WO2021017315A1 - 触控显示面板 - Google Patents

触控显示面板 Download PDF

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Publication number
WO2021017315A1
WO2021017315A1 PCT/CN2019/118481 CN2019118481W WO2021017315A1 WO 2021017315 A1 WO2021017315 A1 WO 2021017315A1 CN 2019118481 W CN2019118481 W CN 2019118481W WO 2021017315 A1 WO2021017315 A1 WO 2021017315A1
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Prior art keywords
layer
pixel definition
display panel
cathode
definition layer
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PCT/CN2019/118481
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English (en)
French (fr)
Inventor
谢铭
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/652,957 priority Critical patent/US11355560B2/en
Publication of WO2021017315A1 publication Critical patent/WO2021017315A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04102—Flexible digitiser, i.e. constructional details for allowing the whole digitising part of a device to be flexed or rolled like a sheet of paper
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • This application relates to the field of display technology, and in particular to a touch display panel.
  • Active matrix organic light emitting diode display panels (Active metrix organic light AMOLED) has attracted widespread attention.
  • Active matrix organic light-emitting diode display panels are gradually being used in full-screen display devices, bendable display devices, foldable display devices, and flexible display devices.
  • the thinning of the thickness of the flexible display device is a future development trend, and the thinner flexible display device is beneficial to the flexible application of the flexible display device and improves the reliability of the flexible display device.
  • the purpose of this application is to provide a touch display panel with a thinner thickness.
  • a touch display panel, the touch display panel includes:
  • a substrate having at least one light-emitting area and a non-light-emitting area located at the periphery of the light-emitting area;
  • An anode the anode is disposed on the substrate and located in the light-emitting area;
  • a first pixel definition layer and a second pixel definition layer, the first pixel definition layer and the second pixel definition layer are sequentially formed on the substrate, and at least one opening located above the anode extends along the first pixel
  • the thickness directions of the definition layer and the second pixel definition layer pass through the first pixel definition layer and the second pixel definition layer to define the light-emitting area of the substrate;
  • An organic functional layer is disposed on the anode and located in the opening;
  • An encapsulation layer is disposed on a side of the second pixel definition layer away from the substrate;
  • a plurality of touch units are arranged between the first pixel definition layer and the second pixel definition layer, and/or,
  • a plurality of the touch units are arranged between the second pixel definition layer and the encapsulation layer;
  • Both the first pixel definition layer and the second pixel definition layer are organic insulating layers.
  • a plurality of the touch units are disposed between the second pixel definition layer and the encapsulation layer
  • the touch display panel further includes a first cathode and a second cathode
  • the first cathode is disposed between the first pixel definition layer and the second pixel definition layer and is located in the non-luminous area
  • the second cathode is disposed between the organic functional layer and the encapsulation layer and Located in the light-emitting area, the first cathode and the second cathode are electrically connected through a via hole penetrating the second pixel definition layer.
  • the sum of the thicknesses of the first pixel definition layer and the second pixel definition layer ranges from 1.0 ⁇ m to 2.0 ⁇ m.
  • the thickness of the first pixel definition layer is smaller than the thickness of the second pixel definition layer.
  • the thickness of the first cathode is greater than the thickness of the second cathode.
  • the touch display panel further includes an anti-reflection protection layer, and the anti-reflection protection layer is disposed between the second cathode and the encapsulation layer.
  • the material of the second cathode is silver, and the material of the antireflection protection layer is selected from lithium fluoride.
  • each of the touch units includes a first electrode and a second electrode, the first electrode and the second electrode constitute a mutual capacitive touch electrode, and the second pixel definition layer Comprising a first pixel definition sublayer and a second pixel definition sublayer, the first pixel definition sublayer is disposed between the second pixel definition sublayer and the first pixel definition layer, and the first electrode is disposed Between the first pixel definition sublayer and the second pixel definition sublayer, the second electrode is disposed between the second pixel definition sublayer and the encapsulation layer.
  • the thickness of the first pixel defining sublayer is greater than the thickness of the second pixel defining sublayer.
  • a touch display panel, the touch display panel includes:
  • a substrate having at least one light-emitting area and a non-light-emitting area located at the periphery of the light-emitting area;
  • An anode the anode is disposed on the substrate and located in the light-emitting area;
  • a first pixel definition layer and a second pixel definition layer, the first pixel definition layer and the second pixel definition layer are sequentially formed on the substrate, and at least one opening located above the anode extends along the first pixel
  • the thickness directions of the definition layer and the second pixel definition layer pass through the first pixel definition layer and the second pixel definition layer to define the light-emitting area of the substrate;
  • An organic functional layer is disposed on the anode and located in the opening;
  • An encapsulation layer is disposed on a side of the second pixel definition layer away from the substrate;
  • a plurality of touch units are arranged between the first pixel definition layer and the second pixel definition layer, and/or,
  • a plurality of the touch control units are arranged between the second pixel definition layer and the encapsulation layer.
  • a plurality of the touch units are disposed between the second pixel definition layer and the encapsulation layer
  • the touch display panel further includes a first cathode and a second cathode
  • the first cathode is disposed between the first pixel definition layer and the second pixel definition layer and is located in the non-luminous area
  • the second cathode is disposed between the organic functional layer and the encapsulation layer and Located in the light-emitting area, the first cathode and the second cathode are electrically connected through a via hole penetrating the second pixel definition layer.
  • the sum of the thicknesses of the first pixel definition layer and the second pixel definition layer ranges from 1.0 ⁇ m to 2.0 ⁇ m.
  • the thickness of the first pixel definition layer is smaller than the thickness of the second pixel definition layer.
  • the thickness of the first cathode is greater than the thickness of the second cathode.
  • the touch display panel further includes an anti-reflection protection layer, and the anti-reflection protection layer is disposed between the second cathode and the encapsulation layer.
  • the material of the second cathode is silver, and the material of the antireflection protection layer is selected from lithium fluoride.
  • each of the touch units includes a first electrode and a second electrode, the first electrode and the second electrode constitute a mutual capacitive touch electrode, and the second pixel definition layer Comprising a first pixel definition sublayer and a second pixel definition sublayer, the first pixel definition sublayer is disposed between the second pixel definition sublayer and the first pixel definition layer, and the first electrode is disposed Between the first pixel definition sublayer and the second pixel definition sublayer, the second electrode is disposed between the second pixel definition sublayer and the encapsulation layer.
  • the thickness of the first pixel defining sublayer is greater than the thickness of the second pixel defining sublayer.
  • the present application provides a touch display panel, by disposing a plurality of touch units between a first pixel definition layer and a second pixel definition layer, and/or a plurality of touch units are disposed on the second pixel definition layer and Between the packaging layers, the touch display panel has a thinner thickness, so that the touch display panel can have dynamic bending performance, and the overall reliability of the touch display panel is improved.
  • FIG. 1 is a schematic structural diagram of a touch display panel according to the first embodiment of the application
  • FIG. 2 is a schematic diagram of the structure of the touch display panel according to the second embodiment of the application.
  • FIG. 1 is a schematic diagram of the structure of the touch display panel according to the first embodiment of the application.
  • the touch display panel includes a substrate 10, a passivation layer 11, a planarization layer 12, an anode 13, a first pixel definition layer 141, a second pixel definition layer 142, an organic functional layer 15, an encapsulation layer 16, and a plurality of touch units 17 , Polarizing layer 18 and cover plate 19.
  • the substrate 10 includes a substrate and a plurality of thin film transistor array layers arrayed on the substrate, that is, the substrate is a thin film transistor array substrate.
  • the thin film transistor layer is used to control the working state of the light emitting device.
  • the substrate is a flexible transparent substrate, such as a polyimide substrate.
  • the thin film transistor may be a polysilicon thin film transistor, a metal oxide thin film transistor, and the like.
  • the substrate 10 has at least one light-emitting area 10a and a non-light-emitting area 10b located at the periphery of the light-emitting area 10a.
  • the thin film transistor is disposed in the non-light emitting area 10b of the substrate 10.
  • the passivation layer 11 is formed on the surface of the substrate 10, and the passivation layer 11 is used to block ions in the organic layer to prevent the ions from entering the thin film transistor and affecting the electrical performance of the thin film transistor.
  • the passivation layer 11 is an inorganic insulating layer.
  • the preparation material of the passivation layer 11 is selected from at least one of silicon nitride and silicon oxide.
  • the planarization layer 12 is formed on the side of the passivation layer 11 away from the substrate 10.
  • the planarization layer 12 is used to make the surface of the substrate 10 on which the thin film transistor layer is formed more smooth.
  • the smooth surface is conducive to the formation of the subsequently formed light-emitting devices. surface.
  • the planarization layer 12 is an organic insulating layer.
  • the preparation material of the planarization layer 12 is selected from polyimide, polyacrylate, polypropylene-based resin and the like.
  • the thickness of the planarization layer 12 is 1 ⁇ m-2 ⁇ m.
  • the anode 13 is disposed on the substrate 10 and located in the light-emitting area 10a. Specifically, the anode 13 is disposed on the planarization layer 12 and located in the light-emitting area 10a. The anode 13 is used to output holes to the organic light emitting layer.
  • the anode 13 is an opaque electrode or a semi-transparent electrode.
  • the preparation materials of the anode 13 include, but are not limited to, indium tin oxide, indium zinc oxide, and silver.
  • the first pixel definition layer 141 and the second pixel definition layer 142 are used to define the light-emitting area of the touch display panel.
  • the first pixel definition layer 141 and the second pixel definition layer 142 are sequentially formed on the substrate 10, and at least one opening 14a located above the anode 13 penetrates the first pixel along the thickness direction of the first pixel definition layer 141 and the second pixel definition layer 142
  • the definition layer 141 and the second pixel definition layer 142 define the light-emitting area 10 a of the substrate 10.
  • the first pixel definition layer 141 and the second pixel definition layer 142 are sequentially formed on the planarization layer 12.
  • the opening 14 a penetrates the first pixel definition layer 141 and the second pixel definition layer 142 along the thickness direction of the first pixel definition layer 141 and the second pixel definition layer 142 to define the light-emitting region 10 a of the substrate 10.
  • the longitudinal section of the opening 14a is an inverted trapezoid.
  • the preparation materials of the first pixel definition layer 141 and the second pixel definition layer 142 may be the same or different.
  • the first pixel definition layer 141 and the second pixel definition layer 142 are both organic insulating layers, and the materials of both are selected from polyimide, polyacrylate and the like.
  • the thickness of the first pixel definition layer 141 ranges from 0.2 ⁇ m to 2 ⁇ m.
  • the thickness of the second pixel definition layer 142 ranges from 0.2 ⁇ m to 2 ⁇ m.
  • the organic functional layer 15 includes an organic light-emitting layer.
  • the organic light emitting layer emits visible light to display an image.
  • the organic functional layer 15 may also include a hole transport layer, a hole injection layer, an electron transport layer, an electron injection layer, and the like.
  • the organic functional layer 15 is disposed on the anode 13 and located in the opening 14a.
  • the encapsulation layer 16 is used to encapsulate the organic functional layer 15 to protect the organic functional layer 15 and prevent water vapor and oxygen from corroding the organic functional layer 15.
  • the encapsulation layer 16 is disposed on the side of the second pixel definition layer 142 away from the substrate 10.
  • the encapsulation layer 16 includes two inorganic layers and an organic layer located between the two inorganic layers.
  • the inorganic layer has a good barrier effect on water vapor and oxygen.
  • the organic layer has good flexibility and can increase the diffusion path of water vapor and oxygen.
  • the encapsulation layer 16 can prevent the diffusion of water vapor and oxygen to the organic functional layer 15.
  • the multiple touch units 17 are used to receive touch signals to convert them into electrical signals.
  • the multiple touch units 17 are disposed between the first pixel definition layer 141 and the second pixel definition layer 142, and/or the multiple touch units 17 are disposed between the second pixel definition layer 142 and the encapsulation layer 16. Specifically, a plurality of touch units 17 are disposed between the second pixel definition layer 142 and the encapsulation layer 16.
  • Each touch unit 17 is a self-capacitive touch electrode. It can be understood that the touch unit 17 may also be disposed between the first pixel definition layer 141 and the second pixel definition layer 142.
  • a plurality of touch units 17 are arranged between the first pixel definition layer 141 and the second pixel definition layer 142 , And/or, a plurality of touch units 17 are arranged between the second pixel definition layer 142 and the encapsulation layer 16, so that the touch display panel has a thinner thickness, and the touch display panel can have dynamic bending performance.
  • the dynamic bending performance improves the overall reliability of the touch display panel.
  • the multiple touch units 17 of this embodiment can be formed before the organic functional layer 15 is formed, that is, In the manufacturing process, a plurality of touch units 17 can be formed under high temperature conditions first, and then organic functional layers can be formed under low temperature conditions, so that the high temperature environment for preparing the touch units 17 can prevent the organic functional layer 15 from being damaged while reducing the process difficulty.
  • the polarizing layer 18 is disposed on the side of the packaging layer 16 away from the substrate 10.
  • the polarizing layer 18 is used to convert natural light into polarized light.
  • the cover plate 19 is a flexible cover plate, the cover plate 19 plays a role of protecting the polarizing layer and the following film layers, and the cover plate 19 may be a flexible polyimide layer.
  • the touch display panel further includes a first cathode 201 and a second cathode 202.
  • the first cathode 201 is disposed between the first pixel definition layer 141 and the second pixel definition layer 142 and is located in the non-light emitting region 10b.
  • the second cathode 202 is disposed between the organic functional layer 15 and the encapsulation layer 16 and is located in the light-emitting area 10a.
  • the first cathode 201 and the second cathode 202 are electrically connected through a via hole penetrating the second pixel definition layer 142.
  • the second cathode 202 is a transparent electrode, so that the light emitted by the organic light-emitting layer is reflected by the anode 13 and emitted.
  • the preparation material of the second cathode 202 may be indium tin oxide, indium zinc oxide, silver, or the like.
  • the preparation material of the first cathode 201 may be indium tin oxide, indium zinc oxide, silver, or the like.
  • the thickness of the first cathode 201 is greater than the thickness of the second cathode 202, so that the light passing through the second cathode 202 has a higher transmittance, that is, the transmittance of the light-emitting region 10a is increased, and the first cathode 201
  • the first cathode 201 To reduce the overall resistance of the cathode formed by the first cathode 201 and the second cathode 202, and prevent the cathode formed by the first cathode 201 and the second cathode 202 from having a significant resistance voltage drop, which may result in different touch display panels.
  • the luminous brightness of the area is different.
  • both the first cathode 201 and the second cathode 202 are metal layers, and the thickness of the metal layer is between 120 nanometers and 250 nanometers.
  • the thickness of the cathode 202 is 170 nanometers
  • the thickness of the first cathode 201 is 250 nanometers
  • the first cathode 201 is a thicker metal to further avoid the problem of resistance voltage drop.
  • the touch display panel further includes an anti-reflection protection layer 21.
  • the anti-reflection protection layer 21 is used to protect the second cathode 202 on the one hand to prevent the second cathode 202 from being corroded by external water vapor and oxygen, and on the other hand to increase The transmittance of light emitted by the organic light-emitting layer.
  • the anti-reflection protection layer 21 is disposed between the second cathode 202 and the encapsulation layer 16. Specifically, when the preparation material of the second cathode 202 is silver, the preparation material of the antireflection protection layer 21 is lithium fluoride.
  • the formation of the antireflection protection layer 21 can prevent the second cathode 202 from being oxidized or corroded before the encapsulation layer 16 is formed.
  • the sum of the thickness of the first pixel definition layer 141 and the second pixel definition layer 142 is 1.0 ⁇ m-2.0 ⁇ m, that is, the thickness of the first pixel definition layer 141 and the second pixel definition layer 142 is equal to that of a conventional one pixel definition layer
  • the thickness of the second pixel definition layer 142 is too thick to avoid the depth of the penetration opening 14a being too deep, which is not suitable for the thickness of the organic functional layer 15, and it can avoid the thickness of the second pixel definition layer 142 from being too thick, resulting in the via hole penetrating the second pixel definition layer 142
  • the wire breakage can also ensure that the touch unit is set without increasing the thickness of the pixel definition layer, thereby further reducing the thickness of the touch display panel.
  • the thickness of the first pixel definition layer 141 is smaller than the thickness of the second pixel definition layer 142, so that the distance between the multiple touch units 17 and the first cathode 201 is large, and the distance between the first cathode 201 and the multiple touch The unit 17 is too close to affect the electrical performance of the touch unit 17.
  • FIG. 2 is a schematic structural diagram of a touch display panel according to a second embodiment of the application.
  • the second pixel definition layer 142 of the touch display panel shown in FIG. 2 includes a first pixel definition sublayer 1421 and a second pixel definition sublayer 1422.
  • the first pixel definition sublayer 1421 is disposed on the second pixel definition sublayer 1422 and the second pixel definition sublayer 1422.
  • a pixel defines between the layers 141.
  • Each touch unit 17 includes a first electrode 171 and a second electrode 172, and the first electrode 171 and the second electrode 172 constitute a mutual capacitive touch electrode.
  • the first electrode 171 is disposed between the first pixel definition sublayer 1421 and the second pixel definition sublayer 1422, and the second electrode 172 is disposed between the second pixel definition sublayer 1422 and the encapsulation layer 16.
  • the touch display panel shown in FIG. 2 has the same other components as the touch display panel shown in FIG. 1, and will not be described in detail here.
  • the thickness of the first pixel defining sublayer 1421, the second pixel defining sublayer 1422, and the first pixel defining layer 141 may be equal to each other.
  • the first pixel defining sublayer 1421, the second pixel defining sublayer 1422, and the first pixel defining layer 141 The value of the sum of thickness ranges from 1 micron to 2 microns.
  • the thickness of the first pixel defining sublayer 1421 is greater than the thickness of the second pixel defining sublayer 1422, so that the distance between the first electrode 171 and the second electrode 172 is smaller than the distance between the first electrode 171 and the first cathode 201 The distance of ⁇ is further prevented from affecting the first electrode 171 by the first cathode 201 and affecting the touch performance of the mutual capacitive touch electrode.
  • the first electrode 171 and the second electrode 172 are both metal grids, the first electrode 171 can be a prismatic metal grid arranged in a row array, and the second electrode 172 can be a prismatic metal grid arranged in a column array. .
  • the vertical projection of the prismatic metal grid in the row of the first electrode 171 on the substrate 10 and the vertical projection of the prismatic metal grid in the column of the second electrode 172 on the substrate 10 are perpendicular to each other.
  • the first electrode 171 may be a metal layer composed of titanium/aluminum/titanium
  • the second electrode 172 may be a titanium/aluminum/titanium layer.
  • the first electrode 171 and the second electrode 172 can also be made of silver wire or a transparent conductive material.
  • the present application also provides a manufacturing method of the touch display panel shown in FIG. 2, which includes the following steps:
  • the thin film transistor array substrate includes a substrate, a thin film transistor array layer, a passivation layer, and a planarization layer.
  • the thin film transistor array layer is formed on one surface of the substrate, the passivation layer is formed on the surface of the thin film transistor array layer away from the substrate, and the planarization layer is formed on the surface of the passivation layer away from the substrate.
  • the planarization layer and passivation The same position on the layer is provided with a via hole penetrating the planarization layer and the passivation layer.
  • the substrate has at least one light-emitting area and a non-light-emitting area at the periphery of the light-emitting area.
  • the thin film transistor is arranged in the non-light emitting area of the substrate.
  • S11 An anode is formed on the planarization layer.
  • the first conductive layer formed on the entire surface of the planarization layer is patterned to form an anode through a yellowing process and an etching process, and the first conductive layer covers the planarization layer and the passivation layer
  • the upper via hole is electrically connected to the drain electrode of the thin film transistor array layer.
  • the first pixel definition layer covering the planarization layer and the anode is formed by coating, and the first opening is formed through the yellow light process.
  • the first opening is arranged above the anode to expose part of the anode to define the substrate Light-emitting area.
  • the second conductive layer covering the first pixel definition layer and the anode is formed by vacuum evaporation, and the yellow light process and etching process are used to remove the second conductive layer in the light-emitting area to form the first cathode.
  • the preparation material of the first cathode is selected from indium tin oxide, indium zinc oxide, silver and the like.
  • the first cathode is a metal layer of 120 nm to 250 nm, for example, a silver layer of 250 nm.
  • the distance between the first cathode near the edge of the first opening and the first opening is 3 ⁇ m-5 ⁇ m.
  • the temperature for forming the entire silver layer is 250°C.
  • the first pixel definition sublayer covering the first pixel definition layer, the first cathode and the anode is formed by coating, and the second opening is formed by the yellow light process, and the second opening is arranged corresponding to the first opening.
  • the second opening communicates with the first opening.
  • the third conductive layer covering the first pixel definition sublayer and the anode is formed by chemical vapor deposition, sputtering deposition, etc., and the third conductive layer is patterned by a yellowing process and an etching process to form the first electrode.
  • the first electrode is a prismatic metal grid.
  • the composition of the first electrode is titanium layer/aluminum layer/titanium layer, wherein the thickness of the titanium layer is 0.05 microns, the thickness of the aluminum layer is 0.6 microns, and the thickness of the first electrode is 0.7 Micrometers.
  • the line width of the first electrode is 3 microns.
  • the second pixel definition sublayer covering the first pixel definition sublayer, the first electrode and the anode is formed by coating, and the third opening is formed by the yellow light process.
  • the third opening is arranged corresponding to the second opening.
  • the three openings communicate with the second opening.
  • the first opening, the second opening and the third opening constitute an opening, and the longitudinal section of the opening is an inverted trapezoid.
  • the fourth conductive layer covering the second pixel definition sublayer and the anode is formed by chemical vapor deposition, sputtering deposition, etc., and the fourth conductive layer is patterned by a yellowing process and an etching process to form the second electrode.
  • the composition and structure of the fourth conductive layer are the same as those of the third conductive layer.
  • the second electrode is a prismatic metal grid, and the composition of the second electrode is titanium layer/aluminum layer/titanium layer, wherein the thickness of the titanium layer is 0.05 microns, the thickness of the aluminum layer is 0.6 microns, and the thickness of the first electrode is 0.7 Micrometers.
  • the line width of the second electrode is 3 microns.
  • a yellow light process is used to produce via holes that penetrate the first pixel definition sublayer and the second pixel definition sublayer and are located on both sides of the opening.
  • vacuum evaporation is used to sequentially form a hole transport layer, a hole injection layer, an organic light emitting layer, an electron injection layer, and an electron transport layer on the anode and in the opening.
  • a fine mask is used and vacuum evaporation is used to form a second cathode on the organic functional layer and in the via holes that penetrate the first pixel sub-definition layer and the second pixel definition sub-layer.
  • the second cathode in the via hole is electrically connected to the first cathode.
  • the second cathode is a 170 nm silver layer.
  • a lithium fluoride layer is formed on the surface of the second cathode to protect the second cathode and increase the transmittance of light in the light-emitting area.
  • S23 A polarizing layer and a cover plate are sequentially arranged on the packaging layer.

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Abstract

本申请提供一种触控显示面板，通过将多个触控单元设置于第一像素定义层和第二像素定义层之间，和/或，多个触控单元设置于第二像素定义层和封装层之间，以使得触控显示面板具有更薄的厚度。

Description

触控显示面板 技术领域
本申请涉及显示技术领域，尤其涉及一种触控显示面板。
 背景技术
目前，随着显示技术的快速发展，主动矩阵式有机发光二极管显示面板（Active metrix organic light emitting diode display，AMOLED）引起了人们的广泛关注，主动矩阵式有机发光二极管显示面板逐渐应用于全面屏显示装置、可弯折显示装置、可折叠显示装置以及柔性显示装置。其中，柔性显示装置的厚度变薄是未来的发展趋势，厚度薄的柔性显示装置有利于柔性显示装置的灵活应用，并使得柔性显示装置的可靠性能得到提升。
主动矩阵式有机发光二极管显示面板应用于柔性显示装置时，如何使主动矩阵式有机发光二极管显示面板的厚度变薄以降低柔性显示装置的厚度是需要解决的问题。
 技术问题
本申请的目的在于提供一种触控显示面板，该触控显示面板具有更薄的厚度。
 技术解决方案
一种触控显示面板，所述触控显示面板包括：
基板，所述基板具有至少一发光区和位于所述发光区外围的非发光区；
阳极，所述阳极设置于所述基板上且位于所述发光区；
第一像素定义层和第二像素定义层，所述第一像素定义层和所述第二像素定义层依次形成于所述基板上，至少一位于所述阳极上方的开口沿所述第一像素定义层和所述第二像素定义层的厚度方向贯穿所述第一像素定义层和所述第二像素定义层以定义所述基板的所述发光区；
有机功能层，所述有机功能层设置于所述阳极上且位于所述开口内；
封装层，所述封装层设置于所述第二像素定义层远离所述基板的一侧；以及
多个触控单元，多个所述触控单元设置于所述第一像素定义层和所述第二像素定义层之间，和/或，
多个所述触控单元设置于所述第二像素定义层和所述封装层之间；
所述第一像素定义层和所述第二像素定义层均为有机绝缘层。
在上述触控显示面板中，多个所述触控单元设置于所述第二像素定义层和所述封装层之间，所述触控显示面板还包括第一阴极和第二阴极，所述第一阴极设置于所述第一像素定义层和所述第二像素定义层之间且位于所述非发光区，所述第二阴极设置于所述有机功能层和所述封装层之间且位于所述发光区，所述第一阴极和所述第二阴极通过贯穿所述第二像素定义层的过孔电性连接。
在上述触控显示面板中，所述第一像素定义层和所述第二像素定义层的厚度之和的取值范围为1.0微米-2.0微米。
在上述触控显示面板中，所述第一像素定义层的厚度小于所述第二像素定义层的厚度。
在上述触控显示面板中，所述第一阴极的厚度大于所述第二阴极的厚度。
在上述触控显示面板中，所述触控显示面板还包括增透保护层，所述增透保护层设置于所述第二阴极和所述封装层之间。
在上述触控显示面板中，所述第二阴极的制备材料为银，所述增透保护层的制备材料选自氟化锂。
在上述触控显示面板中，每个所述触控单元包括第一电极和第二电极，所述第一电极和所述第二电极构成互容式触控电极，所述第二像素定义层包括第一像素定义子层和第二像素定义子层，所述第一像素定义子层设置于所述第二像素定义子层和所述第一像素定义层之间，所述第一电极设置于所述第一像素定义子层和所述第二像素定义子层之间，所述第二电极设置于所述第二像素定义子层和所述封装层之间。
在上述触控显示面板中，所述第一像素定义子层的厚度大于所述第二像素定义子层的厚度。
一种触控显示面板，所述触控显示面板包括：
基板，所述基板具有至少一发光区和位于所述发光区外围的非发光区；
阳极，所述阳极设置于所述基板上且位于所述发光区；
第一像素定义层和第二像素定义层，所述第一像素定义层和所述第二像素定义层依次形成于所述基板上，至少一位于所述阳极上方的开口沿所述第一像素定义层和所述第二像素定义层的厚度方向贯穿所述第一像素定义层和所述第二像素定义层以定义所述基板的所述发光区；
有机功能层，所述有机功能层设置于所述阳极上且位于所述开口内；
封装层，所述封装层设置于所述第二像素定义层远离所述基板的一侧；以及
多个触控单元，多个所述触控单元设置于所述第一像素定义层和所述第二像素定义层之间，和/或，
多个所述触控单元设置于所述第二像素定义层和所述封装层之间。
在上述触控显示面板中，多个所述触控单元设置于所述第二像素定义层和所述封装层之间，所述触控显示面板还包括第一阴极和第二阴极，所述第一阴极设置于所述第一像素定义层和所述第二像素定义层之间且位于所述非发光区，所述第二阴极设置于所述有机功能层和所述封装层之间且位于所述发光区，所述第一阴极和所述第二阴极通过贯穿所述第二像素定义层的过孔电性连接。
在上述触控显示面板中，所述第一像素定义层和所述第二像素定义层的厚度之和的取值范围为1.0微米-2.0微米。
在上述触控显示面板中，所述第一像素定义层的厚度小于所述第二像素定义层的厚度。
在上述触控显示面板中，所述第一阴极的厚度大于所述第二阴极的厚度。
在上述触控显示面板中，所述触控显示面板还包括增透保护层，所述增透保护层设置于所述第二阴极和所述封装层之间。
在上述触控显示面板中，所述第二阴极的制备材料为银，所述增透保护层的制备材料选自氟化锂。
在上述触控显示面板中，每个所述触控单元包括第一电极和第二电极，所述第一电极和所述第二电极构成互容式触控电极，所述第二像素定义层包括第一像素定义子层和第二像素定义子层，所述第一像素定义子层设置于所述第二像素定义子层和所述第一像素定义层之间，所述第一电极设置于所述第一像素定义子层和所述第二像素定义子层之间，所述第二电极设置于所述第二像素定义子层和所述封装层之间。
在上述触控显示面板中，所述第一像素定义子层的厚度大于所述第二像素定义子层的厚度。
 有益效果
本申请提供一种触控显示面板，通过将多个触控单元设置于第一像素定义层和第二像素定义层之间，和/或，多个触控单元设置于第二像素定义层和封装层之间，以使得触控显示面板具有更薄的厚度，使得触控显示面板可以具有动态弯折性能，提升触控显示面板的整体可靠性能。
 附图说明
图1为本申请第一实施例触控显示面板的结构示意图；
图2为本申请第二实施例触控显示面板的结构示意图。
附图标示如下：
10基板；10a发光区；10b 非发光区； 11钝化层；12平坦化层；13阳极；141第一像素定义层；142 第二像素定义层；14a开口； 1421 第一像素定义子层； 1422第二像素定义子层；15有机功能层； 16封装层； 17 触控单元；171第一电极；172第二电极；18 偏光层； 19盖板；201第一阴极； 202第二阴极；21 增透保护层。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图1，其为本申请第一实施例触控显示面板的结构示意图。触控显示面板包括基板10、钝化层11、平坦化层12、阳极13、第一像素定义层141、第二像素定义层142、有机功能层15、封装层16、多个触控单元17、偏光层18以及盖板19。
基板10包括一衬底以及多个阵列设置于衬底上的薄膜晶体管阵列层，即基板为薄膜晶体管阵列基板。薄膜晶体管层用于控制发光器件的工作状态。衬底为柔性透明基板，例如聚酰亚胺基板。薄膜晶体管可以多晶硅薄膜晶体管、金属氧化物薄膜晶体管等。基板10具有至少一发光区10a和位于发光区10a外围的非发光区10b。薄膜晶体管设置于基板10的非发光区10b。
钝化层11形成于基板10的表面，钝化层11用于阻挡有机层中的离子，以避免离子进入薄膜晶体管中而影响薄膜晶体管的电性能。钝化层11为无机绝缘层。钝化层11的制备材料选自氮化硅以及氧化硅中的至少一种。
平坦化层12形成于钝化层11远离基板10的一侧，平坦化层12用于使形成有薄膜晶体管层的基板10表面更加平整，平整的表面有利于后续形成的发光器件形成于平整的表面。平坦化层12为有机绝缘层。平坦化层12的制备材料选自聚酰亚胺、聚丙烯酸酯、聚丙烯基树脂等。平坦化层12的厚度为1微米-2微米。
阳极13设置于基板10上且位于发光区10a。具体地，阳极13设置于平坦化层12上且位于发光区10a。阳极13用于输出空穴至有机发光层。阳极13为不透明电极或半透明电极。阳极13的制备材料包括但不限于氧化铟锡、氧化铟锌以及银等。
第一像素定义层141和第二像素定义层142用于定义触控显示面板的发光区。第一像素定义层141和第二像素定义层142依次形成于基板10上，至少一位于阳极13上方的开口14a沿第一像素定义层141和第二像素定义层142的厚度方向贯穿第一像素定义层141和第二像素定义层142以定义基板10的发光区10a。
具体地，第一像素定义层141和第二像素定义层142依次形成于平坦化层12上。开口14a沿第一像素定义层141和第二像素定义层142的厚度方向贯穿第一像素定义层141和第二像素定义层142以定义基板10的发光区10a。开口14a的纵截面为倒梯形。第一像素定义层141和第二像素定义层142的制备材料可以相同，也可以不同。第一像素定义层141和第二像素定义层142均为有机绝缘层，两者的制备材料选自聚酰亚胺、聚丙烯酸酯等。第一像素定义层141的厚度的取值范围为0.2微米-2微米。第二像素定义层142的厚度的取值范围为0.2微米-2微米。
有机功能层15包括有机发光层。有机发光层发出可见光以显示图像。有机功能层15还可以包括空穴传输层、空穴注入层、电子传输层以及电子注入层等。有机功能层15设置于阳极13上且位于开口14a内。
封装层16用于封装有机功能层15，以起到保护有机功能层15的作用，避免水蒸气以及氧气等侵蚀有机功能层15。封装层16设置于第二像素定义层142远离基板10的一侧。封装层16包括两无机层以及位于两无机层之间的一有机层，无机层对水蒸气以及氧气具有良好的阻隔作用，有机层具有良好的柔性且能增加水蒸气以及氧气扩散的路径，故封装层16能避免水蒸气以及氧气扩散至有机功能层15。
多个触控单元17用于接收触控信号以转化为电信号。多个触控单元17设置于第一像素定义层141和第二像素定义层142之间，和/或，多个触控单元17设置于第二像素定义层142和封装层16之间。具体地，多个触控单元17设置于第二像素定义层142和封装层16之间。每个触控单元17为自容式触控电极。可以理解的是，触控单元17也可以设置于第一像素定义层141和第二像素定义层142之间。相对于传统技术将单独的触控层设置于封装层外侧，即外挂式触控层，本实施例将多个触控单元17设置于第一像素定义层141和第二像素定义层142之间，和/或，多个触控单元17设置于第二像素定义层142和封装层16之间，使得触控显示面板具有更薄的厚度，使触控显示面板可以具有动态弯折性能，良好的动态弯折性能提升触控显示面板的整体可靠性能；相对于传统技术将触控单元设置于封装层内，本实施例多个触控单元17可以形成于有机功能层15形成之前，即在制程上可以先高温条件下形成多个触控单元17，再在低温条件下形成有机功能层，降低工艺难度的情况下，避免制备触控单元17的高温环境对有机功能层15造成损害。
偏光层18设置于封装层16远离基板10的一侧。偏光层18用于将自然光转化为偏振光。盖板19为柔性盖板，盖板19起到保护偏光层及以下膜层的作用，盖板19可以为柔性聚酰亚胺层。
触控显示面板还包括第一阴极201和第二阴极202。第一阴极201设置于第一像素定义层141和第二像素定义层142之间且位于非发光区10b。第二阴极202设置于有机功能层15和封装层16之间且位于发光区10a。第一阴极201和第二阴极202通过贯穿第二像素定义层142的过孔电性连接。第二阴极202为透明电极，以使得有机发光层发出的光经阳极13反射后发出。第二阴极202的制备材料可以氧化铟锡、氧化铟锌、银等。第一阴极201的制备材料可以为氧化铟锡、氧化铟锌、银等。相较于于第二像素定义层142上形成整面阴极，且在第二像素定义层142以下形成触控单元，在第一像素定义层141上形成第一阴极201，且在第二像素定义层142上形成多个触控单元，能避免阴极对触控单元造成电信号干扰。
进一步地，第一阴极201的厚度大于第二阴极202的厚度，以使得穿过第二阴极202的光具有更高的透光率，即提高发光区10a的透光率，且第一阴极201的厚度较大，以降低第一阴极201和第二阴极202构成的阴极的整体电阻，避免第一阴极201和第二阴极202构成的阴极出现明显的电阻压降，而导致触控显示面板不同区域的发光亮度不同。为了提高第一阴极201和第二阴极202的导电性，第一阴极201和第二阴极202均为金属层，金属层的厚度为120纳米-250纳米，例如均为纳米级银层，第二阴极202的厚度为170纳米，第一阴极201的厚度为250纳米，第一阴极201为厚度较厚的金属进一步地避免出现电阻压降的问题。
进一步地，触控显示面板还包括增透保护层21，增透保护层21一方面用于保护第二阴极202，避免第二阴极202被外界水蒸气以及氧气所侵蚀，另一方面用于增加有机发光层发出的光的透光率。增透保护层21设置于第二阴极202和封装层16之间。具体地，第二阴极202的制备材料为银时，增透保护层21的制备材料为氟化锂。由于形成第二阴极202之后，需要经过一段时间才能形成封装层16，形成增透保护层21可以避免第二阴极202在形成封装层16之前被氧化或被腐蚀。
进一步地，第一像素定义层141和第二像素定义层142的厚度之和为1.0微米-2.0微米，即第一像素定义层141和第二像素定义层142的厚度等于传统一层像素定义层的厚度，以避免贯穿开口14a的深度太深，而不适应于有机功能层15的厚度，且能避免第二像素定义层142的厚度太厚而导致贯穿第二像素定义层142的过孔中的导线断裂，还能保证不增加像素定义层的厚度的条件下设置触控单元，从而进一步使触控显示面板变更薄。
更进一步地，第一像素定义层141的厚度小于第二像素定义层142的厚度，以使得多个触控单元17与第一阴极201之间间距大，避免第一阴极201距离多个触控单元17距离太近而影响触控单元17的电性能。
请参阅图2，其为本申请第二实施例触控显示面板的结构示意图。图2所示触控显示面板的第二像素定义层142包括第一像素定义子层1421和第二像素定义子层1422，第一像素定义子层1421设置于第二像素定义子层1422和第一像素定义层141之间。每个触控单元17包括第一电极171和第二电极172，第一电极171和第二电极172构成互容式触控电极。第一电极171设置于第一像素定义子层1421和第二像素定义子层1422之间，第二电极172设置于第二像素定义子层1422和封装层16之间。图2所示触控显示面板与图1所示触控显示面板的其他组成相同，此处不作详述。
第一像素定义子层1421、第二像素定义子层1422以及第一像素定义层141的厚度可以彼此相等，第一像素定义子层1421、第二像素定义子层1422以及第一像素定义层141的厚度之和的取值范围为1微米-2微米。进一步地，第一像素定义子层1421的厚度大于第二像素定义子层1422的厚度，以使得第一电极171和第二电极172之间的距离小于第一电极171与第一阴极201之间的间距，进一步地避免第一阴极201对第一电极171造成影响而影响互容式触控电极的触控性能。
第一电极171和第二电极172均为金属网格，第一电极171可以为按行阵列排布的棱形金属网格，第二电极172可以为按列阵列排布的棱形金属网格。第一电极171所在行的棱形金属网格在基板10上的垂直投影与第二电极172所在列的棱形金属网格在基板10上的垂直投影互相垂直。第一电极171可以为钛/铝/钛组成的金属层，第二电极172可以为钛/铝/钛层。第一电极171和第二电极172也可以为银线或者透明导电材料制成。
本申请还提供图2所示触控显示面板的制造方法，包括如下步骤：
S10:提供一基板。
具体地，提供一薄膜晶体管阵列基板，薄膜晶体管阵列基板包括衬底、薄膜晶体管阵列层、钝化层以及平坦化层。薄膜晶体管阵列层形成于衬底的一表面上，钝化层形成于薄膜晶体管阵列层远离衬底的表面上，平坦化层形成于钝化层远离衬底的表面上，平坦化层和钝化层上的同一位置设置有贯穿平坦化层和钝化层的过孔。基板具有至少一发光区和位于发光区外围的非发光区。薄膜晶体管设置于基板的非发光区。
S11:于平坦化层上形成阳极。
具体地，于平坦化层表面形成于整面的第一导电层，通过黄光制程以及刻蚀制程以使第一导电层图案化以形成阳极，第一导电层覆盖平坦化层和钝化层上的过孔以与薄膜晶体管阵列层的漏电极电性连接。
S12:于平坦化层上形成具有第一开口的第一像素定义层。
具体地，通过涂布以形成覆盖平坦化层以及阳极的第一像素定义层，经过黄光制程以形成第一开口，第一开口设置于阳极的上方以使部分的阳极显露，以定义基板的发光区。
S13:于第一像素定义层上形成第一阴极。
具体地，通过真空蒸镀以形成覆盖第一像素定义层和阳极的第二导电层，采用黄光制程以及刻蚀工艺以去除发光区的第二导电层以形成第一阴极。第一阴极的制备材料选自氧化铟锡、氧化铟锌、银等。具体地，第一阴极为120纳米-250纳米的金属层，例如为250纳米的银层。第一阴极靠近第一开口的边缘的距离第一开口的距离为3微米-5微米。其中，形成整面银层的温度为250℃。
S14：形成覆盖第一像素定义层和第一阴极且具有第二开口的第一像素定义子层。
具体地，通过涂布以形成覆盖第一像素定义层、第一阴极以及阳极的第一像素定义子层，通过黄光制程以形成第二开口，第二开口与第一开口对应设置。第二开口与第一开口连通。
S15: 于第一像素定义子层上形成第一电极。
具体地，通过化学气相沉积、溅射沉积等形成覆盖第一像素定义子层以及阳极的第三导电层，通过黄光制程以及刻蚀制程等图案化第三导电层以制得第一电极。第一电极为棱形金属网格，第一电极的组成为钛层/铝层/钛层，其中，钛层的厚度为0.05微米，铝层的厚度为0.6微米，第一电极的厚度为0.7微米。第一电极的线宽为3微米。
S16: 形成覆盖第一像素定义子层和第一电极且具有第三开口的第二像素定义子层。
具体地，通过涂布以形成覆盖第一像素定义子层、第一电极以及阳极的第二像素定义子层，采用黄光制程以形成第三开口，第三开口对应于第二开口设置，第三开口与第二开口连通。第一开口、第二开口以及第三开口组成开口，开口的纵向截面为倒梯形。
S17: 于第二像素定义子层上形成第二电极。
具体地，通过化学气相沉积、溅射沉积等形成覆盖第二像素定义子层以及阳极的第四导电层，通过黄光制程以及刻蚀制程等图案化第四导电层以制得第二电极。第四导电层的组成以及结构与第三导电层相同。第二电极为棱形金属网格，第二电极的组成为钛层/铝层/钛层，其中，钛层的厚度为0.05微米，铝层的厚度为0.6微米，第一电极的厚度为0.7微米。第二电极的线宽为3微米。
S18: 形成贯穿第一像素定义子层以及第二像素定义子层且位于开口两侧过孔。
具体地，采用黄光制程以制得贯穿第一像素定义子层以及第二像素定义子层且位于开口两侧的过孔。
S19: 于阳极上以及开口中形成有机功能层。
具体地，采用真空蒸镀以于阳极上且开口中依次形成空穴传输层、空穴注入层、有机发光层、电子注入层以及电子传输层。
S20: 于有机功能层上、贯穿第一像素子定义层以及第二像素定义子层的过孔中形成第二阴极。
具体地，采用精细掩膜板并通过真空蒸镀以于有机功能层上、贯穿第一像素子定义层以及第二像素定义子层的过孔中形成第二阴极。过孔中的第二阴极与第一阴极电性连接。第二阴极为170纳米的银层。
S21: 于第二阴极表面形成增透保护层。
具体地，于第二阴极表面形成氟化锂层，以起到保护第二阴极并增加光在发光区的透光率。
S22: 形成覆盖第二电极、第二像素定义子层以及增透保护层的封装层。
S23: 依次于封装层上设置偏光层以及盖板。
以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (18)

  1. 一种触控显示面板，其中，所述触控显示面板包括：
    基板，所述基板具有至少一发光区和位于所述发光区外围的非发光区；
    阳极，所述阳极设置于所述基板上且位于所述发光区；
    第一像素定义层和第二像素定义层，所述第一像素定义层和所述第二像素定义层依次形成于所述基板上，至少一位于所述阳极上方的开口沿所述第一像素定义层和所述第二像素定义层的厚度方向贯穿所述第一像素定义层和所述第二像素定义层以定义所述基板的所述发光区；
    有机功能层，所述有机功能层设置于所述阳极上且位于所述开口内；
    封装层，所述封装层设置于所述第二像素定义层远离所述基板的一侧；以及
    多个触控单元，多个所述触控单元设置于所述第一像素定义层和所述第二像素定义层之间，和/或，
    多个所述触控单元设置于所述第二像素定义层和所述封装层之间，
    所述第一像素定义层和所述第二像素定义层均为有机绝缘层。
  2. 根据权利要求1所述的触控显示面板，其中，多个所述触控单元设置于所述第二像素定义层和所述封装层之间，所述触控显示面板还包括第一阴极和第二阴极，所述第一阴极设置于所述第一像素定义层和所述第二像素定义层之间且位于所述非发光区，所述第二阴极设置于所述有机功能层和所述封装层之间且位于所述发光区，所述第一阴极和所述第二阴极通过贯穿所述第二像素定义层的过孔电性连接。
  3. 根据权利要求2所述的触控显示面板，其中，所述第一像素定义层和所述第二像素定义层的厚度之和的取值范围为1.0微米-2.0微米。
  4. 根据权利要求3所述的触控显示面板，其中，所述第一像素定义层的厚度小于所述第二像素定义层的厚度。
  5. 根据权利要求2所述的触控显示面板，其中，所述第一阴极的厚度大于所述第二阴极的厚度。
  6. 根据权利要求5所述的触控显示面板，其中，所述触控显示面板还包括增透保护层，所述增透保护层设置于所述第二阴极和所述封装层之间。
  7. 根据权利要求6所述的触控显示面板，其中，所述第二阴极的制备材料为银，所述增透保护层的制备材料选自氟化锂。
  8. 根据权利要求2所述的触控显示面板，其中，每个所述触控单元包括第一电极和第二电极，所述第一电极和所述第二电极构成互容式触控电极，所述第二像素定义层包括第一像素定义子层和第二像素定义子层，所述第一像素定义子层设置于所述第二像素定义子层和所述第一像素定义层之间，所述第一电极设置于所述第一像素定义子层和所述第二像素定义子层之间，所述第二电极设置于所述第二像素定义子层和所述封装层之间。
  9. 根据权利要求8所述的触控显示面板，其中，所述第一像素定义子层的厚度大于所述第二像素定义子层的厚度。
  10. 一种触控显示面板，其中，所述触控显示面板包括：
    基板，所述基板具有至少一发光区和位于所述发光区外围的非发光区；
    阳极，所述阳极设置于所述基板上且位于所述发光区；
    第一像素定义层和第二像素定义层，所述第一像素定义层和所述第二像素定义层依次形成于所述基板上，至少一位于所述阳极上方的开口沿所述第一像素定义层和所述第二像素定义层的厚度方向贯穿所述第一像素定义层和所述第二像素定义层以定义所述基板的所述发光区；
    有机功能层，所述有机功能层设置于所述阳极上且位于所述开口内；
    封装层，所述封装层设置于所述第二像素定义层远离所述基板的一侧；以及
    多个触控单元，多个所述触控单元设置于所述第一像素定义层和所述第二像素定义层之间，和/或，
    多个所述触控单元设置于所述第二像素定义层和所述封装层之间。
  11. 根据权利要求10所述的触控显示面板，其中，多个所述触控单元设置于所述第二像素定义层和所述封装层之间，所述触控显示面板还包括第一阴极和第二阴极，所述第一阴极设置于所述第一像素定义层和所述第二像素定义层之间且位于所述非发光区，所述第二阴极设置于所述有机功能层和所述封装层之间且位于所述发光区，所述第一阴极和所述第二阴极通过贯穿所述第二像素定义层的过孔电性连接。
  12. 根据权利要求11所述的触控显示面板，其中，所述第一像素定义层和所述第二像素定义层的厚度之和的取值范围为1.0微米-2.0微米。
  13. 根据权利要求12所述的触控显示面板，其中，所述第一像素定义层的厚度小于所述第二像素定义层的厚度。
  14. 根据权利要求11所述的触控显示面板，其中，所述第一阴极的厚度大于所述第二阴极的厚度。
  15. 根据权利要求14所述的触控显示面板，其中，所述触控显示面板还包括增透保护层，所述增透保护层设置于所述第二阴极和所述封装层之间。
  16. 根据权利要求15所述的触控显示面板，其中，所述第二阴极的制备材料为银，所述增透保护层的制备材料选自氟化锂。
  17. 根据权利要求11所述的触控显示面板，其中，每个所述触控单元包括第一电极和第二电极，所述第一电极和所述第二电极构成互容式触控电极，所述第二像素定义层包括第一像素定义子层和第二像素定义子层，所述第一像素定义子层设置于所述第二像素定义子层和所述第一像素定义层之间，所述第一电极设置于所述第一像素定义子层和所述第二像素定义子层之间，所述第二电极设置于所述第二像素定义子层和所述封装层之间。
  18. 根据权利要求17所述的触控显示面板，其中，所述第一像素定义子层的厚度大于所述第二像素定义子层的厚度。
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