己二醇二(甲基)丙烯酸酯、聚丙二醇 二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、2_二(對 ◎ 經基苯基)丙烷二(甲基)丙烯酸酯、丙三醇三(甲基)丙烯酸 醋、三經f基丙烷三(曱基)丙烯酸酯、聚氧丙基三經甲基 丙烷三(甲基)丙稀酸酯、聚氧乙基三羥甲基丙烷三丙烯酸 酯、季戊四醇三(曱基)丙烯酸酯、季戊四酵四(甲基)丙烯 酸醋、二季戊四醇五(甲基)丙烯酸酯、三經曱基丙烧三縮 水甘油醚三(甲基)丙烯酸酯、雙酚A二縮水甘油醚二(甲基) 丙烯酸酯以及鄰苯二曱酸β-羥基丙酯_β,_(丙烯醯氧基)丙 酯。 (b)可進行光聚合之不飽和化合物之含量相對於負型咸 136693.doc -27- 200947116 光性樹脂組合物整體較好的是3〜7〇質量%之範圍。就感光 度之觀點而言’其含量較好的是3質量%以上,就防止保 存時感光性樹脂層滲出之觀點而言,較好的是70質量%以 下。又’於本發明之提供負型感光性樹脂積層體以及負型 感光性樹脂積層體之使用方法的態樣中,上述含量為3〜7〇 質量%之範圍。上述含量更好的是1〇〜6〇質量%,進而更好 的是15〜55質量%。 於負型感光性樹脂組合物含有選自由以通式⑴所表示之 化合物、以及以通式(Π)所表示之化合物所組成之群中的 至少1種可進行光聚合之不飽和化合物之情形時,該不飽 和化合物之含量相對於負型感光性樹脂組合物整體較好的 是3〜60質量%之範圍,更好的是3〜45質量%之範圍。就密 接性之觀點而言,較好的是3質量%以上,就邊緣熔融之 觀點而言,較好的是60質量%以下。 於負型感光性樹脂組合物含有以通式所表示之化合 物或以通式(IV)所表示之化合物之情形時,各不飽和化合 物之含量相對於負型感光性樹脂組合物整體較好的是3〜6〇 質量%之範圍’更好的是3〜45質量%之範圍。就密接性之 觀點而言’較好的是3質量%以上’就邊緣熔融之觀點而 言,較好的是60質量%以下。 就高解像度之觀點而言,負型感光性樹脂組合物較好的 是包含2,4,5-三芳基咪唑二聚物作為(c)光聚合起始劑。作 為該三咪唑二聚物,特別好的是選自由以下述通式(卩)所 表示之化合物、以及以下述通式(VI)所表示之化合物所組 136693.doc -28- 200947116 成之群中的至少1種2,4,5-三芳基咪唑二聚物: 通式(V): [化 11](IV) {wherein R15 is Η or CH3, R16 is a burning group of carbon number 1~14, a' is GH4 'B' is C^H6 'claw 3 is an integer of 1~12, called divination] The integer, called the integer of 0~3, the repeating unit-(A'-O)- and -(B,_〇)_ can be arranged as random or block, and in the case of a block, Can be located on the phenyl side}. 136693.doc •26·200947116 = Among the compounds represented by the above formula (IV), S, m3 and 14 are preferably from 12 or less, and preferably 12 or less, from the viewpoint of sensitivity. Specific examples of the compound represented by the formula (IV) include, for example, a polypropylene glycol having an average of 2 moles of propylene oxide and an epoxy epoxide having an addition of 7 moles. Polyethylene glycol is added to the acrylic acid vinegar of the compound obtained, that is, 4-n-nonylphenoxy heptaethylene glycol dipropylene glycol propyl ester. Further, an acrylate which is obtained by adding a polyethylene glycol having an average of 8 moles of ethylene oxide to the indophenol, that is, 4-n-decylphenoxy octaethylene glycol acrylic acid, may be mentioned. Ester (manufactured by Toagosei Co., Ltd., M-114). (b) The unsaturated compound which can be photopolymerized, in addition to the compound represented by the above formula (1) to (IV), may be used together with the following photopolymerizable unsaturated compound i, for example, 丨, 6 - hexanediol di(meth)acrylate, 1,4-cyclohexanediol di(meth)acrylate, polypropylene glycol di(meth)acrylate, polyethylene glycol di(meth)acrylate, 2_二(对◎Phenylphenyl)propane di(meth)acrylate, glycerol tris(meth)acrylic acid vinegar, tri-f-propane tris(decyl)acrylate, polyoxypropyl tris Methylpropane tri(methyl) acrylate, polyoxyethyl trimethylolpropane triacrylate, pentaerythritol tris(decyl) acrylate, pentaerythritol tetrakis(meth)acrylate vinegar, dipentaerythritol (Meth) acrylate, tri-propyl mercapto-triglycidyl ether tri(meth) acrylate, bisphenol A diglycidyl ether di(meth) acrylate, and β-hydroxypropyl phthalate _β, _(propylene methoxy) propyl ester. (b) The content of the unsaturated compound which can be photopolymerized is relatively in the range of 3 to 7 % by mass based on the total amount of the photosensitive resin composition of the photoreceptor composition 136693.doc -27-200947116. In view of the sensitivity, the content is preferably 3% by mass or more, and from the viewpoint of preventing bleeding of the photosensitive resin layer during storage, it is preferably 70% by mass or less. In the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate according to the present invention, the content is in the range of 3 to 7 % by mass. The above content is more preferably from 1 to 6 % by mass, still more preferably from 15 to 55% by mass. The negative photosensitive resin composition contains at least one photopolymerizable unsaturated compound selected from the group consisting of the compound represented by the formula (1) and the compound represented by the formula (Π). In the case of the negative photosensitive resin composition, the content of the unsaturated compound is preferably in the range of from 3 to 60% by mass, more preferably in the range of from 3 to 45% by mass. From the viewpoint of the adhesion, it is preferably 3% by mass or more, and from the viewpoint of melting the edge, it is preferably 60% by mass or less. When the negative photosensitive resin composition contains a compound represented by the formula or a compound represented by the formula (IV), the content of each unsaturated compound is preferably higher than that of the negative photosensitive resin composition as a whole. It is a range of 3 to 6 〇 mass% 'better is a range of 3 to 45 mass%. From the viewpoint of the adhesion, it is preferable that it is 3% by mass or more. From the viewpoint of melting the edge, it is preferably 60% by mass or less. From the viewpoint of high resolution, the negative photosensitive resin composition preferably contains a 2,4,5-triarylimidazole dimer as (c) a photopolymerization initiator. The triimidazole dimer is particularly preferably selected from the group consisting of a compound represented by the following formula (卩) and a compound represented by the following formula (VI): group 136693.doc -28- 200947116 At least one 2,4,5-triarylimidazole dimer in the formula: (V):
(V) 之任—者,且p、q及r分別獨立為^之整數}; 通式(VI): 〇 [化 12](V) is the one--, and p, q, and r are each an integer of ^;; General formula (VI): 〇 [Chemical 12]
之任—者,且p、分別獨立為卜5之整數}。 為2,4,5-二芳基米。坐〜聚物,例如可列舉κ鄰氯苯 :)二4,5-二苯基咪唑二聚物、2_(鄰氯苯基)_4,5_雙(間曱氧 基本基)咪唾二聚㉜、2·(對甲氧基苯幻妙二苯基㈣二 136693.doc -29. 200947116 聚物等’特別好的是2-(鄰氣苯基)-4,5-二苯基咪唑二聚 物。 又’就進一步提高抗蝕劑圖案之密接性及解像性之觀點 而s ’負型感光性樹脂組合物含有作為光聚合起始劑 之選自由二苯曱酮及二苯甲酮衍生物所組成之群中之至少 1種化合物亦較好。 進而,亦可併用以上述通式(V)或(VI)所表示之24,5_三 芳基咪唑二聚物、與選自由二苯甲酮及二苯曱酮衍生物所 組成之群中之至少1種化合物,作為沁)光聚合起始劑。 作為二苯曱酮衍生物,就曝光感光度之觀點而言,特別 好的是對胺基苯基酮。作為對胺基苯基酮,例如可列舉: 對胺基二苯甲酮、對丁基胺基二笨甲酮、對二甲基胺基苯 乙酮、對一甲基胺基二苯甲酮、p,p,·雙(乙基胺基)二苯曱 酮P’p-雙(一甲基胺基)二笨曱酮[米其勒酮]、ρ,ρΙ-雙(二 乙基胺基)二苯甲酮、p,p,·雙(二丁基胺基)二苯甲酮。 又,亦可併用上述化合物以外之其他光聚合起始劑作為 ⑷光聚合起始劑。此處’作為其他光聚合起始劑,可為能 夠藉由各種活性光線、例如紫外線等而活化,從而使聚合 開始之公知化合物。 作為其他光聚合起始劑,例如可列舉:2_乙基蒽職、2 第三丁基類’二笨甲酮等之芳香族賴,安息 香安心香甲醚·^息香乙鍵等安息香喊類,9_苯基。丫。定 等。丫咬化合物,苯偶酿二甲基縮酮、苯偶醯二乙基縮酮、 °比°坐,化合物。又,例如亦可列氧硫如星、2,4_二 乙基冬氧妙星、2-氣氣硫如星等9-氧硫如星類與二曱 136693.doc -30 - 200947116 基胺基苯甲酸烷基酯化合物等三級胺化合物的組合。 作為其他光聚合起始劑,亦可列舉:1_苯基_丨,2_丙二 酮-2-(0-苯甲醯基)肟、卜苯基],2_丙二酮_2_(〇_乙氡基羰 基)肟等肟酯類。又,亦可使用芳基_α_胺基酸化合物, 特別好的是Ν-苯基甘胺酸。Any of them - and p, respectively, are independent of the integer of 5}. It is 2,4,5-diaryl rice. Sitting on the polymer, for example, κ o-chlorobenzene:) bis 4,5-diphenylimidazolium dimer, 2-(o-chlorophenyl)-4,5-bis(metamethoxyoxy)methine dimerization 32, 2 · (p-methoxybenzene phantom diphenyl (tetra) two 136693.doc -29. 200947116 polymer etc. ' Particularly good is 2- (o-phenyl)-4,5-diphenylimidazole Further, the 'negative photosensitive resin composition contains a photopolymerization initiator selected from the group consisting of dibenzophenone and benzophenone, from the viewpoint of further improving the adhesion and resolution of the resist pattern. At least one compound selected from the group consisting of derivatives is also preferred. Further, it may be used in combination with the 24,5-triarylimidazole dimer represented by the above formula (V) or (VI), and selected from the group consisting of At least one compound selected from the group consisting of benzophenone and a benzophenone derivative is used as a photopolymerization initiator. As the benzophenone derivative, an amino phenyl ketone is particularly preferable from the viewpoint of exposure sensitivity. As the p-aminophenyl ketone, for example, p-aminobenzophenone, p-butylaminodibenzophenone, p-dimethylaminoacetophenone, p-monomethylaminobenzophenone may be mentioned. , p, p, · bis(ethylamino)benzophenone P'p-bis(monomethylamino)dipodone [micilene], ρ,ρΙ-bis(diethylamine) Benzo) benzophenone, p, p, bis (dibutylamino) benzophenone. Further, as the photopolymerization initiator, (4) a photopolymerization initiator other than the above compounds may be used in combination. Here, as another photopolymerization initiator, a known compound which can be activated by various active light rays such as ultraviolet rays to start polymerization can be used. Examples of the other photopolymerization initiators include aromatic lysines such as 2_ethyl hydrazine and 2 butyl butyl dioxin, benzoin and fragrant methyl ether, and benzoin. Class, 9_phenyl. Hey. Wait. Bite compound, benzoin dimethyl ketal, benzoin diethyl ketal, ° ° ° compound. Further, for example, an oxygen such as a star, a 2,4-diethyloxanol, a 2-gas sulfur such as a star, a sulfur-oxygen such as a star and a diterpenoid 136693.doc -30 - 200947116-amine can also be listed. A combination of a tertiary amine compound such as an alkyl benzoate compound. As other photopolymerization initiators, 1-phenyl-indole, 2-propanedione-2-(0-benzylidene) fluorene, phenylphenyl], 2-propanedione-2-(肟_Ethyl carbonyl) hydrazine and other oxime esters. Further, an aryl_α-amino acid compound can also be used, and particularly preferably Ν-phenylglycine.
光聚合起始劑(c)之含量相對於負型感光性樹脂組合物整 體較好的是0.1質量%〜20質量%,就曝光感光度之觀點而 言,其含量較好的是⑴丨質量%以上,就解像度之觀點而 言,較好的是20質量%以下。又,於本發明提供之負型感 光性樹脂積層體以及負型感光性樹脂積層體之使用方法的 態樣中,上述含量為⑴丨質量%〜2〇質量%。 於含有2,4,5·三芳基咪嗤二聚物作為⑷光聚合起始劑之 情形時,該2,4,5_三芳基咪嗤二聚物之含量相對於負型感 光性樹脂組合物整體較好的是〇〜1Qf量%之範圍,更好 的是0.5-4.5質量%之範圍。就感光度之觀點而f,較好的 是(^質量%以上,就解像度之觀點而言,較好的是1〇質量 %以下。 於含有選自由二苯甲酮及二苯甲網衍生物所組成之群中 之至少1種化合物作為⑷光聚合起始劑之情形時,該化合 物之含量相對於負型感光性樹脂組合物整趙係以使波長 365請下之光線透過率為25%以上、5〇%以下之方式對 樹脂層(β)之厚度而決定,通常較好的是 在0.01〜1.0貝量%之範圍内, 之範圍内。 更好的-在〇·〇5〜0·15質量% 136693.doc -31 - 200947116 負型感光性樹脂組合物亦可含有染料、顏料等著色物 質。作為著色物質,例如可列舉:品紅、酞菁綠、金胺 驗、Calkoxide Green S、parama(jienta、結晶紫、甲基 橙、尼羅藍2B、維多利亞藍、孔雀綠(保土谷化學股份有 限公司製造之AIZEN(註冊商標)MALACHITE GREEN)、鹼 性藍20、鑽石綠(保土谷化學股份有限公旬製造之 AIZEN(註冊商標)DIAMOND GREEN GH)等。 著色物質之含量相對於負型感光性樹脂組合物整體較好 的是0.005〜10質量%之範圍,更好的是ομμ質量%之範 圍。就抗蝕劑視認性之觀點而言,上述含量較好的是 0.005質量%以上,就感光度之觀點而言,較好的是質量 %以下。 亦可使負型感光性樹脂組合物中含有藉由光照射而發色 之發色系染料。作為發色系染料,例如可列舉隱色毕料 (leuco dye)以及螢烧染料(fluorane dye)。作為隱色染料, 例如可列舉:三(4-二曱胺基-2-曱基苯基)曱烷_[隱色結晶 紫]、三(4-二甲胺基-2-甲基苯基)曱烷·[隱色孔雀綠]等。 隱色染料較好的是與函化化合物組合使用。作為_化化 合物,可列舉:溴戊烷、溴異戊烷、i,2_二溴_2_甲基丙 烷、1,2-二溴乙烷、二苯溴代甲烷、二溴甲苯、二漠甲 烷、三溴甲基苯基砜、四溴化碳、磷酸三(2,3_二溴丙基) 酯、三氣乙醯胺、碘戊烷、碘異丁烷、1,1,^三氣_2,2•雙 (對氣苯基)乙烷、六氣乙烷、函化三畊化合物等。 作為齒代三畊化合物’可列舉:2,4,6-三(三氯曱基)_均 136693.doc -32· 200947116 三H(4-甲氧基苯基)·4,6_雙(三氯甲基均三吨。 尤其有用的是三漠甲基苯基艰與隱色染料之組合、或三 17井化合物與隱色染料之組合。 隱色染料之含量相對於負型感光性樹脂組合物整體較好 的是在0侧〜_量%之範_,更㈣ ❹The content of the photopolymerization initiator (c) is preferably from 0.1% by mass to 20% by mass based on the whole of the negative photosensitive resin composition. From the viewpoint of exposure sensitivity, the content is preferably (1) 丨 mass. From the viewpoint of the resolution, it is preferably 20% by mass or more. Further, in the aspect of the method of using the negative photosensitive resin laminate and the negative photosensitive resin laminate provided by the present invention, the content is (1) 丨 mass% to 2 〇 mass%. In the case where the 2,4,5-triarylmethicone dimer is used as the (4) photopolymerization initiator, the content of the 2,4,5-triaryldiene dimer is relative to the negative photosensitive resin combination. The whole material is preferably in the range of 〇~1Qf% by weight, more preferably in the range of 0.5-4.5% by mass. From the viewpoint of sensitivity, f is preferably (% by mass or more, and from the viewpoint of resolution, preferably 1% by mass or less. Containing a derivative selected from the group consisting of benzophenone and benzophenone) When at least one compound of the group is used as the (4) photopolymerization initiator, the content of the compound is adjusted relative to the negative photosensitive resin composition so that the light transmittance of the wavelength 365 is 25%. The above or less than 5% by weight is determined depending on the thickness of the resin layer (β), and is usually preferably in the range of 0.01 to 1.0% by volume. More preferably - in 〇·〇5~0 15% by mass 136693.doc -31 - 200947116 The negative photosensitive resin composition may contain a coloring matter such as a dye or a pigment. Examples of the coloring matter include magenta, phthalocyanine green, gold amine test, and Calgotoxide Green S. , parama (jienta, crystal violet, methyl orange, Nile Blue 2B, Victoria Blue, Malachite Green (AIZEN (registered trademark) MALACHITE GREEN manufactured by Hodogaya Chemical Co., Ltd.), Basic Blue 20, Diamond Green (Budong Valley) AIZEN (made by the Chemical Co., Ltd.) The content of the coloring matter is preferably in the range of 0.005 to 10% by mass, more preferably in the range of ομμ mass%, based on the entire negative photosensitive resin composition. The content of the above-mentioned content is preferably 0.005% by mass or more, and is preferably 5% by mass or less from the viewpoint of sensitivity. The negative photosensitive resin composition may be contained by light irradiation. A chromogenic dye is used as the chromogenic dye, for example, a leuco dye and a fluorane dye. Examples of the leuco dye include tris(4-diamine). Phenyl-2-mercaptophenyl)decane_[leuco crystal violet], tris(4-dimethylamino-2-methylphenyl)decane, [hidden malachite green], etc. Preferably, it is used in combination with a functional compound. As the compound, bromopentane, bromoisopentane, i, 2, dibromo-2-methylpropane, 1,2-dibromoethane, and Benzyl bromide, dibromotoluene, methane, tribromomethylphenyl sulfone, carbon tetrabromide, tris(2,3-dibromopropyl) phosphate , trimethylacetamide, iodopentane, iodine isobutane, 1,1, ^ three gas 2, 2 • bis (p-phenyl) ethane, hexa-ethane, functionalized three-till compounds. As a three-till compound for toothing, it can be exemplified by 2,4,6-tris(trichloroindenyl)_all 136693.doc -32· 200947116 tris H(4-methoxyphenyl)·4,6_double ( The trichloromethyl group is three tons. Particularly useful is the combination of Sanmomethylphenyl and leuco dyes, or the combination of the compound of the San17 well and the leuco dye. The content of the leuco dye is preferably in the range of 0 to _% by weight relative to the entire negative photosensitive resin composition, and more (4) ❹
之犯圍内。就著色性之觀點而言,上述含量較好的是 ㈣5質量%以上,就曝光部與未曝光部之對比度之觀點以 及維持保存穩定性之觀點而言,較好的是_量%以下。 函化化口物之3里相對於負型感光性樹脂組合物整體較 好的是在0.005〜10質量%之範圍内,更好的是在心…^質 量%之範圍内。就著色性之觀點而言,上述含量較好的是 0.005質量%以上,就曝光部與未曝光部之對比度之觀點以 及維持保存穩定性之觀點而言,較好的是10質量%以下。 為提商負型感光性樹脂組合物之熱穩定性及/或保存穩 定性,使負型感光性樹脂組合物中含有自由基聚合抑制劑 亦較好。作為此種自由基聚合抑制劑,例如可列舉:對甲 氧基苯紛、對苯二酚、鄰笨三酚、萘胺、第三丁基鄰苯二 酚、氣化銅、2,6-二-第三丁基-對甲酚、2,2,_亞曱基雙(4_ 乙基-6-第三丁基苯酚)、2,2,-亞曱基雙(4-甲基第三丁基 苯盼)、Ν-亞硝基二苯胺等’作為具體之較佳例,可列舉 四[3-(3,5-二-第三丁基-4-經基笨基)丙酸]季戊四醇醋等。 自由基聚合抑制劑之含量相對於負型感光性樹脂組合物 整體較好的是在〇·〇1〜3質量%之範圍内,更好的是在 0.02〜0.2質量%之範圍内。就解像度之觀點而言,上述含 136693.doc -33- 200947116 量較好的是0.01質量%以上,就感光度之觀點而言,較好 的是3質量%以下。 又本發明之負型感光性樹脂組合物中亦可視需要含有 增塑劑。作為增塑劑,例如可列舉:鄰苯二甲酸二乙酯等 鄰苯二曱酸酯類、對甲苯磺醯胺、聚丙二醇、聚乙二醇單 烧基醚等。 增塑劑之含量相對於負型感光性樹脂組合物整體較好的 是在5〜50質量%之範圍内,更好的是在5〜3〇質量%之範圍 内。就對抗蝕劑硬化物賦予柔軟性之觀點而言,上述含量 較好的是5質量%以上,就抑制硬化不足及冷流之觀點而 言,較好的是50質量%以下。 作為本發明中之基板(c),可列舉:於玻璃環氧基板上 貼合銅箔所得之銅箔積層板,銅、銅合金、鐵系合金等金 屬板,玻璃肋(glass rib),矽晶圓以及具有導體層之膜狀 基材等。 具有導體層之膜狀基材係於膜狀之絕緣樹脂層上具有 銅、金、銀、鋁等導體層者,例如可列舉:於聚醯亞胺 膜、聚酯膜、BT樹脂(雙馬來醯亞胺-三畊樹脂)等絕緣樹脂 層上敷有銅箔之可撓性基材或者捲帶式自動接合(TapeThe crime is inside. In view of the coloring property, the content is preferably 5% by mass or more, and from the viewpoint of the contrast between the exposed portion and the unexposed portion, and from the viewpoint of maintaining storage stability, it is preferably _% by weight or less. The third of the functionalized resin is preferably in the range of 0.005 to 10% by mass, more preferably in the range of % by mass, based on the entire negative photosensitive resin composition. In view of the coloring property, the content is preferably 0.005% by mass or more, and is preferably 10% by mass or less from the viewpoint of the contrast between the exposed portion and the unexposed portion and the storage stability. In order to improve the thermal stability and/or storage stability of the negative photosensitive resin composition, it is also preferred to include a radical polymerization inhibitor in the negative photosensitive resin composition. Examples of such a radical polymerization inhibitor include p-methoxybenzene, hydroquinone, o-trisphenol, naphthylamine, tert-butyl catechol, vaporized copper, 2,6- Di-t-butyl-p-cresol, 2,2,-indenylene bis(4-ethyl-6-tert-butylphenol), 2,2,-arylene di(4-methyl third As a specific preferred example, tetrakis[3-(3,5-di-t-butyl-4-pyridyl)propionic acid is exemplified as the butyl benzoate. Pentaerythritol vinegar and the like. The content of the radical polymerization inhibitor is preferably in the range of 1 to 3 mass%, more preferably 0.02 to 0.2 mass%, based on the total mass of the negative photosensitive resin composition. In view of the resolution, the above-mentioned content of 136693.doc -33 - 200947116 is preferably 0.01% by mass or more, and from the viewpoint of sensitivity, it is preferably 3% by mass or less. Further, the negative photosensitive resin composition of the present invention may optionally contain a plasticizer. Examples of the plasticizer include phthalic acid esters such as diethyl phthalate, p-toluenesulfonamide, polypropylene glycol, and polyethylene glycol monoalkyl ether. The content of the plasticizer is preferably in the range of 5 to 50% by mass, more preferably 5 to 3% by mass based on the whole of the negative photosensitive resin composition. In view of imparting flexibility to the cured material of the resist, the content is preferably 5% by mass or more, and from the viewpoint of suppressing insufficient hardening and cold flow, it is preferably 50% by mass or less. The substrate (c) in the present invention includes a copper foil laminated plate obtained by laminating a copper foil on a glass epoxy substrate, a metal plate such as copper, a copper alloy or an iron-based alloy, and a glass rib. A wafer, a film substrate having a conductor layer, and the like. The film-form substrate having a conductor layer has a conductor layer such as copper, gold, silver or aluminum on the film-shaped insulating resin layer, and examples thereof include a polyimide film, a polyester film, and a BT resin (double horse). Flexible substrate coated with copper foil or tape-type automatic bonding on the insulating resin layer such as yttrium imine-three-till resin (Tape)
Automated Bonding,TAB)膠帶。 作為將上述負型感光性樹脂層(B)形成於基板(c)上之方 法,可列舉如下方法:預先將負型感光性樹脂層(B)形成 於支持體(A)(例如支持膜)上,然後以例如於負型感光性樹 脂層(B)之與支持體(A)相反之側的表面上積層基板(c)之方 136693.doc -34- 200947116 式,即以使基板(c)夾持負型感光性樹脂層(B)而與支持體 (A)相對向之方式’將負型感光性樹脂層(B)加熱壓接於基 板(C)(例如金屬之印刷電路板用基板)上。 作為將負型感光性樹脂層(B)形成於支持體(A)上之方 法,可列舉上述將負型感光性樹脂組合物塗佈於支持體 (A)上之方法。此處所使用之支持體(A)較好的是可透過活 性光之透明者。作為可透過活性光之支持體,可列舉:聚 對笨一甲酸乙一酯膜、聚乙豨醇膜、聚氣乙烯膜、氣乙烯 共聚物膜、聚偏二氯乙烯膜、偏二氣乙烯共聚物膜、聚曱 基丙烯酸甲酯共聚物膜、聚苯乙烯膜、聚丙烯腈膜、苯乙 烯共聚物膜、聚醯胺膜、纖維素衍生物臈等。該等膜視需 要可使用經延伸者。 支持體(A)之霧度較好的是5.〇以下。關於支持體(A)之厚 度’較薄者於圖像形成性及經濟性方面較為有利,但為維 持強度,厚度通常為10〜30 μιη 〇 〇 視需要於負型感光性樹脂層(Β)之與支持體(Α)側相反之 側之表面上積層保護層(襯墊)。保護層與負型感光性樹脂 層(Β)之密接力較之支持體(Α)與負型感光性樹脂層(Β)之密 . 接力足夠小,因此保護層可容易地剝離,此係作為保護層 -之重要特(·生。作為此種保護層,例如可列舉.聚乙稀膜、聚 丙烯膜等。 於負型感光性樹脂積層體具有保護層之情形時,係在將 負型感光性樹脂層(Β)形成於基板(c)上之前,於該負型感 光性樹脂層(B)之表面預先形成保護層’將該保護層剝離 136693.doc •35- 200947116 之後,藉由加熱壓接將負型感光性樹脂層(B)積層於基板 (c)表面上。此時之加熱溫度通常為4〇〜16〇。〇。 負型感光性樹脂層(B)之厚度在不同用途中並不相同, 用於製作印刷電路板(印刷配線板)時通常為5〜1〇〇 ,較 好的是5〜50 μηι。於解像力較高、抗蝕劑尺寸再現性改善 效果較為顯著之方面,膜厚5〜25 μιη之範圍更好。 負型感光性樹脂積層體可藉由i線單色光、紫外光等活 性光線’較好的是藉由i線單色光而曝光。於該曝光步驟 中,負型感光性樹脂層(B)之曝光部硬化。作為曝光步驟 所使用之光源,可列舉:高壓水銀燈、超高壓水銀燈、紫 外線螢光燈、碳弧燈、氙氣燈、雷射等。該等光源可直接 使用,亦可使用帶通濾波器等形成丨線單色。若將曝光波 長形成為i線單色,則解像度提高,因此較好的是使用丨線 單色光。於積層體形成步驟與曝光步驟之間,自負型感光 性樹脂層(B)上剝離支持體(A) ’然後於曝光步驟中對殘存 之負型感光性樹脂層(B)進行曝光亦較好。於此情形時, 抗蝕劑剖面形狀形成為矩形,即形成為幾乎無抗蝕劑頂部 之粗大以及抗蝕劑底部之細窄之形狀,故而特別好。 通常,作為曝光所採用之曝光方式,可列舉投影型曝光 方式(projection exposure方式)、密接曝光方式、直接描繪 方式等,本發明中採用投影型曝光方式,其使用使光罩之 像投影之光、經由透鏡對負型感光性樹脂層進行曝光。再 者,於本發明之典型態樣中,來自光源之光係依次通過光 罩及透鏡後到達負型感光性樹脂層上,但來自光源之光亦 136693.doc -36- 200947116 可先通過透鏡然後通過光罩。於本發明中,採用投影型曝 光方式且使波長365 nm下之光線透過率為25%以上、50% 以下,藉此抗蝕劑尺寸再現性得到顯著改善。又,於投影 型曝光方式中,使波長365 nm下之負型感光性樹脂層(B) 之光線透過率為25%以上、50%以下且預先將支持體(A)剝 離之後再曝光的態樣可獲得下述優點:抗蝕劑形狀形成為 矩形’即形成為幾乎無抗蝕劑頂部之粗大以及抗蝕劑底部 之細窄之形狀。 ❹ 繼而’於在負型感光性樹脂層(B)上存在支持體(A)之情 形時’視需要除去支持體(A),然後顯影去除負型感光性 樹脂層(B)之未曝光部,藉此形成包含負型感光性樹脂層 (B)之硬化部的抗蝕劑硬化物。作為顯影方法,例如可列 舉使用鹼性水溶液將負型感光性樹脂層(B)之未曝光部去 除之方法。作為鹼性水溶液,可使用碳酸鈉、碳酸鉀等之 水/备液。該等鹼性水溶液可根據負型感光性樹脂層(B)之 e 特性來選擇,通常使用ο」〜3質量%之碳酸鈉水溶液。如 此’可獲得本發明之抗姓劑硬化物。 <印刷配線板之製造方法> * 以下,進一步對上述使用負型感光性樹脂積層體之印刷 配線板之製造方法加以說明。本發明提供一種印刷配線板 之製造方法,其包含以下步驟:對具有藉由上述製造方法 而獲得之抗蝕劑硬化物所形成的抗蝕劑圖案之基板(c), 進行蝕刻或者電鍍;自基板(c)上去除抗蝕劑硬化物。於 本發明之印刷配線板之製造方法中,t其是使用金屬板來 136693.doc •37· 200947116 乍為基板(c) ’於藉由上述抗钱劑硬化物之製造方法中之 顯影步驟而露出之金屬面上,利用既知之㈣法或電鑛法 中之任一種方法而形成金屬之圖像圖案。然後,使用較之 通常用於顯影之鹼性水溶液鹼性更強之水溶液,剝離去除 硬化之抗蝕劑圖案。對剝離用之鹼性水溶液並無特別限 制,通常使用1〜5質量%之氫氧化鈉或氫氧化鉀之水溶 液。 ’ 藉由使用本發明來形成圖像圖案,除上述印刷配線板 (印刷電路板)以外,亦可形成半導體封裝用基板、引線框 架、電漿顯示器之阻隔壁(rib)等。如圖i所示,藉由本發 明而獲得之抗蝕劑線之剖面顯示為接近於矩形(長方形)之 良好形狀。即’如圖2所示的先前技術之製造方法中產生 的抗蝕劑頂部之粗大以及抗蝕劑底部之細窄之問題顯著減 輕,又,如圖4所示的預先自負型感光性樹脂層上剝離支 持體後進行曝光之情形時抗蝕劑剖面形狀形成為「線轴 狀」、抗姓劑殘足較大之問題顯著減輕。因此,本發明可 特別好地應用於半導體封裝基板製造。 於使用本發明來製造引線框架之情形時,使用銅、銅合 金、鐵系合金等金屬板作為上述基板(C),於上述抗姓劑 硬化物之製造方法中之曝光步驟及顯影步驟之後,對所露 出之基板面進行蝕刻。最後將抗蝕劑硬化物剝離,獲得所 期望之引線框架。又,於使用本發明來製造電漿顯示面板 之阻隔壁之情形時,可使用玻璃肋作為基板(C),於上述 抗蝕劑硬化物之製造方法中之曝光步驟以及顯影步驟之 136693.doc -38- 200947116 面進行加工,剝離抗蝕劑 後,藉由嘴砂法 去對所露出之基板 w凸圖案之基板 圖案而獲得具有 [實施例] 以下,藉由實施例更具體地說明本發明之實施形態,但 是本發明並不限定於實施例。 <負型感光性樹脂組合物> 將實施例及比較例中所使用之負型感光性樹脂組合物之 組成示於下述表1及2中。 ❹ ❹ •39· 136693.doc 7 94 o 20 6 ΓΟ •ζ ο ο 。/061 ς luw-1uni-1 03 ·0 •ζ ο ο o/olz •ς VZI4^- 03 0ΖAutomated Bonding, TAB) tape. As a method of forming the negative photosensitive resin layer (B) on the substrate (c), a method of forming the negative photosensitive resin layer (B) on the support (A) (for example, a support film) is exemplified. Then, for example, a surface of the substrate (c) is laminated on the surface opposite to the side of the support (A) of the negative photosensitive resin layer (B), 136693.doc - 34 - 200947116, that is, to make the substrate (c) The negative photosensitive resin layer (B) is sandwiched between the support and the support (A). The negative photosensitive resin layer (B) is heat-pressure-bonded to the substrate (C) (for example, a metal printed circuit board) On the substrate). The method of forming the negative photosensitive resin layer (B) on the support (A) is a method of applying the negative photosensitive resin composition to the support (A). The support (A) used herein is preferably one which is transparent to active light. Examples of the permeable transparent light support include a polyethylene terephthalate film, a polyethylene glycol film, a polyethylene gas film, a gas ethylene copolymer film, a polyvinylidene chloride film, and a polyethylene gas copolymerization. A film, a polymethyl methacrylate copolymer film, a polystyrene film, a polyacrylonitrile film, a styrene copolymer film, a polyamide film, a cellulose derivative, or the like. These films may be used as extenders as needed. The haze of the support (A) is preferably 5. 〇 or less. The thickness of the support (A) is relatively thin in terms of image formation and economy, but in order to maintain the strength, the thickness is usually 10 to 30 μm, which is necessary for the negative photosensitive resin layer (Β). A protective layer (pad) is laminated on the surface opposite to the side of the support (Α) side. The adhesion between the protective layer and the negative photosensitive resin layer is higher than that of the support (Α) and the negative photosensitive resin layer (Β). The bonding force is sufficiently small, so the protective layer can be easily peeled off. The protective layer is important (for example, a polyethylene film, a polypropylene film, etc.). When the negative photosensitive resin laminate has a protective layer, it is a negative type. Before the photosensitive resin layer (Β) is formed on the substrate (c), a protective layer is formed on the surface of the negative photosensitive resin layer (B) in advance, and the protective layer is peeled off by 136693.doc • 35-200947116, by The negative photosensitive resin layer (B) is laminated on the surface of the substrate (c) by heating and pressing. The heating temperature at this time is usually 4 〇 16 〇 〇. The thickness of the negative photosensitive resin layer (B) is different. It is not the same in use. It is usually 5~1〇〇, preferably 5~50 μηι when used to make printed circuit boards (printed wiring boards). The resolution is higher and the resist size reproducibility is more remarkable. On the other hand, the film thickness is preferably in the range of 5 to 25 μm. The resin laminate may be exposed by i-line monochromatic light by i-line monochromatic light, active light such as ultraviolet light, etc. In the exposure step, the exposure portion of the negative photosensitive resin layer (B) is exposed. Hardening. As the light source used in the exposure step, high pressure mercury lamp, ultra high pressure mercury lamp, ultraviolet fluorescent lamp, carbon arc lamp, xenon lamp, laser, etc. can be used. These light sources can be used directly, and a band pass filter can also be used. If the exposure wavelength is formed as an i-line monochromatic, the resolution is improved, so it is preferable to use a sinusoidal monochromatic light. Between the laminate forming step and the exposure step, the self-negative photosensitive resin The support (A) is peeled off on the layer (B). Then, it is also preferable to expose the remaining negative photosensitive resin layer (B) in the exposure step. In this case, the resist cross-sectional shape is formed into a rectangular shape, that is, It is particularly preferable because it is formed to have almost no thickness of the top of the resist and a narrow shape of the bottom of the resist. Generally, as an exposure method used for exposure, a projection exposure method (projection exposure method) can be cited. In the present invention, a projection type exposure method is employed in which a light-projecting light is used to expose a negative photosensitive resin layer via a lens. Further, in the typical state of the present invention In the present invention, the light from the light source passes through the reticle and the lens to reach the negative photosensitive resin layer, but the light from the light source is also 136693.doc-36-200947116, which can pass through the lens and then pass through the reticle. The projection type exposure method is used, and the light transmittance at a wavelength of 365 nm is 25% or more and 50% or less, whereby the resist size reproducibility is remarkably improved. Further, in the projection type exposure method, the wavelength is 365 nm. The light transmittance of the negative photosensitive resin layer (B) is 25% or more and 50% or less, and the support (A) is peeled off before exposure, and the following advantages are obtained: the resist shape is formed as The rectangle 'is formed almost without the coarseness of the top of the resist and the narrow shape of the bottom of the resist.继 In the case where the support (A) is present on the negative photosensitive resin layer (B), the support (A) is removed as needed, and then the unexposed portion of the negative photosensitive resin layer (B) is developed and removed. Thereby, a resist cured product containing the cured portion of the negative photosensitive resin layer (B) is formed. As the developing method, for example, a method of removing the unexposed portion of the negative photosensitive resin layer (B) using an aqueous alkaline solution can be mentioned. As the alkaline aqueous solution, water/preparation liquid such as sodium carbonate or potassium carbonate can be used. These alkaline aqueous solutions can be selected according to the e characteristics of the negative photosensitive resin layer (B), and usually a sodium carbonate aqueous solution of ο" to 3% by mass is used. Thus, the anti-surname hardening of the present invention can be obtained. <Manufacturing Method of Printed Wiring Board> * The method of manufacturing the printed wiring board using the negative photosensitive resin laminate is described below. The present invention provides a method of manufacturing a printed wiring board, comprising the steps of: etching or plating a substrate (c) having a resist pattern formed by a resist cured product obtained by the above-described manufacturing method; The resist hardened material is removed on the substrate (c). In the method of manufacturing a printed wiring board according to the present invention, t is a metal plate to be used for the development step in the manufacturing method of the above-described anti-moisture hardened material by using a metal plate 136693.doc • 37· 200947116 as a substrate (c) On the exposed metal surface, an image pattern of the metal is formed by any of the known methods (methods) or electro-mineral methods. Then, the hardened resist pattern is peeled off by using an aqueous solution which is more alkaline than the alkaline aqueous solution which is usually used for development. The alkaline aqueous solution for peeling is not particularly limited, and an aqueous solution of sodium hydroxide or potassium hydroxide of 1 to 5% by mass is usually used. By forming the image pattern by using the present invention, in addition to the above-mentioned printed wiring board (printed circuit board), a semiconductor package substrate, a lead frame, a rib of a plasma display, or the like can be formed. As shown in Fig. i, the cross section of the resist line obtained by the present invention is shown to be close to a rectangular (rectangular) good shape. That is, the problem of the coarseness of the top of the resist and the narrowness of the bottom of the resist which are produced in the prior art manufacturing method as shown in FIG. 2 is remarkably reduced, and the pre-self-negative photosensitive resin layer as shown in FIG. When the support is peeled off and the exposure is performed, the cross-sectional shape of the resist is formed into a "spool shape", and the problem that the anti-surname agent is large is remarkably reduced. Therefore, the present invention can be particularly well applied to the manufacture of semiconductor package substrates. In the case of manufacturing the lead frame by using the present invention, a metal plate such as copper, a copper alloy or an iron-based alloy is used as the substrate (C), after the exposure step and the development step in the method for producing the anti-surname agent. The exposed substrate surface is etched. Finally, the resist hardened material is peeled off to obtain a desired lead frame. Further, in the case of using the present invention to manufacture a barrier wall of a plasma display panel, a glass rib can be used as the substrate (C), and an exposure step and a development step in the above-described method for producing a cured resist are 136693.doc -38- 200947116 After the surface is processed, the resist is removed, and the substrate pattern of the exposed substrate w convex pattern is obtained by the mouth sand method. [Embodiment] Hereinafter, the present invention will be more specifically described by way of examples. Embodiments, but the present invention is not limited to the embodiments. <Negative photosensitive resin composition> The compositions of the negative photosensitive resin compositions used in the examples and the comparative examples are shown in Tables 1 and 2 below. ❹ ❹ •39· 136693.doc 7 94 o 20 6 ΓΟ •ζ ο ο . /061 ς luw-1uni-1 03 ·0 •ζ ο ο o/olz •ς VZI4^- 03 0Ζ
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C/08Z y09€ 。/01 寸 硃 ®FiF^^wKsuse •w ετιΞ 10- 〇 9 ·寸 iol — 6 ◎ — 一寸丨 to- i6 ◎ OOPS99- • 41 200947116 表中,以縮寫(Ρ-l〜C-l)所表示之負型感光性樹脂組合物 之成分將於以下之 < 符號說明> 中說明。表中,卩-丨及!》·〗之 值為固體成分量。 <符號說明> Ρ-l :曱基丙烯酸30質量%、苯乙烯20質量%、曱基丙烯 酸苄酯50質量%之三元共聚物之曱基乙基酮溶液(固體成分 濃度為40質量%,重量平均分子量為55,〇〇〇,酸當量為 287,玻璃轉移溫度為l〇2°C) P-2:曱基丙烯酸苄酯80質量%、甲基丙烯酸20質量%之 二元共聚物之甲基乙基酮溶液(固體成分濃度為5〇質量%, 重量平均分子量為25,000 ’酸當量為430,玻璃轉移溫度 為 78°C) Μ-1 :於加成有平均12莫耳之環氧丙烷之聚丙二醇的兩 端,分別加成平均3莫耳之環氧乙烷的聚烷二醇之二甲基 丙烯酸西旨 Μ-2 :季戊四醇三丙烯酸酯與季戊四醇四丙烯酸酯之7: 3(莫耳比)混合物 Μ-3 .於雙酚Α之兩端,分別加成平均5莫耳之環氧乙炫 的聚乙二醇之二曱基丙烯酸酯(新中村化學工業股份有限 公司製造之NK ESTER BPE-500) M-4 :四乙二醇二甲基丙烯酸酯 M-5 :三羥曱基丙烷三丙烯酸酯 A-1 : 2-(鄰氣苯基)_4,5_二苯基咪唑二聚物 A-2 : 4,4^雙(二乙基胺基)二笨甲酮 136693.doc -42- 200947116 B-l :鑽石綠(保土谷化學股份有限公司製造之aizen(註 冊商標)DIAMOND GREEN GH) B-2 :隱色結晶紫 C-1 :季戊四醇四[3-(3,5-二-第三丁基_4_羥基笨基)丙酸 酯] <負型感光性樹脂層(B)之形成方法> 以下,就將負型感光性樹脂層(B)形成於支持體(A)上之 方法加以說明。 於實施例及比較例中,以曱基乙基酮作為溶劑,以使非 揮發成分濃度達到50質量%之方式將表i及2所示之成分混 合並均勻地溶解,製備負型感光性樹脂組合物之溶液。使 用棒塗機,將所獲得之負型感光性樹脂組合物之溶液均勻 地塗佈於作為支持體(A)的厚度為2〇 μπι之聚對苯二曱酸乙 一 Sb膜上,於95 C之乾燥器内乾燥3分鐘。乾燥後所獲得 之負型感光性樹脂層(B)之厚度為25 μηι。 开> 成於上述聚對苯二曱酸乙二酯上之負型感光性樹脂層 (Β)於波長365 nm下之光線透過率,係使用日立高新技術 公司製造之U-33 10型分光光度計,將上述聚對苯二甲酸乙 二酯膜放入參照側進行測定。又,此時之狹縫設定為4 nm ’掃描速度設定為600 nm/min。 其-人,於負型感光性樹脂層(B)上貼合作為保護層之厚 度為25 μιη的聚乙烯膜,獲得積層膜。對積層有35 之壓 延銅箔的作為基板(C)之銅箔積層板之表面進行噴砂研 磨,一面將該積層膜之聚乙烯膜剝離,一面利用熱輥貼合 136693.doc -43- 200947116 機於105°C下將負型感光性樹脂層(B)層壓於基板上,獲 得負型感光性樹脂積層體。 <抗蚀劑硬化物之製作> 通過光罩膜,利用投影曝光機(USHI〇電機股份有限公 司製造之UX2003 SM-MS04,使用i線帶通濾波器),以180 mJ/cm2對上述所獲得之負型感光性樹脂積層體照射i線單 色光’從而用1線單色光對負型感光性樹脂層(B)進行曝 光。繼而,喷射30°C之1質量%碳酸鈉水溶液約4〇秒,溶解 去除未曝光部,藉此進行顯影。然後,使用離子交換水, 對殘存之負型感光性樹脂層(B)之硬化部(曝光部)噴射水洗 約20秒’獲得本發明之抗蝕劑硬化物。再者,表1所示之 實施例及比較例中,係於喷射上述碳酸鈉水溶液之前剝離 聚對苯二曱酸〔二醋膜,另外,表2所示之實施例及比較 例中,係於上述曝光之前剝離聚對苯二甲酸乙二酯膜。 曝光感光度係使用亮度自透明至黑色分21階段變化的旭 化成製造之27段階段式曝光表(step tablet)來測定。 使用以下之„平價基準,對所獲得之抗蝕劑硬化物實施評 價。 ⑴解像度:於上述曝光中,使用線與間隙為i : !之光罩膜 進行曝光並顯影。將所獲得之硬化圖案可分離之最小線寬 作為解像度。 ⑺密接性:於上述曝光中,使用線與間隙為 μ_μΐη表示線寬)之光罩料行曝光並顯%。將所獲得之 硬化圖案可密接之最小線寬作為密接性。 136693.doc •44- 200947116 (3)抗蝕劑形狀:於上述曝光中,使用線寬為12 μηι之光罩 膜。使用電子顯微鏡(TOPCON股份有限公司製造之Sm-500) ’於加速電壓15 kV、倍率1,000倍、傾斜角60度下確 認抗姓劑形狀。若抗姓劑頂部與抗姓劑底部間之硬化圖案 線寬之差未滿1 μιη則記為◎,若為1 μπι以上且未滿2 μηι則 記為〇,另外若為2 μηι以上則記為X。 〈實施例1Α〜8Α、比較例1Α〜4Α、實施例1Β〜7Β、比較例 1Β〜4Β> 負型感光性樹脂組合物之成分以及評價結果示於表1及2 中。可確認:波長365 nm下之光線透過率在本發明之範圍 内的貫施例1A〜8 A以及實施例1B〜7B,與光線透過率在本 發明之範圍以外的比較例1A〜4A以及比較例1B〜4B相比, 在包括解像度、密接性以及抗钮劑形狀之評價基準下综合 方面優異。 實施例2 A以及比較例1A中所獲得之抗蝕劑硬化物的抗 敍劑形狀之電子顯微鏡照片分別示於圖1及圖2中。實施例 2A中抗蝕劑形狀接近於矩形,相對於此,比較例丨A中觀 察到抗蝕劑頂部之明顯粗大以及抗蝕劑底部之明顯細窄。 實施例2B以及比較例1B中所獲得之抗蝕劑硬化物的抗蝕 劑开々狀之電子顯微鏡照片分別示於圖3及圖4中。實施例2B 中抗蝕劑形狀接近於矩形,相對於此,比較例⑺中抗蝕劑 底部觀察到細窄,且觀察到抗蝕劑殘足較大(抗蝕劑剖面 形狀為「線轴狀」)。 [產業上之可利用性] 136693.doc -45· 200947116 本發明可廣泛地利用於印刷配線板(印刷電路板)之製 造、積體電路(Integrated Circuit,1C)晶片搭載用引線框架 以及半導體封裝等。 【圖式簡單說明】 圖1係實施例2A之抗蝕劑形狀之電子顯微鏡照片。 圖2係比較例1A之抗蝕劑形狀之電子顯微鏡照片。 圖3係實施例2B之抗蝕劑形狀之電子顯微鏡照片。 圖4係比較例1B之抗蝕劑形狀之電子顯微鏡照片。 136693.doc 46·C/08Z y09€. /01 inch Zhu® FiF^^wKsuse •w ετιΞ 10- 〇9 ·inch iol — 6 ◎ — one inch 丨to- i6 ◎ OOPS99- • 41 200947116 In the table, the negative represented by the abbreviation (Ρ-l~Cl) The components of the photosensitive resin composition will be described in the following <Symbol Description>. In the table, 卩-丨 and! The value of 》·〗 is the amount of solid component. <Symbol Description> Ρ-l: a mercaptoethyl ketone solution of a terpolymer of 30% by mass of mercaptoacrylic acid, 20% by mass of styrene, and 50% by mass of benzyl methacrylate (solid content concentration of 40 mass%) %, weight average molecular weight is 55, 〇〇〇, acid equivalent is 287, glass transition temperature is l 〇 2 ° C) P-2: dimethyl methacrylate 80% by mass, methacrylic acid 20% by mass of binary copolymerization Methyl ethyl ketone solution (solid content concentration of 5% by mass, weight average molecular weight of 25,000 'acid equivalent of 430, glass transition temperature of 78 ° C) Μ-1: an average of 12 moles in addition The two ends of the polypropylene glycol of propylene oxide are respectively added to the average of 3 moles of ethylene oxide polyalkylene glycol dimethacrylate oxime-2: pentaerythritol triacrylate and pentaerythritol tetraacrylate 7: 3 (Morbi) mixture Μ-3. Adding an average of 5 moles of epoxy-glycolized polyethylene glycol dimercapto acrylate to both ends of bisphenol oxime (Xinzhongcun Chemical Industry Co., Ltd.) Manufactured NK ESTER BPE-500) M-4 : Tetraethylene Glycol Dimethacrylate M-5 : Trishydroxyl Propane triacrylate A-1 : 2-(o-phenyl)_4,5-diphenylimidazole dimer A-2 : 4,4^ bis(diethylamino) dimercapto ketone 136693.doc -42- 200947116 Bl : Diamond Green (aizen (registered trademark) DIAMOND GREEN GH manufactured by Hodogaya Chemical Co., Ltd.) B-2: leuco crystal violet C-1: pentaerythritol tetra [3-(3,5-di- Third butyl_4_hydroxyphenyl)propionate] <Formation method of negative photosensitive resin layer (B)> Hereinafter, the negative photosensitive resin layer (B) is formed on a support (A) The method above is explained. In the examples and the comparative examples, the components shown in Tables i and 2 were mixed and uniformly dissolved by using mercaptoethyl ketone as a solvent so that the concentration of the nonvolatile component was 50% by mass to prepare a negative photosensitive resin. A solution of the composition. The solution of the obtained negative photosensitive resin composition was uniformly applied onto a polyethylene terephthalate Sb film having a thickness of 2 μm as a support (A) by using a bar coater at 95 C. Dry in a desiccator for 3 minutes. The thickness of the negative photosensitive resin layer (B) obtained after drying was 25 μm. The light transmittance of the negative photosensitive resin layer (Β) formed on the above polyethylene terephthalate at a wavelength of 365 nm is U-33 10 type spectroscopic manufactured by Hitachi High-Technologies Corporation. The photometer was measured by placing the above polyethylene terephthalate film on the reference side. Further, at this time, the slit was set to 4 nm ′ and the scanning speed was set to 600 nm/min. On the negative photosensitive resin layer (B), a polyethylene film having a thickness of 25 μm was bonded to the protective layer to obtain a laminated film. The surface of the copper foil laminate as the substrate (C) having 35 rolled copper foil laminated thereon was subjected to sandblasting, and the polyethylene film of the laminated film was peeled off, and the film was attached by a heat roller. 136693.doc -43- 200947116 The negative photosensitive resin layer (B) was laminated on a substrate at 105 ° C to obtain a negative photosensitive resin laminate. <Preparation of Resist Hardened Material> The above-mentioned photomask film was used at 180 mJ/cm 2 by a projection exposure machine (UX2003 SM-MS04 manufactured by USHI Electric Co., Ltd., using an i-line band pass filter). The negative photosensitive resin laminate obtained was irradiated with i-line monochromatic light ', and the negative photosensitive resin layer (B) was exposed with 1-line monochromatic light. Then, a 1% by mass aqueous sodium carbonate solution at 30 ° C was sprayed for about 4 sec seconds to dissolve and remove the unexposed portion, thereby performing development. Then, the hardened portion (exposure portion) of the remaining negative photosensitive resin layer (B) was sprayed with water for about 20 seconds using ion-exchanged water to obtain a cured resist of the present invention. Further, in the examples and comparative examples shown in Table 1, the polyethylene terephthalate (diacetate film) was peeled off before the above-mentioned sodium carbonate aqueous solution was sprayed, and in the examples and comparative examples shown in Table 2, The polyethylene terephthalate film was peeled off before the above exposure. The exposure sensitivity was measured using a 27-step stage tablet manufactured by Asahi Kasei, whose brightness was changed from transparent to black in 21 stages. The obtained resist cured product was evaluated using the following "valence basis." (1) Resolution: In the above exposure, a light-shielding film having a line and a gap of i: was used for exposure and development. The minimum line width that can be separated is taken as the resolution. (7) Adhesiveness: In the above exposure, the mask material with line and gap is μ_μΐη indicates line width) and the % of the mask is exposed. The minimum line width of the obtained hardened pattern can be closely connected. 136693.doc •44- 200947116 (3) Resist shape: In the above exposure, a photomask film with a line width of 12 μηι was used. An electron microscope (Sm-500 manufactured by TOPCON Co., Ltd.) was used. The shape of the anti-surname agent is confirmed at an acceleration voltage of 15 kV, a magnification of 1,000 times, and a tilt angle of 60 degrees. If the difference between the line width of the hardened pattern between the top of the anti-surname agent and the anti-surname agent is less than 1 μm, it is marked as ◎. If it is 1 μπι or more and less than 2 μηι, it is denoted by 〇, and if it is 2 μηι or more, it is denoted by X. <Example 1Α~8Α, Comparative Example 1Α~4Α, Example 1Β~7Β, Comparative Example 1Β~4Β> Negative photosensitive tree The composition of the composition and the evaluation results are shown in Tables 1 and 2. It can be confirmed that the light transmittance at a wavelength of 365 nm is within the range of the present invention, and the light transmittance is through the examples 1A to 8A and the examples 1B to 7B. The ratios of the comparative examples 1A to 4A and the comparative examples 1B to 4B which are outside the range of the present invention are superior in terms of the evaluation criteria including the resolution, the adhesion, and the shape of the anti-button agent. Example 2 A and Comparative Example 1A Electron micrographs of the resist shape of the obtained resist cured product are shown in Fig. 1 and Fig. 2. The resist shape in Example 2A is close to a rectangle, whereas the comparative example 观察A is observed. The apparent enlargement of the top of the resist and the apparent narrowness of the bottom of the resist. Electron micrographs of the resist opening of the cured resist obtained in Example 2B and Comparative Example 1B are shown in Fig. 3 and In Fig. 4, the resist shape in Example 2B is close to a rectangular shape, whereas the bottom of the resist is observed to be narrow in the comparative example (7), and the resist residue is observed to be large (the resist profile shape is "Spool"). [Industrial Applicability] 136693.doc -45· 200947116 The present invention can be widely applied to the manufacture of printed wiring boards (printed circuit boards), integrated circuits (1C), lead frames for wafer mounting, and semiconductor packages. Wait. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an electron micrograph of the shape of a resist of Example 2A. Fig. 2 is an electron micrograph of the shape of the resist of Comparative Example 1A. Figure 3 is an electron micrograph of the resist shape of Example 2B. Fig. 4 is an electron micrograph of the shape of the resist of Comparative Example 1B. 136693.doc 46·
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Cited By (2)
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TWI620017B (en) * | 2015-04-08 | 2018-04-01 | Asahi Chemical Ind | Photosensitive resin composition |
TWI683179B (en) * | 2014-12-25 | 2020-01-21 | 日商日立化成股份有限公司 | Photosensitive resin composition, photosensitive element using the same, method for forming resist pattern, and method for manufacturing printed circuit board |
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JP2019133143A (en) * | 2018-01-30 | 2019-08-08 | 旭化成株式会社 | Photosensitive resin laminate and method for manufacturing resist pattern |
KR20210149691A (en) * | 2019-03-29 | 2021-12-09 | 다이요 잉키 세이조 가부시키가이샤 | Photoresist composition and cured product thereof |
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CA2022753C (en) * | 1989-05-17 | 1996-11-12 | Hideki Matsuda | Photocurable resin laminate and method for producing printed circuit board by use thereof |
JP3859934B2 (en) * | 1999-05-27 | 2006-12-20 | 日立化成工業株式会社 | Photosensitive resin composition, photosensitive element, method for producing resist pattern, and method for producing printed wiring board |
JP4364973B2 (en) * | 1999-08-20 | 2009-11-18 | 日本合成化学工業株式会社 | Method for forming phosphor pattern |
JP3487294B2 (en) * | 2001-03-08 | 2004-01-13 | 日立化成工業株式会社 | Photosensitive resin composition and its use |
TW200303895A (en) * | 2002-03-06 | 2003-09-16 | Hitachi Chemical Co Ltd | Photosensitive resin composition |
JP4346315B2 (en) * | 2003-01-14 | 2009-10-21 | 旭化成イーマテリアルズ株式会社 | Photosensitive resin composition and use thereof |
JP4368639B2 (en) * | 2003-08-19 | 2009-11-18 | 株式会社アドテックエンジニアリング | Projection exposure equipment |
JP2005352180A (en) * | 2004-06-10 | 2005-12-22 | Renesas Technology Corp | Method for manufacturing semiconductor device |
KR101017550B1 (en) * | 2006-04-28 | 2011-02-28 | 아사히 가세이 일렉트로닉스 가부시끼가이샤 | Photosensitive resin laminate |
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Cited By (4)
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TWI683179B (en) * | 2014-12-25 | 2020-01-21 | 日商日立化成股份有限公司 | Photosensitive resin composition, photosensitive element using the same, method for forming resist pattern, and method for manufacturing printed circuit board |
TWI620017B (en) * | 2015-04-08 | 2018-04-01 | Asahi Chemical Ind | Photosensitive resin composition |
TWI667539B (en) * | 2015-04-08 | 2019-08-01 | 日商旭化成股份有限公司 | Photosensitive resin composition |
TWI706222B (en) * | 2015-04-08 | 2020-10-01 | 日商旭化成股份有限公司 | Photosensitive resin composition |
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CN102937776B (en) | 2017-04-19 |
CN102937776A (en) | 2013-02-20 |
WO2009078380A1 (en) | 2009-06-25 |
KR101175079B1 (en) | 2012-08-21 |
TWI424266B (en) | 2014-01-21 |
JP5199282B2 (en) | 2013-05-15 |
KR20100032939A (en) | 2010-03-26 |
JPWO2009078380A1 (en) | 2011-04-28 |
CN101952777A (en) | 2011-01-19 |
CN101952777B (en) | 2014-04-09 |
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