CN107134543B - 阵列基板及制造方法、显示装置 - Google Patents
阵列基板及制造方法、显示装置 Download PDFInfo
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Abstract
本发明公开了一种阵列基板及制造方法、显示装置,方法包括:在衬底基板上依次制备一层叠结构及阳极层;在层叠结构及阳极层上制备具有容置腔及凹陷结构的光阻层;在容置腔内制备有机发光器件;在有机发光器件及光阻层上制备反射阴极层。通过上述方式,本发明能够避免由反射阴极层引起的漏光现象,提升面板显示品质。
Description
技术领域
本发明涉及显示技术领域,特别是涉及一种像阵列基板及制造方法、显示装置。
背景技术
传统的底发射有源矩阵有机发光二极体(Active-matrix organic lightemitting diode,AMOLED)彩色化方法通常是通过有机发光二极管(WOLED,White OrganicLight Emitting Diode)和彩色滤光层(CF,Color Filter)叠加来实现,或者是通过RGB的方式来实现。
其中,由于底发射阴极材料整面蒸镀,且反射率极高,传统的像素设计都会受到阴极反射的影响而产生不同程度的漏光现象,降低了面板的显示品质。
发明内容
本发明提供一种像阵列基板及制造方法、显示装置,能够避免由反射阴极层引起的漏光现象,提升面板显示品质。
为解决上述技术问题,本发明采用的一种技术方案是:提供一种阵列基板的制造方法,所述方法包括:在衬底基板上依次制备一层叠结构及阳极层;在所述层叠结构及阳极层上制备具有容置腔及凹陷结构的光阻层;在所述容置腔内制备有机发光器件;在所述有机发光器件及所述光阻层上制备反射阴极层。
为解决上述技术问题,本发明采用的另一种技术方案是:提供一种阵列基板,所述阵列基板包括:衬底基板;层叠结构,所述层叠结构形成于所述衬底基板上;阳极层,覆盖于所述层叠结构上;光阻层,沉积于所述阳极层及所述层叠结构上,所述光阻层包括容置腔及凹陷结构;有机发光器件,设置于所述容置腔内;反射阴极层,沉积于所述有机发光器件及所述光阻层上。
为解决上述技术问题,本发明采用的又一种技术方案是:提供一种显示装置,所述显示装置包括上述所述的阵列基板。
本发明的有益效果是:区别于现有技术的情况,本发明通过在光阻层上制备凹陷结构,能够将经反射阴极层后的光线反射回发光方向并衰减,避免由反射阴极层引起的漏光现象,提升面板显示品质。
附图说明
图1为本发明阵列基板制造方法一实施例的流程示意图;
图2为图1中步骤S1一实施方式的流程示意图;
图3为图1中步骤S2一实施方式的流程示意图;
图4为图3中步骤S21一实施方式的流程示意图;
图5为图3中步骤S22一实施方式的流程示意图;
图6为图1中步骤S2另一实施方式的流程示意图;
图7为图6中步骤S21a一实施方式的流程示意图;
图8为图6中步骤S22a一实施方式的流程示意图;
图9为本发明阵列基板一实施方式的结构示意图;
图10为本发明阵列基板中层叠结构一实施方式的结构示意图;
图11为本发明阵列基板另一实施方式的结构示意图;
图12为本发明显示装置一实施方式的结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅是本发明的一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1,图1为本发明阵列基板制造方法一实施例的流程示意图,该方法包括如下步骤:
S1,在衬底基板上依次制备一层叠结构及阳极层。
其中,所述衬底基板可以为透明材质,具体可以是玻璃、陶瓷基板或者透明塑料等任意形式的基板,此处本发明不做具体限定。
如图2所示,步骤S1进一步包括如下子步骤:
S11,在衬底基板上制备多个薄膜晶体管。
其中,每一所述薄膜晶体管包括栅极层,栅极绝缘层、源极层及漏极层及半导体氧化物层。
采用在衬底基板上沉积栅极层,经过光刻胶涂覆、曝光、显影、蚀刻以及光刻胶剥离等工艺以形成具有预定图案的栅极层。在所述栅极层形成后可以采用采用化学气相沉积(CVD)及黄光蚀刻工艺在衬底基板上沉积栅极绝缘层(GI),其中该栅极绝缘层可以为氧化硅(SiO2)膜层或氮化硅(SiNx)膜层,或者为氧化硅(SiO2)和氮化硅(SiNx)的叠层,此处本发明不做具体限定。在形成栅极绝缘层后,在所述栅极绝缘层上沉积源极层及漏极层。其中,栅极层、源极层及漏极层可以为钨(Tungsten)、钛(Titanium)、钴(Cobalt)及镍(Nickel)等材料,本发明不做具体限定。形成源极及漏极层后,在所述源极及漏极层及栅极绝缘层上再覆盖一层半导体氧化物层(IGZO),经过光刻胶涂覆、曝光、显影、蚀刻以及光刻胶剥离等工艺以形成具有预定图案的半导体氧化物层。本实施例中采用半导体氧化物层作为沟道材料,在其它实施例中也可以采用其他材料。
S12,在薄膜晶体管上沉积平坦层。
在该半导体氧化物层上依次沉积保护层(PAS)及平坦层(PLN)。在形成平坦层后,采用磁控溅射法在该平坦层上制备阳极层(ITO),其中ITO是一种N类型的宽能隙的半导体,具有高透光率及导电性。当然,本实施例中阵列基板的层叠结构只是简单举例说明,并不局限于此。
S2,在层叠结构及阳极层上制备具有容置腔及凹陷结构的光阻层。
如图3所示,步骤S2进一步包括如下子步骤:
S21,在层叠结构及阳极层上制备具有容置腔及凹陷结构的像素定义层。
如图4所示,步骤S21进一步包括如下子步骤:
S211,在层叠结构及阳极层上沉积像素定义层。
其中,该像素定义层(PDL)为有机光阻层。
S212,对像素定义层进行图形化处理以形成容置腔及凹陷结构。
步骤S212中,采用黄光制程对像素定义层进行图形化处理。其中,黄光制程指对涂覆在基板表面的光敏性物质,经过曝光显影后留下的部分对底层其保护作用,然后进行蚀刻脱膜并最终获得永久性图形的过程。且在步骤S212中,对所述像素定义层采用黄光制程在进行预烘、曝光、显影及固化等操作,使其形成具有容置腔及凹陷结构的像素定义层,且图形化的另一目的使得阳极层暴露出来,所述阳极层位于容置腔结构处。其中,该凹陷结构可以为包括但不限于弧形、圆形等,且每一凹陷结构位于两相邻的容置腔之间。还需要说明的是,该容置腔及凹陷结构的形成无需增加额外的制程,简化了操作进程。
S22,在像素定义层上制备支撑层,其中支撑层不覆盖容置腔及凹陷结构。
如图5所示,步骤S22进一步包括如下子步骤:
S221,在像素定义层上沉积支撑层。
在形成具有容置腔及凹陷结构的像素定义层后,在像素定义层上沉积支撑层(PS),该支撑层也可以为有机光阻层。
S222,对支撑层进行图形化处理以至少暴露容置腔及凹陷结构。
同理,进一步对支撑层进行图形化处理。具体地,采用黄光制程对该支撑层进行预烘、曝光、显影及固化等操作,以使得支撑层至少暴露容置腔及凹陷结构。
在其它实施例中,步骤S2还可以进一步包括如下子步骤:
如图6所示,且该实施例与图3中实施例不同之处在于,图3中实施例中,对像素定义层进行图形化处理时形成容置腔及凹陷结构,在对支撑层进行图形化处理的时候,在与像素定义层对应的凹陷结构处对支撑层采用黄光制程做同样的图形化处理,以使得该凹陷结构暴露出来。而本实施例中,在对像素定义层图形化处理时,仅形成容置腔,在支撑层上采用黄光制程做图形化处理,以形成具有凹陷结构的支撑层。具体描述如下:
S21a,在层叠结构及阳极层上制备具有容置腔的像素定义层。
如图7所示,步骤S21a进一步包括如下子步骤:
S211a,在层叠结构及阳极层上沉积像素定义层。
S212a,对像素定义层进行图形化处理以形成容置腔。
采用黄光制程对像素定义层进行图形化处理,具体包括对像素定义层进行预烘、曝光、显影及固化等操作,使其形成具有容置腔结构的像素定义层。其中,该像素定义层可以为有机光阻层。
S22a,在像素定义层上制备具有凹陷结构的支撑层,其中支撑层不覆盖容置腔。
如图8所示,步骤S22a进一步包括如下子步骤:
S221a,在像素定义层上沉积支撑层。
在形成具有容置腔结构的像素定义层后,在像素定义层上沉积支撑层(PS),该支撑层也可以为有机光阻层。
S222a,对支撑层进行图形化处理以形成凹陷结构及至少暴露容置腔。
具体地,采用黄光制程对在任意相邻两容置腔之间的支撑层进行图形化处理,具体包括对支撑层进行预烘、曝光、显影及固化等操作,使其形成凹陷结构。其中,该凹陷结构可以为包括但不限于弧形、圆形等。本实施例中,该凹陷结构的形成无需增加额外的制程,简化了操作进程。
且上述实施例中的凹陷结构,不仅位于任意两相邻容置腔之间,还位于相邻两个薄膜晶体管之间,需要说明的是该凹陷结构的位置并不需要和相邻容置腔或相邻两个薄膜晶体管同层设置。
S3,在容置腔内制备有机发光器件。
其中,在形成具有容置腔结构的像素定义层上制备有机发光器件,具体的在容置腔内采用蒸镀工艺制备有机发光器件。
S4,在有机发光器件及光阻层上制备反射阴极层。
在形成有机发光器件后,进一步在有机发光器件及光阻层上蒸镀反射阴极层。在形成整面的反射阴极层时,上述的凹陷结构处,会形成一类似凸透镜作用的结构,当然该凹陷结构的形状并不仅局限弧形、圆形,也可以是其它可以对像素区光线传播进行阻挡的形状,本发明不做具体限定。当有机发光器件发出的光线经过具有类似凸透镜作用反射阴极层反射后,会将经反射阴极层后的光线反射回发光方向并衰减,能够有效的避免薄膜晶体管间隙间的漏光现象发生,提升面板显示品质。
上述实施方式中,通过在光阻层上制备凹陷结构,能够将经反射阴极层后的光线反射回发光方向并衰减,避免由反射阴极层引起的漏光现象,提升面板显示品质。
请参阅图9、10及11,图9为本发明阵列基板一实施方式的结构示意图,图10为本发明阵列基板中层叠结构一实施方式的结构示意图,图11为本发明阵列基板另一实施方式的结构示意图。如图9,该阵列基板10包括:衬底基板11、层叠结构12、阳极层13、光阻层14、有机发光器件15及反射阴极层16。
其中,该衬底基板11可以为透明材质,具体可以是玻璃、陶瓷基板或者透明塑料等任意形式的基板,此处本发明不做具体限定。
层叠结构12,形成于衬底基板11上,且该层叠结构进一步包括:多个薄膜晶体管121及平坦层122,具体结构可以参见图10,且本实施例中的所列举的层叠结构仅为示意性举例,并不局限于此,其他类似的变换结构也适用于本发明,此处不做具体限定。
其中,薄膜晶体管121进一步包括:栅极层Gate、栅极绝缘层GI、源极层S及漏极层D及半导体氧化物层IGZO,该半导体氧化物层IGZO覆盖于栅极绝缘层GI及源极层S及漏极层D。
此外,该层叠结构12还包括保护层124,且保护层124覆盖于半导体氧化物层IGZO上。
平坦层122,形成以保护层124上。
阳极层13,覆盖于层叠结构12上,具体地覆盖于层叠结构12中的平坦层122上。
光阻层14,沉积于阳极层13及层叠结构12上,且该光阻层14具体包括:像素定义层141及支撑层142。且该光阻层14进一步包括容置腔A及凹陷结构B。在具体实施例中,该光阻层14的凹陷结构B分为两种情况:1.凹陷结构B位于像素定义层上,2.凹陷结构B位于像素定义层上,具体结构请参见图11,且该凹陷结构的具体制作方法及过程详见上述制备方法中的流程示意图,此处不再赘述。
有机发光器件15,设置于容置腔内A内。
反射阴极层16,沉积于有机发光器件15及光阻层14上。
上述实施方式中,通过在光阻层上制备凹陷结构,能够将经反射阴极层后的光线反射回发光方向并衰减,避免由反射阴极层引起的漏光现象,提升面板显示品质。
请参阅图12,图12为本发明显示装置一实施方式的结构示意图,该显示装置30包括上述任意结构的阵列基板C,且该阵列基板C的具体实施方法参见上述各实施方式,此处不再赘述。
综上所述,本领域技术人员容易理解,本发明提供一种像阵列基板及制造方法、显示装置,通过在光阻层上制备凹陷结构,能够将经反射阴极层后的光线反射回发光方向并衰减,避免由反射阴极层引起的漏光现象,提升面板显示品质。
以上仅为本发明的实施方式,并非因此限制本发明的专利范围,凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (6)
1.一种阵列基板的制造方法,其特征在于,所述方法包括:
在衬底基板上依次制备一层叠结构及阳极层;
在所述层叠结构及阳极层上制备具有容置腔及凹陷结构的光阻层,包括:
在所述层叠结构及阳极层上沉积像素定义层;
对所述像素定义层进行图形化处理以形成所述容置腔及凹陷结构;
在所述像素定义层上沉积支撑层;
对所述支撑层进行图形化处理以至少暴露所述容置腔及凹陷结构,其中所述支撑层不覆盖所述容置腔及凹陷结构;
或
在所述层叠结构及阳极层上沉积像素定义层;
对所述像素定义层进行图形化处理以形成所述容置腔;
在所述像素定义层上沉积支撑层;
对所述支撑层进行图形化处理以形成所述凹陷结构及至少暴露所述容置腔,其中所述支撑层不覆盖所述容置腔;
在所述容置腔内制备有机发光器件;
在所述有机发光器件及所述光阻层上制备反射阴极层。
2.根据权利要求1所述的制造方法,其特征在于,每一所述凹陷结构位于相邻两所述容置腔之间。
3.根据权利要求1所述的制造方法,其特征在于,所述在衬底基板上依次制备一层叠结构,包括:
在所述衬底基板上制备多个薄膜晶体管;
在所述薄膜晶体管上沉积平坦层。
4.根据权利要求3所述的制造方法,其特征在于,每个所述凹陷结构位于相邻两个所述薄膜晶体管之间。
5.一种阵列基板,其特征在于,所述阵列基板包括:
衬底基板;
层叠结构,所述层叠结构形成于所述衬底基板上;
阳极层,覆盖于所述层叠结构上;
光阻层,沉积于所述阳极层及所述层叠结构上,所述光阻层包括容置腔及凹陷结构,所述光阻层包括沉积于所述层叠结构及阳极层上的像素定义层及支撑层;
其中,所述像素定义层上设置有容置腔及凹陷结构,所述支撑层沉积于所述像素定义层上且不覆盖所述容置腔及凹陷结构;
或
所述像素定义层上设置有所述容置腔,所述支撑层上设置有凹陷结构且所述支撑层不覆盖所述容置腔;
有机发光器件,设置于所述容置腔内;
反射阴极层,沉积于所述有机发光器件及所述光阻层上。
6.一种显示装置,其特征在于,所述显示装置包括权利要求5所述的阵列基板。
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CN107731883A (zh) * | 2017-11-17 | 2018-02-23 | 深圳市华星光电半导体显示技术有限公司 | Oled显示器及其制作方法 |
CN108807494B (zh) | 2018-07-06 | 2021-09-14 | 云谷(固安)科技有限公司 | 显示基板及其制作方法、显示面板和显示装置 |
CN109166882B (zh) * | 2018-08-01 | 2020-07-24 | 云谷(固安)科技有限公司 | 显示面板及其形成方法、显示装置 |
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