CN118131567A - Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board - Google Patents
Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board Download PDFInfo
- Publication number
- CN118131567A CN118131567A CN202410290771.2A CN202410290771A CN118131567A CN 118131567 A CN118131567 A CN 118131567A CN 202410290771 A CN202410290771 A CN 202410290771A CN 118131567 A CN118131567 A CN 118131567A
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- Prior art keywords
- resin composition
- photosensitive
- photosensitive resin
- meth
- mass
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- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000011342 resin composition Substances 0.000 title claims abstract description 60
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- -1 acrylate compound Chemical class 0.000 claims abstract description 77
- 239000011230 binding agent Substances 0.000 claims abstract description 33
- 229920000642 polymer Polymers 0.000 claims abstract description 33
- 150000001875 compounds Chemical class 0.000 claims abstract description 15
- 239000003999 initiator Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000178 monomer Substances 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 15
- 239000002998 adhesive polymer Substances 0.000 claims description 11
- 238000007747 plating Methods 0.000 claims description 11
- MAWOHFOSAIXURX-UHFFFAOYSA-N cyclopentylcyclopentane Chemical group C1CCCC1C1CCCC1 MAWOHFOSAIXURX-UHFFFAOYSA-N 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000001235 sensitizing effect Effects 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 63
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 50
- 239000000243 solution Substances 0.000 description 31
- 238000011161 development Methods 0.000 description 26
- 230000018109 developmental process Effects 0.000 description 26
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 16
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- 239000003960 organic solvent Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 14
- 239000002253 acid Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
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- 125000004182 2-chlorophenyl group Chemical group [H]C1=C([H])C(Cl)=C(*)C([H])=C1[H] 0.000 description 9
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- 239000000852 hydrogen donor Substances 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 8
- 239000001294 propane Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 7
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
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- 206010034972 Photosensitivity reaction Diseases 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 238000005227 gel permeation chromatography Methods 0.000 description 6
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- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 5
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
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- 238000012360 testing method Methods 0.000 description 5
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
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- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- ISAOCJYIOMOJEB-UHFFFAOYSA-N desyl alcohol Natural products C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 4
- 239000000975 dye Substances 0.000 description 4
- 125000003976 glyceryl group Chemical group [H]C([*])([H])C(O[H])([H])C(O[H])([H])[H] 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
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- 238000002834 transmittance Methods 0.000 description 4
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- NREFJJBCYMZUEK-UHFFFAOYSA-N 2-[2-[4-[2-[4-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]phenyl]propan-2-yl]phenoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound C1=CC(OCCOCCOC(=O)C(=C)C)=CC=C1C(C)(C)C1=CC=C(OCCOCCOC(=O)C(C)=C)C=C1 NREFJJBCYMZUEK-UHFFFAOYSA-N 0.000 description 3
- 125000003762 3,4-dimethoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C(OC([H])([H])[H])C([H])=C1* 0.000 description 3
- 125000004207 3-methoxyphenyl group Chemical group [H]C1=C([H])C(*)=C([H])C(OC([H])([H])[H])=C1[H] 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229930185605 Bisphenol Natural products 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OAZWDJGLIYNYMU-UHFFFAOYSA-N Leucocrystal Violet Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 OAZWDJGLIYNYMU-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 238000011156 evaluation Methods 0.000 description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920005862 polyol Polymers 0.000 description 3
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 150000003440 styrenes Chemical class 0.000 description 3
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- JIGUICYYOYEXFS-UHFFFAOYSA-N 3-tert-butylbenzene-1,2-diol Chemical compound CC(C)(C)C1=CC=CC(O)=C1O JIGUICYYOYEXFS-UHFFFAOYSA-N 0.000 description 2
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
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- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
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- 239000011259 mixed solution Substances 0.000 description 2
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Classifications
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/44—Polymerisation in the presence of compounding ingredients, e.g. plasticisers, dyestuffs, fillers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
- C08F257/02—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00 on to polymers of styrene or alkyl-substituted styrenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F265/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
- C08F265/04—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of esters
- C08F265/06—Polymerisation of acrylate or methacrylate esters on to polymers thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
- C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
- C08F290/06—Polymers provided for in subclass C08G
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Medicinal Chemistry (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a photosensitive resin composition, a photosensitive element, a method for forming a resist pattern and a method for manufacturing a printed wiring board. The present invention relates to a photosensitive resin composition containing a binder polymer, a photopolymerizable compound, and a photopolymerization initiator, wherein the binder polymer contains a structural unit derived from a (meth) acrylate compound having a dicyclopentanyl group.
Description
The present application is a divisional application with chinese application No. 202080012620. X, which has application date of 2020, 02/04 and is entitled "photosensitive resin composition, photosensitive element, method for forming resist pattern" and method for manufacturing printed wiring board.
Technical Field
The invention relates to a photosensitive resin composition, a photosensitive element, a method for forming a resist pattern and a method for manufacturing a printed wiring board.
Background
In the field of printed wiring board production, as a resist material used for etching treatment, plating treatment, and the like, a photosensitive resin composition and a photosensitive element (laminate) including a support and a layer (hereinafter referred to as a "photosensitive layer") formed using the photosensitive resin composition on the support are widely used.
When a printed wiring board is manufactured using a photosensitive element, first, a photosensitive layer of the photosensitive element is laminated on a circuit-forming substrate. Then, after the support is peeled off and removed, the predetermined portion of the photosensitive layer is irradiated with an activating beam to cure the exposed portion. Then, the unexposed portions of the photosensitive layer are removed with a developer, thereby forming a resist pattern on the substrate. Then, the substrate on which the resist pattern is formed is subjected to etching treatment or plating treatment using the resist pattern as a mask to form a circuit pattern on the substrate, and finally, the cured portion (resist pattern) of the photosensitive layer is peeled off and removed from the substrate.
As a method of exposure, the photosensitive resin layer can be subjected to pattern exposure by a mask film or the like. In recent years, a projection exposure method has been used in which a photosensitive resin layer is exposed to active light rays of an image projected onto a photomask through a lens. As a light source for the projection exposure method, an ultra-high pressure mercury lamp is used. In general, an exposure apparatus using i-ray monochromatic light (365 nm) as an exposure wavelength, but an exposure wavelength of a mixed radiation of h-ray monochromatic light (405 nm) and ihg is sometimes used.
The projection exposure system is an exposure system capable of ensuring high resolution and high alignment as compared with the contact exposure system. Therefore, the projection exposure method is attracting attention at the moment when miniaturization of circuit formation in a printed wiring board is demanded.
With recent increases in the density of printed wiring boards, there has been an increasing demand for photosensitive resin compositions excellent in resolution (resolution) and adhesion. In particular, in the production of a package substrate, there is a demand for a photosensitive resin composition capable of forming a resist pattern having a line width/line spacing of 10/10 (unit: μm) or less. For example, patent document 1 discloses a technique for improving resolution and adhesion by using a specific photopolymerizable compound.
Technical literature of the prior art
Patent literature
Patent document 1: japanese patent laid-open publication No. 2013-195712
Disclosure of Invention
Technical problem to be solved by the invention
However, in recent years, miniaturization of conductor patterns has progressed, and it has been desired that the photosensitive resin composition forms a finer resist pattern having a line width and a line pitch of 5 μm or less, and even a line width and a line pitch of 1 μm or less.
The present invention has been made in view of the above-described problems of the conventional techniques, and an object of the present invention is to provide a photosensitive resin composition capable of forming a fine resist pattern excellent in resolution and adhesion, a photosensitive element obtained by using the photosensitive resin composition, a method for forming a resist pattern, and a method for manufacturing a printed wiring board.
Means for solving the technical problems
One embodiment of the present invention relates to a photosensitive resin composition containing a binder polymer, a photopolymerizable compound, and a photopolymerization initiator, wherein the binder polymer contains a structural unit derived from a (meth) acrylate compound having a dicyclopentanyl group.
The content of the structural unit derived from the (meth) acrylate compound having a dicyclopentanyl group may be 1 to 50% by mass based on the total mass of the structural units derived from the polymerizable monomers constituting the binder polymer.
The photosensitive resin composition may further contain a sensitizing dye having a maximum absorption at 340nm to 430 nm.
Another aspect of the present invention relates to a photosensitive element including a support and a photosensitive layer formed on the support using the photosensitive resin composition.
Further, another aspect of the present invention relates to a method for forming a resist pattern, comprising: a photosensitive layer forming step of laminating a photosensitive layer containing the photosensitive resin composition or a photosensitive layer of the photosensitive element on a substrate; an exposure step of irradiating a predetermined portion of the photosensitive layer with an active light to form a photo-cured portion; and a developing step of removing the region other than the predetermined portion of the photosensitive layer from the substrate.
Another aspect of the present invention relates to a method for manufacturing a printed wiring board, including: and a step of forming a conductor pattern by performing etching treatment or plating treatment on the substrate on which the resist pattern is formed by the resist pattern forming method.
Effects of the invention
According to the present invention, a photosensitive resin composition capable of forming a fine resist pattern excellent in resolution and adhesion, a photosensitive element obtained by using the photosensitive resin composition, a method for forming a resist pattern, and a method for manufacturing a printed wiring board can be provided.
Detailed Description
The mode for carrying out the present invention will be described in detail below. However, the present invention is not limited to the following embodiments. In the present specification, the term "process" is not limited to an independent process, but is also included in the term as long as the desired function of the process can be achieved even when the process cannot be clearly distinguished from other processes. In the present specification, the term "layer" includes a structure having a shape formed only in a part of the entire surface, as well as a structure having a shape formed in the entire surface when viewed in a plan view. In the present specification, "(meth) acrylic acid" means at least one of "acrylic acid" and "methacrylic acid" corresponding thereto. Other similar expressions for (meth) acrylic esters and the like are also the same.
In the present specification, a numerical range indicated by "to" is a range including numerical values described before and after "to" as a minimum value and a maximum value, respectively. In the numerical ranges described in stages in the present specification, the upper limit value or the lower limit value of the numerical range in one stage may be replaced with the upper limit value or the lower limit value of the numerical range in another stage. In the numerical ranges described in the present specification, the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the embodiment.
When the amounts of the respective components in the composition are mentioned in the present specification, in the case where a plurality of substances conforming to the respective components are present in the composition, the total amount of the plurality of substances present in the composition is referred to unless otherwise specified.
[ Photosensitive resin composition ]
The photosensitive resin composition of the present embodiment contains (a) component: an adhesive polymer, (B) component: photopolymerizable compound and component (C): a photopolymerization initiator. The adhesive polymer comprises structural units derived from a (meth) acrylate compound having a dicyclopentyl group. The photosensitive resin composition may further contain a component (D) as required: sensitizing dye, hydrogen donor (hydrogen donor) or other components having maximum absorption at 340nm to 430 nm. The components used in the photosensitive resin composition of the present embodiment will be described in more detail below.
Component (A) adhesive polymer
According to the photosensitive resin composition of the present embodiment, a fine resist pattern having excellent resolution and adhesion can be formed by containing the above-described components (a) to (C). In particular, it is presumed that resolution and adhesion can be further improved by using a binder polymer containing a structural unit derived from a (meth) acrylate compound having a dicyclopentanyl group.
The component (a) can be produced, for example, as follows: a polymerizable monomer is subjected to radical polymerization, and the polymerizable monomer contains a (meth) acrylate compound having a dicyclopentyl group. From the viewpoint of improving the hydrophobicity of the binder polymer, as the (meth) acrylate compound having dicyclopentyl group, a compound represented by the following formula (1), for example, can be used.
In the formula (1), Y represents a hydrogen atom or a methyl group, R represents an alkylene group having 1 to 4 carbon atoms, X represents a dicyclopentyl group, and n represents an integer of 0 to 2.
Examples of the (meth) acrylate compound having a dicyclopentyl group include: dicyclopentanyl (meth) acrylate, dicyclopentyloxyethyl (meth) acrylate, dicyclopentyloxypropyl (meth) acrylate, and dicyclopentyloxypropyloxyethyl (meth) acrylate. From the viewpoint of further improving the hydrophobicity of the adhesive polymer, dicyclopentanyl (meth) acrylate may be used.
From the viewpoint of further improving the resolution and adhesion of the photosensitive resin composition, the content of the structural unit derived from the (meth) acrylate compound having dicyclopentyl group (hereinafter also referred to as "dicyclopentyl group structural unit") may be 1 to 50 mass%, 3 to 40 mass%, 5 to 30 mass%, or 6 to 25 mass% based on the total mass of the structural units derived from the polymerizable monomers constituting the binder polymer (100 mass%).
From the viewpoint of improving the alkali developability, the component (a) may further contain a structural unit derived from (meth) acrylic acid; from the viewpoints of improving resolution and adhesion and reducing the amount of resist end-forming, a structural unit derived from styrene or a styrene derivative (hereinafter, also referred to as "styrene-based structural unit") may be further included.
From the viewpoint of improving the hydrophobicity of the binder polymer, as styrene or a styrene derivative, a compound represented by the following formula (2) can be used.
In the formula (2), R 11 represents a hydrogen atom or a methyl group, R 12 each independently represents a hydrogen atom, an alkyl group, a (meth) acryloyl group, a phenyl group or a derivative thereof, and n represents an integer of 1 to 5.
Examples of the styrene derivative include: vinyl toluene, alpha-methyl styrene, p-methyl styrene, and p-ethyl styrene.
From the viewpoints of improving resolution and adhesion and reducing the amount of occurrence of resist ends, the content of dicyclopentyl structural units and styrene structural units may be 50 mass% or more, 55 mass% or more, or 58 mass% or more based on the total mass of structural units derived from polymerizable monomers constituting the binder polymer. The content of the dicyclopentyl structural unit and the styrene structural unit may be 85 mass% or less, 80 mass% or less, or 75 mass% or less from the viewpoint that the development time is moderately shortened and development residues are less likely to be generated.
From the viewpoint of improving resolution, adhesion, and suppression of occurrence of resist ends, the content of the structural unit derived from (meth) acrylic acid may be 10 to 40 mass%, 15 to 35 mass%, or 20 to 30 mass% based on the total mass of the structural units derived from the polymerizable monomers constituting the binder polymer.
(A) The composition may further comprise structural units derived from polymerizable monomers other than the above (hereinafter, also referred to as "other monomers"). Examples of the other monomer include: benzyl (meth) acrylate or derivatives thereof, cycloalkyl (meth) acrylate, methyl furanacrylate, methyl tetrahydrofuranyl (meth) acrylate, isobornyl (meth) acrylate, adamantyl (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, glycidyl (meth) acrylate, 2-trifluoroethyl (meth) acrylate, 2, 3-tetrafluoropropyl (meth) acrylate, beta-furyl (meth) acrylic acid, beta-styryl (meth) acrylic acid, maleic anhydride, monoalkyl maleate, fumaric acid, cinnamic acid, alpha-cyanocinnamic acid, itaconic acid, crotonic acid, and propynyl acid. These other monomers may be used singly or in combination of 2 or more.
(A) The weight average molecular weight (Mw) of the component (B) may be 10000 to 80000, 15000 to 70000, 20000 to 50000, 23000 to 40000, or 25000 to 35000. If Mw is 80000 or less, resolution and developability tend to be improved; if Mw is 10000 or more, the following tends to occur: the cured film has improved flexibility, and is less likely to cause defects and peeling of the resist pattern. (A) The dispersity (Mw/Mn) of the components may be 1.0 to 3.0 or 1.0 to 2.3. If the dispersity becomes smaller, the resolution tends to be improved. The weight average molecular weight of the binder polymer can be determined by Gel Permeation Chromatography (GPC) (converted from a calibration curve using standard polystyrene).
(A) The acid value of the component may be 100 to 250mgKOH/g, 120 to 240mgKOH/g, 140 to 230mgKOH/g or 150 to 230mgKOH/g. When the acid value of the component (A) is 100mgKOH/g or more, the development time can be sufficiently suppressed from becoming long; the acid value of the component (A) is 250mgKOH/g or less, whereby the development resistance (adhesion) of the cured product of the photosensitive resin composition can be easily improved.
The acid value of the component (a) can be measured in the following manner. First, 1g of an adhesive polymer as an object of measuring an acid value of the fine balance was measured. To the adhesive polymer of the fine balance, 30g of acetone was added and uniformly dissolved. Next, an appropriate amount of phenolphthalein, an indicator, was added to the solution, and titration was performed using 0.1N aqueous potassium hydroxide (KOH). The acid value was obtained by calculating the mg of KOH required for neutralizing the acetone solution of the binder polymer, which is the object of measurement. When a solution obtained by mixing the binder polymer with a synthetic solvent, a diluting solvent, or the like is used as a measurement object, the acid value is calculated according to the following formula.
Acid number=0.1×vf×56.1/(wp×i/100)
Where Vf represents the titration amount (mL) of the KOH aqueous solution, wp represents the measured mass (g) of the binder polymer-containing solution, and I represents the measured proportion (mass%) of the non-volatile component in the binder polymer-containing solution.
When the binder polymer is blended with volatile components such as a synthetic solvent and a diluent solvent, the mixture may be heated at a temperature of 10 ℃ or higher than the boiling point of the volatile components for 1 to 4 hours before the weighing, and the volatile components may be removed, followed by measurement of the acid value.
In the photosensitive resin composition of the present embodiment, the component (a) may be used alone with 1 kind of binder polymer, or may be used in any combination of 2 or more kinds of binder polymers. As the binder polymer used in combination of 2 or more, there may be mentioned, for example: more than 2 binder polymers composed of different comonomers (comprising different monomer units as comonomers), more than 2 binder polymers of different Mw, more than 2 binder polymers of different dispersities.
The content of the component (a) in the photosensitive resin composition of the present embodiment may be 20 to 90 mass%, 30 to 80 mass%, or 40 to 65 mass% based on the total solid content of the photosensitive resin composition. If the content of the component (A) is 20% by mass or more, the formability of the film tends to be excellent; if the content of the component (A) is 90 mass% or less, sensitivity and resolution tend to be excellent.
Component (B) photopolymerizable Compound
The component (B) is not particularly limited as long as it is a compound having at least 1 ethylenically unsaturated bond and capable of photopolymerization. From the viewpoint of improving alkali developability, resolution, and peeling property after curing, it is preferable that the component (B) contains at least 1 bisphenol type (meth) acrylate; of the bisphenol type (meth) acrylates, bisphenol A type (meth) acrylate is more preferably contained. Examples of bisphenol a type (meth) acrylates include: 2, 2-bis (4- ((meth) acryloxypolyethoxy) phenyl) propane, 2-bis (4- ((meth) acryloxypolypropoxy) phenyl) propane, 2-bis (4- ((meth) acryloxypolybutoxy) phenyl) propane, and 2, 2-bis (4- ((meth) acryloxypolyethoxypropoxy) phenyl) propane. Among them, 2-bis (4- ((meth) acryloxypolyethoxy) phenyl) propane is preferable from the viewpoint of further improving developability and peeling property.
Among these, as bisphenol a type (meth) acrylate which can be commercially obtained, for example, 2-bis (4- ((meth) acryloyloxy dipropyloxy) phenyl) propane, BPE-200 (available from new yo chemical industry Co., ltd.) is exemplified; as 2, 2-bis (4- (methacryloxypentaethoxy) phenyl) propane, BPE-500 (New Zhongcun chemical industry Co., ltd.) and FA-321M (Hitachi chemical Co., ltd.) can be mentioned. The refractive index of BPE-200 was 1.512, and the refractive index of BPE-500 was 1.532. These bisphenol A type (meth) acrylates may be used singly or in combination of 2 or more.
The content of bisphenol type (meth) acrylate may be 40 to 98% by mass, 50 to 97% by mass, 60 to 95% by mass, or 70 to 90% by mass with respect to the total amount of the component (B). If the content is 40 mass% or more, the resolution, adhesion, and suppression of resist edge generation become more excellent; if this content is 98 mass% or less, the development time becomes moderately short, and development residues become less likely to occur.
From the viewpoint of improvement in the flexibility of the cured product (cured film), the component (B) other than the bisphenol-type (meth) acrylate may further contain at least 1 of polyalkylene glycol di (meth) acrylates having at least one of a (poly) oxyethylene chain and a (poly) oxypropylene chain in the molecule, or may further contain polyalkylene glycol di (meth) acrylates having both a (poly) oxyethylene chain and a (poly) oxypropylene chain in the molecule. The content of polyalkylene glycol di (meth) acrylate in the total mass of the component (B) may be 2 to 40 mass%, 3 to 30 mass% or 5 to 20 mass%. Examples of the polyalkylene glycol di (meth) acrylate include: FA-023M (trade name manufactured by Hitachi chemical Co., ltd.), FA-024M (trade name manufactured by Hitachi chemical Co., ltd.), NK ESTER HEMA-9P (trade name manufactured by Xinzhongcun chemical Co., ltd.). These may be used singly or in combination of 1 or more than 2.
As the component (B) other than the above, nonylphenoxy polyethylene oxide acrylate, phthalic acid compound, polyol (meth) acrylate, alkyl (meth) acrylate and the like can be used. Among them, the component (B) may contain at least 1 selected from nonylphenoxy polyethylene oxy acrylate and phthalic acid compounds from the viewpoint of improving resolution, adhesion, resist shape and peeling property after curing in a balanced manner. However, since the refractive index of these compounds is relatively low, the content thereof may be 5 to 50 mass%, 5 to 40 mass%, or 10 to 30 mass% in the total mass of the component (B) from the viewpoint of improving resolution.
Examples of the nonylphenoxy polyethylene oxide acrylate include: nonylphenoxy triethyloxy acrylate, nonylphenoxy tetraethyleneoxy acrylate, nonylphenoxy pentaethyleneoxy acrylate, nonylphenoxy hexaethyleneoxy acrylate, nonylphenoxy heptaethyleneoxy acrylate, nonylphenoxy octaethyleneoxy acrylate, nonylphenoxy nonaethyleneoxy acrylate, nonylphenoxy decaethyleneoxy acrylate, and nonylphenoxy undecethyleneoxy acrylate.
Examples of the phthalic acid compound include: gamma-chloro-beta-hydroxypropyl-beta '- (meth) acryloyloxyethyl-phthalate, beta-hydroxyethyl-beta' - (meth) acryloyloxyethyl-phthalate, and beta-hydroxypropyl-beta '- (meth) acryloyloxyethyl-phthalate, wherein gamma-chloro-beta-hydroxypropyl-beta' - (meth) acryloyloxyethyl-phthalate may be used. Gamma-chloro-beta-hydroxypropyl-beta' - (meth) acryloyloxyethyl-phthalate is commercially available as FA-MECH (trade name manufactured by hitachi chemical Co., ltd.).
The (B) component may contain a (meth) acrylic polyol from the viewpoint of improvement in sensitivity and reduction in end. Examples of the (meth) acrylic polyol ester include: trimethylolpropane polyethoxy tri (meth) acrylate, trimethylolpropane polypropoxy tri (meth) acrylate, trimethylolpropane polybutoxy tri (meth) acrylate, trimethylolpropane polyethoxy polypropoxy tri (meth) acrylate, trimethylolethane polyethoxy tri (meth) acrylate, trimethylolethane polypropoxy tri (meth) acrylate, trimethylolethane polybutoxy tri (meth) acrylate, trimethylolethane polyethoxy polypropoxy tri (meth) acrylate, pentaerythritol polyethoxy tri (meth) acrylate, pentaerythritol polypropoxy tri (meth) acrylate, pentaerythritol polybutoxy tri (meth) acrylate, pentaerythritol polyethoxy polypropoxy tri (meth) acrylate, glyceryl polyethoxy tri (meth) acrylate, glyceryl polypropoxy tri (meth) acrylate, glyceryl polybutoxy tri (meth) acrylate, and glyceryl polyethoxy polypropoxy tri (meth) acrylate.
The content of the component (B) is preferably 20 to 60 parts by mass, more preferably 30 to 55 parts by mass, and even more preferably 35 to 50 parts by mass, relative to 100 parts by mass of the total of the component (a) and the component (B). When the component (B) is within this range, the resolution and adhesion of the photosensitive resin composition and the resist end-point productivity are improved, and the photosensitivity and the film-coating property are also improved.
Component (C) photopolymerization initiator
The component (C) is not particularly limited, and a hexaarylbisimidazole derivative or an acridine compound having 1 or more acridine groups may be used from the viewpoint of improving sensitivity and resolution in a balanced manner. In particular, when the exposure of the photosensitive layer is performed using an active light of 390nm to 420nm, the component (C) may contain an acridine compound having 1 or more acridine groups from the viewpoints of sensitivity and adhesion.
Examples of the hexaarylbiimidazole derivative include: 2- (o-chlorophenyl) -4, 5-diphenylbiimidazole, 2', 5-tris- (o-chlorophenyl) -4- (3, 4-dimethoxyphenyl) -4',5' -diphenylbiimidazole, 2, 4-bis- (o-chlorophenyl) -5- (3, 4-dimethoxyphenyl) -diphenylbiimidazole, 2,4, 5-tris- (o-chlorophenyl) -diphenylbiimidazole, 2- (o-chlorophenyl) -bis-4, 5- (3, 4-dimethoxyphenyl) -biimidazole, 2' -bis- (2-fluorophenyl) -4,4',5,5' -tetrakis- (3-methoxyphenyl) -biimidazole, 2' -bis- (2, 3-difluoromethylphenyl) -4,4', 5' -tetrakis- (3-methoxyphenyl) -biimidazole, 2' -bis- (2, 4-difluorophenyl) -4,4', 5' -tetrakis- (3-methoxyphenyl) -biimidazole and 2,2' -bis- (2, 5-difluorophenyl) -4,4', 5' -tetrakis- (3-methoxyphenyl) -biimidazole. Among them, 2- (o-chlorophenyl) -4, 5-diphenyl-bisimidazole dimer is preferred from the viewpoint of sensitivity and resolution. 2,2' -bis (2-chlorophenyl) -4,4', 5' -tetraphenyl-1, 2-biimidazole is commercially available as "B-CIM" manufactured by Baogu chemical industries, inc. as a 2- (o-chlorophenyl) -4, 5-diphenylbiimidazole dimer.
As the acridine compound, for example, there may be mentioned: bis (9-acridinyl) alkanes such as 9-phenylacridine, 9- (p-tolyl) acridine, 9- (m-tolyl) acridine, 9- (p-chlorophenyl) acridine, 9-aminoacridine, 9-dimethylaminoacridine, 9-diethylaminoacridine, 9-pentylaminoacridine, 1, 2-bis (9-acridinyl) ethane, 1, 4-bis (9-acridinyl) butane, 1, 6-bis (9-acridinyl) hexane, 1, 8-bis (9-acridinyl) octane, 1, 10-bis (9-acridinyl) decane, 1, 12-bis (9-acridinyl) dodecane, 1, 14-bis (9-acridinyl) tetradecane, 1, 16-bis (9-acridinyl) hexadecane, 1, 18-bis (9-acridinyl) octadecane, and 1, 20-bis (9-acridinyl) eicosane; 1, 3-bis (9-acridinyl) -2-oxapropane, 1, 3-bis (9-acridinyl) -2-thiopropane, 1, 5-bis (9-acridinyl) -3-thiopentane, and the like. These other components can be used singly or in combination of 2 or more.
Examples of the other photopolymerization initiator include: benzophenone such as 4,4' -bis (diethylamino) benzophenone; aromatic ketones such as 2-benzyl-2-dimethylamino-1- (4-morpholinylphenyl) -butanone-1, 2-methyl-1- [4- (methylthio) phenyl ] -2-morpholinyl-propanone-1; quinone compounds such as alkylanthraquinone; benzoin ether compounds such as benzoin alkyl ether; benzoin compounds such as benzoin and alkylbenzoin; benzyl derivatives such as benzyl dimethyl ketal, N-phenylglycine derivatives; acyl phosphine oxide-based photopolymerization initiators such as 2,4, 6-trimethylbenzoyl-diphenyl-phosphine oxide and bis (2, 4, 6-trimethylbenzoyl) -phenylphosphine oxide; oxime ester compounds such as1, 2-octanedione, 1- [4- (phenylthio) phenyl-, 2- (O-benzoyloxime) ], ethanone, 1- [ 9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl ] -, and 1- (O-acetyloxime). These may be used in combination with hexaarylbiimidazole or acridine compounds.
The content of the component (C) may be 0.1 to 10% by mass, 1 to 5% by mass, or 2 to 4.5% by mass based on the total solid content of the photosensitive resin composition. When the content of the component (C) is within the above range, it is easy to uniformly improve both the photosensitivity and the resolution. From the viewpoint of balance of photosensitivity and resolution, the content of the component (C) may be 0.5 to 10 parts by mass, 1 to 8 parts by mass, or 1.5 to 5 parts by mass with respect to 100 parts by mass of the total amount of the component (A) and the component (B).
((D) component: sensitizer)
The photosensitive resin composition of the present embodiment may further contain a sensitizer. Thus, the photosensitivity of the photosensitive resin composition becomes further excellent. Examples of the sensitizer include: a dialkylaminobenzophenone compound, a pyrazoline compound, an anthracene compound, a coumarin compound, a xanthone compound, an oxazole compound, a benzoxazole compound, a thiazole compound, a benzothiazole compound, a triazole compound, a stilbene (stillene) compound, a triazine compound, a thiophene compound, a naphthalimide compound, and a triarylamine compound. These can be used singly or in combination of 2 or more. (D) The component (A) may contain a sensitizing dye having a maximum absorption at 340 to 430 nm. When exposure of the photosensitive layer is performed using active light of 340 to 430nm, at least 1 selected from the group consisting of a pyrazoline compound, an anthracene compound, a coumarin compound, and a triarylamine compound may be included from the viewpoint of sensitivity and adhesion, and at least 1 selected from the group consisting of a pyrazoline compound, an anthracene compound, and a triarylamine compound may be included.
When the photosensitive resin composition contains the component (D), the content of the component (D) may be 0.01 to 10% by mass, 0.05 to 5% by mass, or 0.1 to 3% by mass, based on the total solid content of the photosensitive resin composition. The sensitivity and resolution are further improved by the content of the component (D) being 0.01 mass% or more; when the content of the component (D) is 10 mass% or less, the resist shape is suppressed from becoming inverted trapezoid, and the adhesion is further improved. From the viewpoint of balance between resolution and adhesion, the content of the component (D) may be 0.05 to 5 parts by mass, 0.1 to 5 parts by mass, or 0.5 to 3 parts by mass with respect to 100 parts by mass of the total amount of the component (a) and the component (B).
(Hydrogen donor)
The photosensitive resin composition may further contain a hydrogen donor. Thus, the sensitivity of the photosensitive resin composition becomes further excellent. Examples of the hydrogen donor include: bis [4- (dimethylamino) phenyl ] methane, bis [4- (diethylamino) phenyl ] methane, N-phenylglycine, and leuco crystal violet (leuco crystal violet). These can be used singly or in combination of 2 or more.
When the photosensitive resin composition contains a hydrogen donor, the content thereof may be 0.01 to 10 mass%, 0.05 to 5 mass%, or 0.1 to 2 mass% based on the total solid content of the photosensitive resin composition. The sensitivity can be further improved by the content of the hydrogen donor being 0.01 mass% or more; when the content of the hydrogen donor is 10 mass% or less, the deposition of the excessive hydrogen donor as a foreign matter after the formation of the thin film can be suppressed.
(Other Components)
The photosensitive resin composition may further contain other components as needed. Examples of the other components include: photopolymerizable compounds having at least 1 cyclic ether group capable of cationic polymerization in the molecule (oxetane compounds and the like), cationic polymerization initiators, dyes (malachite and the like), tribromophenyl sulfones, photo-developers, thermal color development inhibitors, plasticizers (p-toluenesulfonamide and the like), polymerization inhibitors (t-butylcatechol and the like), silane coupling agents, pigments, fillers, defoamers, flame retardants, stabilizers, adhesion imparting agents (benzotriazole and the like), leveling agents, peeling accelerators, antioxidants, fragrances, imaging agents (IMAGING AGENT), thermal crosslinking agents and the like. These can be used singly or in combination of 2 or more. The content of each of the other components may be about 0.01 to 20% by mass.
In order to improve the handleability of the photosensitive composition or to adjust the viscosity and the storage stability, the photosensitive resin composition can contain at least 1 organic solvent. As the organic solvent, a commonly used organic solvent can be used without particular limitation. Examples of the organic solvent include: methanol, ethanol, acetone, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, N-dimethylformamide, propylene glycol monomethyl ether, and a mixed solvent of these. For example, the component (a), the component (B) and the component (C) can be dissolved in an organic solvent to prepare a solution having a solid content of about 30 to 60 mass% (hereinafter referred to as a "coating liquid"). The solid component is the remaining component obtained by removing volatile components from the solution of the photosensitive resin composition.
[ Photosensitive element ]
The photosensitive element of the present embodiment includes a support and a photosensitive layer formed on the support and containing the photosensitive resin composition. When the photosensitive element of the present embodiment is used, exposure can be performed without peeling the support after the photosensitive layer is laminated on the substrate.
(Support)
As the support, the following polymer film (support film) having heat resistance and solvent resistance can be used: polyesters such as polyethylene terephthalate (PET); polyolefins such as polypropylene and polyethylene. Among them, PET films are preferable from the viewpoints of easy availability and excellent handleability (particularly heat resistance, heat shrinkage, and breaking strength) in the production process.
The haze (haze) of the support may be 0.01 to 1.0% or 0.01 to 0.5%. If the haze of the support is 0.01% or more, the support itself tends to be easily manufactured; if the haze of the support is 1.0% or less, the occurrence of minute defects in the resist pattern tends to be reduced. Herein, "haze" refers to turbidity. The haze in the present invention is a value measured by a commercially available haze meter (nephelometer) according to a method defined in JIS K7105. Haze can be measured by a commercially available haze meter such as NDH-5000 (manufactured by Nippon electric color industry Co., ltd.).
The particle-containing support may be one in which particles having a diameter of 5 μm or more, etc. contained in the support are 5 particles/mm 2 or less. This improves the sliding property of the surface of the support, suppresses light scattering during exposure uniformly, and improves resolution and adhesion. The average particle diameter of the particles may be 5 μm or less, 1 μm or less, or 0.1 μm or less. The lower limit of the average particle diameter is not particularly limited, and may be 0.001 μm or more.
Examples of such a commercially available support include: the biaxially oriented PET film having a three-layer structure comprising particles in the outermost layer, namely, "QS-48" (Dongli Co., ltd.), "FB-40" (Dongli Co., ltd.), "HTF-01" (Diperson DuPont film Co., ltd.); a biaxially oriented PET film "A-1517" having a two-layer structure with a layer containing particles on one side (Toyo-yo Co., ltd.).
The thickness of the support may be 1 to 100 μm, 5 to 50 μm or 5 to 30 μm. When the thickness is 1 μm or more, breakage of the support can be suppressed when the support is peeled off; the reduction in resolution can be suppressed by the thickness of 100 μm or less.
(Protective layer)
The photosensitive element may further include a protective layer as needed. As the protective layer, a film having smaller adhesion between the photosensitive layer and the protective layer than between the photosensitive layer and the support may be used, and a film having low fish eyes (fish eyes) may be used. Specifically, for example, a film used as the support can be cited. From the standpoint of releasability from the photosensitive layer, a polyethylene film may be used. The thickness of the protective layer may vary depending on the application and may be 1 to 100. Mu.m.
[ Method for producing photosensitive element ]
For example, the photosensitive element can be manufactured as follows. The method can be carried out by a production method comprising the steps of: the method includes preparing the coating liquid, coating the coating liquid on a support to form a coating layer, and drying the coating layer to form a photosensitive layer. The coating of the coating liquid on the support can be performed by a known method such as roll coating, corner-cut wheel coating, gravure coating, air knife coating, die coating, bar coating, or the like.
The drying of the coating layer is not particularly limited as long as at least a part of the organic solvent can be removed from the coating layer. Drying is carried out, for example, at 70 to 150℃for 5 to 30 minutes. After drying, the amount of the organic solvent remaining in the photosensitive layer may be2 mass% or less from the viewpoint of preventing the organic solvent from diffusing in the subsequent steps.
The thickness of the photosensitive layer in the photosensitive element may be appropriately selected depending on the application, and may be 1 to 100 μm, 1 to 50 μm, 1 to 40 μm, or 5 to 20 μm in terms of the thickness after drying. The thickness of the photosensitive layer is 1 μm or more, so that industrial coating becomes easy and productivity is improved; the thickness of the photosensitive layer is 100 μm or less, whereby the adhesion and resolution are further improved.
The transmittance of the photosensitive layer to ultraviolet rays may be 5 to 75%, 10 to 65%, or 15 to 55% for ultraviolet rays having a wavelength of 365 nm. By having a transmittance of 5% or more, the adhesion is further improved. The resolution is further improved by the transmittance being 75% or less. The transmittance can be measured by a UV spectrometer. The UV spectrometer may be a 228A type W beam spectrometer (hitachi corporation).
The photosensitive element can be suitably used in, for example, the following resist pattern formation method. Among them, from the viewpoint of resolution, the method is suitably applied to a method for producing a conductor pattern by plating treatment.
[ Method of Forming resist Pattern ]
The method for forming a resist pattern according to the present embodiment includes: a photosensitive layer forming step of laminating a photosensitive layer containing the photosensitive resin composition or a photosensitive layer of the photosensitive element on a substrate; an exposure step of irradiating a predetermined portion of the photosensitive layer with an active light to form a photo-cured portion; and a developing step of removing the region other than the predetermined portion of the photosensitive layer from the substrate. The method for forming the resist pattern may have other steps as needed. The resist pattern may be referred to as a photo-cured product pattern of the photosensitive resin composition, or may be referred to as a concave-convex pattern (RELIEF PATTERN) of the photosensitive resin composition. The method of forming the resist pattern may also be referred to as a method of manufacturing a substrate with a resist pattern.
(Photosensitive layer Forming Process)
As a method of forming the photosensitive layer on the substrate, for example, a photosensitive resin composition may be applied and dried, or a protective layer may be removed from the photosensitive element and then bonded to the substrate while heating the photosensitive layer of the photosensitive element. When a photosensitive element is used, a laminate composed of a substrate, a photosensitive layer, and a support, which are laminated in this order, can be obtained. The substrate is not particularly limited, and a substrate for forming a circuit, which includes an insulating layer and a conductor layer formed on the insulating layer, or a lower pad (base material for a lead frame) such as an alloy base material can be generally used.
When a photosensitive element is used, it is preferably performed under reduced pressure from the standpoint of adhesion and followability. The photosensitive layer and/or the substrate may be heated at a temperature of 70 to 130 ℃ during the press-bonding. The pressure bonding can be performed with a pressure of about 0.1 to 1.0MPa (about 1 to 10kgf/cm 2), and these conditions can be appropriately selected as needed. Further, when the photosensitive layer is heated to 70 to 130 ℃, the substrate does not need to be subjected to preheating treatment in advance, but the substrate can be subjected to preheating treatment in order to further improve adhesion and follow-up property.
(Exposure Process)
In the exposure step, at least a part of the photosensitive layer formed on the substrate is irradiated with an activating beam, and a portion irradiated with the activating beam is photo-cured, thereby forming a latent image. In this case, when the support present on the photosensitive resin layer is transparent to the active light, the active light can be irradiated through the support, but when the support is light-shielding, the support is removed and then the photosensitive resin layer is irradiated with the active light.
The exposure method includes the following method (mask exposure method): the active light is irradiated in an image shape through a negative or positive mask called an original (artwork). Also, the following method may be employed: the active light is irradiated in an image form according to the projection exposure method.
As the light source of the active light, a known light source can be used, and for example: carbon arc lamp, mercury vapor arc lamp, high pressure mercury lamp, xenon lamp; gas laser such as argon laser; solid laser such as YAG laser; a light source such as a semiconductor laser which effectively emits ultraviolet rays. The wavelength of the active light may be in the range of 340nm to 430 nm.
(Developing step)
In the developing step, at least a part of the photosensitive layer other than the photo-cured portion is removed from the substrate, thereby forming a resist pattern on the substrate. When the support is present on the photosensitive layer, the support is removed first, and then the region (which may be referred to as an unexposed region) other than the above-described light-cured portion is removed (developed). Wet development and dry development exist in the development method, but wet development is widely used.
When wet development is used, a developer corresponding to the photosensitive resin composition is used, and development is performed according to a known development method. As the development method, there are used a method using a dipping method, a liquid coating (paddle) method, a spraying method, a brushing (brushing), a beating (slapping), scraping, shaking dipping, and the like, and from the viewpoint of improving the resolution, a high-pressure spraying method may be used. More than 2 of these methods may be combined to perform development.
The composition of the developing solution can be appropriately selected according to the composition of the photosensitive resin composition. Examples include: an alkaline aqueous solution and an organic solvent developer.
From the standpoint of safety, stability and good handleability, an aqueous alkaline solution can be used as the developer. As the base of the alkaline aqueous solution, it is possible to use: an alkaline hydroxide such as a hydroxide of lithium, sodium or potassium; alkaline carbonates such as lithium, sodium, potassium or ammonium carbonates or bicarbonates; alkali metal phosphates such as potassium phosphate and sodium phosphate; alkali metal pyrophosphates such as sodium pyrophosphate and potassium pyrophosphate; borax, sodium metasilicate, tetramethyl ammonium hydroxide, ethanolamine, ethylenediamine, diethylenetriamine, 2-amino-2-hydroxymethyl-1, 3-propanediol, 1, 3-diaminopropanol-2, morpholine, etc.
As the alkaline aqueous solution for development, it is possible to use: a dilute solution of 0.1 to 5 mass% sodium carbonate, a dilute solution of 0.1 to 5 mass% potassium carbonate, a dilute solution of 0.1 to 5 mass% sodium hydroxide, a dilute solution of 0.1 to 5 mass% sodium tetraborate, and the like. The pH of the alkaline aqueous solution used for development may be set in the range of 9 to 11, and the temperature thereof may be adjusted in accordance with the alkali developability of the photosensitive layer. The alkaline aqueous solution may be mixed with, for example, a surfactant, an antifoaming agent, a small amount of an organic solvent for promoting development, and the like. Examples of the organic solvent used in the alkaline aqueous solution include: acetone, ethyl acetate, alkoxyethanol having an alkoxy group having 1 to 4 carbon atoms, ethanol, isopropanol, butanol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, and diethylene glycol monobutyl ether. Examples of the organic solvent used in the organic solvent developer include: 1, 1-trichloroethane, N-methylpyrrolidone, N-dimethylformamide, cyclohexanone, methyl isobutyl ketone and gamma-butyrolactone. In order to prevent the occurrence of fire, water may be added to the organic solvents in a range of 1 to 20 mass%, to prepare an organic solvent developer.
In the method for forming a resist pattern according to the present embodiment, after removing the uncured portion in the developing step, the method may include the following steps as needed: the resist pattern is further cured by heating at about 60 to 250℃or exposing at about 0.2 to 10J/cm 2.
[ Method for manufacturing printed Circuit Board ]
The method for manufacturing a printed wiring board according to the present embodiment includes: and a step of forming a conductor pattern by performing etching treatment or plating treatment on the substrate on which the resist pattern is formed by the resist pattern forming method. The method for manufacturing a printed wiring board may include other steps such as a resist pattern removal step, if necessary.
The plating process is performed on a conductor layer provided on a substrate using a resist pattern formed on the substrate as a mask. After the plating process, the resist is removed by removing a resist pattern described later, and the conductor layer covered with the resist is etched to form a conductor pattern. The plating treatment may be an electrolytic plating treatment or an electroless plating treatment, but may be an electroless plating treatment. The etching process is to form a conductor pattern by etching and removing a conductor layer provided on a substrate using a resist pattern formed on the substrate as a mask. The method of etching treatment can be appropriately selected according to the conductor layer to be removed. Examples of the etching liquid include: copper chloride solution, ferric chloride solution, alkali etching solution, hydrogen peroxide etching solution, and the like.
After the etching treatment or plating treatment, the resist pattern on the substrate may be removed. The resist pattern can be removed, for example, by stripping with an aqueous alkaline solution stronger than the aqueous alkaline solution used in the development step. As the strongly alkaline aqueous solution, for example, 1 to 10 mass% aqueous sodium hydroxide solution, 1 to 10 mass% aqueous potassium hydroxide solution, and the like can be used.
When the resist pattern is removed after the plating treatment is performed, a desired printed wiring board can be further manufactured by: the conductor layer which has been coated with the resist is etched by an etching process, thereby forming a conductor pattern. The method of the etching treatment at this time can be appropriately selected according to the conductor layer to be removed. The etching liquid described above can be applied.
The method for manufacturing a printed wiring board according to the present embodiment can be applied not only to manufacturing a single-layer printed wiring board but also to manufacturing a multilayer printed wiring board, and also to manufacturing a printed wiring board or the like having a small-diameter through hole.
Examples
Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples. Unless otherwise specified, "parts" and "%" are based on mass.
(Adhesive Polymer (A-1))
Solution a was prepared by mixing 95g of methacrylic acid, 232g of styrene, 26g of dicyclopentanyl methacrylate and 4g of azobisisobutyronitrile as polymerizable monomers (monomers). Then, 0.4g of azobisisobutyronitrile was mixed with a mixed solution (mass ratio 3:2) of 11g of 1-methoxy 2-propanol and 6g of toluene to prepare a solution b.
A flask equipped with a stirrer, a reflux condenser, a thermometer, a dropping funnel and a nitrogen gas pipe was charged with 17g of a mixed solution of 11g of 1-methoxy-2-propanol and 6g of toluene (mass ratio: 3:2). Then, nitrogen was blown into the flask while stirring, and the temperature was raised to 80 ℃.
After the solution a was dropped into the mixture in the flask over 4 hours, the mixture was stirred at 80℃for 2 hours. Then, the solution b was added dropwise to the solution in the flask over 10 hours, and then stirred at 80℃for 2 hours. The solution in the flask was further heated to 95℃over 30 minutes with continuous stirring. Then, the solution b was added dropwise thereto over 10 minutes, and the mixture was stirred at 95℃for 3 hours. Then, stirring was stopped and cooled to room temperature to obtain a solution of the binder polymer (A-1). In the present specification, room temperature means 25 ℃.
The Mw of the adhesive polymer (A-1) was 29800.Mw is derived by: the measurement was performed by Gel Permeation Chromatography (GPC), and the conversion was performed using a calibration curve of standard polystyrene. The conditions of GPC are as follows.
(GPC conditions)
Chromatographic column: connection GELPACK GL-R440, GELPACK GL-R450 and GELPACK GL-R400M (Hitachi chemical Co., ltd.)
Eluent: tetrahydrofuran (THF)
Measuring temperature: 40 DEG C
Flow rate: 2.05 mL/min
A detector: hitachi L-2490 type RI (Hitachi manufacturing company, inc.)
(Adhesive polymers (A-2) and (A-3))
The same procedure as for the solution for obtaining the binder polymer (A-1) was conducted except that methacrylic acid, styrene, benzyl methacrylate and dicyclopentanyl methacrylate were used as polymerizable monomers in the mass ratios shown in Table 1, to obtain solutions for the binder polymers (A-2) and (A-3).
(Adhesive Polymer (A-4))
The same procedure as for the solution for obtaining the binder polymer (A-1) was conducted except that methacrylic acid, methyl methacrylate, styrene and benzyl methacrylate were used as polymerizable monomers in the mass ratios shown in Table 1, to obtain a solution for the binder polymer (A-4).
The mass ratios (%) and Mw of the binder polymers (A-1) to (A-4) are shown in Table 1.
TABLE 1
Examples 1 to 3 and comparative example 1
Preparation of photosensitive resin composition
The photosensitive resin compositions of examples and comparative examples were prepared by mixing the binder polymers (a-1) to (a-4) with the photopolymerizable compound (B), the photopolymerization initiator (C), the sensitizer (D), the other components and the solvent in the amounts (parts by mass) shown in table 2. The amount of the binder polymer shown in table 2 was not the mass of the nonvolatile component (solid content).
((B) photopolymerizable Compound)
FA-024M: (PO) (EO) (PO) modified polyethylene glycol dimethacrylate (EO: 6mol on average and PO: 12mol on average) (trade name manufactured by Hitachi chemical Co., ltd.)
FA-321M:2, 2-bis (4- (methacryloxypentaethoxy) phenyl) propane (trade name manufactured by Hitachi chemical Co., ltd.)
BPE-200: ethoxylated bisphenol A dimethacrylate (modified with EO average of 4 mol) (trade name manufactured by Xinzhongcun chemical industry Co., ltd.)
((C) photopolymerization initiator)
B-CIM:2,2' -bis (2-chlorophenyl) -4,4', 5' -tetraphenyl-1, 2-bisimidazole (trade name, manufactured by Baotu chemical industry Co., ltd.)
((D) sensitizer)
PZ-501D: 1-phenyl-3- (4-methoxystyryl) -5- (4-methoxyphenyl) pyrazoline (trade name, manufactured by Nippon chemical industry Co., ltd.)
SF-808H: benzotriazole derivative (SANWA manufactured by chemical Co., ltd., trade name)
(Other Components)
LCV: colorless crystal violet (trade name manufactured by mountain land chemical Co., ltd.)
MKG: malachite green (trade name manufactured by Osaka organic chemical industry Co., ltd.)
TBC: tert-butylcatechol (trade name, manufactured by Fuji film and light purity Chemicals Co., ltd.)
KBM-803: 3-mercaptopropyl-trimethoxysilane (trade name, manufactured by Xinyue chemical industry Co., ltd.)
< Production of photosensitive element >)
A16 μm thick polyethylene terephthalate film (trade name: FB40, manufactured by Toli Co., ltd.) was uniformly coated with the solution of the photosensitive resin composition, and after drying it for 10 minutes with a hot air convection dryer at 90 ℃, the resultant was protected with a polyethylene film (trade name: NF-15A, manufactured by TAMAPOLY Co., ltd.) to obtain a photosensitive resin composition laminate (photosensitive element). The film thickness of the dried photosensitive layer was 5. Mu.m.
< Fabrication of laminate >)
The copper sputtering wafer (trade name: AMT) was washed with water, acid washed and then dried with an air stream. Then, the copper-sputtered wafer was heated to 80 ℃, and a photosensitive element was laminated (layered) on the copper surface of the copper-sputtered wafer. The photosensitive layer of the photosensitive element was laminated with the copper surface of the copper sputtering wafer in contact with the protective layer being peeled off, using a hot roll at 110℃and a press-bonding pressure of 0.4MPa and a roll speed of 1.0 m/min. In this manner, a laminate including a copper sputtering wafer, a photosensitive layer, and a support, which were laminated in this order, was obtained. The obtained laminate was used as a test piece for the test shown below.
(Evaluation of photosensitivity)
An optical tool (photo tool) having a stage exposure meter of 41 stages, the concentration area of which is 0.00 to 2.00, the concentration stage is 0.05, the size of the exposure meter is 20mm×187mm, and the size of each stage is 3mm×12mm, as a negative mask, is placed on a support of a test piece. Next, a projection exposure apparatus (trade name: ASS MK1.3 Ck-Lens manufactured by Cerma Precision Co., ltd.) using a semiconductor laser having a wavelength of 355nm as a light source was used to expose the photosensitive layer with a predetermined energy.
After exposure, the support was peeled off to expose the photosensitive layer, and a1 mass% aqueous sodium carbonate solution at 30 ℃ was sprayed for 2 times the shortest development time (the shortest time in which the unexposed portion could be removed), thereby removing the unexposed portion (development treatment). After the development treatment, the energy (mJ/cm 2) at which the number of steps of the stepwise exposed plate of the photocurable film formed on the substrate was 10.0 steps was obtained, and the photosensitivity of the photosensitive resin composition was evaluated. The results are shown in Table 2. In addition, the smaller the value, the higher the sensitivity.
(Evaluation of resolution and adhesion)
The support of the test piece was exposed to energy of 10.0 residual steps after the residual image after development in a Hitachi 41-step exposure meter using a glass-chrome type optical tool (resolution negative: negative having a line pattern with a line width/line distance of x/x (x: 1 to 18; unit: μm) and an adhesion negative: negative having a line pattern with a line width/line distance of x/x (x: 1 to 18; unit: μm)) as the resolution negative and the adhesion evaluation negative. After exposure, development treatment was performed in the same manner as in the above-described light sensitivity measurement test.
After the development treatment, in the resist pattern formed in the case where the pitch portion (unexposed portion) was removed and the line portion (exposed portion) was free from warpage and defects, resolution and adhesion were evaluated based on the value of the minimum line width/line spacing. The results are shown in Table 2. The smaller the number, the better the resolution and adhesion.
TABLE 2
From table 2, it was confirmed that the photosensitive resin compositions of examples 1 to 3 were excellent in resolution and adhesion and were capable of forming fine resist patterns, as compared with comparative example 1.
Claims (7)
1. A photosensitive resin composition comprising a binder polymer, a photopolymerizable compound and a photopolymerization initiator,
The adhesive polymer comprises structural units derived from a (meth) acrylate compound having a dicyclopentyl group.
2. The photosensitive resin composition according to claim 1, wherein,
The content of the structural unit derived from the (meth) acrylate compound having dicyclopentanyl group is 1 to 50% by mass based on the total mass of the structural units derived from the polymerizable monomers constituting the binder polymer.
3. The photosensitive resin composition according to claim 1 or 2, further comprising a sensitizing dye having a maximum absorption at 340nm to 430 nm.
4. A photosensitive element comprising a support and a photosensitive layer formed on the support and comprising the photosensitive resin composition according to any one of claims 1 to 3.
5. A method of forming a resist pattern, comprising:
A photosensitive layer forming step of laminating a photosensitive layer containing the photosensitive resin composition according to any one of claims 1 to 3 or a photosensitive layer of the photosensitive element according to claim 4 on a substrate;
an exposure step of irradiating a predetermined portion of the photosensitive layer with an active light to form a photo-cured portion; and
And a developing step of removing a region of the photosensitive layer other than the predetermined portion from the substrate.
6. The method for forming a resist pattern according to claim 5, wherein,
The wavelength of the active light is in the range of 340nm to 430 nm.
7. A method of manufacturing a printed wiring board, comprising: a step of forming a conductor pattern by performing an etching treatment or a plating treatment on the substrate on which the resist pattern is formed by the resist pattern forming method according to claim 5 or 6.
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| CN202080012460.XA CN113412289B (en) | 2019-02-05 | 2020-02-04 | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for manufacturing printed wiring board |
| PCT/JP2020/004182 WO2020162464A1 (en) | 2019-02-05 | 2020-02-04 | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board |
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| WO2022191125A1 (en) * | 2021-03-09 | 2022-09-15 | 昭和電工マテリアルズ株式会社 | Photosensitive film, photosensitive element, and production method for layered product |
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| JP4172209B2 (en) * | 2002-05-31 | 2008-10-29 | 日立化成工業株式会社 | Photosensitive resin composition, photosensitive element using the same, method for producing resist pattern, and method for producing printed wiring board |
| CN102070744B (en) * | 2009-11-19 | 2014-12-17 | Dnp精细化工股份有限公司 | Binder resin for resist ink and resist ink using the same |
| KR20130047656A (en) * | 2011-10-31 | 2013-05-08 | 히타치가세이가부시끼가이샤 | Photosensitive resin composition, photosensitive element, method for forming resist pattern, and method for producing printed wiring board |
| JP2013195712A (en) | 2012-03-19 | 2013-09-30 | Hitachi Chemical Co Ltd | Photosensitive resin composition, photosensitive element, resist pattern forming method, and printed wiring board manufacturing method |
| JP2015072336A (en) * | 2013-10-02 | 2015-04-16 | Jnc株式会社 | Photosensitive composition and display element using the same |
| JP6813398B2 (en) * | 2017-03-10 | 2021-01-13 | 東京応化工業株式会社 | Methods for Forming Photosensitive Compositions, Dry Films, and Patterned Hardened Films |
| JP2018204011A (en) * | 2017-06-08 | 2018-12-27 | Jsr株式会社 | Composition, method for producing cured film and electronic component |
-
2020
- 2020-02-04 WO PCT/JP2020/004182 patent/WO2020162464A1/en active Application Filing
- 2020-02-04 JP JP2020571219A patent/JPWO2020162464A1/en active Pending
- 2020-02-04 KR KR1020217026730A patent/KR20210124281A/en active Search and Examination
- 2020-02-04 CN CN202410290771.2A patent/CN118131567A/en active Pending
- 2020-02-04 TW TW109103400A patent/TW202040272A/en unknown
- 2020-02-04 CN CN202080012460.XA patent/CN113412289B/en active Active
Also Published As
| Publication number | Publication date |
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| JPWO2020162464A1 (en) | 2021-12-02 |
| WO2020162464A1 (en) | 2020-08-13 |
| KR20210124281A (en) | 2021-10-14 |
| CN113412289B (en) | 2024-04-05 |
| CN113412289A (en) | 2021-09-17 |
| TW202040272A (en) | 2020-11-01 |
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