WO2019052002A1 - 一种彩膜基板及显示设备 - Google Patents

一种彩膜基板及显示设备 Download PDF

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WO2019052002A1
WO2019052002A1 PCT/CN2017/112444 CN2017112444W WO2019052002A1 WO 2019052002 A1 WO2019052002 A1 WO 2019052002A1 CN 2017112444 W CN2017112444 W CN 2017112444W WO 2019052002 A1 WO2019052002 A1 WO 2019052002A1
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light
wavelength
sub
pixel region
material layer
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PCT/CN2017/112444
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English (en)
French (fr)
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史文
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深圳市华星光电半导体显示技术有限公司
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Priority to US15/739,770 priority Critical patent/US10403686B2/en
Publication of WO2019052002A1 publication Critical patent/WO2019052002A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of flat display technologies, and in particular, to a color film substrate and a display device.
  • the flat display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing active light emitting display panel includes an Organic Light Emitting Display (OLED) and a Quantum Dot Light Emitting Diodes (QLED), which has a liquid crystal display (LCD) compared with a liquid crystal display (LCD). Self-illumination, wide viewing angle, low power consumption, high reaction speed, etc., are widely used.
  • the inventor of the present application found in the long-term research and development that in the prior art, two methods are mainly used to realize color display, one of which is an RGB sub-pixel to realize color display, and the manufacturing method is a high-precision metal mask (Fine Metal Mask, FMM).
  • FMM Full Metal Mask
  • Etc. evaporation or printing process evaporation method is costly and difficult to achieve large-area production, printing process is difficult to achieve high resolution;
  • another method is the light source plus color film, such as blue OLED, blue QLED and photoluminescence CF combination can achieve better color gamut and higher light source utilization, but blue OLED and blue QLED have lower performance and shorter service life.
  • the technical problem to be solved by the present invention is to provide a color film substrate and a display device. By the above manner, the performance and the service life of the display panel can be improved.
  • a technical solution adopted by the present invention is to provide a method for fabricating a color film substrate, comprising: providing a black matrix on a substrate, and forming a plurality of open regions arranged in a matrix manner; a sub-pixel region as a color filter substrate; a photoluminescence quantum dot film that down-converts red light is formed in an open region of a black matrix of a red sub-pixel region corresponding to the sub-pixel region; and a blue sub-pixel corresponding to the sub-pixel region An open region of the black matrix of the region is formed, and an up-converting nanoparticle film emitting blue light is formed; and the substrate and the black matrix are packaged to form a color film panel.
  • a technical solution adopted by the present invention is to provide a color filter substrate, the color film substrate includes: a substrate; a black matrix disposed on the substrate and formed in a matrix manner a plurality of open regions arranged to serve as a sub-pixel region of the color filter substrate; a first conversion material layer disposed in the first sub-pixel region in the sub-pixel region, the first conversion material layer being used to have the first wavelength
  • the incident light wavelength is converted into a first outgoing light having a second wavelength, wherein the first wavelength is greater than the second wavelength.
  • another technical solution adopted by the present invention is to provide a display device including the color filter substrate of any of the above.
  • the invention has the beneficial effects that a plurality of open regions in which the black matrix is arranged in a matrix manner are used as sub-pixel regions of the color filter substrate, and the first conversion material layer is disposed in the first sub-pixel region, and the first wavelength is longer.
  • the incident light of the wavelength passes through the first conversion material layer and is converted into the outgoing light of a shorter wavelength to realize the color display of the display panel and improve the performance and the service life of the display panel.
  • FIG. 1 is a schematic structural view of an embodiment of a color filter substrate of the present invention
  • Figure 2 is a top plan view of Figure 1;
  • FIG. 3 is a schematic structural view of another embodiment of a color filter substrate of the present invention.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating a color filter substrate according to the present invention.
  • FIG. 5 is a schematic flow chart of another embodiment of a method for fabricating a color filter substrate according to the present invention.
  • FIG. 6 is a schematic structural view of an embodiment of a display device of the present invention.
  • FIG. 1 is a schematic structural view of an embodiment of a color filter substrate according to the present invention.
  • the color filter substrate includes a base substrate 10, a black matrix 11 and a first conversion material layer 12.
  • the black matrix 11 is disposed on the base substrate 10 and is formed with a plurality of open regions arranged in a matrix manner to serve as the sub-pixel regions 13 of the color filter substrate.
  • the color filter substrate includes three sub-pixel regions 13a, 13b, and 13c.
  • the black matrix 11 is mainly for preventing light leakage between pixels, and increasing the contrast of colors.
  • materials used can be classified into two kinds of metal thin films or resin types, such as an oxide film or a black photoresist film.
  • FIG. 2 is a schematic plan view of FIG.
  • the black matrix 11 is disposed on the base substrate and is formed with a plurality of opening regions A/B/C arranged in a matrix manner to serve as the sub-pixel regions 13 of the color filter substrate.
  • the first conversion material layer 12 is disposed in the first sub-pixel region in the sub-pixel region 13 In 13a, the first conversion material layer 12 is for converting the incident light A1 having the first wavelength into the first outgoing light B1 having the second wavelength, wherein the first wavelength is greater than the second wavelength.
  • the incident light A1 of the first wavelength may be red light
  • the first conversion material layer 12 may be an up-converting nanoparticle having an inorganic matrix and rare earth doping ions
  • the first outgoing light B1 having the second wavelength may be green.
  • up-converting nanoparticles can convert incident red light into green or blue light by up-converting nanoparticles, wherein the wavelength of red light is greater than the wavelength of green or blue light.
  • the incident light A1 of the first wavelength may be green light
  • the first conversion material layer 12 may be an up-converting nanoparticle having an inorganic matrix and rare earth doped ions
  • the first outgoing light B1 having the second wavelength may be blue light.
  • the up-converting nanoparticles can convert the incident green light into blue light through the up-converting nano-particles, wherein the wavelength of the green light is greater than the wavelength of the blue light.
  • the color filter substrate further includes a second conversion material layer 14, the second conversion material layer 14 is disposed in the second sub-pixel region 13b in the sub-pixel region 13, and the second conversion material layer 14 is used.
  • the wavelength of the incident light A1 is converted into a second outgoing light C1 having a third wavelength, wherein the first wavelength is greater than the third wavelength.
  • At least one of the first conversion material layer 12 and the second conversion material layer 14 is an up-conversion nanoparticle comprising an inorganic matrix and rare earth doping ions.
  • the incident light having a longer wavelength can be excited to emit light having a shorter wavelength, for example, red light excites green light or blue light, green light excites blue light, and the like.
  • the upconverting nanoparticles are typically composed of an inorganic matrix and rare earth doped ions embedded therein.
  • the up-conversion process mainly depends on the stepped energy level of the doped rare earth ions.
  • the crystal structure and optical properties of the matrix also play an important role in improving the up-conversion efficiency, so the selection of the matrix is crucial.
  • the difference in the crystal structure of the matrix also causes a change in the crystal field around the activated ions, causing a change in the optical properties of the nanoparticles. Therefore, in the present embodiment, a high quality substrate having a good light transmittance in a specific wavelength range is selected.
  • Inorganic matrices include, but are not limited to, halides, oxides, sulfides, and sulfur oxides.
  • the rare earth doped ions include, but are not limited to, Er 3+ , Ho 3+ , Tm 3+ , Pr 3+ , Nd 3+ or Yb 3+ , and the like.
  • the incident light A1 is red light
  • the first outgoing light B1 and the second outgoing light C1 are blue light and green light, respectively
  • the third sub-pixel region 13c in the sub-pixel region is disposed to at least partially transmit incident light, As the third outgoing light D1.
  • the incident light A1 having the first wavelength is red light
  • the first outgoing light B1 having the second wavelength is blue light
  • the second outgoing light C1 having the third wavelength is green light
  • the wavelength of red light is greater than the wavelength of blue light or green light.
  • the first conversion material layer 12 and the second conversion material layer 14 are both up-conversion nanoparticles including an inorganic matrix and rare earth doping ions, and are disposed in the first sub-pixel region 13a and the second sub-pixel region 13b, respectively.
  • the first sub-pixel region 13a is a blue sub-pixel region, and is provided with up-converting nanoparticles that emit blue light
  • the second sub-pixel region 13b is a green sub-pixel region, and is provided with up-converting nanometers that emit green light
  • the third sub-pixel region 13c is a red sub-pixel region and is a transparent light-transmissive region. When the red illuminator on the illuminating panel emits red light having a wavelength of ⁇ 1 , the red light excites the blue sub-pixel on the color filter panel.
  • the up-converting nanoparticles on the region emit blue light having a wavelength of ⁇ 2
  • the up-converting nanoparticles on the green sub-pixel region on the red light-activated color filter panel emit green light having a wavelength of ⁇ 3
  • red The red light transmitted through the sub-pixel area realizes full color display.
  • the wavelength ⁇ 1 of the red light is greater than the wavelength ⁇ 3 of the green light and the wavelength ⁇ 2 of the blue light.
  • a high-performance, long-life red OLED or QLED is used as an active light-emitting unit, and at the same time, the up-converting nanoparticles are combined, and the green light/blue light up-converting nanoparticles are excited by the red light OLED or QLED to realize full color display, thereby improving Display panel life.
  • FIG. 3 is a schematic structural view of another embodiment of a color filter substrate of the present invention.
  • the color filter substrate further includes a second conversion material layer 24 disposed in the second sub-pixel region 23b in the sub-pixel region, and the second conversion material layer is configured to convert the incident light A2 wavelength into having the third The second outgoing light C2 of the wavelength, wherein the first wavelength is less than the third wavelength.
  • the first conversion material layer 22 is an up-converting nanoparticle containing an inorganic matrix and rare earth doping ions
  • the second conversion material layer 24 is a down-converting quantum dot material.
  • the down-converting quantum dot material can excite incident light of a shorter wavelength to emit light of a longer wavelength, for example, green light excites red light.
  • the incident light A2 is green light
  • the first outgoing light B2 and the second outgoing light C2 are blue light and red light, respectively
  • the third sub-pixel area 23c in the sub-pixel region is disposed to at least partially transmit incident light to As the third outgoing light D2.
  • the incident light A2 having the first wavelength is green light
  • the first outgoing light B2 having the second wavelength is blue light
  • the second outgoing light C2 having the third wavelength is red light
  • the third outgoing light D2 For green light.
  • the wavelength of the green light is greater than the wavelength of the blue light
  • the wavelength of the green light is smaller than the wavelength of the red light.
  • the first conversion material layer 22 is an up-converting nanoparticle containing an inorganic matrix and a rare earth doping ion, and is disposed in the first sub-pixel region 23a in the sub-pixel region
  • the second conversion material layer 24 is a down-converting quantum dot material. It is disposed in the second sub-pixel region 23b in the sub-pixel region.
  • the first sub-pixel region 23a is a blue sub-pixel region, and is provided with up-converting nanoparticles that emit blue light
  • the second sub-pixel region 23b is a red sub-pixel region, and is provided with light that converts red light.
  • the third sub-pixel region 23c is a green sub-pixel region, and is set as a transparent transparent region.
  • the down-converted quantum dot material on the red sub-pixel region emits red light having a wavelength of ⁇ 3
  • the up-converting nanoparticles on the blue sub-pixel region on the green light-activated color filter panel emit blue light having a wavelength of ⁇ 2 .
  • Full color display is achieved in combination with green light transmitted from the green sub-pixel area.
  • the wavelength ⁇ 1 of the green light is greater than the wavelength ⁇ 2 of the blue light and smaller than the wavelength ⁇ 3 of the red light.
  • a high-performance, long-life green OLED or QLED is used as an active light-emitting unit, and a photoluminescence quantum dot material and an up-converting nano-particle which are down-converted with red light are simultaneously combined, and red light is excited by a green OLED or QLED.
  • Photoluminescence quantum dot materials, as well as blue upconversion nanoparticles, enable full color display to increase the life of the display panel.
  • FIG. 4 is a schematic flow chart of an embodiment of a method for fabricating a color filter substrate according to the present invention.
  • a method for fabricating a color filter substrate includes the following steps:
  • a black matrix is disposed on a substrate, and a plurality of open regions arranged in a matrix manner are formed to serve as a sub-pixel region of the color filter substrate;
  • FIG. 5 is a schematic flow chart of another embodiment of a method for fabricating a color filter substrate according to the present invention.
  • a method for fabricating a color filter substrate includes the following steps:
  • a black matrix is disposed on a substrate, and a plurality of open regions arranged in a matrix manner are formed to serve as a sub-pixel region of the color filter substrate;
  • the present invention further includes a display device, as shown in FIG. 6, the display device 60 includes the color film substrate 61 of any of the above structures, or the color filter substrate 61 prepared by any of the above methods, and the specific method is as described in the above embodiments. The above method can be used to form the color film substrate shown in FIG. 1 or FIG. 3, and details are not described herein again. Further, the display device 60 further includes an active light emitting array substrate 62 that includes a plurality of light emitting regions 63 that are disposed corresponding to the sub-pixel regions 64 to respectively provide incident light to the sub-pixel regions 64.
  • the array substrate 62 in FIG. 6 may further be provided with a reflective electrode (not shown), a light-emitting component located in the light-emitting region 63 above the reflective electrode, and an encapsulation layer, wherein the light-emitting component can be
  • the green or red OLED/QLED active light emitting unit described above may be a package cover or a TFE package layer.

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Abstract

一种彩膜基板及显示设备。彩膜基板包括：衬底基板（10）；黑矩阵（11），设置于衬底基板（10）上并形成有以矩阵方式间隔排列的多个开口区域，以作为彩膜基板的子像素区域（13）；第一转换材料层（12），设置于子像素区域（13）中的第一子像素区域（13a）内，第一转换材料层（12）用于将具有第一波长的入射光（A1）波长转换成具有第二波长的第一出射光（B1），其中第一波长大于第二波长。通过上述方式，可以提高显示面板的性能及使用寿命。

Description

一种彩膜基板及显示设备 【技术领域】
本发明涉及平面显示技术领域，特别是涉及一种彩膜基板及显示设备。
【背景技术】
平面显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的主动发光显示面板包括有机发光二极管显示器(Organic Light Emitting Display，OLED)，及量子点发光二极管显示器(Quantum Dot Light Emitting Diodes，QLED)，与液晶显示器(Liquid Crystal Display，LCD)相比具有自发光、广视角、低功耗、反应速度高等优点，被广泛使用。
本申请的发明人在长期的研发中发现，现有技术中，主要使用两种方法实现彩色显示，其中一个是RGB子像素实现彩色显示，制作方法为高精度金属掩模板(Fine Metal Mask，FMM)等蒸镀或印刷工艺，蒸镀方式成本较高且难以实现大面积生产，印刷工艺难以实现高分辨率；另一种方法是发光源加彩膜，如蓝光OLED、蓝光QLED与光致发光CF结合，可以实现较好的色域以及较高的光源利用率，但是蓝光OLED及蓝光QLED的性能较低且使用寿命较短。
【发明内容】
本发明主要解决的技术问题是提供一种彩膜基板及显示设备，通过上述方式，可以提高显示面板的性能及使用寿命。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种彩膜基板制作方法，包括：在一衬底基板上设置黑矩阵，并形成有以矩阵方式间隔排列的多个开口区域，以作为彩膜基板的子像素区域；在子像素区域对应的红色子像素区域的黑矩阵的开口区，制作下转换红光的光致发光量子点薄膜；在子像素区域对应的蓝色子像素区域的黑矩阵的开口区，制作发射蓝光的上转换纳米颗粒薄膜；对衬底基板及黑矩阵进行封装，形成彩膜面板。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种彩膜基板，彩膜基板包括：衬底基板；黑矩阵，设置于衬底基板上并形成有以矩阵方式间 隔排列的多个开口区域，以作为彩膜基板的子像素区域；第一转换材料层，设置于子像素区域中的第一子像素区域内，第一转换材料层用于将具有第一波长的入射光波长转换成具有第二波长的第一出射光，其中第一波长大于第二波长。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种显示设备，显示设备包括上述任一项的彩膜基板。
本发明的有益效果是：将黑矩阵以矩阵方式间隔排列的多个开口区域作为彩膜基板的子像素区域，并在第一子像素区域内设置第一转换材料层，波长较长的第一波长的入射光通过第一转换材料层，被转换为波长较短的出射光，以实现显示面板的彩色显示，并提高显示面板的性能及使用寿命。
【附图说明】
图1是本发明彩膜基板一实施方式的结构示意图；
图2是图1的俯视结构示意图；
图3是本发明彩膜基板另一实施方式的结构示意图；
图4是本发明彩膜基板制作方法一实施方式的流程示意图；
图5是本发明彩膜基板制作方法另一实施方式的流程示意图；
图6是本发明显示设备一实施方式的结构示意图。
【具体实施方式】
下面结合附图和实施方式对本发明进行详细说明。
请参阅图1，图1是本发明彩膜基板一实施方式的结构示意图，如图1所示，彩膜基板包括：衬底基板10、黑矩阵11及第一转换材料层12。
黑矩阵11设置于衬底基板10上并形成有以矩阵方式间隔排列的多个开口区域，以作为彩膜基板的子像素区域13。如图1所示，彩膜基板包括三个子像素区域13a、13b以及13c。其中，黑矩阵11主要是为了防止各像素之间漏光，以及增加色彩的对比性，目前使用的材料可分为两种金属薄膜或树脂型，例如氧化膜或黑色光阻薄膜。如图2所示，图2是图1的俯视结构示意图。黑矩阵11设置于衬底基板上并形成有以矩阵方式间隔排列的多个开口区域A/B/C，以作为彩膜基板的子像素区域13。
进一步地，第一转换材料层12设置于子像素区域13中的第一子像素区域 13a内，第一转换材料层12用于将具有第一波长的入射光A1波长转换成具有第二波长的第一出射光B1，其中第一波长大于第二波长。
具体的，第一波长的入射光A1可以为红光，第一转换材料层12可以为有无机基质及稀土掺杂离子的上转换纳米颗粒，具有第二波长的第一出射光B1可以为绿光或者蓝光，上转换纳米颗粒可以将入射的红光通过上转换纳米颗粒转换成绿光或者蓝光，其中，红光的波长大于绿光或者蓝光的波长。
又或者，第一波长的入射光A1可以为绿光，第一转换材料层12可以为有无机基质及稀土掺杂离子的上转换纳米颗粒，具有第二波长的第一出射光B1可以为蓝光，上转换纳米颗粒可以将入射的绿光通过上转换纳米颗粒转换成蓝光，其中，绿光的波长大于蓝光的波长。
通过上述方法，可使用高性能且波长较长的入射光为主动发光单元，同时结合特殊的转换材料以实现全彩显示，以提高显示面板的性能及使用寿命。
进一步地，如图1所示，彩膜基板还包括第二转换材料层14，第二转换材料层14设置于子像素区域13中的第二子像素区域13b内，第二转换材料层14用于将入射光A1波长转换成具有第三波长的第二出射光C1，其中第一波长大于第三波长。
可选的，第一转换材料层12和第二转换材料层14中的至少一者为包含有无机基质及稀土掺杂离子的上转换纳米颗粒。
在本实施例中，通过上转换纳米颗粒，可以将波长较长的入射光激发出波长较短的出射光，例如红光激发出绿光或蓝光、绿光激发出蓝光等。
上转换纳米颗粒通常由无机基质及镶嵌在其中的稀土掺杂离子组成。其中，上转换过程的发生主要依赖于掺杂的稀土离子的阶梯状能级，同时，基质的晶体结构和光学性质在提高上转换效率方面也起到重要作用，因而基质的选择至关重要，基质晶体结构的不同也会导致激活离子周围的晶体场的变化，从而引起纳米颗粒光学性质的变化。因此，在本实施例中，会选择对于特定波长范围内有较好透光性的优质的基质。无机基质包括但不限于卤化物、氧化物、硫化物以及硫氧化物。稀土掺杂离子包括但不限于Er3+、Ho3+、Tm3+、Pr3+、Nd3+或Yb3+等。
可选的，上述入射光A1为红光，第一出射光B1和第二出射光C1分别为蓝光和绿光；子像素区域中的第三子像素区域13c设置为至少部分透射入射光，以作为第三出射光D1。
在本实施例中，具有第一波长的入射光A1为红光，具有第二波长的第一出射光B1为蓝光，具有第三波长的第二出射光C1为绿光，第三出射光D1为红光。其中，红光的波长大于蓝光或绿光的波长。第一转换材料层12和第二转换材料层14均为包含有无机基质及稀土掺杂离子的上转换纳米颗粒，分别设置于第一子像素区域13a及第二子像素区域13b内。
在一个应用场景中，第一子像素区域13a为蓝色子像素区域，设有发射蓝光的上转换纳米颗粒，第二子像素区域13b为绿色子像素区域，设有发射绿光的上转换纳米颗粒，第三子像素区域13c为红色子像素区域，设为透明透光区，当发光面板上的红色发光器发出波长为λ1的红光时，红光激发彩膜面板上蓝色子像素区域上的上转换纳米颗粒发射出波长为λ2的蓝光，同时，红光激发彩膜面板上绿色子像素区域上的上转换纳米颗粒发射出波长为λ3的绿光，同时，结合从红色子像素区域透过的红光实现全彩显示。其中，红光的波长λ1大于绿光波长λ3及蓝光的波长λ2。
通过上述方法，使用高性能、寿命长的红光OLED或QLED为主动发光单元，同时结合上转换纳米颗粒，通过红光OLED或QLED激发绿光/蓝光上转换纳米颗粒实现全彩显示，以提高显示面板的使用寿命。
参考图3，图3是本发明彩膜基板另一实施方式的结构示意图。彩膜基板进一步包括第二转换材料层24，第二转换材料层24设置于子像素区域中的第二子像素区域23b内，第二转换材料层用于将入射光A2波长转换成具有第三波长的第二出射光C2，其中第一波长小于第三波长。
可选的，第一转换材料层22为包含有无机基质及稀土掺杂离子的上转换纳米颗粒，第二转换材料层24为下转换量子点材料。下转换量子点材料可以将波长较短的入射光激发出波长较长的出射光，例如绿光激发出红光。
可选的，上述入射光A2为绿光，第一出射光B2和第二出射光C2分别为蓝光和红光；子像素区域中的第三子像素区域23c设置为至少部分透射入射光，以作为第三出射光D2。
在本实施例中，具有第一波长的入射光A2为绿光，具有第二波长的第一出射光B2为蓝光，具有第三波长的第二出射光C2为红光，第三出射光D2为绿光。其中，绿光的波长大于蓝光的波长，同时，绿光的波长小于红光的波长。第一转换材料层22为包含有无机基质及稀土掺杂离子的上转换纳米颗粒，设置于子像素区域中的第一子像素区域23a内，第二转换材料层24为下转换量子点材料， 设置于子像素区域中的第二子像素区域23b内。
在另一个应用场景中，第一子像素区域23a为蓝色子像素区域，设有发射蓝光的上转换纳米颗粒，第二子像素区域23b为红色子像素区域，设有下转换红光的光致发光量子点材料，第三子像素区域23c为绿色子像素区域，设为透明透光区，当发光面板上的绿色发光器发出波长为λ1的绿光时，绿光激发彩膜面板上红色子像素区域上的下转换量子点材料发射出波长为λ3的红光，同时，绿光激发彩膜面板上蓝色子像素区域上的上转换纳米颗粒发射出波长为λ2的蓝光，结合从绿色子像素区域透过的绿光实现全彩显示。其中，绿光的波长λ1大于蓝光的波长λ2，且小于红光的波长λ3。
通过上述方法，使用高性能、寿命长的绿光OLED或QLED为主动发光单元，同时结合下转换红光的光致发光量子点材料以及上转换纳米颗粒，通过绿光OLED或QLED激发红光的光致发光量子点材料，以及蓝光上转换纳米颗粒实现全彩显示，以提高显示面板的使用寿命。
参考图4，图4是本发明彩膜基板制作方法一实施方式的流程示意图，在本实施例中，彩膜基板的制作方法包括以下步骤：
S40：在一衬底基板上设置黑矩阵，并形成有以矩阵方式间隔排列的多个开口区域，以作为彩膜基板的子像素区域；
S41：在绿色子像素区域对应的黑矩阵的开口区制作发射绿光的上转换纳米颗粒薄膜；
S42：在蓝色子像素区域对应的黑矩阵的开口区制作发射蓝光的上转换纳米颗粒薄膜；
S43：对整个彩膜进行封装，形成彩膜面板。
参考图5，图5是本发明彩膜基板制作方法另一实施方式的流程示意图，在本实施例中，彩膜基板的制作方法包括以下步骤：
S50：在一衬底基板上设置黑矩阵，并形成有以矩阵方式间隔排列的多个开口区域，以作为彩膜基板的子像素区域；
S51：在红色子像素区域对应的黑矩阵的开口区制作下转换红光的光致发光量子点薄膜；
S52：在蓝色子像素区域对应的黑矩阵的开口区制作发射蓝光的上转换纳米颗粒薄膜；
S53：对整个彩膜进行封装，形成彩膜面板。
本发明还包括一种显示设备，如图6所示，该显示设备60包括上述任意结构的彩膜基板61，或者由上述任意一方法所制备的彩膜基板61，具体方法如上述各实施方式，上述方法可用于制作形成图1或图3所示的彩膜基板，在此处不再赘述。进一步地，显示设备60还包括主动发光阵列基板62，主动发光阵列基板62包括多个发光区域63，发光区域63与子像素区域64对应设置，以分别向子像素区域64提供入射光。
具体来说，图6中的阵列基板62上还可设有反射电极(图中未示出)、位于反射电极上方发光区域63内的发光元器件以及封装层，其中的发光元器件可以使如前所述的绿色或红色的OLED/QLED主动发光单元，封装层可以是封装盖板或TFE封装层。
以上所述仅为本发明的实施方式，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (20)

  1. 一种彩膜基板制作方法，其中，所述方法包括：
    在一衬底基板上设置黑矩阵，并形成有以矩阵方式间隔排列的多个开口区域，以作为所述彩膜基板的子像素区域；
    在所述子像素区域对应的红色子像素区域的黑矩阵的开口区，制作下转换红光的光致发光量子点薄膜；
    在所述子像素区域对应的蓝色子像素区域的黑矩阵的开口区，制作发射蓝光的上转换纳米颗粒薄膜；
    对所述衬底基板及黑矩阵进行封装，形成所述彩膜面板。
  2. 根据权利要求1所述的方法，其中，
    所述上转换纳米颗粒包含有无机基质及稀土掺杂离子，可以将波长较长的入射光激发出波长较短的出射光；
    所述下转换红光的光致发光量子点薄膜为下转换量子点材料，可以将波长较短的入射光激发出波长较长的出射光。
  3. 根据权利要求2所述的方法，其中，所述入射光为绿光，所述出射光分别为蓝光和绿光。
  4. 根据权利要求3所述的方法，其中，所述方法还包括：
    在绿色子像素区域对应的黑矩阵的开口区制作至少部分透射所述入射光的薄膜，可以将所述入射光部分射出。
  5. 一种彩膜基板，其中，所述彩膜基板包括：
    衬底基板；
    黑矩阵，设置于所述衬底基板上并形成有以矩阵方式间隔排列的多个开口区域，以作为所述彩膜基板的子像素区域；
    第一转换材料层，设置于所述子像素区域中的第一子像素区域内，所述第一转换材料层用于将具有第一波长的入射光波长转换成具有第二波长的第一出射光，其中所述第一波长大于所述第二波长。
  6. 根据权利要求5所述的彩膜基板，其中，所述彩膜基板进一步包括第二转换材料层，所述第二转换材料层设置于所述子像素区域中的第二子像素区域内，所述第二转换材料层用于将所述入射光波长转换成具有第三波长的第二出 射光，其中所述第一波长大于所述第三波长。
  7. 根据权利要求6所述的彩膜基板，其中，所述入射光为红光，所述第一出射光和所述第二出射光分别为蓝光和绿光。
  8. 根据权利要求6所述的彩膜基板，其中，所述第一转换材料层和所述第二转换材料层中的至少一者为包含有无机基质及稀土掺杂离子的上转换纳米颗粒。
  9. 根据权利要求5所述的彩膜基板，其中，所述彩膜基板进一步包括第二转换材料层，所述第二转换材料层设置于所述子像素区域中的第二子像素区域内，所述第二转换材料层用于将所述入射光波长转换成具有第三波长的第二出射光，其中所述第一波长小于所述第三波长。
  10. 根据权利要求9所述的彩膜基板，其中，所述入射光为绿光，所述第一出射光和所述第二出射光分别为蓝光和红光。
  11. 根据权利要求9所述的彩膜基板，其中，所述第一转换材料层为包含有无机基质及稀土掺杂离子的上转换纳米颗粒，所述第二转换材料层为下转换量子点材料。
  12. 根据权利要求11所述的彩膜基板，其中，所述子像素区域中的第三子像素区域设置为至少部分透射所述入射光，以作为第三出射光。
  13. 一种显示设备，其中，所述显示设备包括彩膜基板，所述彩膜基板包括：
    衬底基板；
    黑矩阵，设置于所述衬底基板上并形成有以矩阵方式间隔排列的多个开口区域，以作为所述彩膜基板的子像素区域；
    第一转换材料层，设置于所述子像素区域中的第一子像素区域内，所述第一转换材料层用于将具有第一波长的入射光波长转换成具有第二波长的第一出射光，其中所述第一波长大于所述第二波长
  14. 根据权利要求13所述的彩膜基板，其中，所述彩膜基板进一步包括第二转换材料层，所述第二转换材料层设置于所述子像素区域中的第二子像素区域内，所述第二转换材料层用于将所述入射光波长转换成具有第三波长的第二出射光，其中所述第一波长大于所述第三波长。
  15. 根据权利要求13所述的彩膜基板，其中，所述入射光为红光，所述第一出射光和所述第二出射光分别为蓝光和绿光。
  16. 根据权利要求14所述的彩膜基板，其中，所述第一转换材料层和所述第二转换材料层中的至少一者为包含有无机基质及稀土掺杂离子的上转换纳米颗粒。
  17. 根据权利要求14所述的彩膜基板，其中，所述彩膜基板进一步包括第二转换材料层，所述第二转换材料层设置于所述子像素区域中的第二子像素区域内，所述第二转换材料层用于将所述入射光波长转换成具有第三波长的第二出射光，其中所述第一波长小于所述第三波长。
  18. 根据权利要求17所述的彩膜基板，其中，所述入射光为绿光，所述第一出射光和所述第二出射光分别为蓝光和红光。
  19. 根据权利要求17所述的彩膜基板，其中，所述第一转换材料层为包含有无机基质及稀土掺杂离子的上转换纳米颗粒，所述第二转换材料层为下转换量子点材料。
  20. 根据权利要求19所述的显示设备，其中，所述显示设备包括主动发光阵列基板，所述主动发光阵列基板包括多个发光区域，所述发光区域与所述子像素区域对应设置，以分别向所述子像素区域提供所述入射光。
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