WO2020008969A1 - 樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板 - Google Patents

樹脂組成物、遮光膜、遮光膜の製造方法および隔壁付き基板 Download PDF

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Publication number
WO2020008969A1
WO2020008969A1 PCT/JP2019/025291 JP2019025291W WO2020008969A1 WO 2020008969 A1 WO2020008969 A1 WO 2020008969A1 JP 2019025291 W JP2019025291 W JP 2019025291W WO 2020008969 A1 WO2020008969 A1 WO 2020008969A1
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Prior art keywords
partition
substrate
resin composition
partition wall
light
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PCT/JP2019/025291
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English (en)
French (fr)
Japanese (ja)
Inventor
飯塚英祐
諏訪充史
小林秀行
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東レ株式会社
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Application filed by 東レ株式会社 filed Critical 東レ株式会社
Priority to KR1020217000149A priority Critical patent/KR102432033B1/ko
Priority to CN201980041920.9A priority patent/CN112368611B/zh
Priority to KR1020227011384A priority patent/KR102624898B1/ko
Priority to JP2019536119A priority patent/JP6908116B2/ja
Priority to CN202210992042.2A priority patent/CN115356873A/zh
Publication of WO2020008969A1 publication Critical patent/WO2020008969A1/ja

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/105—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having substances, e.g. indicators, for forming visible images
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Definitions

  • the present invention relates to a resin composition, a light-shielding film formed from the resin composition, a method of manufacturing the light-shielding film, and a substrate with a partition having a pattern-formed partition.
  • a liquid crystal display device which is one type of image display device, generally performs color display using a white light source such as an LED and a color filter that selectively transmits red, green, and blue.
  • a white light source such as an LED
  • a color filter that selectively transmits red, green, and blue.
  • color display using such a color filter has poor light use efficiency and has problems in color reproducibility.
  • a color display device including a wavelength conversion unit made of a phosphor for wavelength conversion, a polarization separation unit and a polarization conversion unit has been proposed as a color display device with high light use efficiency (for example, see Patent Document 1).
  • a color display device including a conversion unit has been proposed (for example, see Patent Document 2).
  • the color filters including the color conversion phosphors described in Patent Literatures 1 and 2 have low light extraction efficiency and insufficient luminance because fluorescence is generated in all directions.
  • a high-definition display device referred to as 4K or 8K since the pixel size is reduced, the problem of luminance becomes significant, and thus higher luminance is required.
  • the inventors first studied a method of using a material obtained by adding a black pigment to a high-reflectance white partition wall material in order to form a partition having both high reflectance and light-shielding properties.
  • a material obtained by adding a black pigment to a high-reflectance white partition wall material in order to form a partition having both high reflectance and light-shielding properties.
  • the problem that the light was absorbed by the white pigment and the black pigment at the time of exposure, the light did not reach the bottom of the film, and the pattern processability was poor was revealed.
  • Patent Literatures 3 and 4 a technique has been proposed in which a specific metal compound is added to blacken by baking after pattern formation.
  • these blackening techniques require baking at 400 ° C. or higher, and there is a problem that heating at 250 ° C. or lower does not improve light-shielding properties.
  • an object of the present invention is to provide a resin composition that can form a partition having both high reflectance and light-shielding properties even under heating conditions of 250 ° C. or lower.
  • the present invention provides a resin composition containing a resin, an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum and palladium, a photopolymerization initiator or a quinonediazide compound, and a solvent. It is.
  • the resin composition of the present invention allows light to pass during the step of pattern exposure after film formation.However, since the light-shielding property increases after the exposed film is heated at a temperature of 120 ° C. or more and 250 ° C. or less, under heating conditions of 250 ° C. or less In addition, it is possible to form a fine thick-wall partition pattern having high reflectivity and high light-shielding properties.
  • FIG. 2 is a cross-sectional view showing one embodiment of a substrate with a partition wall of the present invention having a low refractive index layer and an inorganic protective layer I. It is sectional drawing which shows one aspect of the board
  • FIG. 3 is a cross-sectional view illustrating a configuration of a display device used for color mixing evaluation in Examples.
  • the resin composition of the present invention can be suitably used as a material for forming a partition for separating the color conversion phosphor.
  • the resin composition of the present invention is a resin and an organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum and palladium (hereinafter may be referred to as “organometallic compound”).
  • organometallic compound containing at least one metal selected from the group consisting of silver, gold, platinum and palladium
  • a photopolymerization initiator or a quinonediazide compound and a solvent.
  • the resin has a function of improving crack resistance and light resistance of the partition.
  • the content of the resin in the solid content of the resin composition is preferably 10% by weight or more, and more preferably 20% by weight or more, from the viewpoint of improving the crack resistance of the partition walls in the heat treatment.
  • the content of the resin in the solid content of the resin composition is preferably equal to or less than 60% by weight, and more preferably equal to or less than 50% by weight.
  • the solid content means all of the components contained in the resin composition except for volatile components such as a solvent. The amount of solid content can be determined by heating the resin composition and measuring the residue obtained by evaporating volatile components.
  • the resin examples include polysiloxane, polyimide, polyimide precursor, polybenzoxazole, polybenzoxazole precursor, and (meth) acrylic polymer.
  • the (meth) acrylic polymer means a polymer of a methacrylate and / or an acrylate. Two or more of these may be contained.
  • polysiloxane is preferable because of its excellent transparency, heat resistance and light resistance.
  • Polysiloxane is a hydrolysis / dehydration condensate of organosilane.
  • the polysiloxane preferably contains at least a repeating unit represented by the following general formula (2). Further, other repeating units may be included.
  • the repeating unit represented by the general formula (2) is contained in an amount of 10 to 80 mol% in all the repeating units in the polysiloxane.
  • the content of the repeating unit represented by the general formula (2) is more preferably at least 15 mol%, even more preferably at least 20 mol%.
  • the content of the repeating unit represented by the general formula (2) is 80 mol% or less, the molecular weight of the polysiloxane can be sufficiently increased at the time of polymerization, and the coating property can be improved.
  • the content of the repeating unit represented by the general formula (2) is more preferably 70 mol% or less.
  • R 1 and R 2 may be the same or different and represent a monovalent organic group having 1 to 20 carbon atoms.
  • R 1 and R 2 are preferably a group selected from an alkyl group having 1 to 6 carbon atoms and an aryl group having 6 to 12 carbon atoms, from the viewpoint of facilitating the adjustment of the molecular weight of the polysiloxane during the polymerization.
  • the alkyl group and the aryl group at least a part of the hydrogen may be substituted by a radical polymerizable group.
  • the radically polymerizable group may be radically polymerized.
  • the polysiloxane is further selected from a repeating unit represented by the following general formula (3) and a repeating unit represented by the following general formula (4). It preferably contains a repeating unit.
  • a repeating unit derived from a fluorine-containing alkoxysilane compound represented by the general formula (3) or (4) the refractive index of the polysiloxane is reduced, and when a white pigment described later is contained, white The difference in refractive index between the pigment and the pigment can be enlarged to further improve interfacial reflection and further improve the reflectance.
  • a total of 20 to 80 mol% of the repeating unit selected from the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) be contained in the polysiloxane.
  • the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) in a total amount of 20 mol% or more, when a white pigment described later is contained, the interface between the polysiloxane and the white pigment is The reflection can be further improved, and the reflectance can be further improved.
  • the total content of the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) is more preferably 40 mol% or more.
  • the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) in a total amount of 80 mol% or less, excessive hydrophobization of the polysiloxane is suppressed, and The compatibility with other components can be improved, and the resolution can be improved.
  • the total content of the repeating unit represented by the general formula (3) and the repeating unit represented by the general formula (4) is more preferably 70 mol% or less. Further, other repeating units may be included.
  • R 3 represents an alkyl group having 1 to 10 carbon atoms, an alkenyl group, an aryl group or an arylalkyl group, in which all or a part of hydrogen is substituted with fluorine.
  • R 4 represents a single bond, —O—, —CH 2 —CO—, —CO— or —O—CO—.
  • R 5 represents a monovalent organic group having 1 to 20 carbon atoms.
  • R 3 is preferably an alkyl group having 1 to 6 carbon atoms in which all or part of hydrogen has been substituted with fluorine.
  • the alkenyl group may be radically polymerized.
  • the repeating units represented by the general formulas (2) to (4) are derived from the alkoxysilane compounds represented by the following general formulas (5) to (7). That is, the polysiloxane containing the repeating units represented by the above general formulas (2) to (4) is obtained by hydrolyzing an alkoxysilane compound containing the alkoxysilane compound represented by the following general formulas (5) to (7). It can be obtained by polycondensation. Further, other alkoxysilane compounds may be used.
  • R 1 ⁇ R 5 are in each general formula (2) to (4) represent the same group as R 1 - R 5.
  • R 6 may be the same or different and represents a monovalent organic group having 1 to 20 carbon atoms, preferably an alkyl group having 1 to 6 carbon atoms.
  • alkoxysilane compound represented by the general formula (5) examples include, for example, dimethyldimethoxysilane, dimethyldiethoxysilane, ethylmethyldimethoxysilane, ethylmethyldimethoxysilane, methylpropyldimethoxysilane, methylpropyldiethoxysilane, diphenyldimethoxysilane , Diphenyldiethoxysilane, cyclohexylmethyldimethoxysilane, cyclohexylmethyldiethoxysilane, vinylmethyldimethoxysilane, vinylmethyldiethoxysilane, allylmethyldimethoxysilane, allylmethyldiethoxysilane, styrylmethyldimethoxysilane, styrylmethyldiethoxysilane, ⁇ -methacryloylpropylmethyldimethoxysilane, ⁇ -methacryloylpropylmethyldiethoxys
  • alkoxysilane compound represented by the general formula (6) examples include trifluoropropyltrimethoxysilane, trifluoropropyltriethoxysilane, perfluoropentyltrimethoxysilane, perfluoropentyltriethoxysilane, and tridecafluorooctyltrisilane.
  • alkoxysilane compound represented by the general formula (7) examples include bis (trifluoromethyl) dimethoxysilane, bis (trifluoropropyl) dimethoxysilane, bis (trifluoropropyl) diethoxysilane, trifluoropropylmethyldimethoxysilane, Trifluoropropylmethyldiethoxysilane, trifluoropropylethyldimethoxysilane, trifluoropropylethyldiethoxysilane, heptadecafluorodecylmethyldimethoxysilane and the like. Two or more of these may be used.
  • alkoxysilane compounds for example, methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, isobutyltrimethoxysilane, isobutyltriethoxysilane, Cyclohexyltrimethoxysilane, cyclohexyltriethoxysilane, 3-isocyanatopropyltrimethoxysilane, 3-isocyanatopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-ureidopropyltrimethoxysilane, Trifunctional alkoxysilane compounds such as 3-ureidopropyltriethoxysilane; tetramethoxysilane,
  • the content of the alkoxysilane compound represented by the general formula (5) in the alkoxysilane compound as a raw material of the polysiloxane is determined by the content of the repeating unit represented by the general formula (2) in all the repeating units of the polysiloxane. From the viewpoint of controlling the amount to the above range, 10 mol% or more is preferable, 15 mol% or more is more preferable, and 20 mol% or more is further preferable. On the other hand, the content of the alkoxysilane compound represented by the general formula (5) is preferably 80 mol% or less, and more preferably 70 mol% or less, from the same viewpoint.
  • the total content of the alkoxysilane compounds represented by the general formulas (6) and (7) the total content of the repeating units represented by the general formulas (3) and (4) is described above. From the viewpoint of setting the content in the range, 20 mol% or more is preferable, and 40 mol% or more is more preferable. On the other hand, the total content of the alkoxysilane compounds represented by the general formulas (6) and (7) is preferably 80 mol% or less, more preferably 70 mol% or less from the same viewpoint.
  • the weight average molecular weight (Mw) of the polysiloxane is preferably 1,000 or more, more preferably 2,000 or more, from the viewpoint of applicability.
  • the Mw of the polysiloxane is preferably 50,000 or less, more preferably 20,000 or less.
  • the Mw of the polysiloxane in the present invention means a value in terms of polystyrene measured by gel permeation chromatography (GPC).
  • the polysiloxane can be obtained by hydrolyzing the above-mentioned organosilane compound and then subjecting the hydrolyzate to a dehydration condensation reaction in the presence or absence of a solvent.
  • Various conditions in the hydrolysis can be set in accordance with the physical properties suitable for the intended use in consideration of the reaction scale, the size and shape of the reaction vessel, and the like.
  • Examples of the various conditions include an acid concentration, a reaction temperature, and a reaction time.
  • an acid catalyst such as hydrochloric acid, acetic acid, formic acid, nitric acid, oxalic acid, hydrochloric acid, sulfuric acid, phosphoric acid, polyphosphoric acid, polycarboxylic acid or anhydride thereof, or ion exchange resin can be used.
  • an acidic aqueous solution containing an acid selected from formic acid, acetic acid, and phosphoric acid is preferable.
  • the amount of the acid catalyst added is 0.05% by weight, based on 100 parts by weight of all the alkoxysilane compounds used in the hydrolysis reaction, from the viewpoint of promptly proceeding the hydrolysis. Or more, more preferably 0.1 part by weight or more.
  • the amount of the acid catalyst to be added is preferably 20 parts by weight or less, more preferably 10 parts by weight or less, based on 100 parts by weight of all the alkoxysilane compounds.
  • the total amount of the alkoxysilane compound refers to an amount including all of the alkoxysilane compound, its hydrolyzate, and its condensate. The same shall apply hereinafter.
  • the hydrolysis reaction can be performed in a solvent.
  • the solvent can be appropriately selected in consideration of the stability, wettability, volatility, and the like of the resin composition.
  • the hydrolysis can be performed without a solvent.
  • the amount of the solvent to be added is preferably 50 parts by weight or more, more preferably 80 parts by weight or more, based on 100 parts by weight of all the alkoxysilane compounds, from the viewpoint of suppressing gel formation.
  • the amount of the solvent to be added is preferably 500 parts by weight or less, more preferably 200 parts by weight or less, based on 100 parts by weight of all the alkoxysilane compounds, from the viewpoint of promoting hydrolysis more quickly.
  • water used for the hydrolysis reaction ion-exchanged water is preferable.
  • the amount of water can be arbitrarily set, but is preferably 1.0 to 4.0 mol per 1 mol of the total alkoxysilane compound.
  • a method of the dehydration condensation reaction for example, a method of directly heating a silanol compound solution obtained by a hydrolysis reaction of an organosilane compound and the like can be mentioned.
  • the heating temperature is preferably from 50 ° C. to the boiling point of the solvent, and the heating time is preferably from 1 to 100 hours.
  • reheating or addition of a base catalyst may be performed.
  • an appropriate amount of the produced alcohol or the like may be distilled and removed under heating and / or reduced pressure, and then a suitable solvent may be added.
  • the siloxane resin solution after hydrolysis and dehydration condensation does not contain the catalyst, and the catalyst can be removed if necessary.
  • the catalyst removal method water washing, treatment with an ion exchange resin, and the like are preferable from the viewpoint of easy operation and removability.
  • Water washing is a method in which a polysiloxane solution is diluted with an appropriate hydrophobic solvent, washed several times with water, and then the obtained organic layer is concentrated using an evaporator or the like.
  • the treatment with an ion exchange resin is a method in which a polysiloxane solution is brought into contact with an appropriate ion exchange resin.
  • the organometallic compound is decomposed and agglomerated into black particles or yellow particles in the exposure step and / or the heating step when forming the pattern of the partition wall (A-1) described later, and the OD of the partition wall (A-1) described later is reduced.
  • a resin composition having negative photosensitivity if a pattern is previously formed using a resin composition containing a large amount of black pigment in order to form a partition wall (A-1) having a high OD value, Light curing tends to be insufficient.
  • the shape of the obtained partition wall (A-1) tends to be reverse-tapered.
  • the taper angle can be easily adjusted to a preferable range described later because the photocuring is sufficiently performed to the bottom.
  • organometallic compound examples include organometallic compounds containing silver such as silver neodecanoate, silver octylate, and silver salicylate; and gold such as chloro (triphenylphosphine) gold and tetrachloroauric acid tetrahydrate.
  • Organometallic compounds Organometallic compounds containing platinum such as bis (acetylacetonato) platinum, dichlorobis (triphenylphosphine) platinum, dichlorobis (benzonitrile) platinum; bis (acetylacetonato) palladium, dichlorobis (triphenylphosphine) Palladium-containing organometallic compounds such as palladium, dichlorobis (benzonitrile) palladium, tetrakis (triphenylphosphine) palladium, and dibenzylideneacetone palladium. Two or more of these may be contained.
  • an organic metal compound containing silver such as silver neodecanoate, silver octylate, and silver salicylate
  • it is decomposed and aggregated in the exposure step to blacken, and further decomposed and aggregated in the subsequent heating step. It turns yellow.
  • organometallic compounds containing platinum such as bis (acetylacetonato) platinum, dichlorobis (triphenylphosphine) platinum, dichlorobis (benzonitrile) platinum; bis (acetylacetonato) palladium, dichlorobis (triphenylphosphine) palladium
  • organometallic compound selected from palladium such as dichlorobis (benzonitrile) palladium, tetrakis (triphenylphosphine) palladium, and dibenzylideneacetone palladium
  • blackening occurs due to decomposition and aggregation in the exposure step and / or the heating step.
  • an organic metal compound selected from bis (acetylacetonato) palladium, dichlorobis (triphenylphosphine) palladium, dichlorobis (benzonitrile) palladium and tetrakis (triphenylphosphine) palladium from the viewpoint of further improving the OD value Is preferred.
  • the content of the organometallic compound in the solid content is preferably 0.2 to 5% by weight.
  • the OD value of the obtained partition wall can be further improved.
  • the content of the organometallic compound is more preferably 1.5% by weight or more.
  • the reflectance can be further improved.
  • the resin composition of the present invention is used for forming a pattern of a partition wall (A-1) described later, it is preferable that the resin composition has negative or positive photosensitivity.
  • the resin composition When imparting negative-type photosensitivity, it is preferable to contain a photopolymerization initiator, and a partition wall having a high-definition pattern can be formed.
  • the negative photosensitive resin composition further contains a photopolymerizable compound.
  • the photopolymerization initiator may be any one that decomposes and / or reacts by irradiation of light (including ultraviolet rays and electron beams) to generate radicals.
  • the content of the photopolymerization initiator in the resin composition of the present invention is preferably 0.01% by weight or more, more preferably 1% by weight or more, based on the solid content.
  • the content of the photopolymerization initiator in the solid content is preferably 20% by weight or less, and more preferably 10% by weight or less, from the viewpoint of suppressing the dissolution of the remaining photopolymerization initiator and improving yellowing. preferable.
  • the photopolymerizable compound in the present invention refers to a compound having two or more ethylenically unsaturated double bonds in a molecule. Considering the ease of radical polymerization, the photopolymerizable compound preferably has a (meth) acryl group.
  • photopolymerizable compound examples include diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, and trimethylolpropane.
  • Triacrylate trimethylolpropane dimethacrylate, trimethylolpropane trimethacrylate, 1,3-butanediol diacrylate, 1,3-butanediol dimethacrylate, neopentyl glycol diacrylate, 1,4-butanediol diacrylate, 1, 4-butanediol dimethacrylate, 1,6-hexanediol diacrylate, 1, -Nonanediol dimethacrylate, 1,10-decanediol dimethacrylate, dimethylol-tricyclodecane diacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, dipentaerythritol pentaacrylate, dipentaerythritol Pentaery
  • the content of the photopolymerizable compound in the resin composition of the present invention is preferably 1% by weight or more based on the solid content.
  • the content of the photopolymerizable compound is preferably 40% by weight or less in the solid content from the viewpoint of suppressing the excessive reaction of radicals and improving the resolution.
  • quinonediazide compound a compound in which a sulfonic acid of naphthoquinonediazide is bonded to a compound having a phenolic hydroxyl group by an ester is preferable.
  • the compound having a phenolic hydroxyl group used here include, for example, BIs-Z, TekP-4HBPA (tetrakis P-DO-BPA), TrIsP-HAP, TrIsP-PA, BIsRS-2P, BIsRS-3P (all commercial products) Name, manufactured by Honshu Chemical Industry Co., Ltd.), BIR-PC, BIR-PTBP, BIR-BIPC-F (all trade names, manufactured by Asahi Organic Materials Co., Ltd.), 4,4'-sulfonyldiphenol, BPFL (Trade name, manufactured by JFE Chemical Corporation).
  • quinonediazide compound a compound obtained by introducing 4-naphthoquinonediazidesulfonic acid or 5-naphthoquinonediazidesulfonic acid to the compound having a phenolic hydroxyl group through an ester bond is preferable.
  • the content of the quinonediazide compound in the resin composition of the present invention is preferably 0.5% by weight or more, more preferably 1% by weight or more, based on the solid content, from the viewpoint of improving sensitivity.
  • the content of the quinonediazide compound is preferably 25% by weight or less, more preferably 20% by weight or less in the solid content, from the viewpoint of improving the resolution.
  • the solvent has a function of adjusting the viscosity of the resin composition to a range suitable for coating and improving the uniformity of the partition walls.
  • the solvent it is preferable to combine a solvent having a boiling point at atmospheric pressure of more than 150 ° C. and 250 ° C. or less with a solvent having a boiling point of 150 ° C. or less.
  • the solvent examples include alcohols such as ethanol, propanol, isopropanol, and diacetone alcohol; glycols such as ethylene glycol and propylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, propylene glycol monomethyl ether, and propylene glycol monoethyl.
  • Ethers such as ether, propylene glycol monopropyl ether and propylene glycol monobutyl ether; ketones such as methyl ethyl ketone, acetylacetone, methyl propyl ketone, methyl butyl ketone, methyl isobutyl ketone, diisobutyl ketone and cyclopentanone; dimethylformamide, dimethylacetamide and the like Amides; ethyl acetate, propyl ace Acetates such as acetate, butyl acetate, isobutyl acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether acetate, 3-methoxybutyl acetate, 3-methyl-3-methoxybutyl acetate, methyl lactate, ethyl lactate and butyl lactate Aromatic or aliphatic hydrocarbons such as toluene, xylene, hexane
  • diacetone alcohol as a solvent having a boiling point at atmospheric pressure of more than 150 ° C. and 250 ° C. or less and propylene glycol monomethyl ether as a solvent of 150 ° C. or less from the viewpoint of applicability.
  • the content of the solvent can be arbitrarily set according to the coating method and the like.
  • the content of the solvent is generally 50% by weight or more and 95% by weight or less in the resin composition.
  • the resin composition of the present invention preferably further contains a coordinating compound having a phosphorus atom (hereinafter, sometimes referred to as “coordinating compound”).
  • coordinating compound coordinates with the organometallic compound in the resin composition, improves the solubility of the organometallic compound in the solvent, promotes the decomposition of the organometallic compound, and further improves the OD value of the obtained partition wall. Can be done.
  • Examples of the coordinating compound include triphenylphosphine, tri-t-butylphosphine, trimethylphosphine, tricyclohexylphosphine, tri-t-butylphosphine tetrafluoroborate, tri (2-furyl) phosphine, tris (1- (Adamantyl) phosphine, tris (diethylamino) phosphine, tris (4-methoxyphenyl) phosphine, tris (O-tolyl) phosphine and the like. Two or more of these may be contained.
  • the content of the coordinating compound in the resin composition of the present invention is preferably 0.5 to 3.0 molar equivalents relative to the organometallic compound.
  • the resin composition of the present invention preferably further contains a white pigment and / or a black pigment.
  • the white pigment has a function of further improving the reflectance of the partition walls.
  • the black pigment has a function of adjusting the OD value.
  • the white pigment examples include titanium dioxide, zirconium oxide, zinc oxide, barium sulfate, and composite compounds thereof. Two or more of these may be contained. Among these, titanium dioxide, which has a high reflectance and is easily used industrially, is preferable.
  • the crystal structure of titanium dioxide is classified into anatase type, rutile type and brookite type. Among these, rutile-type titanium oxide is preferred because of its low photocatalytic activity.
  • the surface treatment may be applied to the white pigment.
  • Surface treatment with a metal selected from Al, Si and Zr is preferable, and the light resistance and heat resistance of the formed partition wall can be improved.
  • the median diameter of the white pigment is preferably 100 to 500 nm from the viewpoint of further improving the reflectance of the partition walls.
  • the median diameter of the white pigment can be calculated from a particle size distribution measured by a laser diffraction method using a particle size distribution measuring device (N4-PLUS; manufactured by Beckman Coulter, Inc.) or the like.
  • titanium dioxide pigment preferably used as a white pigment examples include R960; manufactured by DuPont (rutile type, SiO 2 / Al 2 O 3 treatment, average primary particle diameter 210 nm), CR-97; Ishihara Sangyo Co., Ltd. (Rutile type, Al 2 O 3 / ZrO 2 treatment, average primary particle diameter 250 nm), JR-301; Teika Co., Ltd. (rutile type, Al 2 O 3 treatment, average primary particle diameter 300 nm), JR-405 Manufactured by Teica Co., Ltd. (rutile type, Al 2 O 3 treatment, average primary particle diameter 210 nm), JR-600A; Teica Co., Ltd.
  • the content of the white pigment in the resin composition is preferably 20% by weight or more, more preferably 30% by weight or more in the solid content from the viewpoint of further improving the reflectance.
  • the content of the white pigment is preferably 60% by weight or less, more preferably 55% by weight or less based on the solid content.
  • black pigment examples include a black organic pigment, a mixed color organic pigment, and a black inorganic pigment.
  • black organic pigment examples include carbon black, perylene black, aniline black, and benzofuranone pigments. These may be coated with a resin.
  • the mixed color organic pigment examples include those obtained by mixing two or more kinds of pigments selected from red, blue, green, violet, yellow, magenta, cyan, and the like, to give a pseudo black color.
  • a mixed pigment of a red pigment and a blue pigment is preferable from the viewpoint of achieving both an appropriately high OD value and pattern processability.
  • the weight ratio of the red pigment to the blue pigment in the mixed pigment is preferably from 20/80 to 80/20, more preferably from 30/70 to 70/30.
  • Specific examples of typical pigments represented by color index (CI) numbers include the following.
  • red pigments examples include Pigment Red (hereinafter abbreviated as PR) 9, PR48, PR97, PR122, PR123, PR144, PR149, PR166, PR168, PR177, PR179, PR180, PR192, PR209, PR215, PR216, PR217, PR220. , PR223, PR224, PR226, PR227, PR228, PR240, PR254, and the like. Two or more of these may be contained.
  • blue pigment include Pigment Blue (hereinafter abbreviated as PB) 15, PB15: 3, PB15: 4, PB15: 6, PB22, PB60, and PB64. Two or more of these may be contained.
  • black inorganic pigments include graphite; fine particles of metals such as titanium, copper, iron, manganese, cobalt, chromium, nickel, zinc, calcium, silver, gold, platinum and palladium; metal oxides; Metal sulfide; metal nitride; metal oxynitride; metal carbide and the like. Two or more of these may be contained.
  • titanium nitride, zirconium nitride, and a mixed pigment having a weight ratio of a red pigment and a blue pigment of 20/80 to 80/20 are used.
  • the selected pigment is more preferred.
  • the content of the black pigment in the resin composition is preferably 0.01% by weight or more in the solid content from the viewpoint of adjusting the reflectance and the OD to the above-mentioned ranges to further suppress the color mixing of light in adjacent pixels. 0.05% by weight or more is more preferable.
  • the content of the black pigment is preferably 5% by weight or less, more preferably 3% by weight or less in the solid content.
  • the resin composition of the present invention preferably further contains a photobase generator.
  • a photobase generator By containing a photobase generator, a base is generated in the exposure step, and the decomposition / aggregation of the organometallic compound in the resin composition is promoted, so that the organometallic compound is more efficiently converted into black particles or yellow particles. By converting, the OD value of the obtained partition wall can be further improved.
  • the photobase generator is not particularly limited as long as it can be decomposed and / or reacted by irradiation of light (including ultraviolet rays and electron beams) to generate a base.
  • light including ultraviolet rays and electron beams
  • the photobase generator is not particularly limited as long as it can be decomposed and / or reacted by irradiation of light (including ultraviolet rays and electron beams) to generate a base.
  • the content of the photobase generator in the resin composition of the present invention is preferably 0.5% by weight or more based on the solid content.
  • the content of the photobase generator is preferably 2.0% by weight or less in the solid content from the viewpoint of improving the resolution.
  • the resin composition of the present invention may contain a liquid repellent compound.
  • the liquid-repellent compound is a compound that imparts the property of repelling water or an organic solvent (liquid-repellent performance) to the resin composition.
  • liquid repellent compound liquid repellency can be imparted to the top of the partition after the formation of the partition (A-1).
  • liquid repellent compound examples include 1,1,2,2-tetrafluorooctyl (1,1,2,2-tetrafluoropropyl) ether, 1,1,2,2-tetrafluorooctylhexyl ether, and octaethylene.
  • liquid repellent compounds include "MegaFac” (registered trademark) F142D, F172, F173, F183, F444, F477 (all manufactured by Dainippon Ink and Chemicals, Inc.), and F-Top EF301, 303, and 352.
  • those having a photopolymerizable group are more preferable because they have high reactivity and can form a strong bond with the resin.
  • the liquid repellent compound having a fluorine atom and a photopolymerizable group include “MegaFac” (registered trademark) RS-76-E, RS-56, RS-72-k, RS-75, RS-76-E , RS-76-NS, RS-76, and RS-90 (trade names, manufactured by DIC Corporation) and the like.
  • the photopolymerizable group may be photopolymerized in the partition wall (A-1) made of the photocurable negative photosensitive resin composition.
  • the content of the liquid repellent compound in the resin composition is preferably 0.01% by weight or more, and more preferably 0.1% by weight or more based on the solid content. More preferred.
  • the content of the liquid repellent compound is preferably 10% by weight or less, more preferably 5% by weight or less in the solid content.
  • the resin composition of the present invention may contain, if necessary, an ultraviolet absorber, a polymerization inhibitor, a surfactant, an adhesion improver, and the like.
  • an ultraviolet absorber in the resin composition of the present invention, light resistance can be improved and resolution can be further improved.
  • the ultraviolet absorber include 2- (2H-benzotriazol-2-yl) phenol and 2- (2H-benzotriazol-2-yl) -4,6-tert-pentyl from the viewpoint of transparency and non-coloring.
  • the resolution can be further improved by including the polymerization inhibitor in the resin composition of the present invention.
  • the polymerization inhibitor include di-t-butylhydroxytoluene, butylhydroxyanisole, hydroquinone, 4-methoxyphenol, 1,4-benzoquinone, and t-butylcatechol.
  • IRGANOX registered trademark 1010, 1035, 1076, 1098, 1135, 1330, 1726, 1425, 1520, 245, 259, 3114, 565, 295 (all trade names, BASF Japan Co., Ltd.). Two or more of these may be contained.
  • the flow property during coating can be improved.
  • the surfactant include “MegaFac” (registered trademark) F142D, F172, F173, F183, F445, F470, F475, F477 (all trade names, manufactured by Dainippon Ink and Chemicals, Inc.), NBX- 15.
  • Fluorinated surfactants such as FTX-218 (trade name, manufactured by Neos Co., Ltd.); "BYK” (registered trademark) -333, 301, 331, 345, 307 (trade name, BYK Chemie Co., Ltd.) Japan-made), polyalkylene oxide-based surfactants, poly (meth) acrylate-based surfactants, and the like. Two or more of these may be contained.
  • the adhesion improving agent in the resin composition of the present invention, the adhesion to the underlying substrate is improved, and a highly reliable partition wall can be obtained.
  • the adhesion improver include an alicyclic epoxy compound and a silane coupling agent. Among these, the alicyclic epoxy compound has high heat resistance, so that the color change after heating can be further suppressed.
  • alicyclic epoxy compound examples include, for example, 3,2-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate and 1,2-epoxy-cyclohexane of 2,2-bis (hydroxymethyl) -1-butanol.
  • the content of the adhesion improver in the resin composition of the present invention is preferably 0.1% by weight or more, more preferably 1% by weight or more in the solid content, from the viewpoint of further improving the adhesion to the underlying substrate. .
  • the content of the adhesion improver is preferably 20% by weight or less, more preferably 10% by weight or less in the solid content, from the viewpoint of further suppressing color change due to heating.
  • the resin composition of the present invention can be produced, for example, by mixing the aforementioned resin, an organometallic compound, a photopolymerization initiator or a quinonediazide compound, a solvent, and other components as necessary.
  • the light-shielding film of the present invention is obtained by curing the above-described resin composition of the present invention.
  • the light-shielding film of the present invention can be suitably used as a light-shielding pattern in an OGS-type touch panel such as a decorative pattern for a cover substrate, in addition to a partition wall (A-1) described later.
  • the thickness of the light-shielding film is preferably 10 ⁇ m or more.
  • the method for producing a light-shielding film of the present invention includes a step of applying the resin composition of the present invention on an undersubstrate and drying the film to obtain a dried film, an exposing step of pattern-exposing the obtained dried film, It is preferable to have a developing step of dissolving and removing a portion of the dried film that is soluble in the developer, and a heating step of heating the dried film to cure the dried film.
  • the OD value per 10 ⁇ m of film thickness is increased by 0.3 or more by heating the film after development at a temperature of 120 ° C. or more and 250 ° C. or less.
  • the heating temperature in the heating step is preferably 150 ° C. or higher, and more preferably 180 ° C. or higher, from the viewpoint of further improving the OD value.
  • the heating temperature in the heating step is preferably 250 ° C. or lower, more preferably 240 ° C. or lower, from the viewpoint of suppressing the occurrence of cracks in the film to be heated.
  • the heating time is preferably from 15 minutes to 2 hours.
  • the film formed from the resin composition of the present invention has a low OD value at the time of exposure, and the OD value increases after pattern formation. An angled partition can be obtained. In addition, since the OD value after pattern formation is high, it is possible to obtain a partition having both high reflectance and light shielding properties.
  • a method of applying the resin composition in the film forming step for example, a slit coating method, a spin coating method and the like can be mentioned.
  • the drying device include a hot air oven and a hot plate.
  • the drying time is preferably from 80 to 120 ° C., and the drying time is preferably from 1 to 15 minutes.
  • the exposure step is a step of photo-curing a necessary portion of the dried film by exposure or photo-decomposing an unnecessary portion of the dried film to make any portion of the dried film soluble in a developer.
  • exposure may be performed through a photomask having a predetermined opening, or an arbitrary pattern may be directly drawn using a laser beam or the like without using a photomask.
  • the actinic rays irradiated in the exposure step include, for example, near infrared rays, visible rays, and ultraviolet rays, and ultraviolet rays are preferable.
  • the light source include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a halogen lamp, and a germicidal lamp, and an ultra-high-pressure mercury lamp is preferable.
  • Exposure conditions can be appropriately selected depending on the thickness of the dried film to be exposed. In general, it is preferable to perform exposure with an exposure amount of 1 to 10,000 mJ / cm 2 using an ultrahigh pressure mercury lamp having an output of 1 to 100 mW / cm 2 .
  • a portion of the dried film after exposure that is soluble in the developing solution is dissolved and removed with the developing solution, and only a portion that is insoluble in the developing solution remains.
  • a pattern before heating examples include a lattice shape and a stripe shape.
  • Examples of the developing method include an immersion method, a spray method, and a brush method.
  • the developer a solvent capable of dissolving an unnecessary portion in the dried film after exposure can be appropriately selected, and an aqueous solution containing water as a main component is preferable.
  • the resin composition contains a polymer having a carboxyl group
  • the developing solution is preferably an aqueous alkaline solution.
  • the aqueous alkali solution include aqueous inorganic alkali solutions such as sodium hydroxide, potassium hydroxide, sodium carbonate, and calcium hydroxide; aqueous organic alkali solutions such as tetramethylammonium hydroxide, trimethylbenzylammonium hydroxide, monoethanolamine, and diethanolamine. Is mentioned.
  • an aqueous solution of potassium hydroxide or an aqueous solution of tetramethylammonium hydroxide is preferred from the viewpoint of improving the resolution.
  • the concentration of the aqueous alkali solution is preferably 0.05% by weight or more, and more preferably 0.1% by weight or more, from the viewpoint of improving developability.
  • the concentration of the alkaline aqueous solution is preferably 5% by weight or less, more preferably 1% by weight or less, from the viewpoint of suppressing peeling and corrosion of the pattern before heating.
  • the development temperature is preferably from 20 to 50 ° C. in order to facilitate the process control.
  • the heating step is a step of heating and curing the pre-heating pattern formed in the developing step.
  • Examples of the heating device include a hot plate and an oven. Preferred heating temperature and heating time are as described above.
  • the substrate with a partition wall of the present invention has a partition (A-1) formed with a pattern on an undersubstrate (hereinafter, may be referred to as “partition (A-1)”).
  • the base substrate has a function as a support in the substrate with partition walls.
  • the partition has a pixel containing a color conversion light-emitting material described later, the partition has a function of suppressing color mixture of light between adjacent pixels.
  • the barrier rib (A-1) has a reflectivity at a wavelength of 550 nm per 10 ⁇ m thickness of 20% to 60%, and an OD value per 10 ⁇ m thickness of 1.0 to 3.0.
  • the reflectivity By setting the reflectivity to 20% or more and the OD value to 3.0 or less, (A-1) the luminance of the display device can be improved by utilizing the reflection on the side wall of the partition wall.
  • the reflectance By setting the reflectance to 60% or less and the OD value to 1.0 or more, it is possible to suppress the light transmitted through the partition wall (A-1) and to suppress the color mixing of light between adjacent pixels.
  • FIG. 1 shows a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a patterned partition wall.
  • a partition 2 having a pattern is formed on an undersubstrate 1.
  • the base substrate examples include a glass plate, a resin plate, and a resin film.
  • a material of the glass plate non-alkali glass is preferable.
  • polyester, (meth) acrylic polymer, transparent polyimide, polyether sulfone, and the like are preferable.
  • the thickness of the glass plate and the resin plate is preferably 1 mm or less, and more preferably 0.8 mm or less.
  • the thickness of the resin film is preferably 100 ⁇ m or less.
  • the partition wall (A-1) is characterized in that the reflectance per 10 ⁇ m thickness at a wavelength of 550 nm is 20 to 60% and the OD value is 1.0 to 3.0.
  • the thickness of the partition wall (A-1) refers to the length of the partition wall (A-1) in a direction perpendicular to the underlying substrate (height direction).
  • the thickness of the partition 2 is represented by the symbol H.
  • the length of the partition wall (A-1) in a direction parallel to the base substrate is the width of the partition wall (A-1).
  • the width of the partition 2 is represented by a reference symbol L.
  • the reflectance on the side wall of the partition contributes to the improvement of the brightness of the display device, and the light blocking property of the partition contributes to the suppression of color mixing.
  • the reflectance and the OD value per thickness are considered to be the same regardless of the thickness direction and the width direction, the present invention focuses on the reflectance and the OD value per partition thickness.
  • the thickness of the partition wall (A-1) is preferably 0.5 to 50 ⁇ m, and the width is preferably 5 to 40 ⁇ m. Therefore, in the present invention, 10 ⁇ m was selected as a representative value of the thickness of the partition wall (A-1), and attention was paid to the reflectance and the OD value per 10 ⁇ m of the thickness.
  • the reflectance per 10 ⁇ m thickness is less than 20%, the reflection on the side wall of the partition is small, and the luminance of the display device becomes insufficient.
  • the reflectance per 10 ⁇ m thickness is preferably 30% or more, more preferably 35% or more. The higher the reflectance, the greater the reflection on the side wall of the partition wall, so that the brightness of the display device can be improved. However, if the reflectance exceeds 60%, color mixing of light occurs between adjacent pixels.
  • the reflectance per 10 ⁇ m thickness is more preferably 44% or less.
  • the OD value per 10 ⁇ m thickness is less than 1.0, light color mixing occurs between adjacent pixels.
  • the OD value per 10 ⁇ m thickness is preferably 1.5 or more, more preferably 2.0 or more.
  • the OD value per 10 ⁇ m thickness exceeds 3.0, the reflection on the side wall of the partition wall becomes small, and the luminance of the display device becomes insufficient.
  • the OD value per 10 ⁇ m thickness is more preferably 2.5 or less.
  • the reflectance of the partition wall (A-1) per 10 ⁇ m thickness at a wavelength of 550 nm was measured using a spectrophotometer (for example, Konica Minolta Co., Ltd., CM-2600d) from above for the partition wall (A-1) having a thickness of 10 ⁇ m. Thus, it can be measured in the SCI mode. However, when a sufficient area for measurement cannot be secured, or when a measurement sample having a thickness of 10 ⁇ m cannot be obtained, if the composition of the partition wall (A-1) is known, the same composition as that of the partition wall (A-1) is used.
  • a spectrophotometer for example, Konica Minolta Co., Ltd., CM-2600d
  • the reflectivity per 10 ⁇ m thickness may be obtained by preparing a solid film having a thickness of 10 ⁇ m and measuring the reflectivity of the solid film similarly to the partition (A-1). For example, a solid film is formed using the material on which the partition wall (A-1) is formed, under the same processing conditions as the formation of the partition wall (A-1) except that the thickness is 10 ⁇ m and the pattern is not formed. The reflectance of the film may be measured from the upper surface in the same manner.
  • the OD value of the partition wall (A-1) per 10 ⁇ m thickness is determined by using an optical densitometer (for example, 361T (visual) manufactured by X-rite) from above for the partition wall (A-1) having a thickness of 10 ⁇ m.
  • the intensity of the transmitted light can be measured and calculated by the following equation (1).
  • the partition ( An OD value per 10 ⁇ m thickness may be obtained by preparing a solid film having the same composition as that of A-1) and having a thickness of 10 ⁇ m, and measuring the OD value of the solid film similarly to the partition wall (A-1). .
  • OD value log10 (I 0 / I) ⁇ (1)
  • I 0 incident light intensity
  • I transmitted light intensity
  • the partition wall (A-1) may have a preferable composition described later.
  • the taper angle of the partition wall (A-1) is preferably 45 ° to 110 °.
  • the taper angle of the partition (A-1) refers to an angle formed between a side and a bottom of the cross section of the partition. In the case of the substrate with a partition wall shown in FIG. 1, the taper angle of the partition wall 2 is represented by the symbol ⁇ .
  • the taper angle is more preferably 70 ° or more.
  • the taper angle is set to 110 ° or less, when forming a pixel containing the color conversion luminescent material (B) described later by ink jet coating, it is possible to suppress breakage of the ink and improve ink jet coatability.
  • the breakage of the ink refers to a phenomenon in which the ink gets over the partition and mixes into the adjacent pixel portion.
  • the taper angle is more preferably 95 ° or less.
  • the taper angle of the partition wall (A-1) is determined by measuring an arbitrary cross section of the partition wall (A-1) by using an optical microscope (FE-SEM (eg, S-4800 manufactured by Hitachi, Ltd.)) and accelerating voltage 3 It can be obtained by observing at 0.0 kV and 2,500 times magnification and measuring the angle formed between the side and the bottom of the cross section of the partition wall (A-1).
  • FE-SEM eg, S-4800 manufactured by Hitachi, Ltd.
  • Means for adjusting the taper angle of the partition wall (A-1) to the above range include, for example, the partition wall (A-1) having a preferable composition described later, and the use of the above-described resin composition of the present invention. And the like.
  • the thickness of the partition wall (A-1) is preferably larger than the thickness of the pixel.
  • the thickness of the partition wall (A-1) is preferably 0.5 ⁇ m or more, and more preferably 10 ⁇ m or more.
  • the thickness of the partition wall (A-1) is preferably equal to or less than 50 ⁇ m, and more preferably equal to or less than 20 ⁇ m, from the viewpoint of more efficiently extracting light emitted from the bottom of the pixel.
  • the width of the partition wall (A-1) is sufficient to further improve luminance by utilizing light reflection on the side wall of the partition wall and to further suppress color mixture of light in adjacent pixels due to light leakage.
  • the width of the partition is preferably 5 ⁇ m or more, more preferably 15 ⁇ m or more.
  • the width of the partition wall (A-1) is preferably equal to or less than 50 ⁇ m, and more preferably equal to or less than 40 ⁇ m, from the viewpoint of securing more light emitting regions of the pixels and further improving the luminance.
  • the partition wall (A-1) has a repetition pattern for a predetermined number of pixels according to the screen size of the image display device.
  • the number of pixels of the image display device is, for example, 4000 in the horizontal direction and 2000 in the vertical direction.
  • the number of pixels affects the resolution (fineness) of the displayed image. For this reason, it is necessary to form a number of pixels according to the required image resolution and the screen size of the image display device, and it is preferable to determine the pattern formation dimensions of the partition walls accordingly.
  • the partition wall (A-1) is made of a resin, a white pigment, and at least one metal oxide or metal selected from the group consisting of palladium oxide, platinum oxide, gold oxide, silver oxide, palladium, platinum, gold and silver. (Hereinafter sometimes referred to as “metal oxide particles or metal particles”).
  • the resin has a function of improving crack resistance and light resistance of the partition.
  • the white pigment has a function of further improving the reflectance of the partition walls.
  • the metal oxide particles or the metal particles have a function of adjusting the OD value and suppressing color mixing of light in adjacent pixels.
  • the resin and the white pigment are as described above as the materials constituting the resin composition.
  • the content of the resin in the partition wall (A-1) is preferably 10% by weight or more, and more preferably 20% by weight or more, from the viewpoint of improving the crack resistance of the partition wall in the heat treatment.
  • the content of the resin in the partition wall (A-1) is preferably equal to or less than 60% by weight, and more preferably equal to or less than 50% by weight.
  • the content of the white pigment in the partition wall (A-1) is preferably 20% by weight or more, and more preferably 30% by weight or more, from the viewpoint of further improving the reflectance.
  • the content of the white pigment in the partition walls (A-1) is preferably 60% by weight or less, more preferably 55% by weight or less.
  • the metal oxide particles or metal particles refer to black particles or yellow particles generated by the decomposition and aggregation of the above-mentioned organometallic compound in the resin composition in the exposure step and / or the heating step.
  • the content of the metal oxide particles or the metal particles in the partition wall (A-1) is set at 0.2% by weight from the viewpoint of adjusting the reflectance and the OD to the above-mentioned ranges to further suppress color mixing of light in adjacent pixels. Or more, more preferably 0.5% by weight or more.
  • the content of the metal oxide particles or the metal particles in the partition wall (A-1) is preferably 5% by weight or less, more preferably 3% by weight or less. .
  • the partition wall (A-1) preferably further contains a liquid repellent compound.
  • a liquid repellent compound By containing the liquid repellent compound, liquid repellency can be imparted to the partition wall (A-1).
  • each pixel In addition, color conversion luminescent materials having different compositions can be easily applied.
  • the liquid-repellent compound is as described above as a material constituting the resin composition.
  • the content of the liquid repellent compound in the partition (A-1) is preferably 0.01% by weight or more, and more preferably 0.1% by weight or more. More preferred.
  • the content of the liquid-repellent compound in the partition wall (A-1) is preferably 10% by weight or less, more preferably 5% by weight or less.
  • the surface contact angle of the partition wall (A-1) with propylene glycol monomethyl ether acetate is preferably 10 ° or more, and more preferably 20 ° or more, from the viewpoint of improving ink-jet coatability and facilitating separate application of the color conversion luminescent material. More preferably, it is more preferably 40 ° or more.
  • the surface contact angle of the partition (A-1) is preferably 70 ° or less, more preferably 60 ° or less.
  • a method for setting the surface contact angle of the partition wall (A-1) to the above range for example, a method using the above-described lyophobic compound and the like can be mentioned.
  • a photosensitive paste method is preferable as a method for forming a pattern of the partition wall (A-1) on the base substrate because the pattern shape can be easily adjusted.
  • a method of patterning the partition walls by the photosensitive paste method for example, a coating step of applying the above-described resin composition on a base substrate and drying to obtain a dry film, and applying the obtained dry film to a desired pattern
  • a method including an exposure step of performing pattern exposure according to the shape, a development step of dissolving and removing a portion of the dried film after exposure that is soluble in a developer, and a heating step of curing the developed partition walls is preferable.
  • the resin composition preferably has positive or negative photosensitivity.
  • the pattern exposure may be performed through a photomask having a predetermined opening, or an arbitrary pattern may be directly drawn using a laser beam or the like without using a photomask.
  • the partition (A-1) can be pattern-formed on the light-shielding partition (A-2) in the same manner.
  • Each step is as described above as a method of manufacturing a light-shielding film.
  • the substrate with a partition wall according to the present invention further comprises (A-2) an OD value per 1.0 ⁇ m thickness of 0.5 or more between the base substrate and the (A-1) patterned partition wall. It is preferable to have a pattern-formed partition (hereinafter, sometimes referred to as “light-shielding partition (A-2)”).
  • light-shielding partition (A-2) By having the light-shielding partition wall (A-2), light leakage from a backlight in a display device can be suppressed by improving light-shielding properties, and a clear image with high contrast can be obtained.
  • FIG. 6 is a cross-sectional view illustrating one embodiment of a substrate with a partition wall of the present invention having a light-shielding partition wall.
  • a pattern-formed partition wall 2 and a light-blocking partition wall 7 are provided, and pixels 3 are arranged in a region separated by the partition wall 2 and the light-blocking partition wall 7.
  • the light-shielding partition wall (A-2) has an OD value of 0.5 or more per 1.0 ⁇ m thickness.
  • the thickness of the light-shielding partition wall (A-2) is preferably 0.5 to 10 ⁇ m as described later. Therefore, in the present invention, 1.0 ⁇ m was selected as a representative value of the thickness of the partition wall (A-2), and attention was paid to the OD value per 1.0 ⁇ m of the thickness.
  • the OD value per 1.0 ⁇ m thickness is more preferably 1.0 or more.
  • the OD value per 1.0 ⁇ m thickness is preferably 4.0 or less, and the pattern workability can be improved.
  • the OD value per 1.0 ⁇ m thickness is more preferably 3.0 or less.
  • the OD value of the light-shielding partition wall (A-2) can be measured in the same manner as the above-mentioned OD value of the partition wall (A-1).
  • Means for setting the OD value in the above range include, for example, setting the light-shielding partition (A-2) to a preferable composition described later.
  • the thickness of the light-shielding partition wall (A-2) is preferably 0.5 ⁇ m or more, more preferably 1.0 ⁇ m or more, from the viewpoint of improving light-shielding properties.
  • the thickness of the light-shielding partition wall (A-2) is preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less.
  • the width of the light-shielding partition wall (A-2) is preferably about the same as that of the above-described partition wall (A-1).
  • the light-shielding partition wall (A-2) preferably contains a resin and a black pigment.
  • the resin has a function of improving crack resistance and light resistance of the partition.
  • the black pigment has a function of absorbing incident light and reducing emitted light.
  • the resin examples include an epoxy resin, a (meth) acrylic polymer, a polyurethane, a polyester, a polyimide, a polyolefin, and a polysiloxane. Two or more of these may be contained. Among these, polyimide is preferable because of its excellent heat resistance and solvent resistance.
  • black pigment those exemplified as the black pigment in the resin composition described above, palladium oxide, platinum oxide, gold oxide, silver oxide and the like can be mentioned.
  • a black pigment selected from titanium nitride, zirconium nitride, carbon black, palladium oxide, platinum oxide, gold oxide and silver oxide is preferred because of its high light-shielding properties.
  • a method for forming a pattern of the light-shielding partition (A-2) on the base substrate for example, a photosensitive material described in JP-A-2015-1654 is used and exposed in the same manner as the partition (A-1).
  • a method of forming a pattern by a conductive paste method is preferred.
  • the substrate with a partition wall of the present invention further comprises a pixel (B) containing a color conversion luminescent material arranged and separated by the partition wall (A-1) (hereinafter, may be referred to as “pixel (B)”). It is preferable to have The pixel (B) has a function of converting at least a part of the wavelength region of the incident light and emitting outgoing light in a wavelength region different from the incident light, thereby enabling a color display.
  • FIG. 2 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a patterned partition wall (A-1) and a pixel (B) containing a color conversion luminescent material.
  • A-1 patterned partition wall
  • B pixel
  • FIG. 2 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a patterned partition wall (A-1) and a pixel (B) containing a color conversion luminescent material.
  • A-1 patterned partition wall
  • B pixel
  • the color conversion material preferably contains a phosphor selected from an inorganic phosphor and an organic phosphor.
  • the substrate with a partition wall of the present invention can be used as a display device by combining, for example, a backlight that emits blue light, a liquid crystal formed over a TFT, and a pixel (B).
  • the region corresponding to the red pixel preferably contains a red phosphor that is excited by blue excitation light and emits red fluorescence.
  • the region corresponding to the green pixel preferably contains a green phosphor that is excited by blue excitation light and emits green fluorescence. It is preferable that the region corresponding to the blue pixel does not contain a phosphor.
  • the substrate with a partition wall of the present invention can also be used in a display device using a blue micro LED in which a number of blue LEDs corresponding to each pixel are arranged on a substrate and separated by white partition walls as a backlight. ON / OFF of each pixel is enabled by ON / OFF of the blue micro LED, and no liquid crystal is required.
  • the substrate with a partition according to the present invention can be used for both a partition for separating each pixel and a partition for separating a blue micro LED in a backlight.
  • the inorganic phosphor those which emit light of each color such as green or red by blue excitation light, that is, those which are excited by excitation light having a wavelength of 400 to 500 nm and whose emission spectrum has a peak in a region of 500 to 700 nm are preferable.
  • examples of such an inorganic phosphor include a YAG-based phosphor, a TAG-based phosphor, a sialon-based phosphor, a Mn 4+ activated fluoride complex phosphor, and an inorganic semiconductor called a quantum dot. Two or more of these may be used. Among these, quantum dots are preferred. Since the quantum dot has a smaller average particle size than other phosphors, (B) the surface of the pixel can be smoothed to suppress light scattering on the surface, so that the light extraction efficiency can be further improved, Brightness can be further improved.
  • Examples of the quantum dot include particles made of II-IV group, III-V group, IV-VI group, and IV group semiconductors.
  • examples of these inorganic semiconductors include Si, Ge, Sn, Se, Te, B, C (including diamond), P, BN, BP, BAs, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, ZnO, ZnS, ZnSe, ZnTe, CdS, CdSe, CdSeZn, CdTe, HgS, HgSe, HgTe, BeS, BeSe, BeTe, MgS, MgSe, GeSe, GeSe, GeSe Examples thereof include SnSe, SnTe, PbO, PbS, PbSe, PbTe, CuF, CuCl, CuBr, CuI, Si 3 N 4 , Ge 3 N 4 ,
  • the quantum dot may contain a p-type dopant or an n-type dopant. Further, the quantum dots may have a core-shell structure. In the core-shell structure, any appropriate functional layer (single layer or plural layers) may be formed around the shell depending on the purpose, and the shell surface may be subjected to surface treatment and / or chemical modification. .
  • the average particle size of the quantum dots can be arbitrarily selected according to the desired emission wavelength, and is preferably 1 to 30 nm. When the average particle diameter of the quantum dots is 1 to 10 nm, the peak in the emission spectrum can be sharpened in each of blue, green, and red.
  • the average particle diameter of the quantum dots is preferably 2 nm or more, and more preferably 8 nm or less. For example, when the average particle diameter of the quantum dot is about 2 nm, blue light is emitted, when it is about 3 nm, green light is emitted, and when it is about 6 nm, red light is emitted.
  • the average particle size of the quantum dots can be measured by a dynamic light scattering method.
  • Examples of a device for measuring the average particle size include a dynamic light scattering photometer DLS-8000 (manufactured by Otsuka Electronics Co., Ltd.).
  • organic phosphor one that emits each color such as green or red by blue excitation light is preferable.
  • Pyromethene derivative having a basic skeleton represented by the following structural formula (8) as a phosphor emitting red fluorescence and pyromethene having a basic skeleton represented by the following structural formula (9) as a phosphor emitting green fluorescence Derivatives and the like.
  • Other examples include perylene derivatives, porphyrin derivatives, oxazine derivatives, and pyrazine derivatives that emit red or green fluorescence depending on the selection of the substituent. Two or more of these may be contained. Of these, pyromethene derivatives are preferred because of their high quantum yield.
  • the pyrromethene derivative can be obtained, for example, by the method described in JP-A-2011-241160.
  • the organic phosphor is soluble in the solvent, the pixel (B) having a desired thickness can be easily formed.
  • the thickness of the pixel (B) is preferably 0.5 ⁇ m or more, more preferably 1 ⁇ m or more, from the viewpoint of improving color characteristics. On the other hand, the thickness of the pixel (B) is preferably equal to or less than 30 ⁇ m, and more preferably equal to or less than 20 ⁇ m, from the viewpoint of reducing the thickness of the display device and the workability of the curved surface.
  • each pixel (B) is generally about 20 to 200 ⁇ m.
  • the pixels (B) are arranged so as to be separated by the partition (A-1).
  • the partition (A-1) By providing a partition wall between pixels, diffusion and color mixing of emitted light can be further suppressed.
  • Examples of the method for forming the pixel (B) include a method of filling a space separated by the partition wall (A-1) with a coating liquid containing a color conversion luminescent material (hereinafter, a color conversion luminescent material coating liquid).
  • a color conversion luminescent material coating liquid may further contain a resin or a solvent.
  • an ink jet coating method is preferable from the viewpoint of easily applying different types of color conversion light emitting materials to each pixel.
  • the obtained coating film may be dried under reduced pressure and / or dried by heating.
  • the drying temperature under reduced pressure is preferably 80 ° C. or lower in order to prevent the drying solvent from re-condensing on the inner wall of the reduced pressure chamber.
  • the pressure for drying under reduced pressure is preferably equal to or lower than the vapor pressure of the solvent contained in the coating film, and more preferably 1 to 1000 Pa.
  • the drying time under reduced pressure is preferably from 10 to 600 seconds.
  • examples of the heating and drying device include an oven and a hot plate.
  • the heating and drying temperature is preferably from 60 to 200 ° C.
  • the heating and drying time is preferably from 1 to 60 minutes.
  • the substrate with a partition wall of the present invention further comprises (C) a low refractive index layer having a refractive index of 1.20 to 1.35 at a wavelength of 550 nm (hereinafter referred to as a “low refractive index layer (C)”). "May be described as”).
  • a low refractive index layer C
  • the light extraction efficiency can be further improved, and the luminance of the display device can be further improved.
  • FIG. 3 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a low refractive index layer.
  • a patterned partition wall 2 and pixels 3 are provided, and a low refractive index layer 4 is further provided thereon.
  • the refractive index of the low-refractive-index layer (C) is preferably 1.20 or more, from the viewpoint of appropriately suppressing the reflection of light from the backlight and efficiently entering light into the pixel (B). 23 or more is more preferable.
  • the refractive index of the low refractive index layer (C) is preferably equal to or less than 1.35, and more preferably equal to or less than 1.30.
  • the refractive index of the low refractive index layer (C) is measured by irradiating the cured film surface with light having a wavelength of 550 nm from the vertical direction under atmospheric pressure and 20 ° C. using a prism coupler. Can be.
  • the low refractive index layer (C) preferably contains polysiloxane and silica particles having no hollow structure.
  • Polysiloxane has high compatibility with inorganic particles such as silica particles and functions as a binder capable of forming a transparent layer. Further, by containing silica particles, it is possible to efficiently form minute voids in the low refractive index layer (C) to reduce the refractive index, and to easily adjust the refractive index to the above-mentioned range. Can be.
  • the use of silica particles having no hollow structure does not have a hollow structure that easily causes cracks during curing shrinkage, so that cracks can be suppressed.
  • the polysiloxane and the silica particles having no hollow structure may be independently contained, or the polysiloxane and the silica particles having no hollow structure may be combined. May be contained. From the viewpoint of uniformity of the low refractive index layer (C), it is preferable that the polysiloxane and the silica particles having no hollow structure are contained in a bonded state.
  • the polysiloxane contained in the low refractive index layer (C) preferably contains fluorine.
  • fluorine By containing fluorine, the refractive index of the low refractive index layer (C) can be easily adjusted to 1.20 to 1.35.
  • the fluorine-containing polysiloxane can be obtained by hydrolyzing and polycondensing a plurality of alkoxysilane compounds including at least a fluorine-containing alkoxysilane compound represented by the following general formula (10). Further, other alkoxysilane compounds may be used.
  • R 7 represents a fluoroalkyl group having 3 to 17 fluorine atoms.
  • R 6 represents the same group as R 6 in formulas (5) to (7).
  • m represents 1 or 2.
  • 4-m R 6 and m R 7 may be the same or different, respectively.
  • fluorine-containing alkoxysilane compound represented by the general formula (10) for example, trifluoroethyltrimethoxysilane, trifluoroethyltriethoxysilane, trifluoroethyltriisopropoxysilane, trifluoropropyltrimethoxysilane, trifluoro Propyltriethoxysilane, trifluoropropyltriisopropoxysilane, heptadecafluorodecyltrimethoxysilane, heptadecafluorodecyltriethoxysilane, heptadecafluorodecyltriisopropoxysilane, tridecafluorooctyltriethoxysilane, tridecafluorooctyl Trimethoxysilane, tridecafluorooctyltriisopropoxysilane, trifluoroethylmethyldimethoxys
  • the content of polysiloxane in the low refractive index layer (C) is preferably 4% by weight or more from the viewpoint of suppressing cracks.
  • the content of the polysiloxane is 32% by weight or less from the viewpoint of securing the thixotropy due to the network between the silica particles, appropriately maintaining the air layer in the low refractive index layer (C), and further reducing the refractive index. Is preferred.
  • silica particles having no hollow structure in the low refractive index layer (C) include, for example, "Snowtex” (registered trademark) manufactured by Nissan Chemical Industries, Ltd. and "Organosilica Sol” (registered trademark) series (isopropyl alcohol dispersion , Ethylene glycol dispersion, methyl ethyl ketone dispersion, dimethylacetamide dispersion, methyl isobutyl ketone dispersion, propylene glycol monomethyl acetate dispersion, propylene glycol monomethyl ether dispersion, methanol dispersion, ethyl acetate dispersion, butyl acetate dispersion, xylene -N-butanol dispersion, toluene dispersion, etc.
  • Examples include PGM-ST, PMA-ST, IPA-ST, IPA-ST-L, IPA-ST-ZL, IPA-ST-UP, etc. Two or more of these may be contained.
  • the content of the silica particles having no hollow structure in the low-refractive-index layer (C) ensures thixotropic properties due to the network between the silica particles, keeps the air layer in the low-refractive-index layer (C) appropriately, and refracts. From the viewpoint of further reducing the rate, 68% by weight or more is preferable. On the other hand, the content of the silica particles having no hollow structure is preferably 96% by weight or less from the viewpoint of suppressing cracks.
  • the thickness of the low refractive index layer (C) is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, from the viewpoint of covering the steps of the pixel (B) and suppressing the occurrence of defects.
  • the thickness of the low refractive index layer (C) is preferably 20 ⁇ m or less, and more preferably 10 ⁇ m or less, from the viewpoint of reducing the stress that causes cracks in the low refractive index layer (C).
  • a coating method is preferable because the forming method is easy.
  • a low-refractive-index layer (C) can be formed by applying a low-refractive-index resin composition containing polysiloxane and silica particles on the pixel (B), drying the resultant, and then heating.
  • the substrate with a partition wall of the present invention preferably further has an inorganic protective layer I having a thickness of 50 to 1,000 nm on the low refractive index layer (C).
  • the presence of the inorganic protective layer I makes it difficult for moisture in the air to reach the low refractive index layer (C). Therefore, it is possible to suppress the fluctuation of the refractive index of the low refractive index layer (C) and the deterioration of luminance. it can.
  • FIG. 4 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a low refractive index layer and an inorganic protective layer I.
  • a pattern-formed partition 2 and pixels 3 are provided on a base substrate 1, and a low refractive index layer 4 and an inorganic protective layer I5 are further provided thereon.
  • the substrate with a partition wall of the present invention preferably further has an inorganic protective layer II having a thickness of 50 to 1,000 nm between the pixel (B) and the low refractive index layer (C).
  • the presence of the inorganic protective layer II makes it difficult for the raw material forming the pixel (B) to move from the pixel (B) to the low-refractive-index layer, thereby suppressing a change in the refractive index of the low-refractive-index layer (C). In addition, luminance degradation can be suppressed.
  • FIG. 5 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a low refractive index layer and an inorganic protective layer II.
  • a pattern-formed partition wall 2 and pixels 3 are provided on a base substrate 1, and an inorganic protective layer II6 and a low refractive index layer 4 are further provided thereon.
  • the substrate with a partition wall of the present invention preferably further has a color filter having a thickness of 1 to 5 ⁇ m (hereinafter sometimes referred to as “color filter”) between the base substrate and the pixel (B). .
  • the color filter has a function of transmitting visible light in a specific wavelength range and setting the transmitted light to a desired hue. With the color filter, the color purity of the display device can be improved. By setting the thickness of the color filter to 1 ⁇ m or more, the color purity can be further improved. On the other hand, by setting the thickness of the color filter to 5 ⁇ m or less, the luminance can be further improved.
  • FIG. 6 is a cross-sectional view of one embodiment of a substrate with a partition wall of the present invention having a color filter.
  • a pattern-formed partition 2 and a color filter 7 are provided, and on the color filter 7, pixels 3 are provided.
  • the color filter examples include a color filter using a pigment-dispersed material in which a pigment is dispersed in a photoresist, which is used for a flat panel display such as a liquid crystal display. More specifically, a blue color filter that selectively transmits a wavelength of 400 nm to 550 nm, a green color filter that selectively transmits a wavelength of 500 nm to 600 nm, a yellow color filter that selectively transmits a wavelength of 500 nm or more, And a red color filter that selectively transmits a wavelength of 600 nm or more.
  • the color filter may be laminated separately from the pixel (B) containing the color conversion luminescent material, or may be laminated integrally.
  • the substrate with a partition wall of the present invention preferably further has an inorganic protective layer III and / or a yellow organic protective layer having a thickness of 50 to 1,000 nm between the color filter and the pixel (B).
  • an inorganic protective layer III By having the inorganic protective layer III, the raw material for forming the color filter hardly reaches the pixel (B) containing the color conversion luminescent material from the color filter. Luminance degradation can be suppressed. Further, by having the yellow organic protective layer, blue leakage light that cannot be completely converted by the pixel (B) containing the color conversion luminescent material can be cut, and color reproducibility can be improved.
  • FIG. 7 is a cross-sectional view of one embodiment of the substrate with a partition wall of the present invention having a color filter and an inorganic protective layer III and / or a yellow organic protective layer.
  • a patterned partition wall 2 and a color filter 7 are provided, on which an inorganic protective layer III and / or a yellow organic protective layer 8 is provided. It has pixels 3 arranged and separated by a partition wall 2 covered with a protective layer 8.
  • the substrate with a partition wall of the present invention preferably further has an inorganic protective layer IV and / or a yellow organic protective layer having a thickness of 50 to 1,000 nm on the base substrate.
  • the inorganic protective layer IV and / or the yellow organic protective layer act as a refractive index adjusting layer, and can extract light emitted from the pixel (B) more efficiently, thereby further improving the luminance of the display device.
  • the yellow organic protective layer can cut off blue leak light that cannot be converted by the pixel (B) containing the color conversion luminescent material, and can improve color reproducibility.
  • the inorganic protective layer IV and / or the yellow organic protective layer are provided between the base substrate and the partition (A) and the pixel (B).
  • FIG. 8 is a cross-sectional view of one embodiment of the substrate with a partition wall of the present invention having an inorganic protective layer IV and / or a yellow organic protective layer.
  • an inorganic protective layer IV and / or a yellow organic protective layer 9 are provided, on which a patterned partition 2 and a color filter 7 are provided, on which a patterned barrier is provided. 2 and a pixel 3.
  • Examples of the material constituting the inorganic protective layers I to IV include metal oxides such as silicon oxide, indium tin oxide, and gallium zinc oxide; metal nitrides such as silicon nitride; and fluorides such as magnesium fluoride. . Two or more of these may be contained. Among these, silicon nitride or silicon oxide is more preferable because of low water vapor permeability and high permeability.
  • the thickness of the inorganic protective layers I to IV is preferably 50 nm or more, more preferably 100 nm or more, from the viewpoint of sufficiently suppressing the permeation of a substance such as water vapor. On the other hand, from the viewpoint of suppressing a decrease in transmittance, the thickness of the inorganic protective layers I to IV is preferably 800 nm or less, more preferably 500 nm or less.
  • each of the inorganic protective layers I to IV is determined by exposing a cross section perpendicular to the underlying substrate using a polishing device such as a cross section polisher and observing the cross section using a scanning electron microscope or a transmission electron microscope. Can be measured.
  • Examples of the method for forming the inorganic protective layers I to IV include a sputtering method.
  • the inorganic protective layer is preferably colorless and transparent or yellow and transparent.
  • the yellow organic protective layer is obtained, for example, by patterning the resin composition of the present invention containing an organic metal compound containing silver as the organic metal compound.
  • the organometallic compound containing silver has a function of decomposing and aggregating in a heating step to form yellow particles during pattern formation, thereby yellowing the protective layer.
  • the organometallic compound containing silver include silver neodecanoate, silver octylate, and silver salicylate. Among these, silver neodecanoate is preferred from the viewpoint of yellowing.
  • the content of the organometallic compound containing silver is preferably 0.2 to 5% by weight based on the solid content.
  • the content of the organometallic compound containing silver 0.2% by weight or more, yellowing can be further achieved.
  • the content of the organometallic compound containing silver is more preferably 1.5% by weight or more based on the solid content.
  • the transmittance can be further improved.
  • the resin composition forming the yellow organic protective layer may contain a yellow pigment.
  • a yellow pigment for example, Pigment Yellow (hereinafter abbreviated as PY) PY12, PY13, PY17, PY20, PY24, PY83, PY86, PY93, PY95, PY109, PY110, PY117, PY125, PY129, PY137, PY138, PY139, PY147 , PY148, PY150, PY153, PY154, PY166, PY168, PY185, and the like.
  • a yellow pigment selected from PY139, PY147, PY148 and PY150 is preferable from the viewpoint of selectively blocking blue light.
  • a method of forming a pattern of the yellow organic protective layer a method of forming a pattern by a photosensitive paste method as in the case of the above-described partition wall (A-1) is preferable.
  • the yellow organic protective layer 8 may have a role as an overcoat layer for flattening each pixel of the color filter.
  • the thickness of the yellow organic protective layer is preferably 100 nm or more, more preferably 500 nm or more, from the viewpoint of sufficiently shielding blue leakage light. On the other hand, from the viewpoint of suppressing a decrease in light extraction efficiency, the thickness of the yellow organic protective layer is preferably equal to or less than 3000 nm, and more preferably equal to or less than 2000 nm.
  • the display device of the present invention includes the substrate with a partition and a light source.
  • a light source selected from a liquid crystal cell, an organic EL cell, a mini LED cell, and a micro LED cell is preferable.
  • An organic EL cell is more preferable as the light source because of its excellent light emitting characteristics.
  • the mini LED cell refers to a cell in which a number of LEDs having a length and width of about 100 ⁇ m to 10 mm are arranged.
  • the micro LED cell refers to a cell in which a number of LEDs having a length and width less than 100 ⁇ m are arranged.
  • the method for manufacturing the display device of the present invention will be described with reference to an example of a display device having the substrate with a partition wall and the organic EL cell of the present invention.
  • a photosensitive polyimide resin is applied over a glass substrate, and an insulating film having an opening is formed by photolithography. After aluminum is sputtered thereon, aluminum is patterned by a photolithography method, and a back electrode layer made of aluminum is formed in an opening having no insulating film.
  • Alq3 tris (8-quinolinolato) aluminum
  • Alq3 tris (8-quinolinolato) aluminum
  • dicyanomethylenepyran, quinacridone and 4,4 ′ A white light emitting layer doped with -bis (2,2-diphenylvinyl) biphenyl is formed.
  • N, N'-diphenyl-N, N'-bis ( ⁇ -naphthyl) -1,1'-biphenyl-4,4'-diamine is formed as a hole transport layer by a vacuum evaporation method.
  • ITO is formed as a transparent electrode by sputtering to produce an organic EL cell having a white light emitting layer.
  • a display device can be manufactured by bonding the above-mentioned substrate with a partition wall and the organic EL cell obtained in this manner with a sealing agent.
  • the solid concentration of the polysiloxane solution in Synthesis Examples 1 to 4 was determined by the following method. 1.5 g of the polysiloxane solution was weighed into an aluminum cup and heated at 250 ° C. for 30 minutes using a hot plate to evaporate the liquid. The weight of the solid content remaining in the aluminum cup after heating was weighed, and the solid content concentration of the polysiloxane solution was determined from the ratio to the weight before heating.
  • the content ratio of each repeating unit in the polysiloxane in Synthesis Examples 1 to 4 was determined by the following method.
  • the polysiloxane solution was injected into an NMR sample tube made of “Teflon” (registered trademark) having a diameter of 10 mm, 29 Si-NMR measurement was performed, and the Si derived from the specific organosilane was compared with the integrated value of the total Si derived from the organosilane.
  • the content ratio of each repeating unit was calculated from the ratio of the integral value of.
  • the 29 Si-NMR measurement conditions are shown below.
  • Apparatus Nuclear magnetic resonance apparatus (JNM-GX270; manufactured by JEOL Ltd.) Measurement method: gated decoupling method measurement nuclear frequency: 53.6693MHz (29 Si nucleus) Spectral width: 20000Hz Pulse width: 12 ⁇ s (45 ° pulse) Pulse repetition time: 30.0 seconds Solvent: acetone-d6 Reference substance: tetramethylsilane Measurement temperature: 23 ° C Sample rotation speed: 0.0 Hz.
  • Synthesis Example 1 Polysiloxane (PSL-1) Solution In a 1000 ml three-necked flask, 147.32 g (0.675 mol) of trifluoropropyltrimethoxysilane and 40.66 g (0.175 mol) of 3-methacryloxypropylmethyldimethoxysilane.
  • the weight average molecular weight of the obtained polysiloxane (PSL-1) was 4,000. Also, trifluoropropyltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride, and 3- (3,4-epoxycyclohexyl) propyl in polysiloxane (PSL-1)
  • the molar ratio of each repeating unit derived from trimethoxysilane was 67.5 mol%, 17.5 mol%, 10 mol%, and 5 mol%, respectively.
  • Synthesis Example 2 Polysiloxane (PSL-2) Solution In a 1000 ml three-necked flask, 116.07 g (0.475 mol) of diphenyldimethoxysilane, dimethyldimethoxysilane (0.20 mol), and 43.3-methacryloxypropyltrimethoxysilane.
  • the weight average molecular weight of the obtained polysiloxane (PSL-3) was 4,100. Also, trifluoropropyltrimethoxysilane, 3-methacryloxypropyltrimethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride, and 3- (3,4-epoxycyclohexyl) propyltrisiloxane in polysiloxane (PSL-3) The molar ratio of each repeating unit derived from methoxysilane was 67.5 mol%, 17.5 mol%, 10 mol% and 5 mol%, respectively.
  • Synthesis Example 4 Polysiloxane (PSL-4) Solution In a 1000 ml three-necked flask, 34.05 g (0.250 mol) of methyltrimethoxysilane, 99.15 g (0.500 mol) of phenyltrimethoxysilane, and 31 of tetraethoxysilane were added. .25 g (0.150 mol), 24.64 g (0.100 mol) of 3- (3,4-epoxycyclohexyl) propyltrimethoxysilane, and 174.95 g of PGMEA were charged and stirred at room temperature in 56.70 g of water.
  • a phosphoric acid aqueous solution in which 0.945 g of phosphoric acid (0.50% by weight based on the charged monomer) was dissolved was added over 30 minutes. Thereafter, a polysiloxane solution was obtained in the same manner as in Synthesis Example 1. During the reaction, a total of 129.15 g of by-products methanol and water were distilled off. PGMEA was added to the obtained polysiloxane solution so that the solid content concentration became 40% by weight, to obtain a polysiloxane (PSL-4) solution. The weight average molecular weight of the obtained polysiloxane (PSL-4) was 4,200.
  • the molar ratio of each repeating unit derived from methyltrimethoxysilane, phenyltrimethoxysilane, tetraethoxysilane, and 3- (3,4-epoxycyclohexyl) propyltrimethoxysilane is as follows: , 25 mol%, 50 mol%, 15 mol% and 10 mol%, respectively.
  • the obtained reaction product was purified by silica gel column chromatography to obtain a white solid of 3,5-bis (4-t-butylphenyl) benzaldehyde (3.5 g).
  • 3,5-bis (4-t-butylphenyl) benzaldehyde (1.5 g) and 2,4-dimethylpyrrole (0.7 g) were placed in a flask, and dehydrated dichloromethane (200 mL) and trifluoroacetic acid (1 ) And stirred under a nitrogen atmosphere for 4 hours.
  • the obtained reaction product was purified by silica gel column chromatography to obtain 0.4 g of a green powder (yield 17%).
  • the result of 1 H-NMR analysis of the obtained green powder is as follows, and it was confirmed that the green powder obtained above was [G-1] represented by the following structural formula.
  • 1 H-NMR (CDCl 3 (d ppm)): 7.95 (s, 1H), 7.63 to 7.48 (m, 10H), 6.00 (s, 2H), 2.58 (s , 6H), 1.50 (s, 6H), 1.37 (s, 18H).
  • the organic layer was washed twice with 20 ml of water, then evaporated and dried under vacuum to obtain a pyrromethene derivative as a residue.
  • 305 mg of diisopropylethylamine and 670 mg of boron trifluoride diethyl ether complex were added to a mixed solution of the obtained pyromethene compound and 10 ml of toluene under a nitrogen stream, and the mixture was stirred at room temperature for 3 hours.
  • 20 ml of water was poured into the reaction mixture, and extracted with 30 ml of dichloromethane.
  • the organic layer was washed twice with 20 ml of water, dried over magnesium sulfate, and evaporated.
  • Synthesis Example 7 Silica Particle-Containing Polysiloxane Solution (LS-1) In a 500 ml three-necked flask, 0.05 g (0.4 mmol) of methyltrimethoxysilane, 0.66 g (3.0 mmol) of trifluoropropyltrimethoxysilane, and 0.10 g (0,0 g) of trimethoxysilylpropylsuccinic anhydride were added.
  • the solid concentration of the obtained silica particle-containing polysiloxane solution (LS-1) was 24.3% by weight, and the contents of the polysiloxane and the silica particles in the solid content were 15% by weight and 85% by weight, respectively.
  • Methyltrimethoxysilane, trifluoropropyltrimethoxysilane, 3-trimethoxysilylpropylsuccinic anhydride, and ⁇ -acryloxypropyltrimethoxysilane of the polysiloxane in the obtained silica particle-containing polysiloxane (LS-1) was 1.0 mol%, 8.0 mol%, 1.0 mol% and 90.0 mol%, respectively.
  • Example 1 Resin composition for partition wall (P-1) As a white pigment, 5.00 g of a titanium dioxide pigment (R-960; manufactured by BASF Japan Ltd. (hereinafter, “R-960”)), and as a resin, a solution of the polysiloxane (PSL-1) obtained in Synthesis Example 1 5.00 g were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW-1).
  • R-960 titanium dioxide pigment
  • PSL-1 polysiloxane
  • IC-819 1,2-diisopropyl-3- [bis (dimethylamino) methyl 2- (3-benzoylphenyl) propionate as photobase generator 0.100 g of guanidinium (WPBG-266 (trade name), manufactured by Fujifilm Wako Pure Chemical Industries, Ltd. (hereinafter, "WPBG-266”)), and dipentaerythritol hexaacrylate (“KAYARAD” (registered) as a photopolymerizable compound. Trade name) DPHA, 1.20 g, manufactured by Shin Nippon Pharmaceutical Co., Ltd.
  • DPHA photopolymerizable fluorine-containing compound
  • RS-76-E photopolymerizable fluorine-containing compound
  • CELLOXIDE registered trademark
  • Carbon dioxide (registered trademark) 2021P”)
  • ethylene bis (Oxyethylene) bis [3- (5-tert-butyl-4-hydroxy-m-tolyl) propionate] (“Irganox” (registered trademark) 1010, manufactured by BASF Japan Ltd.
  • IRGANOX registered trademark 1010
  • BYK (registered trademark) 352, manufactured by BYK Japan KK (hereinafter,” BYK-352 ")
  • BYK acrylic surfactant
  • PGMEA PGMEA
  • Example 4 Resin composition for partition walls (P-4)
  • Example 10 Except that a 40% by weight PGMEA diluted solution of "MegaFac” (registered trademark) F477 (manufactured by Dainippon Ink and Chemicals, Inc.) was used instead of the 40% by weight PGMEA diluted solution of RS-76-E. In the same manner as in Example 1, a resin composition for partition walls (P-4) was obtained.
  • PGMEA diluted solution of "MegaFac” (registered trademark) F477 manufactured by Dainippon Ink and Chemicals, Inc.
  • Example 5 Resin composition for partition wall (P-5) A mixture of 5.00 g of R-960 as a white pigment and 5.00 g of a polysiloxane (PSL-4) solution as a resin was dispersed using a mill-type disperser filled with zirconia beads, and dispersed in a pigment dispersion (MW). -4) was obtained. 9.98 g of the pigment dispersion (MW-4), 1.86 g of the organometallic compound solution (OM-1), 1.16 g of the polysiloxane (PSL-4) solution, and WPBG- as a photobase generator.
  • Example 6 Resin composition for partition wall (P-6) An organometallic compound solution (OM-2) was prepared in the same manner as the organometallic compound solution (OM-1) except that silver neodecanoate was used instead of bis (acetylacetonato) palladium as the organometallic compound. did. A resin composition for partition walls (P-6) was obtained in the same manner as in Example 1, except that the organometallic compound solution (OM-2) was used instead of the organometallic compound solution (OM-1).
  • Example 7 Resin composition for partition wall (P-7) An organometallic compound solution (OM-3) was prepared in the same manner as the organometallic compound solution (OM-1) except that chlorotriphenylphosphine gold was used instead of bis (acetylacetonato) palladium as the organometallic compound. Was prepared. A resin composition for partition walls (P-7) was obtained in the same manner as in Example 1, except that the organometallic compound solution (OM-3) was used instead of the organometallic compound solution (OM-1).
  • Example 8 Resin composition for partition wall (P-8) An organometallic compound solution (OM-) was prepared in the same manner as the organometallic compound solution (OM-1) except that bis (acetylacetonato) platinum was used instead of bis (acetylacetonato) palladium as the organometallic compound. 4) was prepared. A resin composition for partition walls (P-8) was obtained in the same manner as in Example 1, except that the organometallic compound solution (OM-4) was used instead of the organometallic compound solution (OM-1).
  • Example 9 Resin composition for partition wall (P-9) Except that the amount of the organometallic compound solution (OM-1) was changed to 0.929 g, the amount of the polysiloxane (PSL-1) solution was changed to 1.41 g, and 4.20 g of PGMEA was changed to 4.70 g of PGMEA as a solvent. In the same manner as in Example 1, a resin composition for partition walls (P-9) was obtained.
  • Example 10 Resin composition for partition wall (P-10) Except that the addition amount of the organometallic compound solution (OM-1) was changed to 0.400 g, the addition amount of the polysiloxane (PSL-1) solution was changed to 1.940 g, and 4.20 g of PGMEA was changed to 6.27 g of PGMEA as a solvent. In the same manner as in Example 1, a resin composition for partition walls (P-10) was obtained.
  • Example 11 Partition Resin Composition (P-11) Except that the addition amount of the organometallic compound solution (OM-1) was changed to 4.595 g, the addition amount of the polysiloxane (PSL-1) solution was changed to 0.010 g, and 4.20 g of PGMEA was changed to 2.92 g of PGMEA as a solvent. In the same manner as in Example 1, a resin composition for partition walls (P-11) was obtained.
  • Example 12 Resin Composition for Partition Wall (P-12) A mill type dispersing machine filled with zirconia beads was prepared by mixing 5.00 g of R-960 as a white pigment, 5.00 g of a polysiloxane (PSL-1) solution as a resin, and 0.01 g of titanium nitride as a black pigment. To obtain a pigment dispersion (MW-2). Instead of the pigment dispersion (MW-1), 9.99 g of the pigment dispersion (MW-2) was added, the amount of the polysiloxane (PSL-1) solution was changed to 1.38 g, and PGMEA4. Except for using 72 g, a resin composition for partition walls (P-12) was obtained in the same manner as in Example 9.
  • Example 13 Resin composition for partition wall (P-13)
  • a resin 10.0 g of a polysiloxane (PSL-1) solution and 0.15 g of titanium nitride as a black pigment were mixed, and dispersed using a mill-type disperser filled with zirconia beads. 3) was obtained.
  • the pigment dispersion (MW-1) 9.99 g of the pigment dispersion (MW-3) was added, the amount of the polysiloxane (PSL-1) solution was changed to 15.16 g, and the amount of the PGMEA added. was changed from 4.20 g to 0.11 g to obtain a resin composition for partition walls (P-13) in the same manner as in Example 1.
  • Example 14 Resin Composition for Partition Wall (P-14) Instead of the organometallic compound solution (OM-1), 1.85 g of a 10% DAA solution of bis (acetylacetonato) palladium was used as the organometallic compound, and the addition amount of the polysiloxane (PSL-1) solution was 1
  • the resin composition for a partition wall (P-14) was obtained in the same manner as in Example 1 except that PGMEA was changed to 3.85 g and PGMEA was changed to 3.85 g from PGMEA as a solvent.
  • Example 15 Resin composition for partition wall (P-15) Example 1 was repeated except that the photobase generator WPBG-266 was not added, the addition amount of the polysiloxane (PSL-1) solution was changed to 1.21 g, and 4.20 g of PGMEA was changed to 4.07 g of PGMEA as a solvent. Similarly, a partition wall resin composition (P-15) was obtained.
  • Example 16 Resin Composition for Partition Wall (P-16)
  • the addition amount of the polysiloxane (PSL-1) solution was changed to 2.01 g without adding the 40% by weight PGMEA diluted solution of the liquid repellent compound RS-76-E, and 4.20 g of PGMEA was changed to 4.17 g of PGMEA as a solvent.
  • a resin composition for partition walls (P-16) was obtained in the same manner as in Example 1 except that the above procedure was repeated.
  • Comparative Example 2 Resin composition for partition wall (P-18) Mill type dispersing machine filled with zirconia beads by mixing 5.00 g of R-960 as a white pigment, 5.00 g of a polysiloxane (PSL-1) solution as a resin, and 0.10 g of titanium nitride as a black pigment To obtain a pigment dispersion (MW-4). Next, 10.02 g of the pigment dispersion (MW-4), 1.73 g of the polysiloxane (PSL-1) solution, 0.050 g of OXE-02 as a photopolymerization initiator, and 0.10 g of IC-819.
  • P-18 Mill type dispersing machine filled with zirconia beads by mixing 5.00 g of R-960 as a white pigment, 5.00 g of a polysiloxane (PSL-1) solution as a resin, and 0.10 g of titanium nitride as a black pigment
  • MW-4 pigment dispersion
  • Comparative Example 3 Resin composition for partition wall (P-19) A mill type dispersing machine filled with zirconia beads by mixing 5.00 g of R-960 as a white pigment, 5.00 g of a polysiloxane (PSL-1) solution as a resin, and 0.10 g of zirconium nitride as a black pigment. To obtain a pigment dispersion (MW-5). A resin composition for partition walls (P-19) was obtained in the same manner as in Comparative Example 2, except that the pigment dispersion (MW-5) was used instead of the pigment dispersion (MW-4).
  • Comparative Example 4 Resin Composition for Partition Wall (P-20) 5.00 g of R-960 as a white pigment, 5.00 g of a polysiloxane (PSL-1) solution as a resin, and 0 as a black pigment a mixed pigment of a red pigment PR254 and a blue pigment PB64 in a weight ratio of 60/40. .05 g were mixed and dispersed using a mill-type disperser filled with zirconia beads to obtain a pigment dispersion (MW-6).
  • a resin composition for partition walls (P-20) was obtained in the same manner as in Comparative Example 2, except that the pigment dispersion (MW-6) was used instead of the pigment dispersion (MW-4).
  • Tables 2 and 3 show the compositions of Examples 1 to 16 and Comparative Examples 1 to 6.
  • Color conversion luminescent material composition (CL-1) 20 parts by weight of a 0.5% by weight toluene solution of a green quantum dot material (Lumidot 640 CdSe / ZnS, average particle diameter: 6.3 nm, manufactured by Aldrich), 45 parts by weight of DPHA, "IRGACURE” (registered trademark) 907 (registered trademark) 5 parts by weight of BASF Japan Co., Ltd., 166 parts by weight of a 30% by weight PGMEA solution of acrylic resin (SPCR-18 (trade name), manufactured by Showa Denko KK) and 97 parts by weight of toluene were mixed and stirred. And dissolved uniformly.
  • a green quantum dot material Limidot 640 CdSe / ZnS, average particle diameter: 6.3 nm, manufactured by Aldrich
  • DPHA green quantum dot material
  • "IRGACURE" registered trademark
  • 907 registered trademark
  • BASF Japan Co., Ltd. 166 parts by weight
  • Pigment Yellow 150 75 g of a polymer dispersant ("BYK” (registered trademark) -6919 (trade name) manufactured by BYK Chemie (hereinafter, "BYK-6919”)), and a binder resin (“ADEKA ARKULS” (registered trademark)) ) 100 g of WR301 (trade name, manufactured by ADEKA Corporation) and 675 g of PGMEA were mixed to prepare a slurry.
  • BYK polymer dispersant
  • BYK-6919 trade name
  • ADEKA ARKULS binder resin
  • the beaker containing the slurry was connected to a Dyno mill and a tube, and a dispersion treatment was performed for 8 hours at a peripheral speed of 14 m / s using zirconia beads having a diameter of 0.5 mm as a medium to obtain Pigment Green 59 dispersion (GD-1).
  • GD-1 Pigment Green 59 dispersion
  • Pigment Green 59 dispersion (GD-1) 56.54 g, acrylic resin (“Cyclomer” (registered trademark) P (ACA) Z250 (trade name) manufactured by Daicel Ornex Co., Ltd. (hereinafter “P (ACA) Z250”) )), 2.64 g of DPHA, 0.330 g of a photopolymerization initiator (“Optomer” (registered trademark) NCI-831 (trade name), manufactured by ADEKA Corporation (hereinafter “NCI-831”)), 0.04 g of a surfactant (BYK "(registered trademark) -333 (trade name) manufactured by BYK-Chemie, Inc. (hereinafter,” BYK-333 ”)), 0.01 g of BHT as a polymerization inhibitor, and 37 g of PGMEA as a solvent. 30 g were mixed to prepare a color filter forming material (CF-1).
  • CF-1 color filter forming material
  • Preparation Example 5 150 g of carbon black (MA100 (trade name, manufactured by Mitsubishi Chemical Corporation)), 75 g of polymer dispersant BYK-6919, 100 g of P (ACA) Z250, and 675 g of PGMEA were prepared. To prepare a slurry. A beaker containing the slurry is connected with a Dyno mill and a tube, and a dispersion process is performed for 8 hours at a peripheral speed of 14 m / s using zirconia beads having a diameter of 0.5 mm as a medium to produce a pigment dispersion (MB-1). did.
  • MA100 trade name, manufactured by Mitsubishi Chemical Corporation
  • Preparation Example 6 Low refractive index layer forming material 5.350 g of the silica particle-containing polysiloxane solution (LS-1) obtained in Synthesis Example 6, 1.170 g of ethylene glycol mono-t-butyl ether, and 3.48 g of DAA After mixing, the mixture was filtered with a 0.45 ⁇ m syringe filter to prepare a low refractive index layer forming material.
  • Preparation Example 7 Yellow organic protective layer forming material (YL-1) C. I.
  • Pigment Yellow 150 75 g of a polymer dispersant ("BYK” (registered trademark) -6919 (trade name), manufactured by BYK Chemie (hereinafter, "BYK-6919”)), and a binder resin (“ADEKA ARKULS” (registered trademark)) ) 100 g of WR301 (trade name, manufactured by ADEKA Corporation) and 675 g of PGMEA were mixed to prepare a slurry.
  • BYK polymer dispersant
  • BYK-6919 trade name
  • ADEKA ARKULS binder resin
  • the beaker containing the slurry was connected with a Dyno mill and a tube, and a dispersion treatment was performed for 8 hours at a peripheral speed of 14 m / s using zirconia beads having a diameter of 0.5 mm as a medium to obtain Pigment Yellow 150 dispersion (YD-1).
  • a dispersion treatment was performed for 8 hours at a peripheral speed of 14 m / s using zirconia beads having a diameter of 0.5 mm as a medium to obtain Pigment Yellow 150 dispersion (YD-1).
  • Pigment Yellow 150 dispersion (YD-1) 3.09 g, polysiloxane (PSL-1) solution 23.54 g as a resin, DPHA 6.02 g as a photopolymerizable compound, and silver neodecanoate as an organometallic compound.
  • Examples 17 to 20, 22 to 28, 38 to 45, Comparative Examples 7 to 9 As a base substrate, a 10 cm square non-alkali glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used. The partition wall resin compositions shown in Tables 4 and 5 were spin-coated thereon, and dried at 90 ° C. for 2 minutes using a hot plate (trade name: SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.). Then, a dried film was prepared.
  • SCW-636 manufactured by Dainippon Screen Mfg. Co., Ltd.
  • a parallel light mask aligner (PLA-501F, manufactured by Canon Inc.), an ultra-high pressure mercury lamp as a light source and an exposure amount of 200 mJ / cm 2 (i-line) through a photomask, using a prepared dry film. Exposure. Thereafter, using an automatic developing device (“AD-2000 (trade name)” manufactured by Takizawa Sangyo Co., Ltd.), shower development was performed for 100 seconds using a 0.045% by weight aqueous solution of potassium hydroxide, and then 30 minutes using water. Rinse for seconds. Further, it was heated in an air (trade name: IHPS-222, manufactured by Espec Corporation) at a temperature of 230 ° C.
  • AD-2000 automatic developing device
  • IHPS-222 manufactured by Espec Corporation
  • partition walls formed in a lattice pattern with a pitch of 150 ⁇ m on the long side were formed.
  • the color-converting light-emitting material compositions shown in Tables 4 and 5 were applied to the regions separated by the partition walls of the obtained substrate with partition walls by an inkjet method under a nitrogen atmosphere, dried at 100 ° C. for 30 minutes, and dried. A 5.0 ⁇ m pixel was formed to obtain a substrate with a partition having the configuration shown in FIG.
  • Example 21 As a base substrate, a 10 cm square non-alkali glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used. The resin composition for partition walls shown in Table 4 was spin-coated thereon, and dried at 90 ° C. for 2 minutes using a hot plate (trade name: SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.). A film was prepared. Using a parallel light mask aligner (PLA-501F, manufactured by Canon Inc.), an ultra-high pressure mercury lamp as a light source and an exposure amount of 200 mJ / cm 2 (i-line) through a photomask, using a prepared dry film. Exposure.
  • PPA-501F parallel light mask aligner
  • AD-2000 (trade name)” manufactured by Takizawa Sangyo Co., Ltd.
  • shower development was performed with a 2.38% by weight aqueous solution of tetramethylammonium hydroxide for 90 seconds, and then rinsed with water for 30 seconds. did.
  • exposure was performed at an exposure dose of 500 mJ / cm 2 (i-line) without using a photomask, and bleaching was performed as described above. Further, it was heated in an air (trade name: IHPS-222, manufactured by Espec Corporation) at a temperature of 230 ° C.
  • partition walls formed in a lattice pattern with a pitch of 150 ⁇ m on the long side were formed.
  • the color-converting light-emitting material compositions shown in Tables 4 and 5 were applied to the regions separated by the partition walls of the obtained substrate with partition walls by an inkjet method under a nitrogen atmosphere, dried at 100 ° C. for 30 minutes, and dried. A 5.0 ⁇ m pixel was formed to obtain a substrate with a partition having the configuration shown in FIG.
  • Example 29 After forming pixels in the same manner as in Example 18, the substrate with the partition walls is spin-coated with a material for forming a low refractive index layer, and a hot plate (trade name: SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.) is used. Then, it was dried at a temperature of 90 ° C. for 2 minutes to produce a dried film. Further, by using an oven (trade name: IHPS-222, manufactured by Espec Corporation), the substrate was heated in air at a temperature of 90 ° C. for 30 minutes to form a low refractive index layer. Obtained.
  • a hot plate trade name: SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.
  • Example 30 An inorganic protective layer having a thickness of 50 to 1,000 nm was formed on the low-refractive-index layer of the substrate with a low-refractive-index layer obtained in Example 29 using a plasma CVD apparatus (PD-220NL, manufactured by Samco). A 300-nm-thick silicon nitride film corresponding to I was formed, and a substrate with a partition having the configuration shown in FIG. 4 was obtained.
  • a plasma CVD apparatus PD-220NL, manufactured by Samco.
  • Example 31 Using a plasma CVD apparatus (PD-220NL, manufactured by SAMCO) on a substrate with partition walls obtained in Example 18, silicon nitride having a thickness of 300 nm corresponding to the inorganic protective layer II having a thickness of 50 to 1,000 nm A film was formed on the pixel. Thereafter, a low-refractive-index layer having a thickness of 1.0 ⁇ m was formed on the inorganic protective layer II by the same method as in Example 29, using the low-index layer-forming material obtained in Preparation Example 6, and shown in FIG. A substrate with a partition having the above configuration was obtained.
  • PD-220NL manufactured by SAMCO
  • Example 32 The color obtained in Preparation Example 4 was obtained in the same manner as in Example 17 so that the film thickness after curing was 2.5 ⁇ m in the region separated by the partition walls of the substrate with partition walls before pixel formation.
  • a filter forming material (CF-1) was applied and vacuum dried. Exposure was performed at a light exposure of 40 mJ / cm 2 (i-line) through a photomask designed to be exposed to the region of the opening of the substrate with a partition. After developing with a 0.3% by weight aqueous solution of tetramethylammonium for 50 seconds, the film was cured by heating at 230 ° C.
  • the color conversion luminescent material composition (CL-2) obtained in Preparation Example 2 was applied on a color filter in a nitrogen atmosphere by an inkjet method using an inkjet method, and dried at 100 ° C. for 30 minutes. Pixels of 0 ⁇ m were formed, and a substrate with a partition having the configuration shown in FIG. 6 was obtained.
  • Example 33 A plasma CVD device (PD-220NL, manufactured by SAMCO CORPORATION) was formed on a color filter of a substrate with a partition wall before pixel formation, on which a color filter having a thickness of 2.5 ⁇ m and a width of 50 ⁇ m was formed in the same manner as in Example 32.
  • a color filter having a thickness of 2.5 ⁇ m and a width of 50 ⁇ m was formed in the same manner as in Example 32.
  • the color conversion luminescent material composition (CL-2) obtained in Preparation Example 2 was applied on the inorganic protective layer III under a nitrogen atmosphere by an inkjet method, dried at 100 ° C. for 30 minutes, and dried. Pixels of 5.0 ⁇ m were formed, and a substrate with a partition having the configuration shown in FIG. 7 was obtained.
  • Example 34 As a base substrate, a 10 cm square non-alkali glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used. A 300 nm-thick silicon nitride film corresponding to the 50-1,000 nm-thick inorganic protective layer IV was formed thereon using a plasma CVD device (PD-220NL, manufactured by Samco). A substrate with a partition having the configuration shown in FIG. 8 was obtained in the same manner as in Example 31, except that the above substrate was used instead of a 10 cm square alkali-free glass substrate.
  • a plasma CVD device PD-220NL, manufactured by Samco
  • Example 35 The yellow organic protection obtained in Preparation Example 7 was applied on a color filter of a substrate with a partition wall before pixel formation, on which a color filter having a thickness of 2.5 ⁇ m and a width of 50 ⁇ m was obtained in the same manner as in Example 32.
  • the layer forming material (YL-1) was applied and vacuum dried. Exposure was performed at a light exposure of 40 mJ / cm 2 (i-line) through a photomask designed to be exposed to the region of the opening of the substrate with a partition. After developing with a 0.3% by weight aqueous solution of tetramethylammonium for 50 seconds, it was cured by heating at 230 ° C.
  • the color conversion luminescent material composition (CL-2) obtained in Preparation Example 2 was applied on a yellow organic protective layer under a nitrogen atmosphere by an inkjet method, and dried at 100 ° C. for 30 minutes. Pixels of 5.0 ⁇ m were formed, and a substrate with a partition having the configuration shown in FIG. 7 was obtained.
  • Example 36 As a base substrate, a 10 cm square non-alkali glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used.
  • the yellow organic protective layer forming material (YL-1) obtained in Preparation Example 7 was applied thereon, and dried under vacuum. After exposing the dried film at a light exposure of 40 mJ / cm 2 (i-line) without using a photomask, the film is developed with a 0.3% by weight aqueous solution of tetramethylammonium for 50 seconds, and cured by heating at 230 ° C. for 30 minutes. As a result, a yellow organic protective layer having a thickness of 1.0 ⁇ m was formed.
  • a substrate with a partition having the configuration shown in FIG. 8 was obtained in the same manner as in Example 31, except that the above substrate was used instead of a 10 cm square alkali-free glass substrate.
  • Example 37 As a base substrate, a 10 cm square non-alkali glass substrate (manufactured by AGC Techno Glass Co., Ltd., thickness 0.7 mm) was used. The material for forming a light-shielding partition obtained in Preparation Example 5 was spin-coated thereon, and dried at 90 ° C. for 2 minutes using a hot plate (trade name: SCW-636, manufactured by Dainippon Screen Mfg. Co., Ltd.). Then, a dried film was prepared.
  • SCW-636 trade name: manufactured by Dainippon Screen Mfg. Co., Ltd.
  • a parallel light mask aligner (trade name: PLA-501F, manufactured by Canon Inc.), the produced dried film was exposed to light through a photomask using an ultra-high pressure mercury lamp as a light source and an exposure amount of 40 mJ / cm 2 (i-line). Exposure. Thereafter, development was performed for 50 seconds with a 0.3% by weight aqueous solution of tetramethylammonium using an automatic developing apparatus (“AD-2000 (trade name)” manufactured by Takizawa Sangyo Co., Ltd.), and then rinsed with water for 30 seconds. did. Further, it was heated in an air (trade name: IHPS-222, manufactured by Espec Corporation) at a temperature of 230 ° C.
  • AD-2000 automatic developing apparatus
  • Example 17 A substrate having a light-shielding partition wall in which partition walls having an OD value per unit area of 2.0 were formed in a grid pattern with a pitch of 30 ⁇ m on a short side and 150 ⁇ m on a long side was obtained. Thereafter, in the same manner as in Example 17, the partition having a height of 10 ⁇ m and a width of 20 ⁇ m was formed on the light-shielding partition in the same grid pattern as the light-shielding partition having a pitch of 30 ⁇ m on a short side and 150 ⁇ m on a long side.
  • the color-converting light-emitting material composition (CL-2) obtained in Preparation Example 22 was applied to a region separated by the partition of the obtained substrate with a partition under an atmosphere of nitrogen by an inkjet method, and then heated at 100 ° C. After drying for 30 minutes, a pixel having a thickness of 5.0 ⁇ m was formed, and a substrate with a partition having the configuration shown in FIG. 9 was obtained.
  • Tables 4 and 5 show the configurations of the examples and comparative examples.
  • Polysiloxane which is a raw material of the partition wall forming resin composition used in each of Examples and Comparative Examples, and the material for forming a low refractive index layer obtained in Preparation Example 26 were each applied to a silicon wafer by a spinner, and were heated on a hot plate ( It was dried at a temperature of 90 ° C. for 2 minutes using SCW-636 (trade name, manufactured by Dainippon Screen Mfg. Co., Ltd.). Then, it was heated in an air at 230 ° C. for 30 minutes using an oven (IHPS-222; manufactured by Espec Corporation) to form a cured film.
  • SCW-636 trade name, manufactured by Dainippon Screen Mfg. Co., Ltd.
  • the cured film was irradiated with light having a wavelength of 550 nm from the direction perpendicular to the surface of the cured film at 20 ° C. under atmospheric pressure to measure the refractive index. , Rounded to two decimal places.
  • the prepared dried film was used as an ultra-high pressure mercury lamp as a light source, and each width of 100 ⁇ m, 80 ⁇ m, 60 ⁇ m, 50 ⁇ m, 40 ⁇ m, 30 ⁇ m and 20 ⁇ m.
  • Exposure was performed with a gap of 100 ⁇ m at an exposure dose of 200 mJ / cm 2 (i-line) through a mask having a line & space pattern of Thereafter, using an automatic developing device (“AD-2000 (trade name)” manufactured by Takizawa Sangyo Co., Ltd.), shower development was performed for 100 seconds using a 0.045% by weight aqueous solution of potassium hydroxide, and then 30 minutes using water. Rinse for seconds.
  • AD-2000 automatic developing device
  • the partition wall forming resin compositions used in each of the examples and comparative examples were spin-coated so that the film thickness after heating became 5 ⁇ m, 10 ⁇ m, 15 ⁇ m and 20 ⁇ m, respectively.
  • processing was performed under the same conditions as in the respective Examples and Comparative Examples except that the whole was exposed without using a photomask at the time of exposure, and a solid film was formed on a glass substrate.
  • a glass substrate having a solid film was visually observed, and the presence or absence of cracks in the solid film was evaluated.
  • the crack resistant film thickness was determined to be “ ⁇ 15 ⁇ m”.
  • the crack-resistant film thickness in the case where there was no crack even at 20 ⁇ m was determined as “ ⁇ 20 ⁇ m”
  • the crack-resistant film thickness in the case where cracks occurred even at 5 ⁇ m was determined as “ ⁇ 5 ⁇ m”.
  • ⁇ OD value> As a model of the partition wall of the substrate with a partition wall obtained in each of the examples and comparative examples, a solid film was formed on a glass substrate in the same manner as in the evaluation of the reflectance. With respect to the obtained glass substrate having a solid film, the intensity of incident light and transmitted light was measured using an optical densitometer (361T (visual); manufactured by X-rite), and the OD value was calculated by the above-described equation (1). Calculated. For the OD value, the solid film before the heating step and the OD value after the heating step were measured, and the results are shown in Tables 6 and 7 including the difference.
  • Example 37 a solid film was similarly formed on a glass substrate as a model of the light-shielding partition wall (A-2). With respect to the obtained glass substrate having a solid film, the intensities of incident light and transmitted light were measured using an optical densitometer (361T (visual); manufactured by X-rite), and were calculated by the above-described equation (1).
  • an optical densitometer 361T (visual); manufactured by X-rite
  • ⁇ Taper angle> In each of the examples and comparative examples, an arbitrary cross section of the substrate with the partition wall before pixel formation was measured at an accelerating voltage of 3.0 kV using an optical microscope (FE-SEM (S-4800); manufactured by Hitachi, Ltd.). Observation was made and the taper angle was measured.
  • a solid film was formed on a glass substrate as a model of a partition in the substrate with a partition obtained in each of the examples and comparative examples, in the same manner as in the evaluation of the reflectance.
  • About the surface of the obtained solid film DM-700 manufactured by Kyowa Interface Science Co., Ltd., micro syringe: Teflon (registered trademark) for contact angle meter, manufactured by Kyowa Interface Science Co., Ltd.
  • propylene glycol monomethyl ether acetate was used instead of water, and the contact angle between the surface of the solid film and propylene glycol monomethyl ether acetate was measured.
  • the pixel portion surrounded by the grid-like partition walls is subjected to an ink jet coating apparatus (InkjetLabo, cluster technology (PGM)) using PGMEA as ink.
  • Ink-jet coating was performed using the following method. 160 pL of PGMEA was applied per one grid-like pattern, and the presence or absence of breakage (phenomenon in which ink crossed the partition walls and mixed into the adjacent pixel portion) was observed, and the ink jet coatability was evaluated based on the following criteria. The smaller the break, the higher the liquid repellency and the better the ink jet coating property.
  • ⁇ Thickness> The height of the structure before and after the formation of the pixel (B) was measured using a Surfcom stylus-type film thickness measuring device for the substrate with a partition wall obtained in each of the examples and comparative examples, and the difference was calculated. The thickness of the pixel (B) was measured. In Examples 29 to 31, the film thickness of the low refractive index layer (C) was further reduced, in Examples 32 to 36, the thickness of the color filter was further reduced, and in Example 37, the thickness (height) of the light shielding partition was further reduced. Were similarly measured.
  • Examples 30 to 31 and 33 to 34 a cross section perpendicular to the base substrate was exposed using a polishing device such as a cross section polisher, and the cross sections were enlarged with a scanning electron microscope or a transmission electron microscope. By observation, the thickness of each of the inorganic protective layers I to IV was measured.
  • ⁇ Brightness> Using a planar light emitting device equipped with a commercially available LED backlight (peak wavelength: 465 nm) as a light source, the substrates with partition walls obtained in each of the examples and comparative examples were installed such that the pixel portion was on the light source side. A current of 30 mA is passed through the surface light-emitting device to turn on the LED element, and a luminance (unit: cd / m 2 ) based on the CIE1931 standard is measured using a spectral radiance meter (CS-1000, manufactured by Konica Minolta). It measured and made it the initial luminance. However, the evaluation of the luminance was performed by a relative value with the initial luminance of Example 45 being 100 as a standard.
  • CS-1000 spectral radiance meter
  • CM-2600d manufactured by Konica Minolta, measurement diameter ⁇ 8 mm
  • light was irradiated from the base substrate side of the substrate with partition walls, and the spectrum including specular reflection light was measured.
  • the color gamut defined by 2020 is defined as red, green, and blue on the spectrum locus shown in the chromaticity diagram as three primary colors, and the wavelengths of red, green, and blue correspond to 630 nm, 532 nm, and 467 nm, respectively.
  • the emission color of the pixel was evaluated according to the following criteria.
  • ⁇ Display characteristics> The display characteristics of a display device manufactured by combining the substrate with a partition wall obtained in each of the examples and the comparative examples and the organic EL element were evaluated based on the following criteria.
  • a part of a pixel portion surrounded by a grid-like partition wall is provided with a color conversion luminescent material composition ( CL-2) was applied and dried at 100 ° C. for 30 minutes to form a pixel having a thickness of 5.0 ⁇ m.
  • CL-2 color conversion luminescent material composition
  • a region adjacent to the region where the color conversion light emitting material composition (CL-2) is applied is applied to the color conversion light emitting material composition (CL -3) was applied and dried at 100 ° C. for 30 minutes to form a pixel having a thickness of 5.0 ⁇ m.
  • a blue organic EL cell having the same width as that of the pixel portion surrounded by the lattice-shaped partition is manufactured, and the above-described substrate with a partition and the blue organic EL cell are bonded to each other with a sealing agent so as to face each other, as shown in FIG. A display device having the above configuration was obtained.
  • Base substrate 2 Partition wall 3: Pixel 3 (CL-2): Pixel 3 (CL-3) formed of color conversion luminescent material composition (CL-2): Color conversion luminescent material composition (CL-3) 4): low refractive index layer 5: inorganic protective layer I 6: inorganic protective layer II 7: Color filter 8: Inorganic protective layer III and / or yellow organic protective layer 9: Inorganic protective layer IV and / or yellow organic protective layer 10: Light-shielding partition 11: Blue organic EL cell H: Partition thickness L: Partition width ⁇ : taper angle

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