WO2020077919A1 - 一种有机发光二极管显示器 - Google Patents

一种有机发光二极管显示器 Download PDF

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Publication number
WO2020077919A1
WO2020077919A1 PCT/CN2019/073851 CN2019073851W WO2020077919A1 WO 2020077919 A1 WO2020077919 A1 WO 2020077919A1 CN 2019073851 W CN2019073851 W CN 2019073851W WO 2020077919 A1 WO2020077919 A1 WO 2020077919A1
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Prior art keywords
emitting diode
light emitting
organic light
barrier
diode display
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PCT/CN2019/073851
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English (en)
French (fr)
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曹君
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武汉华星光电半导体显示技术有限公司
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Priority to US16/631,204 priority Critical patent/US11665954B2/en
Publication of WO2020077919A1 publication Critical patent/WO2020077919A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/54—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
    • C09K11/641—Chalcogenides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/65—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention relates to the field of display technology, in particular to an organic light emitting diode display.
  • the inorganic layer in the thin-film encapsulation acts as a barrier to water and oxygen, and the organic layer is used to cover the particles generated in the previous process and relieve the stress generated when the film is bent.
  • the organic layer has a certain fluidity, in order to limit it to a specific area, a circle or several circles of barriers are generally provided around the periphery of the display area to block the flow of the organic layer.
  • the film-forming range of the organic layer in thin-film encapsulation is in the area surrounded by the barrier, which results in the edge (area near the barrier) gradually thinning.
  • the organic layer may not be able to completely cover the particles, causing the film layer in the subsequent process to be pierced, thereby reducing the packaging effect.
  • the purpose of the present invention is to provide an organic light emitting diode display, which can improve the ability of the organic layer to coat the particles and improve the packaging effect.
  • an organic light emitting diode display which includes:
  • a flexible substrate including a display area, a first barrier area and a second barrier area, the first barrier area is located between the display area and the second barrier area, and the flexible substrate of the second barrier area
  • a barrier is provided on the top; wherein the flexible substrate of the first barrier area is provided with a groove, and the flexible substrate of the display area is provided with an organic light emitting diode unit, and the depth of the groove is 1 ⁇ m to 10 ⁇ m
  • a thin film encapsulation layer is provided on the organic light emitting diode unit and the barrier, and the thin film encapsulation layer includes a stacked structure of a first inorganic layer, a first organic layer, and a second inorganic layer, wherein the first organic layer The thickness of the side close to the barrier is larger than a preset value.
  • the groove is made by etching or embossing.
  • the organic light emitting diode display further includes:
  • a switch array layer, the switch array layer is located on the entire flexible substrate, and the switch array layer corresponding to the first blocking region also has a groove.
  • the cross-sectional shape of the groove is arc or trapezoid.
  • the organic light emitting diode display further includes:
  • the first organic layer covers the display area and the first barrier area, and the first organic layer is located inside the barrier.
  • the material of the first inorganic layer includes but is not limited to SiN x , SiO x N y , SiO x , SiC x N y , ZnO, and AlO.
  • the material of the first organic layer includes, but is not limited to, Acrylate, HMDSO, polyacrylates, polycarbonates, and polystyrene.
  • the thickness of the flexible substrate ranges from 5 ⁇ m to 30 ⁇ m.
  • an organic light emitting diode display which includes:
  • a flexible substrate including a display area, a first barrier area and a second barrier area, the first barrier area is located between the display area and the second barrier area, and the flexible substrate of the second barrier area A barrier is provided thereon; wherein the flexible substrate of the first barrier area is provided with a groove, and the flexible substrate of the display area is provided with an organic light emitting diode unit.
  • the depth of the groove ranges from 1 ⁇ m to 10 ⁇ m.
  • the groove is made by etching or embossing.
  • the organic light emitting diode display further includes:
  • a switch array layer, the switch array layer is located on the entire flexible substrate, and the switch array layer corresponding to the first blocking region also has a groove.
  • the cross-sectional shape of the groove is arc or trapezoid.
  • the organic light emitting diode display further includes:
  • a thin film encapsulation layer is located on the organic light emitting diode unit and the barrier.
  • the thin film encapsulation layer includes a stacked structure of a first inorganic layer, a first organic layer, and a second inorganic layer, wherein the first organic layer The thickness near the barrier side is greater than a preset value.
  • the first organic layer covers the display area and the first barrier area, and the first organic layer is located inside the barrier.
  • the material of the first inorganic layer includes but is not limited to SiN x , SiO x N y , SiO x , SiC x N y , ZnO, and AlO.
  • the material of the first organic layer includes, but is not limited to, Acrylate, HMDSO, polyacrylates, polycarbonates, and polystyrene.
  • the first inorganic layer covers the display area, and the outer boundary of the first inorganic layer exceeds the barrier.
  • the second inorganic layer covers the display area, and the outer boundary of the second inorganic layer exceeds the barrier.
  • the thickness of the flexible substrate ranges from 5 ⁇ m to 30 ⁇ m.
  • the organic light emitting diode display of the present invention by providing a groove on the flexible substrate between the display area and the barrier, thereby increasing the thickness of the organic layer on the side of the barrier, thereby improving the ability of the organic layer to coat particles, and improving Encapsulation effect.
  • FIG. 1 is a schematic structural diagram of an existing organic light emitting diode display
  • FIG. 2 is a schematic diagram of the first structure of the organic light emitting diode display of the present invention.
  • FIG. 3 is a schematic structural view of the first and second steps of the method for manufacturing the organic light emitting diode display in FIG. 2;
  • FIG. 4 is a schematic structural view of a third step of the method for manufacturing the organic light emitting diode display in FIG. 2;
  • FIG. 5 is a schematic structural view of the fourth step of the method for manufacturing the organic light emitting diode display in FIG. 2;
  • FIG. 6 is a schematic diagram of a second structure of the organic light emitting diode display of the present invention.
  • the existing organic light emitting diode display includes a flexible substrate 11, a switch array layer 12, and the switch array layer 12 is located on the flexible substrate 11, the flexible substrate 11 includes a display area, and the display area is completely flexible
  • An organic light emitting diode unit 13 is provided, and a thin film encapsulation layer covers the organic light emitting diode unit 13.
  • the thin film encapsulation layer includes a first inorganic layer 14, a first organic layer 15, and a second inorganic layer 16, and a barrier 17 is provided outside the display area.
  • the thickness of the first organic layer 15 near the barrier 17 is L1.
  • FIG. 2 is a schematic structural diagram of an organic light emitting diode display of the present invention.
  • the organic light emitting diode display of the present invention includes a flexible substrate 21, wherein the flexible substrate 21 includes a display area 101, a first blocking area 102, and a second blocking area 103, the first blocking area 102 is located at Between the display area 101 and the second barrier area 103, a barrier 27 is provided on the flexible substrate 21 of the second barrier area 103; wherein the flexible substrate 21 of the first barrier area 102 is provided The groove 211, wherein the opening of the groove 211 is upward.
  • An organic light emitting diode unit 23 is provided on the flexible substrate 21 of the display area 101.
  • the cross-sectional shape of the groove 211 is arc-shaped.
  • the depth of the groove 211 ranges from 1 ⁇ m to 10 ⁇ m. Since the depth of the groove is within this range, the thickness of the organic layer near the barrier can be better increased, and the coating ability of the particles can be further improved.
  • the organic light emitting diode display includes a switch array layer 22 that is located on the entire flexible substrate 21, and the switch array layer 22 corresponding to the first blocking region 102 also has a groove 221.
  • the organic light emitting diode display further includes: a thin film encapsulation layer on the organic light emitting diode unit 23 and the barrier 27, the thin film encapsulation layer includes a first inorganic layer 24, a first organic layer 25 and The stacked structure of the second inorganic layer 26, wherein the thickness L2 of the first organic layer 25 close to the barrier side 27 is greater than a preset value, and the preset value may be specifically set as needed.
  • the thickness of the side of the first organic layer 25 close to the barrier 27 is greater than a preset value, the coating ability of the particles can be improved. Comparing FIGS. 2 and 1, it is not difficult to see that the thickness of the first organic layer near the barrier side 27 increases, that is, L2 is greater than L1.
  • the first organic layer 25 covers the display area 101 and the first barrier area 102 and is located inside the barrier 27.
  • the thickness of the flexible substrate 21 ranges from 5 ⁇ m to 30 ⁇ m.
  • the manufacturing method of the organic light emitting diode display of the present invention includes:
  • the flexible substrate 21 includes a display area 101, a first barrier area 102 and a second barrier area 103.
  • a ring of grooves is pressed on the first barrier region 102 of the flexible substrate 21 through a mold or using traditional coating photoresist, exposure, development, etching and other processes Engraved a circle of groove 211.
  • the depth of the groove 211 ranges from 1 ⁇ m to 10 ⁇ m, and the cross-sectional shape is arc-shaped.
  • a switch array layer 22 is prepared on the flexible substrate 21.
  • the switch array layer 22 includes a plurality of switching elements.
  • the switch array layer 22 may include a gate, a channel, and source and drain, and may further include a planarization layer.
  • a buffer layer is also provided between the flexible substrate 21 and the switch array layer 22.
  • S104 Fabricate an organic light emitting diode unit and a barrier on the switch array layer 22 respectively.
  • an organic light emitting diode unit 23 and a barrier 27 are formed on the switch array layer 22;
  • the specific manufacturing process of the organic light emitting diode unit 23 is as follows: an anode, a pixel definition layer, etc. are formed on the switch array layer 22, and then an organic light emitting display layer and a cathode are deposited on the switch array layer 22, and the organic light emitting display layer includes hole injection / transport Layer, light emitting layer, electron transport / injection layer, etc.
  • the barrier 27 may be fabricated simultaneously with the planarization layer or the pixel definition layer.
  • the first inorganic layer 24 is deposited on the organic light emitting diode unit 23 by one of ALD, PLD, Sputter, and PECVD processes
  • a first organic layer 25 is deposited on an inorganic layer 24 by means of IJP, PECVD, slot coating, etc.
  • a second inorganic layer 26 is deposited on the first organic layer 25 by processes such as ALD, PLD, Sputter, PECVD, and the like.
  • the first inorganic material layer 24 include, but are not limited to SiN x, SiO x N y, SiO x, SiC x N y, ZnO and AlO, etc., an inorganic layer 24 covers the first display region 101, and the outer boundary of more than 27 barrier.
  • the material of the first organic layer 25 includes, but is not limited to, Acrylate, HMDSO, polyacrylates, polycarbonates, polystyrene, etc.
  • the first organic layer 25 covers the display area 101 and the outer boundary does not exceed the barrier 27.
  • the material of the second inorganic layer 26 includes, but is not limited to, SiNx, SiOxNy, SiOx, SiCxNy, ZnO, and AlOx.
  • the second inorganic layer 26 covers the display area 101 and the outer boundary exceeds the barrier 27.
  • the cross-sectional shape of the groove 211 is trapezoidal.
  • the cross-sectional shape of the groove 211 is not limited to the above shape, and may be other shapes.
  • the organic light emitting diode display of the present invention by providing a groove on the flexible substrate between the display area and the barrier, thereby increasing the thickness of the organic layer on the side of the barrier, thereby improving the ability of the organic layer to coat particles, and improving Encapsulation effect.

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种有机发光二极管显示器，该有机发光二极管显示器包括：柔性衬底，其包括显示区、第一阻挡区和第二阻挡区，所述第一阻挡区位于所述显示区和所述第二阻挡区之间，所述第二阻挡区的柔性衬底上设置有阻挡物；其中所述第一阻挡区的柔性衬底上设置有凹槽，所述显示区的柔性衬底上设置有有机发光二极管单元。

Description

一种有机发光二极管显示器 技术领域
本发明涉及显示技术领域，特别是涉及一种有机发光二极管显示器。
 背景技术
有机发光二极管（OLED）器件由于具有自发光、响应速度快、视角广、对比度高以及可挠曲等特点，得到了广泛的应用。OLED器件发光单元中的有机膜层对外界水氧特别敏感，因此需要较为严苛的封装条件来对器件进行保护。目前采用的是薄膜封装的方法，即采用无机/有机/无机多层膜交叠的方式对器件进行封装，延长水氧入侵路径，不仅可以达到阻隔水氧的目的，同时也能实现柔性显示的效果。
薄膜封装中的无机层起到阻隔水氧的作用，有机层则用来包覆前段制程产生的颗粒（particle）和缓解膜层弯曲时产生的应力。然而，由于有机层具有一定的流动性，为将其限制在特定区域内，一般会在显示区外围设置一圈或几圈阻挡物以阻挡有机层流动。
 技术问题
一般薄膜封装中有机层的成膜范围在阻挡物所围绕的区域内，导致在（靠近阻挡物的区域）边缘处会逐渐变薄，越靠近阻挡物，其厚度越薄，当颗粒在有机层制程之中或者之前掉落在此位置时，有机层就有可能无法全部包覆住颗粒，导致后续制程中的膜层被刺穿，进而降低了封装效果。
 技术解决方案
本发明的目的在于提供一种有机发光二极管显示器，能够提高有机层包覆颗粒的能力，提高了封装效果。
为解决上述技术问题，本发明提供一种有机发光二极管显示器，其包括：
柔性衬底，其包括显示区、第一阻挡区和第二阻挡区，所述第一阻挡区位于所述显示区和所述第二阻挡区之间，所述第二阻挡区的柔性衬底上设置有阻挡物；其中所述第一阻挡区的柔性衬底上设置有凹槽，所述显示区的柔性衬底上设置有有机发光二极管单元，所述凹槽的深度范围为1μm~10μm，所述有机发光二极管单元和所述阻挡物上设置有薄膜封装层，所述薄膜封装层包括第一无机层、第一有机层以及第二无机层的层叠结构，其中所述第一有机层中靠近所述阻挡物侧的厚度大于预设值。
在本发明的有机发光二极管显示器中，所述凹槽是通过刻蚀或者压印方式制得的。
在本发明的有机发光二极管显示器中，所述有机发光二极管显示器还包括：
开关阵列层，所述开关阵列层位于整个所述柔性衬底上，与所述第一阻挡区对应的开关阵列层也具有凹槽。
在本发明的有机发光二极管显示器中，所述凹槽的截面形状为弧形或者梯形。
在本发明的有机发光二极管显示器中，所述有机发光二极管显示器还包括：
所述第一有机层覆盖所述显示区和第一阻挡区，且所述第一有机层位于所述阻挡物的内侧。
在本发明的有机发光二极管显示器中，所述第一无机层的材料包括但不限于SiN x、SiO xN y、SiO x、SiC xN y、ZnO以及AlO。
在本发明的有机发光二极管显示器中，所述第一有机层的材料包括但不限于Acrylate、HMDSO、聚丙烯酸酯类、聚碳酸脂类以及聚苯乙烯。
在本发明的有机发光二极管显示器中，所述柔性衬底的厚度范围为5μm~30μm。
为解决上述技术问题，本发明提供一种有机发光二极管显示器，其包括：
柔性衬底，其包括显示区、第一阻挡区和第二阻挡区，所述第一阻挡区位于所述显示区和所述第二阻挡区之间，所述第二阻挡区的柔性衬底上设置有阻挡物；其中所述第一阻挡区的柔性衬底上设置有凹槽，所述显示区的柔性衬底上设置有有机发光二极管单元。
在本发明的有机发光二极管显示器中，所述凹槽的深度范围为1μm~10μm。
在本发明的有机发光二极管显示器中，所述凹槽是通过刻蚀或者压印方式制得的。
在本发明的有机发光二极管显示器中，所述有机发光二极管显示器还包括：
开关阵列层，所述开关阵列层位于整个所述柔性衬底上，与所述第一阻挡区对应的开关阵列层也具有凹槽。
在本发明的有机发光二极管显示器中，所述凹槽的截面形状为弧形或者梯形。
在本发明的有机发光二极管显示器中，所述有机发光二极管显示器还包括：
薄膜封装层，位于所述有机发光二极管单元和所述阻挡物上，所述薄膜封装层包括第一无机层、第一有机层以及第二无机层的层叠结构，其中所述第一有机层中靠近所述阻挡物侧的厚度大于预设值。
在本发明的有机发光二极管显示器中，所述第一有机层覆盖所述显示区和第一阻挡区，且所述第一有机层位于所述阻挡物的内侧。
在本发明的有机发光二极管显示器中，所述第一无机层的材料包括但不限于SiN x、SiO xN y、SiO x、SiC xN y、ZnO以及AlO。
在本发明的有机发光二极管显示器中，所述第一有机层的材料包括但不限于Acrylate、HMDSO、聚丙烯酸酯类、聚碳酸脂类以及聚苯乙烯。
在本发明的有机发光二极管显示器中，所述第一无机层覆盖所述显示区，且所述第一无机层的外边界超过所述阻挡物。
在本发明的有机发光二极管显示器中，所述第二无机层覆盖所述显示区，且所述第二无机层的外边界超过所述阻挡物。
在本发明的有机发光二极管显示器中，所述柔性衬底的厚度范围为5μm~30μm。
 有益效果
本发明的有机发光二极管显示器，通过在显示区和阻挡物之间的柔性衬底上设置凹槽，从而增大有机层靠近阻挡物侧的厚度，进而提高有机层包覆颗粒的能力，提高了封装效果。
 附图说明
图1为现有有机发光二极管显示器的结构示意图；
图2为本发明有机发光二极管显示器的第一种结构示意图；
图3为图2中的有机发光二极管显示器的制作方法第一步和第二步的结构示意图；
图4为图2中的有机发光二极管显示器的制作方法第三步的结构示意图；
图5为图2中的有机发光二极管显示器的制作方法第四步的结构示意图；
图6为本发明有机发光二极管显示器的第二种结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
如图1所示，现有的有机发光二极管显示器包括柔性衬底11、开关阵列层12、开关阵列层12位于柔性衬底11上，柔性衬底11包括显示区，显示区的柔性彻底11上设置有机发光二极管单元13，薄膜封装层覆盖有机发光二极管单元13，薄膜封装层包括第一无机层14、第一有机层15以及第二无机层16，在显示区的外侧设置有阻挡物17。第一有机层15靠近阻挡物17侧的厚度为L1。
请参照图2至6，图2为本发明有机发光二极管显示器的结构示意图。
如图2所示，本发明的有机发光二极管显示器包括柔性衬底21，其中柔性衬底21包括显示区101、第一阻挡区102和第二阻挡区103，所述第一阻挡区102位于所述显示区101和所述第二阻挡区103之间，所述第二阻挡区103的柔性衬底21上设置有阻挡物27；其中所述第一阻挡区102的柔性衬底21上设置有凹槽211，其中所述凹槽211的开口向上。所述显示区101的柔性衬底21上设置有有机发光二极管单元23。
在一实施方式中，所述凹槽211的截面形状为弧形。
结合图3，所述凹槽211的深度范围为1μm~10μm。由于凹槽的深度位于该范围内，能够更好地提高阻挡物附近的有机层的厚度，进一步提高颗粒的包覆能力。
结合图4，有机发光二极管显示器包括开关阵列层22，开关阵列层22位于整个所述柔性衬底21上，与所述第一阻挡区102对应的开关阵列层22也具有凹槽221。
返回图2，所述有机发光二极管显示器还包括：薄膜封装层，薄膜封装层位于有机发光二极管单元23和阻挡物27上，所述薄膜封装层包括第一无机层24、第一有机层25以及第二无机层26的层叠结构，其中所述第一有机层25中靠近所述阻挡物侧27的厚度L2大于预设值，预设值可以根据需要具体设定。当第一有机层25靠近阻挡物27侧的厚度大于预设值时，能够提高颗粒的包覆能力。对比图2和1，不难看出第一有机层靠近所述阻挡物侧27的厚度增大，也即L2大于L1。
所述第一有机层25覆盖所述显示区101和第一阻挡区102，且位于所述阻挡物27的内侧。
为了便于形成具有预设深度的凹槽，且不增加显示器的厚度，所述柔性衬底21的厚度范围为5μm~30μm。
本发明的有机发光二极管显示器的制作方法包括：
S101、先在玻璃基板20上制备一层柔性衬底21。
例如，如图3所示，柔性衬底21包括显示区101、第一阻挡区102和第二阻挡区103。
S102、通过刻蚀或者压印方式在所述柔性衬底21上制作凹槽。
例如，如图3所示，采用压印的方式，通过模具在柔性衬底21的第一阻挡区102上压制一圈凹槽或者采用传统的涂布光阻、曝光、显影、刻蚀等工艺刻出一圈凹槽211。
其中，该凹槽211的深度范围为1μm~10μm，截面形状为弧形。
S103、在柔性衬底21上制备开关阵列层22。
例如，如图4所示，开关阵列层22包括多个开关元件，开关阵列层22可包括栅极、沟道以及源极、漏极，还可包括平坦化层。柔性衬底21和开关阵列层22之间还设置有缓冲层。
S104、在开关阵列层22上分别制作有机发光二极管单元以及阻挡物。
例如，如图5所示，在开关阵列层22上制作有机发光二极管单元23和和阻挡物27；
有机发光二极管单元23的具体制作过程为：在开关阵列层22上制作阳极、像素定义层等，之后在开关阵列层22上沉积有机发光显示层和阴极，有机发光显示层包括空穴注入/传输层、发光层、电子传输/注入层等。
其中，阻挡物27也可以与平坦化层或者像素定义层同时制作。
S105、在有机发光二极管单元上制作薄膜封装层。
例如，返回图2，有机发光二极管单元23和和阻挡物27制备完成后，通过ALD、PLD、Sputter以及PECVD等工艺中的一种在有机发光二极管单元23上沉积第一无机层24、在第一无机层24上通过IJP、PECVD、slot coating等方式沉积第一有机层25，在第一有机层25之上通过ALD、PLD、Sputter、PECVD等工艺沉积第二无机层26。
第一无机层24的材料包括但不限于SiN x、SiO xN y、SiO x、SiC xN y、ZnO以及AlO等，第一无机层24覆盖显示区101，且外边界超过阻挡物27。
第一有机层25的材料包括但不限于Acrylate、HMDSO、聚丙烯酸酯类、聚碳酸脂类以及聚苯乙烯等，第一有机层25覆盖显示区101，且外边界不超过阻挡物27。
第二无机层26的材料包括但不限于SiNx、SiOxNy、SiOx、SiCxNy、ZnO以及AlOx等，第二无机层26覆盖显示区101，且外边界超过阻挡物27。
在另一实施方式中，如图6所示，所述凹槽211的截面形状为梯形。当然，该凹槽211的截面形状不限于以上的形状，还可以为其他形状。
本发明的有机发光二极管显示器，通过在显示区和阻挡物之间的柔性衬底上设置凹槽，从而增大有机层靠近阻挡物侧的厚度，进而提高有机层包覆颗粒的能力，提高了封装效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种有机发光二极管显示器，其包括：
    柔性衬底，其包括显示区、第一阻挡区和第二阻挡区，所述第一阻挡区位于所述显示区和所述第二阻挡区之间，所述第二阻挡区的柔性衬底上设置有阻挡物；其中所述第一阻挡区的柔性衬底上设置有凹槽，所述显示区的柔性衬底上设置有有机发光二极管单元，所述凹槽的深度范围为1μm~10μm，所述有机发光二极管单元和所述阻挡物上设置有薄膜封装层，所述薄膜封装层包括第一无机层、第一有机层以及第二无机层的层叠结构，其中所述第一有机层中靠近所述阻挡物侧的厚度大于预设值。
  2. 根据权利要求1所述的有机发光二极管显示器，其中所述凹槽是通过刻蚀或者压印方式制得的。
  3. 根据权利要求1所述的有机发光二极管显示器，其中所述有机发光二极管显示器还包括：
    开关阵列层，所述开关阵列层位于整个所述柔性衬底上，与所述第一阻挡区对应的开关阵列层也具有凹槽。
  4. 根据权利要求1所述的有机发光二极管显示器，其中
    所述凹槽的截面形状为弧形或者梯形。
  5. 根据权利要求1所述的有机发光二极管显示器，其中所述有机发光二极管显示器还包括：
    所述第一有机层覆盖所述显示区和第一阻挡区，且所述第一有机层位于所述阻挡物的内侧。
  6. 根据权利要求1所述的有机发光二极管显示器，其中所述第一无机层的材料包括但不限于SiNx、SiOxNy、SiOx、SiCxNy、ZnO以及AlO。
  7. 根据权利要求1所述的有机发光二极管显示器，其中所述第一有机层的材料包括但不限于Acrylate、HMDSO、聚丙烯酸酯类、聚碳酸脂类以及聚苯乙烯。
  8. 根据权利要求1所述的有机发光二极管显示器，其中所述柔性衬底的厚度范围为5μm~30μm。
  9. 一种有机发光二极管显示器，其包括：
    柔性衬底，其包括显示区、第一阻挡区和第二阻挡区，所述第一阻挡区位于所述显示区和所述第二阻挡区之间，所述第二阻挡区的柔性衬底上设置有阻挡物；其中所述第一阻挡区的柔性衬底上设置有凹槽，所述显示区的柔性衬底上设置有有机发光二极管单元。
  10. 根据权利要求9所述的有机发光二极管显示器，其中所述凹槽的深度范围为1μm~10μm。
  11. 根据权利要求9所述的有机发光二极管显示器，其中所述凹槽是通过刻蚀或者压印方式制得的。
  12. 根据权利要求9所述的有机发光二极管显示器，其中所述有机发光二极管显示器还包括：
    开关阵列层，所述开关阵列层位于整个所述柔性衬底上，与所述第一阻挡区对应的开关阵列层也具有凹槽。
  13. 根据权利要求9所述的有机发光二极管显示器，其中
    所述凹槽的截面形状为弧形或者梯形。
  14. 根据权利要求9所述的有机发光二极管显示器，其中所述有机发光二极管显示器还包括：
    薄膜封装层，位于所述有机发光二极管单元和所述阻挡物上，所述薄膜封装层包括第一无机层、第一有机层以及第二无机层的层叠结构，其中所述第一有机层中靠近所述阻挡物侧的厚度大于预设值。
  15. 根据权利要求14所述的有机发光二极管显示器，其中所述第一有机层覆盖所述显示区和第一阻挡区，且所述第一有机层位于所述阻挡物的内侧。
  16. 根据权利要求14所述的有机发光二极管显示器，其中所述第一无机层的材料包括但不限于SiNx、SiOxNy、SiOx、SiCxNy、ZnO以及AlO。
  17. 根据权利要求14所述的有机发光二极管显示器，其中所述第一有机层的材料包括但不限于Acrylate、HMDSO、聚丙烯酸酯类、聚碳酸脂类以及聚苯乙烯。
  18. 根据权利要求14所述的有机发光二极管显示器，其中所述第一无机层覆盖所述显示区，且所述第一无机层的外边界超过所述阻挡物。
  19. 根据权利要求14所述的有机发光二极管显示器，其中所述第二无机层覆盖所述显示区，且所述第二无机层的外边界超过所述阻挡物。
  20. 根据权利要求9所述的有机发光二极管显示器，其中所述柔性衬底的厚度范围为5μm~30μm。
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