WO2021012402A1 - 一种有机发光二极管显示面板及其制作方法 - Google Patents
一种有机发光二极管显示面板及其制作方法 Download PDFInfo
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- WO2021012402A1 WO2021012402A1 PCT/CN2019/110237 CN2019110237W WO2021012402A1 WO 2021012402 A1 WO2021012402 A1 WO 2021012402A1 CN 2019110237 W CN2019110237 W CN 2019110237W WO 2021012402 A1 WO2021012402 A1 WO 2021012402A1
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- organic light
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 18
- 230000000903 blocking effect Effects 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 27
- 238000002360 preparation method Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910017107 AlOx Inorganic materials 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 5
- 229910003087 TiOx Inorganic materials 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 5
- -1 HfOx Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- 230000002265 prevention Effects 0.000 claims 2
- 239000010410 layer Substances 0.000 description 178
- 239000010408 film Substances 0.000 description 13
- 239000012044 organic layer Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Definitions
- the present invention relates to the field of display technology, and in particular to an organic light emitting diode display panel and a manufacturing method thereof.
- OLED Organic Light-Emitting Diode
- the existing encapsulation layer generally adopts a stacked structure of organic/inorganic film layers to block water and oxygen.
- a barrier is generally designed around the AA area.
- the adhesion between the first inorganic layer and the barrier is poor, which causes the encapsulation layer to easily peel off and reduces the display panel Life.
- the purpose of the present invention is to provide an organic light emitting diode display panel and a manufacturing method thereof, which can prevent the peeling of the packaging layer and improve the service life of the display panel.
- an organic light emitting diode display panel which includes:
- the pixel definition layer is arranged on the base substrate; the pixel definition layer includes at least one blocking portion and a plurality of pixel definition units arranged at intervals; an organic light-emitting layer is arranged in the gap between two adjacent pixel definition units;
- the first inorganic layer is provided on the organic light-emitting layer, the pixel defining unit, and the anti-peeling layer, and the adhesion force between the anti-peeling layer and the first inorganic layer is greater than that between the blocking portion and the The adhesion between the first inorganic layers.
- the present invention also provides a manufacturing method of an organic light emitting diode display panel, which includes:
- a first inorganic layer is fabricated on the organic light-emitting layer, the pixel defining unit, and the anti-peeling layer, and the adhesion force between the anti-peeling layer and the first inorganic layer is greater than that between the blocking portion and the anti-peeling layer. The adhesion between the first inorganic layer.
- an anti-peeling layer is added between the barrier portion and the first inorganic layer, and the adhesion force between the anti-peeling layer and the first inorganic layer is greater than that of the barrier portion
- the adhesive force with the first inorganic layer prevents the encapsulation layer from peeling off, and improves the service life of the display panel.
- FIG. 1 is a schematic diagram of the structure of a conventional organic light emitting diode display panel
- FIG. 2 is a schematic diagram of the structure of an organic light emitting diode display panel of the present invention.
- FIG. 3 is a schematic structural diagram of the first step of the manufacturing method of the organic light emitting diode display panel of the present invention.
- FIG. 4 is a schematic structural diagram of the second step of the manufacturing method of the organic light emitting diode display panel of the present invention.
- FIG. 5 is a schematic structural diagram of the third step of the manufacturing method of the organic light emitting diode display panel of the present invention.
- the existing organic light emitting diode display panel includes a base substrate 11, a pixel definition layer 12, an organic light emitting layer 10, a common layer 13, a first inorganic layer 14, an organic layer 15 and a second inorganic layer 16.
- the base substrate 11 includes a glass substrate and a switch array layer.
- the pixel defining layer 12 includes two blocking portions 121 and two pixel defining units 122 arranged at intervals.
- the organic light emitting layer 10 is located in the gap between two adjacent pixel defining units 122, and the common layer 13 is located on the organic light emitting On the layer 10 and the pixel definition unit 122.
- the first inorganic layer 14 is provided on the common layer 13 and the blocking portion 121, the organic layer 15 is provided on a part of the first inorganic layer 14, and the second inorganic layer 16 is provided on the organic layer 15.
- the temperature of the subsequent manufacturing process cannot be too high, for example, generally not higher than 85° C., so the first inorganic layer 14 needs to be prepared at a relatively low temperature.
- the adhesion performance of the low-temperature film is not as good as that of the high-temperature film, so that the adhesion between the first inorganic layer 14 and the blocking portion 121 is poor, and peeling easily occurs.
- the material of the existing barrier 121 is generally an organic polymer material, and the material of the first inorganic layer is an inorganic material. The poor compatibility between different materials may also cause peeling between the first inorganic layer 14 and the barrier 121.
- FIG. 2 is a schematic structural diagram of an organic light emitting diode display panel of the present invention.
- the organic light emitting diode display panel base substrate 11, pixel defining layer 12, organic light emitting layer 10, anti-stripping layer 21, first inorganic layer 14 of the present invention may also include a common layer 13, an organic layer 15, and a second inorganic layer 16.
- the base substrate 11 includes a bottom plate and a switch array layer, and the switch array layer is arranged on the bottom plate.
- the substrate may be a glass substrate or a flexible substrate.
- the switch array layer includes a plurality of thin film transistors.
- the pixel defining layer 12 is provided on the base substrate 11; the pixel defining layer 12 includes two blocking portions 121 and two pixel defining units 122 arranged at intervals, wherein the gap between two adjacent pixel defining units 122
- An organic light-emitting layer 10 is provided at a location where the material of the pixel defining layer 12 is an organic material.
- the material of the pixel definition layer 12 may be a parylene-based material.
- the number of blocking portions 121 is not limited to two, and may also be one or more than two, and the number of pixel defining units 122 may also be two or more.
- An anti-peel layer 21 covers the barrier portions 121; specifically, an anti-peel layer 21 is covered on each barrier portion 121.
- the material of the anti-peeling layer 21 is an inorganic material.
- the anti-peel layer 21 is made of the same material as the first inorganic layer 14, and both are inorganic materials, which improves the compatibility between the film layers and further improves the adhesion between the anti-peel layer 21 and the first inorganic layer 14.
- the film forming temperature of the anti-peel layer 21 is greater than 230° C., and the specific temperature can be set according to actual requirements.
- the material of the anti-stripping layer 21 includes at least one of SiNx, SiOx, SiOxNy, AlOx, HfOx, and TiOx.
- the thickness of the anti-stripping layer 21 ranges from 50 nm to 100 nm.
- the preparation process of the anti-stripping layer 21 may be the same as the preparation process of the first inorganic layer.
- the anti-peeling layer 21 may also be transparent glue, such as optical glue.
- the material of the anti-peeling layer 21 is not limited to the above materials.
- the first inorganic layer 14 is provided on the organic light-emitting layer 10, the pixel defining unit 122 and the anti-peeling layer 21, and the adhesion force between the anti-peeling layer 21 and the first inorganic layer 14 is greater than that of the The adhesion between the blocking portion 121 and the first inorganic layer 14.
- the film forming temperature of the first inorganic layer 14 is lower than the film forming temperature of the anti-stripping layer 21.
- the film forming temperature of the first inorganic layer 14 is less than 80 degrees.
- the first inorganic layer 14 is used to block water and oxygen, and its material can be at least one of SiNx, SiOx, SiOxNy, AlOx, HfOx, and TiOx.
- the first inorganic layer 14 can be used in PECVD, ALD, PLD A process preparation.
- the common layer 13 is disposed on the organic light-emitting layer 10 and the pixel defining unit 122, and is located under the first inorganic layer 14.
- the common layer 13 is used to enhance the light extraction rate and prevent the subsequent process from damaging the underlying film.
- the first inorganic layer 14 is provided on the common layer 13 and the blocking portion 121.
- the organic layer 15 is provided on a part of the first inorganic layer 14, specifically on the first inorganic layer 14 in the display area.
- the material of the organic layer 15 can be Acrylate, Epoxy resin, HMDSO, Alucone, etc., and can be prepared by processes such as IJP, Dispenser, and PECVD.
- the second inorganic layer 16 is provided on the organic layer 15.
- the material of the second inorganic layer 16 is the same as the material of the first inorganic layer 14.
- the adhesion between the anti-peel layer 21 and the blocking portion 121 is also greater than the adhesion between the first inorganic layer 14 and the blocking portion 121 force.
- the film-forming temperature of the anti-peel layer 21 is greater than 230 °C, the specific temperature can be set according to actual needs.
- the adhesion force between the anti-peeling layer and the first inorganic layer is greater than the adhesion force between the blocking portion and the first inorganic layer, so it can be avoided
- the peeling of the encapsulation layer increases the service life of the display panel. Furthermore, since the film forming temperature of the anti-peeling layer is higher, the adhesion of the anti-peeling layer can be further improved, and the anti-peeling layer and the barrier portion and the first inorganic layer
- the material of the anti-peeling layer is the same as that of the first inorganic layer, so the compatibility between the film layers can be improved, and the encapsulation layer can be further prevented from peeling off.
- the present invention also provides a manufacturing method of an organic light emitting diode display panel, which includes:
- the entire pixel defining layer 12 is prepared on the base substrate 11, and then the blocking portion 121 and the pixel defining unit 122 are obtained through exposure, development and other processes.
- a whole layer of anti-stripping layer 21 can be deposited on the blocking portion 121 by PECVD, ALD, PLD, etc., and then through steps such as exposure and development, the anti-stripping layer 21 can cover the blocking portion. On 121, the remaining positions are not covered with the anti-peeling layer 21.
- the organic light-emitting layer 10 is formed at the gap between two adjacent pixel defining units 122.
- an organic light-emitting material is evaporated at the gap between two adjacent pixel defining units 122 to obtain the organic light-emitting layer 10.
- a first inorganic layer 14 is formed on the organic light-emitting layer 10, the pixel defining unit 122 and the anti-stripping layer 21.
- the first inorganic layer 14 may also be provided on part of the base substrate 11.
- the adhesion force between the anti-peeling layer 21 and the first inorganic layer 14 is greater than the adhesion force between the blocking portion 121 and the first inorganic layer 14.
- the entire first inorganic layer 14 can be deposited by PECVD, ALD, PLD and other processes.
- the preparation process of the anti-stripping layer 21 is the same as the preparation process of the first inorganic layer 14.
- the anti-peel layer 21 is made of the same material as the first inorganic layer 14.
- the method may also include sequentially forming an organic layer 15 and a second inorganic layer 16 on the first inorganic layer 14.
- the method further includes:
- a common layer 13 can be formed on the organic light emitting layer 10 and the pixel defining unit 122.
- step S104 that is, the step of forming a first inorganic layer on the organic light-emitting layer, the pixel defining unit, and the anti-stripping layer specifically includes:
- a first inorganic layer 14 is formed on the common layer 13 and the anti-peeling layer 21.
- an anti-peeling layer is added between the barrier portion and the first inorganic layer, and the adhesion force between the anti-peeling layer and the first inorganic layer is greater than that of the barrier portion
- the adhesive force with the first inorganic layer prevents the encapsulation layer from peeling off, and improves the service life of the display panel.
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Abstract
本发明提供一种有机发光二极管显示面板及其制作方法，该显示面板包括：衬底基板；像素定义层，设于所述衬底基板上；所述像素定义层包括至少一阻挡部；防剥离层，覆盖在所述阻挡部上；第一无机层，设于所述防剥离层上，所述防剥离层与所述第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力。
Description
本发明涉及显示技术领域，特别是涉及一种有机发光二极管显示面板及其制作方法。
随着显示技术的发展，有机发光二极管显示面板(Organic Light-Emitting Diode，OLED)器件因其重量轻、厚度薄、可弯曲、视角范围大等优点，被广泛地应用。而有机发光材料对水氧比较敏感，少量的水氧入侵即可造成器件的快速衰减及老化，从而影响其寿命。为了保证柔性显示面板件的使用寿命，其封装技术尤为重要。
现有的封装层（TFE），一般采用有机/无机膜层的堆叠结构来阻隔水氧。为了防止有机膜流出无机膜的覆盖区域，一般会在AA区外围设计阻挡部，然而第一无机层与阻挡部之间的粘结力较差，导致封装层容易发生剥离现象，降低了显示面板的使用寿命。
因此，有必要提供一种有机发光二极管显示面板及其制作方法，以解决现有技术所存在的问题。
本发明的目的在于提供一种有机发光二极管显示面板及其制作方法，能够防止封装层发生剥离现象，提高了显示面板的使用寿命。
为解决上述技术问题，本发明提供一种有机发光二极管显示面板，其包括：
衬底基板；
像素定义层，设于所述衬底基板上；所述像素定义层包括至少一阻挡部以及多个间隔设置的像素定义单元；相邻两个像素定义单元之间的间隙处设置有机发光层；
防剥离层，覆盖在所述阻挡部上；
第一无机层，设于所述有机发光层、所述像素定义单元以及所述防剥离层上，所述防剥离层与所述第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力。
本发明还提供一种有机发光二极管显示面板的制作方法，其包括：
在衬底基板上制作像素定义层，对所述像素定义层进行图案化处理，以使形成至少一阻挡部以及多个间隔设置的像素定义单元；
在所述阻挡部上制作防剥离层；
在相邻两个所述像素定义单元之间的间隙处制作有机发光层；
在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层，所述防剥离层与所述第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力。
本发明的有机发光二极管显示面板及其制作方法，通过在阻挡部与第一无机层之间增加防剥离层，所述防剥离层与第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力，因而防止封装层发生剥离现象，提高了显示面板的使用寿命。
图1为现有有机发光二极管显示面板的结构示意图；
图2为本发明有机发光二极管显示面板的结构示意图；
图3为本发明有机发光二极管显示面板的制作方法的第一步的结构示意图；
图4为本发明有机发光二极管显示面板的制作方法的第二步的结构示意图；
图5为本发明有机发光二极管显示面板的制作方法的第三步的结构示意图。
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
如图1所示，现有的有机发光二极管显示面板包括衬底基板11、像素定义层12、有机发光层10、共通层13、第一无机层14、有机层15以及第二无机层16。衬底基板11包括玻璃基板和开关阵列层。像素定义层12包括两个阻挡部121和两个间隔设置的像素定义单元122，其中有机发光层10位于相邻两个所述像素定义单元122之间的间隙处，共通层13设于有机发光层10以及像素定义单元122上。第一无机层14设于所述共通层13以及阻挡部121上，有机层15设于部分第一无机层14上，第二无机层16设于有机层15上。
由于有机发光层的材料不耐高温，导致其后续制程的温度不能太高，比如一般不高于85℃，因此第一无机层14需要在较低温下制备。而低温膜的附着性能不如高温膜，使得第一无机层14与阻挡部121之间附力较差，容易发生剥离。而现有阻挡部121的材料一般为有机聚合物材料，第一无机层的材料为无机材料。不同材料之间的兼容性较差，也会使得第一无机层14与阻挡部121之间发生剥离。
请参照图2至5，图2为本发明有机发光二极管显示面板的结构示意图。
本发明的有机发光二极管显示面板衬底基板11、像素定义层12、有机发光层10、防剥离层21、第一无机层14；其还可包括共通层13、有机层15、第二无机层16。
衬底基板11包括底板和开关阵列层，开关阵列层设于底板上。基板可以为玻璃基板或者柔性基板。开关阵列层包括多个薄膜晶体管。
像素定义层12设于所述衬底基板11上；像素定义层12包括两个阻挡部121和两个间隔设置的像素定义单元122，其中相邻两个所述像素定义单元122之间的间隙处设置有机发光层10，其中所述像素定义层12的材料为有机材料。在一实施方式中，像素定义层12的材料可为聚对二甲苯（parylene）类材料。当然可以理解的，阻挡部121的数量不限于两个，还可以为一个或者两个以上，像素定义单元122的数量也可为两个以上。
防剥离层21覆盖在所述阻挡部121上；具体地在每个阻挡部121上均覆盖有防剥离层21。其中为了进一步提高防剥离层21与第一无机层之间的粘结力，在一实施方式中，所述防剥离层21的材料为无机材料。防剥离层21与第一无机层14的材料相同，且都为无机材料，提高了膜层之间的兼容性，进一步提高了防剥离层21与第一无机层14之间的粘结力。
在一实施方式中，为进一步提高防剥离层与第一无机层的附着力，所述防剥离层21的成膜温度大于230℃，具体温度可依据实际需求设定。
其中所述防剥离层21的材料包括SiNx、SiOx、SiOxNy、AlOx、HfOx以及TiOx中的至少一种。
在一实施方式中，所述防剥离层21的厚度范围为50nm-100nm。所述防剥离层21的制备工艺可与所述第一无机层的制备工艺相同。在另一实施方式中，所述防剥离层21也可为透明胶，比如光学胶，当然，所述防剥离层21的材料不限于以上材料。
第一无机层14设于所述有机发光层10、所述像素定义单元122以及所述防剥离层21上，所述防剥离层21与第一无机层14之间的粘结力大于所述阻挡部121与所述第一无机层14之间的粘结力。
在一实施方式中，为了避免在制程中损坏有机发光层，所述第一无机层14的成膜温度小于所述防剥离层21的成膜温度。比如所述第一无机层14的成膜温度小于80度。第一无机层14用于阻隔水氧，其材料可为SiNx、SiOx、SiOxNy、AlOx、HfOx以及TiOx中的至少一种，结合图5，第一无机层14可用过PECVD、ALD、PLD中的一种工艺制备。
其中，所述共通层13设于所述有机发光层10以及所述像素定义单元122上，且位于第一无机层14的下方。所述共通层13用于增强出光率、以及防止后续制程损伤下方膜层。其中第一无机层14设于所述共通层13以及阻挡部121上。
返回图1，有机层15设于部分第一无机层14上，具体设于位于显示区域的第一无机层14上。有机层15的材料可为Acrylate、Epoxy resin、HMDSO、Alucone等，可通过IJP、Dispenser、PECVD等工艺制备。
第二无机层16设于有机层15上。第二无机层16的材料与第一无机层14的材料相同。
在另一实施例中，为了进一步提高封装效果，所述防剥离层21与所述阻挡部121之间的粘结力也大于所述第一无机层14与所述阻挡部121之间的粘结力。在一实施方式中，为进一步提高防剥离层与第一无机层的附着力，此外也提高第一无机层与阻挡部之间的粘结力，所述防剥离层21的成膜温度大于230℃，具体温度可依据实际需求设定。
由于在阻挡部121上设置防剥离层21，所述防剥离层与第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力，因此可以避免封装层发生剥离，提高了显示面板的使用寿命，进一步地，由于防剥离层的成膜温度较高，可进一步提高防剥离层的附着性，提高了防剥离层与阻挡部以及第一无机层之间的结合力；此外，防剥离层的材料与第一无机层的材料相同，因此可以提高膜层之间的兼容性，进一步防止封装层发生剥离。
本发明还提供一种有机发光二极管显示面板的制作方法，其包括：
S101、在衬底基板上制作像素定义层，对所述像素定义层进行图案化处理，以使形成至少一阻挡部以及多个间隔设置的像素定义单元；
如图3所示，在衬底基板11上制备整层的像素定义层12，之后通过曝光、显影等工序分别得到阻挡部121和像素定义单元122。
S102、在所述阻挡部上制作防剥离层；
如图4所示，比如可在所述阻挡部121上通过PECVD、ALD、PLD等工艺沉积整层的防剥离层21，然后通过曝光、显影等步骤，使所述防剥离层21覆盖阻挡部121上，其余位置未覆盖防剥离层21。
S103、在相邻两个所述像素定义单元之间的间隙处制作有机发光层；
如图5所示，在相邻两个所述像素定义单元122之间的间隙处制作有机发光层10。在一实施方式中，在相邻两个所述像素定义单元122之间的间隙处蒸镀有机发光材料，以得到有机发光层10。
S104、在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层。
例如，返回图2，在所述有机发光层10、所述像素定义单元122以及所述防剥离层21上制作第一无机层14。此外第一无机层14还可设于部分衬底基板11上。其中所述防剥离层21与所述第一无机层14之间的粘结力大于所述阻挡部121与所述第一无机层14之间的粘结力。比如可通过PECVD、ALD、PLD等工艺沉积整层的第一无机层14。其中所述防剥离层21的制备工艺与所述第一无机层14的制备工艺相同。其中防剥离层21与第一无机层14的材料相同。当然所述方法还可包括在第一无机层14上依次制作有机层15以及第二无机层16。
在另一实施方式中，在上述制作方法的基础上，所述在所述阻挡部上制作防剥离层的步骤之后，以及所述在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层的步骤之前，所述方法还包括：
S105、在所述有机发光层、所述像素定义单元上制作共通层；
例如，如图5所示，可在有机发光层10以及所述像素定义单元122制作共通层13。
上述步骤S104，也即在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层的步骤具体包括：
S201、在所述共通层以及所述防剥离层上制作第一无机层。
例如，返回图2，在所述共通层13以及所述防剥离层21上制作第一无机层14。
本发明的有机发光二极管显示面板及其制作方法，通过在阻挡部与第一无机层之间增加防剥离层，所述防剥离层与第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力，因而防止封装层发生剥离现象，提高了显示面板的使用寿命。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。
Claims (20)
- 一种有机发光二极管显示面板，其包括：衬底基板；像素定义层，设于所述衬底基板上；所述像素定义层包括至少一阻挡部以及多个间隔设置的像素定义单元；相邻两个像素定义单元之间的间隙处设置有机发光层；防剥离层，覆盖在所述阻挡部上；以及第一无机层，设于所述有机发光层、所述像素定义单元以及所述防剥离层上，所述防剥离层与所述第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述防剥离层的材料与所述第一无机层的材料相同。
- 根据权利要求2所述的有机发光二极管显示面板，其中所述防剥离层的材料包括SiNx、SiOx、SiOxNy、AlOx、HfOx以及TiOx中的至少一种。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述防剥离层与所述阻挡部之间的粘结力也大于所述第一无机层与所述阻挡部之间的粘结力。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述防剥离层的成膜温度大于230℃。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述第一无机层的成膜温度小于所述防剥离层的成膜温度。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述防剥离层的厚度范围为50nm-100nm。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述防剥离层的制备工艺与所述第一无机层的制备工艺相同。
- 根据权利要求1所述的有机发光二极管显示面板，其中所述有机发光二极管显示面板还包括共通层，所述共通层设于所述有机发光层以及所述像素定义单元上，且位于所述第一无机层的下方。
- 一种有机发光二极管显示面板的制作方法，其包括：在衬底基板上制作像素定义层，对所述像素定义层进行图案化处理，以使形成至少一阻挡部以及多个间隔设置的像素定义单元；在所述阻挡部上制作防剥离层；在相邻两个所述像素定义单元之间的间隙处制作有机发光层；以及在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层，所述防剥离层与所述第一无机层之间的粘结力大于所述阻挡部与所述第一无机层之间的粘结力。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层的制备工艺与所述第一无机层的制备工艺相同。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述在所述阻挡部上制作防剥离层的步骤之后，以及所述在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层的步骤之前，所述方法还包括：在所述有机发光层、所述像素定义单元上制作共通层；在所述有机发光层、所述像素定义单元以及所述防剥离层上制作第一无机层的步骤包括：在所述共通层以及所述防剥离层上制作第一无机层。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层的材料与所述第一无机层的材料相同。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层的材料包括SiNx、SiOx、SiOxNy、AlOx、HfOx以及TiOx中的至少一种。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层与所述阻挡部之间的粘结力也大于所述第一无机层与所述阻挡部之间的粘结力。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层的成膜温度大于230℃。
- 根据权利要求16所述的有机发光二极管显示面板的制作方法，其中所述第一无机层的成膜温度小于所述防剥离层的成膜温度。
- 根据权利要求17所述的有机发光二极管显示面板的制作方法，其中所述第一无机层的成膜温度小于80度。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述防剥离层的厚度范围为50nm-100nm。
- 根据权利要求10所述的有机发光二极管显示面板的制作方法，其中所述第一无机层的材料包括SiNx、SiOx、SiOxNy、AlOx、HfOx以及TiOx中的至少一种。
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