JP2010525555A - 発光素子のアレイ - Google Patents
発光素子のアレイ Download PDFInfo
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- JP2010525555A JP2010525555A JP2009552799A JP2009552799A JP2010525555A JP 2010525555 A JP2010525555 A JP 2010525555A JP 2009552799 A JP2009552799 A JP 2009552799A JP 2009552799 A JP2009552799 A JP 2009552799A JP 2010525555 A JP2010525555 A JP 2010525555A
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- Prior art keywords
- light emitting
- light
- wavelength
- electroluminescent device
- emitting system
- Prior art date
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
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- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/18—Combination of light sources of different types or shapes
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- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
- F21S41/43—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades characterised by the shape thereof
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/60—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution
- F21S41/65—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources
- F21S41/663—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources by switching light sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/28—Materials of the light emitting region containing only elements of Group II and Group VI of the Periodic Table
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- H—ELECTRICITY
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/20—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
- F21S41/25—Projection lenses
- F21S41/255—Lenses with a front view of circular or truncated circular outline
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- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/60—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution
- F21S41/63—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates
- F21S41/64—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices
- F21S41/645—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on refractors, filters or transparent cover plates by changing their light transmissivity, e.g. by liquid crystal or electrochromic devices by electro-optic means, e.g. liquid crystal or electrochromic devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
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- F21Y2105/00—Planar light sources
- F21Y2105/10—Planar light sources comprising a two-dimensional array of point-like light-generating elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Abstract
【選択図】図2
Description
205 共通基板
210、211、212 発光素子
220、221、222 エレクトロルミネセントデバイス
231 スイッチング回路
240、241、242 光変換素子
251 第1の電極
252 p型半導体層
254 活性層
256 n型層
258 第2の電極
270 光抽出器
290、291、292 光
Claims (55)
- 光放出システムであって、
2つ以上のモノリシック集積化発光素子を含んでおり、前記2つ以上の発光素子における各発光素子は、エレクトロルミネセントデバイスと前記エレクトロルミネセントデバイスを駆動する専用のスイッチング回路とを含んでおり、
前記2つ以上の発光素子における少なくとも1つの発光素子は、前記発光素子内の前記エレクトロルミネセントデバイスによって放出された光を下方変換するポテンシャル井戸を含む、光放出システム。 - 前記スイッチング回路が、少なくとも1つのトランジスタを含む、請求項1に記載の光放出システム。
- 前記スイッチング回路が、少なくとも1つのコンデンサを含む、請求項1に記載の光放出システム。
- 前記スイッチング回路が、前記エレクトロルミネセントデバイスを流れる電流を制御するドライブ・トランジスタと、前記ドライブ・トランジスタのゲート電極のところの電圧を制御するスイッチ・トランジスタとを含む、請求項1に記載の光放出システム。
- 前記2つ以上のモノリシック集積化発光素子内の前記エレクトロルミネセントデバイスが、モノリシック集積化されている、請求項1に記載の光放出システム。
- 前記2つ以上の発光素子における各発光素子内の前記エレクトロルミネセントデバイス及び前記スイッチング回路が、別個の基板上に製作される、請求項1に記載の光放出システム。
- 前記2つ以上の発光素子における各発光素子内の前記エレクトロルミネセントデバイス及び前記スイッチング回路が、モノリシック集積化されている、請求項1に記載の光放出システム。
- 前記少なくとも1つの発光素子内の前記ポテンシャル井戸及び前記エレクトロルミネセントデバイスが、異なる基板上に製作される、請求項1に記載の光放出システム。
- 前記少なくとも1つの発光素子内の前記ポテンシャル井戸が、無機ポテンシャル井戸を含む、請求項1に記載の光放出システム。
- 前記少なくとも1つの発光素子内の前記ポテンシャル井戸が、II−VI半導体を含む、請求項1に記載の光放出システム。
- 前記少なくとも1つの発光素子内の前記ポテンシャル井戸が、CdMgZnSeを含む、請求項1に記載の光放出システム。
- 前記少なくとも1つの発光素子内の前記ポテンシャル井戸及び前記エレクトロルミネセントデバイスが、少なくとも2つの異なる半導体族に由来する、請求項1に記載の光放出システム。
- 前記少なくとも2つの異なる半導体族が、II−VI及びIII−V半導体族を含む、請求項12に記載の光放出システム。
- 前記2つ以上の発光素子間の光学的クロストークを低減するために遮光素子を更に含む、請求項1に記載の光放出システム。
- 2つ以上のモノリシック集積化発光素子を含む光放出システムであって、
前記2つ以上のモノリシック集積化発光素子における各発光素子は、エレクトロルミネセントデバイスを含んでおり、
前記2つ以上の発光素子における少なくとも1つの発光素子は、前記発光素子内の前記エレクトロルミネセントデバイスによって放出された光を下方変換するポテンシャル井戸を含む、光放出システム。 - 前記少なくとも1つの発光素子内の前記ポテンシャル井戸が、無機ポテンシャル井戸を含む、請求項15に記載の光放出システム。
- 前記2つ以上のモノリシック集積化発光素子のうちのいずれの発光素子も、前記発光素子内のエレクトロルミネセントデバイスを駆動する専用のスイッチング回路をもたない、請求項15に記載の光放出システム。
- 前記2つ以上のモノリシック集積化発光素子内の前記エレクトロルミネセントデバイスが、モノリシック集積化されている、請求項15に記載の光放出システム。
- 第1の波長で光を出力可能な少なくとも1つの第1の発光素子と、
前記第1の波長とは異なる第2の波長で光を出力可能な少なくとも1つの第2の発光素子と、
前記第1の波長及び前記第2の波長とは異なる第3の波長で光を出力可能な少なくとも1つの第3の発光素子と、を含む光放出システムであって、
前記少なくとも1つの第3の発光素子は、
前記第1の波長で光を放出可能なエレクトロルミネセントデバイスと、
前記エレクトロルミネセントデバイスによって放出された光の少なくとも一部分を前記第1の波長から前記第2の波長に変換する第1のフォトルミネセント素子と、
前記エレクトロルミネセントデバイスによって放出された光又は前記第1のフォトルミネセント素子によって変換された光の少なくとも一部分を前記第3の波長に変換する第2のフォトルミネセント素子とを含む、光放出システム。 - 前記少なくとも1つの第1の発光素子が、前記第1の波長で光を放出可能なエレクトロルミネセントデバイスを含む、請求項19に記載の光放出システム。
- 前記少なくとも1つの第2の発光素子が、第4の波長で光を放出可能なエレクトロルミネセントデバイスと、前記エレクトロルミネセントデバイスによって放出された光の少なくとも一部分を前記第4の波長から前記第2の波長に変換するフォトルミネセント素子とを含む、請求項19に記載の光放出システム。
- 前記第4の波長が、前記第1の波長と同一である、請求項21に記載の光放出システム。
- 前記第1のフォトルミネセント素子が、ポテンシャル井戸を含む、請求項19に記載の光放出システム。
- 前記第2のフォトルミネセント素子が、ポテンシャル井戸を含む、請求項19に記載の光放出システム。
- 前記第1の波長が、スペクトルの青色領域にあり、前記第2の波長が、スペクトルの緑色領域にあり、前記第3の波長が、スペクトルの赤色領域にある、請求項19に記載の光放出システム。
- 少なくとも2つの第2の発光素子を含んでおり、前記少なくとも2つの第2の発光素子における各第2の発光素子は、前記第1の波長で光を放出可能なエレクトロルミネセントデバイスと、前記エレクトロルミネセントデバイスによって放出された光の少なくとも一部分を前記第1の波長から前記第2の波長に変換するフォトルミネセント素子とを含んでおり、
前記少なくとも2つの第2の発光素子内の少なくとも2つのフォトルミネセント素子が、連続構造を形成する、請求項19に記載の光放出システム。 - 第1の波長で光を出力可能な少なくとも1つの第1の発光素子と、
前記第1の波長とは異なる第2の波長で光を出力可能な少なくとも1つの第2の発光素子と、を含む光放出システムであって、
前記少なくとも1つの第2の発光素子は、
前記第1の波長で光を放出可能なエレクトロルミネセントデバイスと、
前記エレクトロルミネセントデバイスによって放出された光の少なくとも一部分を前記第1の波長から前記第2の波長に変換するポテンシャル井戸とを含む、光放出システム。 - 前記少なくとも1つの第1の発光素子が、前記第1の波長で光を放出可能なエレクトロルミネセントデバイスを含む、請求項27に記載の光放出システム。
- 光を放出可能なピクセル化された光放出システムであって、各ピクセルは、エレクトロルミネセントデバイスを含んでおり、少なくとも1つのピクセルは、前記ピクセル内の前記エレクトロルミネセントデバイスによって放出された光を下方変換する1つ以上のポテンシャル井戸を含んでいる、ピクセル化された光放出システムと、
前記ピクセル化された光放出システムによって放出された光を受け取る、ピクセル化された空間光変調器と、を含む光学システム。 - 前記光放出システムの各ピクセルから放出される光が、ほぼ同一のスペクトルを有する、請求項29に記載の光学システム。
- 前記光放出システムが、前記空間光変調器よりも少ないピクセルを有する、請求項29に記載の光学システム。
- 請求項29に記載の光学システムを含む、投射システム。
- 画像を形成すること及び光を放出することが可能な、ピクセル化された光放出システムであって、前記光放出システム内の各ピクセルが、エレクトロルミネセントデバイスを含んでおり、
少なくとも1つのピクセルが、前記ピクセル内の前記エレクトロルミネセントデバイスによって放出された光を下方変換する1つ以上のポテンシャル井戸を含んでいる、ピクセル化された光放出システム。 - 前記光放出システム内の前記ピクセルが、アクティブマトリクスとして構成される、請求項33に記載のピクセル化された光放出システム。
- 前記光放出システム内の前記エレクトロルミネセントデバイスが、モノリシック集積化されている、請求項33に記載のピクセル化された光放出システム。
- 前記1つ以上のポテンシャル井戸が、無機ポテンシャル井戸を含む、請求項33に記載のピクセル化された光放出システム。
- 請求項33に記載のピクセル化された光放出システムを含む、投射システム。
- 第1の複数のピクセルを含む光放出システムであって、各ピクセルは、前記ピクセルからの出力光を制御する専用のスイッチング回路を有しており、少なくとも1つのピクセルは、エレクトロルミネセントデバイスと、前記エレクトロルミネセントデバイスによって放出された光を下方変換するポテンシャル井戸とを含む、光放出システムと、
前記光放出システムから光を受け取り、第2の複数のピクセルを含む、空間光変調器(SLM)であって、前記第1の複数のピクセルにおける各ピクセルが、前記第2の複数のピクセルの異なるサブセットを照らす空間光変調器と、を含むディスプレイシステム。 - 前記第2の複数のピクセルにおける少なくとも1つのピクセルが、前記第1の複数のピクセルにおける1つのピクセルからの光だけを受け取る、請求項38に記載のディスプレイシステム。
- 前記光放出システム内の少なくとも1つのピクセルが、複数のサブピクセルを含んでおり、前記少なくとも1つのピクセルの前記専用のスイッチング回路が、前記少なくとも1つのピクセル内の各サブピクセルからの出力光を制御する、請求項38に記載のディスプレイシステム。
- 請求項38に記載のディスプレイシステムを含む、投射システム。
- 2つ以上のモノリシック集積化発光素子を含み、各発光素子が白色光を出力可能である、光放出システムであって、
前記2つ以上のモノリシック集積化発光素子における少なくとも1つの発光素子が、
青色光を放出可能な発光ダイオード(LED)と、
前記青色光の少なくとも一部分を緑色光に変換する第1のポテンシャル井戸と、
前記緑色又は青色光の少なくとも一部分を赤色光に変換する第2のポテンシャル井戸とを含む、光放出システム。 - 前記LEDが、III−V半導体を含み、前記第1のポテンシャル井戸及び前記第2のポテンシャル井戸のうちの少なくとも1つが、II−VI半導体を含む、請求項42に記載の光放出システム。
- 前記II−VI半導体が、Cd、Zn、Se、及び任意選択のMgからなる合金を含む、請求項42に記載の光放出システム。
- 2つの発光素子のそれぞれが、
青色光を放出可能な発光ダイオード(LED)と、
前記青色光の少なくとも一部分を緑色光に変換する第1のポテンシャル井戸と、を含んでおり、そして、
前記第1のポテンシャル井戸の2つが、同一の層からなる、請求項42に記載の光放出システム。 - 光を放出可能な複数のエレクトロルミネセントデバイスを含む光放出システムであって、
第1の光変換素子が、2つ以上のエレクトロルミネセントデバイスによって放出される光の少なくとも一部分を下方変換するために前記2つ以上のエレクトロルミネセントデバイスを覆う、光放出システム。 - 前記第1の光変換素子によって放出される光の少なくとも一部分を変換するために前記第1の光変換素子の一部分を覆う、第2の光変換素子を更に含む、請求項46に記載の光放出システム。
- 前記第1の光変換素子及び前記第2の光変換素子のうちの少なくとも1つが、ポテンシャル井戸を含む、請求項47に記載の光放出システム。
- 前記複数のエレクトロルミネセントデバイスのうちの少なくとも1つが、LEDである、請求項46に記載の光放出システム。
- 前記光放出システムの光放出側を平坦化する光学的に透明な層を更に含む、請求項46に記載の光放出システム。
- 第1の基板上に製作された複数のエレクトロルミネセントデバイスと、
前記複数のエレクトロルミネセントデバイス内のエレクトロルミネセントデバイスによって放出された光を変換するポテンシャル井戸と、
第2の基板上に製作された複数のスイッチング回路と、を含む物品であって、
前記第2の基板上の各スイッチング回路は、前記第1の基板上の対応するエレクトロルミネセントデバイスを駆動するように設計されており、前記第1の基板は、前記第2の基板上の各スイッチング回路が前記第1の基板上の対応するエレクトロルミネセントデバイスに向かい合うように、前記第2の基板に取り付けられる、物品。 - 前記複数のエレクトロルミネセントデバイスのうちの少なくとも1つのエレクトロルミネセントデバイスが、LEDを含む、請求項51に記載の物品。
- 前記第1の基板が、結合層によって前記第2の基板に取り付けられる、請求項51に記載の物品。
- 第1の波長で光を出力可能な少なくとも1つの第1の発光素子と、
前記第1の波長とは異なる第2の波長で光を出力可能な少なくとも1つの第2の発光素子と、を含む光放出システムであって、
前記少なくとも1つの第2の発光素子は、
前記第1の波長で光を放出可能なエレクトロルミネセントデバイスと、
前記エレクトロルミネセントデバイスによって放出された光の少なくとも一部分を前記第1の波長から前記第1の波長及び前記第2の波長とは異なる第3の波長に変換する第1の光変換素子と、
前記第1の光変換素子によって変換された光の少なくとも一部分を前記第3の波長から前記第2の波長に変換する第2の光変換素子とを含む、光放出システム。 - 前記第1の光変換素子及び前記第2の光変換素子のうちの少なくとも1つが、ポテンシャル井戸を含む、請求項54に記載の光放出システム。
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Also Published As
Publication number | Publication date |
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TW200847490A (en) | 2008-12-01 |
CN101627482A (zh) | 2010-01-13 |
US20150069433A1 (en) | 2015-03-12 |
TWI521731B (zh) | 2016-02-11 |
EP2122695A1 (en) | 2009-11-25 |
WO2008109296A1 (en) | 2008-09-12 |
EP2122695A4 (en) | 2013-09-11 |
US8941566B2 (en) | 2015-01-27 |
US20100117997A1 (en) | 2010-05-13 |
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